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Copyright@DAWIN Electronics Co., Ltd. All right reserved May. 2009 Preliminary DH2S100N020S Schottky Barrier Diode Module Description High voltage and performance of Schottky Barrier Diode suited for the high frequency type Switch Mode Power Supply. Packaged in 3DM-2NI, this device is intended for use in the secondary rectification of the applications. Features ☞ Repetitive Reverse Voltage : V RRM = 200V ☞ Low Forward Voltage Drop : V F (typ.) = 0.85V ☞ Average Forward Current : I F (AV.) = 100A @ Tc = 100℃ ☞ Extensive Characterization of Recovery Parameters ☞ Reduced EMI and RFI ☞ Non Isolation Type Package and 175℃ Operating Junction Temperature ☞ Dual SBD Construction Applications High Speed & High Power Converters, Plating System High Frequency Rectification Absolute Maximum Ratings @ T j =25℃(Per Leg) Symbol Parameter Ratings Unit Conditions V RRM V R(DC) I F(AV) I FSM I 2 t T j T stg - - - Repetitive Peak Reverse Voltage Reverse DC Voltage Average Forward Current @ Tc = 25℃ @ Tc = 100℃ Surge(non-repetitive) Forward Current I 2 t for Fusing Junction Temperature Storage Temperature Mounting Torque(M6) Terminal Torque(M6) Weight Resistive Load One Half Cycle at 60Hz, Peak Value Value for One Cycle Current, t w = 8.3ms, T j = 25℃ Start Typical Including Screws 200 160 200 100 2000 16.7* 10 3 -40 ~ 175 -40 ~ 150 4.0 3.0 95 V V A A A A 2 s ℃ ℃ N.m N.m g Non Isolation Type Device Name DH2S100N020S Common Heat Sink Non Isolation Type Equivalent Circuit Optional Information 1 2 H (Common Heat Sink) Ordering Information Equivalent Circuit and Package Package : 3DM -2NI Series Please see the package Out line information 1/4

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Page 1: Schottky Barrier Diode Module · Forward Voltage Drop VF[V] F Forward Current I [A] Performance Curves Fig. 1 : Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig

Copyright@DAWIN Electronics Co., Ltd. All right reserved

May. 2009

Preliminary

DH2S100N020S

Schottky Barrier Diode ModuleDescriptionHigh voltage and performance of Schottky Barrier Diode suited for the high frequency type Switch Mode Power Supply.Packaged in 3DM-2NI, this device is intended for use in thesecondary rectification of the applications.

Features☞ Repetitive Reverse Voltage : VRRM = 200V☞ Low Forward Voltage Drop : VF(typ.) = 0.85V ☞ Average Forward Current : IF(AV.) = 100A @ Tc = 100℃☞ Extensive Characterization of Recovery Parameters☞ Reduced EMI and RFI☞ Non Isolation Type Package and 175℃Operating Junction Temperature ☞ Dual SBD Construction

ApplicationsHigh Speed & High Power Converters, Plating System High Frequency Rectification

Absolute Maximum Ratings @ Tj=25℃(Per Leg)

Symbol Parameter Ratings UnitConditions

VRRMVR(DC)IF(AV)

IFSM

I2t

TjTstg---

Repetitive Peak Reverse VoltageReverse DC VoltageAverage Forward Current @ Tc = 25℃

@ Tc = 100℃Surge(non-repetitive) Forward CurrentI2t for Fusing

Junction TemperatureStorage TemperatureMounting Torque(M6)Terminal Torque(M6)Weight

Resistive Load

One Half Cycle at 60Hz, Peak ValueValue for One Cycle Current, tw = 8.3ms, Tj = 25℃ Start

Typical Including Screws

2001602001002000

16.7* 103

-40 ~ 175-40 ~ 150

4.03.095

VVAAA

A2s

℃℃N.mN.mg

Non Isolation Type

Device Name DH2S100N020S

Common Heat SinkNon Isolation Type

Equivalent Circuit

Optional Information

1 2

H(Common Heat Sink)

Ordering Information

Equivalent Circuit and Package

Package : 3DM -2NI Series

Please see the package Out line information

1/4

Page 2: Schottky Barrier Diode Module · Forward Voltage Drop VF[V] F Forward Current I [A] Performance Curves Fig. 1 : Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig

Copyright@DAWIN Electronics Co., Ltd. All right reserved

May. 2009

Preliminary

DH2S100N020S

Thermal Characteristics

Symbol ParameterValues

UnitConditions

Rth(j-c) Thermal Resistance(Non Isolation Type) Junction to Case

Min. Typ. Max.

0.32 ℃/W- -

Electrical Characteristics @ Tj=25℃ (unless otherwise specified)

Symbol ParameterValues

UnitConditions

VR

VFM

IRRM

Trr

Cathode Anode Breakdown Voltage Maximum Forward Voltage

Repetitive Peak Reverse Current

Reverse Recovery Time

IR = 500uA

IFM = 100A, Tc = 25℃IFM = 100A, Tc =100℃TC = 25℃,TC = 100℃, VRRM applied

IFM = 100A, VR = 100V di/dt=-200A/us

Min. Typ. Max.

-

1.11.02530

100

-

V

VVuAmA

ns

ns

200

----

-

-

-

0.850.75

--

80

110

Tc = 25℃

Tc = 100℃

2/4

Page 3: Schottky Barrier Diode Module · Forward Voltage Drop VF[V] F Forward Current I [A] Performance Curves Fig. 1 : Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig

Copyright@DAWIN Electronics Co., Ltd. All right reserved

May. 2009

Preliminary

DH2S100N020S

0

20

40

60

80

100

120

100 1000

di/dt[A/us]Re

verse

Rec

over

y Tim

e,trr,

[ns]

1

10

100

1000

0.0 0.5 1.0 1.5

Forward Voltage Drop VF[V]

Forw

ard

Curre

nt IF [A

]

Performance Curves

Fig. 1 : Typical Forward Voltage Dropvs. Instantaneous Forward Current

Fig. 2 : Typical Reverse Recovery Timevs. -di/dt

Fig. 3 : Transient Thermal Impedance(Zthjc)Characteristics

Fig. 4 : Forward Current Derating Curve

0

20

40

60

80

100

120

60 80 100 120 140 160

Case Temperature [℃]

Aver

age F

orwa

rd C

urre

nt IF(

AVG

) [A]

DC

TC=25℃

TC=100℃

3/4

0.001

0.01

0.1

1

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

Rectangular Pulse Duration[sec]

Ther

mal R

espo

nce Z

thjc[℃

/w]

Page 4: Schottky Barrier Diode Module · Forward Voltage Drop VF[V] F Forward Current I [A] Performance Curves Fig. 1 : Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig

Copyright@DAWIN Electronics Co., Ltd. All right reserved

May. 2009

Preliminary

DH2S100N020S

Package Out Line Information 3DM-2NI Series

4/4


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