rf power transistor products gan update - richardson...
TRANSCRIPT
RF Power Transistor Products GaN Update
May 2012
GaN Power Technology Solutions
Diverse Solutions for Multiple Applications • Pre-Matched Power Transistors
– Radar & Avionics • Unmatched Wideband Devices
– Milcom, EW & Wideband Apps. • Smart Pallet and Multi-Chip Modules
– Radar, Satcom & Commercial Apps. • Large Signal Load Pull Models for Design Optimization
M/A-COM Tech GaN Advantage • GaN on SiC Substrate with Excellent Thermal Performance
– MTTF > 600 yrs @ 200C Channel Temp • 0.5 micron depletion mode HEMT process • High breakdown voltage of 175V
– Very Rugged Performance – High Power & Efficiency
• Class AB bias
• Commercial classification for many parts
Plastic QFN GaN Power Devices Highest Performance for Lowest Cost!
Flange Power Transistors & GaN Power Smart Pallet
MAGX-000025-120000 Transistor
0 20 40 60 80
100 120 140 160 180
0 1 2 3 4 5 6
Pout
(W)
Pin (W)
CW Pout vs Pin 2.5 GHz (50V)
0
10
20
30
40
30 100 500 1500 2500
Gai
n (
dB
)
Frequency (MHz)
Small Signal Gain vs Frequency (single point optmized)
Applications: General purpose for pulsed or CW applications • Commercial Wireless Infrastructure • WCDMA, LTE, WIMAX • Civilian and Military Radar • Military and Commercial Communications • Public Radio • Industrial, Scientific and Medical • SATCOM • Instrumentation • Avionics
MAGX-001214-425L00 L-Band Transistor
Features • L-Band Pulsed Radar • Pout > 425W • Gain = 20dB • Efficiency = 60%
MAGX-002735-120L00 S-Band Transistor
Features • S-Band Radar • Pout > 120W • Gain = 12dB • Efficiency = 50% • 800MHz Bandwidth
MAPG-002729-600L0S S-Band Radar Smart Pallet
Features • S-Band Radar Smart Pallet • Single +50V supply • Integrated Bias & Sequencing • Pulse Blanking Option • Programmable Bias • Pout > 600W • Gain = 14dB
Plastic DFN packaged GaN for Wideband applications
July 6, 2012
8
5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 105.0
2 3 4 5 6 7 8 9
10 11 12 13 14 15 16 17 18 19 20 21 22
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Po
wer
Out
put (
dBm
)
Pow
er G
ain
(dB
)
Power Input (dBm)
Power Out (W) & Gain (dB) vs Power Input (dBm) - 1100MHz to 1500MHz (3mS/10%)
Gp (dB)_1100
Gp (dB)_1200
Gp (dB)_1300
Gp (dB)_1400
Gp (dB)_1500
Pout (W) 1100
Pout (W) 1200
Pout (W) 1300
Pout (W) 1400
Pout (W) 1500
Demonstrated >100W of Power in Pulsed applications in single 3X6mm DFN. All lumped matching used
Features • Low Cost Plastic DFN • Unmatched for multi octave applications • DC – 3.5GHz Operation • Pout = 90W Peak • Gain = 14 – 30 dB
Qualification
– Phase 1 • Phase 1 qualification successfully
completed
• Tested in accordance with MIL-
PRF-19500 Grps A, B, and C
• MIL-PRF-19500 Grps A, B, and C
are a combination of electrical and
environmental tests. No failures
during test.
– Phase 2 • 5 temperature DC step-stress test
• 3 temperature RF life test
• Arrhenius plot of life test data
generated (MTTF vs. device temp)
>600 years (5M hours) @ 200C >114 years (1M hours) @ 220C
Qualification
High Temperature RF Test Fixture
30W CW Transistor Used for Reliability Test
Available in Microwave Journal Online white papers Sponsored by Richard RFPD
GaN Summary
The M/A-COM Tech GaN Product Portfolio continues to grow
• Increasing number general purpose transistors • Higher power L and S-Band transistors • Smart pallet products • Lower cost DFN transistors