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Standard IGBT Modules

600V, 1200V, 1700V

Norbert SchäferProduct Management

+49 911 6559 317norbert.schaefer@semikron.com

SEMITRANS® Standard IGBT Modules

www.semikron.com

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SEMITRANS

Agenda

1. Overview

2. Basics

3. Chiptechnologies

3.1 IGBT-Chips

3.2 CAL-Diode-Chips

4. Advantages

5. Market Information

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SEMITRANS

Agenda

1. Overview

2. Basics

3. Chiptechnologies

3.1 IGBT-Chips

3.2 CAL-Diode-Chips

4. Advantages

5. Market Information

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SEMITRANS positioning in product range

SEMITRANS

SEMiX®

SEMISTACK®

SEMIPACK®

MiniSKiiP®

SEMIPONT®

SEMITRANS®

SKiiP®

SEMITOP®

SKiM®

Discretes

[V]

[A] 1 5 50 60 100 200 400 900 1200 5000

600-3300

1200-1700

600-1700

600-1700

600-1700

50-2200

600-1200

100-1800

50-3600

100-1200

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SEMITRANS 2(width 34 mm)

GB GAL GAR

Product Range: Standard housing sizes

SEMITRANS

Customer most wanted housing sizesStandard case types (world wide standard)These housing sizes are offered by several competitors

SEMITRANS 3(width 62 mm)

GB GAL GAR GM

SEMITRANS 4(width 62 mm)

GA

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SEMITRANS 2 NI (low inductive design) SEMITRANS 9 (high isolation voltage)

SEMITRANS 6 /7(solder and faston terminals) SEMITRANS 5 (Multitrans / Shuntmodule)

SEMITRANS

Non standard dimensions

Customer specific solutions andcatalogue types

Product Range - Non standard housing sizes

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Product Range (standard housing sizes)

SEMITRANS

ICnom [A]ICnom [A]

SEMITRANS 3

SEMITRANS 2

GB GAL GAR

SEMITRANS 4

GM

600 V 1200 V 1700 V

600

400300200

1501007550

450400300200

1501007550

400300200

1501007550

600 V 1200 V 1700 V

900

600

400300200

600

400

GA

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SEMIKRON SEMITRANS

Current rating in A

Topology: (GA) Single switch(GAL) Chopper(GAR) Chopper(GB) Half bridge(GD) Sixpack(GM) Common emmitter

Maximum Reverse voltage[V] (Value/100)

IGBT-Technology (3) Standard IGBT2(5) Ultrafast IGBT2(6) IGBT3(T4) Fast IGBT4(E4) IGBT4(V) V-IGBT

Optional: (D) Inverse diode in CAL3-Technology(H…) Special type (special selection / laser marking etc…)

Type Designation System

SEMITRANS

SKM 400 GB 12 6 D

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SEMITRANS

SKM 400 GB 12 6 D

Current rating in A

Definition for NPT, SPT & IGBT3 (e.g. 123, 125, 126, 173, 063) Current rating ≈ ICmax (calculated at Tcase = 25°C)

New current rating for IGBT4, V-IGBT and 600 V IGBT3 (e.g. 066, 12T4, 12E4, 12V) Current rating: ICnom as given by chip supplier

ICnom is given in the data sheet, where VCEsat , Eon & Eoff are specified

Change in Type Designation System

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New Type designation

Change in Type Designation System

SEMITRANS

Old Type designation

SKM200GB12T4 => ICnom=200A SKM300GB126D => ICnom=200A

IC=300A @Tcase=25°C

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SEMITRANS

Agenda

1. Overview

2. Basics

3. Chiptechnologies

3.1 IGBT-Chips

3.2 CAL-Diode-Chips

4. Advantages

5. Market Information

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In general: Parallel to an IGBT-chip a diode chip has to be placed (free wheeling diode)

Basics

SEMITRANS

Diode-Chip:IGBT-Chip:

SEMITRANS-Modules are manufactured by: SEMIKRON Slovakia (types with high production quantities) SEMIKRON Italy (special types and configurations)

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SEMITRANS

Main Terminals

Auxiliary Terminals

Copper Base Plate

IGBT/Diode-Chip

Bond Wires

DCB (Al2O3)

Module Structure

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SEMITRANS

Agenda

1. Overview

2. Basics

3. Chiptechnologies

3.1 IGBT-Chips

3.2 CAL-Diode-Chips

4. Advantages

5. Market Information

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Demands for IGBT Modules

DC-link voltage

Switching frequency

Load conditions

Space

Cooling possibilities

…

Due to the physical limits one single chip technology can not fulfil all demands (!)

SEMITRANS5/12/2015Slide - 15 -

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Supplier Chip Type & Voltage Juntion Temp. Chip Type600 V Super fast (063) Tjmax = 150 °C

IGBT

600 V Trench (066) Tjmax = 175 °C

1200 V Ultra fast (125) lowest Eswitch Tjmax = 150 °C

1200 V NPT (123) (discontinued) Tjmax = 150 °C

1200 V Trench 3 (126) low VCE(sat) Tjmax = 150 °C

1200 V Trench 4 (12T4) Tjmax = 175 °C

1200 V Trench 4 (12E4) Tjmax = 175 °C

1700 V NPT (173) Tjmax = 150 °C

1700 V Trench (176) low VCE(sat) Tjmax = 150 °C

1700 V Trench shr (17E4) (new type series) Tjmax = 175 °C

1200V V-IGBT (12V) Tjmax=175°C

1200 V SPT (128) (discontinued) Tjmax = 150 °C

600 V CAL 3 / HD Tjmax = 150/175 °C

Diode1200 V CAL 3 / 4 (HD) Tjmax = 150/175 °C

1700 V CAL 3 / 4 (HD) Tjmax = 150/175 °C

Chip Technologies

SEMITRANS

Types in grey letters are not for new design

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128 SPT

126 Trench

125 Ultrafast

12T4IGBT 4

123 NPT

fsw [kHz] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 2420 21 22 23

12E4

12V V-IGBT

Recommended 1200V IGBT switching frequencies

SEMITRANS

Types in grey letters are not for new design

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Parameter Standard123

Ultrafast125

IGBT3126

SPT128

IGBT412T4

IGBT412E4

V-IGBT12V Unit

VCEsat*@25 °C 2.5 3.3 1.7 1.9 1.8 1.8 1.75 V

Eon + Eoff **per 100 A 26 12 26 22 20 22 18 mJ

Chip size per 100 A 156 156 109 158 96 96 94 mm²

Pos. temp. coeff. of VCEsat YES -

QG*** per 100 A 0.85 1.0 0.9 1.2 0.57 0.57 1.15 µC

Tjmax 150 175 °C

Main Parameters for 1200V IGBT series

SEMITRANS

* Chip level** Measured in SEMITRANS case at 125°C (150°C)***Measured @ VGE from -8V to 15V

Parts in grey are not for new design

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SEMITRANS

Innovation on IGBT Technologies

Increase of current density from 85 A/cm² to 130 A/cm²

IGBT Chip size development

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SEMITRANS

NPT (123) “Like a Dray-Horse from a brewery”

Slow

Robust

No “driver`s license” necessary:Find the way on its own

VCEsat: 2,5V

Eon+off:~26mJ/100A @600V, 125°C

100% power per case

Trench4 (12T4/12E4)“Like a Racehorse”

Fast Sensitive For jockeys only:

Doesn’t forgive errors in care and controlVCEsat: 1,8V; Eon+off:~ 21mJ/100A @600V, 125°C

135% power per case

Comparison 2nd and 4th IGBT generation

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SEMITRANS

Increase of junction temperature toTjmax = 175 °C More current due to higher

junction temperature or

Improved reliability by using the higher temperature difference

Increased Tjmax for IGBT4 (Trench 4)

Tj max = 150 °C Tj max = 175 °C

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SEMITRANS

For all IGBT modules SEMIKRON offers the CAL Diode as free wheeling diode

Developed by SEMIKRON Fast

Soft Recovery

CAL diode technologies

CAL 3 (for IGBT2)

CAL 3HD (for IGBT3)

CAL 4F (for IGBT4)

063 066

123,124,125, 126 12T4, 12E4

128 12V

173,174 176 17E4

IGBT 4 / V-IGBT: Tjmax = 175 °CCAL 4F: Tjmax = 175 °C

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SEMITRANS

Agenda

1. Overview

2. Basics

3. Chiptechnologies

3.1 IGBT-Chips

3.2 CAL-Diode-Chips

4. Advantages

5. Market Information

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Competitor: Not Low Inductance Internal Design

5/12/2015 SEMITRANSSlide - 24 -

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The comparison of stray inductances showInside the module, SEMIKRON reduced the inductances significantly due to Centre point connection, similar current path for all parallel chips

Parallel DC terminals

SEMIKRON Low Inductance Internal Design

SEMITRANS

LCE,stray ≤ 20 nH

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SEMITRANS

SEMITRANS in comparison

A high di/dt makes a low inductance design of the IGBT module itself necessary

Comparison of Stray Inductances

SEMITRANS 3 (“62 mm”)

SEMITRANS 4 (“62 mm”)

SEMIKRON Max. 20 nH, typ. 15nH

Competition Typ. 20 - 25 nH

SEMIKRON Max. 20 nH, typ. 15nH

Competition Typ. 20 - 25 nH

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High isolation voltage as standard for new technologies

Higher Isolation Voltage

SEMITRANS

Visol [kV]

3.0 kVAC, 1 sec

Old type technologies:063, 123, 173

0 3,0 4,8

4.8 kVAC, 1 sec

+60%

Present and new technologies:066, 125, 126, 12T4, 12E4, 12V,176, 17E4

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SEMITRANS

SEMITRANS Modules additionally are marked with Data Matrix Code

Data Matrix Code Contents Type description

Part number

Production tracking number

Measurement number and line identifier

Continuous number

Data code

Data Matrix Code

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SEMITRANS

All SEMITRANS Modules are in agreement with RoHS(Directive 2002/95/EG: Restriction of the use of certain Hazardous Substances in electrical and electronic equipment)

Since June 2006 we produce all Semitrans Modules with lead free solders

The change to RoHS compatibility is visible with a "R" marking on the product case after the date code

All SEMIKRON products do not contain Mercury, Cadmium, Hexavalent Chromium, PBB or PBDE according to RoHS

Environment

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SEMITRANS

Different IGBT-technologies for different applications

Soft switching freewheeling diodes (CAL-Diode)

Low inductance package design

High isolation voltage

Customer specific solutions

With Data Matrix Code

All Modules in agreement with RoHS

Advantages of SEMITRANS (Summary)

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SEMITRANS

Broad range of IGBT-technologies in one product family optimal adaption to different applications

multiple IGBT sources (Infineon, Fuji)

Soft switching freewheeling diodes ( SEMIKRON CAL-Diode) safe operation, high current performance

optimized for different IGBT generations => high power output, low price/amp

Low inductance package design safe operation, high DC-link voltages possible => high inverter power output

High isolation voltage safe operation

Customer specific solutions

USP‘s

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Thank you foryour attention!

SEMITRANS5/12/2015Slide - 36 -