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General Description

IT(RMS) VDRM IDRM VTM ITSM RS dv/dt di/dt

(7) (8) (5) (9)

MAX MIN MIN MAX MAX MAX Max 60Hz 50Hz MIN MIN TYP

K1050S 1 ±90 95 113 5 150 1.5 20 16.7 0.1 1500 150

K1100S 1 ±90 104 118 5 150 1.5 20 16.7 0.1 1500 150

K1200S 1 ±90 110 125 5 150 1.5 20 16.7 0.1 1500 150

K1300S 1 ±90 120 138 5 150 1.5 20 16.7 0.1 1500 150

K1400S 1 ±90 130 146 5 150 1.5 20 16.7 0.1 1500 150

K1500S 1 ±90 140 170 5 150 1.5 20 16.7 0.1 1500 150

K2000S 1 ±180 190 215 5 150 1.5 20 16.7 0.1 1500 150

K2200S 1 ±180 205 230 5 150 1.5 20 16.7 0.1 1500 150

K2400S 1 ±190 220 250 5 150 1.5 20 16.7 0.1 1500 150

K2500S 1 ±200 240 280 5 150 1.5 20 16.7 0.1 1500 150

KS --- SERIES

Type

60

SIDAC VBO: 95 - 280 Volts

60

available for custom design applications. Please

60

holding current of the device. ◇ Switching voltages in the range of 95 V to 330 V. ◇ Sidacs feature glass-passivated junctions that ensure

SMB

60

IBO

mA

TYP

60

µA

10

MAX

10

10

A V V µ A kΩ V/µSec A/µSec

｡� A sidac is a silicon bilateral voltage triggered switch, with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac switches on, through a negative resistance region, to a a low on-state voltage. Conduction will continue until the current is interrupted or drops below the minimum

consult the factory for more information.

IH(3) (4)

long term reliability and stable characteristics by creating a rugged, reliable barrier against junction contamination. ◇ Variations of devices covered in this data sheet are

VBO

(1)

10

10

60

60

60

60

60

10

10

10

10

V A

10

1.

Dimensions are in inches and (millimeters)

0.205(5.21)0.220(5.59)

0.030(0.76)0.060(1.52)

0.084(2.13)0.096(2.44)

0.077(1.95)0.086(2.20)

0.008(0.203)MAX

0.160(4.06)0.180(4.57)

0.006(0.152)0.012(0.305)

0.155(3.94)0.130(3.30)

SAMYANG ELECTRONICSSAM YANG

+I

-V +V

IT

IH

IS

IBOIDRM

VT

VDRM

VSVBO

RS(VBO-VS)(IS-IBO)

RS

SUPPLY FREQUENCY: 60 Hz SinusoidalLOAD: ResistiveRMS ON-STATE CURRENT: IT RMS Maximum RatedValue at Specified Junction Temperature

BLOCKING CAPABILITY MAY BE LOSTDURING AND IMMEDIATELYFOLLOWING SURGE CURRENTINTERVALOVERLOAD MAY NOT BE REPEATEDUNTIL JUNCTION TEMPERATUREHAS RETURNED TO STEADY-STATERATED VALUE.

1.0 10 10001001.0

2.0

40

100

4.0

108.06.0

20

Surge Current Duration - Full Cycles P

eak

Sur

ge (N

onR

epet

itive

)O

n-St

ate

Cur

rent

[ITS

M] -

Am

ps

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2.

(9) For best Sidac operation, the load impedance should be near or

less than sw itching resistance. RS — Switching resistance RS= 50/60 Hz sine wave

(VBO-VS)

◇ All measurements are made at 60Hz w ith a resistive load at an

of this catalog. ◇ Junction temperature range (TJ) is -40°C to +125°C. ◇ Lead solder temperature is a maximum of +230°C for 10 seconds

ambient temperature of +25°C unless otherw ise specified.

VDRM — Repetitive peak off-state voltage

(IS-IBO)

VBO — Breakover voltage 50/60 Hz sine wave

maximum; ≥ 1/16" (1.59mm) from case.

◇ Storage temperature range (TS) is -65°C to +150°C. ◇ The case (TC) or lead (TL) temperature is measured as shown on the dimensional outline draw ings. See “Package Dimensions” section

VTM — Peak on-state voltage, IT = 1 Amp

General Notes

IDRM — Repetitive peak off-state current 50/60 Hz sine wave; V = VDRM (5) See Figure 9.1 for more than one full cycle rating.

IH — Dynamic holding current 50/60 Hz sine wave; R = 100Ω (6) R JA Type 41 is 70° C/W.

IT(RMS) — On-state RMS current TJ ≤ 125°C 50/60 Hz sine wave (7) TL ≤ 100°C

ITSM — Peak one cycle surge current 50/60 Hz sine wave (nonrepetitive) (8) See Figure 9.14 for clarification of Sidac operation.

Specific Test Conditions Electrical Specification Notes di/dt — Critical rate-of-rise of on-state current (1) See Figure 9.5 for VBO change vs junction temperature.

100°C (3) See Figure 9.2 for IH vs case temperature.

IBO — Breakover current 50/60 Hz sine w ave (4) See Figure 9.13 for test circuit.

(2) See Figure 9.6 for IBO vs junction temperature. dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM; TJ ≤

RATINGS AND CHARACTERISTIC CURVES KS --- SERIES

V-I CHARACTERISTICS FIG.1-- PEAK SURGE CURRENT vs SURGE CURRENTFFFFFFFF DURATION

0.60.8

12

468

10

20

406080

100

200

400600

4 6 8 2 164 8 2 64 82 x 10-3 1 x 10-2 1 x 10-1

Pulse base width (to) - mSec.

Rep

etiti

ve P

eak

On-

Stat

e C

urre

nt (I

TRM) -

Am

ps

f=20 kHz

f=10 kHz

f=5 kHz

f=1 kHz

f=100 kHz

f=10 kHz

Repetition Frequency f=5 Hz

Non- Repeated

tol/f

CurrentVBO Firing

ITRM

Waveform

di/dt Limit Line

TJ=125o C Max

140

120

80

100

20

40

60

26

0 0.2 0.4 0.6 0.8 1.0

Max

imum

Allo

wab

le A

mbi

ent T

empe

ratu

re (T

A) -

°C

RMS On-State Current [IT(RMS)] - Amps

DO-15x

CURRENT WAVEFORM: Sinusoidal - 60 HzLOAD: Resistive or InductiveFREE AIR RATING

0

.5

1.5

1.0

2.0

-40 -15 +25 +65 +105 +125

Case Temperature (TC) - ° C

IH(T

C=2

5°C

)IH

Rat

io o

f

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BLGALAXY ELECTRICALDocument Number 0290002 3.

RATINGS AND CHARACTERISTIC CURVES KS -- SERIES

FIG.2 -- NORMALIZED DC HOLDING CURRENT vsFFFFFFFFFFF CASE/LEAD TEMPERATURE

FIG.3-- REPETITIVE PEAK ON-STATE CURRENT (ITRM)GGGGvs PULSE WIDTH at VARIOUS FREQUENCIES

FIG.4 -- MAXIMUM ALLOWABLE AMBIENTFFFFFFFFFF FFTEMPERATURE vs ON-STATE CURRENT

FIG.5 -- NORMALIZED VBO CHANGE vs JUNCTIONJJJJJJJJJJJ TEMPERATURE

FIG.6 -- NORMALIZED REPETITIVE PEAK BREAKOVERCURRENT vs JUNCTION TEMPERATURE

FIG.7 -- ON-STATE CURRENT vs ON-STATE VOLTAGEGGGGGGG(TYPICAL)

0

-2

-6

-4

-12

-10

-8

-40 -20 0 +20 +40 +60

+2

+4

+80 +120+100 +140+25

Per

cent

age

of V

BO C

hang

e - %

Junction Temperature (TJ) - ° C

76

45

1

2

3

20 40 50 60 80 90

89

100 120110 1307030

Rep

etiti

ve P

eak

Brea

kove

rC

urre

nt (I

BO) M

ultip

lier

Junction Temperature (TJ) - ° C

V=VBO

7

6

4

5

1

2

3

0 1.0 2.0 2.2 2.6 2.8

8

9

3.0 3.43.2 3.62.40.8

Posi

tive

or N

egat

ive

Inst

anta

neou

sO

n-S

tate

Cur

rent

(iT)

- A

mps

Positive or Negative Instantaneous On-State Voltage (VT) - Volts

01.2 1.61.4 1.8

TL =25° C

Kxx01G

S1

PUSHTOTEST

TRACE STOPS100Ω

1%

SWITCH TO TEST IN EACH DIRECTION

DEVICEUNDERTEST

SCOPE

S1

100-250VAC60 Hz

IPK

IH

SCOPE INDICATIONS

100Ω

2W

10μF

-250V

+

+

-

10μF450V

120VAC60Hz

XENON LAMP

K2200S

4KV

SIDAC

200-400V

TRIGGERTRANSFORMER

20:1

20MΩ

.01μF400V

24 VAC60 Hz

50V- +

10μF

4.7μF

100V 4.7 kΩ

1/2W

200V

K1200ESIDAC

H.V.IGNITOR

+-

+

-4.7μF100V 1.2μF

100-250VAC60 Hz

100-250VAC60 Hz

SIDACSCR

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4.

FIG.13 -- DYNAMIC HOLDING CURRENT TESTCIRCUIT FOR SIDACS

RATINGS AND CHARACTERISTIC CURVES KS --- SERIES

FIG.8 -- POWER DISSIPATION (TYPICAL) vs ON-STATEMMMMMMMM CURRENT

FIG.9 -- COMPARISON OF SIDAC vs SCR

FIG.10 -- LGNITOR CIRCUIT (LOW VOLTAGE INPUT) FIG.11 -- TYPICAL HIGH PRESSURE SODIUM

LAMP FIRING CIRCUIT

FIG.12 -- XENON LAMP FLASHING CIRCUIT

1.81.6

1.21.4

0.60.8

1.0

0 1 .0

2.02.2

0.8

Ave

rage

On-

Sta

te P

ower

Dis

sipa

tion

[P

D(A

V)]

- Wat

ts

RMS On-State Current [IT(RMS)] - Amps

0.4

0.2 0.60.4

0.2

CURRENT WAVEFORM: SinusoidalLOAD: Resistive or InductiveCONDUCTION ANGLE: See Figure 9.15

Kxx01G

120 VAC60 Hz

BALLAST

0.47μF400V

SIDAC

3.3 kΩ LAMP

16 mH

120 VAC

220 VAC60 Hz

220 VAC

SIDAC0.22μF

7.5 kΩ LAMP

BALLAST

INPUT

50Ω

50Ω

VBB1=10V VBB2=0

2N6127(or equivalent)

(See Note B)

RBB1=150Ω

RBB2=100Ω

VCE MONITOR

TIP-47

VCC=20V

RS=0.1Ω

IC MONITOR

100mH

+

-

+

-

TEST CIRCUIT

SIDAC VBO

0

0.63 A

5 V

0 V

INPUTVOLTAGE

COLLECTORCURRENT

10 V

VCE(sat)

　tw≈3 ms(See Note A)

tw

100 mS

VOLTAGE AND CURRENT WAVEFORMS

COLLECTORCURRENT

NOTE A: Input pulse width is increased until ICM = 0.63A.NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise thetransistor could be destroyed.

DC(IN)V ≥VBO

(a) Circuit

R

Vc

C IL

SIDAC

Rmax≤VIN-VBO

IBO

Rmin≥VIN-VTM

IH(MIN)

RL

(b) WaveformsVBO

VC

IL

t

t

LOAD100-250VAC60Hz

IH

VBO

120-145°CONDUCTION ANGLE

VBO

LOAD CURRENT

IH

VBO

IH

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5.

FIG.16 -- SIDAC ADDED TO PROTECT TRANSISTOR FOR TYPICAL TRANSISTOR INDUCTIVEVVVVVVVVVVVVVVVVVLOAD SWITCHING REQUIREMENTS

RATINGS AND CHARACTERISTIC CURVES KS --- SERIES

FIG.14 -- BASIC SIDAC CIRCUIT

FIG.15 -- RELAXATION OSCILLATOR USING a SIDAC