project and thesis folder 2019 - tu wien · bachelor thesis master thesis. numerical solvers for...
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Project and Thesis Folder 2019
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Pillars of the Institute for MicroelectronicsTeaching Programming in CSimulation Simulation of semiconductor devices and processesExperimental Development of measurementcharacterization equipment
Unique chance to improve teaching quality and scientific research
Optional seminars and practical courses360238 Experimental Device Characterization in Microelectronics360206 Programming
Bachelor ThesisMaster Thesis
Numerical Solvers for Diffusion Equations (using Python)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
One crucial challenge in the production of high aspect ratio (HAR) structures is the depletion of etchantdepositant species at the bottomAn approach to model neutral species (eg ALD precursors) is Knudsen diffusionWhen the Knudsen approach is extended to take into account arbitrary geometries we encounter a system of coupled ODEs
TasksImplement a framework to test different ODE system solversInvestigate the impact of each computational methodCompare to available Monte Carlo and radiosity models
Required knowledgeNumerical methods for ODE (Runge-Kutta Euler hellip)Experience with PythonSciPy is a plusFamiliarity with semiconductor processing is NOT necessary
Supervisor
Luiz Felipe AguinskyContact
aguinskyiuetuwienacat01-58801-36057
Project LA1
GPU Ray Tracing for Non-Visualization Applications
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Supervisor
Luiz Felipe AguinskyPaul ManstettenContact
aguinskyiuetuwienacat01-58801-36057
Project LAPM1
Computer graphics applications take advantage of specialized hardware (GPUs)The idea is to use this hardware to speed up certain computational tasks in semiconductor process simulations flux and visibility calculationsGPU ray tracing can potentially be used for top-down calculations which are particularly relevant for ion transport in plasma processing
TasksDevelop a sample model for flux calculation using Nvidia GVDBEvaluate its performance on different Nvida GPUs
Required knowledgeProgramming in C++Familiarity with semiconductor processing is NOT necessary
Rasterization for Non-Visualization Applications
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Computer graphics applications take advantage of specialized hardware (GPUs)The idea is to use this hardware to speed up certain computational tasks in semiconductor process simulations flux and visibility calculationsRasterization can potentially be used for bottom-up calculations which are particularly relevant for neutral transport in semiconductor processing
TasksDevelop a simple model for direct flux calculations using OpenGL or VulkanEvaluate its performance on different GPUs
Required knowledgeProgramming in CC++Familiarity with semiconductor processing is NOT necessary
Supervisor
Luiz Felipe AguinskyPaul ManstettenContact
aguinskyiuetuwienacat01-58801-36057
Project LAPM2
Absence and Leave Management System
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Web-based holiday and absence planner application is desiredIt should be viewable and acccesible from everywhereAdapt to the existing design of the IuE hompageA standalone tool is desired
TasksImplement a simple leave management systemUser access rights should be made simplePrimary calendar view should be one monthResponsive design
Required knowledgeWebpage and database programmingHTML CSS PythonPerlJava (open source no restrictions)Some knowledge in graphic conceptualization and design desired
Supervisor
Johann CervenkaContact
cervenkaiuetuwienacat01-58801-36038
Project JC1
Modeling Stress in Thin Metal Films
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Modeling stress during metal growth gives insight into essential material propertiesCurrently 2D simulations are used but an extension to 3D is desired
TasksIntroduce 3D to an existing 2D codeUse VTK libraries to export the simulated structure
Required knowledgeProgramming in CC++Use of external C++ libraries (VTK toolkit)
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF1
Modeling Changes in Metal Microstructure during Heating
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Metals change their structure during high temperature annealingSelf-heating can also lead to changes in the grain structureMicrostructure evolution can be simulated using the Potts model
TasksImplement the Potts model to simulate grain structure evolution at high temperatures
Required knowledgeProgramming in CC++Some knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF2
Web Interface GUI for a Metal Stress Simulator
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a simulator which models the stress during metal growthThe simulator can handle a variety of metals and properties
TasksImplement a GUI interface for the simulatorAlternatively implement a web interface for the stress simulator
Required knowledgeProgramming in CC++Experience in one of
Web developmentPython andor Qt
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF3
Modeling Electron Scattering in Copper Wires
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a software tool written in C which tracks how electrons move in different materials such as silicon or copperThe software is currently a small part in a larger code framework but we want to make it an independent code
TasksImplement models for electron motion in CTest the model for various geometries
Required knowledgeProgramming in CSome knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF4
Hot ndash Carrier Degradation (HCD)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model
Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ1
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Numerical Solvers for Diffusion Equations (using Python)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
One crucial challenge in the production of high aspect ratio (HAR) structures is the depletion of etchantdepositant species at the bottomAn approach to model neutral species (eg ALD precursors) is Knudsen diffusionWhen the Knudsen approach is extended to take into account arbitrary geometries we encounter a system of coupled ODEs
TasksImplement a framework to test different ODE system solversInvestigate the impact of each computational methodCompare to available Monte Carlo and radiosity models
Required knowledgeNumerical methods for ODE (Runge-Kutta Euler hellip)Experience with PythonSciPy is a plusFamiliarity with semiconductor processing is NOT necessary
Supervisor
Luiz Felipe AguinskyContact
aguinskyiuetuwienacat01-58801-36057
Project LA1
GPU Ray Tracing for Non-Visualization Applications
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Supervisor
Luiz Felipe AguinskyPaul ManstettenContact
aguinskyiuetuwienacat01-58801-36057
Project LAPM1
Computer graphics applications take advantage of specialized hardware (GPUs)The idea is to use this hardware to speed up certain computational tasks in semiconductor process simulations flux and visibility calculationsGPU ray tracing can potentially be used for top-down calculations which are particularly relevant for ion transport in plasma processing
TasksDevelop a sample model for flux calculation using Nvidia GVDBEvaluate its performance on different Nvida GPUs
Required knowledgeProgramming in C++Familiarity with semiconductor processing is NOT necessary
Rasterization for Non-Visualization Applications
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Computer graphics applications take advantage of specialized hardware (GPUs)The idea is to use this hardware to speed up certain computational tasks in semiconductor process simulations flux and visibility calculationsRasterization can potentially be used for bottom-up calculations which are particularly relevant for neutral transport in semiconductor processing
TasksDevelop a simple model for direct flux calculations using OpenGL or VulkanEvaluate its performance on different GPUs
Required knowledgeProgramming in CC++Familiarity with semiconductor processing is NOT necessary
Supervisor
Luiz Felipe AguinskyPaul ManstettenContact
aguinskyiuetuwienacat01-58801-36057
Project LAPM2
Absence and Leave Management System
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Web-based holiday and absence planner application is desiredIt should be viewable and acccesible from everywhereAdapt to the existing design of the IuE hompageA standalone tool is desired
TasksImplement a simple leave management systemUser access rights should be made simplePrimary calendar view should be one monthResponsive design
Required knowledgeWebpage and database programmingHTML CSS PythonPerlJava (open source no restrictions)Some knowledge in graphic conceptualization and design desired
Supervisor
Johann CervenkaContact
cervenkaiuetuwienacat01-58801-36038
Project JC1
Modeling Stress in Thin Metal Films
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Modeling stress during metal growth gives insight into essential material propertiesCurrently 2D simulations are used but an extension to 3D is desired
TasksIntroduce 3D to an existing 2D codeUse VTK libraries to export the simulated structure
Required knowledgeProgramming in CC++Use of external C++ libraries (VTK toolkit)
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF1
Modeling Changes in Metal Microstructure during Heating
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Metals change their structure during high temperature annealingSelf-heating can also lead to changes in the grain structureMicrostructure evolution can be simulated using the Potts model
TasksImplement the Potts model to simulate grain structure evolution at high temperatures
Required knowledgeProgramming in CC++Some knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF2
Web Interface GUI for a Metal Stress Simulator
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a simulator which models the stress during metal growthThe simulator can handle a variety of metals and properties
TasksImplement a GUI interface for the simulatorAlternatively implement a web interface for the stress simulator
Required knowledgeProgramming in CC++Experience in one of
Web developmentPython andor Qt
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF3
Modeling Electron Scattering in Copper Wires
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a software tool written in C which tracks how electrons move in different materials such as silicon or copperThe software is currently a small part in a larger code framework but we want to make it an independent code
TasksImplement models for electron motion in CTest the model for various geometries
Required knowledgeProgramming in CSome knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF4
Hot ndash Carrier Degradation (HCD)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model
Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ1
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
GPU Ray Tracing for Non-Visualization Applications
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Supervisor
Luiz Felipe AguinskyPaul ManstettenContact
aguinskyiuetuwienacat01-58801-36057
Project LAPM1
Computer graphics applications take advantage of specialized hardware (GPUs)The idea is to use this hardware to speed up certain computational tasks in semiconductor process simulations flux and visibility calculationsGPU ray tracing can potentially be used for top-down calculations which are particularly relevant for ion transport in plasma processing
TasksDevelop a sample model for flux calculation using Nvidia GVDBEvaluate its performance on different Nvida GPUs
Required knowledgeProgramming in C++Familiarity with semiconductor processing is NOT necessary
Rasterization for Non-Visualization Applications
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Computer graphics applications take advantage of specialized hardware (GPUs)The idea is to use this hardware to speed up certain computational tasks in semiconductor process simulations flux and visibility calculationsRasterization can potentially be used for bottom-up calculations which are particularly relevant for neutral transport in semiconductor processing
TasksDevelop a simple model for direct flux calculations using OpenGL or VulkanEvaluate its performance on different GPUs
Required knowledgeProgramming in CC++Familiarity with semiconductor processing is NOT necessary
Supervisor
Luiz Felipe AguinskyPaul ManstettenContact
aguinskyiuetuwienacat01-58801-36057
Project LAPM2
Absence and Leave Management System
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Web-based holiday and absence planner application is desiredIt should be viewable and acccesible from everywhereAdapt to the existing design of the IuE hompageA standalone tool is desired
TasksImplement a simple leave management systemUser access rights should be made simplePrimary calendar view should be one monthResponsive design
Required knowledgeWebpage and database programmingHTML CSS PythonPerlJava (open source no restrictions)Some knowledge in graphic conceptualization and design desired
Supervisor
Johann CervenkaContact
cervenkaiuetuwienacat01-58801-36038
Project JC1
Modeling Stress in Thin Metal Films
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Modeling stress during metal growth gives insight into essential material propertiesCurrently 2D simulations are used but an extension to 3D is desired
TasksIntroduce 3D to an existing 2D codeUse VTK libraries to export the simulated structure
Required knowledgeProgramming in CC++Use of external C++ libraries (VTK toolkit)
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF1
Modeling Changes in Metal Microstructure during Heating
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Metals change their structure during high temperature annealingSelf-heating can also lead to changes in the grain structureMicrostructure evolution can be simulated using the Potts model
TasksImplement the Potts model to simulate grain structure evolution at high temperatures
Required knowledgeProgramming in CC++Some knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF2
Web Interface GUI for a Metal Stress Simulator
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a simulator which models the stress during metal growthThe simulator can handle a variety of metals and properties
TasksImplement a GUI interface for the simulatorAlternatively implement a web interface for the stress simulator
Required knowledgeProgramming in CC++Experience in one of
Web developmentPython andor Qt
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF3
Modeling Electron Scattering in Copper Wires
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a software tool written in C which tracks how electrons move in different materials such as silicon or copperThe software is currently a small part in a larger code framework but we want to make it an independent code
TasksImplement models for electron motion in CTest the model for various geometries
Required knowledgeProgramming in CSome knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF4
Hot ndash Carrier Degradation (HCD)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model
Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ1
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Rasterization for Non-Visualization Applications
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Computer graphics applications take advantage of specialized hardware (GPUs)The idea is to use this hardware to speed up certain computational tasks in semiconductor process simulations flux and visibility calculationsRasterization can potentially be used for bottom-up calculations which are particularly relevant for neutral transport in semiconductor processing
TasksDevelop a simple model for direct flux calculations using OpenGL or VulkanEvaluate its performance on different GPUs
Required knowledgeProgramming in CC++Familiarity with semiconductor processing is NOT necessary
Supervisor
Luiz Felipe AguinskyPaul ManstettenContact
aguinskyiuetuwienacat01-58801-36057
Project LAPM2
Absence and Leave Management System
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Web-based holiday and absence planner application is desiredIt should be viewable and acccesible from everywhereAdapt to the existing design of the IuE hompageA standalone tool is desired
TasksImplement a simple leave management systemUser access rights should be made simplePrimary calendar view should be one monthResponsive design
Required knowledgeWebpage and database programmingHTML CSS PythonPerlJava (open source no restrictions)Some knowledge in graphic conceptualization and design desired
Supervisor
Johann CervenkaContact
cervenkaiuetuwienacat01-58801-36038
Project JC1
Modeling Stress in Thin Metal Films
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Modeling stress during metal growth gives insight into essential material propertiesCurrently 2D simulations are used but an extension to 3D is desired
TasksIntroduce 3D to an existing 2D codeUse VTK libraries to export the simulated structure
Required knowledgeProgramming in CC++Use of external C++ libraries (VTK toolkit)
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF1
Modeling Changes in Metal Microstructure during Heating
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Metals change their structure during high temperature annealingSelf-heating can also lead to changes in the grain structureMicrostructure evolution can be simulated using the Potts model
TasksImplement the Potts model to simulate grain structure evolution at high temperatures
Required knowledgeProgramming in CC++Some knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF2
Web Interface GUI for a Metal Stress Simulator
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a simulator which models the stress during metal growthThe simulator can handle a variety of metals and properties
TasksImplement a GUI interface for the simulatorAlternatively implement a web interface for the stress simulator
Required knowledgeProgramming in CC++Experience in one of
Web developmentPython andor Qt
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF3
Modeling Electron Scattering in Copper Wires
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a software tool written in C which tracks how electrons move in different materials such as silicon or copperThe software is currently a small part in a larger code framework but we want to make it an independent code
TasksImplement models for electron motion in CTest the model for various geometries
Required knowledgeProgramming in CSome knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF4
Hot ndash Carrier Degradation (HCD)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model
Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ1
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Absence and Leave Management System
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Web-based holiday and absence planner application is desiredIt should be viewable and acccesible from everywhereAdapt to the existing design of the IuE hompageA standalone tool is desired
TasksImplement a simple leave management systemUser access rights should be made simplePrimary calendar view should be one monthResponsive design
Required knowledgeWebpage and database programmingHTML CSS PythonPerlJava (open source no restrictions)Some knowledge in graphic conceptualization and design desired
Supervisor
Johann CervenkaContact
cervenkaiuetuwienacat01-58801-36038
Project JC1
Modeling Stress in Thin Metal Films
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Modeling stress during metal growth gives insight into essential material propertiesCurrently 2D simulations are used but an extension to 3D is desired
TasksIntroduce 3D to an existing 2D codeUse VTK libraries to export the simulated structure
Required knowledgeProgramming in CC++Use of external C++ libraries (VTK toolkit)
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF1
Modeling Changes in Metal Microstructure during Heating
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Metals change their structure during high temperature annealingSelf-heating can also lead to changes in the grain structureMicrostructure evolution can be simulated using the Potts model
TasksImplement the Potts model to simulate grain structure evolution at high temperatures
Required knowledgeProgramming in CC++Some knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF2
Web Interface GUI for a Metal Stress Simulator
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a simulator which models the stress during metal growthThe simulator can handle a variety of metals and properties
TasksImplement a GUI interface for the simulatorAlternatively implement a web interface for the stress simulator
Required knowledgeProgramming in CC++Experience in one of
Web developmentPython andor Qt
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF3
Modeling Electron Scattering in Copper Wires
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a software tool written in C which tracks how electrons move in different materials such as silicon or copperThe software is currently a small part in a larger code framework but we want to make it an independent code
TasksImplement models for electron motion in CTest the model for various geometries
Required knowledgeProgramming in CSome knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF4
Hot ndash Carrier Degradation (HCD)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model
Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ1
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Modeling Stress in Thin Metal Films
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Modeling stress during metal growth gives insight into essential material propertiesCurrently 2D simulations are used but an extension to 3D is desired
TasksIntroduce 3D to an existing 2D codeUse VTK libraries to export the simulated structure
Required knowledgeProgramming in CC++Use of external C++ libraries (VTK toolkit)
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF1
Modeling Changes in Metal Microstructure during Heating
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Metals change their structure during high temperature annealingSelf-heating can also lead to changes in the grain structureMicrostructure evolution can be simulated using the Potts model
TasksImplement the Potts model to simulate grain structure evolution at high temperatures
Required knowledgeProgramming in CC++Some knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF2
Web Interface GUI for a Metal Stress Simulator
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a simulator which models the stress during metal growthThe simulator can handle a variety of metals and properties
TasksImplement a GUI interface for the simulatorAlternatively implement a web interface for the stress simulator
Required knowledgeProgramming in CC++Experience in one of
Web developmentPython andor Qt
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF3
Modeling Electron Scattering in Copper Wires
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a software tool written in C which tracks how electrons move in different materials such as silicon or copperThe software is currently a small part in a larger code framework but we want to make it an independent code
TasksImplement models for electron motion in CTest the model for various geometries
Required knowledgeProgramming in CSome knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF4
Hot ndash Carrier Degradation (HCD)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model
Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ1
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Modeling Changes in Metal Microstructure during Heating
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Metals change their structure during high temperature annealingSelf-heating can also lead to changes in the grain structureMicrostructure evolution can be simulated using the Potts model
TasksImplement the Potts model to simulate grain structure evolution at high temperatures
Required knowledgeProgramming in CC++Some knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF2
Web Interface GUI for a Metal Stress Simulator
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a simulator which models the stress during metal growthThe simulator can handle a variety of metals and properties
TasksImplement a GUI interface for the simulatorAlternatively implement a web interface for the stress simulator
Required knowledgeProgramming in CC++Experience in one of
Web developmentPython andor Qt
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF3
Modeling Electron Scattering in Copper Wires
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a software tool written in C which tracks how electrons move in different materials such as silicon or copperThe software is currently a small part in a larger code framework but we want to make it an independent code
TasksImplement models for electron motion in CTest the model for various geometries
Required knowledgeProgramming in CSome knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF4
Hot ndash Carrier Degradation (HCD)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model
Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ1
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Web Interface GUI for a Metal Stress Simulator
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a simulator which models the stress during metal growthThe simulator can handle a variety of metals and properties
TasksImplement a GUI interface for the simulatorAlternatively implement a web interface for the stress simulator
Required knowledgeProgramming in CC++Experience in one of
Web developmentPython andor Qt
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF3
Modeling Electron Scattering in Copper Wires
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a software tool written in C which tracks how electrons move in different materials such as silicon or copperThe software is currently a small part in a larger code framework but we want to make it an independent code
TasksImplement models for electron motion in CTest the model for various geometries
Required knowledgeProgramming in CSome knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF4
Hot ndash Carrier Degradation (HCD)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model
Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ1
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Modeling Electron Scattering in Copper Wires
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
We have a software tool written in C which tracks how electrons move in different materials such as silicon or copperThe software is currently a small part in a larger code framework but we want to make it an independent code
TasksImplement models for electron motion in CTest the model for various geometries
Required knowledgeProgramming in CSome knowledge in metal microstructure
Supervisor
Lado FilipovicContact
filipoviciuetuwienacat01-58801-36036
Project LF4
Hot ndash Carrier Degradation (HCD)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model
Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ1
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Hot ndash Carrier Degradation (HCD)
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon
Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model
Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ1
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Interplay of Degradation Mechanisms
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD
Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena
Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ2
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Atomistic Simulations
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies
Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches
Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ3
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Simulation Framework
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)
bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters
Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries
Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics
Supervisor
Markus JechContact
jechiuetuwienacat01-58801-36034
Project MJ4
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
GUI for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed
TasksBuild a GUI for the simulator (QtPythonElectron)
Required knowledgeProgramming in C++Experience in web developementQt
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK1
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Build a JSON parser for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data
TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input
Required knowledgeProgramming in C++
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK2
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Cell based surface representation for ViennaTS
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information
TasksImplement an additional cell based surface representation to save volume information when necessary
Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions
Betreuer
Xaver KlemenschitsContact
klemenschitsiuetuwienacat01-58801-36026
Project XK3
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Modeling of MOSFETs based on 2D Materials
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic
Calibrate the models to measurement data
TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences
Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK1
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
3D Printing of FET Models
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components
parts should form a 3D puzzle
3D Printing of the components
TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes
Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing
Supervisor
Theresia KnoblochContact
knoblochiuetuwienacat01-58801-36059
Project TK2
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Domain Decomposition for Parallel Velocity Extension
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems
TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization
Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming
Supervisor
Michael QuellContact
quelliuetuwienacat01-58801-36018
Project MQ1
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Dopant Diffusion in Process TCAD
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device
TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices
Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering
Supervisor
Alexander ToiflContact
toifliuetuwienacat01-58801-36067
Project AT1
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Atomistic Modeling Interaction of Oxide Defects with Electric Fields
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)
In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically
TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators
Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW1
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Atomistic Modeling Extending the 4-State Defect Model
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior
TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals
Required knowledgeSolid understanding of physicsLinux Programming in Python
Supervisor
Dominic WaldhoerContact
waldhoeriuetuwienacat01-58801-36055
Project DW2
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database
TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data
RequirementsBasic knowledge of PythonHandling of UNIX operating system
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW1
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-
Hardware- and Software Development for Defect Probing Instrument
Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria
Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface
TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)
RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design
Supervisor
Michael WaltlContact
waltliuetuwienacat01-58801-36050
Project MW2
- Project and Thesis Folder 2019
- Numerical Solvers for Diffusion Equations (using Python)
- GPU Ray Tracing for Non-Visualization Applications
- Rasterization for Non-Visualization Applications
- Absence and Leave Management System
- Modeling Stress in Thin Metal Films
- Modeling Changes in Metal Microstructure during Heating
- Web Interface GUI for a Metal Stress Simulator
- Modeling Electron Scattering in Copper Wires
- Hot ndash Carrier Degradation (HCD)
- Interplay of Degradation Mechanisms
- Atomistic Simulations
- Simulation Framework
- GUI for ViennaTS
- Build a JSON parser for ViennaTS
- Cell based surface representation for ViennaTS
- Modeling of MOSFETs based on 2D Materials
- 3D Printing of FET Models
- Domain Decomposition for Parallel Velocity Extension
- Dopant Diffusion in Process TCAD
- Atomistic Modeling Interaction of Oxide Defects with Electric Fields
- Atomistic Modeling Extending the 4-State Defect Model
- Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy
- Hardware- and Software Development for Defect Probing Instrument
-