r&d on innovative solar cells koichi sakuta pv in aist

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  • 8/6/2019 R&D on Innovative Solar Cells Koichi SAKUTA PV in AIST

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    Photovoltaic Research in AIST

    Koichi Sakuta

    Research Center for Photovoltaics, AIST

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    New Sunshine Project initiated

    New Sunshine Project Completed

    1974

    1980

    1997

    2000

    1993

    Establishment of NEDO

    Residential PV System Technology

    Low Cost SOG-Si Production Process

    Basic Technology for SiliconSolar Cells (wafer, cell-process)

    500 KW Pilot Production- Line for

    mc-Si Solar Cells

    Technology for a-Si Solar Cells Production

    1MW PV Power Plant

    Low Cost mc-Silicon Solar Cells Production Technology

    (Efficiency = 17.2%, 189 JPY/W)

    Thin Film Silicon Solar Cells (140 JPY/W)

    R&D Items

    R&D Results

    Sunshine Project initiated 0

    500

    1000

    1500

    2000

    2500

    3000

    3500

    4000

    19909 1 92 93 94 95 96 97 98 99 0 0 01 02 03 04 05 06 0 7

    Road MapPV2030

    2004

    Progress of PV R&D in Japan

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    World PV Module Production

    (Source: PV News)

    0

    500

    1000

    1500

    2000

    2500

    3000

    3500

    4000

    Producton(MW)

    93 94 95 96 97 98 99 00 01 02 03 04 05 06 07

    Year

    Others

    USA

    Europe

    Japan

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    [PV System Deployment Images] (Examples)

    Industrial

    Residential

    Overseas

    7 Yen/kWh

    23 Yen/kWh

    2002 2007 2010 2020 2030

    14 Yen/kWh

    E

    lectricityCost

    30 Yen/ kWh

    ~50 Yen/kWh

    Bulk Si &Thin Film Si/Compound

    Grid-Connectedwith Higher Degree

    of Autonomy

    >Less-dependent to Grid

    from Individual to Clustered

    ActiveGrid Control

    Cost Reduction by Tech.Generation Change

    Emergence ofNew Material

    Large SystemLong Life BOS

    Very-Thin Cell/Multi-junction

    New Material/ StructureEx.: Dye-sensitized

    Rechargeable BatteryBack up system

    Conventional Grid-Connected

    Community PV- ClusterdBroader Area Clusterd PVRenewable Energy Network

    In-Factory High Voltage-Connected/ Captive Load/Building Integrated PV

    Solar Home System (SHS)Hydrogen Production

    Very Large Scale PV (VLS-PV)

    [PV System Deployment Images] (Examples)

    Industrial

    Residential

    Overseas

    7 Yen/kWh

    23 Yen/kWh

    2002 2007 2010 2020 2030

    14 Yen/kWh

    E

    lectricityCost

    30 Yen/ kWh

    ~50 Yen/kWh

    Bulk Si &Thin Film Si/Compound

    Grid-Connectedwith Higher Degree

    of Autonomy

    >Less-dependent to Grid

    from Individual to Clustered

    ActiveGrid Control

    Cost Reduction by Tech.Generation Change

    Emergence ofNew Material

    Large SystemLong Life BOS

    Very-Thin Cell/Multi-junction

    New Material/ StructureEx.: Dye-sensitized

    Rechargeable BatteryBack up system

    Conventional Grid-Connected

    Community PV- ClusterdBroader Area Clusterd PVRenewable Energy Network

    In-Factory High Voltage-Connected/ Captive Load/Building Integrated PV

    Solar Home System (SHS)Hydrogen Production

    Very Large Scale PV (VLS-PV)

    PV2030 Long-term Roadmap for PV R&D and Introduction

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    Mission and Policy Statement of RCPV(1) R&D for new materials and devices

    Cost reduction, lower environmental impacts(2) Characterization, testing, standardization Infrastructure for industry(3) System operation, evaluation Infra technology for energy source(4) International cooperation Collaboration and competition

    - Rapid technology transfer using integrating platform- Impartial evaluation and advice to policymakers

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    Organization Chart of RCPV

    Advanced Crystalline

    SiliconNovel Silicon

    Materials

    Advanced Organic

    Material

    Thin Film

    Compoundsemiconductor

    Characterization, Testing and System

    Seeds

    Needs

    Infra for Industries

    Strategic

    Industrialization

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    Crystalline Silicon Cells

    Plasma Slicing

    High efficiency thin substrate cells

    Hetero junction cells, Light trapping structure

    HIT

    50 m cell

    Advanced Crystalline Silicon Team

    Thinner Cells < 100m

    Sliced silicon ingot(kerf loss: 120m ditch depth: 8.2mm)

    Sliced silicon ingot(kerf loss: 120m ditch depth: 8.2mm)

    Cell thickness ( m )

    Single -crystalline

    Poly-crystalline150 m 120 m 100 m

    (5X5cm, 2X2cm)

    (2X2cm)

    200 m 100 m

    Commercial cells

    Cell thickness ( m )

    Single -crystalline

    Poly-crystalline150 m 120 m 100 m

    (5X5cm, 2X2cm)

    (2X2cm)

    200 m 100 m

    Commercial cells

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    Amorphous Si

    Microcrystalline Si

    Small absorption coefficient ininfrared region

    Wavelength (nm)

    400 600 800 1000 1200 1400

    QE(a

    .u.) a-Si

    c-Si

    AM1.5G

    p

    n

    i

    p

    n

    ic-Sia-Si

    a-Si:H c-Si:H c-Si1-xGex:H

    i

    p

    nc-Si1-xGe x

    c-Si1-x

    Gex

    Microcrystalline Si1-xGex

    Higher IR response with

    narrower Eg material

    double =12-13% triple = 16%

    Jsc(SiGe) >>30 mA/cm2

    Triple Tandem Solar CellNovel Silicon Materials Team

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    18.1% Wide-gap Cell

    Thin Film Compound Semiconductor Team

    15.9%

    17.7%

    CIGS Cell

    Integrated Sub-module

    Flexible Cell

    10cm x 10cm

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    Polymer Cell (P3HT:PCBM)

    PCE = 3.8 % @ 1cm2

    JSC = 9.68 mA cm-2

    VOC

    = 0.62 V, FF = 0.64

    -1.0 -0.5 0.0 0.5 1.0

    -10

    0

    10

    Currentdensity/mAcm

    -2

    Voltage / V

    LightDark

    S

    S

    S

    S

    C6H13 C6H13

    nC6H13 C6H13

    ITO

    Sub-module and Flexible Cell

    Advanced Organic Material Team

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    Strategic Industrialization Team

    Flexible solar-cell substrates

    consortium

    NIPPON GOHSEI

    FilmsFilms

    MachinesMachines

    ProcessingProcessing

    Observer: Industrial Research Inst of Ishikawa, PV manufacturer

    First Phase: 2006.6.1 - 2008.3.31

    NIPPON GOHSEI

    FilmsFilms

    MachinesMachines

    ProcessingProcessing

    Observer: Industrial Research Inst of Ishikawa, PV manufacturer

    First Phase: 2006.6.1 - 2008.3.31

    Plasma CVD apparatus for thin-filmsilicon solar cells with a substrate size of

    310 mm 410 mm.

    Rapid transfer of basic technologiesPractice of Open Innovation

    Example of Apparatus

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    SR measurements of each cell in a module

    Calibration System for

    Primary Reference Cell

    Accredited for primary reference

    cell calibrations required byISO/IEC17025 in global MRA

    AIST

    AIST

    Long term reliability test of PV modules

    Combined stressesacceleration test

    equipment

    Characterization, Testing and System Team

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    Detection of failure byPassive Diagnostic

    (compare mes. vs calc.)

    Separation of problem( PCS / PV Array )

    Identify failure point and typeby Active Diagnostic

    In case of PV array problem

    0 3 6 9 12 15 18 21 24

    PVBase powerpower demand

    Time [hour]

    Minimum power of coalpower of geothermal

    Base power + PV < Power Demand

    power of hydro

    power of nuclear0.0

    0.1

    0.2

    0.3

    0.4

    0.5

    0.6

    0.7

    0.8

    0.9

    1.0

    1.1

    5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

    Hour

    Irrad

    iance[kW/m2]

    -20

    -10

    0

    10

    20

    30

    40

    50

    60

    70

    80

    90

    PVModuleTemperature[oC]

    OKE, FineDaily Irradiation:

    7.6 [kWh/m2]

    PV Module Temp.*

    43.7 [oC]

    Energy Rating of PV Systems

    Characterization, Testing and System Team

    Estimation of PV Introduction Potential

    Performance Diagnostic of PV Systems

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    Mega-SolarTownMegaMegaMega---SolarTownSolarTownSolarTown

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    Mega-SolarTown: Overview

    Start operation: April 2004

    Total capacity

    DC: 869kWp (approx. 5,600 PV modules) AC: 844kW (211 units of 4kW power conditioner)

    First MW-scale PV in Japan (including existing 150kW PV systems)

    Commercial PV modules / systems showcase Mono-crystalline Si, poly-crystalline Si, amorphous Si and hetero

    junction Si modules

    Aggregation of 4kW residential PV systems

    Power generation:106kWh / year = 0.8% of total demand in the area

    = 300 tons of CO2 reduction / year

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    EfficientLNG-fired plants

    Superconductingpower transmission

    SolarOil LNG Coal Nuclear Power BiomassEfficiency improvement Low carbon Tech

    Efficient coal-firedpower plant

    Advancednuclear power

    Wind

    Powergeneration/

    transmission

    Powergeneration/

    transmission CCS

    InnovativePhotovoltaics

    Suppl

    yside

    Dem

    andside

    Hydrogen production/

    storage/transportPower storage Power electronics

    Cross-sectoral

    Cross-sectoral

    HEMS/BEMS/Regional EMS

    Efficienthouses/bldgs.

    Efficientlighting

    Superheat pumps

    Low energy ITdevices/networks

    Fuel cells for

    residential use

    Residence

    /Building

    Residence

    /Building

    Innovative materials/manufacturing process

    Steel-making process withhydrogen

    IndustryIndustry

    Key Innovative Energy Technologies toward Cool Earth 50

    PHEV/EVITS FCVTransportTransport Biofuel

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    2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014Year

    PV sys.PromotedPractical

    Tech.

    R&D on Innovative Solar Cellsfor 2050)

    Verification of Grid Stabilization

    with Large-scale PV PowerGeneration Systems

    R&D for

    Next Generation PV

    Sys. (target at 2030)

    Advanced Solar Cell Tech.

    (target at 2010)

    Grid-interconnection of clusteredPhotovoltaic Power Generation

    PV Sys. Advanced

    Manufacturing

    Technology

    PV Sys. Adv.

    Practical Tech.

    Grid

    Co

    nnection

    Sho

    rtterm

    pro

    gram

    Innovative PV Tech.

    (target at 2020, 2030)Mid-Long

    term

    program

    Overview of NEDOs PV R&D program

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    Objective:To achieve a photovoltaic power generation with a

    conversion efficiency of more than 40% and an electricitygeneration cost of 7 JPY/kWh or less in around 2050.

    Scheme:

    Three Core Research Centers were selected (July 2008).

    1. RC for Adv. Sci. & Tech., The University of Tokyo

    2. RC for Photovoltaics, AIST

    3. Tokyo Institute of Technology

    Period: FY2008 - FY2014 (7 years)

    Budget: 2.2 billion yen / 14 million euro (FY2008)

    R&D on Innovative Solar Cells(International COE Program)

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    Univ. Tokyo Group: Prof. Y. Nakano

    Post-silicon solar cells for ultra-high efficiencies

    Multi Junction, High concentrator, III-V Compounds, Intermediate Band,Quantum dots, New Concepts, New Materials

    AIST Group: Dr. M. Kondo

    Exploring novel thin multi-junction solar cells with highly-ordered structure Multi Junction, No concentrator, Thin ()c-Si(Ge), CIS, Light Management andTCO, Quantum dots, New Concepts, New Materials

    Tokyo Tech Group: Prof. M. Konagai

    Thin film full spectrum solar cells with low concentration ratios

    Multi Junction, Low concentrator, Thin Films, Light Management and TCO,Quantum dots, New Concepts, New Materials

    R&D on Innovative Solar Cells(FY2008-2014)

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    AIST Group: Dr. M. Kondo

    Exploring novel thin multi-junction solar cells with highly-ordered structure

    Multi Junction, No concentrator, Thin ()c-Si(Ge), CIS, Light Management andTCO, Quantum dots, New Concepts, New Materials

    TargetSolar cells with efficiency over 40% andSolar cells with cost below 7 yen/kWh

    by 2050 with international collaboration.

    TargetOver 25% efficiencies in 2015for Si-based triple-junction and compound-semiconductor-based

    four-junction thin-film solar cells10% efficiencies in 2015

    for single-junction solar cells using new concepts.

    Usefulness of light-management technologies

    will be shown by fabricating solar cells.

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    Smart stack structure

    Mechanicalstack Monolithic(latticematching)

    smartstackstructure 22

    TCO

    Top cell

    middle cell

    bottom cell

    Materials Component cells Stacked cell

    Intermediatesubstrate

    bonding

    bonding

    Back contact

    h> 1.8 eV

    1.8 >h> 1eV

    1 >h> 0.7 eV

    Mechanically

    OpticallyElectrically

    bonded

    TCO

    Top cell

    middle cell

    bottom cell

    Materials Component cells Stacked cell

    Intermediatesubstrate

    bonding

    bonding

    Back contact

    h> 1.8 eV

    1.8 >h> 1eV

    1 >h> 0.7 eV

    Mechanically

    OpticallyElectrically

    bonded

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    CIS-based 4Jcells

    Si-based 3J cells

    Novel conceptsand materials

    Advanced lightmanagement

    Wideand

    narrow-g

    ap

    materials

    Structure of project

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    Scenario for industrializationWafer base c-Si

    Thin film (Si, CIGS, CdTe)

    1stGen.2

    nd

    Gen.3.1 Gen. 3.2 Gen.

    X

    20031954

    B.C.

    2014 2030 2050

    New comers

    Thin filmbase MJ

    Waferbase MJThis project

    Before c-Si

    Feedback to current technology