semiconductor assembly: a failure analysis perspective · the impact of plated layer contamination...
TRANSCRIPT
TheImpactofPlatedLayerContaminationon
SemiconductorAssembly:AFailureAnalysisPerspective
Jonathan Harris, CMC Laboratories, Inc.September 2016
OrganiccontaminationofplatedAupadsresultinginnon-stickAlwirebonds
• Issue:5%wirebondnon-sticks,AlwirebondedtoplatedAupads,HTCCceramicpackage
• Pad:Wmetalpad,4µmplatedNi(sulfamate),3µmplatedtypeIIIAu(forKAuCN bath)
PlanViewSEMAnalysisofAuPads
Plated Au- Wirebond FA
Plated Au- Plated Au from New Plating Bath
Micro-hardnessMeasurement
1.Preparecrosssectionofplatedlayers
2.Micro-hardnessmeasurementincrosssection
Observations:PlatedAuforFailedvs.As-Plated(NewBath)
• AuGrainSize:– Failedlothadsub-microngrains– Newbathas-platedAuhadgrains>5µm
• Porosity– FailedlotAulayerwasporous– Newbathas-platedAuwasfullydense
• Hardness– FailedLotdeposithardness>85Hv– Newbathdeposithardness=70Hv
AuBathDegradationwithUse=RootCauseofWirebondFailure
NewBath:LargeGrains,Soft,Dense
Organicadditives=longchainorganicmoleculestocontrolgrainssizeandpromoteuniformthickness(Brighteners,Levelers)
OldBath:SmallGrains,Hard,
Porous
Bath Use
LongChainOrganicMoleculesbreakdowntosmallchainfragments.Becomeencorporated inplatedlayer
Encorporation oforganics=smallgrainsandhard,porousdeposit
Fresh Plating Bath
Bath after 30 days of use
Longchainorganicsinbath.Notencorporated inlayer.SoftAu,largegrainsNowirebondissues.
Bath after activated carbon treatment
Shortchainorganicsinbath.Encorporated inlayer.HardAu,porous,smallgrainsWirebondnon-sticks
Longchainorganicsinbath.Notencorporated inlayer.Nowirebondissues.
MetallicImpurityInducedVoidinginAuAl Wirebonds
• Issue:AlwireonAupad,powerdevice,wirebondfailureafterburn-in
• FailureAnalysisApproach:crosssectionthroughwirebondadjacenttofailedbond(sameplatedlayer,samethermalhistoryasfailedbond)
• Augeranalysisforcontaminationonpad(awayfromwirebondarea)
Observe:VoidingbetweenAuplatingandAu-richIMC
AugerAnalysisofPad
HighlevelofNicontaminationonsurfaceofAupad(innon-bondedarea)
SummaryofFindings
• ExtensivevoidingatinterfacebetweenplatedAuandAuAl IMC.
• NicontaminationonsurfaceoftheAupadpriortobonding
RootCause- Horsting MechanismforWirebondFailure
• Horsting,C.W.,“PurplePlagueandGoldPurity,”10thAnnualProc.IEEEReliabilityPhysicsSymp.,LasVegas,Nevada,1972,pp.155-158.
• Contaminationacceleratedvoiding
xx x
xx x
xx
AlWire
x
Beforebond
xx x
xx x
xx
AlWire
x
Auwithimpurties
IMC
Justafterbond
x x xx
AlWire
Afterthermalexposure=IMCgrowsthicker=impuritiesconcentrateatIMC/Auinterface=promotesvoidformation
x x x x x x x x x
Horsting Effect
Ni from Au layer concentrates at the Au/IMC interface => void formation at the interface=> Voiding leads to wirebond failure
NiContaminationonAuPad-ContaminationMechanisms
• NicontaminationofAuplatingbaththrough”drag-out”
• NiatomgrainboundarydiffusionthroughtheAulayer
AuSn DieAttachVoiding->CuNodules
• LEDdevicecolorshiftassociatedwithdieheating
• Dieattachlayer=AuSn• Crosssectionshowsdieattachvoids• ThickCudieattachpadplatedwithNiandAg• RoughCulayerisobserved->CunodulesonsurfaceplatedoverwithNiandAu