reliability of power electronic converters for offshore wind … · 2014. 11. 17. · 2l-vcs (one...
TRANSCRIPT
Technology for a better society
Magnar Hernes SINTEF Energy Research
1
A main topic in the research project:
"Power Electronics for Reliable and Energy Efficient Renewable Energy Systems"
Short name: OPE
Duration: 2009-2014
Financing: The Research Council of Norway and three industry partners
Web: www.sintef.no/OPE
Reliability of power electronic converters for offshore wind turbines
Technology for a better society 2
Control strategies for grid connected converters
Topic
Energy efficient electrical conversion and transmission
Topic
Analysis and fault handling of advanced hybrid AC/DC grids
Topic
Reliable power electronics for renewable energy systems
Topic
Scenario analysis
Laboratory experiments & verifications
Reliable and Energy Efficient Renewable Energy Systems
New models for numerical simulation
Topic
Technology for a better society
Tr D
DTr
Tr
DTr
Tr D
DTr
V
W
U
D
2
1
DC-link
2L-VCS = 2-level Voltage Source Converter
3
Power electronics for wind farm power conversion
HVDC HV MV
privat forbruk
B2B-VSC
B2B-VSC
IGBT = Insulated Gate Bipolar Transistor
Technology for a better society
Submodule #1
Submodule #2
Submodule #n
------
[H]
[H]
Submodule #1
Submodule #2
Submodule #n
------
Submodule #1
Submodule #2
Submodule #n
------
[H]
[H]
Submodule #1
Submodule #2
Submodule #n
------
Submodule #1
Submodule #2
Submodule #n
------
[H]
[H]
Submodule #1
Submodule #2
Submodule #n
------
Vdc
Modular Multilevel Converter - MMC
4
Converter topologies for MV and HV applications
Tr D
DTr
Vdc_Sub
IGBT_1
IGBT_2
Tr D
DTr
Tr
DTr
Tr D
DTr
V
W
U
D
2
1
DC-link
Tr D
DTr
2
1
U phaseVdc
2L-VCS (one phase-leg)
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Series connection of IGBTs
Tr
Tr
D
D
D
2
Vdc/2
U phase
Tr
Tr
D
D
DVdc/2
1
Neutralpoint
3L-VCS (one phase-leg)
Due to voltage limitation of single IGBTs, MV and HV converters need more complex topologies and/ or series connection of IGBTs
Test objects for reliability
investigations
Technology for a better society
Reliability of power semiconductors - Failure modes
• Spontaneous failures due to overloads – Related to power semiconductor chips
– Thermal overload and overvoltage
– Exceeding V/I safe operating area for the device
• Failures triggered by external environment – E.g. intrusion of humidity
– E.g. cosmic radiation
• Failures due to aging or exhaustion – Mechanical and electrical termination of
the chips
– Packaging and encapsulation
5
Woff = ∫ Poff (t)dt
Poff (t) = v(t) x i(t)
Transistor current i(t) Transistor voltage v(t)
Several MW on a few square centimetre chip
Typical turn-off behaviour for a controllable power semiconductor
• Mostly chip related: – Spontaneous failures – Cosmic radiation
• Mostly related to packaging – Ageing or exhaustion – Intrusion of humidity in chip insulation
Project focus
Technology for a better society
IGBT packaging
• Mainly two technologies – Planar bonded modules
– Press-pack housing
• Both can contain both IGBT chips and antiparallel free-wheeling diodes
6
• A 750A/ 6500V IGBT module from Infineon
• An 1800A/ 4500V press-pack IGBT from Westcode
Technology for a better society
Planar bonded IGBT modules • Main failure mechanisms:
– Bond wire lift off
– Solder layer disconnect
• Thorough investigations and publications of failure mechanisms and reliability
• Failure mode Failure to break
7
chip Cu
Ceramic
Cu base plate
Heat sink
Weak point: Chip solder
Weak point: Bond connection
Bond wire
Weak point: Solder connection to base plate
Direct Bonded Copper - DBC Cu
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Consequence:
Valve failure
Converter failure
Technology for a better society
Life time curves – no of cycles to failure
• ∆T • Tmax
• dT/dt • ton
• ILoad
• control strategy • and more….
Experience data from modules: Lifetime dependent on:
Technology for a better society
Press-pack IGBTs
9
• Failure mechanisms: – Limited knowledge
• Few publications on failure mechanisms and reliability
• Failure mode Expected failure to short
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Tr D
Consequence:
Valve still functional
Reduced voltage margins to failure
Technology for a better society
Main focus on reliability of press-pack IGBTs in the OPE project
• The OPE project prioritized reliability of press pack devices for the following reasons: – Limited published information regarding failure mechanisms and power cycling life time
– Press-pack devices are very relevant in medium voltage wind power applications due to series connection capabilities (fail-to short-circuit)
– Special power cycling stress condition for wind power converters (wind fluctuations, low motor side frequency etc.)
• Then we need to know: – Load profiles for the application, e.g. power cycling due to wind fluctuations
– Stress levels related to grid side and generator side load conditions (power frequency, cos ϕ etc.)
– Stress levels related to the converter power circuit and controls (topology, switching frequency etc)
• Theoretical work
• Experimental work
10
Technology for a better society 11
GEN GRID
3L NPC VSC 3L NPC VSC
• DC link voltage ~ 5 kV
• 3.3 kVac (LL voltage)
• Switching frequency ~ 1500 Hz +/-
• 5 MVA (connected to a 3.6 MW wind turbine gen.)
• IGBT: Press-pack1800 A/4500 V
Case study: A medium voltage PWM 3L-NPC VSC for 3.3 kV AC
Technology for a better society 12
Test Cell for mapping switching characteristics of HV IGBTs
• Present Test Cell with 0-5 kV DC-link
• Planned to be extended to 10kV
• "Double-pulse" waveform for measuring IGT turn-on and turn off waveform
• External liquid (silicon oil) heating/cooling circuit for temperature control (5- 50 oC)
V IGBT
I IGBT
V FWD
I FWD
Measuring Turn ON / OFF
time
time
time
time
1 sec
max ~ 160 usec
1 sec
Technology for a better society
Turn-off waveforms with DC-link 2800V and turn-off current 1800A
13
Test object: 1800A/4500V press-pack IGBT
~3500V
~1800A
~6MW
Psw_off =7Joule x 1000Hz =7kW
Ptotal=Psw_off+Psw_on+Pcond
Technology for a better society 14
Power Cycling Tester for life-time testing of high-power IGBTs (2000 A)
Project investment of ~1MNOK. Developed in cooperation with Chemnitz University of Technology
Technology for a better society
Operation of the Power Cycling Tester
15
a1: Measure VCE cold a2: Measure Tcase cold
Temperaturestime
time
Tvj,max
Tvj,minTcase,min
Tcase,max
∆Tvj
Current through IGBT
Tvj
Tcase
Iload0-2000A
Load current on (heating period)
da
bc
ton toff
1 cycle
Load current off (cooling period)
b1: Measure VCE warm b2: Measure Tcase warm
c1: Measure VCE warm Estimate Tvj,warm
d1: Measure VCE cold Estimate Tvj,cold
1-4 IGBT test pairs Bypass leg
Cur
rent
Sou
rce
I LOAD
0
-200
0AV L
OAD
0
-20V
Technology for a better society
OPE Power Cycling Tester – Control screen
Continuously sensed parameters Stored parameters of the last cycle
Trend analysis of the stored parameters
Technology for a better society
Plot from measurement of planar bonded modules
Indicating fatigue of chip solder
Indicating bond wire lift off
From Chemnitz University of Technology
Technology for a better society 18
Power Cycling Tester with 4x modules + 4x press packs
Technology for a better society 19
Modelling press-pack IGBT for stress analysis Work by PhD student Tilo Poller at Chemnitz University of Technology
Technology for a better society
Simulation model of (PSCAD) of PWM Voltage Source Converter
20
g_Rp
g_Rm
g_Sp
g_Sm
g_Tp
g_Tm
g_Sp
g_Tp
g_Tm
g_Sm
g_Rp
I_T
I_S
I_T
I_S
0.0014
0.0014
I_R
I_S
I_T0.0014
VT
*1E3
DC-link Active front end PWM converter
VR
Load / Source
g_Rm
123
Scale factor (from kA to per unit (pu))(1.0 pu = 28 A = 0.028kA)Note: Peak values !
0.053
0.053
A
B
C
A
B
C
66.0
I_mains_R
I_mains_S
I_mains_T
2T3
2T6
2T5
2T2
D3 D5
D4 D6 D2
I_mains_T
I_C
_R
I_C
_T
*
I_DC
V_DC
V_DC
V_DC
I_DC *1E3
P_DC
66.0
I_C_R
66.0
0.00
1
0.00
1
I_DC
I_R
I_PWM
I_PWM
I_PWM
ConverterDC_ref (kV)
0.1
0.9
0.45
I_react (pu)
-1
1
0
PWM controlOFF ON
1
IR Fund. rms
A rms0 0.04
0
VST
VRS
VRS
VTR
Pow
er AB
PQ
*2.5
I_R
Fault detectionShort cir. PWM
0 1
0
Power flowP
kW-10 10
-10
Q
kW-10 10
-10
MainsMains Volt
0.2
0.3
0.23
Frequency
40
60
50
Phase
-360
360
0
*25.2
*25.2
*25.2
2T4
VS
VT
LoadLoad (kA)
-0.05
0.05
0.001
V_DC
0 1
0
P_DC
-20 20
-20
0.053
Active front end converterWed Dec 12 09:13:34 2001
ny_frontend_11FileDir J:\DOK\12\MO\Prosjekt\Sip 12X127\EMTDC\Frontend
2T1 D1
Short cir. PWM
I_R
0.0
0.0
| X |*1E3
Power calculation
0.02
0.02
6600
.066
00.0
V_DC_PVR
Short circuit detection
V_DC_P
0.0
0.0
0.00
1
VS
I_mains_S0.05
A
B
C
VFPh
0.0003
0.0003
0.0003
0.0003
0.0003
0.0003
VCC
_R
VCC
_S
VCC
_T
Filter Point of common connection
FFT-analysis
Result to fileWrite
-- Trigg
0
Store resultsOFF ON
0
V_R_0 V_R_G
V_DC
V_DC_N
V_R_G
V_R_0
Save result to file forMatlab analysis
V_R_0
V_R_G I_R
VCC_R
VRS
I_mains_R
I_mains_R
VR
In5
fileWrite Store
resulttrigger trigger
In4
In3
In2
In1
resultto file
In7
In6
lagreres.f
*2.5
VTR
VST
VRS
123
Scale factor (from kV to per unit (pu))(1.0 pu = 400 V DC = 0.4kV)
Scale factor (from kV to per unit (pu))(1.0 pu = 230 V AC = 0.23kV)Note: Peak values
DCVoltage
Controller
I_ampVDC_ref
VDC_mea Generation of
I_ref
I_act
I_react
Theta
curr. references Current V_refI_ref
I_mea
Controller
g_Rp
g_Rm
g_Sp
g_Sm
g_Tp
g_Tm
On
PWM
V_ref
I_C
_S
Power Grid
FFT
In1
In2
In3
In4
In5
Plot
*3.074
*3.074
*3.074 Phase
loop (PLL)
VAC_mea Thetalocked
Technology for a better society 21
25 °C
125 °C
Curves or measurements
XDATA: x1 x2
YDATA: y1 y2 y3
ZDATA: x1y1 x1y2 x1y3 x1y1 x1y2 x1y3
ENDFILE:
Input file with loss data
Simulations
IGBT loss calculator in PSCAD with thermal network add-on
Technology for a better society
Simulated load dependent swings of IGBT hotspot temperature
22
Motive:
• Combine laboratory measurements with numerical simulations to estimate efficiency and lifetime of power semiconductors
Simulated temperature swings affected by:
• Switching frequency
• Line-side and generator side power frequency, cos ϕ etc,
• Filter ripple current
• Wind fluctuations
• ..and more
Technology for a better society
Methodology for power cycling lifetime estimation
Step#1: Temperature determination Step#3: Lifetime prediction according
Miner’s rule
Step#2: Cycle counting
Possibility 1calculation
Possibility 2measurement
Tvj(t)
Minima and Maxima extraction
Input data:e.g.: P(t), Q(t),
wind speed
Ciruit simulationLosses model
Thermal model Rainflow counting algorithm
Linear composition
Nf curves
Residual lifetimexy%
Wind profile
Lifetime characteristics
Example: If not oversized lifetime for the generator side diode can be very short!
Technology for a better society
• Completion of the reliability work in the OPE project (deadline 30th June 2014)
• Continue power cycling of IGBTs
• Press-packs and modules
• Power Cycling of single chips (master student work)
• Post processing of result
• Final reporting and publications
• Develop a new research project for continuation of converter reliability topics
• Together with colleagues at Chemnitz University of Technology
• Start-up spring 2015
• Exploit results and ideas from OPE
• Address VSC converter applications for HV collecting and transmission systems
• Power cycling capabilities assuming various converter topologies and AC/DC systems
• New methods for condition monitoring, predicting rest life-time etc.
24
Planned continuing activities on converter reliability
Technology for a better society 25
Thank you for your attention !