PRODUCTS

TO-220AC 2L

TYPE

SCS110AG

PAGE

1/3

1.TYPE SCS110AG

2.STRUCTURE SILICON CARBIDE EPITAXIAL PLANER SCHOTTKY BARRIER DIODE

3.APPLICATIONS GENERAL RECTIFICATION

4.ABSOLUTE MAXIMUM RATINGS [Tj =25oC unless otherwise specified]

REVERSE VOLTAGE VRM ・・・ 600V

(REPETITIVE PEAK)

REVERSE VOLTAGE (DC) VR ・・・ 600V

CONTINUOUS FORWARD IF ・・・ 10A

CURRENT (Tc=117 oC)

SURGE NO REPETITIVE IFSM ・・・ 40A

FORWARD CURRENT (PW = 8.3ms sinusoidal, Tj=25 oC)

160A

(PW = 10µs square, Tj=25 oC)

REPETITIVE PEAK IFRM ・・・ 39A

FORWARD CURRENT (Tc =95oC, TJ=125

oC, DUTY CYCLE = 10%)

TOTAL POWER DISSIPATION PD ・・・ 69W (Tc=25 oC)

JUNCTION TEMPERATURE Tj ・・・ 150oC

RANGE OF STORAGE Tstg ・・・ －55～150oC

TEMPERATURE

5.THERMAL RESISTANCE

JUNCTION TO CASE Rth(j-c) ・・・ 1.8 oC/W

DATE：22/APR./2010 SPECIFICATION No.Q03141-SCS110AG

DESIGN

CHECK

APPROVAL

REV.： 1

TSZ22111･04 002

PRODUCTS

TO-220AC 2L

TYPE

SCS110AG

PAGE

2/3

6.ELECTRICAL CHARACTERISTICS [Tj =25oC unless otherwise specified]

PARAMETER ITEM CONDITION MIN. TYP. MAX.

DC BLOCKING VOLTAGE VDC IR = 0.2mA 600V - -

FORWARD VOLTAGE VF IF = 10A, Tj=25

oC

IF = 10A, Tj=150 oC

-

-

1.5V

1.6V

1.7V

−

REVERSE CURRENT IR VR = 600V, Tj=25

oC

VR = 600V, Tj=150 oC

-

-

2uA

10uA

200uA

-

TOTAL CAPACITANCE C VR = 1V, f = 1MHz

VR = 600V, f = 1MHz

430pF

47pF

TOTAL CAPACITIVE

CHARGE QC - 16nC -

SWITCING TIME tC

VR = 400V

di/dt = 350A/us

- 15ns -

REV.： 1 SPECIFICATION No.Q03141-SCS110AG

TSZ22111･05 002

PRODUCTS

TO-220AC 2L

TYPE

SCS110AG

PAGE

3/3

7.INNER CIRCUIT

8.MARKING

REV.： 1 SPECIFICATION No.Q03141-SCS110AG

TSZ22111･05 002

SCS110AG

10 15

Anode

(3) (2)

Production year Production week

"10" and "15" means 15th week in 2010.

(2) Cathode

(3) Anode

(1)

(1) Cathode

Cathode

Cathode

Typical Performance 1/2

ＳＣＳ１１０ＡＧ Data Sheet

0.001

0.01

0.1

1

10

100

0 0.5 1 1.5 2 2.5

FORWARD VOLTAGE : VF (V)

FO

RW

AR

D C

UR

REN

T: IF

(A)

Ta= 125℃

Ta= 75℃

Ta=-25℃

Ta= 25℃

pulsed

Fig.1 VF-IF CHARACTERISTICS

0

2

4

6

8

10

12

14

0 0.5 1 1.5 2 2.5

FORWARD VOLTAGE : VF (V)

FO

RW

AR

D C

UR

REN

T: IF

(A)

Ta= 125℃

Ta= 75℃

Ta=-25℃

Ta= 25℃

pulsed

Fig.2 VF-IF CHARACTERISTICS

1

10

100

1,000

10,000

100,000

0 100 200 300 400 500 600

REVERSE VOLTAGE: VR (V)

REV

ER

SE C

UR

REN

T (nA

)

Ta= 125℃

Ta= 75℃

Ta=-25℃

Ta= 25℃

Fig.3 VR-IR CHARACTERISTICS

1

10

100

1,000

0.01 0.1 1 10 100 1000

REVERSE VOLTAGE : VR [V]

CA

PA

CIT

AN

CE B

ETW

EEN

TER

MIN

ALS : C

t[p

F]

Ta=25℃f=1MHz

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse width　　：　 Pw　（ s ）

Therm

al

Resi

stan

ce

:　（℃

/W

）

Ta=25℃Single Pulse

Fig.4 VR-Ct CHARACTERISTICS

Fig.5 Thermal Resistance vs. Pulse Width

0

10

20

30

40

50

60

70

80

0 30 60 90 120 150

CASE　TEMPERATURE　　：　 Tc (℃)

Pow

er

Dis

sipa

tion　

(W)

Fig.6 Power Dissipation

Typical Performance 2/2

ＳＣＳ１１０ＡＧ Data Sheet

0

10

20

30

40

50

60

0 30 60 90 120 150

CASE　TEMPERATURE　　：　 Tc (℃)

PEA

K　

FO

RW

AR

D　

CU

RR

EN

T　

(A)

D.C.

Duty=0.1

Duty=0.2

Duty=0.5

Duty=0.8

Fig.7 Derating Curve Ip-Tc

0

5

10

15

20

25

30

35

40

0 5 10 15

AVERAGE　RECTIFIED　FORWARD　CURRENT　:　Io(A)

PO

WER

　D

ISSIP

ATIO

N　

(W)

D.C.

Duty=0.8

Duty=0.5Duty=0.2

Duty=0.1

Fig.8 Io-Pf CHARACTERISTICS