Multiple Choice Questions on

Semiconductor Principles

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The Following Section consists of Multiple Choice Questions on SemiconductorPrinciples.

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1 points1. Question

A P-N junction mimics a closed switch when it:

1. is reverse biased

2. cannot overcome its barrier voltage

3. has a low junction resistance

4. has a wide depletion region

1 points2. Question

In “p” type material, minority carriers would be:

1. holes

2. slower

3. electrons

4. dopants

1 points3. Question

Solid state devices were first manufactured during:

1. 1907

2. 1904

3. 1960

4. World War 2

1 points4. Question

When and who discovered that more than one transistor could be constructedon a single piece of semiconductor material:

1. 1955, Walter Bratten

2. 1959, Robert Noyce

3. 1949, William Schockley

4. 1960, John Bardeen

1 points5. Question

When an electron jumps from the valence shell to the conduction band, itleaves a gap. What is this gap called?

1. energy gap

2. recombination

3. hole

4. electron-hole pair

1 points6. Question

Silicon atoms combine into an orderly pattern called a:

1. covalent bond

2. valence orbit

3. crystal

4. semiconductor

1 points7. Question

Which material may also be considered a semiconductor element?

1. mica

2. carbon

3. argon

4. ceramic

1 points8. Question

A commonly used pentavalent material is:

1. gallium

2. boron

3. neon

4. arsenic

1 points9. Question

Electron pair bonding occurs when atoms:

1. lack holes

2. share holes

3. lack electrons

4. share electrons

1 points10. Question

What is an energy gap?

1. the space between two orbital shells

2. the energy equal to the energy acquired by an electron passing a 1 V electric field

3. the energy band in which electrons can move freely

4. an energy level at which an electron can exist

1 points11. Question

Elements with 1, 2, or 3 valence electrons usually make excellent:

1. conductors

2. semiconductors

3. insulators

4. neutral

1 points12. Question

What is the most significant development in electronics since World War II?

1. the development of the TRIAC

2. the development of color TV

3. the development of the diode

4. the development of the transistor

1 points13. Question

When is a P-N junction formed?

1. in a large reverse biased region

2. in a depletion region

3. whenever there is a forward voltage drop

4. the point at which two opposite doped materials come together

1 points14. Question

Forward bias of a silicon P-N junction will produce a barrier voltage ofapproximately how many volts?

1. 0.3

2. 0.2

3. 0.7

4. 0.8

1 points15. Question

Which semiconductor material is made from coal ash?

1. tin

2. silicon

3. germanium

4. carbon

1 points16. Question

What can a semiconductor sense?

1. temperature

2. magnetism

3. pressure

4. all

1 points17. Question

What causes the depletion region?

1. barrier potential

2. doping

3. diffusion

4. ions

1 points18. Question

Ionization within a P-N junction causes a layer on each side of the barriercalled the:

1. barrier voltage

2. junction

3. depletion region

4. forward voltage

1 points19. Question

Intrinsic semiconductor material is characterized by a valence shell of howmany electrons?

1. 2

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2. 4

3. 1

4. 6

1 points20. Question

In “n” type material, majority carriers would be:

1. slower

2. dopants

3. holes

4. electrons

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