rf bipolar small signal transistor rf fet small signal transistor … · 2011. 6. 8. · bf494 npn...
TRANSCRIPT
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Component DatabaseComponents for CB-Radios and transmitter/receiver equipment
RF Bipolar Small Signal Transistor
RF FET Small Signal Transistor
RF Power Transistor
Shortform Transistor Catalogue
Integrated Circuits
Variable capacitance diode
Albrecht Radio Equipment
Scanner Documentation
http://wintransceiver.com/http://members.tripod.com/Malzev/cbrn/index.htmhttp://members.tripod.com/Malzev/scan/index.htm
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President CB-Radio Modification
Technical Documentation for Radio Equipment
LINK`S
NTE Electronics Inc, Electronic Cross Reference Database
ECG Cross Reference
Fujitsu Semiconductor
Hewlett-Packard Semiconductor
KTC Semiconductor (Corea)
Motorola RF-Components
National Semiconductor
NEC Semiconductor
New Japan Radio Co., Ltd.
Nippon Precision Circuits
Philips Components
ST Komponenter
Sanyo Semiconductor
Siemens Semiconductor
Texas Instruments Semiconductor
Toshiba Components
Toshiba Semiconductor - PDF
www.dxzone.comAmateur Radio Search Engine
http://members.tripod.com/Malzev/cb-radio/index.htmhttp://members.tripod.com/Malzev/cb-funk/index.htmhttp://www.nteinc.com/http://www.ecgproducts.com/http://www.fujitsu.co.jp/index-e.htmlhttp://www.europe.hp.com/HP-COMP/http://dyna.kec.co.kr/english/product/semi/Tr/default.htmhttp://design-net.com/rf/rfhome.htmlhttp://www.national.com/http://www.ic.nec.co.jp/index_e.htmlhttp://www.njr.co.jp/index_e.htmhttp://www.npcproducts.com/index.htmhttp://www-us2.semiconductors.philips.com/http://www.two.st.com/stonline/books/http://www.semic.sanyo.co.jp/english/index-e.htmlhttp://www.siemens.de/semiconductor/http://www.ti.com/sc/docs/schome.htmhttp://www.semicon.toshiba.co.jp/index.htmhttp://doc.semicon.toshiba.co.jp/indexus.htmhttp://www.dxzone.com/
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CB Radio Banner Exchange
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RF Bipolar Small Signal Transistor
RF Bipolar Transistor
Transistor Type Max.Vce Max. IeMax.Diss.
hfe /Gain
Max.Freq.
NoiseFigure Case
Pin1 2 3
2N918 NPN 15V 50mA 350mW 15dB@200MHz 600MHz6dB @60MHz TO-72 EBC
2N2857 NPN 15V 40mA 200mW 12,5dB@450MHz 1,6GHz4,5dB @450MHz TO-72
2N3663 NPN 12V 30mA 350mW 1,5dB@200MHz 700MHz6,5dB @60MHz TO-92 BCE
2N3904 NPN 40V 200mA 625mW 300MHz 5dB @15,7kHz TO-92 EBC
2N4124 NPN 25V 200mA 350mW 120 300MHz 5dB@15,7kHz TO-92 EBC
2N4957 PNP 30V 30mA 200mW 17dB@450MHz 1,6GHz3dB @450MHz TO-72
2N5031 NPN 10V 20mA 200mW 14dB@450MHz 1,6GHz2,5dB @450MHz TO-72
2N5179 NPN 10V 50mA 200mW 15dB@200MHz 1,4GHz4,5dB @200MHz TO-72
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2N5770 NPN 15V 50mA 350mW 15dB@200MHz6dB @60MHz TO-92 EBC
2N6304 NPN 15V 50mA 200mW 15dB@450MHz 1,8GHz4,5dB @450MHz TO-72
2SC372 NPN 60V 150mA 400mW 200MHz TO-92
2SC380 NPN 30V 50mA 300mW 29dB@10,7MHz 100MHz TO-92 ECB
2SC383 NPN 45V 50mA 300mW 33dB@45MHz 300MHz TO-92 ECB
2SC388 NPN 25V 50mA 300mW 33dB@45MHz 300MHz TO-92 ECB
2SC394 NPN 25 100mA 200MHz TO-92
2SC454 NPN 30V 100mA 200mW 35dB@455kHz 230MHz TO-92 ECB
2SC458 NPN 30V 100mA 200mW 230MHz TO-92 ECB
2SC460 NPN 30V 100mA 200mW 29dB@10,7MHz 230MHz5dB @1Mhz TO-92 ECB
2SC461 NPN 30V 100mA 200mW 17dB@100MHz 230MHz TO-92 ECB
2SC535 NPN 30V 20mA 100mW 20dB@100MHz 450MHz3,5dB@100MHz TO-92 ECB
2SC536 NPN 40V 100mA 180MHz TO-92 ECB
2SC710 NPN 30V 30mA 200mW 200MHz TO-92
2SC711 NPN 50V 30mA 200mW 200MHz TO-92
2SC784 NPN 40V 20mA 500MHz TO-92 ECB
2SC829 NPN 45V 50mA 250mW 70 230MHz TO-92 ECB
2SC941 NPN 30V 100mA 400mW 50 120MHz 3,5dB@1MHz TO-92 ECB
2SC945 NPN 60V 100mA 250mW 250MHz TO-92 ECB
2SC1009 NPN 20V 50mA 150mW 100 250MHz 2dB @1MHz SOT-23
2SC1047 NPN 20V 20mA 400mW 20dB@100MHz 450MHz3,3dB@100MHz TO-92 ECB
2SC1342 NPN 20V 30mA 100mW 17dB@100MHz 320MHz5,5dB @100MHz TO-92 ECB
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2SC1674 NPN 30V 25mA 250mW 18dB@100MHz 600MHz5dB@100MHz TO-92 ECB
2SC1675 NPN 30V 30mA 250mW 40 150MHz 4dB @1MHz TO-92 ECB
2SC1730 NPN 30V 50mA 250mW 1,1GHz TO-92
2SC1815 NPN 40V 100mA 300mW 70 200MHz 1dB@1kHz TO-92 ECB
2SC1856 NPN 20V 20mA 250mW 200MHz TO-92
2SC1906 NPN 20V 50mA 300mW 33dB@45MHz 1GHz TO-92 ECB
2SC1907 NPN 20V 50mA 300mW 40 1,1GHz TO-92 ECB
2SC1923 NPN 30V 20mA 100mW 18dB@100MHz 550MHz2,5dB@100MHz TO-92 ECB
2SC2026 NPN 15V 50mA 2.2GHz TO-92 BEC
2SC2037 NPN 15V 50mA TO-92
2SC2120 NPN 30V 800mA 600mW 100 120MHz TO-92 ECB
2SC2216 NPN 45V 50mA 300mW 29dB@45MHz 300MHz TO-92 BEC
2SC2347 NPN 15V 50mA 250mW 20 650MHz TO-92 ECB
2SC2349 NPN 15V 50mA 250mW 600MHz TO-92 ECB
2SC2407 NPN 35V 150mA 600mW 500MHz TO-92
2SC2471 NPN 30V 50mA 310mW 20 2GHz TO-92 ECB
2SC2498 NPN 20V 50mA 300mW 80 3,5GHz 2,5dB @500MHz TO-92 BEC
2SC2512 NPN 20V 50mA 300mW 20dB@200MHz 900MHz3,8dB @200MHz TO-92 BEC
2SC2644 NPN 12V 120mA 500mW 18dB@100MHz 4GHz2dB@100MHz TO-92 BEC
2SC2668 NPN 30V 20mA 100mW 18dB@100MHz 550MHz2,5dB@100MHz MINI ECB
2SC2669 NPN 30V 50mA 200mW 30dB@10,7MHz 100MHz MINI ECB
2SC2717 NPN 25V 50mA 300mW 28dB@45MHz 300MHz TO-92 BEC
2SC2724 NPN 30V 25mA 250mW 600MHz TO-92 ECB
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2SC2753 NPN 12V 70mA 300mW 27dB@100MHz 5GHz1,7dB@100MHz TO-92 BEC
2SC2786 NPN 20V 20mA 250mW 22dB@100MHz 600MHz3dB@100MHz MINI ECB
2SC2787 NPN 30V 30mA 250mW 90 250MHz 2dB @1MHz MINI ECB
2SC2814 NPN 20V 30mA 150mW 25dB@100MHz 200MHz3dB@100MHz SOT-23
2SC2839 NPN 20V 30mA 150mW 25dB@100MHz 200MHz3dB@100MHz MINI ECB
2SC2996 NPN 30V 50mA 150mW 15dB@100MHz 100MHz4dB@150 SOT-23
2SC2999 NPN 20V 30mA 150mW 28dB@100MHz 450MHz2,2dB@100MHz MINI ECB
2SC3000 NPN 20V 30mA 250mW 25dB@100MHz 200MHz3dB@100MHz TO-92 ECB
2SC3011 NPN 7V 30mA 150mW 27dB@100MHz 6,5MHz2,3dB @1GHz SOT-23
2SC3099 NPN 20V 30mA 150mW 24dB@100MHz 4GHz1,7dB @100MHz SOT-23
2SC3127 NPN 12V 50mA 150mW 10,5dB@900MHz 4,5GHz2,2dB@900MHz SOT-23
2SC3128 NPN 12V 50mA 350mW 10,5dB@900MHz 4,5GHz2,2dB@900MHz TO-92 BEC
2SC3142 NPN 20V 30mA 150mW 28dB@100MHz 450MHz2,2dB@100MHz SOT-23
2SC3195 NPN 30V 20mA 100mW 550MHz MINI ECB
2SC3355 NPN 12V 100mA 600mW 9,5dB@1GHz 6,5GHz1,1dB@1GHz TO-92 BEC
2SC3356 NPN 12V 100mA 200mW 11dB@1GHz 7GHz1,1dB @1GHz SOT-23
2SC3429 NPN 12V 70mA 150mW 28dB@100MHz 5GHz1,7dB @100MHz SOT-23
2SC3510 NPN 12V 50mA 600mW 10,5dB@900MHz 4,5GHz2,2dB@900MHz TO-92 BEC
2SC3512 NPN 10V 50mA 600mW 10,5dB@900MHz 6GHz1,6dB@900MHz TO-92 BEC
2SC3582 NPN 10V 65mA 600mW 13dB@1GHz 8GHz1,2dB@1GHz TO-92 BEC
2SC3605 NPN 12V 80mA 600mW 27dB@100MHz 6,5GHz1,1dB@100MHz TO-92 BEC
2SC3606 NPN 12V 80mA 150mW 28dB@100MHz 5GHz1dB @500MHz SOT-23
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2SC3663 NPN 12V 50mA 350mW 15dB@200MHz6dB @60MHz TO-92 EBC
2SC4173 NPN 30V 50mA 150mW 100 250MHz 2dB@1MHz SOT-23
2SC4308 NPN 20V 300mA 600mW 50 2,5GHz TO-92 BEC
2SC4317 NPN 10V 40mA 150mW 28dB@100MHz 7GHz1dB @1GHz SOT-23
2SC4321 NPN 10V 40mA 150mW 28dB@100MHz 7GHz1dB @1GHz SOT-23
2SC4322 NPN 10V 15mA 150mW 24dB@100MHz 7GHz1,4dB @1GHz SOT-23
2SC4399 NPN 20V 30mA 150mW 25dB@100MHz 200MHz3dB @100MHz SOT-23
2SC4433 NPN 18V 50mA 300mW 26dB@100MHz 750MHz MINI ECB
2SC4628 NPN 20V 20mA 200mW 10dB@800MHz 1GHz7dB @100MHz TO-92 ECB
2SC4629 NPN 9V 50mA 600mW 11,5dB@900MHz 8GHz1,2dB @900MHz TO-92 ECB
2SC4874 NPN 12V 50mA 600mW 10dB@900MHz 5,8GHz1,8dB @900MHz TO-92 ECB
2SC4875 NPN 9V 50mA 450mW 11,5dB@900MHz 8,5GHz1,3dB @900MHz TO-92 ECB
2SC5064 NPN 12V 30mA 150mW 24dB@100MHz 5GHz1dB @500MHz SOT-23
2SC5084 NPN 12V 80mA 150mW 26dB@100MHz 5GHz1dB @500MHz SOT-23
2SC5085 NPN 12V 80mA 150mW 16,5dB@500MHz 5GHz1dB @500MHz SOT-23
2SC5089 NPN 10V 40mA 150mW 28dB@100MHz 7GHz1,1dB @1GHz SOT-23
2SC5094 NPN 10V 15mA 150mW 23dB@100MHz 7GHz1,4dB @1GHz SOT-23
2SC5106 NPN 10V 30mA 150mW 21dB@100MHz 4GHz SOT-23
2SC5109 NPN 10V 60mA 150mW 21dB@100MHz 3GHz SOT-23
2SC5254 NPN 7V 40mA 150mW 28dB@100MHz 9GHz1,1dB @1GHz SOT-23
2SC5259 NPN 7V 15mA 150mW 22dB@100MHz 9GHz1,3dB @1GHz SOT-23
2SC5570 NPN 15V 50mA 350mW 1,5dB@200MHz 700MHz6,5dB @60MHz TO-92 EBC
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2SK380 NPN 30V 50mA 300mW 400MHz TO-92 ECB
2SK1923 NPN 30V 20mA 100mW 550MHz 2,5dB@100MHz TO-92 ECB
BF115 NPN 30V 25mA 125mW 45 250MHz TO-72
BF167 NPN 30V 25mA 125mW 26 350MHz TO-92
BF173 NPN 25V 25mA 200mW 40 700MHz 2,6dB @36MHz TO-72 BEC*
BF180 NPN 20V 20mA 150mW 15 675MHz TO-72
BF184 NPN 20V 30mA 150mW 75 300MHz TO-72
BF185 NPN 20V 30mA 150mW 35 220MHz TO-72
BF198 NPN 30V 25mA 500mW 400MHz 3dB @ TO-92
BF199 NPN 25V 25mA 300mW 40 550MHz 6dB @45MHz TO-92 CEB
BF200 NPN 20V 20mA 150mW 15 650MHz TO-72
BF224 NPN 30V 50mA 250mW 30 450MHz TO-92 CEB
BF240 NPN 40V 25mA 300mW 67 150MHz 4dB@60MHz TO-92 CEB
BF241 NPN 40V 25mA TO-92 CEB
BF254 NPN 20V 30mA 200mW 200MHz TO-92
BF255 NPN 20V 30mA 300mW 200MHz TO-92 CEB
BF314 NPN 30V 25mA 300mW 30 600MHz 2dB @200MHz CBE
BF324 PNP 30V 25mA 300mW 25 450MHz TO-92 CBE
BF370 NPN 15V 200mA 500mW 40 500MHz TO-92 CBE
BF414 NPN 30V 25mA 300mW 80 400MHz 3dB@100MHz TO-92 EBC
BF494 NPN 20V 30mA 300mW 67 120MHz 4dB@ TO-92 CEB
BF495 NPN 20V 30mA 300mW 35 120MHz 4dB@ TO-92 CEB
BF496 NPN 20V 20mA 300mW 30dB@100MHz 550MHz2,5dB @200Mhz TO-92
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BF506 PNP 35V 30mA 300mW 17,5dB@200MHz 300MHz3dB @200Mhz TO-92 EBC
BF689K NPN 15V 25mA 360mW 16dB@200MHz 1,8GHz3dB @200Mhz TO-92
BF748 NPN 20V 50mA 500mW 20dB@100MHz 1,2GHz4,5dB @100Mhz TO-92
BF751 NPN 14V 35mA 600mW 11dB@1000MHz 6,5GHz2,7dB @1000Mhz TO-92
BF763 NPN 15V 25mA 360mW 13dB@800MHz 1,8GHz TO-92
BF775 NPN 15V 30mA 280mW 15dB@900MHz 5GHz1,8dB @900MHz SOT-23
BF799W NPN 20V 35mA 280mW 800MHz 3dB @100MHz SOT-23
BF840 NPN 40V 25mA 280mW 65 380MHz 1,7dB@100kHz SOT-23
BF926 NPN 20V 25mA 250mW 17,5dB@200MHz 350MHz5dB @200Mhz TO-92
BF959 NPN 20V 100mA 500mW 40 600MHz 3dB@200MHz TO-92
BFR90 NPN 15V 30mA 300mW 19,5dB@500MHz 5GHz2,2dB @500MHz SOT-37
BFR90A NPN 15V 30mA 300mW 16dB@800MHz 6GHz2,8dB @800MHz SOT-37
BFR91 NPN 12V 50mA 300mW 18dB@500MHz 5GHz1,9dB @500MHz SOT-37
BFR91A NPN 12V 50mA 300mW 14dB@800MHz 6GHz1,6dB @800MHz SOT-37
BFR92 NPN 15V 30mA 200mW 19,5dB@500MHz 5GHz2,2dB @500MHz SOT-23
BFR92A NPN 15V 30mA 200mW 16dB@800MHz 6GHz1,8dB @800MHz SOT-23
BFR92L NPN 15V 35mA 350mW 3,4GHz SOT-23
BFR93 NPN 12V 40mA 200mW 18dB@500MHz 5GHz1,9dB@500MHz SOT-23
BFR93A NPN 12V 40mA 200mW 14dB@800MHz 6GHz1,6dB@800MHz SOT-23
BFR93L NPN 12V 35mA 350mW 3GHz 2,5dB@30MHz SOT-23
BFR96 NPN 15V 100mA 500mW 14,5dB@500MHz 4,5GHz2dB @500MHz SOT-37
BFR96T NPN 15V 75mA 500mW 16dB@500MHz 5GHz2,3dB@500MHz SOT-23
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BFR96TS NPN 15V 100mA 700mW 11,5dB@800MHz 5GHz3,3dB@500MHz SOT-23
BFR520 NPN 15V 70mA 300mW 60 9GHz 1,1dB@900MHz SOT-23
BFY90 NPN 15V 50mA 200mW 21dB@200MHz 1,7GHz2,5dB @200MHz TO-72 EBC*
KTC3194 NPN 30V 20mA 625mW 18dB@100MHz 550MHz2,5dB@100MHz MINI ECB
KTC3195 NPN 30V 20mA 400mW 18dB@100MHz 550MHz2,5dB@100MHz MINI ECB
KTC3880 NPN 30V 20mA 150mW 18dB@100MHz 550MHz2,5dB@100MHz SOT-23
MPS536 PNP 10V 30mA 625mW 14dB@500MHz 5GHz4,5dB @500MHz TO-92
MPS571 NPN 10V 80mA 625mW 14dB@500MHz 5GHz2dB @500MHz TO-92
MPS901 NPN 15V 30mA 625mW 12dB@900MHz 5GHz2,5dB @900MHz TO-92
MPS911 NPN 12V 40mA 625mW 16,5dB @500MHz 7GHz1,7dB @500MHz TO-92
MPS3866 NPN 30V 400mA 625mW 10dB@400MHz 800MHz TO-92
* = Shield lead connected to case
CB Radio Banner Exchange
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Component DatabaseComponents for CB-Radios and transmitter/receiver equipment
RF Bipolar Small Signal Transistor
RF FET Small Signal Transistor
RF Power Transistor
Shortform Transistor Catalogue
Integrated Circuits
Variable capacitance diode
Albrecht Radio Equipment
Scanner Documentation
http://wintransceiver.com/http://members.tripod.com/Malzev/cbrn/index.htmhttp://members.tripod.com/Malzev/scan/index.htm
-
President CB-Radio Modification
Technical Documentation for Radio Equipment
LINK`S
NTE Electronics Inc, Electronic Cross Reference Database
ECG Cross Reference
Fujitsu Semiconductor
Hewlett-Packard Semiconductor
KTC Semiconductor (Corea)
Motorola RF-Components
National Semiconductor
NEC Semiconductor
New Japan Radio Co., Ltd.
Nippon Precision Circuits
Philips Components
ST Komponenter
Sanyo Semiconductor
Siemens Semiconductor
Texas Instruments Semiconductor
Toshiba Components
Toshiba Semiconductor - PDF
www.dxzone.comAmateur Radio Search Engine
http://members.tripod.com/Malzev/cb-radio/index.htmhttp://members.tripod.com/Malzev/cb-funk/index.htmhttp://www.nteinc.com/http://www.ecgproducts.com/http://www.fujitsu.co.jp/index-e.htmlhttp://www.europe.hp.com/HP-COMP/http://dyna.kec.co.kr/english/product/semi/Tr/default.htmhttp://design-net.com/rf/rfhome.htmlhttp://www.national.com/http://www.ic.nec.co.jp/index_e.htmlhttp://www.njr.co.jp/index_e.htmhttp://www.npcproducts.com/index.htmhttp://www-us2.semiconductors.philips.com/http://www.two.st.com/stonline/books/http://www.semic.sanyo.co.jp/english/index-e.htmlhttp://www.siemens.de/semiconductor/http://www.ti.com/sc/docs/schome.htmhttp://www.semicon.toshiba.co.jp/index.htmhttp://doc.semicon.toshiba.co.jp/indexus.htmhttp://www.dxzone.com/
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CB Radio Banner Exchange
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RF FET Small Signal Transistor
FET Transistor
Transistor Type Max.VdsMax.
IdMax.Diss. Gain
Max.Freq.
NoiseFigure Case
Pin1234
2N3819 N-CHJ-FET 25V 10mA 350mW3dB @400MHz TO-92 SGD
2N4416 N-CHJ-FET 30V 15mA 300mW18dB @100MHz 450MHz
2dB @100MHz TO-72 SDG*
2N4416A N-CHJ-FET 35V 15mA 300mW18dB @100MHz 400MHz
2dB @100MHz TO-72 SDG*
2N5245 N-CHJ-FET 30V 18mA 360mW TO-92
2N5248 N-CHJ-FET 30V 20mA 200mW TO-92 SGD
2N5484 N-CHJ-FET 25V 5mA 310mW16dB @100MHz 200MHz
3dB @100MHz TO-92 DSG
2N5485 N-CHJ-FET 25V 10mA 310mW18dB @100MHz 400MHz
2dB @100MHz TO-92 DSG
2N5486 N-CHJ-FET 25V 20mA 350mW18dB @100MHz 400MHz
2dB @100MHz TO-92 DSG
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2N5668 N-CHJ-FET 25V 5mA 360mW 400MHz2,5dB @100MHz TO-92
2N5669 N-CHJ-FET 25V 10mA 360mW 400MHz2,5dB @100MHz TO-92
2N5670 N-CHJ-FET 25V 20mA 360mW 400MHz2,5dB @100MHz TO-92
2SK19 N-CHJ-FET 18V 10mA 200mW TO-92 DSG
2SK44 N-CHJ-FET MINI
2SK49 N-CHJ-FET TO92
2SK125 N-CHJ-FET 25V 30mA 200mW1,5dB @100MHz TO-92
2SK161 N-CHJ-FET 18V 10mA 200mW18dB @100MHz
2,5dB @100MHz MINI DSG
2SK192 N-CHJ-FET 18V 10mA 200mW24dB @100MHz
1,8dB @100MHz MINI DSG
2SK241 N-CHJ-FET 20V 30mA 200mW28dB @100MHz
1,7dB @100MHz MINI DSG
2SK544 N-CHJ-FET 20V 30mA 300mW27dB @100MHz
1,8dB @100MHz DSG
2SK709 N-CHJ-FET 20V 10mA 300mW TO-92 DSG
2SK710 N-CHJ-FET 20V 10mA 200mW MINI DGS
3N200N-CH DualGateMOSFET
20V 50mA 330mW 500MHz 4,5dB @400MHz TO-72
3N201N-CH DualGateMOSFET
25V 50mA TO-72
3N202N-CH DualGateMOSFET
25V 50mA 360mW 200MHz 4,5dB @200MHz TO-72
3N204N-CH DualGateMOSFET
TO-72
3N211N-CH DualGateMOSFET
25V 50mA 360mW TO-72
3N212N-CH DualGateMOSFET
TO-72
-
3N213N-CH DualGateMOSFET
TO-72
3SK39N-CH DualGateMOSFET
20V 25mA TO-72
3SK40N-CH DualGateMOSFET
15V 25mA 250mW TO-72
3SK45N-CH DualGateMOSFET
TO-72
3SK48N-CH DualGateMOSFET
TO-72
3SK51N-CH DualGateMOSFET
20V 35mA TO-72
3SK59N-CH DualGateMOSFET
20V 35mA TO-72
3SK72N-CH DualGateMOSFET
TO-72
3SK73N-CH DualGateMOSFET
20V 3mA TO-72
3SK74N-CH DualGateMOSFET
20V 7mA 200mW SOT-37
3SK75N-CH DualGateMOSFET
TO-72
3SK81N-CH DualGateMOSFET
20V 5mA
3SK88N-CH DualGateMOSFET
SOT-37
3SK97N-CH DualGateMOSFET
3SK126N-CH DualGateMOSFET
15V 30mA 150mW 25dB@200MHz1,4dB@200MHz SOT-143 SDGG
3SK173N-CH DualGateMOSFET
TO-72
3SK180N-CH DualGateMOSFET
15V 30mA 200mW 28dB@100MHz1,8dB@100MHz SOT-143 SDGG
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3SK198N-CH DualGateMOSFET
13V 50mA 200mW 19dB@800MHz1,2dB@800MHz SOT-143 SDGG
3SK199N-CH DualGateMOSFET
13,5V 30mA 150mW 19,5dB@800MHz1,9dB@800MHz SOT-143 SDGG
3SK207N-CH DualGateMOSFET
13,5V 30mA 150mW 19,5dB@800MHz1,9dB@800MHz SOT-143 SDGG
3SK225N-CH DualGateMOSFET
13,5V 30mA 150mW 22dB@500MHz2dB@500MHz SOT-143 SDGG
3SK226N-CH DualGateMOSFET
13,5V 30mA 150mW 27dB@200MHz1,1dB@200MHz SOT-143 SDGG
3SK232N-CH DualGateMOSFET
13,5V 30mA 150mW 20dB@800MHz1,5dB@800MHz SOT-143 SDGG
3SK240N-CH DualGateMOSFET
9V 1mA 150mW 20,5dB@800MHz1dB@800MHz SOT-143 SDGG
3SK249N-CH DualGateMOSFET
12,5V 30mA 150mW 20dB@800MHz1,5dB@800MHz SOT-143 SDGG
3SK256N-CH DualGateMOSFET
13,5V 30mA 150mW 19,5dB@800MHz1,9dB@800MHz SOT-143 SDGG
3SK257N-CH DualGateMOSFET
13,5V 30mA 100mW 22dB@800MHz2dB@800MHz SOT-143 SDGG
3SK259N-CH DualGateMOSFET
13,5V 30mA 100mW 19dB@800MHz2,6dB@800MHz SOT-143 SDGG
3SK260N-CH DualGateMOSFET
13,5V 30mA 100mW 24,5dB@200MHz3,3dB@200MHz SOT-143 SDGG
3SK263N-CH DualGateMOSFET
15V 30mA 200mW 21dB@200MHz1,1dB@200MHz SOT-143 SDGG
3SK264N-CH DualGateMOSFET
15V 30mA 200mW 23dB@200MHz1,1dB@200MHz SOT-143 SDGG
3SK265N-CH DualGateMOSFET
15V 30mA 200mW 26dB@200MHz1,1dB@200MHz SOT-143 SDGG
3SK274N-CH DualGateMOSFET
9V 1mA 100mW 20,5dB@800MHz1dB@800MHz SOT-143 SDGG
-
3SK291N-CH DualGateMOSFET
12,5V 30mA 150mW 22,5dB@800MHz1,5dB@800MHz SOT-143 SDGG
3SK292N-CH DualGateMOSFET
12,5V 30mA 150mW 26dB@500MHz1,4dB@500MHz SOT-143 SDGG
3SK293N-CH DualGateMOSFET
12,5V 30mA 100mW 22,5dB@500MHz1,5dB@500MHz SOT-143 SDGG
3SK294N-CH DualGateMOSFET
12,5V 30mA 100mW 26dB@500MHz1,4dB@500MHz SOT-143 SDGG
3SK320N-CH DualGateMOSFET
6V 1mA 100mW 15dB@2GHz1,4dB@2GHz SOT-143 SDGG
40673N-CH DualGateMOSFET
20V 50mA 330mW 400MHz 6dB @200MHz TO-72
40823N-CH DualGateMOSFET
20V 50mA TO-72
40841N-CH DualGateMOSFET
20V 50mA 14dB @50MHz3dB @50MHz TO-72
BF244 N-CHJ-FET 30V 50mA 500mW TO-92
BF245A N-CHJ-FET 30V 6,5mA 300mW 700MHz1,5dB @100MHz TO-92 DSG
BF245B N-CHJ-FET 30V 615mA 300mW 700MHz1,5dB @100MHz TO-92 DSG
BF245C N-CHJ-FET 30V 25mA 300mW 700MHz1,5dB @100MHz TO-92 DSG
BF256 N-CHJ-FET 30V 10mA 300mW 1GHz TO-92 GSD
BF410A N-CHJ-FET 20V 30mA 300mW1,5dB @100MHz TO-92 GSD
BF410B N-CHJ-FET 20V 30mA 300mW1,5dB @100MHz TO-92 GSD
BF410C N-CHJ-FET 20V 30mA 300mW1,5dB @100MHz TO-92 GSD
BF410D N-CHJ-FET 20V 30mA 300mW1,5dB @100MHz TO-92 GSD
BF543 N-CHMOS-FET 20V 30mA 200mW22dB@200MHz 300MHz
1dB @200MHz SOT-23
BF900N-CH DualGateMOSFET
SOT-37
-
BF905N-CH DualGateMOSFET
BF907N-CH DualGateMOSFET
BF908WRN-CH DualGateMOSFET
12V 40mA 300mW 0,6dB @200MHz SOT-143
BF910N-CH DualGateMOSFET
20V 50mA 300mW
BF960N-CH DualGateMOSFET
20V 20mA 225mW 800MHz SOT-37
BF961N-CH DualGateMOSFET
20V 30mA 200mW 20dB@200MHz 2GHz1,8dB@200MHz TO-50 DSGG
BF964SN-CH DualGateMOSFET
20V 30mA 200mW 25dB@200MHz 2GHz1dB@200MHz TO-50 DSGG
BF966SN-CH DualGateMOSFET
20V 30mA 200mW 25dB@200MHz 2GHz1dB@200MHz TO-50 DSGG
BF981N-CH DualGateMOSFET
20V 20mA
BF982N-CH DualGateMOSFET
20V 40mA 200MHz
BF988N-CH DualGateMOSFET
12V 30mA 800MHz
BF989N-CH DualGateMOSFET
20V 20mA 200mW 1,6dB @200MHz SOT-143
BF990AN-CH DualGateMOSFET
18V 30mA 200mW 2dB@800MHz SOT-143
BF991N-CH DualGateMOSFET
20V 30mA 200mW 29dB@100MHz0,7dB@100MHz SOT-143
BF992N-CH DualGateMOSFET
20V 40mA 200mW 1,2dB@200MHz SOT-143
BF994N-CH DualGateMOSFET
20V 30mA 200mW 25dB@200MHz1dB@200MHz SOT-143
BF994SN-CH DualGateMOSFET
20V 30mA 200mW 25dB@200MHz 2GHz1dB@200MHz SOT-143 SDGG
-
BF995N-CH DualGateMOSFET
20V 30mA 200mW 20dB@200MHz1,8dB@200MHz SOT-143 SDGG
BF996N-CH DualGateMOSFET
20V 30mA 200mW 25dB@200MHz1dB@200MHz SOT-143
BF996SN-CH DualGateMOSFET
20V 30mA 200mW 25dB@200MHz 2GHz1dB@200MHz SOT-143 SDGG
BF997N-CH DualGateMOSFET
20V 30mA 200mW 25dB@200MHz 1GHz1dB@200MHz SOT-143
BF961N-CH DualGateMOSFET
20V 30mA 200mW 28dB@200MHz 2GHz1dB@200MHz SOT-143 SDGG
BF543 N-CHMOS-FET 20V 30mA 200mW25dB@200MHz 300MHz
1dB @200MHz SOT-23
BF1100N-CH DualGateMOSFET
14V 30mA 280mW 2dB@800MHz SOT-143
MFE201N-CH DualGateMOSFET
TO-72
MPF102 N-CHJ-FET 25V 20mA 310mW 200MHz4dB @400MHz TO-92
MPF106 N-CHJ-FET 25V 30mA 310mW 400MHz4dB @200MHz TO-92
SK3050N-CH DualGateMOSFET
20V 50mA 330mW 400MHz 6dB @200MHz TO-72
SK3065N-CH DualGateMOSFET
20V 50mA 330mW 500MHz 4,5dB @400MHz TO-72
SK3991N-CH DualGateMOSFET
25V 50mA 360mW 200MHz 4,5dB @200MHz TO-72
* = Shield lead connected to case
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-
RF Power Transistor
1 2 3TO-92L
1 2 3TO-202
1 2 3TO-202N
1 2 3TO-126
1 2 3TO-220 T-31E
Bipolar NPN Power Transistor
Transistor Power Gain Voltage Frequency Mode Case Pin 123
2N3375 10W 5dB 28V 400MHz FM TO-60
2N3553 2,5W 12dB 28V 175MHz FM/AM TO-39
2N3632 20W 7dB 28V 175MHz FM TO-60
2N5943 1W 8dB 15V 400MHz FM TO-39
2N6094 75W 15dB 28V 30MHz FM/AM/SSB TO-217
2SC1173 10W 100MHz FM/AM/SSB TO-220
2SC1306 16W 30MHz FM/AM/SSB TO-220 B C E
2SC1307 16W 12dB 12V 30MHz FM/AM/SSB TO-220 B C E
-
2SC1590 5W 10dB 12,5V 136-174MHz FM TO-220 B E C
2SC1591 14W 7,5dB 12,5V 136-174MHz FM TO-220 B E C
2SC1678 5W 30MHz TO-220 B C E
2SC1728 8W 80MHz TO-202 E B C
2SC1729 14W 10dB 13,5V 175MHz FM T-31E
2SC1909 10W 14,5dB 13,5V 50MHz FM/AM/SSB TO-220 B C E
2SC1944 13W 11,1dB 12V 30MHz TO-220 B C E
2SC1945 16W 14,5dB 12V 30MHz FM/AM/SSB TO-220 B E C
2SC1946 25W 6,7dB 13,5V 175MHz FM T-31E
2SC1946A 30W 10dB 13,5V 175MHz FM T-31E
2SC1957 1,8W 17dB 12V 30MHz TO-126 E C B
2SC1966 3W 7,8dB 13,5V 470MHz FM T-31E
2SC1967 7W 6,7dB 13,5V 470MHz FM T-31E
2SC1968 14W 3,7dB 13,5V 470MHz FM T-31E
2SC1968A 14W 5,4dB 13,5V 470MHz FM T-31E
2SC1969 18W 12dB 12V 30MHz FM/AM/SSB TO-220 B C E
2SC1970 1,5W 10dB 13,5V 175MHz TO-220 B E C
2SC1971 7W 10dB 13,5V 175MHz TO-220 B E C
2SC1972 14W 10dB 13,5V 175MHz TO-220 B E C
2SC1973 1W 50MHz TO-92L B C E
2SC1974 13W 10dB 13,5V 30MHz TO-220 B C E
2SC1975 4W 10dB 13,5V 30MHz TO-220 B C E
2SC2028 1,8W 30MHz TO-126 E C B
-
2SC2029 6W 30MHz TO-220 B C E
2SC2036A 1,4W TO-202 B C E
2SC2050 20W 12dB 13,5V 30MHz FM/AM/SSB TO-220 B C E
2SC2053 0,2W 15,7dB 12V 175MHz FM/AM TO-92L B C E
2SC2055 0,25W 15,3dB 12V 175MHz FM/AM TO-92L B C E
2SC2075 4W 13,5 27MHz TO-220 B C E
2SC2078 4W 13dB 12V 100MHz FM/AM TO-220 B C E
2SC2086 0,45W 13dB 12V 175MHz FM/AM TO-92L B C E
2SC2092 4W 13dB 12V 100MHz FM/AM/SSB TO-220 B C E
2SC2094 15W 8,8dB 13,5V 175MHz FM/AM/SSB T-31E
2SC2166 6W 13,8dB 12V 30MHz FM/AM/SSB TO-220 B C E
2SC2207 16W TO-220 B E C
2SC2237 6W 13,8dB 13,5V 175MHz FM T-31E
2SC2312 18,5W 27MHz FM/AM/SSB TO-220 B C E
2SC2314 1,8W 17dB 12V 180MHz FM/AM TO-126 E C B
2SC2509 13W 14dB 30MHz TO-220 B E C
2SC2527 60W TO-220
2SC2538 0,6W 10dB 12V 175MHz FM/AM TO-92L B C E
2SC2539 14W 14,5dB 13,5V 175MHz FM T-31E
2SC2660 30W TO-220
2SC2695 23W 1,9dB 13,5V 520MHz FM T-31E
2SC3001 6W 13dB 7,2V 175MHz FM T-31E
2SC3018 3W 13dB 7,2V 175MHz FM T-31E
2SC3020 3W 10dB 12,5V 520MHz FM T-31E
-
2SC3021 7W 7,7dB 12,5V 520MHz FM T-31E
2SC3022 18W 4,8dB 12,5V 520MHz FM T-31E
2SC3103 2,8W 6,7dB 7,2V 520MHz FM T-31E
2SC3104 6W 4,8dB 7,2V 520MHz FM T-31E
2SC3133 13W 14dB 12V 1,5-30MHz FM/AM/SSB TO-220 B E C
2SC3299 20W TO-220
2SC4137 4W 400MHz TO-126
2SC4693 FM/AM TO-92L B C E
KTC1006 1W 100MHz FM/AM TO-92L E C B
KTC1969 16W 12dB 12V 100MHz FM/AM TO-220 B C E
KTC2078 4W 11dB 12V 100MHz FM/AM TO-220 B C E
MRF161 5W 13,5dB 12,5V 225-500MHz FM/AM TO-220 B E C
MRF162 15W 13,5dB 12,5V 225-500MHz FM/AM TO-220 B E C
MRF163 25W 12dB 12,5V 225-500MHz FM/AM TO-220 B E C
MRF260 5W 10dB 12,5V 136-174MHz FM TO-220 B E C
MRF261 10W 5,2dB 12,5V 136-174MHz FM TO-220 B E C
MRF262 14W 7,5dB 12,5V 136-174MHz FM TO-220 B E C
MRF264 30W 5,2dB 12,5V 136-174MHz TO-220 B E C
MRF340 8W 13dB 28V 30-200MHz TO-220 B E C
MRF342 24W 11dB 28V 30-200MHz TO-220 B E C
MRF344 60W 6dB 28V 30-200MHz TO-220
MRF475 12W 10dB 13,5V 1,5-30MHz FM/AM/SSB TO-220 B C E
MRF476 3W 15dB 13,5V 1,5-30MHz FM/AM/SSB TO-220 B C E
-
MRF477 40W 15dB 13,5V 1,5-30MHz FM/AM/SSB TO-220 B E C
MRF479 15W 10dB 13,5V 1,5-30MHz FM/AM/SSB TO-220
MRF485 15W 10dB 28V 1,5-30MHz TO-220
MRF486 40W 15dB 28V 1,5-30MHz TO-220
MRF496 40W 15dB 13,5V 1,5-30MHz TO-220
MRF497 60W 10dB 13,5V 27-50MHz TO-220 B E C
MRF660 7W 5,4dB 12,5V 400-512MHz TO-220
FET Power Transistor
MS1307 25W dB 13,5V 30MHz FM/AM/SSB TO-220 G D S
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2SC1307Silicon NPN TransistorFinal RF Power Output
The 2SC1307 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.
B C E
Features:
High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz)●
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz
●
Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/WThermal Resistance, Junction-to-Ambient, RthJA 73.5°C/W
-
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180
Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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-
2SC1590Silicon NPN Transistor
RF Power Output
The 2SC1590 is a silicon NPN epitaxial planer typetransistor designed for 136-174MHz RF poweramplifiers on VHF band mobile radio applications.
B E C
Features:
High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)●
Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz
●
Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 12ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 12.5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 10°C/WThermal Resistance, Junction-to-Ambient, RthJA 83°C/W
-
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 500 µA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µA
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180
Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 6 7 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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-
2SC1591Silicon NPN Transistor
RF Power Output
The 2SC1591 is a silicon NPN epitaxial planer typetransistor designed for 136-174MHz RF poweramplifiers on VHF band mobile radio applications.
B E C
Features:
High Power Gain: Gpe >/= 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)●
Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz
●
Application:
10 to 14 Watt Output Power Amplifier in VHF Band Mobile Radio Applications●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 3.5ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 25WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Junction-to-Case, RthJC 6°C/WThermal Resistance, Junction-to-Ambient, RthJA 100°C/W
-
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 1000 µA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µA
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180
Power Output PO VCC = 13.5V, Pin = 2.5W, f = 175MHz 14 15 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC1909Silicon NPN TransistorFinal RF Power Output
Description:
2SC1909 is a silicon NPN transistor in a TO220 type case designed for use in highpower output amplifier stages such as citizen band communications equipment.
B C E
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous Peak
3A5A
Collector Power Dissipation (TA = +25°C), PD 1.2WCollector Power Dissipation (TC = +50°C), PD 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 80 - - V
Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 40V IE = 0 - - 10 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 10 µA
DC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200
Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 V
Base-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 V
Current Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - MHz
-
Output Capacitance Cob VCB = 10V, f = 1MHz 25 - -
Power Output PO VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 - - W
Collector Efficiency 60 - - %
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2SC1945Silicon NPN TransistorFinal RF Power Output
The 2SC1945 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.
B E C
Features:
High Power Gain: Gpe >/= 14,5dB (VCC = 12V, PO = 18W, f = 27MHz)●
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 18W, f = 27MHz
●
Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 40VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/WThermal Resistance, Junction-to-Ambient, RthJA 83,3°C/W
-
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180
Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 14 16 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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-
2SC1946Silicon NPN Transistor
Final RF Power Output in VHF band mobile radioapplication.
E C E
The 2SC1946 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers.
E B E
Features:
High Power Gain: Gpe >/= 6,7dB (VCC = 13,5V, PO = 28W, f = 175MHz)●
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 30W, f = 175MHz
●
Application:
25 Watt output power amplifiers in VHF band.●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 7ACollector Power Dissipation (TA = +25°C), PD 3WCollector Power Dissipation (TC = +50°C), PD 50WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -65° to +175°CThermal Resistance, Rth-c 3°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
-
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 2 mA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 1 mA
DC Forward Current Gain hFE VCE = 10V, IC = 0,2A, Note 1 10 50 180
Power Output PO VCC = 13,5V, Pin = 6W, f = 175MHz 28 32 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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-
2SC1946ASilicon NPN Transistor
Final RF Power Output in VHF band mobile radioapplication.
E C E
The 2SC1946A is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers.
E B E
Features:
High Power Gain: Gpe >/= 10dB (VCC = 13,5V, PO = 30W, f = 175MHz)●
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 30W, f = 175MHz
●
Application:
25 Watt output power amplifiers in VHF band.●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 7ACollector Power Dissipation (TA = +25°C), PD 3WCollector Power Dissipation (TC = +50°C), PD 50WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Rth-c 3°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
-
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 2 mA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 1 mA
DC Forward Current Gain hFE VCE = 10V, IC = 0,2A, Note 1 10 50 180
Power Output PO VCC = 13,5V, Pin = 6W, f = 175MHz 30 35 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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-
2SC1957Silicon NPN TransistorFinal RF Power Output
The 2SC1957 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.
B C E
Features:
High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz)●
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz
●
Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/W
-
Thermal Resistance, Junction-to-Ambient, RthJA 73.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180
Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC1969Silicon NPN TransistorFinal RF Power Output
The 2SC1969 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.
B C E
Features:
High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz)●
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz
●
Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/W
-
Thermal Resistance, Junction-to-Ambient, RthJA 73.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180
Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
-
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2SC1970Silicon NPN Transistor
RF Power Output
The 2SC1970 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on VHFband mobile radio applications.
B E C
Features:
High Power Gain: Gpe >/= 9,2dB (VCC = 13.5V, PO = 6W, f = 175MHz)●
Application:
0,8 to 1 Watt Output Power Amplifier Applications in VHF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,6ACollector Power Dissipation (TA = +25°C), PD 1WCollector Power Dissipation (TC = +50°C), PD 5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 25°C/WThermal Resistance, Junction-to-Ambient, RthJA 125#176;C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
-
Collector-Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180
Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 1 1,2 - W
Collector Efficiency 50 60 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC1971Silicon NPN Transistor
RF Power Output
The 2SC1971 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on VHFband mobile radio applications.
B E C
Features:
High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)●
Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz
●
Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 2ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 12.5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 10°C/WThermal Resistance, Junction-to-Ambient, RthJA 83°C/W
-
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 500 µA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µA
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180
Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 6 7 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC1972Silicon NPN Transistor
RF Power Output
The 2SC1972 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on VHFband mobile radio applications.
B E C
Features:
High Power Gain: Gpe >/= 7,5dB (VCC = 13.5V, PO = 14W, f = 175MHz)●
Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz
●
Application:
10 to 14 Watt Output Power Amplifier Applications in VHF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 3,5ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 25WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6°C/WThermal Resistance, Junction-to-Ambient, RthJA 100°C/W
-
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 1000 µA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µA
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180
Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 14 15 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC1973Silicon NPN Transistor
RF Amplifier
The 2SC1973 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on HF bandmobile radio applications.
B C E
Application:
Driver Amplifier Applications in HF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 55VCollector-Base Voltage, VCBO -VEmitter-Base Voltage, VEBO -VCollector Current, IC 0,5ACollector Power Dissipation (TA = +25°C), PD 1WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA -°C/W
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2SC2036AAudio Amplifier, Driver
E C B
Absolute Maximum Ratings: (TA = +25°C unles otherwise specified)
Collector-Base Voltage, VCBO 180VCollector-Emitter Voltage, VCEO 160VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous Peak
1.5A3.0A
Collector Dissipation (TA = +25°C), PC 1WCollector Dissipation (TC = +25°C), PC 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 180 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 160 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 160V, IE = 0 - - 10 µA
DC Current Gain hFE IC = 150mA, VCE = 5V 60 - 200
IC = 500mA, VCE = 5V 30 - -
Collector-Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA - - 1 V
Base-Emitter Voltage VBE VCE = 5V, IC = 150mA - - 1.5 V
Transition Frequency fT IC = 500mA, VCE = 5V - 140 - MHz
-
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 14 - pF
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2SC2053Silicon NPN Transistor
RF Amplifier
The 2SC2053 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on VHF bandmobile radio applications.
B C E
Features:
High Power Gain: Gpe >/= 15,7dB (VCC = 13,5V, PO = 0,15W, f = 175MHz)●
Application:
Driver Amplifier Applications in VHF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 40VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,3ACollector Power Dissipation (TA = +25°C), PD 0,6WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 183°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 15V IE = 0 - - 20 µA
-
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 20 µA
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180
Power Output PO VCC = 13.5V, Pin = 4mW, f = 175MHz 0,15 0,2 - W
Collector Efficiency 40 50 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC2055Silicon NPN Transistor
RF Amplifier
The 2SC2055 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on VHF bandmobile radio applications.
B C E
Features:
High Power Gain: Gpe >/= 13dB (VCC = 7,2V, PO = 0,2W, f = 175MHz)●
Application:
Driver Amplifier Applications in VHF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 9VCollector-Base Voltage, VCBO 18VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,3ACollector Power Dissipation (TA = +25°C), PD 0,5WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 220°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 18 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 9 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 10V IE = 0 - - 30 µA
-
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 30 µA
DC Forward Current Gain hFE VCE = 7V, IC = 50mA, Note 1 10 50 180
Power Output PO VCC = 13.5V, Pin = 4mW, f = 175MHz 0,2 0,25 - W
Collector Efficiency 50 60 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC2078Silicon NPN TransistorFinal RF Power Output
The 2SC2078 is a silicon NPN transistor in a TO220type case designed for use in high power outputamplifier stages such as citizen band communicationsequipment.
B C E
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous Peak
3A5A
Collector Power Dissipation (TA = +25°C), PD 1.2WCollector Power Dissipation (TC = +50°C), PD 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 80 - - V
Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 40V IE = 0 - - 10 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 10 µA
DC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200
-
Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 V
Base-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 V
Current Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - MHz
Output Capacitance Cob VCB = 10V, f = 1MHz 25 - -
Power Output PO VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 - - W
Collector Efficiency 60 - - %
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2SC2086Silicon NPN Transistor
RF Amplifier
The 2SC2086 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on HF bandmobile radio applications.
B C E
Features:
High Power Gain: Gpe >/= 13dB (VCC = 12V, PO = 0,3W, f = 27MHz)●
Application:
Driver Amplifier Applications in HF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 35VCollector-Base Voltage, VCBO 75VEmitter-Base Voltage, VEBO 4VCollector Current, IC 1ACollector Power Dissipation (TA = +25°C), PD 0,8WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 137,5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 75 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 35 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 10 µA
-
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 35 70 300
Power Output PO VCC = 12V, Pin = 15mW, f = 27MHz 0,3 0,45 - W
Collector Efficiency 50 60 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC2092Silicon NPN TransistorFinal RF Power Output
The 2SC2092 is a silicon NPN transistor in a TO-220type case designed for use in medium power outputamplifier stages such as citizen band communicationsequipment.
B C E
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous Peak
3A5A
Collector Power Dissipation (TA = +25°C), PD 1.2WCollector Power Dissipation (TC = +50°C), PD 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 80 - - V
Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 40V IE = 0 - - 10 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 10 µA
DC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200
-
Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 V
Base-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 V
Current Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - MHz
Output Capacitance Cob VCB = 10V, f = 1MHz 25 - -
Power Output PO VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 - - W
Collector Efficiency 60 - - %
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2SC2094Silicon NPN Transistor
Final RF Power Output in VHF band mobile radioapplication.
E C E
The 2SC2094 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers.
E B E
Features:
High Power Gain: Gpe >/= 8,8dB (VCC = 13,5V, PO = 15W, f = 175MHz)●
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 18W, f = 175MHz
●
Application:
10 to 14 Watt output linear power amplifiers in VHF band.●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 40VEmitter-Base Voltage, VEBO 4,5VCollector Current, IC 3,5ACollector Power Dissipation (TA = +25°C), PD 2WCollector Power Dissipation (TC = +50°C), PD 30WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Rth-c 5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 40 - - V
-
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4,5 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 2 mA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 0,5 mA
DC Forward Current Gain hFE VCE = 10V, IC = 0,1A, Note 1 10 50 180
Power Output PO VCC = 13,5V, Pin = 2W, f = 175MHz 15 16 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC2166Silicon NPN TransistorFinal RF Power Output
The 2SC2166 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.
B C E
Features:
High Power Gain: Gpe >/= 13,8dB (VCC = 12V, PO = 6W, f = 27MHz)●
Application:
3 to 4 Watt Output Power Class AB Amplifier Applications in HF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 75VCollector-Base Voltage, VCBO 75VEmitter-Base Voltage, VEBO 5VCollector Current, IC 4ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 12,5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 10°C/WThermal Resistance, Junction-to-Ambient, RthJA 83°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
-
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 75 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 75 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 12V, IC = 100mA, Note 1 35 70 180
Power Output PO VCC = 12V, Pin = 0,25W, f = 27MHz 6 7,5 - W
Collector Efficiency 55 60 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC2314Silicon NPN Transistor
RF Power Output, Driver
The 2SC2314 are silicon transistors in a TO-126 typepackage designed for 27MHz CB Transceiver DriverApplications.
E C B
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO 75VCollector-Emitter Voltage (RBE = 150 Ohms), VCER 75VCollector-Emitter Voltage, VCEO 45VEmitter-Base Voltage, VEB 5VCollector Current, IC Continuous Peak
1.0A1.5A
Collector Dissipation (TA = +25°C), PD 750mWCollector Dissipation (TC = +25°C), PD 5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 40V, IE = 0 - - 1.0 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 1.0 µA
Collector-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 75 - - V
Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohms 75 - - V
V(BR)CEO IC = 1mA, RBE = Infinity 45 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 - - V
DC Current Gain hFE VCE = 5V, IC = 500mA 60 - 320
Gain-Bandwidth Product fT VCE = 10V, IC = 50mA 180 250 - MHz
-
Collector-Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA - 0.2 0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 50mA - 0.9 1.2 V
Output Capacitance Cob VCB = 10V, f = 1MHz - 15 25 pF
Output Power PO VCC = 12V, f = 27MHz, Pi = 35mW 1.0 1.8 - W
Collector Efficiency 60 - - %
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2SC2538Silicon NPN Transistor
RF Amplifier
The 2SC2538 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on VHF bandmobile radio applications.
B C E
Features:
High Power Gain: Gpe >/= 10dB (VCC = 13,5V, PO = 0,5W, f = 175MHz)●
Application:
Driver Amplifier Applications in VHF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 40VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,4ACollector Power Dissipation (TA = +25°C), PD 0,7WCollector Power Dissipation (TC = +25°C), PD 3WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 157°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
-
Collector Cutoff Current ICBO VCB = 15V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 200 µA
DC Forward Current Gain hFE VCE = 10V, IC = 500mA, Note 1 10 80 300
Power Output PO VCC = 13.5V, Pin = 50mW, f = 175MHz 0,5 0,6 - W
Collector Efficiency 45 55 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC3133Silicon NPN TransistorFinal RF Power Output
The 2SC3133 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.
B E C
Features:
High Power Gain: Gpe >/= 14dB (VCC = 12V, PO = 13W, f = 27MHz)●
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 16W, f = 27MHz
●
Application:
10 Watt Output Power SSB Amplifier Applications in HF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 70VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/WThermal Resistance, Junction-to-Ambient, RthJA 83,3°C/W
-
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = Infinity 25 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 500 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 500 µA
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180
Power Output PO VCC = 12V, Pin = 0,5W, f = 27MHz 13 16 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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2SC3299Power Amp Driver, Output Switch
The 2SC3299 are silicon transistors in a TO-220 typepackage designed for general purpose poweramplification and switching such as output or driverstages in applications such as switching regulators,converters, and power amplifiers.
B C E
Features:
Low Collector-Emitter saturation Voltage●
Fast Switching Speeds●
Complementary Pairs Simplifies Design●
Absolute Maximum Ratings:Collector-Emitter Voltage, VCEO 80VEmitter-Base Voltage, VEB 5VCollector Current, IC Continuous Peak (Note 1)
10A20A
Total Power Dissipation (TC = +25°C), PD 50WTotal Power Dissipation (TA = +25°C), PD 1.67WOperating Junction Temperature Range, TJ -55° to +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 2.5°C/WThermal Resistance, Junction-to-Ambient, RthJA 75°C/WLead Temperature (During Soldering, 1/8" from case, 5sec), TL +275°C
Note 1. Pulse Width
-
OFF Characteristics
Collector Cutoff Current ICES VCE = 80V, VBE = 0 - - 10 µA
Emitter Cutoff Current IEBO VEB = 5V - - 100 µA
ON Characteristics
DC Current Gain hFE VCE = 1V, IC = 2A, TJ = +25°C 60 - -
VCE = 1V, IC = 4A, TJ = +25°C 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 400mA - - 1.0 V
Base-Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 800mA - - 1.5 V
Dynamic Characteristics
Collector Capacitance Ccb VCB = 10V, ftest = 1MHz - 130 - pF
Gain Bandwidth Product fT IC = 500mA, VCE = 10V, f = 20MHz - 50 - MHz
Switching Times
Delay and Rise Time td + tr IC = 5A, IB1 = 500mA - 300 - ns
Storage Time ts IC = 5A, IB1 = IB2 = 500mA - 500 - ns
Fall Time tf - 140 - ns
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2SC4137Power Amp Driver
The 2SC4137 is a High-Gain Amplifier Transistor forHigh-Frequency.
Features:
High DC Current Gain
Absolute Maximum Ratings:Collector-Emitter Voltage, VCEO 20VEmitter-Base Voltage, VEB 6VCollector Current, IC Continuous 100mA DCTotal Power Dissipation (TC = +25°C), PD 4WOperating Junction Temperature Range, TJ -55° to +150°CStorage Temperature Range, Tstg -55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector Cutoff Current ICES VCE = 15V, VBE = 0 - - 0,5 µA
Emitter Cutoff Current IEBO VEB = 6V - - 0,5 µA
DC Current Gain hFE VCE = 3V, IC = 10mA 820 - 2700
Transition frequency fT VCE = 10V, IC = 10mA - 400 - MHz
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KTC1006Silicon NPN Transistor
The KTC1006 is a silicon NPN epitaxial planar typetransistor designed for CB tranceiver TX driveramplifier application.
E C B
Features:
High Power Gain●
Wide Area of Safe Operation.●
Application:
Recommended for Driver Stage Application of AM Transmitter.●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 80VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC 800mACollector Power Dissipation (TC = +50°C), PD 1WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 60V IE = 0 - - 0,1 µA
Collector Cutoff Current ICER VCB = 80V RBE = 220ohm - - 0,1 µA
DC Forward Current Gain hFE VCE = 2V, IC = 150mA 100 - -
Transition Frequency fT VCE = 5V, IC = 500mA - 150 - MHz
-
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KTC1969Silicon NPN TransistorFinal RF Power Output
The KTC1969 is a silicon NPN triple diffused typetransistor designed for CB tranceiver TX finalamplifier application and HF transceiver application.
B C E
Features:
High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz)●
Wide Area of Safe Operation.●
Application:
Recommended for Output Stage Application of AM 10W Transmitter.●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V
-
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 10 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 55 - 180
Transition Frequency fT VCE = 5V, IC = 500mA 100 - - MHz
Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 - - W
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KTC2078Silicon NPN TransistorFinal RF Power Output
The KTC2078 is a silicon NPN triple diffused typetransistor designed for CB tranceiver TX finalamplifier application and HF transceiver application.
B C E
Features:
High Power Gain●
Wide Area of Safe Operation.●
Application:
Recommended for Output Stage Application of AM 4W Transmitter.●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 80VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 4VCollector Current, IC 4ACollector Power Dissipation (TC = +50°C), PD 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 80 - - V
-
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 10 µA
DC Forward Current Gain hFE VCE = 5V, IC = 0,5mA 100 - 200
Transition Frequency fT VCE = 5V, IC = 500mA 100 - - MHz
Power Output PO VCC = 12V, Pin = 0,3W, f = 27MHz 4 - - W
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MRF260Silicon NPN Transistor
RF Power Output
The MRF260 is a silicon NPN epitaxial planer typetransistor designed for 136-174MHz RF poweramplifiers on VHF band mobile radio applications.
B E C
Features:
High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)●
Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz
●
Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 12ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 12.5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 10°C/WThermal Resistance, Junction-to-Ambient, RthJA 83°C/W
-
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 500 µA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µA
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180
Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 6 7 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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MRF262Silicon NPN Transistor
RF Power Output
The MRF262 is a silicon NPN epitaxial planer typetransistor designed for 136-174MHz RF poweramplifiers on VHF band mobile radio applications.
B E C
Features:
High Power Gain: Gpe >/= 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)●
Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz
●
Application:
10 to 14 Watt Output Power Amplifier in VHF Band Mobile Radio Applications●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 3.5ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 25WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Junction-to-Case, RthJC 6°C/WThermal Resistance, Junction-to-Ambient, RthJA 100°C/W
-
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 1000 µA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µA
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180
Power Output PO VCC = 13.5V, Pin = 2.5W, f = 175MHz 14 15 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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MRF475Silicon NPN TransistorFinal RF Power Output
The MRF475 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.
B C E
Features:
High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz)●
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz
●
Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/WThermal Resistance, Junction-to-Ambient, RthJA 73.5°C/W
-
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180
Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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MRF476Silicon NPN TransistorFinal RF Power Output
The MRF476 is a silicon NPN transistor in a TO220type case designed for use in high power outputamplifier stages such as citizen band communicationsequipment.
B C E
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous Peak
3A5A
Collector Power Dissipation (TA = +25°C), PD 1.2WCollector Power Dissipation (TC = +50°C), PD 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 80 - - V
Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 40V IE = 0 - - 10 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 10 µA
DC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200
-
Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 V
Base-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 V
Current Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - MHz
Output Capacitance Cob VCB = 10V, f = 1MHz 25 - -
Power Output PO VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 - - W
Collector Efficiency 60 - - %
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MRF485Silicon NPN TransistorFinal RF Power Output
The MRF485 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications.
Features:
High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz)●
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz
●
Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band●
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/WThermal Resistance, Junction-to-Ambient, RthJA 73.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
-
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180
Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 - W
Collector Efficiency 60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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MS1307MOSFET
N-Channel Power MOS-FET
The MS1307 is a MOS power N-Channel FET in aTO-220 type package designed for RF powerapplications.
G D S
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Transistor Database
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2N109 GE-P 35V 0.15A 0.165W | 2N1304 GE-N 25V 0.3A 0.15W 10MHz 2N1305 GE-P 30V 0.3A 0.15W 5MHz | 2N1307 GE-P 30V 0.3A 0.15W B>60 2N1613 SI-N 75V 1A 0.8W 60MHz | 2N1711 SI-N 75V 1A 0.8W 70MHz 2N1893 SI-N 120V 0.5A 0.8W | 2N2102 SI-N 120V 1A 1W 50 2N2223A 2xSI-N 100V 0.5A 0.6W >50 | 2N2243A SI-N 120V 1A 0.8W 50MHz 2N2369A SI-N 40V 0.2A .36W 12/18ns | 2N2857 SI-N 30V 40mA 0.2W >1GHz 2N2894 SI-P 12V 0.2A 1.2W 60/90ns | 2N2905A SI-P 60V 0.6A 0.6W 45/100 2N2906A SI-P 60V 0.6A 0.4W 45/100 | 2N2907A SI-P 60V 0.6A 0.4W 45/100 2N2917 SI-N 45V 0.03A >60Mz | 2N2926 SI-N 25V 0.1A 0.2W 300MHz 2N2955 GE-P 40V 0.1A 0.15W 200MHz | 2N3019 SI-N 140V 1A 0.8W 100MHz 2N3053 SI-N 60V 0.7A 5W 100MHz | 2N3054 SI-N 90V 4A 25W 3MHz 2N3055 SI-N 100V 15A 115W 800kHz | 2N3055 SI-N 100V 15A 115W 800kHz 2N3055H SI-N 100V 15A 115W 800kHz | 2N3251 SI-P 50V 0.2A 0.36W 2N3375 SI-N 40V 0.5A 11.6W 500MHz | 2N3439 SI-N 450V 1A 10W 15MHz 2N3440 SI-N 300V 1A 10W 15MHz | 2N3441 SI-N 160V 3A 25W POWER 2N3442 SI-N 160V 10A 117W 0.8MHz | 2N3495 SI-P 120V 0.1A 0.6W>150MHz 2N3502 SI-P 45V 0.6A 0.7W 200MHz | 2N3553 SI-N 65V 0.35A 7W 500MHz 2N3571 SI-N 30V 0.05A 0.2W 1.4GHz | 2N3583 SI-N 250/175V 2A 35W>10MHz 2N3632 SI-N 40V 0.25A 23W 400MHz | 2N3646 SI-N 40V 0.2A