pvd 1 – bestec 3-in-1 deposition system · the bestec 3-in-1 deposition system (pvd 1) provides...

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PVD 1 – Bestec 3-in-1 Deposition System

Standard Operating Procedure

4D LABS Confidential

Revision: 1.2 — Last Updated: November 8/2010, Revised by Chris Balicki

Overview

This document will provide a detailed operation procedure of the PVD 1 System. Formal Training is re-

quired for all users prior to using the system.

Revision History

# Revised by: Date Modification

0 Tom Cherng 2008/09/10 Document Initial Release

1 Chris Balicki 2010/06/28 Document Review and Revision

2 Chris Balicki 2010/11/08 Revised Startup/Shutdown Procedure

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Document No. 4DSOP000X

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Table of Contents

Overview.................................................................................................................................................. 1

Revision History ........................................................................................................................................ 1

Table of Contents ..................................................................................................................................... 2

General Information ................................................................................................................................. 3

Operation ................................................................................................................................................ 3

Ensuring System Readiness .................................................................................................................. 3

Vent Load-Lock Chamber .................................................................................................................... 4

Pump Load-Lock Chamber .................................................................................................................. 4

Sample Loading .................................................................................................................................. 5

Sample Unloading ............................................................................................................................... 5

Datalogging ........................................................................................................................................ 6

System Shutdown ................................................................................................................................ 6

System Startup .................................................................................................................................... 7

Evaporation Deposition ............................................................................................................................ 8

Thermal Evaporation ........................................................................................................................... 8

Electron B Evaporation Deposition ....................................................................................................... 8

Sputter Deposition ................................................................................................................................. 10

DC Sputtering ................................................................................................................................... 10

RF Sputtering .................................................................................................................................... 12

References and Files ............................................................................................................................... 14

Contact Information ............................................................................................................................... 14

Appendix ............................................................................................................................................... 15

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General Information

The Bestec 3-in-1 Deposition System (PVD 1) provides thermal and electron beam deposition, as well as

sputter deposition capability. There are 2 thermal sources, a 4 pocket e-beam source, and 4 sputter guns

(2 DC / 2 RF). The system can process samples up to 4‛ in diameter and up to 2mm thick. The system is

designed to be a multipurpose tool and thus provides the greatest flexibility in material deposition capabili-

ty. For an up to date list of allowed materials, please contact the nanofabrication staff. The system has a

load-lock chamber for quick access in/out of the process chamber. The system also has substrate heat-

ing/cooling capability. Other capabilities include co-deposition from thermal and electron-beam sources,

insulator deposition via RF sputter sources, and pressure, substrate height and rotation control for recipe

process control.

Operation

Ensuring System Readiness In general, the system software and hardware are quite stable. At all times, the operation software should be on and all interlocks satisfied. If for any reason the software is off or requires restarting, the user is permitted to turn on/restart the soft-ware.

1. To turn on the operation software, double click the ‚Main 2.3vi‛ icon located on the desktop. 2. Ensure that all hardware initialized correctly (green check marks acknowledged for all hardware on

pop-up window) 3. Ensure that all interlocks under System Status are satisfied (green). Click ‘Water Valve’ if necessary.

Confirm that water flow is active on the side of the tool. (Data Logging is not an interlock – red indicates it is off, green indicates that it is on)

4. Login in as ‘Administrator’. Password is ‘sfu’. 5. Enter Motion Control and click ‘Initialize’ for both substrate height and rotation. This ensures the

manipulator is calibrated. 6. The system is now ready for user operation.

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Vent Load-Lock Chamber

1. Click on the load-lock turbo pump icon and click ‘Stop’. 2. Wait for rotation speed to reach 0 RPM. 3. Open the load-lock chamber door.

Pump Load-Lock Chamber

1. Close the load-lock chamber door. Press firmly on the double-hinged side of the door to ensure a seal is made at that point.

2. Click on the load-lock turbo pump icon and click ‘Start’. 3. Squeeze the chamber door from the top and bottom until the roughing/turbo pump turn on and

are operating efficiently (pumping will be silent & the foreline pressure will drop quickly).

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Sample Loading

1. Perform Vent Load-Lock Chamber procedure. 2. Ensure that your samples are secure on the substrate holder and that height of the samples/clips

securing them do not exceed the height of the substrate holder lip. (The substrate holder will slide on its flat surface inside the manipulator, so objects exceeding the lip height of the holder are at risk of damage/falling inside the process chamber)

3. Thread the holder just finger tight onto the transfer arm by rotating the transfer arm clockwise.

4. Position the holder horizontally such that your samples are facing downward. 5. Perform the Pump Load-Lock Chamber procedure. 6. Wait until the load-lock reaches a pressure of <2.0E-6mbar. 7. Open the VAT Valve by clicking on the colour portion of the VAT Valve icon. (Red indicates closed

position, green indicates open position.) 8. Slowly insert the sample holder into the manipulator by moving the transfer arm forward while en-

suring that it stays in the horizontal position. Continue to push the arm forward until the transfer arm handle lines up with the blue line.

9. Unscrew the sample holder by rotating the transfer arm counterclockwise at least 5 full rotations. 10. Return the transfer arm to its original position. 11. Close the VAT Valve.

Sample Unloading

1. Enter Motion Control and click ‘Go To Transfer Position’. 2. Open the VAT Valve. 3. Insert the transfer arm into the process chamber until it comes in contact with the sample holder. 4. With a slight pressure exerted onto the sample holder, thread the sample holder onto the transfer

arm by rotating it clockwise until it is finger tight.

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5. Return the transfer arm to its original position while ensuring it is not rotated. 6. Close the VAT Valve. 7. Perform the Vent Load-Lock Chamber procedure. 8. Remove the sample holder by firmly gripping it while rotating the transfer arm counter clockwise. 9. Perform the Pump Load-Lock Chamber procedure.

Data logging

1. Under System Status, confirm that the Data Logging Indicator is red (off). 2. Click 'Start Data Log'. 3. Save your data log to C:\Documents and Settings\4dlabs\My Documents\Data. (If desired, create a

new folder within the directory). 4. Confirm that the Data Logging indicator is green (on). 5. When finished, click 'Stop Data Log'. 6. To retrieve your file, check with the Nanofabrication Staff.

Please ensure that you format your flash drive prior to inserting it into the system computer. Do not store any sort of files on the computer. Data logs will be regularly deleted from the system.

System Shutdown

1. Vent the load-lock and the process chamber. 2. Close water valve by software. Confirm that water flow interlock is red. 3. Pull back transfer rod. Confirm that transfer rod interlock is green. 4. Record deposition parameters such as CLOAD & CTUNE for RF1/2 and start/working powers for all

sputter sources. 5. Close Main 2.3.vi operation software by clicking ‘File’ → ‘Exit’. 6. Switch off computer by clicking ‘Start’ → ‘Turn Off Computer’ → ‘Turn Off’. (Frontside of equipment rack) 7. Power off the MKS Controller via the menu interface. 8. Turn off all devices. (Bottom of process chamber rack) 9. Turn off both thermal power supplies. (Backside of equipment rack) 10. Turn off the remaining devices (see figure 1). 11. Turn off breaker switches (see figure 2). (Frontside of equipment rack) 12. Switch off main power switch.

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Figure 1: Power switches inside equipment rack

Figure 2: Breaker switches

System Startup

1. Switch on main power switch. (Backside of equipment rack) 2. Turn on breaker switches (see figure 2). 3. Turn on the remaining devices (see figure 1). (Bottom of process chamber rack) 4. Turn on both thermal power supplies. (Frontside of equipment rack) 5. Turn on all devices. 6. Power on the MKS Controller. Confirm that parameters have been retained. 7. Switch on the computer. 8. Confirm that transfer rod is pulled back. 9. Start Main 2.3.vi operation software by double-clicking the ‘Bestec UHV Evaporation’ icon. 10. Re-enter deposition parameters recorded prior to shutdown. 11. Open water valve by software. Confirm that water flow interlock is green. 12. Inspect chamber. Once finished, perform pump down procedure.

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Evaporation Deposition

Note: For up-to-date source status and operation parameters, please check the Materials Information sheet posted near the equipment. Deposition should take place at a pressure of <2.0E-6mbar.

THERMAL Evaporation

1. Select the desired evaporation source: Th1 or Th2 2. Enter Motion Control. Under Height Adjustment, enter 0mm for setpoint and click ‘Go’. 3. Under Substrate Controls, click ‘Start Rotation’. 4. If desired, turn on ‘Substrate Cooling’. (When on, the button is indented and beige in colour.

When off, the button is protruded and white in colour.) 5. Under Source Controls, click ‘Open Shutter’. 6. Ensure the Material Density, Z-Ratio and Tooling Factor are correct. 7. Enter 0 for Start Current. 8. Enter desired Rise Time (check Materials Information sheet). 9. Enter desired Work Current (check Materials Information sheet). 10. Click ‘Start’. 11. Observe the Thickness & Rate indicators under Substrate Indicators. 12. Observe the Source Indicators and ensure they are stable/behave as expected. 13. Once the desired deposition rate is achieved, click ‘Open Shutter’ & ‘Zero Thickness’ under Sub-

strate Controls. 14. Once the desired thickness is achieved, click ‘Close Shutter’ under Substrate Controls. 15. Under Source Controls, click ‘Stop’ & ‘Close Shutter’. 16. If on, turn off substrate cooling. 17. Under Substrate Controls, click ‘Stop Rotation’. 18. Wait for the source to ramp down to 0W.

ELECTRON BEAM Evaporation

1. Select the e-beam source: E-Vap 2. Enter Motion Control. Under Height Adjustment, enter 0mm for setpoint and click ‘Go’. 3. Under Source Indicators, confirm that the desired material is selected. Under Source Controls, en-

sure the Material Density, Z-Ratio and Tooling Factor are correct. If yes, proceed to step 3. If no, proceed to step 2a.

a. On the top left of the screen, click ‘Edit’ → ‘Setup Sources’. b. Select the E-Vap source. c. Click ‘Empty Source’. d. Click ‘Select Material’ and double click on the desired material. e. Close the window.

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f. Open/Close the source shutter in order to refresh the Source/Substrate Indicators. g. Verify that the Material Density, Z-Ratio and Tooling Factor are correct.

4. On the tool, manually load the desired e-beam source by rotating the black handle such that it aligns with the corresponding hash mark.

5. Under Substrate Controls, click ‘Start Rotation’. 6. If desired, turn on ‘Substrate Cooling’. (When on, the button is indented and beige in colour.

When off, the button is protruded and white in colour.) 7. Under Source Controls, click ‘Open Shutter’. 8. Take hold of the e-beam controller and confirm that all interlocks read ‘OK’. 9. Press ‘Menu’. 10. Under the Set Pocket Menu, select the desired material data file. Press ‘Menu’ to return to the

main display. 11. Turn on HV by pressing the green button. The button will blink shortly after. 12. While observing the source through the viewport, slowly increase emission current according to the

ramp rate as given on the Materials Information sheet. ENSURE THAT THE BEAM IS HITTING THE CENTER OF THE SOURCE. It is difficult to assess this when the source is cold. Once the source heats up and the beam power is increased, it is easier to asses the position and shape of the beam. The position of the beam does change slightly as the source heats up. There should be very little blue arcing/sparking/other abnormalities. If unsure, please consult Nanofa-brication Staff. 13. If needed, adjust the beam position. If major adjustments are required, please consult the Nanofa-

brication Staff. 14. Observe the Thickness & Rate indicators under Substrate Indicators. 15. Once the desired deposition rate is achieved, click ‘Open Shutter’ & ‘Zero Thickness’ under Sub-

strate Controls. 16. Continue to observe the electron beam and the emission current. Ensure they are stable/behave as

expected. 17. Once the desired thickness is achieved, click ‘Close Shutter’ under Substrate Controls. 18. Slowly decrease emission current according to the ramp rate as given on the Materials Information

sheet. 19. Once 0mA emission current is reached, turn off HV by pressing the red button. 20. Under Source Controls, click ‘Close Shutter’. 21. If on, turn off substrate cooling. 22. Under Substrate Controls, click ‘Stop Rotation’.

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Sputter Deposition

Note: For up-to-date source status and operation parameters, please check the Materials Information sheet posted near the equipment. Deposition should take place at a pressure of <2.0E-6mbar. Sputter Deposition allows for control over several variables. Common variables include power, pressure, source-substrate distance, substrate bias, etc. A set of operating conditions is provided and the resulting deposition rate. Film stress, grain size, overall quality, etc. can be controlled by adjusting these variables. It is up to the user to develop a process that will meet their requirements.

DC Sputtering

1. Select the desired sputter source: DC1 or DC2. 2. Under Mode, select either Pressure Control of Flow Control.

a. If Pressure Control is selected: i. Enter the desired pressure (2.0E-3 – 2.0E-2). ii. Open the needle valve on the chosen DC source. iii. Monitor Gauge 1 and the Baratron Gauge and confirm that the chamber pressure

is converging on the setpoint. Verify that Ar flow is present on the Multi Gas Con-troller MKS 647C. If not enter the Pressure Control Menu on the MKS 647C and cycle the MODE options from AUTO back to AUTO. Verify that Ar flow increases and that PRESSURE begins to converge on SETPOINT.

b. If Flow Control is selected: i. Enter the desired flow rates (sccm) and open the corresponding valves by clicking

on the valve icon. ii. Open the needle valve on the chosen DC source. iii. Verify that gas flow is present.

3. Enter Motion Control. Under Height Adjustment, enter the desired setpoint and click ‘Go’.

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4. Adjust the tilt of the sputter gun to the desired value. Refer to the Aiming Point Source to Sub-strate vs. Scale Value Source chart in order to determine the correct tilt for the chosen substrate height. Minimum allowable setting is 0.35 tilt. One full turn (25 div.) on the fine scale moves 0.05 on the coarse scale. Refer to Appendix for further information.


When off, the button is protruded and white in colour.) 7. Under Source Controls, click ‘Open Shutter’. 8. Ensure the Material Density, Z-Ratio and Tooling Factor are correct. 9. Enter 50 for Start Power. 10. Enter desired Rise Time (check Materials Status sheet). 11. Enter desired Work Power (check Materials Status sheet). 12. Click ‘Start’. 13. Verify that the plasma has ignited. CLOSE ALL VIEWPORTS. 14. Allow for >3min presputtering in order to clean the surface of the target. 15. Observe the Thickness & Rate indicators under Substrate Indictors. 16. Observe the Source Indicators and ensure that they are stable/behave as expected. 17. When ready, under Substrate Controls, click ‘Open Shutter’ and start your timer. You may ‘Zero

Thickness’ and monitor the approximate deposition rate/thickness. 18. Once the desired time interval has elapsed/thickness is achieved, click ‘Close Shutter’ under Sub-

strate Controls. 19. Under Source Controls, click ‘Stop’ & ‘Close Shutter’. 20. Under Mode, return to Pump Down Mode. 21. Close the needle valve on the sputter gun source. 22. Return the sputter gun to the upright position (1.0 tilt). 23. If on, turn off substrate cooling. 24. Under Substrate Controls, click ‘Stop Rotation’.

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RF Sputtering

1. Select the desired sputter source: RF1 or RF2. 2. Under Mode, select either Pressure Control of Flow Control.

a. If Pressure Control is selected: i. Enter the desired pressure (2.0E-3 – 2.0E-2). ii. Open the needle valve on the chosen RF source. iii. Monitor Gauge 1 and the Baratron Gauge and confirm that the chamber pressure

is converging on the setpoint. Verify that Ar flow is present on the Multi Gas Con-troller MKS 647C. If not enter the Pressure Control Menu on the MKS 647C and cycle the MODE options from AUTO back to AUTO. Verify that Ar flow increases and that PRESSURE begins to converge on SETPOINT.

b. If Flow Control is selected: i. Enter the desired flow rates (sccm) and open the corresponding valves by clicking

on the valve icon. ii. Open the needle valve on the chosen RF source. iii. Verify that gas flow is present.

3. Enter Motion Control. Under Height Adjustment, enter the desired setpoint and click ‘Go’. 4. Adjust the tilt of the sputter gun to the desired value. Refer to the Aiming Point Source to Sub-

strate vs. Scale Value Source chart in order to determine the correct tilt for the chosen substrate height. Minimum allowable setting is 0.35 tilt. One full turn (25 div.) on the fine scale moves 0.05 on the coarse scale. Refer to Appendix for further information.

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When off, the button is protruded and white in colour.) 7. Under Source Controls, click ‘Open Shutter’. 8. Ensure the Material Density, Z-Ratio and Tooling Factor are correct. 9. Enter 50 for Start Power. 10. Enter desired Rise Time (check Materials Status sheet). 11. Enter desired Work Power (check Materials Status sheet). 12. Ensure that the DC BIAS, CLOAD & CTUNE values are correct. 13. Click ‘Start’.

The plasma will not ignite. However, Forward Power and Reflected Power will register values as the power supply is trying to ignite plasma. To ignite the plasma, it requires a 'jump start' from a DC source.

14. Select a DC source. Verify that parameters are correct. Open the source shutter and click ‘Start’. Both plasmas should ignite.

15. Verify that the plasma has ignited. CLOSE ALL VIEWPORTS. 16. Close the DC source shutter and turn off the DC source. 17. Return to the active RF source and close/open the shutter (this refreshes the material parameters). 18. Under Source Indicators, verify that Reflected Power is 0W. If not, adjust CTUNE initially to achieve

0W. If not possible, adjust CLOAD and CTUNE. If necessary, please consult the Nanofabrication Staff. 19. Allow for >3min presputtering in order to clean the surface of the target. 20. Observe the Thickness & Rate indicators under Substrate Indictors. 21. Observe the Source Indicators and ensure that they are stable/behave as expected. 22. When ready, under Substrate Controls, click ‘Open Shutter’ and start your timer. You may ‘Zero

Thickness’ and monitor the approximate deposition rate/thickness.

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23. Once the desired time interval has elapsed/thickness is achieved, click ‘Close Shutter’ under Sub-strate Controls.

24. Under Source Controls, click ‘Stop’ & ‘Close Shutter’. 25. Under Mode, return to Pump Down Mode. 26. Close the needle valve on the sputter gun source. 27. Return the sputter gun to the upright position (1.0 tilt). 28. If on, turn off substrate cooling. 29. Under Substrate Controls, click ‘Stop Rotation’.

References and Files

Assorted hardcopy manuals located near tool and electronic manuals located on system PC.

Contact Information

Questions or comments in regard to this document should be directed towards Chris Balicki (balick-

[email protected]) in 4D LABS at Simon Fraser University, Burnaby, BC, Canada.

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Appendix

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