sct2080ke: n-channel sic power mosfetrohmfs.rohm.com/.../discrete/sic/mosfet/sct2080ke-e.pdf ·...

SCT2080KE N-channel SiC power MOSFET

lOutlineVDSS 1200V TO-247

TO-247N

RDS(on) (Typ.) 80mΩID 40A

lFeatures lInner circuit1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

5) Simple to drive

6) Pb-free lead plating ; RoHS compliantlPackaging specifications*1

Package TO-247 TO-247N

lApplication

Type

Packing Tube

・Solar inverters Reel size (mm) -

・DC/DC converters Tape width (mm) -

・Induction heating Basic ordering unit (pcs) 30

・Motor drives Packing code C C11

Marking SCT2080KE

lAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Value Unit

Drain - Source voltage VDSS 1200 V

Continuous drain currentTc = 25°C ID

*2 40 A

Tc = 100°C ID *2 28 A

Pulsed drain current ID,pulse *3 80 A

Gate - Source voltage (DC) VGSS -6 to +22 V

Gate - Source surge voltage (ｔsurge ˂ 300nsec) VGSS_surge*4

-10 to +26 V

Total power dissipation TC=25°C, See Fig.1

PD262 W

TC=100°C, See Fig.1 130 W

Junction temperature Tj 175 °C

Range of storage temperature Tstg -55 to +175 °C

(1) Gate(2) Drain(3) Source

* Body Diode

www.rohm.com© 2019 ROHM Co., Ltd. All rights reserved.TSZ22111・14・001 1/12

TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE

UnitMin. Typ. Max.

lElectrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

V

Zero gate voltagedrain current

IDSS

VDS = 1200V, VGS = 0V

μATj = 25°C -

Drain - Source breakdownvoltage

V(BR)DSS VGS = 0V, ID = 1mA 1200 - -

1 10

Tj = 150°C - 2 -

Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA

nA

Gate threshold voltage VGS (th) VDS = VGS, ID = 4.4mA 1.6 2.8 4.0 V

Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - -100

°C/W

lThermal resistance

Parameter SymbolValues

UnitMin. Typ. Max.

Thermal resistance, junction - case RthJC - 0.44 0.57

lTypical Transient Thermal CharacteristicsSymbol Value Unit Symbol Value Unit

Ws/KRth2 1.97E-01 Cth2 1.80E-02

Rth3 1.62E-01 Cth3 2.49E-01

Rth1 7.80E-02

K/W

Cth1 5.00E-03


TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE

UnitMin. Typ. Max.

Static drain - sourceon - state resistance RDS(on)

*5

VGS = 18V, ID = 10A

lElectrical characteristics (Ta = 25°C)


mΩTj = 25°C - 80 117

Tj = 125°C - 125 -

Ω

Transconductance gfs *5 VDS = 10V, ID = 10A - 3.7 - S

Gate input resistance RG f = 1MHz, open drain - 6.3 -

pFOutput capacitance Coss VDS = 800V - 77 -

Reverse transfer capacitance Crss f = 1MHz

Input capacitance Ciss VGS = 0V - 2080 -

- 16 -

Effective output capacitance,energy related

Co(er)VGS = 0VVDS = 0V to 500V - 116 - pF

Turn - on delay time td(on) *5 VDD = 400V, VGS = 18V - 35 -

nsRise time tr

*5

Fall time tf *5 RG = 0Ω - 22 -

ID = 10A - 36 -

Turn - off delay time td(off) *5 RL = 40Ω - 76 -

μJ

Turn - off switching loss Eoff *5 - 51 -

Turn - on switching loss Eon *5 VDD = 600V, ID=10A

VGS = 18V/0VRG = 0Ω, L=500μH*Eon includes diode reverse recovery

- 174 -

- 106 -

lGate Charge characteristics (Ta = 25°C)


UnitMin. Typ. Max.

V

- 31 -

Gate plateau voltage V(plateau) VDD = 400V, ID = 10A - 9.7 -

nCGate - Source charge Qgs *5 ID = 10A - 27 -

Gate - Drain charge Qgd *5 VGS = 18V

Total gate charge Qg *5 VDD = 400V


TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE

*2 Limited only by maximum temperature allowed.

*3 PW 10μs, Duty cycle 1%

*4 Example of acceptable VGS waveform

*5 Pulsed

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)


UnitMin. Typ. Max.

A

Body diode direct current,pulsed ISM *3 - - 80 A

Body diode continuous,forward current IS *2

Tc = 25°C

- - 40

V

Reverse recovery time trr *5

IF = 10A, VR = 400Vdi/dt = 150A/μs

- 31 - ns

Reverse recovery charge Qrr *5

Forward voltage VSD *5 VGS = 0V, IS = 10A - 4.6 -

*1 Tolerances of dimensions and packing specifications slightly differ between TO-247 and TO-247N, which is unlikely to influence compatibility for mounting. Please refer to corresponding specifications of dimensions for more details.

- 44 - nC

Peak reverse recovery current Irrm *5 - 2.3 - A


TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE

lElectrical characteristic curves

　

0.1

1

10

100

0.1 1 10 100 1000 10000

Ta = 25ºCSingle Pulse

Operation in thisarea is limitedby RDS(ON)

PW = 10ms

PW = 100us

PW = 1ms

PW = 100ms

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Ta = 25ºCSingle

0

50

100

150

200

250

300

25 75 125 175

Fig.1 Power Dissipation Derating Curve

Pow

er D

issi

patio

n :

P D[W

]

Junction Temperature : Tj [ºC]

Fig.2 Maximum Safe Operating Area

Dra

in C

urre

nt :

I D[A

]

Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal Resistance vs. Pulse Width

Tran

sien

t The

rmal

Res

ista

nce

: Rth

[K/W

]

Pulse Width : PW [s]


TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE


0

2

4

6

8

10

12

14

16

18

20

0 1 2 3 4 5

Ta = 150ºCPulsed

VGS= 10V

VGS= 18VVGS= 16V

VGS= 14V

VGS= 12V

VGS= 20V

0

5

10

15

20

25

30

35

40

0 2 4 6 8 10

Ta = 150ºCPulsed

VGS= 14V

VGS = 10V

VGS= 18V

VGS= 16V VGS= 12V

VGS= 20V

0

2

4

6

8

10

12

14

16

18

20

0 1 2 3 4 5

Ta = 25ºCPulsed

VGS= 10V

VGS= 12V

VGS= 14V

VGS= 16VVGS= 18V

VGS= 20V

Fig.4 Typical Output Characteristics(I)

Dra

in C

urre

nt :

I D[A

]


Fig.5 Typical Output Characteristics(II)

Dra

in C

urre

nt :

I D[A

]


Fig.6 Typical Output Characteristics(I)

Dra

in C

urre

nt :

I D[A

]


Fig.7 Typical Output Characteristics(II)

Dra

in C

urre

nt :

I D[A

]


0

5

10

15

20

25

30

35

40

0 2 4 6 8 10

Ta = 25ºCPulsed

VGS= 12V

VGS= 10V

VGS= 14V

VGS= 16VVGS= 20V

VGS= 18V


TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE


0.01

0.1

1

10

0.01 0.1 1 10 100

VDS = 10VPulsed

Ta = 150ºCTa = 75ºCTa = 25ºCTa = -25ºC

0

5

10

15

20

25

30

35

40

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºCTa= 75ºCTa= 25ºCTa= -25ºC

VDS = 10VPulsed

Fig.8 Typical Transfer Characteristics

Dra

in C

urre

nt :

I D[A

]

Gate - Source Voltage : VGS [V]

Fig.10 Gate Threshold Voltagevs. Junction Temperature

Gat

e Th

resh

old

Volta

ge :

V G

S(th

)[V

]


Fig.11 Transconductance vs. Drain Current

Tran

scon

duct

ance

: g f

s[S

]

Drain Current : ID [A]

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

-50 0 50 100 150

VDS = 10VID = 10mA

0.01

0.1

1

10

100

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºCTa= 75ºCTa= 25ºCTa= -25ºC

VDS = 10VPulsed

Fig.9 Typical Transfer Characteristics (II)

Dra

in C

urre

nt :

I D[A

]



TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE


0.01

0.1

1

0.1 1 10 100

VGS = 18VPulsed


Fig.12 Static Drain - Source On - StateResistance vs. Gate - Source Voltage

Stat

ic D

rain

-So

urce

On-

Stat

e R

esis

tanc

e : R

DS(

on)[Ω

]


Fig.13 Static Drain - Source On - StateResistance vs. Junction Temperature

Stat

ic D

rain

-So

urce

On-

Stat

e R

esis

tanc

e : R

DS(

on)[Ω

]


Fig.14 Static Drain - Source On - StateResistance vs. Drain Current

Stat

ic D

rain

-So

urce

On-

Stat

e R

esis

tanc

e : R

DS(

on)[Ω

]


0

0.2

0.4

0.6

0.8

6 8 10 12 14 16 18 20 22

ID = 10A

ID = 20A

Ta = 25ºC

0

0.05

0.1

0.15

-50 0 50 100 150

VGS = 18VPulsed

ID = 10A

ID = 20A


TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE


0

10

20

30

40

0 200 400 600 800

Ta = 25ºC

Fig.15 Typical Capacitancevs. Drain - Source Voltage

1

10

100

1000

10000

0.1 1 10 100 1000

Ciss

Coss

Crss

Ta = 25ºCf = 1MHzVGS = 0V

Cap

acita

nce

: C [p

F]


Fig.16 Coss Stored Energy

Cos

sSt

ored

Ene

rgy

: EO

SS[u

J]


Fig.17 Switching Characteristics

Switc

hing

Tim

e : t

[ns]


Fig.18 Dynamic Input Characteristics

Gat

e -S

ourc

e Vo

ltage

: V G

S[V

]

Total Gate Charge : Qg [nC]

0

5

10

15

20

0 20 40 60 80 100 120

Ta = 25ºCVDD = 400VID = 10APulsed

1

10

100

1000

10000

0.01 0.1 1 10 100

tf

td(on)

td(off)

Ta = 25ºCVDD = 400VVGS = 18VRG = 0ΩPulsed

tr


TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE


0100200300400500600700800900

100011001200

0 5 10 15 20 25 30 35

Ta = 25ºCVDD=600VVGS = 18V/0VRG=0ΩL=500μH Eon

Eoff

0

50

100

150

200

250

300

0 200 400 600 800 1000

Ta = 25ºCID=10AVGS = 18V/0VRG=0ΩL=500μH

Eon

Eoff

0

50

100

150

200

250

300

350

400

450

500

0 5 10 15 20 25 30

Ta = 25ºCVDD=600VID=10AVGS = 18V/0VL=500μH

Eon

Eoff

Fig.19 Typical Switching Lossvs. Drain - Source Voltage

Switc

hing

Ene

rgy

: E [μ

J]


Fig.20 Typical Switching Lossvs. Drain Current

Switc

hing

Ene

rgy

: E [μ

J]

Drain - Current : ID [A]

Fig.21 Typical Switching Lossvs. External Gate Resistance

Switc

hing

Ene

rgy

: E [μ

J]

External Gate Resistance : RG [Ω]


TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE


0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8

VGS = 0VPulsed


Fig.22 Body Diode Forward Currentvs. Source - Drain Voltage

Body

Dio

de F

orw

ard

Cur

rent

: I S

[A]

Source - Drain Voltage : VSD [V]

Fig.23 Reverse Recovery Timevs.Body Diode Forward Current

Rev

erse

Rec

over

y Ti

me

: trr

[ns]

Body Diode Forward Current : IS [A]

10

100

1000

1 10 100

Ta = 25ºCdi / dt = 150A / μsVR = 400VVGS = 0VPulsed


TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

SCT2080KE

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

VsurgeIrr

Eon = ID×VDS Eoff = ID×VDS

ID

VDS

Same type device as D.U.T.

D.U.T.

ID


TSQ50210-SCT2080KE28.Mar.2019 - rev.004

Datasheet

R1102Swww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

Notice

ROHM Customer Support System http://www.rohm.com/contact/

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

N o t e s

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifica-tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.

1)

2)

3)

4)

5)

6)

7)

8)

9)

10)

11)

12)

13)

sct2080ke: n-channel sic power mosfetrohmfs.rohm.com/.../discrete/sic/mosfet/sct2080ke-e.pdf ·...

Documents