revision of a high-power curve tracer for pulsed iv ... · effect. therefore, a new prototype was...
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Revision of a High-Power Curve Tracer for Pulsed IVMeasurements of Power Semiconductor Devices
Semester Thesis (HS 2019)
Fig. 1: APS Curve tracer prototype used for high-current pulsed IV characterization of SiC power MOSFETs.
Introduction
The current-voltage (IV) characteristics of Power MOSFETs are typically measured by pulsed IV measure-ments using commercial parametric curve tracers (PCTs). During such a pulsed measurement it is importantto limit self-heating of the device under test (DUTS), which would significantly distort the measurement result.Yet, due to the limited functionality of commercial PCT systems it is often not possible to limit the self-heatingeffect. Therefore, a new prototype was developed to perform high-power pulsed IV measurements, which isdepicted in Fig. 1.
Scope of the Thesis
The aim of this semester thesis is to revise and test an existing high-power curve tracer prototype, whichallows the characterization of SiC power semiconductor devices up to their safe operating limit. In addition,an already existing Matlab interface is to be extended to allow fully automated measurements.The work to be performed in the scope of this thesis can be divided in the following topics:
• Testing of the existing prototype (20 %).
• Revision and redesign (20 %).
• Programming of the control interface (50 %).
• Assembly and testing of the curve tracer in the APS laboratory (10 %).
Contact For more details please contact:
Supervisors: Roger Stark [email protected] ETL F 24.1
Professor: Prof. Dr. U. Grossner [email protected] ETL F 28