rreact () reliability and radiation effects on advanced cmos technologies a. paccagnella et al
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RREACT (http://rreact.dei.unipd.it)Reliability and Radiation Effects on Advanced CMOS Technologies
A. Paccagnella et al.
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http://rreact.dei.unidp.it
Chi siamo …
• Prof. Alessandro Paccagnella
• Assegnisti di ricerca: Giorgio Cellere, Simone Gerardin
• Dottorandi: Marta Bagatin, Alberto Gasperin, Alessio Griffoni, Andrea Manuzzato, Paolo Rech, Marco Silvestri
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http://rreact.dei.unidp.it
… e cosa facciamo
Stress elettrico:
riproduce in maniera accelerata l’invecchiamento
dei chip
Irraggiamento:emula pioggia continua di
particelle che colpiscono i chip causando danni permanenti e
non
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http://rreact.dei.unidp.it
Interesse Industriale
“Soft errors have become a huge concern in advanced computer chips because, uncorrected, they produce a failure rate that is higher than all the other reliability mechanisms combined!”
R. Baumann, Fellow, IEEE
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http://rreact.dei.unidp.it
Ricerca internazionale
Conferenze a cui abbiamo partecipato negli ultimi 3-4 anni
Facility attualmente utilizzate
From Jyvaskyla, Finland to
Honolulu, Hawaii
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http://rreact.dei.unidp.it
Collaborazioni
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http://rreact.dei.unidp.it
Strumenti e dispositivi avanzati
• Acceleratori di particelle (TANDEM, ISIS, CN, AN2000)
• Microscopia a forza atomica (C-AFM, SCM, KFPM)
• Strumenti capaci di misurare correnti di qualche fA (HP4156C)
• Transistor: FinFETs, high-k, strain engineering
• Non volatili: SONOS, PCM, RRAM, nXTL
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http://rreact.dei.unidp.it
SIRAD (Legnaro)
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http://rreact.dei.unidp.it
SIRAD (2)
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http://rreact.dei.unidp.it
ISIS (Oxford, UK)
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http://rreact.dei.unidp.it
ISIS (2)
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http://rreact.dei.unidp.it
ISIS (3)
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http://rreact.dei.unidp.it
HIF (Belgium)
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HIF (2)
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http://rreact.dei.unidp.it
Affidabilità ed effetti di radiazione
dal componente elementare
al circuito complesso:
MOSFET
Celle di memoria non volatili
Circuiti
Memorie
Microprocessori/microcontrollori
FPGA
Argomenti di tesi
SPICE,VHDL,
ASSEMBLY,C/C++
MISURE NANOELETTRO-NICHE, FISICA
DEI DISPOSITIVI
IRR
AG
GIA
ME
NT
I,
TE
ST
DI
VIT
A
AC
CE
LE
RA
TI
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http://rreact.dei.unidp.it
CMOS avanzato
Analisi degli effetti delle scariche elettrostatiche su ossidi di gate ultra sottili tramite misure di rumore in bassa frequenza
Prove accelerate di vita in temperatura su dispositivi FinFET
Analisi delle interazioni tra il danno indotto dalla radiazione ionizzante e i fenomeni di usura dovuti a elettroni caldi e negative bias temperature instability
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http://rreact.dei.unidp.it
Celle di memoria non-volatili
Caratterizzazione elettrica e affidabilistica di celle SONOS (basate sull’intrappolamento di carica in uno strato dielettrico)
Caratterizzazione elettrica e affidabilistica di celle Resistive RAM (basate sul cambio di resisitività di film sottili)
Caratterizzazione elettrica e affidabilistica di celle Phase Change Memories (basate sull’amorfizzazione/cristallizazione di un elemento di memoria)
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http://rreact.dei.unidp.it
Affidabilità di circuiti
Studio dell’impatto circuitale delle degradazione dei transistor dovuta a fenomeni di elettroni caldi, NBTI e breakdown dell’ossido di gate
Studio dell’impatto circuitale della degradazione dei transistor indotta dalla radiazione ionizzante
Studio dell’impatto circuitale di transitori indotti da particelle ionizzanti
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http://rreact.dei.unidp.it
Memorie
Analisi del tasso di errore indotto da particelle alfa in funzione della dose ricevuta in memorie SRAM commerciali
Dipendenza del tasso di errore indotto da particelle alfa in funzione dell’invecchiamento in memorie SRAM commerciali
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http://rreact.dei.unidp.it
Microprocessori
Valutazione della sensibilità a soft error indotti da particelle alfa su core di microprocessore ARM
Valutazione della sensibilità a soft error indotti da particelle alfa su core di microcontrollori
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http://rreact.dei.unidp.it
FPGA
Realizzazione di una piattaforma di fault injection per le FPGA della famiglia Virtex-4 di Xilinx
Realizzazione di un setup sperimentale per esperimenti di irraggiamento su FPGA Xilinx
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http://rreact.dei.unidp.it
Contattateci
[email protected] specificando
l’area di interesse:
1. MOSFET
2. Celle di memoria non volatili
3. Circuiti
4. Memorie
5. Microprocessori
6. FPGA