rb215t-90

4
RB215T-90 Diodes Rev.C 1/3 Schottky barrier diode RB215T-90 Applications Dimensions (Unit : mm) Structure General rectification (Common cathode dual chip) Features 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25° C) Electrical characteristic (Ta=25° C) Symbol Min. Typ. Max. Unit Forward characteristics V F - - 0.75 V I F =10A Reverse characteristics I R - - 400 μA V R =90V Thermal impedance θjc - - 1.75 /W junction to case Parameter Conditions ROHM : TO220FN Manufacture Date 1.2 1.3 0.8 (1) (2) (3) 10.0±0.3 0.1 5.0±0.2 8.0±0.2 12.0±0.2 2.8±0.2 0.1 4.5±0.3 0.1 0.7±0.1 0.05 2.6±0.5 13.5MIN 8.0 15.0±0.4 0.2 Symbol Unit V RM V V R V Io A I FSM A Tj Tstg -40 to +150 Storage temperature (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=110Average rectified forward current(*1) 20 Forward current surge peak 60Hz1cyc(*1) Junction temperature 100 150 Limits 90 90 Parameter Reverse voltage (repetitive) Reverse voltage (DC)

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Page 1: rb215t-90

RB215T-90 Diodes

Rev.C 1/3

Schottky barrier diode RB215T-90

Applications Dimensions (Unit : mm) Structure General rectification (Common cathode dual chip)

Features 1) Small power mold type.

(PMDU) 2) Low IR 3) High reliability

Construction Silicon epitaxial planar

Absolute maximum ratings (Ta=25°C)

Electrical characteristic (Ta=25°C)

Symbol Min. Typ. Max. UnitForward characteristics VF - - 0.75 V IF=10AReverse characteristics IR - - 400 µA VR=90VThermal impedance θjc - - 1.75 ℃/W junction to case

Parameter Conditions

ROHM : TO220FN

① Manufacture Date

1.2

1.3

0.8

(1) (2) (3)

10.0±0.3    0.1

5.0

±0.2

8.0

±0.2

12.0

±0.2

2.8±0.2    0.1

4.5±0.3    0.1

0.7±0.1 0.05

2.6±0.5

13.5

MIN

8.01

5.0

±0.4

  0

.2

Symbol UnitVRM VVR VIo A

IFSM ATj ℃

Tstg ℃-40 to +150Storage temperature(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=110℃

Average rectified forward current(*1) 20Forward current surge peak (60Hz・1cyc)(*1)Junction temperature

100150

Limits9090

ParameterReverse voltage (repetitive)Reverse voltage (DC)

Page 2: rb215t-90

RB215T-90 Diodes

Rev.C 2/3

Electrical characteristic curves

0.1

1

10

100

0.001 0.1 10 1000

Rth(j-a)

Rth(j-c)

1ms

IM=100mA IF=10A

300us

time

FORWARD VOLTAGE:VF(mV)VF-IF CHARACTERISTICS

FO

RW

AR

D C

UR

REN

T:IF

(A)

REV

ER

SE C

UR

REN

T:IR

(uA

)

REVERSE VOLTAGE:VR(V)VR-IR CHARACTERISTICS

CA

PA

CIT

AN

CE B

ETW

EEN

TER

MIN

ALS:C

t(pF)

REVERSE VOLTAGE:VR(V)VR-Ct CHARACTERISTICS

VF DISPERSION MAP

FO

RW

AR

D V

OLTA

GE:V

F(m

V)

REV

ER

SE C

UR

REN

T:IR

(uA

)

IR DISPERSION MAP

CA

PA

CIT

AN

CE B

ETW

EEN

TER

MIN

ALS:C

t(pF)

Ct DISPERSION MAP

PEA

K S

UR

GE

FO

RW

AR

D C

UR

REN

T:IF

SM

(A)

PEA

K S

UR

GE

FO

RW

AR

D C

UR

REN

T:IF

SM

(A)

NUMBER OF CYCLESIFSM-CYCLE CHARACTERISTICS

PEA

K S

UR

GE

FO

RW

AR

D C

UR

REN

T:IF

SM

(A)

TIME:t(s)IFSM-t CHARACTERISTICS

TIME:t(s)Rth-t CHARACTERISTICS

TR

AN

SIE

NT

TH

AER

MA

L IM

PED

AN

CE:R

th (

℃/W

)

FO

RW

AR

D P

OW

ER

DIS

SIP

ATIO

N:P

f(W

)

AVERAGE RECTIFIEDFORWARD CURRENT:Io(A)Io-Pf CHARACTERISTICS

0.01

0.1

1

10

100

0 100 200 300 400 500 600 700 800 900 1000

Ta=-25℃

Ta=125℃

Ta=75℃

Ta=25℃

Ta=150℃

0.1

1

10

100

1000

10000

100000

1000000

0 10 20 30 40 50 60 70 80 90

Ta=-25℃

Ta=125℃

Ta=25℃

Ta=75℃

Ta=150℃

1

10

100

1000

10000

0 10 20 30

f=1MHz

670

680

690

700

710

720

AVE:692.7mV

Ta=25℃IF=10An=30pcs

0

50

100

150

200

250

300

Ta=25℃VR=90Vn=30pcs

AVE:46.0uA

1200

1210

1220

1230

1240

1250

1260

1270

1280

1290

1300

AVE:1257.3pF

Ta=25℃f=1MHzVR=0Vn=10pcs

0

50

100

150

200

250

300

AVE:168.0A

8.3ms

Ifsm 1cyc

1

10

100

1000

1 10 100

8.3ms

Ifsm

1cyc

8.3ms

10

100

1000

1 10 100

tIfsm

0

10

20

30

40

50

0 10 20 30 40 50

DC

D=1/2

Sin(θ=180)

trr DISPERSION MAP

RESER

VE R

EC

OV

ER

Y T

IME:trr

(ns)

0

5

10

15

20

25

30

AVE:21.6ns

Ta=25℃IF=0.5AIR=1A

Irr=0.25*IRn=10pcs

IFSM DISPERSION MAP

Page 3: rb215t-90

RB215T-90 Diodes

Rev.C 3/3

REV

ER

SE P

OW

ER

DIS

SIP

ATIO

N:P

R (W

)

REVERSE VOLTAGE:VR(V)VR-PR CHARACTERISTICS

AMBIENT TEMPERATURE:Ta(℃)Derating Curve゙(Io-Ta)

AV

ER

AG

E R

EC

TIF

IED

FO

RW

AR

D C

UR

REN

T:Io

(A)

AV

ER

AG

E R

EC

TIF

IED

FO

RW

AR

D C

UR

REN

T:Io

(A)

CASE TEMPARATURE:Tc(℃)Derating Curve゙(Io-Tc)

0

10

20

30

0 10 20 30 40 50 60 70 80 90

DC

D=1/2

Sin(θ=180)

0

10

20

30

40

50

60

0 25 50 75 100 125 150

T Tj=150℃

D=t/Tt

VR

Io

VR=45V

0A

0V

Sin(θ=180)

DCD=1/2

0

10

20

30

40

50

60

0 25 50 75 100 125 150

T Tj=150℃

D=t/Tt

VR

Io

VR=45V

0A

0V

Sin(θ=180)

DCD=1/2

0

5

10

15

20

25

30

No Break at 30kV

C=100pFR=1.5kΩ

C=200pFR=0Ω

AVE:11.6kV

ELEC

TR

OSTA

TIC

DIS

CH

AR

GE T

EST E

SD

(KV

)

ESD DISPERSION MAP

Page 4: rb215t-90

NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be separately delivered.Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuitsand deciding upon circuit constants in the set.Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of anythird party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices.Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer.Products listed in this document are no antiradiation design.

Appendix1-Rev2.0

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office.

ROHM Customer Support System THE AMERICAS / EUROPE / ASIA / JAPAN

Contact us : webmaster@ rohm.co. jpwww.rohm.com

Copyright © 2007 ROHM CO.,LTD.

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys).Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.

21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121FAX : +81-75-315-0172

Appendix