research article design and simulated characteristics...

Research ArticleDesign and Simulated Characteristics of Nanosized InSb BasedHeterostructure Devices

T D Subash1 T Gnanasekaran2 C Divya3 and J Jagannathan4

1 Department of ECE Annai Vailankanni College of Engineering Tamil nadu India2Department of IT RMK College of Engineering and Technology Chennai India3 Centre for Information Technology and Engineering Manonmaniam Sundaranar University Tirunelveli India4Department of ECE Shri Sapthagiri Institute of Technology Vellore India

Correspondence should be addressed to T D Subash tdsubash2007gmailcom

Received 27 June 2014 Revised 10 August 2014 Accepted 11 August 2014 Published 8 September 2014

Academic Editor George Z Kyzas

Copyright copy 2014 T D Subash et al This is an open access article distributed under the Creative Commons Attribution Licensewhich permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited

Indium antimonide nanoparticles were synthesized at room temperature X-ray diffraction measurements are utilized tocharacterize the nanocompositesThe InSb nanoparticle has an average particle size in a range of 47mm to 99mmwhich is observedusing the XRD result The InSb is a material which is used to design the transistor For designing purpose the simulator TCAD isused by which the HEMT device is structured and its performance is analyzed and it is found that transistor operates as normaldevices This designed device is more valuable since a nanocomposite InSb material is used as a channel in HEMT device therebyleading to the nanosized HEMT device In addition InSb has the property of high saturation velocity and mobility which resultsin higher performance of the device than any other materials in III-V compounds

1 Introduction

For the last 30 years Moorersquos law has been a guidingprinciple for the semiconductor industry Sustaining Moorersquoslaw requires continuous scaling of Si MOSFETsThe physicalgate length of Si-transistors that are utilized in the current65-nm node is about 30 nm [1ndash5] It is expected that thiscritical dimension will reach about 10 nm in 2015 While amatter of considerable debate it is widely believed that thisis the ultimate limit of CMOS scaling With this prospectidentifying a new semiconductor logic device technologythat can sustain Moorersquos law for a few additional generationsis becoming increasingly pressing [6ndash15] Often mentionedcandidates are carbon-nanotube transistors semiconductornanowires and further out spintronics However thesedevice concepts are hardly outside the prototyping stageThe binary compound semiconductors AlSb GaSb InSband InAs along with their related alloys are candidates forhigh-speed low-power electronic devices [16] Applicationscould include high-speed analog and digital systems usedfor data processing communications imaging and sensingparticularly in portable equipment such as hand held devices

and satellites [17] The development of InSb based transistorfor use in low-noise high-frequency amplifiers digital cir-cuits and mixed signal circuits could provide the enablingtechnology needed to address these rapidly expandingneeds

The first HEMT were fabricated with GaAs channelsand AlGaAs barriers [18] These devices are also known asmodulation doped field effect transistor (MODFET) In orderto achieve higher electron mobility and velocity indium wasadded to the channel In order to improve further additionalindium was added to the channel and the barrier materialwas changed to InAlAs The logical progression of thistrend is to use pure InAs as channel along with the nearlylattice-matched Alsb and AlGaSb for the confining layers asarsenidersquos are not suitable barriers For the past 20 years ithas demonstrated the best high frequency performance ofany transistor technology as measured by cutoff frequencyCurrent world record is 562GHZ and InGaAs HEMTmanu-facturing technology is matured

This paper deals with the preparation procedure ofindium antimonide nanoparticle in lab The characteristicsof the prepared nanoparticle are analyzedThe HEMT device

Hindawi Publishing CorporationAdvances in Materials Science and EngineeringVolume 2014 Article ID 196732 5 pageshttpdxdoiorg1011552014196732

2 Advances in Materials Science and Engineering

is designed using TCAD software by using nanosized InSbparticle as channel The characteristics of nanoparticle areobserved using XRD image and the performance of transistoris analyzed using simulatorThis is dealt in the section ldquoresultand discussionrdquo

2 Experimental Procedure ofIndium Antimonide

One hundred and fifty millilitres of polyethylene glycolshould be taken in a beaker Dissolve stoichiometric amountof indium trichloride (InCl

3) and antimony trichloride

(SbCl3) in polyethylene glycol at room temperature Zinc

powder was gradually added to the solution Leave thesolution to be stirred for about 2-3 hoursThe process shouldbe continued till InSb was precipitated and turned it into greycolour Keep the solution to be stirred well for half an hourand then it must be aged in the mother liquor for a day ata temperature of 25∘C After completion of this period theprecipitate was centrifuged and washed several times withdistilled water The precipitate was dried in hot oven at 120∘Cfor an hour and kept in water bath for 2 hours The resultantparticle is grinded well to obtain fine indium antimonidenanoparticle

The chemical reactions are as follows

InCl3+ SbCl

3+ Zn 997888rarr InSb + ZnCl

2 (1)

3 Design of HEMT Device

The cross-sectional schematic view of our InSb HEMTs isshown in Figure 1 The layer structure was grown on semi-insulating GaAs substrates followed by 300-nmAl

052In048

Sbbuffer layer 5 nm of InSb channel 1-nm GaAs barrier layerand a 20-nm InSb cap layer All the layers were designed tobe undoped except for the top InSb layer which is a heavilydoped N+ layer intended for the source and drain regionsof the HEMT Mobility of electrons (78000 cm2(Vlowasts)) in2DEG for InSb is higher than Silicon Mobility was improvedwith a slight increase of 2DEG Thickness of the barrierlayer affects 2DEG concentration and vertical gate field whichcontrols gate leakage current and breakdown and can alsoaffect device degradationTheohmic contact of titaniumgoldis developed as source and drain NiAu is used as gatelayer

The prepared InSb nanoparticle is used as a channel in thetransistor The transistor is designed using TCAD softwareand analysed the performance In our novel research workthe synthesis of InSb nanoparticle is highlighted in previoussession since this is used as a layer for designing heterostruc-ture devices InSb is an III-V compoundmaterial InSb is usedin the channel since it is a narrow-gap semiconductor withan energy band gap of 017 eV at 300K and 023 eV at 80KThere will be a strong carrier confinement in the channelat the heterointerface It reduces off-state leakage currentDegradation of mobility decreases due to the interface statesas layers are lattice matched The most important property of

GateNiAu

SourceTiAu

DrainTiAu

N + InSb N + InSb

1nm GaAs barrier

5nm InSb channel

300nm Al052 In048 Sb buffer

Si-GaAs substrate

Figure 1 Cross-sectional schematic view of InSbAlInSb HEMTs

thematerial is high saturation velocity which results in higheroperating frequency

31 Current-Voltage Noise Figure and Temperature Charac-teristics Analysis The saturation current (119868on) is the draincurrent at 119881ds = 119881gs = 1V The leakage current (119868off ) is thedrain current at 119881gs-0V and 119881ds-1V The transconductance(119892119898) is extracted from the slop of 119868

119889-119881gs at119881gs = 119881ds = 1 V119881th

is the threshold voltage of the HEMT given by

119881th = 120593119887

eff minus Δ119864119888minus

1199021198731199041198731198602

2119904

minus 120590

119873119860

119904

119868ds =119885120583120573119890

119871

(119881gs minus 119881th minus119881ds2

)119881ds

(2)

where 120593119887eff is Schottky gate effective barrier height of the Δ119864119888is the discontinuity of the conduction band at the interfacebetween the UID-InSb and the AlInSb layers

11990211987311990411987311986022119904 is the doping concentration in 119899-AlInSb layer

and 120590 is the polarization induced charge density at theinterface

The minimum noise figure (NFmin) and the minimumnoise temperature (119879min) are then defined as

NFmin = 1 + 2119892119899[Re (119885

119888) + Re (119877sopt + 119895119883sopt)]

119879min = 21198790119892119899[Re (119885

119888) + Re (119877sopt)]

(3)

Advances in Materials Science and Engineering 3

300

250

200

150

100

50

0

Inte

nsity

(au

)

10 20 30 40 50 60 70 80

2120579 (deg)

Figure 2 XRD pattern of InSb sample

4 Results and Discussion

41 Characterization of Powder The samples of Insb weresynthesized to investigate the crystalline phase Figure 2shows the XRD result The samples were scanned in 2120579 rangefrom 0∘ to 180∘ The size of InSb was estimated by the peaksof XRD image With the help of peaks the size of the crystalwas calculated

The standard Scherrer equation is used to find the particlesize The equation is given as

119879 = (

094120582

12057312

cos 120579) (4)

The wavelength is lamda = 0154060 nm 120579 is the peakposition and 120573 is the full peak width at half of the maximumintensity Using this the particle size is found to be in therange of 47 nm to 99 nm

42 Transistor Characteristics The 119868-119881 characteristics of thedevice is simulated by keeping gate voltage as constant for119881ds = 0 to 10V and 0ndash20V as shown in Figures 3 and 4This isperformed to study the switching characteristics of transistorWhen 119881

119892= 19V knee voltage is 58 V Thus 119868off state will be

switched into 119868on state and vice versa This replicates that thedevice works as normal transistor

Figures 5 and 6 show the saturation current and leakagecurrent as a function of gate voltage As gate voltage increasessaturation current increases although leakage current alsoincreases This is mainly due to the threshold voltage

For low drain source voltage values that is 0-1 V in thechannel region the gate bias induces an accumulation ofelectrons This causes a reduced channel resistance Hencethe channel width is decreased which in turn increases theelectric field across the channel junction

From Figure 7 it is observed that for low values of gatevoltage minimum noise figure (NFmin) is higher for highervalue of noise temperature constant (120575) This occurs due tohigher value of drain noise current and gate noise currentfor higher values of 120575 which in turn lead to higher values of

006

005

004

003

002

001

Dra

in cu

rren

t -I d

s(m

A)

Vg = 36V

Vg = 38VVg = 2V

00

1 2 3 4 5 6 7 8 9 10

Drain voltage-Vds (V)

Figure 3 Simulated HEMT output characteristics (119881ds versus 119868ds)for 119881ds between 0V and 10V and various 119881

119892

003

0025

002

0015

001

0005

Dra

in cu

rren

t -I d

s(m

A)

Vg = 3V

Vg = 5V

Vg = 2V

00

2 4 6 8 10 12 14 16 18 20



119892

1

09

08

07

06

05

04

03

02

01

0

Dra

in cu

rren

t -I d

s(A

120583m

)

minus2 minus15 minus1 minus05 0 05 1 15 2

Gate voltage-Vg (V)

times10minus3

Figure 5 Variation of 119868on for HEMT at fixed channel length


14

12

1

08

06

04

02

0

Dra

in cu

rren

t -I d

s(A

120583m

)


Gate voltage-Vg (V)

times10minus3

Figure 6 Variation of 119868off for HEMT at fixed channel length

25

2

15

1

Min

imum

noi

se fi

gure

-NF m

in(d

B)

minus08 minus07 minus06 minus05 minus04 minus03 minus02 minus01 0

Gate voltage-Vg (V)

Figure 7 Minimum noise figure versus gate voltage

119875 119877 and 119862 noise coefficients However for higher values ofgate voltage increasing 120575 leads to decrease in the gate noisecurrent and hence decrease in the gate noise coefficient (119877)Due to this NFmin is observed to decrease with increase in 120575

at higher drain currentThe impact of noise temperature constant (120575) and diffu-

sion coefficient (119863) on minimum noise temperature (119879min)is illustrated in Figure 8 From the figure it is observed that119879min increases with increase in 120575 at low values of gate voltageThis is attributed to higher value of thermal noise induceddrain noise current and gate noise current which lead tohigher value of 119875 119877 and 119862 noise coefficients This in turnresults in higherNFmin andhence higher119879minwith increase innoise temperature constant (120575) at low values of drain currentHowever at higher values of drain current119879min is observed todecrease with increase in 120575which is attributed to the decreasein gate noise current which results in lower value of 119877

5 Conclusion

In this paper nanocrystalline indium antimonide power of47ndash99 nm is synthesized by chemical process The obtained

550

500

450

400

350

300

250

200

Min

imum

noi

se te

mpe

ratu

re-T

min

(K)


Gate voltage-Vg (V)

Figure 8 Minimum noise temperature versus gate voltage

nanoparticle is in the range of 47 to 99 nm which is analysedusing XRD This particle is used as a channel in transistordesign The transistor is designed using TCAD The scope ofthis nanoparticle is in the design ofHEMTdevice to limit gatevoltage leakage current and short channel effects

Conflict of Interests

The authors declare that there is no conflict of interestsregarding the publication of this paper

References

[1] G Ira and V Mehrotra ldquoSynthesis of magnetic dielectric orphosphorescent NANO compositesrdquo US Patent 74318622008

[2] T Chiang ldquoA novel short-channel model for threshold voltageof trigate MOSFETs with localized trapped chargesrdquo IEEETransactions on Device and Materials Reliability vol 12 no 2pp 311ndash316 2012

[3] R J Baker CMOS Circuit Design Layout and SimulationWiley-IEEE 3rd edition 2010

[4] W S Lau L Zhong A Lee et al ldquoDetection of defect statesresponsible for leakage current in ultrathin tantalum pentoxide(Ta2O5) films by zero-bias thermally stimulated current spec-

troscopyrdquo Applied Physics Letters vol 71 no 4 pp 500ndash5021997

[5] K Roy and K S Yeo Low Voltage Low Power VLSI SubsystemsMcGraw-Hill Professional 2004

[6] K Ko J Seo D Kim et al ldquoThe growth of a low defectInAs HEMT structure on Si by using an AlGaSb buffer layercontaining InSb quantum dots for dislocation terminationrdquoNanotechnology vol 20 no 22 Article ID 225201 2009

[7] H Uchiyama T Taniguchi and M Kudo ldquoSuppression ofplasma-induced fluorine damage in P-HEMTs using strainedInSb barrierrdquo IEICE Electronics Express vol 1 no 16 pp 513ndash517 2004

[8] K Takei S Chuang H Fang et al ldquoBenchmarking the per-formance of ultrathin body InAs-on-insulator transistors as afunction of body thicknessrdquo Applied Physics Letters vol 99 no10 Article ID 103507 2011


[9] S T Myers J E Baker A C S Readhead E M Leitch and THerbig ldquoMeasurements of the sunyaev-zeldovich effect in thenearby clusters A478 A2142 and A2256rdquo Astrophysical JournalLetters vol 485 no 1 pp 1ndash21 1997

[10] M Levinshtein M S Michael and S Rumyanstev HandbookSeries on Semiconductor Parameters vol 2 World ScientificSingapore 1996

[11] CHilsum ldquoSimple empirical relationship betweenmobility andcarrier concentrationrdquo Electronics Letters vol 10 no 13 pp259ndash260 1974

[12] S Liu Z Dai H Chen and H Ju ldquoImmobilization of hemo-globin on zirconium dioxide nanoparticles for preparation of anovel hydrogen peroxide biosensorrdquoBiosensors and Bioelectron-ics vol 19 no 9 pp 963ndash969 2004

[13] H Zhou R Tian M Ye et al ldquoHighly specific enrichmentof phosphopeptides by zirconium dioxide nanoparticles forphosphoproteome analysisrdquo Electrophoresis vol 28 no 13 pp2201ndash2215 2007

[14] K Kumar and S Jabaraj ldquoNand gate using FinFET for nanoscaletechnologyrdquo Journal of Engineering Science and Technology vol2 no 5 pp 1351ndash1358 2010

[15] J Conde A Cerdeira M Pavanello V Kilchytska and DFlandre ldquo3D simulation of triple-gate MOSFETs with differentmobility regionsrdquoMicroelectronic Engineering vol 88 no 7 pp1633ndash1636 2011

[16] C S S R Kumar M Aghasyan H Modrow et al ldquoSynthesisand characterization of S-Au interaction in gold nanoparticlebound polymeric beadsrdquo Journal of Nanoparticle Research vol6 no 4 pp 369ndash376 2004

[17] D-H Kim and J A del Alamo ldquoBeyondCMOS logic suitabilityof In07Ga03As HEMTrdquo in Proceedings of the International Con-

ference on Compound SemiconductorManufacturing Technology(CS MANTECH rsquo06) pp 251ndash254 Vancouver BC CanadaApril 2006

[18] D-H Kim J A del Alamo J-H Lee and K-S Seo ldquoPerfor-mance evaluation of 50 nm Insub 07Gasub 03As HEMTsfor beyond-CMOS logic applicationsrdquo in Proceedings of theIEEE International Electron Devices Meeting (IEDM rsquo05) pp767ndash770 Washington DC USA 2005

Submit your manuscripts athttpwwwhindawicom

ScientificaHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

CorrosionInternational Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Polymer ScienceInternational Journal of



CeramicsJournal of


CompositesJournal of

NanoparticlesJournal of



International Journal of

Biomaterials


NanoscienceJournal of

TextilesHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Journal of

NanotechnologyHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Journal of

CrystallographyJournal of


The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014


CoatingsJournal of

Advances in

Materials Science and EngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Smart Materials Research



MetallurgyJournal of


BioMed Research International

MaterialsJournal of


Nano

materials


Journal ofNanomaterials


is designed using TCAD software by using nanosized InSbparticle as channel The characteristics of nanoparticle areobserved using XRD image and the performance of transistoris analyzed using simulatorThis is dealt in the section ldquoresultand discussionrdquo

2 Experimental Procedure ofIndium Antimonide

One hundred and fifty millilitres of polyethylene glycolshould be taken in a beaker Dissolve stoichiometric amountof indium trichloride (InCl

3) and antimony trichloride

(SbCl3) in polyethylene glycol at room temperature Zinc

powder was gradually added to the solution Leave thesolution to be stirred for about 2-3 hoursThe process shouldbe continued till InSb was precipitated and turned it into greycolour Keep the solution to be stirred well for half an hourand then it must be aged in the mother liquor for a day ata temperature of 25∘C After completion of this period theprecipitate was centrifuged and washed several times withdistilled water The precipitate was dried in hot oven at 120∘Cfor an hour and kept in water bath for 2 hours The resultantparticle is grinded well to obtain fine indium antimonidenanoparticle

The chemical reactions are as follows

InCl3+ SbCl

3+ Zn 997888rarr InSb + ZnCl

2 (1)

3 Design of HEMT Device

The cross-sectional schematic view of our InSb HEMTs isshown in Figure 1 The layer structure was grown on semi-insulating GaAs substrates followed by 300-nmAl

052In048

Sbbuffer layer 5 nm of InSb channel 1-nm GaAs barrier layerand a 20-nm InSb cap layer All the layers were designed tobe undoped except for the top InSb layer which is a heavilydoped N+ layer intended for the source and drain regionsof the HEMT Mobility of electrons (78000 cm2(Vlowasts)) in2DEG for InSb is higher than Silicon Mobility was improvedwith a slight increase of 2DEG Thickness of the barrierlayer affects 2DEG concentration and vertical gate field whichcontrols gate leakage current and breakdown and can alsoaffect device degradationTheohmic contact of titaniumgoldis developed as source and drain NiAu is used as gatelayer

The prepared InSb nanoparticle is used as a channel in thetransistor The transistor is designed using TCAD softwareand analysed the performance In our novel research workthe synthesis of InSb nanoparticle is highlighted in previoussession since this is used as a layer for designing heterostruc-ture devices InSb is an III-V compoundmaterial InSb is usedin the channel since it is a narrow-gap semiconductor withan energy band gap of 017 eV at 300K and 023 eV at 80KThere will be a strong carrier confinement in the channelat the heterointerface It reduces off-state leakage currentDegradation of mobility decreases due to the interface statesas layers are lattice matched The most important property of

GateNiAu

SourceTiAu

DrainTiAu

N + InSb N + InSb

1nm GaAs barrier

5nm InSb channel

300nm Al052 In048 Sb buffer

Si-GaAs substrate

Figure 1 Cross-sectional schematic view of InSbAlInSb HEMTs

thematerial is high saturation velocity which results in higheroperating frequency

31 Current-Voltage Noise Figure and Temperature Charac-teristics Analysis The saturation current (119868on) is the draincurrent at 119881ds = 119881gs = 1V The leakage current (119868off ) is thedrain current at 119881gs-0V and 119881ds-1V The transconductance(119892119898) is extracted from the slop of 119868

119889-119881gs at119881gs = 119881ds = 1 V119881th

is the threshold voltage of the HEMT given by

119881th = 120593119887

eff minus Δ119864119888minus

1199021198731199041198731198602

2119904

minus 120590

119873119860

119904

119868ds =119885120583120573119890

119871

(119881gs minus 119881th minus119881ds2

)119881ds

(2)

where 120593119887eff is Schottky gate effective barrier height of the Δ119864119888is the discontinuity of the conduction band at the interfacebetween the UID-InSb and the AlInSb layers

11990211987311990411987311986022119904 is the doping concentration in 119899-AlInSb layer

and 120590 is the polarization induced charge density at theinterface

The minimum noise figure (NFmin) and the minimumnoise temperature (119879min) are then defined as

NFmin = 1 + 2119892119899[Re (119885

119888) + Re (119877sopt + 119895119883sopt)]

119879min = 21198790119892119899[Re (119885

119888) + Re (119877sopt)]

(3)


300

250

200

150

100

50

0

Inte

nsity

(au

)

10 20 30 40 50 60 70 80

2120579 (deg)





119879 = (

094120582

12057312

cos 120579) (4)








006

005

004

003

002

001

Dra

in cu

rren

t -I d

s(m

A)

Vg = 36V

Vg = 38VVg = 2V

00

1 2 3 4 5 6 7 8 9 10



119892

003

0025

002

0015

001

0005

Dra

in cu

rren

t -I d

s(m

A)

Vg = 3V

Vg = 5V

Vg = 2V

00

2 4 6 8 10 12 14 16 18 20



119892

1

09

08

07

06

05

04

03

02

01

0

Dra

in cu

rren

t -I d

s(A

120583m

)


Gate voltage-Vg (V)

times10minus3



14

12

1

08

06

04

02

0

Dra

in cu

rren

t -I d

s(A

120583m

)


Gate voltage-Vg (V)

times10minus3


25

2

15

1

Min

imum

noi

se fi

gure

-NF m

in(d

B)


Gate voltage-Vg (V)





5 Conclusion


550

500

450

400

350

300

250

200

Min

imum

noi

se te

mpe

ratu

re-T

min

(K)


Gate voltage-Vg (V)





References





























CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




300

250

200

150

100

50

0

Inte

nsity

(au

)

10 20 30 40 50 60 70 80

2120579 (deg)





119879 = (

094120582

12057312

cos 120579) (4)








006

005

004

003

002

001

Dra

in cu

rren

t -I d

s(m

A)

Vg = 36V

Vg = 38VVg = 2V

00

1 2 3 4 5 6 7 8 9 10



119892

003

0025

002

0015

001

0005

Dra

in cu

rren

t -I d

s(m

A)

Vg = 3V

Vg = 5V

Vg = 2V

00

2 4 6 8 10 12 14 16 18 20



119892

1

09

08

07

06

05

04

03

02

01

0

Dra

in cu

rren

t -I d

s(A

120583m

)


Gate voltage-Vg (V)

times10minus3



14

12

1

08

06

04

02

0

Dra

in cu

rren

t -I d

s(A

120583m

)


Gate voltage-Vg (V)

times10minus3


25

2

15

1

Min

imum

noi

se fi

gure

-NF m

in(d

B)


Gate voltage-Vg (V)





5 Conclusion


550

500

450

400

350

300

250

200

Min

imum

noi

se te

mpe

ratu

re-T

min

(K)


Gate voltage-Vg (V)





References





























CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




14

12

1

08

06

04

02

0

Dra

in cu

rren

t -I d

s(A

120583m

)


Gate voltage-Vg (V)

times10minus3


25

2

15

1

Min

imum

noi

se fi

gure

-NF m

in(d

B)


Gate voltage-Vg (V)





5 Conclusion


550

500

450

400

350

300

250

200

Min

imum

noi

se te

mpe

ratu

re-T

min

(K)


Gate voltage-Vg (V)





References





























CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials






















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials



research article design and simulated characteristics...

Documents