s-808xxc series

S-808xxC Series

www.ablicinc.com

SUPER-SMALL PACKAGE HIGH-PRECISIONVOLTAGE DETECTOR

© ABLIC Inc., 2001-2015 Rev.6.2_02

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The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of 2.0%. Two output forms, Nch open-drain and CMOS output, are available. Super-low current consumption and miniature package lineup can meet demand from the portable device applications. Features

Super-low current consumption 1.3 A typ. (detection voltage1.4 V, at VDD 1.5 V) 0.8 A typ. (detection voltage1.5 V, at VDD 3.5 V)

High-precision detection voltage 2.0% Operating voltage range 0.65 V to 5.0 V (detection voltage1.4 V)

0.95 V to 10.0 V (detection voltage1.5 V) Hysteresis characteristics 5% typ. Detection voltage 0.8 V to 6.0 V (0.1 V step) Output form Nch open-drain output (Active Low)

CMOS output (Active Low) Lead-free, Sn 100%, halogen-free*1

*1. Refer to “ Product Name Structure” for details.

Applications

Battery checkers Power failure detectors Power monitor for portable equipments such as pagers, calculators, electronic notebooks and remote

controllers. Constant voltage power monitor for cameras, video equipments and communication devices. Power monitor for microcomputers and reset for CPUs.

Packages

SC-82AB SOT-23-5 SOT-89-3 SNT-4A TO-92

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Rev.6.2_02

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Block Diagrams

1. Nch Open-drain Output Products

VSS

*1

*1

OUT

VDD

VREF

*1. Parasitic diode Figure 1

2. CMOS Output Products

*1

OUT

VSS

VDD

*1

*1

VREF

*1. Parasitic diode Figure 2

SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTORRev.6.2_02 S-808xxC Series

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Product Name Structure

The detection voltage, output form and packages for S-808xxC Series can be selected at the user's request. Refer to the “1. Product Name” for the construction of the product name, “2. Packages” regarding the package drawings and “3. Product Name List” for the full product names.

1. Product Name

1-1. SC-82AB, SOT-23-5, SOT-89-3

S - 808xx C x xx - xxx T2 x

IC direction in tape specifications*1

Product code*2

Package code NB: SC-82AB MC: SOT-23-5 UA: SOT-89-3

Output form N: Nch open-drain output (Active Low) L: CMOS output (Active Low)

Detection voltage value 08 to 60 (e.g. When the detection voltage is 0.8 V,

it is expressed as 08.)

Environmental code U: Lead-free (Sn 100%), halogen-free G: Lead-free (for details, please contact our sales office)

*1. Refer to the tape specifications at the end of this book. *2. Refer to the Table 1 and 3 in the “3. Product Name List” 1-2. SNT-4A

S - 808xx C x PF - xxx TF U

Environmental code U: Lead-free (Sn 100%), halogen-free

IC direction in tape specifications*1

Product code*2

Package code




*1. Refer to the tape specifications at the end of this book. *2. Refer to the Table 2 and 4 in the “3. Product Name List”


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1-3. TO-92

S - 808xx C x Y - x 2 - U

Packing formB: Bulk Z: Tape and ammo

Package code Y: TO-92




Environmental code U: Lead-free (Sn 100%), halogen-free

2. Packages

Package name Drawing code

Package Tape Reel Zigzag Land

SC-82AB NP004-A-P-SD NP004-A-C-SDNP004-A-C-S1

NP004-A-R-SD

SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD SOT-89-3 UP003-A-P-SD UP003-A-C-SD UP003-A-R-SD SNT-4A PF004-A-P-SD PF004-A-C-SD PF004-A-R-SD PF004-A-L-SDTO-92 (Bulk) YS003-D-P-SD TO-92 (Tape and ammo) YZ003-E-P-SD YZ003-E-C-SD YZ003-E-Z-SD


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3. Product Name List

3-1. Nch Open-drain Output Products

Table 1 (1/2)

Detection voltage range

Hysteresis width (Typ.)

SC-82AB SOT-23-5 SOT-89-3

0.8 V2.0 % 0.034 V S-80808CNNB-B9MT2x 0.9 V2.0 % 0.044 V S-80809CNNB-B9NT2x 1.0 V2.0 % 0.054 V S-80810CNNB-B9OT2x 1.1 V2.0 % 0.064 V S-80811CNNB-B9PT2x 1.2 V2.0 % 0.073 V S-80812CNNB-B9QT2x 1.3 V2.0 % 0.083 V S-80813CNNB-B9RT2x 1.4 V2.0 % 0.093 V S-80814CNNB-B9ST2x 1.5 V2.0 % 0.075 V S-80815CNNB-B8AT2x S-80815CNMC-B8AT2x S-80815CNUA-B8AT2x 1.6 V2.0 % 0.080 V S-80816CNNB-B8BT2x S-80816CNMC-B8BT2x S-80816CNUA-B8BT2x 1.7 V2.0 % 0.085 V S-80817CNNB-B8CT2x S-80817CNMC-B8CT2x S-80817CNUA-B8CT2x 1.8 V2.0 % 0.090 V S-80818CNNB-B8DT2x S-80818CNMC-B8DT2x S-80818CNUA-B8DT2x 1.9 V2.0 % 0.095 V S-80819CNNB-B8ET2x S-80819CNMC-B8ET2x S-80819CNUA-B8ET2x 2.0 V2.0 % 0.100 V S-80820CNNB-B8FT2x S-80820CNMC-B8FT2x S-80820CNUA-B8FT2x 2.1 V2.0 % 0.105 V S-80821CNNB-B8GT2x S-80821CNMC-B8GT2x S-80821CNUA-B8GT2x 2.2 V2.0 % 0.110 V S-80822CNNB-B8HT2x S-80822CNMC-B8HT2x S-80822CNUA-B8HT2x 2.3 V2.0 % 0.115 V S-80823CNNB-B8IT2x S-80823CNMC-B8IT2x S-80823CNUA-B8IT2x 2.4 V2.0 % 0.120 V S-80824CNNB-B8JT2x S-80824CNMC-B8JT2x S-80824CNUA-B8JT2x

2.4 V typ. 4.4 0.1 V*1 S-80824KNUA-D2BT2x*2

2.5 V2.0 % 0.125 V S-80825CNNB-B8KT2x S-80825CNMC-B8KT2x S-80825CNUA-B8KT2x 2.6 V2.0 % 0.130 V S-80826CNNB-B8LT2x S-80826CNMC-B8LT2x S-80826CNUA-B8LT2x 2.7 V2.0 % 0.135 V S-80827CNNB-B8MT2x S-80827CNMC-B8MT2x S-80827CNUA-B8MT2x 2.8 V2.0 % 0.140 V S-80828CNNB-B8NT2x S-80828CNMC-B8NT2x S-80828CNUA-B8NT2x 2.9 V2.0 % 0.145 V S-80829CNNB-B8OT2x S-80829CNMC-B8OT2x S-80829CNUA-B8OT2x 3.0 V2.0 % 0.150 V S-80830CNNB-B8PT2x S-80830CNMC-B8PT2x S-80830CNUA-B8PT2x 3.1 V2.0 % 0.155 V S-80831CNNB-B8QT2x S-80831CNMC-B8QT2x S-80831CNUA-B8QT2x 3.2 V2.0 % 0.160 V S-80832CNNB-B8RT2x S-80832CNMC-B8RT2x S-80832CNUA-B8RT2x 3.3 V2.0 % 0.165 V S-80833CNNB-B8ST2x S-80833CNMC-B8ST2x S-80833CNUA-B8ST2x 3.4 V2.0 % 0.170 V S-80834CNNB-B8TT2x S-80834CNMC-B8TT2x S-80834CNUA-B8TT2x 3.5 V2.0 % 0.175 V S-80835CNNB-B8UT2x S-80835CNMC-B8UT2x S-80835CNUA-B8UT2x 3.6 V2.0 % 0.180 V S-80836CNNB-B8VT2x S-80836CNMC-B8VT2x S-80836CNUA-B8VT2x 3.7 V2.0 % 0.185 V S-80837CNNB-B8WT2x S-80837CNMC-B8WT2x S-80837CNUA-B8WT2x 3.8 V2.0 % 0.190 V S-80838CNNB-B8XT2x S-80838CNMC-B8XT2x S-80838CNUA-B8XT2x 3.9 V2.0 % 0.195 V S-80839CNNB-B8YT2x S-80839CNMC-B8YT2x S-80839CNUA-B8YT2x


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Table 1 (2/2)




4.0 V2.0 % 0.200 V S-80840CNNB-B8ZT2x S-80840CNMC-B8ZT2x S-80840CNUA-B8ZT2x 4.1 V2.0 % 0.205 V S-80841CNNB-B82T2x S-80841CNMC-B82T2x S-80841CNUA-B82T2x 4.2 V2.0 % 0.210 V S-80842CNNB-B83T2x S-80842CNMC-B83T2x S-80842CNUA-B83T2x 4.3 V2.0 % 0.215 V S-80843CNNB-B84T2x S-80843CNMC-B84T2x S-80843CNUA-B84T2x 4.4 V2.0 % 0.220 V S-80844CNNB-B85T2x S-80844CNMC-B85T2x S-80844CNUA-B85T2x 4.5 V2.0 % 0.225 V S-80845CNNB-B86T2x S-80845CNMC-B86T2x S-80845CNUA-B86T2x 4.6 V2.0 % 0.230 V S-80846CNNB-B87T2x S-80846CNMC-B87T2x S-80846CNUA-B87T2x

4.6 V 0.10 V 0.10 V max. S-80846KNUA-D2CT2x*3

4.7 V2.0 % 0.235 V S-80847CNNB-B88T2x S-80847CNMC-B88T2x S-80847CNUA-B88T2x 4.8 V2.0 % 0.240 V S-80848CNNB-B89T2x S-80848CNMC-B89T2x S-80848CNUA-B89T2x 4.9 V2.0 % 0.245 V S-80849CNNB-B9AT2x S-80849CNMC-B9AT2x S-80849CNUA-B9AT2x 5.0 V2.0 % 0.250 V S-80850CNNB-B9BT2x S-80850CNMC-B9BT2x S-80850CNUA-B9BT2x 5.1 V2.0 % 0.255 V S-80851CNNB-B9CT2x S-80851CNMC-B9CT2x S-80851CNUA-B9CT2x 5.2 V2.0 % 0.260 V S-80852CNNB-B9DT2x S-80852CNMC-B9DT2x S-80852CNUA-B9DT2x 5.3 V2.0 % 0.265 V S-80853CNNB-B9ET2x S-80853CNMC-B9ET2x S-80853CNUA-B9ET2x 5.4 V2.0 % 0.270 V S-80854CNNB-B9FT2x S-80854CNMC-B9FT2x S-80854CNUA-B9FT2x 5.5 V2.0 % 0.275 V S-80855CNNB-B9GT2x S-80855CNMC-B9GT2x S-80855CNUA-B9GT2x 5.6 V2.0 % 0.280 V S-80856CNNB-B9HT2x S-80856CNMC-B9HT2x S-80856CNUA-B9HT2x 5.7 V2.0 % 0.285 V S-80857CNNB-B9IT2x S-80857CNMC-B9IT2x S-80857CNUA-B9IT2x 5.8 V2.0 % 0.290 V S-80858CNNB-B9JT2x S-80858CNMC-B9JT2x S-80858CNUA-B9JT2x 5.9 V2.0 % 0.295 V S-80859CNNB-B9KT2x S-80859CNMC-B9KT2x S-80859CNUA-B9KT2x 6.0 V2.0 % 0.300 V S-80860CNNB-B9LT2x S-80860CNMC-B9LT2x S-80860CNUA-B9LT2x

*1. Describes the release voltage. *2. Refer to the Table 18 in “ Electricala Characteristics for Customized Products” for electrical characteristics. *3. Refer to the Table 20 in “ Electricala Characteristics for Customized Products” for electrical characteristics Remark 1. x: G or U 2. Please select products of environmental code = U for Sn 100%, halogen-free products.


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Table 2 (1/2)



SNT-4A TO-92*1

0.8 V2.0 % 0.034 V S-80808CNPF-B9MTFU 0.9 V2.0 % 0.044 V S-80809CNPF-B9NTFU 1.0 V2.0 % 0.054 V S-80810CNPF-B9OTFU 1.1 V2.0 % 0.064 V S-80811CNPF-B9PTFU 1.2 V2.0 % 0.073 V S-80812CNPF-B9QTFU 1.3 V2.0 % 0.083 V S-80813CNPF-B9RTFU 1.4 V2.0 % 0.093 V S-80814CNPF-B9STFU 1.5 V2.0 % 0.075 V S-80815CNPF-B8ATFU S-80815CNY-n2-U 1.6 V2.0 % 0.080 V S-80816CNPF-B8BTFU S-80816CNY-n2-U 1.7 V2.0 % 0.085 V S-80817CNPF-B8CTFU S-80817CNY-n2-U 1.8 V2.0 % 0.090 V S-80818CNPF-B8DTFU S-80818CNY-n2-U 1.9 V2.0 % 0.095 V S-80819CNPF-B8ETFU S-80819CNY-n2-U 2.0 V2.0 % 0.100 V S-80820CNPF-B8FTFU S-80820CNY-n2-U 2.1 V2.0 % 0.105 V S-80821CNPF-B8GTFU S-80821CNY-n2-U 2.2 V2.0 % 0.110 V S-80822CNPF-B8HTFU S-80822CNY-n2-U 2.3 V2.0 % 0.115 V S-80823CNPF-B8ITFU S-80823CNY-n2-U 2.4 V2.0 % 0.120 V S-80824CNPF-B8JTFU S-80824CNY-n2-U

2.4 V typ. 4.4 0.1 V*2 S-80824KNY-n2-U*3 2.5 V2.0 % 0.125 V S-80825CNPF-B8KTFU S-80825CNY-n2-U 2.6 V2.0 % 0.130 V S-80826CNPF-B8LTFU S-80826CNY-n2-U 2.7 V2.0 % 0.135 V S-80827CNPF-B8MTFU S-80827CNY-n2-U 2.8 V2.0 % 0.140 V S-80828CNPF-B8NTFU S-80828CNY-n2-U 2.9 V2.0 % 0.145 V S-80829CNPF-B8OTFU S-80829CNY-n2-U 3.0 V2.0 % 0.150 V S-80830CNPF-B8PTFU S-80830CNY-n2-U 3.1 V2.0 % 0.155 V S-80831CNPF-B8QTFU S-80831CNY-n2-U 3.2 V2.0 % 0.160 V S-80832CNPF-B8RTFU S-80832CNY-n2-U 3.3 V2.0 % 0.165 V S-80833CNPF-B8STFU S-80833CNY-n2-U 3.4 V2.0 % 0.170 V S-80834CNPF-B8TTFU S-80834CNY-n2-U 3.5 V2.0 % 0.175 V S-80835CNPF-B8UTFU S-80835CNY-n2-U 3.6 V2.0 % 0.180 V S-80836CNPF-B8VTFU S-80836CNY-n2-U 3.7 V2.0 % 0.185 V S-80837CNPF-B8WTFU S-80837CNY-n2-U 3.8 V2.0 % 0.190 V S-80838CNPF-B8XTFU S-80838CNY-n2-U 3.9 V2.0 % 0.195 V S-80839CNPF-B8YTFU S-80839CNY-n2-U 4.0 V2.0 % 0.200 V S-80840CNPF-B8ZTFU S-80840CNY-n2-U 4.1 V2.0 % 0.205 V S-80841CNPF-B82TFU S-80841CNY-n2-U 4.2 V2.0 % 0.210 V S-80842CNPF-B83TFU S-80842CNY-n2-U 4.3 V2.0 % 0.215 V S-80843CNPF-B84TFU S-80843CNY-n2-U 4.4 V2.0 % 0.220 V S-80844CNPF-B85TFU S-80844CNY-n2-U 4.5 V2.0 % 0.225 V S-80845CNPF-B86TFU S-80845CNY-n2-U 4.6 V2.0 % 0.230 V S-80846CNPF-B87TFU S-80846CNY-n2-U 4.6 V0.10 V 0.10 V max. S-80846KNY-n2-U*4 4.7 V2.0 % 0.235 V S-80847CNPF-B88TFU S-80847CNY-n2-U 4.8 V2.0 % 0.240 V S-80848CNPF-B89TFU S-80848CNY-n2-U 4.9 V2.0 % 0.245 V S-80849CNPF-B9ATFU S-80849CNY-n2-U 5.0 V2.0 % 0.250 V S-80850CNPF-B9BTFU S-80850CNY-n2-U 5.1 V2.0 % 0.255 V S-80851CNPF-B9CTFU S-80851CNY-n2-U


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Table 2 (2/2)



SNT-4A TO-92*1

5.2 V2.0 % 0.260 V S-80852CNPF-B9DTFU S-80852CNY-n2-U 5.3 V2.0 % 0.265 V S-80853CNPF-B9ETFU S-80853CNY-n2-U 5.4 V2.0 % 0.270 V S-80854CNPF-B9FTFU S-80854CNY-n2-U 5.5 V2.0 % 0.275 V S-80855CNPF-B9GTFU S-80855CNY-n2-U 5.6 V2.0 % 0.280 V S-80856CNPF-B9HTFU S-80856CNY-n2-U 5.7 V2.0 % 0.285 V S-80857CNPF-B9ITFU S-80857CNY-n2-U 5.8 V2.0 % 0.290 V S-80858CNPF-B9JTFU S-80858CNY-n2-U 5.9 V2.0 % 0.295 V S-80859CNPF-B9KTFU S-80859CNY-n2-U 6.0 V2.0 % 0.300 V S-80860CNPF-B9LTFU S-80860CNY-n2-U

*1. n changes according to the packing form in TO-92. B: Bulk, Z: Tape and ammo *2. Describes the release voltage. *3. Refer to the Table 18 in “ Electricala Characteristics for Customized Products” for electrical characteristics. *4. Refer to the Table 20 in “ Electricala Characteristics for Customized Products” for electrical characteristics.


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3-2. CMOS Output Products

Table 3 (1/2)




0.8 V2.0 % 0.034 V S-80808CLNB-B7MT2x 0.9 V2.0 % 0.044 V S-80809CLNB-B7NT2x 1.0 V2.0 % 0.054 V S-80810CLNB-B7OT2x 1.1 V2.0 % 0.064 V S-80811CLNB-B7PT2x 1.2 V2.0 % 0.073 V S-80812CLNB-B7QT2x 1.3 V2.0 % 0.083 V S-80813CLNB-B7RT2x 1.4 V2.0 % 0.093 V S-80814CLNB-B7ST2x 1.5 V2.0 % 0.075 V S-80815CLNB-B6AT2x S-80815CLMC-B6AT2x S-80815CLUA-B6AT2x 1.6 V2.0 % 0.080 V S-80816CLNB-B6BT2x S-80816CLMC-B6BT2x S-80816CLUA-B6BT2x 1.7 V2.0 % 0.085 V S-80817CLNB-B6CT2x S-80817CLMC-B6CT2x S-80817CLUA-B6CT2x 1.8 V2.0 % 0.090 V S-80818CLNB-B6DT2x S-80818CLMC-B6DT2x S-80818CLUA-B6DT2x 1.9 V2.0 % 0.095 V S-80819CLNB-B6ET2x S-80819CLMC-B6ET2x S-80819CLUA-B6ET2x 2.0 V2.0 % 0.100 V S-80820CLNB-B6FT2x S-80820CLMC-B6FT2x S-80820CLUA-B6FT2x 2.1 V2.0 % 0.105 V S-80821CLNB-B6GT2x S-80821CLMC-B6GT2x S-80821CLUA-B6GT2x 2.2 V2.0 % 0.110 V S-80822CLNB-B6HT2x S-80822CLMC-B6HT2x S-80822CLUA-B6HT2x 2.3 V2.0 % 0.115 V S-80823CLNB-B6IT2x S-80823CLMC-B6IT2x S-80823CLUA-B6IT2x 2.4 V2.0 % 0.120 V S-80824CLNB-B6JT2x S-80824CLMC-B6JT2x S-80824CLUA-B6JT2x 2.5 V2.0 % 0.125 V S-80825CLNB-B6KT2x S-80825CLMC-B6KT2x S-80825CLUA-B6KT2x 2.6 V2.0 % 0.130 V S-80826CLNB-B6LT2x S-80826CLMC-B6LT2x S-80826CLUA-B6LT2x 2.7 V2.0 % 0.135 V S-80827CLNB-B6MT2x S-80827CLMC-B6MT2x S-80827CLUA-B6MT2x 2.8 V2.0 % 0.140 V S-80828CLNB-B6NT2x S-80828CLMC-B6NT2x S-80828CLUA-B6NT2x 2.9 V2.0 % 0.145 V S-80829CLNB-B6OT2x S-80829CLMC-B6OT2x S-80829CLUA-B6OT2x 3.0 V2.0 % 0.150 V S-80830CLNB-B6PT2x S-80830CLMC-B6PT2x S-80830CLUA-B6PT2x 3.1 V2.0 % 0.155 V S-80831CLNB-B6QT2x S-80831CLMC-B6QT2x S-80831CLUA-B6QT2x 3.2 V2.0 % 0.160 V S-80832CLNB-B6RT2x S-80832CLMC-B6RT2x S-80832CLUA-B6RT2x 3.3 V2.0 % 0.165 V S-80833CLNB-B6ST2x S-80833CLMC-B6ST2x S-80833CLUA-B6ST2x 3.4 V2.0 % 0.170 V S-80834CLNB-B6TT2x S-80834CLMC-B6TT2x S-80834CLUA-B6TT2x 3.5 V2.0 % 0.175 V S-80835CLNB-B6UT2x S-80835CLMC-B6UT2x S-80835CLUA-B6UT2x 3.6 V2.0 % 0.180 V S-80836CLNB-B6VT2x S-80836CLMC-B6VT2x S-80836CLUA-B6VT2x 3.7 V2.0 % 0.185 V S-80837CLNB-B6WT2x S-80837CLMC-B6WT2x S-80837CLUA-B6WT2x 3.8 V2.0 % 0.190 V S-80838CLNB-B6XT2x S-80838CLMC-B6XT2x S-80838CLUA-B6XT2x 3.9 V2.0 % 0.195 V S-80839CLNB-B6YT2x S-80839CLMC-B6YT2x S-80839CLUA-B6YT2x 4.0 V2.0 % 0.200 V S-80840CLNB-B6ZT2x S-80840CLMC-B6ZT2x S-80840CLUA-B6ZT2x 4.1 V2.0 % 0.205 V S-80841CLNB-B62T2x S-80841CLMC-B62T2x S-80841CLUA-B62T2x 4.2 V2.0 % 0.210 V S-80842CLNB-B63T2x S-80842CLMC-B63T2x S-80842CLUA-B63T2x 4.3 V2.0 % 0.215 V S-80843CLNB-B64T2x S-80843CLMC-B64T2x S-80843CLUA-B64T2x 4.4 V2.0 % 0.220 V S-80844CLNB-B65T2x S-80844CLMC-B65T2x S-80844CLUA-B65T2x 4.45 V typ. 4.70 V max.*1 S-80844KLUA-D2AT2x*2

4.5 V2.0 % 0.225 V S-80845CLNB-B66T2x S-80845CLMC-B66T2x S-80845CLUA-B66T2x 4.6 V2.0 % 0.230 V S-80846CLNB-B67T2x S-80846CLMC-B67T2x S-80846CLUA-B67T2x 4.7 V2.0 % 0.235 V S-80847CLNB-B68T2x S-80847CLMC-B68T2x S-80847CLUA-B68T2x 4.8 V2.0 % 0.240 V S-80848CLNB-B69T2x S-80848CLMC-B69T2x S-80848CLUA-B69T2x 4.9 V2.0 % 0.245 V S-80849CLNB-B7AT2x S-80849CLMC-B7AT2x S-80849CLUA-B7AT2x 5.0 V2.0 % 0.250 V S-80850CLNB-B7BT2x S-80850CLMC-B7BT2x S-80850CLUA-B7BT2x 5.1 V2.0 % 0.255 V S-80851CLNB-B7CT2x S-80851CLMC-B7CT2x S-80851CLUA-B7CT2x


10

Table 3 (2/2)




5.2 V2.0 % 0.260 V S-80852CLNB-B7DT2x S-80852CLMC-B7DT2x S-80852CLUA-B7DT2x 5.3 V2.0 % 0.265 V S-80853CLNB-B7ET2x S-80853CLMC-B7ET2x S-80853CLUA-B7ET2x 5.4 V2.0 % 0.270 V S-80854CLNB-B7FT2x S-80854CLMC-B7FT2x S-80854CLUA-B7FT2x 5.5 V2.0 % 0.275 V S-80855CLNB-B7GT2x S-80855CLMC-B7GT2x S-80855CLUA-B7GT2x 5.6 V2.0 % 0.280 V S-80856CLNB-B7HT2x S-80856CLMC-B7HT2x S-80856CLUA-B7HT2x 5.7 V2.0 % 0.285 V S-80857CLNB-B7IT2x S-80857CLMC-B7IT2x S-80857CLUA-B7IT2x 5.8 V2.0 % 0.290 V S-80858CLNB-B7JT2x S-80858CLMC-B7JT2x S-80858CLUA-B7JT2x 5.9 V2.0 % 0.295 V S-80859CLNB-B7KT2x S-80859CLMC-B7KT2x S-80859CLUA-B7KT2x 6.0 V2.0 % 0.300 V S-80860CLNB-B7LT2x S-80860CLMC-B7LT2x S-80860CLUA-B7LT2x

*1. Describes the release voltage. *2. Refer to the Table 19 in “ Electricala Characteristics for Customized Products” for electrical characteristics. Remark 1. x: G or U 2. Please select products of environmental code = U for Sn 100%, halogen-free products.

Table 4 (1/2)



SNT-4A TO-92*1

0.8 V2.0 % 0.034 V S-80808CLPF-B7MTFU 0.9 V2.0 % 0.044 V S-80809CLPF-B7NTFU 1.0 V2.0 % 0.054 V S-80810CLPF-B7OTFU 1.1 V2.0 % 0.064 V S-80811CLPF-B7PTFU 1.2 V2.0 % 0.073 V S-80812CLPF-B7QTFU 1.3 V2.0 % 0.083 V S-80813CLPF-B7RTFU 1.4 V2.0 % 0.093 V S-80814CLPF-B7STFU 1.5 V2.0 % 0.075 V S-80815CLPF-B6ATFU S-80815CLY-n2-U 1.6 V2.0 % 0.080 V S-80816CLPF-B6BTFU S-80816CLY-n2-U 1.7 V2.0 % 0.085 V S-80817CLPF-B6CTFU S-80817CLY-n2-U 1.8 V2.0 % 0.090 V S-80818CLPF-B6DTFU S-80818CLY-n2-U 1.9 V2.0 % 0.095 V S-80819CLPF-B6ETFU S-80819CLY-n2-U 2.0 V2.0 % 0.100 V S-80820CLPF-B6FTFU S-80820CLY-n2-U 2.1 V2.0 % 0.105 V S-80821CLPF-B6GTFU S-80821CLY-n2-U 2.2 V2.0 % 0.110 V S-80822CLPF-B6HTFU S-80822CLY-n2-U 2.3 V2.0 % 0.115 V S-80823CLPF-B6ITFU S-80823CLY-n2-U 2.4 V2.0 % 0.120 V S-80824CLPF-B6JTFU S-80824CLY-n2-U 2.5 V2.0 % 0.125 V S-80825CLPF-B6KTFU S-80825CLY-n2-U 2.6 V2.0 % 0.130 V S-80826CLPF-B6LTFU S-80826CLY-n2-U 2.7 V2.0 % 0.135 V S-80827CLPF-B6MTFU S-80827CLY-n2-U 2.8 V2.0 % 0.140 V S-80828CLPF-B6NTFU S-80828CLY-n2-U 2.9 V2.0 % 0.145 V S-80829CLPF-B6OTFU S-80829CLY-n2-U 3.0 V2.0 % 0.150 V S-80830CLPF-B6PTFU S-80830CLY-n2-U 3.1 V2.0 % 0.155 V S-80831CLPF-B6QTFU S-80831CLY-n2-U 3.2 V2.0 % 0.160 V S-80832CLPF-B6RTFU S-80832CLY-n2-U 3.3 V2.0 % 0.165 V S-80833CLPF-B6STFU S-80833CLY-n2-U 3.4 V2.0 % 0.170 V S-80834CLPF-B6TTFU S-80834CLY-n2-U 3.5 V2.0 % 0.175 V S-80835CLPF-B6UTFU S-80835CLY-n2-U 3.6 V2.0 % 0.180 V S-80836CLPF-B6VTFU S-80836CLY-n2-U 3.7 V2.0 % 0.185 V S-80837CLPF-B6WTFU S-80837CLY-n2-U 3.8 V2.0 % 0.190 V S-80838CLPF-B6XTFU S-80838CLY-n2-U


11

Table 4 (2/2)



SNT-4A TO-92*1

3.9 V2.0 % 0.195 V S-80839CLPF-B6YTFU S-80839CLY-n2-U 4.0 V2.0 % 0.200 V S-80840CLPF-B6ZTFU S-80840CLY-n2-U 4.1 V2.0 % 0.205 V S-80841CLPF-B62TFU S-80841CLY-n2-U 4.2 V2.0 % 0.210 V S-80842CLPF-B63TFU S-80842CLY-n2-U 4.3 V2.0 % 0.215 V S-80843CLPF-B64TFU S-80843CLY-n2-U 4.4 V2.0 % 0.220 V S-80844CLPF-B65TFU S-80844CLY-n2-U 4.45 V typ. 4.70 V max.*2 S-80844KLY-n2-U*3

4.5 V2.0 % 0.225 V S-80845CLPF-B66TFU S-80845CLY-n2-U 4.6 V2.0 % 0.230 V S-80846CLPF-B67TFU S-80846CLY-n2-U 4.7 V2.0 % 0.235 V S-80847CLPF-B68TFU S-80847CLY-n2-U 4.8 V2.0 % 0.240 V S-80848CLPF-B69TFU S-80848CLY-n2-U 4.9 V2.0 % 0.245 V S-80849CLPF-B7ATFU S-80849CLY-n2-U 5.0 V2.0 % 0.250 V S-80850CLPF-B7BTFU S-80850CLY-n2-U 5.1 V2.0 % 0.255 V S-80851CLPF-B7CTFU S-80851CLY-n2-U 5.2 V2.0 % 0.260 V S-80852CLPF-B7DTFU S-80852CLY-n2-U 5.3 V2.0 % 0.265 V S-80853CLPF-B7ETFU S-80853CLY-n2-U 5.4 V2.0 % 0.270 V S-80854CLPF-B7FTFU S-80854CLY-n2-U 5.5 V2.0 % 0.275 V S-80855CLPF-B7GTFU S-80855CLY-n2-U 5.6 V2.0 % 0.280 V S-80856CLPF-B7HTFU S-80856CLY-n2-U 5.7 V2.0 % 0.285 V S-80857CLPF-B7ITFU S-80857CLY-n2-U 5.8 V2.0 % 0.290 V S-80858CLPF-B7JTFU S-80858CLY-n2-U 5.9 V2.0 % 0.295 V S-80859CLPF-B7KTFU S-80859CLY-n2-U 6.0 V2.0 % 0.300 V S-80860CLPF-B7LTFU S-80860CLY-n2-U

*1. n changes according to the packing form in TO-92. B: Bulk, Z: Tape and ammo *2. Describes the release voltage. *3. Refer to the Table 19 in “ Electricala Characteristics for Customized Products” for electrical characteristics.


12

Output Forms

1. Output Forms in S-808xxC Series

Table 5

Nch open-drain output products

(Active Low) CMOS output products

(Active Low)

S-808xxC Series “N” is the last letter of the product name.e.g. S-80815CN

“L” is the last letter of the product name.e.g. S-80815CL

2. Output Forms and Their Usage

Table 6

Usage Nch open-drain output products(Active Low)

CMOS output products(Active Low)

Different power supplies Yes No Active Low reset for CPUs Yes Yes Active High reset for CPUs No No Detection voltage change by resistor divider Yes No

Example for two power supplies Example for one power supply

V/D Nch

V/D Nch

V/D CMOSCPU CPU CPU

VDD1 VDD2 VDD VDD

OUT OUT OUT

VSS VSS VSS

Figure 3


13

Pin Configurations

4 3

1 2

SC-82AB Top view

Table 7

Pin No. Symbol Description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 NC*1 No connection 4 VSS GND pin *1. The NC pin is electrically open.

The NC pin can be connected to VDD or VSS.

Figure 4

SOT-23-5 Top view

5 4

3 2 1

Table 8

Pin No. Symbol Description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 VSS GND pin 4 NC*1 No connection 5 NC*1 No connection *1. The NC pin is electrically open.


Figure 5

SOT-89-3 Top view

3 2 1

Table 9

Pin No. Symbol Description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 VSS GND pin

Figure 6

SNT-4A

Top view

1 4

2 3

Table10

Pin No. Symbol Description 1 OUT Voltage detection output pin 2 VSS GND pin 3 NC*1 No connection 4 VDD Voltage input pin *1. The NC pin is electrically open.


Figure 7


14

TO-92 Bottom view

1 3 2

Table 11

Pin No. Symbol Description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 VSS GND pin

Figure 8


15

Absolute Maximum Ratings

1. Detection Voltage Typ. 1.4 V or Less Products

Table 12 (Ta 25 C unless otherwise specified)

Item Symbol Absolute maximum ratings UnitPower supply voltage VDDVSS 7 V Output voltage Nch open-drain output products VOUT VSS0.3 to VSS7 V CMOS output products VSS0.3 to VDD0.3 V Output current IOUT 50 mAPower dissipation

SC-82AB PD 150 (When not mounted on board) mW 350*1 mWSNT-4A 140 (When not mounted on board) mW 300*1 mW

Operating ambient temperature Topr 40 to 85 CStorage temperature Tstg 40 to 125 C

*1. When mounted on board [Mounted board] (1) Board size: 114.3 mm 76.2 mm t1.6 mm (2) Board name: JEDEC STANDARD51-7

Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions.

0 50 100 150

400

200

0

Po

wer

Dis

sipa

tion

PD (

mW

)

Ambient Temperature Ta (C)

500

300

100 SNT-4A

SC-82AB

Figure 9 Power Dissipation of Package (When Mounted on Board)


16

2. Detection Voltage Typ. 1.5 V or More Products


Item Symbol Absolute maximum ratings UnitPower supply voltage VDDVSS 12 V Output voltage Nch open-drain output products VOUT VSS0.3 to VSS12 V CMOS output products VSS0.3 to VDD0.3 V Output current IOUT 50 mAPower dissipation

SC-82AB PD 150 (When not mounted on board) mW 350*1 mWSOT-23-5 250 (When not mounted on board) mW 600*1 mWSOT-89-3 500 (When not mounted on board) mW 1000*1 mWSNT-4A 140 (When not mounted on board) mW 300*1 mWTO-92 400 (When not mounted on board) mW 800*1 mW

Operating ambient temperature Topr 40 to 85 CStorage temperature Tstg 40 to 125 C

*1. When mounted on board [Mounted board] (1) Board size: 114.3 mm 76.2 mm t1.6 mm (2) Board name: JEDEC STANDARD51-7

Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions.

0 50 100 150

800

400

0

Pow

er D

issi

patio

n P

D (

mW

)

Ambient Temperature Ta (C)

1000

600

200

1200

SNT-4A

SC-82AB

SOT-23-5

SOT-89-3

TO-92

Figure 10 Power Dissipation of Package (When Mounted on Board)


17

Electrical Characteristics


1-1. Detection Voltage Typ.1.4 V or Less Products


Item Symbol Condition Min. Typ. Max. Unit Test

circuit

Detection voltage*1 VDET VDET(S)

0.98VDET(S)

VDET(S)

1.02 V 1

Release voltage VDET S-80808 0.802 0.834 0.867 V 1

S-80809 0.910 0.944 0.979 V 1

S-80810 1.017 1.054 1.091 V 1

S-80811 1.125 1.164 1.203 V 1

S-80812 1.232 1.273 1.315 V 1

S-80813 1.340 1.383 1.427 V 1

S-80814 1.448 1.493 1.538 V 1

Hysteresis width VHYS S-80808 0.018 0.034 0.051 V 1

S-80809 0.028 0.044 0.061 V 1

S-80810 0.037 0.054 0.071 V 1

S-80811 0.047 0.064 0.081 V 1

S-80812 0.056 0.073 0.091 V 1

S-80813 0.066 0.083 0.101 V 1

S-80814 0.076 0.093 0.110 V 1

Current consumption ISS VDD 1.5 V S-80808 to 09 1.3 3.5 A 2

VDD 2.0 V S-80810 to 14 1.3 3.5 A 2

Operating voltage VDD 0.65 5.0 V 1

Output current IOUT Output transistor, Nch, VDS 0.5 V, VDD 0.7 V

0.04 0.2 mA 3

Leakage current ILEAK Output transistor, Nch, VDS 5.0 V, VDD 5.0 V

60 nA 3

Response time tPLH 60 s 1

Detection voltage temperature coefficient*2 DET

DET

VTa

V

Ta 40 to 85 C 100 350 ppm/ C

1

*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 1 to 2.)

*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.

1000Cppm/ VTa

VV Typ.VCmV/

Ta

V

DET

DET DET(S)

DET

3*2**1

*1. Temperature change of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient


18

1-2. Detection Voltage Typ.1.5 V or More Products


Item Symbol Condition Min. Typ. Max. UnitTest

circuit


0.98VDET(S)

VDET(S)

1.02 V 1

Hysteresis width VHYS VDET

0.03VDET

0.05 VDET

0.08 V 1

Current consumption ISS VDD 3.5 V S-80815 to 26 0.8 2.4 A 2 VDD 4.5 V S-80827 to 39 0.8 2.4 A 2 VDD 6.0 V S-80840 to 56 0.9 2.7 A 2 VDD 7.5 V S-80857 to 60 0.9 2.7 A 2 Operating voltage VDD 0.95 10.0 V 1 Output current IOUT Output transistor,

Nch, VDS 0.5 VVDD 1.2 V S-80815 to 60

0.59 1.36 mA 3

VDD 2.4 V S-80827 to 60

2.88 4.98 mA 3

Leakage current ILEAK Output transistor, Nch, VDS 10.0 V, VDD 10.0 V

100 nA 3

Response time tPLH 60 s 1 Detection voltage temperature coefficient*2 DET

DET

VTa

V

Ta 40 to 85 C 100 350 ppm/C 1



1000Cppm/ VTa

VV Typ.VCmV/

Ta

V

DET

DET DET(S)

DET

3*2**1



19

2. CMOS Output Products

2-1. Detection Voltage Typ.1.4 V or Less Products



circuit


0.98VDET(S)

VDET(S)

1.02 V 1

Release voltage VDET S-80808 0.802 0.834 0.867 V 1 S-80809 0.910 0.944 0.979 V 1 S-80810 1.017 1.054 1.091 V 1 S-80811 1.125 1.164 1.203 V 1 S-80812 1.232 1.273 1.315 V 1 S-80813 1.340 1.383 1.427 V 1 S-80814 1.448 1.493 1.538 V 1 Hysteresis width VHYS S-80808 0.018 0.034 0.051 V 1 S-80809 0.028 0.044 0.061 V 1 S-80810 0.037 0.054 0.071 V 1 S-80811 0.047 0.064 0.081 V 1 S-80812 0.056 0.073 0.091 V 1 S-80813 0.066 0.083 0.101 V 1 S-80814 0.076 0.093 0.110 V 1 Current consumption ISS VDD 1.5 V S-80808 to 09 1.3 3.5 A 2 VDD 2.0 V S-80810 to 14 1.3 3.5 A 2 Operating voltage VDD 0.65 5.0 V 1 Output current IOUT Output transistor,

Nch, VDS 0.5 V, VDD 0.7 V0.04 0.2 mA 3

Output transistor, Pch, VDS 2.1 V, VDD 4.5 V

2.9 5.8 mA 4


DET

VTa

V

Ta 40 to 85 C 100 350 ppm/ C

1



1000Cppm/ VTa

VV Typ.VCmV/

Ta

V

DET

DET DET(S)

DET

3*2**1



20

2-2. Detection Voltage Typ.1.5 V or More Products


Item Symbol Condition Min. Typ. Max. UnitTest

circuit


0.98VDET(S)

VDET(S)

1.02 V 1

Hysteresis width VHYS VDET

0.03VDET

0.05 VDET

0.08 V 1

Current consumption ISS VDD 3.5 V S-80815 to 26 0.8 2.4 A 2 VDD 4.5 V S-80827 to 39 0.8 2.4 A 2 VDD 6.0 V S-80840 to 56 0.9 2.7 A 2 VDD 7.5 V S-80857 to 60 0.9 2.7 A 2 Operating voltage VDD 0.95 10.0 V 1 Output current IOUT Output transistor,

Nch, VDS 0.5 VVDD 1.2 V S-80815 to 60

0.59 1.36 mA 3

VDD 2.4 V S-80827 to 60

2.88 4.98 mA 3

Output transistor,Pch, VDS 0.5 V

VDD 4.8 V S-80815 to 39

1.43 2.39 mA 4

VDD 6.0 V S-80840 to 56

1.68 2.78 mA 4

VDD 8.4 V S-80857 to 60

2.08 3.42 mA 4


DET

VTa

V

Ta 40 to 85 C 100 350 ppm/°C

1



1000Cppm/ VTa

VV Typ.VCmV/

Ta

V

DET

DET DET(S)

DET

3*2**1



21

Test Circuits

1.

S-808xxC

Series V

VDD

VDD

VSS

OUT V

R*1 100 k

*1. R is unnecessary for CMOS output products.

Figure 11

2.

S-808xxC

Series

A

VDD

VDD

VSS

OUT

Figure 12

3.

S-808xxC

Series

V

VDS

VDD

VDD

VSS

OUT V A

Figure 13

4.

S-808xxC

Series

V VDD

VDS

VDD

VSS

OUT V A

Figure 14


22

Timing Chart


V

OUT

VDD

VSS

R 100 k

Release voltage (VDET)

Detection voltage (VDET)

VD D

VSS

Minimum operating voltage

Output from the OUT pin

Hysteresis width (VHYS)

VDD

VSS

Figure 15 2. CMOS Output Products

V

OUT

VDD

VSS

Release voltage (VDET)

Detection voltage (VDET)

VDD

VSS


Hysteresis width (VHYS)


VSS

VDD

Remark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in the shaded region.

Figure 16


23

Operation

1. Basic Operation: CMOS Output (Active Low)

1-1. When the power supply voltage (VDD) is higher than the release voltage (VDET), the Nch transistor is OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in

Figure 17 is OFF, the comparator input voltage is CBA

DDCB

RRR

V)RR(

.

1-2. When the VDD goes below VDET, the output provides the VDD level, as long as the VDD remains above the detection voltage VDET. When the VDD falls below VDET (point A in Figure 18), the Nch transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time the Nch transistor N1 in Figure 17 becomes ON, the comparator input voltage is changed to

BA

DDB

RR

VR

.

1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the VDD when the output is pulled up to the VDD.

1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still appears even when the VDD surpasses VDET, as long as it does not exceed the release voltage VDET.

1-5. When the VDD rises above VDET (point B in Figure 18), the Nch transistor becomes OFF and the Pch transistor becomes ON to provide VDD level at the output.

VREF

Pch

Nch

N1RC

RB

RA

OUT

VSS

VDD

*1

*1

*1

*1. Parasiteic diode

Figure 17 Operation 1


24

Hysteresis width (VHYS) AB

VDD

VSS



VDD

VSS

(1) (2) (3) (5) (4)

Release voltage (VDET) Detection voltage (VDET)

Figure 18 Operation 2

2. Other Characteristics

2-1. Temperature Characteristics of Detection Voltage

The shaded area in Figure 19 shows the temperature characteristics of the detection voltage.

40 25

0.945 mV/C

VDET [V]

85 Ta [C]

0.945 mV/C

VDET25*1

*1. �VDET25 is an actual detection voltage value at 25°C.

Figure 19 Temperature Characteristics of Detection Voltage (Example for S-80827C)

2-2. Temperature Characteristics of Release Voltage

The temperature change Ta

VDET

of the release voltage is calculated by using the temperature

chnange Ta

VDET

of the detection voltage as follows:

Ta

V

V

V

Ta

V DET

DET

DETDET

The temperature change of the release voltage and the detection voltage have the same sign consequently.


25

2-3. Temperature Characteristics of Hysteresis Voltage

The temperature change of the hysteresis voltage is expressed as Ta

V

Ta

V DETDET

and is calculated

as follows:

Ta

V

V

V

Ta

V

Ta

V DET

DET

HYSDETDET

Standard Circuit

VDD

OUT

VSS

R*1 100 k

*1. R is unnecessary for CMOS output products. Figure 20

Caution The above connection diagram and constants do not guarantee correct operation. Perform

sufficient evaluation using the actual application to set the constants.

Technical Terms

1. Detection Voltage (VDET), Release Voltage (VDET)

The detection voltage (VDET) is a voltage at which the output turns to low. The detection voltage varies slightly among products of the same specification. The variation of detection voltage between the specified minimum (VDET) Min. and the maximum (VDET) Max. is called the detection voltage range (Refer to Figure 21).

Example: For the S-80815CN, the detection voltage lies in the range of 1.470(VDET)1.530. This means that some S-80815CNs have 1.470 V for VDET and some have 1.530 V.

The release voltage (VDET) is a voltage at which the output turns to high. The release voltage varies slightly among products of the same specification. The variation of release voltages between the specified minimum (VDET) Min. and the maximum (VDET) Max. is called the release voltage range (Refer to Figure 22). The range is calculed from the actual detection voltage (VDET) of a product and is expressed by VDET1.03VDETVDET 1.08.

Example: For the S-80815CN, the release voltage lies in the range of 1.514(VDET)1.652. This means that some S-80815CNs have 1.514 V for VDET and some have 1.652 V.


26

VDD

OUT

(VDET) Max.

(VDET) Min.Detection voltage range

Detection voltage

(VDET) Max.

(VDET) Min.

Release voltage range

VDD Release voltage

OUT

Figure 21 Detection Voltage (CMOS Output Products) Figure 22 Release Voltage (CMOS Output Products) Remark Although the detection voltage and release voltage overlap in the range of 1.514 V to 1.530 V,

VDET is always larger than VDET.

2. Hysteresis Width (VHYS)

The hysteresis width is the voltage difference between the detection voltage and the release voltage (The voltage at point B The voltage at point A VHYS in Figure 18). The existence of the hysteresis width prevents malfunction caused by noise on input signal.

3. Through-type Current

The through-type current refers to the current that flows instantaneously at the time of detection and release of a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain output products.

4. Oscillation

In applications where a resistor is connected to the voltage detector input (Figure 23), taking a CMOS active low product for example, the through-type current which is generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current][input resistance] across the resistor. When the input voltage drops below the detection voltage (VDET) as a result, the output voltage goes to low level. In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes from low to high. A through-type current is again generated, a voltage drop appears, and repeating the process finally induces oscillation.

OUT

VSS

VDD

RB

RA

VIN S-808xxCL

Figure 23 An Example for Bad Implementation of Input Voltage Divider


27

Electrical Characteristics for Customized Products

1. S-80824KNUA-D2BT2x, S-80824KNY-n2-U



circuit

Detection voltage*1 VDET 2.295 2.400*2 2.505 V 1

Release voltage VDET 4.300 4.400 4.500 V 1 Current consumption ISS VDD6.0 V 0.8 2.4 A 2 Operating voltage VDD 0.95 10.0 V 1 Output current IOUT Output transistor,

Nch, VDS 0.5 VVDD 0.95 V 0.03 0.24 mA 3

VDD 1.2 V 0.23 0.50 mA 3

Leakage current ILEAK Output transistor, Nch, VDD 10.0 V, VDS 10.0 V

0.1 A 3


DET

VTa

V

Ta 40 to 85 °C 100 350 ppm/°C 1

*1. VDET: Actual detection voltage value *2. Specified detection voltage value (VDET(S)) *3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.

1000Cppm/ VTa

VV Typ.VCmV/

Ta

V

DET

DET DET(S)

DET

3*2**1



28

2. S-80844KLUA-D2AT2x, S-80844KLY-n2-U



circuit

Detection voltage*1 VDET 4.295 4.450*2 4.605 V 1 Release voltage VDET 4.700 V 1 Current consumption ISS VDD 6.0 V 1.0 3.0 A 2 Operating voltage VDD 0.95 10.0 V 1 Output current IOUT Output transistor,

Nch, VDS 0.5 VVDD 1.2 V 0.23 0.50 mA 3

VDD 2.4 V 1.60 3.70 mA 3

Output transistor, Pch, VDS 0.5 V

VDD 4.8 V 0.36 0.62 mA 4


DET

VTa

V

Ta 40 to 85 °C 100 350 ppm/°C 1


1000Cppm/ VTa

VV Typ.VCmV/

Ta

V

DET

DET DET(S)

DET

3*2**1



29

3. S-80846KNUA-D2CT2x, S-80846KNY-n2-U



circuit

Detection voltage*1 VDET 4.500 4.600*2 4.700 V 1 Hysteresis width VHYS 0.05 0.10 V 1 Current consumption ISS VDD 6.0 V 0.9 2.7 A 2 Operating voltage VDD 0.95 10.0 V 1 Output current IOUT Output transistor,

Nch, VDS 0.5 V VDD 1.2 V 0.59 1.36 mA 3

VDD 2.4 V 2.88 4.98 mA 3

Leakage current ILEAK Output transistor, Nch, VDD 10.0 V, VDS 10.0 V

0.1 A 3

Response time tPLH 60 s 1

Detection voltage temperature coefficient*3

DET

DET

VTa

V

Ta 40 to 85 °C 100 350 ppm/°C 1


1000Cppm/ VTa

VV Typ.VCmV/

Ta

V

DET

DET DET(S)

DET

3*2**1


Precautions

Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit.

In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type current during releasing.

In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the power supply voltage (VDD) is slow near the detection voltage.

When designing for mass production using an application circuit described herein, the product deviation and temperature characteristics should be taken into consideration. ABLIC Inc. shall not bear any responsibility for the products on the circuits described herein.

ABLIC Inc. claims no responsibility for any and all disputes arising out of or in connection with any infringement of the products including this IC upon patents owned by a third party.


30

Typical Characteristics (Typical Data)

1. Detection Voltage (VDET) - Temperature (Ta)

0.75

0.80

0.85

0.90

-40 -20 0 20 40 60 80Ta (°C)

VD

ET(V

)

S-80808CL

+VDET

-VDET

1.25

1.30

1.35

1.40

1.45

1.50

1.55

-40 -20 0 20 40 60 80 Ta (°C)

V DE

T (V

)

S-80814CL

+V DET

-V DET

1.45

1.50

1.55

1.60

-40 -20 0 20 40 60 80Ta (°C)

VD

ET(V

)

S-80815CL

+VDET

-VDET

5.80

5.90

6.00

6.10

6.20

6.30

6.40

-40 -20 0 20 40 60 80 Ta (°C)

V DE

T (V

)

S-80860CL

+V DET

-V DET

2. Hysteresis Voltage Width (VHYS) - Temperature (Ta)

3.0

4.0

5.0

6.0

8.0

-40 -20 0 20 40 60 80 Ta (°C)

V H

YS

(%

)

S-80808CL

7.0

3.0

4.0

5.0

6.0

8.0

-40 -20 0 20 40 60 80 Ta (°C)

V HY

S (%

)

S-80814CL

7.0

3.0

4.0

5.0

6.0

8.0

-40 -20 0 20 40 60 80 Ta (°C)

V H

YS

(%

)

S-80815CL

7.0

4.0

5.0

6.0

7.0

8.0

-40 -20 0 20 40 60 80 Ta (°C)

V HY

S (%

)

S-80860CL

3.0


31

3. Current Consumption (ISS) - Input Voltage (VDD)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0 1.0 2.0 3.0 4.0 5.0 6.0VDD (V)

I SS (A

)

S-80808CL

9.3 A

Ta=25°C

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0 1.0 2.0 3.0 4.0 5.0 6.0 VDD (V)

S-80814CL

21.5 A

Ta=25°C

I SS (A

)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0 2.0 4.0 6.0 8.0 10.0 12.0VDD (V)

I SS (A

)

S-80815CL

4.7 A

Ta=25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0 2.0 4.0 6.0 8.0 10.0 12.0VDD (V)

S-80860CL

12.8 A

Ta=25°C

I SS (A

)

4. Current Consumption (ISS) - Temperature (Ta)

0.0

0.5

1.0

1.5

2.0

-40 -20 0 20 40 60 80

Ta (°C)

I SS (A

)

S-80808CL VDD1.5 V

0.0

0.5

1.0

1.5

2.0

-40 -20 0 20 40 60 80 Ta (°C)

I SS (A

)

S-80814CL VDD2.0 V

0.0

0.5

1.0

1.5

2.0

-40 -20 0 20 40 60 80

Ta (°C)

I SS (A

)

S-80815CL VDD3.5 V

0.0

0.5

1.0

1.5

2.0

-40 -20 0 20 40 60 80 Ta (°C)

I SS (A

)

S-80860CL VDD7.5 V


32

5. Nch Transistor Output Current (IOUT) – VDS

0

1.0

2.0

3.0

4.0

5.0

0 0.5 1.0 1.5 2.0 2.5VDS (V)

I OU

T (

mA

)

S-80814CL/CN Ta=25°C

VDD0.7 V

VDD1.0

VDD1.3 V

0

10

20

30

40

50

0 1.0 2.0 3.0 4.0 5.0VDS (V)

I OU

T (

mA

)

6.0 V

S-80860CL/CN Ta=25°C

VDD1.2 V

2.4 V

3.6 V

4.8 V

6. Pch Transistor Output Current (IOUT) -VDS

S-80808CL

0

1.0

2.0

3.0

4.0

5.0

0 0.5 1.0 1.5 2.0 2.5VDS (V)

I OU

T (

mA

)

Ta=25ºC

VDD2.9V

VDD2.4V

VDD1.4 VVDD0.9 V

VDD1.9 V

S-80815CL

0

5

10

15

20

25

30

0 2.0 4.0 6.0 8.0 10.0VDS (V)

I OU

T (

mA

)

Ta=25ºC

8.4 V

7.2 V

6.0 V

3.6 V

VDD2.4 V

4.8 V

7. Nch Transistor Output Current (IOUT) - Input Voltage (VDD)

0

1.5

3.0

4.5

6.0

0 0.5 1.0 1.5 2.0VDD (V)

I OU

T (m

A)

S-80814CL/CN VDS0.5 V

Ta=85°

Ta=-40°C

Ta=25°C

0

5

10

15

20

0 2.0 4.0 6.0 8.0VDD (V)

I OU

T (m

A)

S-80860CL/CN VDS0.5 V

Ta=-40°C

Ta=25°C

Ta=85°C

8. Pch Transistor Output Current (IOUT) - Input Voltage (VDD)

0

0.5

1.0

1.5

2.0

2.5

3.0

0 1.0 2.0 3.0 4.0 5.0 6.0

VDD (V)

I OU

T (

mA

)

S-80808CL VDS0.5 V

Ta=-40°C

Ta=25°C

Ta=85°C

0

1

2

3

4

5

6

0 2.0 4.0 6.0 8.0 10.0 12.0

VDD (V)

I OU

T (

mA

)

S-80815CL VDS0.5 V

Ta=-40°C

Ta=25°C

Ta=85°C


33

9. Minimum Operating Voltage - Input Voltage (VDD)

0.0

0.3

0.6

0.9

1.2

0.0 0.2 0.4 0.6 1.0

VDD (V)

VO

UT

(V)

S-80808CN Pull-up to VDD 100 k

Ta=-40°C

Ta=25°C

Ta=85°C

0.8

0.0

1.0

2.0

3.0

4.0

0.2 0.4 0.6 0.8 1.0VDD (V)

VO

UT (

V)

S-80808CN Pull-up to 3 V

Ta=-40°C

Ta=25°C

Ta=85°C

0.0

0.5

1.0

1.5

2.0

0 0.5 1.0 1.5 2.0VDD (V)

VO

UT

(V)

S-80815CN Pull-up to VDD 100 k

Ta=-40°C

Ta=25°C

Ta=85°C

0.0

1.0

2.0

3.0

4.0

0 0.5 1.0 1.5 2.0 VDD (V)

VO

UT (

V)

S-80815CN Pull-up to 3 V

Ta=-40°C

Ta=25°C

Ta=85°C

0.30

0.35

0.40

0.45

0.50

0.55

0.60

0.65

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

PULL-UP (V)

VD

Dm

in (V

)

S-80808CN Pull-up to VDD:100 k

Ta=-40°C

Ta=25°C Ta=85°C

VOUT(V)

PULL-UP

PULL-UP0.1

0 VDD(V) VDDmin

Remark VDDmin. is defined by the VDD voltage at which VOUT goes below 10 of PULL-UP voltage when the VDD

increase from 0 V.

0.40

0.45

0.50

0.55

0.60

0.65

0.70

0.75

3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0

PULL-UP (V)

VD

Dm

in (V

)

S-80815CN Pull-up to VDD:100 k

Ta=-40°C

Ta=25°C

Ta=85°C

Figure 24


34

10. Dynamic Response - COUT

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1

Load capacitance (F)

Res

pons

e tim

e (m

s)

S-80808CL Ta=25°C

tpLH

tpHL

0.001

0.01

0.1

1

10

100

0.00001 0.0001 0.001 0.01 0.1 Load capacitance (F)

Res

opn

se t

ime

(ms)

S-80808CN Ta=25°C

tpHL

tpLH

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1

Load capacitanse (F)

Res

pons

e tim

e (m

s)

S-80814CL Ta=25°C

tpLH

tpHL

0.001

0.01

0.1

1

10

100

0.00001 0.0001 0.001 0.01 0.1 Load Capacitance (F)

Res

pons

e ti

me

(ms)

S-80814CN Ta=25°C

tpHL

tpLH

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1

Load Capacitance (F)

Res

pons

e tim

e (m

s)

S-80815CL Ta=25°C

tpLH

tpHL

0.001

0.01

0.1

1

10

100


Res

pons

e tim

e (m

s)

S-80815CN Ta=25°C

tpHL

tpLH

0.001

0.01

0.1

1


Res

pons

e tim

e (m

s)

S-80860CL Ta=25°C

tpLH

tpHL

0.001

0.01

0.1

1

10

100


Res

pone

tim

e (m

s)

S-80860CN Ta=25°C

tpHL

tpLH


35

VIH

Output voltage

Input voltagae

VIL

VDD

tpHL tpLH

VIH10 V, VIL0.95 V

1 s1 s

VDD10 %

VDD90 %

OUT

VSS

VDD

S-808xxC Series V

R*1

100 k

COUT

VDD

V

*1. R is unnecessary for CMOS output products.

Figure 25 Measurement Condition for Response Time Figure 26 Measurement Circuit for Response Time Caution The above connection diagram and constants do not guarantee correct operation. Perform

sufficient evaluation using the actual application to set the constants. Application Circuit Examples

1. Microcomputer Reset Circuits

If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer needs to be initialized before normal operations can be done. Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered. Reset circuits shown in Figures 27 to 28 can be easily constructed with the help of the S-808xxC series, that has low operating voltage, a high-precision detection voltage and hysteresis.

VSS

VDD

Microcomputer S- 808xxCL

VSS

(Only for Nch open-drain products)

VDD1 VDD2

MicrocomputerS- 808xxCN

Figure 27 Reset Circuit Example(S-808xxCL) Figure 28 Reset Circuit Example (S-808xxCN)

Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants.


36

2. Power-on Reset Circuit

A power-on reset circuit can be constructed using Nch open-drain output product of S-808C Series.

(Nch open-drain products)

OUT VIN

VSS

VDD

S- 808xxCN

R*1

C

Di*2

(R75 k)

*1. Resistor R should be 75 k or less to prevent oscillation. *2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the

power falling,Di can be removed when the delay of the falling time is not important.

Figure 29

VDD

(V)

t (s)

OUT

(V)

t (s)

Figure 30

Remark When the power rises sharply as shown in the Figure 31 left, the output may goes to the high level for an instant in the undefined region where the output voltage is undefined since the power voltage is less than the minimum operation voltage.

VDD

(V)

t (s)

OUT

(V)

t (s)

Figure 31


37

3. Change of Detection Voltage

In Nch open-drain output products of the S-808xxC series, detection voltage can be changed using resistance dividers or diodes as shown in Figures 32 to 33. In Figure 32, hysteresis width also changes.

(Nch open-drain output products)

RA*1

OUT VIN

VSS

VDD

S- 808xxCN

RB

(RA75 k)

DETB

BAV

R

RRvoltagae Detection

HYSB

BAV

R

RR widthHysterisis

(Nch open-drain output product)

Vf1

OUT VIN

VSS

VDD

S- 808xxCN

Vf2

Detection voltage=Vf1+Vf2+(VDET)

*1. RA should be 75 k or less to prevent oscillation. Caution If RA and RB are large, the hysteresis

width may aloso be larger than the value given by the above equation due to the through-type current (which flows slightly in an Nch open-drain product).

Figure 32 Figure 33

Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants.

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Disclaimers (Handling Precautions)

1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice.

2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not responsible for damages caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein.

3. ABLIC Inc. is not responsible for damages caused by the incorrect information described herein.

4. Be careful to use the products within their specified ranges. Pay special attention to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not responsible for damages caused by failures and / or accidents, etc. that occur due to the use of the products outside their specified ranges.

5. When using the products, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use.

6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures.

7. The products must not be used or provided (exported) for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not responsible for any provision (export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons, missiles, or other military use.

8. The products are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses. Do not apply the products to the above listed devices and equipments without prior written permission by ABLIC Inc. Especially, the products cannot be used for life support devices, devices implanted in the human body and devices that directly affect human life, etc. Prior consultation with our sales office is required when considering the above uses. ABLIC Inc. is not responsible for damages caused by unauthorized or unspecified use of our products.

9. Semiconductor products may fail or malfunction with some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system must be sufficiently evaluated and applied on customer's own responsibility.

10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use.

11. The products do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc.

12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.

13. The information described herein contains copyright information and know-how of ABLIC Inc. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this document described herein for the purpose of disclosing it to a third-party without the express permission of ABLIC Inc. is strictly prohibited.

14. For more details on the information described herein, contact our sales office.

2.0-2018.01

www.ablicinc.com

s-808xxc series

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