semiconductor nanocrystal quantum dotstjs/4700/lec20/nanocrystal_elec4705.pdf · 9/21/04 - s...
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9/21/04 - S McGarry 1 of some large but finite number
Semiconductor Nanocrystal Quantum Dots
S. McGarrySept. 23, 2004
9/21/04 - S McGarry 2 of some large but finite number
Outline
1. Quantum Devices- Particle in a Box
2. Quantum Dots- Particle in a Sphere
3. Quantum Size Effect
4. Nanocrystal Growth
5. Biological Tagging
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Quantum Devices
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Quantum Well Review
Thin semiconductor layer(s) with reduced bandgapresult in quantum confinement
2
*
2
2
=
zn L
nm
Eπh
( ) ( ) ( ) ( )zEzzVdz
zd
mnψψψ =+− 2
2
*
2
2h
( ) ( )zEdz
zd
mnψ
ψ =− 2
2
*
2
2h
Time-independent Schrödinger eqn –
Infinite well –
Boundary conditions –
Eigenfunctions –
Energy levels (Eigenvalues) –
( )
=
znn L
znAz
πψ sin
( ) ( ) 00 == zLψψ
=22
2
*
11hdk
Ed
m
9/21/04 - S McGarry 5 of some large but finite number
Size Quantization Effect
Nann, T., Polymers and Adhesives in Microelectronics and Photonics, 2001. First International IEEE Conference on , 2001, 49-53
Molecules Nanoparticles Bulk Semiconductors
Bad Gap
Ener
gy
LUMO
HOMO
ConductionBand
ValanceBand
Density of states versus dimensionality
Available energy levels versus material type
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Single QW Semiconductor Structure
n=3
n=2
n=2
n=1
n=1
well bandgap energy, Eg
conductionband offset
valenceband offset
barrierbandgapenergy
Lz
exhn
enga BEEEE −++=
2
*
2
2
=
zn L
nm
Eπh
HRTEM of Single Quantum Well
+
-
Bohr radiusof exciton, aB
Exciton Orbit
9/21/04 - S McGarry 7 of some large but finite number
Bulk Free Space EA Structure
Optical modulator based on a PIN diode structure
p+-cap
i-active
n--contact
N- or SIsubstrate
P+-contact
Light in
Light out
Anode
Cathode
Generic Transmission EA Device Structure
Transmission Devices– grown doped layers are
transparent at operatingwavelength
– may be necessary to etch awaysubstrate in some materialsystems (i.e. GaAs/AlGaAs)
– waveguide devices more common
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Bulk Semiconductor Absorption
Absorption and band structure
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Bulk Semiconductor Absorption
Optical absorption is important for many types of semiconductor device– e.g. electroabsorption (EA) modulators– rely on change in absorption with applied reverse bias to a PIN diode structure– early EAs used the Franz-Keldysh Effect (FKE) in bulk material– Applied field causes band sloping →→ change in absorption edge
Vd=0
Vd=-5
Vd=-10
λop
abs.
ER
FKE EA Modulator Characteristic
hν
A
Photon Energy
Franz-Keldysh EffectTypical band structure of a direct-gap semiconductor
(Actually is a little more complicated - there are excitonic effects but Eb~4.2meV)
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MQW- EA (or SEED) Structure
Also based on a PIN diode structure
p+-cap
i-MQW
n--contact
N- or SIsubstrate
P+-contact
Light in
Light out
Anode
Cathode
Generic Transmission MQW-EA/SEED Device Structure
Transmission Devices– quantum wells grown using
MBE, MOCVD or CBE– reflection and F-P devices also
possible through mirror stackgrowth
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Quantum Well Confinment
Modern EAs (and SEEDs) utilize the Quantum-Confined StarkEffect (QCSE)
– stronger effect than FKE -> smaller interaction length required» still need many wells for a vertical device
– trade-off with wavelength sensitivity
Vd=0
Vd=-5
Vd=-10
λop
abs. ER
QCSE EA Modulator Characteristic
hν
A
Photon Energy
Ý Behaviour is a little more complex in the case due toquantum effects
Ý Note there are two regimes in which this can be used
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QCSE - Putting it all together
EgEω Eω’
Vapp=0 Vapp>0
Vd=0
Vd=-5
Vd=-10
λop
abs. ER
QCSE EA Modulator Characteristic
hν
A
Photon Energy
QCSE Band Tilt Shift
QCSE Exciton Energy Shift (also causes field ionization)
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Quantum Dots
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What are Quantum Dots
X Quantum dots are nanometer-sized semiconductorcrystals with size-dependent optical, physical, electronicand chemical properties
– highest degree of quantum confinement available
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Properties of Semiconductor QDs
ä Size-tuneable properties
ä Discrete optical exciton transitions
ä Large oscillator strengths & nonlinear response
ä Highly luminescent
ä Photochemically robust
ä Compatible with a variety of hostsä(e.g. SiO2, polymer, etc.)
ä Act as a “molecular semiconductor”
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Particle in a Sphere
9/21/04 - S McGarry 17 of some large but finite number
Particle in a Sphere
Effects seen in a spherical nanoparticle can be modeledas quantum confinement in a sphere
2
*
2
2
=
amE nl
r
nl
κh
( )( ) ( ) ( ) 011 222
2
=
−++− rRk
r
ll
dr
rrRd
rnl
nl
T-I Schrödinger eqn separable –
Radial T-I Schrödinger eqn –
Boundary condition –
Eigenfunctions –
Energy levels (Eigenvalues) –
( ) ( )( )nll
nllnl j
arj
arR
κκ
13
2+
=
( ) 0=aRnl
+=
***
111
her mmm
( ) ( ) ( )φθψ ,lmnlnlm YrRz =
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Particle in a Sphere
Spherical Harmonics
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P. K. SEN, J. T. ANDREWS, Superlattices and Microstructures, Vol. 29, No. 4, 2001
Rnl
r
goe Ea
eam
248.0786.12
22
*
2
−−
+=
εκωω h
hh 2
2
2 Bt
Ram
Eh=
boeob E∆−= ωω hh 2
Excitons in a Sphere
NC exciton energy -
NC biexciton energy -
where
+
-
Bohr radiusof exciton, aB
Exciton Orbit
+-
Biexciton “Molecule”
+-
+-
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Exitons in a Sphere - other issues
ä Optical phononsäpolar coupling depends on charge distribution
ä Acoustic phononsädeformation modes of the sphere - E~1/a
ä Phonon bottleneckädoes it really exists - none observed in II-VIs (Moire effect?)
ä Augeräa moderate optical powers biexciton-Auger can occur
äone high energy carrier ejected to the matrix
älong return time for ejected carrier (up to 10 min. observed)
äsignificant problem for NLO applications (including amps)
9/21/04 - S McGarry 21 of some large but finite number
Effect of confinement on mass*
ä For little or no confinement with a > aB
the Coulomb force dominates and theexciton acts as a single particle so:
a > aB a < aB
a → ∞
2
*
2
2
=
amE nl
r
nl
κh
***her mmm +=
***111
her mmm+=
ä For strong confinement with a < aB thewave functions of the electron and holeare decoupled by the dominantquantizations effect so:
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Quantum Size Effect
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Engineering Desired Properties
äControl of NC size determines
äLinear optical properties
äNonlinear optical response
äLuminescence wavelength
äElectrical properties
äEtc.
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Bohr diameter and mass*
Exciton Bohr diameters and band gap energies forvarious semiconductors.
Electron and hole masses for varioussemiconductors.
Remember - ballistic) (also 21 ,25 where ==∝ −∗impurityphononm ααµ α
T. J. Bukowski et al, Critical Reviews in Solid State and Materials Sciences, 27(3/4):119–142(2002)
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Quantum Well Review
Relative degree of bandgap energy shifts due
to quantumconfinement for several
direct and indirectsemiconductors.
Energy band diagrams for germanium, Ge,and cadmium telluride, CdTe.
Absorbance vs.wavelength for a Ge film
and for various Gequantum dots 150 Å, 46 Å,12 Å, and 4 Å in diameter.
T. J. Bukowski et al, Critical Reviews in Solid State and Materials Sciences, 27(3/4):119–142(2002)
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Quantum Confinement
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Finite Size Distribution - Polydispersity
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Nanocrystal Growth
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Island Growth of QDs
Structural characteristics of In Ga As–GaAs self-organized QD’s:(a) AFM image,(b) cross-sectional TEM image of single dot and its schematic,illustrating a near-pyramidal shape, and(c) XTEM image of 4 layers of vertically coupled dots with 15 Å ofGaAs barrier layers in between.
Typical ridge-guide structure containingarrays of InGaAs QDs clad in GaAs
grown by MOCVD.
BHATTACHARYA et al., IEEE JOUR OF SEL TOP IN QUANT ELECTS, VOL. 6, NO. 3, MAY/JUNE 2000
BORRI et al, IEEE JOUR OF SEL TOP IN QUANT ELECTS, VOL. 8, NO. 5, Sept/Oct 2002
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Chemical Synthesis of Nanocrystals
C. B. MURRAY ET AL. IBM J. RES. & DEV. VOL. 45 NO. 1 JANUARY 2001
(a) synthesize NC samples by high-temperature solution-phase routes - usually using hot surfactant, n-trctylphosphine oxide (TOPO)
(b) narrow the NC sample size distribution by size-selective precipitation
(c) deposit NC dispersions that self-assemble
(d) form ordered NC assemblies (superlattices) or disperse
9/21/04 - S McGarry 31 of some large but finite number
Colloidal Materials
äColloidal NCs are mostly II-VI materials
äCdSe, CdTe, CdS
äHgSe, HgTe, HgS
äPbSe, PbS
äZnS
äEtc.
äMost common - CdSe & CdTe
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Chemical Synthesis of Nanocrystals
Alivisatos, J. Phys. Chem., Vol. 100, No. 31, 1996
Transmission electron microscopy study of the growth of a CdS/HgS/CdS quantum dot quantum well. The micrograph of a CdS core cluster (a2) exhibits tetrahedral morphology which is in agreement with TEMsimulation (a3). The corresponding molecular model (a1) shows that all surfaces are Cd terminated (111). Picture (b) shows a model of the CdS particle after surface modification with Hg. A typical micrograph of atetrahedral CdS/HgS/CdS nanocrystals is shown in (c2) along with a corresponding model (c1). Model (d1) and micrograph (d2) represent a CdS/HgS/CdS nanocrystal after winned epitaxial growth. The arrowmarks the interfacial layer exhibiting increases contrast due to the presence of HgS, in agreement with the simulation (d3). No contrast is seen in a simulation of a model with all Hg replaced by Cd (d4).
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CdSe Nanorods and Fractal Nanocrystals
Evolution from CdSe fractals to nanorods based on reaction temperature
XRD patterns of CdSe nanocrystals
HRTEM images of CdSe fractals:
(a) a typical fractal tip
(b) crossed branches
(c) partial enlarged detail of two crossedbranches in the black frame of b.
Qing Peng et al, Inorganic Chemistry, Vol. 41, No. 20, 2002
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Dispersal of NCs in Opal Matrix
S.V. Gaponenko et al., Journal of Luminescence 87-89 (2000) 152-156
Opal structure - spheres representvoids connected by channels
Modification of the spontaneous emission of CdTe nanocrystals embeddedin opal. Nanocrystal mean diameter is 2.4 nm.(a) Optical reflection spectrum of opal sample(b) modified spontaneous emission spectrum of CdTe nanocrystals in opal(c) reference emission spectrum of CdTe nanocrystals in free space.
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Growth of CdTe Nanocrystals
Absorption spectra (normalized to the firstabsorption maximum, except for 5 and 6.5 min)
Emission spectra (normalized to the emissionmaximum, λex = 400 nm)
Average size of CdTe QDs (diluted in toluene)taken for a synthesis at 165 C at different timeintervals.
All spectra recorded at room temperature.
S. F. Wuister et al, Phys. Chem. Chem. Phys., 2003, 5, 1253–1258
- synthesized in a mixture of TOP and DDA- fast initial growth is observed in the first 30 min followed by a slower growth to the final particle size- luminescence lifetimes of up to approximately 10 ns
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Biological Tagging
9/21/04 - S McGarry 37 of some large but finite number
An Array of QD Luminescent Tags
Ten distinguishable emission colors of ZnS capped CdSeQDs excited with a near-UV lamp. From left to right (blue to
red), the emission maxima are located at:
443, 473, 481,500, 518, 543, 565, 587, 610, and 655 nm.
Luminescent quantum dots for multiplexed biological detection and imaging Chan et al.
9/21/04 - S McGarry 38 of some large but finite number
QDs vs Dye Molecule Tags
ä Protein coated QDs very stable (>2yrs)
ä Narrow spectral width (FWHM~25nm)
ä Broad excitation spectrum
ä High quantum yields (40-50%)
ä High cross-section
ä Low photobleaching
ä Compared to rhodamine 6G
ä 20x brighter
ä 100-200x more stable
Excitation
Emission
ZnS-capped CdSe QDs grown in TOPO
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Attaching the Tag
Tagging can be accomplished in anumber of ways:
(a) Use of a bifunctional ligand linking QDs tobiomolecules
(b) TOPO-capped QDs bound to a modifiedacrylic acid polymer by hydrophobicforces.
(c) QD solubilization and bioconjugation usinga mercaptosilane compound
(d) Positively charged biomolecules are linkedto negatively charged QDs by electrostaticattraction
(e) Incorporation of QDs in microbeads andnanobeads
Micro/nanobeads can individually carry a“code” to expand tag range
9/21/04 - S McGarry 40 of some large but finite number
QD Flourescent Tags in Action
Fluorescence micrograph of amixture of CdSe/ZnS QD-taggedbeads emitting single colorsignals at:
484, 508, 547, 575, and 611 nm
Fluorescence imaging of folate-conjugated QDsinside human cancer cells.
(a) Brightfield image of control KB cell (withoutQDs).
(b) KB cell incubated with folate-conjugated QDs.
(c) KB cell incubated with bovine serumalbumin-conjugated QDs.
Receptor-mediated endocytosis occurs onlywhen the QDs are conjugated to folic acid, whichis recognized by folate receptors overexpressedon the surface of cancer cells.
(a) (b) (c)
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Sorting with DNA
Gerion et al., J. AM. CHEM. SOC. 9 VOL. 124, NO. 24, 2002
The fluorescence of the solution(in black) is the superposition ofthe fluorescence of four differentDNA-nanocrystal samples. Allspectra are normalized.
The fluorescence spectrum ofthe squares (color) showssignificant narrowing comparedto that of the solution (black),and each set of squares has acharacteristically differentspectrum.
The same solution is exposed tofour substrates, each beingactivated with a differentoligonucleotide. The goldpatterns exhibit a strongfluorescence with a minimalbackground signal. The capturetime is 5 s.
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Conclusions
• A very cross-disciplinary field requiring a varietyof scientific and engineering expertise
• Many exciting applications emerging in a numberof disparate fields
• enhanced optoelectronic devices• NLO “all-optical” elements• Biological cross-over applications• etc.
• Semiconductor nanocrystals/QDs now “ready forprime-time” in some applications