RUMOH OF

SEMICONDUCTOR INTERFflCESPROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE

Forschungszentrum Julich 14 - 18 June 1993

Editors

Bruno Lengeler HansLiithForschungszentrum Julich, Germany

Winfried MdnchUniversitat Duisburg, Germany

Johannes PollmannUniversitat Miinster, Germany

World ScientificSingapore • New Jersey • London • Hong Kong

IX

CONTENTS

Preface

Committees vn

Sponsors viii

I. Clean Semiconductor Surfaces 1

1. Core levels spectroscopy of the Si surfacesR. Gunther, A. Taleb-Ibrahimi, K. Hricovini,P. Dumas, Y. Chabal and Y. Peiroff 3

2. Surface X-ray diffraction on semiconductorsR. L. Johnson and R. Feidenhans'l 11

3. Quasiparticle bandstructures for surfaces of covalent materialsC. Krefi, M. Fiedler and F. Bechstedi 19

4. New quantitative applications of reflection-high-energy-electron-diffraction-intensity measurements

M. I. Larsson and Goran V. Hansson 23

5. Transition temperature change of the Si( l l l ) lxl-7x7phase transition observed in extremely high vacuum

K. Tsukui, K. Endo, R. Hasunuvia, N. Yagi,H. Aihara, T. Osaka and I. Ohdomari 27

6. First principles DMol cluster calculations of theGe(100) surface

L. Spiess, A. J. Freeman and P. Soukiassian 31

7. The unoccupied electronic structure of Ge(lll)-c(2x8)studied by angle-resolved inverse photoemission

M. Boehme, L. Kipp, R. Manzke and M. Skibowski 35

8. Influence of additional illumination on UPS spectraofGaAs(lOO) 39

K.-J. Tombrink and H. Merz

9. Two-photon photoemission: probing the conduction-bandstates in GaAs(lOO)

R. Jacquemin, K.M. Colbow, H. Ervens, 0. Hollricherand W. Eberhardt 43

10. Characterization of elastic properties of dislocations onGaAs(OOl) surfaces by scanning tunneling microscopy

Ph. Ebert, M. Simon and K. Urban 47

11. Observation of defects in Zn-diffused GaAs by scanningtunneling microscopy

M. Simon, C. Dzeja, Ph. Ebert, H.-G. Hetiwer,W. Jdger, A. Rucki and K. Urban 49

12. Atomic defects on III-P(llO) semiconductor surfaces observedby STM

Ph. Ebert, M. G. Lagally and K. Urban 53

13. Reflectance anisotropy of reconstructed semiconductor surfaces5. J. Morris and C. C. Matihai 57

14. Plasmon enhancement of photoemission from semiconductorsurface states

C.-H. Solterbeck, D. Samuelsen, A. Yang and W. Schattke 61

15. Lineshape modulation in Auger emission from InP(llO) byscattering-interference of the primary beam

A. di Bona, S. Valeri and S. D'Ambrosio 65

16. STM studies on InSb(TTT)-(3x3)-reconstructed surfacesL. Seehofer, I. Krivorotov and R. L. Johnson 69

17. X-ray structure analysis of the InSb(lll)-(3x3) reconstruction/. Wever, H. L. Meyerheim, V. Jahns, D. Wolf,W. Moriiz and H. Schulz 73

18. Structural study of CdTe (001) surface by XPS and GIXDV. H. Eigens, S. Tatarenko, J. C. Klein, M. B. Venn,J. Cibert, K. Saminadayar, M. Sauvage-Simkinand R. Pinchaux 77

XI

19. Occupied surface states on CdTe(100)c(2x2)K.-U. Gawlik, J. Brigmann, S. Harm, R. Schnurpfeil,R. Manzke, M. Skibowski, B. J. Kowalski andB. A. Ortlowski 81

20. First-principles atomic and electronic structure calculationsof the ZnO (1010) surface

P. Schroer, P. Kruger and J. Pollmann 85

II. Adsorbates at Semiconductor Surfaces 89

1. Application of the Car-Parrinello method to adsorptionand diffusion processes at semiconductor surfaces

G. Brocks, P. J. Kelly and R. Car 91

2. In situ studies with the low energy electron microscopeR. M. Tromp, A. W. Denier van der Gon and M. C. Reuter 99

3. Dimer formation and electronic properties of orderedadlayers at Si(001): Results from local density theory

P. Kruger and J. Pollmann 108

4. Role of impurities in the structure of alkali metal/Si(100)-(2xl)surfaces

K. M. Schirm, P. S. Mangat, L. Spiess, J. A. Kubby,S. P. Tang, A. J. Freeman and P. Soukiassian 114

5. Lithium adsorption on Si(100)-(2xl) studied withangle-resolved inverse and direct photoemission

L. S. 0. Johansson, H. Bernhoff, D. Purdie and B. Reihl 118

6. Inverse photoemission studies of Sn/Si(100) interfacesV. Ghisalberti, M. Pedio, C. Oltaviani, M. Capozi,F. Lama, C. Quaresima and P. Perfetii 122

7. Optical spectra and electron energy structure of the(001) surface of diamond

V. I. Gavrilenko and A. I. Shkrebtii 126

XII

8. Influence of hydrogen adsorption on the electron energystructure and densities of states of Si(OOl) surface.Application to porous silicon

V. I. Gavrilenko, P. Vogl and F. Koch 130

9. The Si(001)-Sb interface studied by optical secondharmonic generation

/ . R. Power, P. E. Hansen and J. F. McGilp 134

10. Electronic structure of Si(100)-(2xl)+Sb surfacesA. Cricenti, C. Ottaviani, H. Bernhoff, D. Purdieand B. Reihl 138

11. Binding energies and energy barriers for Ni on Si(100)J. Gryko and R. E. Allen 142

12. First-principles study of hydrogen diffusion on Si(100)A. Vittadini, A. Selloni and M. Casarin 146

13. Ionization energy of hydrogen-terminated Si(l l l) andSi(001) surfaces

A. Stockhausen, T. U. Kampen, H. Nienhaus andW. Monch 150

14. Real time spectroscopic optical investigation of initialmetallic growth on silicon surfaces

R. Alameh, M. Roy and Y. Borensztein 154

15. Surface phonons of H:Si(lll)-(lxl)B. Sandfort, A. Mazur and J. Pollmann 158

16. The behavior of hydrogen on Ag-deposited H/Si(lll) andH/W(001) using a resonance nuclear reaction

M. Tsunoda, K. Fukutani, Y. Murata, H. Yamashita,K. Komaki and K. Kobayashi 162

17. Inverse-photoemission spectroscopy of the prototypicalSi(lll): As-(lxl) surface

S. Bouzidi, T. Angot, F. Coletti, J. M. Debever,J. L. Guyaux and P. A. Thiry 166

XIII

18. The formation of the indium-silicon(lll) interface:Ordered structures and interface states

H. Ofner, S. L. Sumev, Y. Shapira and F. P. Neizer 170

19. In situ investigations of the surface phases of Si(lll)-In:Electron transport properties

V. A. Gasparov, V. A. Grazhulis and V. V. Bondarev 176

20. Ionization energy in Si(lll)>/3 Ga and S i ( l l l ) v ^ Ag surfacesN. Safta, J.-P. Lacharme and C. A. Sebenne 182

21. The room temperature Ag/Si(lll)-(7x7) system studied inplan-view by TEM and STM

/. Vianey, A. Degiovanni, M. Hanbucken, A. Brodde,B. Rottger, R. Kliese and H. Neddermeyer 186

22. Surface states and surface-shifted core-levels of thePb-Si(lll)-(>/3 x y/3) interface 190

F. Bernardini and S. Ossicini

23. Are there surface states in iron disilicide epitaxial films?J. Chrost, J. J. Hinarejos, N. Capuj, C. Limones,J. Alvarez, E. G. Michel, A. L. Vazquez de Parga,J. de la Figuera, J. E. Prieto, C. Ocal and R. Miranda 195

24. Hydrogenation of MBE-grown GaAs(100)-c(4x4): A combinedHREELS-, UPS- and LEED-study

J. A. Schaefer, F. Stieiz, J. Woll, K. H. Bornscheuerand V. Polyakov 199

25. Thin antimony layers on GaAs(100)-(2x4): A photoemission,AES and LEED study

B. Lepine, F. Solal, G. Jezequel, U. Resch,Th. Miller, N. Esser, W. Richter, M. Larive,J. P. Landesman, A. Taleb-Ibrahimi and G. Indelkofer 203

26. A room temperature photoemission study of alkali metals onthe (110) surface of III-V semiconductors

M. Pedio, J. J. Paggel, N. Pangher and R. Cimino 207

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27. Alkali metal/GaAs( 110) interface formation studied byhigh-resolution electron-energy-loss spectroscopy

R. Compano, U. del Pennino and C. Mariani 211

28. Angle resolved photoemission studies of selenium treated (110)surfaces of GaAs and InP

T. Schroier, A. Chasse, I. Eckardt, K. Tiedtke,N. Wagner, D. R. T. Zahn, C. Nowak, A. Hempelmannand W. Richter 215

29. Ab initio calculation of the atomic and electronic structurefor Sb adsorbed on GaAs(llO)

W. G. Schmidt, B. Wenzien and F. Bechstedt 219

30. Electronic structure of the interface of GaAs(110)/Sb(xL)A. Bodicker and W. Schattke 223

31. Optical transitions at the clean and adsorbate covered GaAs,InP, GaP(llO) surfaces

A. I. Shkrebtii, R. Del Sole, P. Chiaradia,C. Goletti and W. Jian 227

32. Electron spectroscopy investigation of the Bi growth on GaSb(llO)P. Casarini, L. Gavioli, M. G. Betti and C. Mariani 231

33. Influence of Fe adsorption on the properties of cleanCdSexTei_x surfaces

B. A. Orlowski, J.-P. Lacharme, N. Safta and C. A. Sebenne 235

34. Study of contamination mechanisms at silicon surfaces duringwet chemical processes 239

H. Schafer and K. J. Budde

III. Metal-Semiconductor Interfaces 243

1. Tuning the Fermi level position through nearly thewhole gap at a non-reactive metal-silicon interface

V. Yu. Aristov, G. Le Lay, K. Hricovini, A. Taleb-Ibrahimi,J. Osvald, P. Dumas, J. E. Bonnet, R. Gunther andG. Indlekofer 245

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2. Electronic transport of Schottky contacts in the presenceof barrier inhomogeneities

U. Rau and J. H. Werner

3. Electronic structure determination of ion beam synthesizedtransition metal silicides using photon-in photon-outspectroscopies

5. Eisebitt, T. Boske, J.-E. Rubensson, J. Kojnok,W. Eberhardt, R. Jebasinski, S. Mantl, P. Skytt,J.-E. Guo, N. Wassdahl, J. Nordgren and K. Holldack

4. Intermixing depth induced by initial chemical reactionin metal-semiconductor interfaces

J. Yuhara, R. Ishigami and K. Morita

5. Surface sensitive X-ray investigations on CoSi2layers in Si produced by ion-beam synthesis

D. Bahr, M. Miller, W. Press, J. Siettner,R. Jebasinski and S. Mantl

6. Interstitial Pt in crystalline Si under thin (< 12 nm)overlayers of Pt and PtSi

Th. Hierl and M. Schulz

7. Systematic polar-dependent Cu 1,2,3 XAS investigation ofthe Cu/Si(lll)-(7x7) interface

M. Sancrotii, S. Iacobucci, M. Montagnoli,M. Sacchi and G. Rossi

8. The Fe/Si( l l l ) interface annealed at 500°C studied byX-ray diffraction

A. Waldhauer, N. Jedrecy, M. Sauvage-Simkinand R. Pinchaux

9. The role of the interfacial step height at NiSi2/Si(lll)interfaces as a kinetic reaction barrier during theNiSi2 formation by thin film solid state reaction

D. Hesse, P. Werner, J. Heydenreich andR. Mattheis

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253

257

261

265

269

273

277

10. Interdiffusion and reaction processes in the TiNiAg contactsystem on silicon

F. Fenske, H. Lange and B. Selle 281

11. Atomic and electronic structure of a two-dimensionalepitaxial Er silicide on Si ( l l l ) 285

C. Pirri, P. Wetzel, L. Stauffer, D. Bolmontand G. Gewinner 285

12. Effects of composition and strain on W/Sii_xGex Schottky diodesV. Aubry, F. Meyer, P. Warren and D. Dutartre 289

13. GaAs(100)-As rich surfaces: 2x4 reconstruction andSchottky barrier formation

R. Rincon, R. Saiz-Pardo, R. Perez and F. Flores 293

14. The formation of a Schottky barrier: Na on GaAs(llO)M. Heinemann and M. Scheffler 297

15. Chemisorption of Al, Ga, P, As and Sb on the GaAs(llO) surfaceR. Saiz-Pardo, R. Rincon, R. Perez and F. Flores 301

16. Influence of halogen interlayers on electronic and chemicalproperties of Ag/GaAs(110) contacts

D. Troosi, K. Stralhausen and W. Monch 305

17. The Ge/Pd/n-GaAs ohmic contact interface studied byback-side optical analysis

J. Watte, K. Wuyts, R. E. Silverans, M. van Hove,G. Borghs and H. Minder 309

18. Chemical reaction and inter-diffusion at the Mn/GaAs(100)interface

M. Zhang, M. Xu, G. S. Dong, X. G. Zhu,X. Y. Hou, X. Jin and X. Wang 313

19. Room temperature interaction of the AuGeNi metallizationwith GaAs

B. Kovdcs, L. Dobos, B. Pecz, G. Vinczeand Zs. J. Horvdth 317

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20. Growth mode and interface formation of indium onGaAs(001)-(2x4)

U. Resch-Esser, N. Blick, N. Esser, Th. Weminghaus,U. Rossow, W. Richier and Y. S. Raplis 321

21. Schottky contacts and ^-doping control of epitaxial Al onMBE grown GaAs(l l l )B surfaces

T.-H. Shen, D. A. Woolf, J. Morris and R. H. Williams 325

22. Metal-GaAs interface modification by octadecyl thiolself-assembled monolayer

0. S. Nakagawa, C. W. Sheen, D. L. Allara and S. Ashok 329

23. Hot-electron transport in ballistic-electron emission microscopy:Influence of impact ionization

A. Bauer, M. T. Cuberes, M. Prietsch, G. Kaindland R. Ludeke 333

24. Soft X-ray photoemission study of Cs and Rb/p- and n-typeGaSb(llO) interfaces at room temperature

K. M. Schirm, P. S. Mangat, L. Soonckindt andP. Soukiassian 337

25. Schottky barrier height of InP treated with phosphine plasmaand subsequent selenium vapor

T. Sugino, K. Goda, T. Sumiguchi, K. Nomotoand J. Shirafuji 341

26. Kinetic nucleation of Gd-silicide films in lateral growthgeometry

G. Molndr, G. Peio and Z. E. Horvdth andE. Zsoldos 345

27. Probing the magnetic properties of a high-Tc superconductorusing a two-dimensional electron gas

A. E. Cornish, T.-H. Shen, M. Elliott, R. H. Williams,S. A. Clark, C. T. Lin, W. Y. Liang, D. A. Richie,J. E. F. Frost and G. A. C. Jones 349

XVIII

IV. Insulator-Semiconductor Interfaces 353

1. The growth and the decomposition of thin oxide layerson Si(lll)-(7x7) surfaces, investigated in-situ by STM

A. Feltz, U. Memmert and R. J. Bekm 355

2. Optical spectroscopy of strained Si-Si bonds at SiSiO2interfaces by second-harmonic and sum-frequency generation

W. Daum, H.-J. Krause, U. Reichel and H. Ibach 361

3. Behaviour of minority carriers in thermally stimulatedstudies of the Si-SiO2 interface

V. S. Lysenko, Y. V. Gomeniuk, I. N. Osiyuk andI. P. Tyagulski 365

4. Frequency dispersion and relaxation effects of interfacestates at Si/SiO2-interfaces

N. D. Sinh and H. Flietner 369

5. The InGaAs/SiO2 interface investigated byangle resolved XPS and ellipsometry

B. Gruska, K. Wandel and M. Procop 373

6. XPS depth profiling applied to interface analysis ofSi/SiOxNy prepared by low-energy ion implantation

O. Benkherourou and J. P. Deville 377

7. Role of potassium in silicon oxynitride/siliconinterface formation

M. Riehl-Chudoba, L. Surnev and P. Soukiassian 381

8. Initial stage of oxidation of hydrogen-terminatedsilicon surfaces

T. Hatiori, H. Nohira, K. Ohishi, Y. Shimizuand Y. Tamura 385

9. Stimulated formation and interface S-I propertiesof the buried insulating layers

V. G. Litovchenko, B. N. Romanjuk and A. A. Efremov 389

10. Formation of nitride layer on InP by microwave grow dischargeK. Kamimura, T. Kubo and Y. Onuma 393

XIX

11. Oxidation of InP using electron cyclotron resonanceoxygen plasmas

M. P. Besland, J. Joseph, P. Louis, J. B. Goure,C. Santinelli and G. Hollinger 397

12. Core level photoemission and absorption study of the initialstep of growth of rare earth fluorides on Si(lll)

S. Cramm, C. Malten, K. M. Colbow and W. Eberhardt 401

13. Analysis of epitaxial CaF2 layers on Si(lll) using impurityluminescent probes, X-ray standing waves, and X-raydiffractometry

M. V. Kovalchuk, A. Y. A. Kreines, N. L. Yakovlev,N. S. Sokolov and G. Cappuccio 405

14. Core level spectroscopy at an heteroepitaxial ionic-covalentsemiconductor interface: CiCl/GaP

W. Chen, P. Mangat, P. Soukiassian and A. Kahn 409

15. Lattice matched insulating trifluoride layers on group IV andIII-V semiconductors

L. C. Jenkins, C. L. Griffiths, J. Richards andR. H. Williams 413

16. Photoelectrochemical investigations of the structural andelectronic properties of single crystal TiO2 and anodicallyoxidized titanium

5. Preusser, U. Slimming and S. Tokunaga 417

V. Heterostructures: Structural Properties 421

1. Atomic self organization on vicinal surfacesP. M. Petroff, A. Lorke and M. Krishnamurthy 423

2. Delta-doping of thin Si filmsH.-J. Gossmann 431

3. Epitaxial FeSi2/Si heterostructuresA. Rizzi 439

4. The 0 FeSi2 epitaxy on Si(lll)N. Jedrecy, Y. Zheng, A. Waldhauer, M. Sauvage-Simkinand R. Pinchaux 447

5. HRTEM study of FeSi2/silicon heteroj unctions/. Berbezier, S. Giorgio and C. D'Anterroches 451

6. Fe-silicides formed with molecular beam epitaxy andstudied with conversion electron Mossbauer spectroscopy

T. Kobayashi, J. Dekosier, S. Degroote, M. H. Langelaar,L. Niesen and G. Langouche 455

7. Epitaxial growth of a-FeSi2 on Si( l l l ) at low temperatureJ. Chevrier, P. Stocker, Le Thanh Vinh, J. M. Gayand J. Derrien 459

8. Epitaxial Si/a-FeSi2 /Si(lll) heterostructuresfabricated by molecular beam allotaxy (MBA)

0. Skeide, K. Radermacher, H. L. Bay, G. Crecelius,D. Guggi, D. Gerihsen, Ch. Dicker, S. Mestersand S. Mantl 463

9. Characterization of CoSi2/Si/CoSi2 heterostructures on Si( l l l )by scanning tunneling microscopy

H. Sirringhaus, C. Schwarz and H. von Kdnel 467

10. Phase transitions in epitaxial silicidesC. Schwarz, S. Goncalves-Conto, E. Miller-Gubler,H. Sirringhaus and H. von Kdnel 471

11. Formation of lattice matching interfacial dislocation networkin surfactant mediated growth of Ge on Si( l l l ) by anin-situ SPA-LEED study

M. Horn-von Hoegen 475

12. Initial growth mode and crystallographic tilting in theGaAs-on-Si system

F. Riesz, J. Varrio, A. Pesek and K. Lischka 479

XXI

13. Extension of van der Waals epitaxy to three-dimensionalsilicon substrate

M. Eddrief, Le Thanh Vinh, C. Sebenne, A. Sacuto,H. Benisty, S. Debrus and M. Balkanski 482

14. The interaction of CdTe and Te with Si(100) and the surfactantaided growth of germanium for CdTe substrates

M. R. Bennett, J. W. Cairns, R. H. Williamsand A. A. Cafolla 486

15. MBE growth of strained Sii_xGex films on Si(001)-2xltested by X-ray and UV photoelectron spectroscopies,X-ray photoelectron diffraction LEED and X-ray diffraction

M. Stoehr, D. Aubel, M. Diani, J. L. Bischoff,L. Kubler, D. Bolmont, B. Fraisse and R. Fourcade 490

16. Boron segregation in Si- and Sii_xGex layers duringMBE-growth

D. Kruger, G. Lipperi, R. Kurps, E. Bugiel,H. J. Osten and H. P. Zeindl 498

17. Growth behaviors of the initial Ge two-dimensional layers on(100)Si substrates and photo-irradiation effects by GeH4source molecular beam epitaxy

M. Okada, Y. Koide, S. Zaima and Y. Yasuda 502

18. Real-time Raman monitoring of ZnSe growth on GaAs(llO)D. Drews, M. Langer, W. Richter and D. R. T. Zahn 506

19. GaAs(OOl) and InP(OOl) surfaces under MOVPE conditionsstudied by reflectance anisotropy spectroscopy (RAS)

K. Ploska, F. Reinhardl, M. Zorn, J. Jonsson,K. C. Rose, W. Richter and P. Kurpas 510

20. LEEM and MEIS studies of Ge growth on GaAs(OOl)J. Falia, M. Copel, M. C. Reuter, F. K. LeGouesand R. M. Tromp 514

21. Heteroepitaxy of GaSe on GaAs(OOl) surfaceK. Fujita, T. Izumi, K. Ohsaki, T. TamboC. Talsuyama 518

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22. Heteroepitaxial growth of InAs on GaAs(OOl) mediated bytellurium at the interface

V. H. Etgens, W. N. Rodrigues, M. Sauvage-Simkin,R. Pinchaux, G. Rossi, S. Tatarenko, P. H. Jouneauand G. Feuillet 522

23. Reactive MBE Growth of GaN on GaAsZ. Q. He, X. Y. Hou, X. M. Ding, Xun Wang,L. Y. Cheng, Y. Su and X. L. Shen 526

24. The formation of interfaces and crystal defects: A casestudy of InGaAs quantum wells on InP/Si(100)

M. Grundmann, A. Krost, F. Heinrichsdorff,D. Bimberg and H. Cerva 530

25. Interface roughness and 3D growth mode of strainedInxGai_xAs/Alo.4sIno.52As structures studied byoptical spectroscopy

T. Benyattou, M. A. Garcia Perez, Y. Baltagi,S. Moneger, A. Tabaia, C. Bru, G. Guilloi,M. Gendry, V. Drouot and G. Hollinger 534

26. Investigation of the interface abruptness of MOVPE-grownIno.53Gao.47As/InP multi quantum wells byRaman spectroscopy

J. Finders, D. Gnoth, M. Keuter, J. Geurts,J. Woitok, A. Kohl, R. Miller and K. Heime 538

27. Investigation of buried InAs/GaAs heterointerfaces by X-rayinterference and X-ray standing waves

C. Giannini, S. Lagomarsino, L. Tapfer, J. C. Boulliard,A. Taccoen, B. Capelle, M. Ilg, O. Brandtand K. Ploog 542

28. In situ Raman monitoring of III-V compound layer formationby interdiffusion of group III overlayers group V substrates

V. Wagner, D. Drews, N. Esser, W. Richter,D. R. T. Zahn and J. Geurts 546

XXIII

29. Determination of overlayer crystallinity, strain and orientationby Raman spectroscopy

V. Wagner, J. Geurts, M. Eube and J. Woiiok 550

30. Analysis of growth-induced interface structure in InGaAs/InPand InAsP/InP multiple quantum wells

R. Schwedler, A. Kohl, S. Brittner, Ch. Jaekel,K. Leo, H. Kurz, S. Juillaguet, J. Camasseland F. H. Baumann 554

31. Lateral localization in strained InGaAs/GaAs quantum wells/ . Sdnchez-Dehesa, F. Agullo-Rueda, J. Martinez-Pastor,A. Vinattieri, F. Meseguer, M. Colocci, R. Mayoral,J. A. Porto, C. Lopez, A. Marti-Ceschin, N. Grandjeanand J. Massies 558

32. AlAs/GaAs quantum well structures: Interface propertiesinvestigated by high-resolution transmission electronmicroscopy and photoluminescence spectroscopy

T. Walther, D. Gerthsen, R. Carius, A. Forsterand K. Urban 562

33. Interface roughness in GaAs/Alo.7Gao.3As/GaAs heterostructuresinvestigated by hard X-rays

U. Klemradt and B. Lengeler 566

34. Residual stress determination by reflectivity and X-ray diffractionin ZnSe/InP(001) and ZnSe/GaSb(001) heterostructures

M. Stoehr, M. Maurin, F. Hamdani, J. P. Lascaray,D. Barbusse, B. Fraisse and R. Fourcade 570

35. STM and RHEED investigations of PbSe and PbTe surfacesand the strain induced islanding of EuTe on PbTe

N. Frank, G. Springholz and G. Bauer 574

36. HREM, XPS and RHEED study of the formation ofultrathin ZnTe layers embedded in (001) CdTe

P. H. Jouneau, S. Tatarenko, G. Feuillet, M. Mamor,H. Mariette and K. Saminadayar 578

XXIV

37. Interfacial properties of n-GaAs in contact with non-aqueousmedia: Effect of crystal orientation

H. Cachet, J. Bruneaux, B. Ba, B. Fotouhi and0. Gorochov 582

VI. Heterostructures: Electronic Properties 587

1. Microscopic control of band offsets in semiconductorheterostructures

L. Sorba, G. Bratina, G. Biasiol and A. Franciosi 589

2. Photoluminescence from two-dimensional hole gasin Si/SiGe/Si double heterostructures

L. Vescan, R. Loo, A. Hartmann, U. Zasirow,A. Leuther, T. Schdpers, T. Sioica and H. Lith 597

3. Photoluminescence and scanning tunneling microscopyof Si Ge quantum well structures grown by Simolecular beam epitaxy

R. Buiz, Ch. Dieker, A. Hartmann, K. Schmidt,U. Zasirow and H. Lilh 601

4. Photoluminescence study of the band gap narrowingon strained B-doped SiGe/Si heterostructures grown on(100)Si

A. Souifi, G. Bremond, T. Benyattou, G. Guillot,D. Dutarire and P. Warren 605

5. Capture and emission of carriers in semiconductorquantum wells

M. Beer, K. Schmalz and I. N. Yassievich 609

6. Variational calculations of edge dislocations insemiconductor heterojunctions

M. Biagini and A. Catellani 613

7. Topography and local electronic structure ofepitaxial iron silicide on Si(lll)

H. Niehus, W. Raunau, T. Schilling and G. Comsa 617

8. Formation and electronic properties of semiconductingReSi2 films on S i ( l l l )

S. Kennou, T. A. Nguyen Tan and J. Y. Veuillen 621

9. A theoretical study of band offset modification atthe GaAs/AlAs interface employing Si interlayers

K. A. Saynor, J. M. Bass, C. C. Matthai, M. C. Payneand V. Milman 625

10. Interdiffusion effect in the band offset control by thininterlayers at semiconductor interfaces

P. Rodriguez-Hernandez, A. Munoz and A. Mujica 629

11. Electronic properties of n-AlxGai_xAs/GaAs/n-AlxGai_xAsdouble heterojunctions

C. D. Simserides and G. P. Triberis 633

12. Characterization of GaAs/AlAs interfaces with silicon interlayersB. Schmiedeskamp, T. Tappe, B. Heidemann, J. Schlosser,G. Haindl, U. Kleineberg, T. Albers and M. Neumann 637

13. Optical characterization of InAs/AlSb superlattices withdifferent interfaces

J. Spitzer, H. D. Fuchs, P. Etchegoin, A. Hopner,M. Ilg, M. Cardona, B. Brar and H. Kroemer 641

14. Magnetization studies in two-dimensional electron systemsM. Elliott, M. G. M. Harris, W. G. Herrenden-Harker,R. Shepherd, G. A. C. Jones, D. A. Ritchie,E. H. Linfield and M. Grimshaw 645

15. Linear behaviour of the surface phonon splitting inAlxGai_xAs Mixed Crystal

J.-L. Guyaux, P. A. Thiry, R. Sporken, Ph. Lambinand R. Caudano 649

16. Gallium segregation and band-offset at the GaAs(100)/AlAsheterostructure

R. Kohleick, A. Forsier and H. Liih 653

L

XXVI

17. VUV-optical properties of GaAs-AlAs superlattices0. Ginther, C. Janowitz, E. Jahne, G. Jungk,K. Ploog, T. Buslaps, R. L. Johnson and M. Cardona 656

18. Spatially indirect electronic transitions at the staggeredband line-up InAlAs/InP interface

J. Bohrer, A. Krost and D. Bimberg 660

19. The effective barrier heights of InAs/GaAs(lll)B andInAs/GaAs(100) interfaces

T. H. Shen, S. Hooper, D. Westwood, R. H. Williamsand J. Lapeyre 664

20. Direct measurement of conduction band offsets fromcurrent-voltage measurements of Schottky diodes

/. L. Morris, R. H. Williams and S. P. Wilks 668

21. XPS study of the InxGai_xAs/GaAs interfacesM. R. Bruni, S. Kaciulis, G. Maitogno, M. G. Simeone,S. Viticoli and F. Martelli 672

22. Spectroscopic ellipsometry: A useful tool to determine therefractive indices and to study interfaces of Ino.52Alo.4gAsand Ino.53AlxGao.47_xAs layers on InP in thewavelength range from 280 to 1900 nm

H. W. Dinges, H. Burkhard, H. Hillmer, R. Loschand W. Schlapp 676

23. Identification of interfacial layers by spectroscopicellipsometry

U. Rossow, Th. Werninghaus and W. Richter 680

24. Structural and optical properties of Ga2Se3 layers on GaAs(100)M. von der Emde, U. Rossow, G. Kudlek, A. Hoffmann,A. Krost, W. Richter, S. Morley, A. C. Wright,J. 0. Williams and D. R. T. Zahn 684

25. Valence and conduction band discontinuities ofAlx Gax _ x P/GaP( 100) heterojunction

P. Rodrigues-Herndndez, A. Munoz and A. Mujica 688

XXVII

26. The passivation of GaAs(lll)B by ZnSe: Chemical reactionand Fermi level pinning

J. A. Grange, A. A. Cafolla, D. Spaltmann, D. A. Woolf,C. Dunscombe and R. H. Williams 692

27. The influence of antimony interlayers on the formation ofCdS epitaxial layers on InP(llO) studied by Raman spectroscopy,photoluminescence, and ellipsometry

A. Kelnberger, G. Kudlek, U. Rossow, M. Kopp,N. Esser, A. Hoffmann, W. Richter and D. R. T. Zahn 696

28. The defect-related generation-recombination region insemiconductor heterojunctions

M. Schmeits, M. Sakhaf and S. Munnix 700

29. Influence of additional boundary conditions (ABC) for thepolarization on the electron-photon interaction in quantum-wellsemiconductor structures

V. M. Fomin and E. P. Pokatilov 704

VII. Devices 709

1. A probe of hot carrier transport in silicon using BEEM5. /. Manion, A. M. Milliken, W. J. Kaiser, L. D. Bell,M. H. Hecht and R. W. Fathauer 711

2. Developments and trends in dielectrics of DRAM-cellsA. Spitzer 719

3. Si/SiGe heterostructures for high-speed devicesU. Konig 111

4. Investigation of porous Si superlattices by opticaltechniques

H. Minder, M. G. Berger, C. Dieker, M. Thonissen,H. Lith, W. Theifl and P. Grosse 736

5. Evaluation of InP surface passivation for improved devicecharacteristics

S. Ingrey, R. W. M. Kwok, W. M. Lau and D. Landheer 740

XXVIII

6. High-quality MOCVD-grown AlGalnP/GaAs MODFETstructures: An example of successful interface engineering

W. Pleischen, K. H. Bachem, W. Rolhemund, K. Winklerand D. Fekeie 744

7. The field effect improvement in thin film structuresbased on a-Si:H/Ta2O5 system

B. Popescu 748

VIII. Summary 753

A summary and perspective on the Fourth InternationalConference on the Formation of Semiconductor Interfaces

R. Ludeke 755

Author Index 767