sentaurus tcad training for cmos application (synopsys_2009) _ ocr

Sentaurus TCAD Training for CMOS Application

synopsys~ Predictable Success

Section 1. Course Outline

• Sentaurus TeAD Overview

• Sentaurus Workbench

• Sentaurus Process 10 & 20

• Tecplot SV

• Sentaurus Structure Editor - Building Meshes

• Sentaurus Device I-V simulation

• Inspect

synopsys' Predictable Success

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1

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Section 2. Course Outline

• 20/30 Sentaurus Structure Editor

• Ligament introduction

• C-V Device Simulation

• Breakdown Device Simulation

• 90nm nMOSFET Exercise

• pMOSFET Device Exercise

• SolvNet Resources

• SolvNet Introduction

• 2D Strained Silicon 45nm CMOS Reference Flow Demo

• 3D nMOSFET Demo


) I


2

reAD: What's it used for?

• TCAD is used to develop and semiconductor technologies

• Designers focus on the chip

• TCAD users focus on the transistor!


Putting Simulation to Work

You can learn to fly a jet by actually flying one at great expense and risk

Or you can use a flight simulator at a fraction of the price and a lot less risk I!!


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3

Simulating Semiconductor Manufacturing

• With TeAD, engineers simulate the process fabrication flow and resulting electrical behavior

RF

00: substrate

TCAD Application Areas

Opto

'LED, LASER 'Image sensor ·Photodetector ·Solar cell

'High-speed device ·Compound semiconductor

Emitter

Process Gate oxide 3nm

Poly gate deposition Gate formation

100 nm gate length Halo implant

BF2, 40 keY, 8e12, 35 deg, quad

SID extension As, 5 keY, 5e14, 0 deg

SID extension anneal 1050 degC, 3 s

De,,« Vth, lon, loft ....... .



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4

and many types of customers

Research/University • Research Labs, Professors,

Students • Process, Device, Interconnect

Military/Government

• Research Labs, Government Agencies

• Device, Process, Interconnect, C&E

10M ~.1'CA[);'R~6:;Te~h:Oev" 'c,', .~;

,./,fl~~{:t~~ri~~,'c<~~;X.:l; ,i

Foundry • TCAD, R&D,Tech; Dev.,

Production • Process; Device,

Interconnect, TFM, C&E

Fabless

• Foundry Interface; Device Modeling, Library Development

• Interconnect, Device, Process c

synopsys' Predktable Success

Sentaurus Product Family

• Flexible Framework Environment • Advanced Visualization

• 20/30 Process Simulation • Calibration Library • Structure Editor Interface

• 20/30 Oevice Simulation • Structure Editor and Mesher • Application Specific Options

• Process Compact Models • Based on Calibrated Flow • Links Process Variation and

Device Performance

Integrated TCAD Flow from Development to Manufacturing


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Benefits of Using TCAD



6

The MOSFET is Getting a Face Lift! Gate insulator ·Si02/HiK • Leakage • Trapping

interface

Gate • Work function Channel • Depletion • Mobility

Raised SID • Material • Activation • Diffusion

SID extension • Activation • Junction (USJ)

STI • Stress

Device Scaling = More Simulation Needed


Strained Silicon

Stress Distribution in a PMOS with SiGe

~ 300 !l C 250 <JJ E 2l 200 c <U

-§ 150 <JJ

g 100 :0 o

::;; 50

• Experiment Set 1 • Experiment Set 2

"" ' 1st order piezo model " .--~ 2nd order piezo model "'. - --4 6-band-kp Monte Carlo ,

OL...L~~-,---"~-'--'--'--'--'-~L-L~L-L."""<t

• Essential for 65nm development and beyond

• Provides key insight into physical effects

-2000 -1500 -1000 -500 Stress (MPa)

Behavior of various models for high stress, Experimental data from L Shifren ot aI, Appl, Phys, Lett., vol, 85, pp, 6188-6190, 2004,

o


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Atomistic Effects

Discrete Dopant Distributions

Electron Density in Sen taurus Device

10'

0.2 0.4 0.6 0.8 Gate Voltage (V)

Statisticallds-Vgs

• Physical basis for simulating emerging effects: • Random Doping Fluctuation (RDF)

• Line Edge Roughness (LER)

SON OS Device Structure

Silicon Nitride - __

.7 11m

2D Mesh Generation • 2301 vertices



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Image Sensor Pixel

Microlens

N

-2 -I o y

• 3D to 2D cut to see the buried photodiode synopsys' Predictable Success

Omega FinFET

Sentaurus Device simulation using Quantum Transport Model

Omega FinFET with electron current streamlines

Run-time statistics: 13000 nodes Single-carrier quantum transport 95 CPU minutes < 1 GB RAM

Electron concentration at center of the channel

Red: > 1019 cm-3

Blue: < 1018 cm-3


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Framework - SWB

• Provides a GUI-based simulation environment

• Organizes simulation projects, runs and results

• Allows large Design of Experiment (DOE) and statistical analysis

• Manages job scheduling & network computing

• Enables interactive visualization and analysis of simulation results

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10

I

reAD Product Architecture

Sentaurus Device Editor Sentarus Workbench

/ Mesh

Process Simulation

•

•

Models wafer fabrication steps • Implantation, diffusion, oxidation &

lithography models are calibrated and highly predictive

• Etching and deposition are typically modeled geometrically

Starts from flow description and layout

Sentaurus Device

E ~ 0.0004

~ 5 ~ 00002

~

/ Drain Voltage {Vi

.......... PCM Studio

t. l .. _. L L t.t synopsys' Predictable Success

TCAD process flow editor

oo.sut6-trille

90nm nFET


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I Structure Editor

3D Emulation

• From layout and geometrical photo, etch, & deposition to

generate 3D structure.

20 and 3D iterative editor

Device Simulation

• Models the electrical, optical, mechanical & magnetic behavior of r'~ semiconductor devices • Simulation is typically performed

on structures created by process simulation

• Modes of simulation • Static, time-dependent, large and

small signal frequency dependent and noise modeling

Highly accurate CAD models can be extracted from device simulation results

• Intuitive user interface

• Interactive scripting

record GUI actions

type/paste script command

easy to debug


Simulated current density and flow lines in 100nm device

"./

Simulated electrical characteristics


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PCM Studio

PCM acts as a link between the Yield Management System (YMS) and TCAD

PCM from TCAD In-process Metrology and Device Characteristics from Manufacturing

• Graphical & Statistical analysis

• Visualization of experimental data

• Visualization of process-device relations

• Algorithmic analysis Reverse analysis

• Feed-forward analysis • Process Window analysis

.-------

.... i :7·

i)f~···~)f.,+¥)l~ . j 1 j . .I: .'. i J r .I"


rCAD Consulting and Engineering

• Dedicated team of highly proficient engineers with long professional experience

• Clo~e collaboration with the Synopsys software

• • 'Ohlf:/,Loo,r ~ 1E21 ~ :-.... • I$"Y:FU.>OP'

1 :,,:!.. ~ .:;''/.':.~ .. ~ lE20 ~ _$'-,,",5.1041

i lE19' "S:: g ~~..... • • .... engmeers il lE18 • • '_ •• - • ~

Close collaboration with customers in consulting and ~ lE17l....",~!!fJl~i1j~ engineering projects 0 10 O:;lh(n:, 40

• Service project examples • Calibration • Process analysis and optimization • Difficult simulation types, such as 3D, full-chip,

SEU/SER, ESD Customer specific technology templates

• Customer specific training and know-how transfer • Model development and integration • Software integration: TCAD FabLink • Dedicated engineering projects


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Synopsys reAD

synopsys" Predictable Success


14

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WMj,a;h' (a GUI tool to assemble process flow and layout data, n then translate to the input file of SProcess)

UWMi**j==========+------. n

~im[$l!llmij$j <===:> Emittitl n 1L---__ --1


Sentaurus Workbench

15

Node Information

~jl ':;;l'lIr~~Ju}51

P<¥,

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f-='----+----'-"""--+~-'-·15"__ --;;;~-~.--~_z~--

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P~~tr HaIoEr>e/W

V"'"' ~s Slelus:: I-Oae: m42:23Ocl2G2007 HOlt !v.,().HcadJ3

"'. 211 NodoJ;lochd;' fV

r-€'ofreetedVer~t·-·

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l>¢ l.3S5e-Ol ~ Yow<- S.5~7t!.{)4

i..!~., .. _~ J:!~.~-~L ....

j l¢f: 1{

1><; ! Ygox: 1{

i To" It _,~_,,,_.,~ __ .,, __ • __ ._.<

J H-*'DoseAlel) abEneI!B,,15

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Online Manuals and Training Material

S ... _ ... F ...... ,".~"".,.... .... """¥"'I~.nt' •• " .. " .. :"'''..".. ..... ~T-'' .. ""'1 ...... )*""''''' ........ ~~ .• tm .. ~~.,MU"' .... I" .. "H ........ _"

U;;"''''<'III> ~,"'.""IMo~~.~lI TC'Of'~"'u "'~bl\<l ThO l.-.",.n ... ~ ~="""~11O'''''''_r<~~_!C'O?l'", .. ~~, ......... , .. ",a synopsys'

Predictable Success

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Basic Operation

• Attach 1 Detach folders

• Copy 1 Delete projects

• Clean up 1 Pre-process 1 Select nodes / Run projects 1 Abort projects

• View Output Results

• Export (tar) 1 Import (tar) projects



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Outline

• Sentaurus TCAO coordinate systems

• Script file setup sequence

• 10 example

• 20 example

• Implement external variable on Sentaurus Workbench


Sentaurus TCAD Coordinate Systems (default setting)

·0.2

T'"" I 0: E 0

02-.......... (f)

~ ~ 02

0.4

SProcess

02 0.4

Y-axis (urn)

[1,-1,0] ..... Silicon miller indices

·0.2

T'"" I

~ E 0

o 2-.......... (f)

I .~ 0.2

t >-0.4

Tecplot, SDE, SDevice

o X-axis (urn)

[ 1,-1,0] .....

0.5


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Coordinates in 3D

Simulation CCJxdinates Vicualization Coordina.tes

3D

J!"'\ ~ '\ z y

x


Wafer Coordinate & Slice Angle z,

x" Figure 12 Wafer coordinate system

Y,

I ___ ---r~./_ ~"",.;)n*

~~0~\. Y'~ Z, ". > .. :( , .,/

/

x~

z, Figurt! 14 Default simulilboll coordinate lS}'slem (slice .• lflgla = -00) Figure 13 Slmul41ion coordiOuto system {slk:9.angle '" 45)


19

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Script File Setup Sequence

• Setup initial mesh

• Define initial simulation domain

• Initialize simulation & define substrate condition

• Setup process flow

• Oxidation / Deposition / Etching / Implantation / Annealing

• Rebuild mesh at appropriate steps

• Define electrodes

• Save full structure

• Extract parameters


1D Example

• Copy project "1 D_SProcess" from training_library

• Refer to the command file of example "1 D _ SProcess"

• Check 1 D doping profile by INSPECT

• Output file introduction


20

I , I

I

Reference: SProcess, p34 - Oxide Thickness

• Meauring oxide thickness:

Select z=Boron

layers

{ Top Bottom

{-6.43e-03 4.11 e-03

{ 4.11 e-03 2.00e+OO

Integral

1.54e+09

1.98e+11

Integral Boron Concentration

Material}

Oxide}

Silicon}

• final oxide thickness is 4.11 nm + 6.43 nm = 10.54 nm

Reference: SProcess, p734 I p672 I p741 I p775 I p98 - select I layers I SetPlxList I WritePlx I Datasets • Select

• Selects the plot variable for the postprocessing routines

• Layers • Prints material interfaces and integrated data field values

• SetPlxList

• Sets a list of solution and term names to be passed to WritePlx command

• WritePlx

• Writes a 10 pix file.


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2D Example

• Copy project "20_SProcess" from training_library

• Refer to the command file of "20 SProcess"


2D Example Process Flow


22

I I I

2D Example Mesh Setting

Extract Parameters Ygox (X coordinate of oxide/silicon interface) Ypol (X coordinate of POLY/oxide interface) Tox (gate oxide thickness) = Ygox-Ypol Lgeff (effective channel length) = 2*Xgd Xj (Source/Drain junction depth)

0.1 0.2

Ocp,["t"}COil:.e!lll<lI,yNNelh!Ntf; teln-· -J) ~ .) 4E~20

, ')'OE+ 17

. 27E .. 14

--64E.ll

Ii ::~:::;

0.4

c=J 0.6


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Implement External Variables on SWB • copy 2D _ SProcess > clean up > add parameters> modify command

file> clear up & renumber the experiment tree

I Add external parameters on workbench I


Implement External Variables on SWB

• copy 2D _ SProcess > clean up > add parameters> modify command file> clear up & renumber the experiment tree

Link external variables to internal variables

#--- set variable --------------------- #--- set variable ---------------------setlgate 0.18 set Igate @Igate@ set ymax [expr $/gateI2+0.4] set ymax @<lgate/2+0.4>@ set HaloDose 1e13 set HaloDose @HaloDose@ set HaloEnergy 15 set HaloEnergy @HaloEnergy@


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2D Example

• Copy project "20_SProcess" from training_library

• Refer to the command file of "20 SProcess"

• Run & check extracted variables

• User exercise: Add the SWB variables & change code accordingly

Reference: SProcess, p453 ; SWB, p160 I p95

• Advanced Calibration

• calibrated to deep-submicron CMOS & SOl technology


• power devices or SiGe devices, may require simpler or additional diffusion models, which are not yet included in the Advanced Calibration

• # - command

• #set <varname> <value> : Sets the value of <varname>

• Extracted variables

• puts "DOE: <varname> <value>"


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Tecplot SV Overview

• Tecplot SV is software for scientific visualization.

• Extended by Synopsys to accommodate the special requirements.

4/2/2009


synopsys' PredldableSuccess

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Specify Equations • Use the Specify Equations dialog to alter data in existing zones_

Data> Alter> Specify Equations __ .

• The dialog allows you to change the values of entire variables or specific data points_

• You can also use the dialog to create new variables_


Generating 1 D Cuts • One-dimensional cuts can be made along either the x or

y coordinate axes.

Slicer >Orthogonal Cut

Normal Direction: .... X

vV ",Z

.J Cut at mouse position

Number of Cuts::

First Cut At

Last Cut At

• Merga Zones in Cut

...., Cut Zone By Zone

~~: <, ~ ~. ,

x {umJ YlumJ

synopsys' PredictableSucces$

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Exporting 1 D Cuts to Inspect

• Select the frame that includes the cuts to be exported. File> Export> Inspect Graph ...

:t ·:eees "fiE . , ...

;.\-.. -c-.~ . ..::-~ :"''I;.~;~ ":::G:: ,...~ ... ~_ • ~ 'k"~",

---


Ex 1. Plot 1 D Band Structure (1/7)

Project: /PostBasiclquestionltecp/otitecp/oC 1 dband

• Open the IdVg tool's tdr file.

"."<.-;

Iii':,:::

• Select Data> Alter> Specify Equations ...


28

Ex 1. Plot 1 D Band Structure (2/7) Set as follows (The unit is necessary.):

{ Ef } = -1'~{eQuasiFermiPotentia7 [V]}

oafa Set In(o._

Remove -<:>'$

1. Input equations load EquaUons ..

) Save EqualJons ..

I."

Default EquaUon Modifiers

Close

Index Ranges Start End SkJp

~Indexrn-~rnJ-lnd9Xrn-~WK-Indexrn-~W

New Var Oala Type

New Val location

Help

1 Abs(Exlrapolalion_eOe/ ..."l

Abs(Extrapolat/on_hOel ~ AcceptorConceniration ConducUonBandEnergy OonorConcenlratlon [cnt.~, Dop!ngConcentraUon [c

ElectroslallcPotentlai [V l

"------' -


Ex 1. Plot 1 D Band Structure (3/7) Select Ef. Abs{Exirapolatlon_eOel ~

Abs(ExtrapolaUon_hDs/ J AcceplorConcentration ConductionBandEnergy DonorConcentratlon [cn DoplngConcenlration (c

• Slicer >Orthogonal Cut, select X, and set First Cut At 0 in the form.

EleclrostatlcPotential IV ; ,J------.J '

Normal DJrecllon: .. X v y

vZ

...J Col at mouse posllion

Numberore"!s: ~~ FlrslCutAI: ~~ Last Cut At: '0, .).3.i:5 4.

.. Merge Zones In Cut

v Cut Zone By Zone


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Ex 1. Plot 1 D Band Structure (4/7)

• Keep pressing control key, and select ConductionBandEnergy and ValenceBandEnergy.

QuaslFermlPolentiai IVI SpaceChar..9.e lcnr-l1 i1

Vertexlndex eCurrentoenslty [A·em' eDensity [Cm"-31 eMoblllly (crrrZ~V"-l'S

Ex 1. Plot 1 D Band Structure (5/7) • 10 band structure.


'1.

Cut at X=Oum

PolySili~?n.r· Silicon


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Ex 1. Plot 10 Band Structure (6/7) • Select the slice frame, and press

File>Export>lnspect graph ...

:?~_~ __ ..:,.~' '·'i,,~;~~ .. :::;.l. ~:.~ "'"."' .... "-. 'l~y~'. "_ . ____ . __ . ___ .. _________ ._. -;'~"

~;U"!l '.;"U'l -_ .. ~-_ ..... _ ...... -.-----.. ---~--~-.. -----~-.. ------~---.--------.-- ...... - .. -

Ex 1. Plot 10 Band Structure (7/7) • Y _[urn] : To X-Axis

ConductionBandEnergy: } ValenceBandEnergy: To Left Y-Axis Ef:

------;

.-_.--"--- ". __ ... _,

><--. -;.::- -----;----~-~

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31

Manual Introduction (refer to Tecplot-SV manual)

• Getting started

• Starting Tecplot

• Main T ecplot window

• Loading files

• Synopsys sidebar

• 20/30 Mode

• XY Mode

• Native Tecplot

• Generating cuts

User Exercise

• Load Sprocess_2D example

• Load 3D example

• Perform the x-cut

synopsy~r Predictable Success

For doing 3D cut, go to slicer => orthogonal cut (Y-normal direction), select 3 cuts with default end points


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Outline

• Mesh strategy of MOSFET device simulation

• GUI operation on interactive mode

• Script a command file for batch mode

[Screen Res should be set to 1 024x870 to accommodate External Profile Placement Dialog Box]


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Flow of Input and Output in SDE

Intput: Device Structure from SProcess

Intput: Mesh Strategy

}

Output: Runtime messages

MOSFET Mesh Setup Strategy (for SDevice Simulation)

• Load boundary from previous SProcess output

• Define initial mesh for Silicon and PolySilicon materials

• Refine Source/Drain junction mesh

• Refine LDD junction mesh

• Refine silicon surface region between channel to

o

SID contact 0.5

• Define gate oxide mesh

• Refine channel mesh

• Refine PolySilicon mesh

• Load doping profile from previous SProcess output

• Define PolyGate (PolySilicon) doping

Output: structure, doping, mesh


o 0.5


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MOSFET Mesh Setup Result (for SDevice Simulation)

Batch Mode

E 2->-

• Refer to command file "sde_dvs.cmd" of example 0.18um nMOS

• Check output files

4/2/2009

synopsys' PredictableSuccess

35

Interactive Mode • Start Structure Editor => type "sde" • Journal on => record the command line of each step • Import boundary file from n4_bnd.tdr • Load sub mesh (geometry and doping data) from n4_fps.tdr • turn off "auto region name", turn on "exact coordinates" • Step by step setup mesh by GUI

Silicon => (0.1, 0.1) / (0.05, 0.1) Poly => (0.02, 0.05) / (0.01, 0.025) SO' => (0.09, 0.0) / (0.49, 0.3) => (0.1, 0.03) / (0.006, 0.006) LOO => (0.05, 0.0) / (0.09, 0.05) => (0.006, 0.006) / (0.005, 0.005)

• CtoC => (0.09, -0.002) / (0.49, 0.006) => (99, 0.002) / (66, 0.001) Gox => (0.0, -0.002681) / (0.09, 0.00065) => (99, 4e-4) / (66, 4e-4) Channel => (0.0, 0.00065) / (0.09, 0.075) => (0.02, 0.05) / (0.01, 2e-4) / (-1.45, 1.45)

• Gate => (0.0, -0.18) / (0.09, -0.002681) => (99, 0.04) / (66, 4e-4) / (0.0, -1.75)

• Define PolyGate doping type and concentration (Arsenic 6e19)

• Save • Build mesh • Journal off • Check .tdr .jrl

Reference: MeshGen, p72; SDataEx, p11-15

• snmesh <options> project_name


• SMesh automatically adds .bnd and .cmd to the base name project_name to obtain input file filenames. SMesh creates the output file project_name_msh.tdr that contains mesh geometry information and doping information.

• In the case of TOR files as input file, special naming rules apply.

• tdx -mtt -x -ren drain=source n@node@_haICmsh n@node@_msh

• -mtt: Mirrors TOR geometry and saves the result to another TOR file

• -x: Mirror at xmin

• -ren: Rename a region or regions


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The Final Mesh for SDevice

o

0.2

E 2->- 004

0.6

0.8

User Exercise

o 0.5 x [urn]

DQfilngCl)ncer.ltallOl1lC:!TI~·31

• 34E.20 ~"., 3 OE ... 17

2.7E+14

·e.ltE.ll

.-1.2Ed5

-14E't-18


• Import command file & go through batch mode

• Do the refinement manually as stated in the interactive mode.

• Build the mesh & check result


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The Final Mesh for SDevice

0

0.2

E 2-

0.4 >-

0.6

0.8

o 0.5 X [um)

User Exercise

DopmgConcenlra!lcm !cm-'-31 III 34E.20 ',,.-. ;"JOE+- 17

",: 2.7E+ t4

c: -S 4E+ 11

•• 1.2E.1S

-14E ... 18


• Import command file & go through batch mode

• Do the refinement manually as stated in the interactive mode.

• Build the mesh & check result

synopsys' PredictableSucccss

4/2/2009

37

4/2/2009


Outline

• Flow of input and output in SDevice

• Command file introduction

• Parameter file introduction

• O.18um nMOS Id_Vg example


38

Flow of Input and Output in SDevice

Input

Device Structure

Command File

File

Input

Models, Parameter, SWeeps

Output:

Runtime messages

"define the input and output files of the simulation"

Electrode {

Output:

IVs. Field distributions

"define electrical (or thermal) contacts, initial bias condition, special


}

boundary condition" }

Physics {

"declare physical models" }

Plot {

"specify the solution variables that are to be saved in the Plot file" }

Math {

"options of numeric solver"

Solve {

" set bias sweeps sequence and solve transport models"


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Parameter File • Refer to SDevice manual 2007.12 P .56 • Check default parameter file by materials • When parameter file is empty, use default parameters

Reference: SDevice, p56

• The parameter file contains user-defined values for model parameters (coefficients).

• The parameters in this file replace the values contained in a default parameter file models. par.

• Model coefficients can be specified separately for each region or material in the device structure

synopsys' PredictableSucce5s

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E 2->-

0.2

• Refer to 0.18um_nMOS example

Vg=O-1.5v

80-006 ,----------,-8&-005

/ .02 o 02 0.6

x [urn] Vg{vonj

Vb=Ov

User Exercise

• Use 2D_Sprocess example, do:

• Add Structure Editor, add "PolyDop" parameter, import command file

• Add Sdevice, add "Vdd", "Vds", import command file, and specify import parameter

6&-006

20-006

synopsys· Predictable Success

• Run (Result checking will be demo'ed in the next section)


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41


Outline

• GUI interactive mode • Load curve file, plot curves

• Edit Plot area, Axes

• Create new curve

• Formula library - refer to manual 2007.12 P .25,48

• Macros - refer to manual 2007.12 P .26,50

• Save, Export

• Script file batch mode • Record each operation step on interactive mode to generate

a script file.

• Script a command file - refer to example 0.18um nMOS

• Extract standard parameters of the extraction library


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42

Reference (Inspect, p48 I p50) Function Table:

MACRO Example:

The macro ADO is defined as:

<c 1>+ <c 2>

Relum:. II"" tn~~ .... b~~t>o'lk..-..:.sul~ 0Jr. .... Vallk':-- mtl'J ~

~.,..~k)J"Ul.1.tl('ro;:qu:al11)1.

Retulm tho! Ill>:" 1~. ~ retumL-J an~ {odi:ml ~ ~" ..... -n in tl:v!r.m.,..:--lt ... : If.\:'t. Z

Rottum,;. tn.!::lI.'I:' t:.ll~,~t. Ttl ... rewm..."Il.:1llgk·Ir.:Jd1a:tl is 21 ...... 0 In tho:-'.I1lt<!'-1I: '1 l'}~_ 1.

R ... tun!$ the tuv.."f~ hyf'<:rt'C"i,: 1ml£",cL CtIf\.\· \,:du...", lnu.-.l tlc~n-a_l :.nt11(<,::c-lu.l~_1 aud I •.

R(.u,""tTf' .. ":k.·h"!"'~11 m~'m:illcstinte'2>!rQl'llo.~ tb::lll jt1o~t(.

This macro adds two curves. The macro prototype looks like:

AOO«CURVE>, <CURVE»


User Exercise

• Open Inspect, plot IdNg in log scale, and obtain gm by getting max(diff(curve))

• Create an inspect script by GUI: record, load pit, plot, save, modify code.


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Agenda

Inspect Script Basic

Version A-200B.09 RevO.O

• Basic Operations and Script Commands

~ Load pit File: proUoad

~ Create Curve: cv createDS

~ Set Attributes: gr_setAxisAttr; cv_setCurveAttr

~ Extract Variables: cv_compute; ft_scalar

• Mathematical Formulas and Macros ~ Mathematical Formulas

~ Macros

• Threshold Voltage Extraction

~ Definitions of Threshold Voltage

~ Inspect Script

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synopsys-Predictable Success

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Inspect Script

• Inspect can be controlled by using a simple scrip language. For example, a script can load a project (data file), draw curves, and perform mathematical computations on curves.

• A script can be written manually or created automatically by recording actions performed interactively through the graphical user interface.

• Inspect script can extract variables to SWB family table. Variable Values - .......... __ .... _ .. _ .... . FamUyTree

··i-~-···:llin~~iJ I .

... . ~~!""Ei:.ii .. .. !.p..~~~~~. __ ~ __ --' .----~~----; --.~~g -. --!.- .. ~?.~!~.!!".-..... ,-,-====..,.,..-==--..

-----'r; -'l"'~~~""~ift'--'.---:-; __ --1i-, -_-~;f--;;O~.~~7S- O.~6 O~~3 (~:~~~:~:=:~-=-~~==~·::-==~:~=-.... -l=~~~:=~; 0 075 "'ri~340' ...... - "0.2'-5-- .. . . 0.01 , 1 0.OB5 If 327' -- . . o.2olf . . -.... ·o:oiis-··-'·-·-·-·::.-····-·-·:·---·-=-···--l~·-::::·--~~ 0 100 ...... ·····0·'3,·5·· '0' ;"99" .. . '-'-"a~03z's-""-7-' -··-··='-·---·T·--."-·':::-·-~·~i--····::'-···"·...... oj'io .... 0298 . -. --0 ,'6e'-~'-O:092S--~ . . 0.250' 0257 0.158


Basic Operations and Script Commands


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•

•

Basic Operations and Script Commands

The basic operations and script commands are explained: ~ Load pIt File: proUoad

~ Create Curves: cv_createDS

~ Set Attributes: gr _ setAxisAttr; cv _ setCurveAttr

~ Extract Variables: cv_compute; ft_scalar

A backslash '\' is used to extend a command to multiple

lines if it appears as the last character on the line.

Load pit File - Operation - (1/3)

Is-i?fflj!tiHbfflfttfi,.rlAli vi 4.Mm[~ij Eile; gdit £Urve ~crlpt ~enslons tielp ==:::.· ____ .· ________________ .·.· ____ .·.·.=J;I~r§ :;;;;;;;;;:.;;-.--,.-;r:-1< -":;~.~--==:==~ __ Automatically Update Datasets._ r"---"""i 1 -,-----------

lletete Oatasets 1. CliCk" oad Dataset ... " ................................... __ ...... _ ......... __ ........ ___ .1 .

i l..O<¥, Setup... ! ~ve Setup_.. 1 .-.-.-.. -...... -.-..................... -. ···-···-··1 Restore AIL .

sate AIL i --··-----····-·····-·---·-····1 , £>l>ort rj --............. - .. ----.. _ ...... ·····1

WrtleEPS_ 'I' WritePS_

Print._ ctrf+p t

·~~~~~~~~-.. =--~-~=~==I ~ CtrI+Qj

0.8

0.6

0.4



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ft4$ltMM§ 6 imM~*;£~~~,:L;~ .. :,<,.~~~-:r' >.2!lJ

::~~l>,:remoteJ!caJ:l/SalOShjYJSTl)BfTraJnlnglnmOS-'OIlO1f ~ I ihJ i 1

IiJ n14_des.plt [E nlS_des_pTt f IE n16_des.plt I ~ n17_des.plt f

III n18_des.plt I' ~ nlS_des,ptt ., C, .1,.4- 4';

2. Set "Files of type" 4. Click "Open"



c ........ .,.

;::::~::v. .---

····i··· 5. DC\t~set name

___ ::.::::: __ J ... ___ ~_._.; _2::~.:=:~j

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Load pit File - Command -

• Load pit file

proj_7oad n2 des.p7L n2 des 3. 5.

~ n2_des.plt : the name of the file to load.

~ n2_des : the arbitrary name user can define for this dataset.

Create Curve - Operation - (1/4)

:;<>; ~t.;:;'~

f~'~ g' :i--' -,::.. --c-"-,,-c.-c_ ;"'''-c"..,.'<!'<···

f,:~:::·; -1 ;fCfiCK "Qatasets" -1



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"contact"

"OuterVoltage"

t·;~-.;:.;;j' _4..G.!i.ck 'To X-Axis"


Create Curve - Operation - (3/4) WIT?

5. Selec "contact"

, ,-

"TotaICurrent"

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~i""'-"""'" "'i 8. Curv,e Name

~J ,


Create Curve - Command -

cv_createDS Tota7Current Drain \ \ 8.

{n2 des gate OuterVo7tage} \ \ 1. 2. 4.

{n2 des drain Tota7Currentl y 1. 5. 6. 7.

• TotalCurrent_Drain : a unique name for the new curve.

• {n2_des gate OuterVoltage} : a list of data to use for the x-dataset

• {n2_des drain TotalCurrent} : a list of data to use for the y-dataset

• y : optional parameter specifying the axis to use; the default is y; the options are y or y2.


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Set Attributes

• This section describes the functions that change the attributes of the axes, curves, and legend.


Set the Axis Attributes - Operation: Start -

1 ' 1. Double-click the axis

j+::::::::::::::~::~~~::::::::;:::.:===.~:::==::::::::i:==~:::::i~ M',"y,_ I "='=::':':':::'<~~-::;;;jr;.;;,;;~i.;~;:'~~""~':';;''';''~'''~''''''''~''~-:;;; ~J:

.. ....:.::-:".::...J _=. ___ ; .. ~~:'2~:~.J _~~ __ l


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Set the Axis Attributes - Operation: Editing Title (1/2) CUN8t-·---·

68'-05

Color.

• 3. Change ,j Font..

2a-05

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Set the Axis Attributes - Operation: Editing Title (2/2)

Be-OS

P:attems. -Scale l1IJe -TIcks: 6e-OS

TlUe:~vgM

Color:

49-05

5. Change "Fon 2a-05

----------- LI ___ ="'sa:::ffi,-p_le_te_xt ____ -'

__ I·~·~~-~:~_~_~~I_i~~_~'O _ "


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Set the Axis Attributes - Operation: Editing Scale-

Be-OS

L; ;,

Set the Axis Attributes - Operation: Editing Pattern (1/2)

8a-OS

10. Click "Patterns" tab iN.. t &lliirtir.;;~~~:~':'; "\'!-:.~

X-Ms ·!leIl.V-Ms 1 Right Y-AxIs

6e-OS C~~~~~~ Scale 11tIe' nets ~

4e-OS

2e-OS

.. OJspta!lX-Ax!s

...) Display VarlIcaJ Una AI x-o

11. Clic~ Color" )

0.5

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Set the Axis Attributes -- Operation: Editing Pattern (2/2) --

ae-os

12. Click "Patterns" tab

:c.:~~L~~ Y-AXI$ R~nl Y-AxI& .

tie-OS : PallBms :Scale Title ,Tlcb '.~ ... -.--:

...,; Ol$play Vefl!calline At X"O .-....................... _ ..... .

~~~~~~=~==j~~~~=~=} 4e-OS

COlOr: II


Set the Axis Attributes - Command -

gr_setAxisAttr 2{ {Vg [V77- {aria7 15]- a 8 b7ack 1 \ \ 1. 3. 5. 8. 11. 13.

{aria7 is} a 5 a b7ack

• X: a keyword (X, Y, or Y2) specifying an axis.

• Vg M : the axis title .

• {arial 15} : the font size of the axis title.

• 0 8 : minimal and maximal values of the axis.

• black: the color of the axis.

• 1 : the width of the axis line.


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Set the Axis Attributes - Operation· Editing Ticks (1/2)

Sa-OS Subdivislan'

Type

4(>-05

Ze-OS

16.

05 17. Clic " K"


Set the Axis Attributes - Operation: Editing Ticks (2/2)

hi! L w:Rl2ix:>:;": 2<l X-AId, : LmlV-AlGs. :Rlgllty-Axis ,

18. Change TiGk b.abehAngle"

Typ. J4;9:-Change

I'

FollL ;


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Set the Axis Attributes -- Operation: Changing Log/Lin --

Ss-os we. £ ill~~Xs:~,:-·~.>' 2SJ X-Axi' :lI.J1'lY-MS i.RlghtV-AAi,:

20. Click "Scale" abn'~~-;;'~;~~Tm.n,,,, Min.: r---

6,-05 r:;'~=~~~:'~~~;::;:I~i~J 21. Cha~

4e-05

-------.. ---.... -.-----

Za-OS


Set the Axis Attributes -- Operation: Editing Font of Title --

iN "_ Mt,<B£gfdIS::2L.,.~- ',i!.! X-AxIS; len V-AxIs: Righi. V-M~

P"'m, is~"F;;:hr022. Click

------." ------- ---.... --_ .. _--_ .. ~ ....... ~ .... .

Ze-as


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Set the Axis Attributes - Command -

gr_setAxisAttr K {Vg [V]} {aria7 1S} 0 8 b7ack 1 \ \

{aria7 1St Q i Q b7ack 16. 18. 19.20. 23.

• X : a keyword (X, Y, or Y2) specifying an axis

• {arial 15} :the font size of the tick label

• 0 : the angle at which the tick labels are drawn

• 5: the number of secondary ticks between the main ticks

• black: the color of the axis title


Set Curve Drawing Attributes - Operation: Start -

1Ii:1$!===:::=I!II ______ nl!i!i!!W~m1ii!l_1ii!l,-Il1E~,'{o0fif1ff%t':$XW:.::;;~0C;','-::--0

~,. ~;;...>--'

c,J;.Sv·-·:;,..· ..


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Set Curve Drawing Attributes ..... Operation: Editing General Part .....

2. Click "General" tab !&.::tJJ iMtUiis{;~:,=~;;:;-~ ~ : '~<!rJJ:' ~&- M." .... ".~ ~li;~~"'f .~ .. ~ ...... :


Set Curve Drawing Attributes ..... Operation: Editing Line Part (1/2)-

4. Click "Line" tab i2! .... t!!:.i!::!¥Zl},,::!,i1 __ Il!!,mmMH®f%~m!lfL;;d:/

Gene~:,:~~:: .. rastsr . Imerpnl~on COIOr. .... a ....... -. ••• _. __ ...... ..

: l1li00l1lil1li:

'-1 ~:=~~~ n w,,,,,j 1'00000 l :1

~" } 5. ChangelW'Color" ............................ ~§

o~s


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Set Curve Drawing Attributes -Operation: Editing Line Part (2/2)-


Set Curve Drawing Attributes - Operation: Editing Marker (1/4) -

8. Click "Marker" tab WMti I.!f. ·~uu_u. M@f@EJgxl!l~;,:¥;;Z:·::.< 0 ~_ 29;

~oor.ll LJneL~::::EtnwrpOIatlOf1 ~l

[~:::::=&£:::::::::::!:1 9. chaJbe "Shape" ;Sll8. :s:: : 1~ ................... ," ... 10. Change "~,ze" 0uU~ CMorc II U OV1llneWIOlIl:~ 1~! FII!Q)lot: •

-"-~ .. _ .. ~--.... -.. -.-- ---- ,--_. ... . ------_ .. - .. _-_.- ~~j .. -.... jl


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Set Curve Drawing Attributes - Operation: Editing Marker (2/4) --

o's Ouh'fl,lQlI3ge M


Set Curve Drawing Attributes - Operation: Editing Marker (3/4)-

m· t i. . ~::t..::::_~:-

GIIf>II.al.l.tni! Matkin lln!orpolalklfl ~I ,....._._ ....... _._-_ .. _--,

Shap~ i~re

Ij il

12. Chang~ "Outline Width"

__ J! -"'-"-'--'--~"~~~X'~~;~~~~~~J-'----'-"!


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Set Curve Drawing Attributes - Operation : Editing Marker (4/4) -

~i?¥iCitll:i":::l.I:m. __ . ~~"l1lZ:,;;:;:' .·.!91 Ciener~ :lIrIa MarIoor InterpOlaIlOn: !

I _.

j'JqllilN

! OutllnilC010f"_. I o"''",.w'''"r~ 13. Change "Fill Color"

...................... c...... .1

( FlUcoloe,. •• : 'I : DooD.d ,j ... ·····~~:=~~~g=~~:=-·························I

.88888~1Jj~J . .1 \ ............. _ ... __ ... _--_ .. ---

14. Click "OK"

Set Curve Drawing Attributes - Command-


cv_setCurveAttr Tota7Current Drain IdVg b7ack so7id 1 \ \ 3 5 6 7 square 5. b7ack 1 b7ack

9 10 11 12 13

• Tota7Curren'LDrain": the curve name.

IdVg: the curve legend.

b7ack: the color of the curve line.

so 7 i d : the drawing style of the curve line.

3 : the width of the curve line.

square: a keyword for the marker shape.

• 5: the marker size.

b 7 ack : the color of the marker outline.

• 1: the width of the marker outline.

• b 7 ack : the fill-in color of the marker.


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Compute a Scalar Using the Formula

• The formula library allows some basic calculations to be performed on one or more selected curves.

cv_compute "formula" xmin xmax ymin ymax

~ formula: the string with the formula to evaluate.

~ xmin, xmax, ymin, ymax : the range for which the formula is applied.

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Extract Variables • The Inspect command ft_sca 1 ar prints the extracted

value and passes it to Sentaurus Workbench.

• Examples: set maxid [cv_compute "vecmax( <Id»" 0 0.5 0 1.0] fLsca 7 ar i dJT}ax $maxi d

set vt [cv_compute "vecva7x( <Id> , 1e-S)" 0 1.0 0 1.0] ft_sca7ar Vt $vt


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Extraction Library

• The commands provided by this library are used to extract various parameters from I-V curves. The library is loaded with the command:

17oad_7ibrary EXTRACT I

• Refer to Inspect manual for more information.


RF Extraction Library

• The commands provided in this library are used to extract RF parameters from small-signal data. The library is loaded with the command:

I 1oad_1ibrary RFXI

• Refer to Inspect manual for more information.

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Recording Script • A script can be created automatically by recording actions

performed interactively through the graphical user interface.

• To create a script:

}- A Script Name dialog box is displayed, which prompts you to select or create a script file.

Script> Record> Start

}- After selecting the file name, Inspect starts to store every operation until recording is stopped. £'''' "",,~'" ~'"

S . t R d St n;; ..... RunScnpt Ctr/ .. R 'q. ~ ~ II? cnp > ecor > op-~~~ A:~~ ___ ' start. __ [

Add Pau,e ~ j --:-;--.,-___ Add Breat 1

stop ...J

~ synopsys' Predictable Success

Inspect Execution Mode • Inspect has two execution modes: interactive and batch mode. You

can change mode bY:':-:'S'J,~tExe~:':n':::: ."~

Right button>Edit Input>Preferences ...

'"n' .......

,~~

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Mathematical Formulas and


Mathematical Formulas (1/2) • Click the New button below the Curves area in the Inspect main

window .

• The Create Curve dialog box is displayed. The right pane lists available

Cur/e1 t~3me; jWiY-,_,---ro.e~~J!1I~",~~I!!..::·-; 5 .. ::' F"O/lft'.cr""V\.'"l~iP{"'ToWCton:~~in"):> j MO!:p Cllf'.l1I 'To .. t.sfl Y...to'4 v F1fgr.t V-A>d:

<&0'$. :oe1nh, li:$Ilr,-atL1t; .. e.n. 'Stann, ~ c:",II .. coe, ctt'n. f:rt. erlt:,e><p~rbl)-$.~Ot.~<l.jI}.ll.~t\)j:.1og:10.;>IW1.!'Itt. W\1'<,~~Wt, I;ntl.JI}.yl~'!Im',:r.:!~f

... 't~wC"ltIir.., l,:':C';'JI;k. "-&e"'$:;,t"lI~twe:::<ero

,:ur-,tE>n~'l\j}: ll'I1t1e form>JIa~c.t tlJlTOU!ltleti tJ{'''~lll'ld ~ •• ltyol.l1lJll mm; mwo}, CURVftros1: be teplar-I!(t iIo'l!l ~e,r;:U!V!)"!'lam$' ~.'-J :'Ittro t~tobrv~


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Mathematical Formulas (2/2) vecmax (curve)

>- Maximum y-value.

• vecmin (curve)

>- Minimum y-value.

• vecvalx (curve, scalar)

>- x-value at a given y

• vecvaly (curve, scalar)

>- y-value at a given x

vecmax

veczero (curve)

>- x-value at y = o. diff (curve)

____ -+~~ve~c~z~e~r~o----~x

>- Retums the first derivative of the curve.

integr (curve)

>- Retums the integral of the curve.

tangent (curve)

>- Retums the tangent

Macros (1/3)

vecmin


• Macros are predefined commands that can be later recalled. For example, in Inspect, there is a predefined macro, VT, which performs the threshold voltage extraction.

Macros

~u.acortl.;uIn..:.sjrtl.alln.lIIul!,cttla!ll.eM.ant1.e!I. vfI;, Dl'. WIS.~wr.o ......... P.!l.",""",,~Ic>c.I3q1I). ~ ...... <In. .w..'QII.:ar.nm.y(J.~l.(I.r.lnI1<r

"cm»l.. ..... ""'.'et¥~""cvl;lvlm(eot.~I!CZl<O

c ..... '!l3IIeilr!t&IOlllll.la1ll\l<lbt~rro_""ru· ... anll~~·.t\lOUa/lI :,~:-~.ctR\'Em"<lD("p"O'Id"'lhlh~.UlWln'''''''.I\I'''''


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Macros (2/3) • Macro usage: ~:'~~'"YdC!i£;;:z:::;:;s:J~~g-:f~~_~ __ !l'1L*§t)fi@i,;·

C>. ~_ ;;<,,-__ ._ ~,-: !,.;<-,~, =.,

Id "5. Vgs (Lg-O.oss urn. Vds..o.OS V)

""'5 .

2e{)5 •

0.5

Macros (3/3)

3. Select curve¢_'o",_o ---------..... 1aDI.fbrmulleCllrHno'''"'

lCOI.oeoofl,asln._.'II""._.Cl>/tcOji.co<,CO<ll.err. :HIe._.flot>l.noo •• gam ..... JO.lt.Ig ...... a.,loq.IIIqIO.j>O'>< •• ln • .... h •• ~tI._._.yo.y.""'.m.9'

4. Click "OK"


• Macro definition can be edited by

Edit>Define Macros ...

MacroUst

1. S~ect "VT" fRnU1

jRon :IOSS 'iest1 'testtZ

Add fEd"

Delete

Name:

Macro: ivecvaIX(tangent(<:c l>.veczaro(ditr(<C 1» - vecmax(dttf«C';'

~-----2'~croaefinIT~lo~nW------available (Qrm(..!la commands to create macros are:

acos, acosh, asin .... asinh. atan, atanh# cbrt, ceil, cos, cosh. ert erfc. 6Xp. fabs .. lloor. gamma, jO, j1 ... Igarnma. 109 .. log10. pow, sin. sinh. sqrt. tan. tanh, yO, 1'1. dllC lntegr

vecmax, vecmln. vecvalX. vecyaly, tangent, veczera

Use "<c n>· as place holders for curves: and -<5 n> ~ for scalar values In the macros, where n represerrts: the argument used in the macro (n must start with 1) .

.close


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Threshold Voltage Extraction


Definitions of Threshold Voltage (1/2)

I d Maximum slope of the curve

VT

t Definition 1

Definition 2

• Id

Vg

--~~------~ Vg VT1

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Definitions of Threshold Voltage (2/2) • Macros

VT: I vecva7x(tangent«c1>, veczero(diff«cl> - vecmax(diff«c1»))) , 0.0)

VT1: I vecva 7x( <cl>, 1.0e-7)

Script functions VT:

I f_VT curveName xmin xmax ymin ymax

VT1: I f_VT1 curveName xmin xmax ymin ymax I

Inspect Script (1/4)

set N @node@ set Vd 0.05 set Lgshift @Lgshift@ set Lg [expr 2. O"SLgshift+O. 065] fLscalar Lg [format %O.3f SLg]

proj_load @plot@ PLT(SN) cv_createDS IdVg(SN) \

>-xmin, xmax, ymin, ymax, the range for computing the result; default values correspond to the full curve range.


"PLT(SN) gaLe OuterVoltage" "PLT(SN) drain TotalCurrent" y cv_setCurveAttr IdVg(SN) "Id" red solid 2 circle 0 defcolor 1 defcolor gr_setAxisAUr X {Gate Voltage (V)} 12 {} {} black 1 10 0 5 0 gr_setAxisAttr Y {Drain Current (A/urn)} 12 {} {} black 1 10 0 5 0 gr_setTitleAtLr "Id vs. Vgs (Lg=SLg urn, Vds=SVd V)" 14 center

#- Extraction #- Calculate the threshold voltage [V] set vt [f_VT IdVg(SN)] fLscalar vt [format %O.3f Svt] set vLl [CVT1 IdVg(SN)] fLscalar vt1 [format %O.3f SvLl]


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Set variables:

set set set set

N Vd Lgshift Lg

@node@ 0.05 @Lgshift@ [expr 2.0*$Lgshift+0.065]

Inspect Script (3/4) Load plot file: I proj_load @plot@ PLT($N)

Create curve: cv_createDS IdVg($N) \

H Lgshift

"PLT($N) gate OuterVoltage" "PLT($N) drain TotalCurrent" y

Set curve attribution:

Lg

H Lgshift


cv_setCurveAttr IdVg($N) "Id" red solid 2 circle 0 defcolor 1 defcolor

Set axis attributions: gr_setAxisAtLr X {Gate Voltage (V)} 12 {} {} black 1 10 050 gr_setAxisAttr Y {Drain Current (A/um)} 12 {} {} black 1 10 0 5 0

Set title: I gr_setTitleAtLr "Id vs. Vgs (Lg=$Lg um, Vds=$Vd V)" 14 center


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Calculate VT:

Iset vt [f_VT IdVg($N)] I Export the variable to the Family

Table of Sentaurus Workbench:

Calculate VT1 :

Iset vtl [LVTl IdVg($N)) I fcsca7ar ... fcsca7ar fcsca7ar

Lg [format %0.3f $Lg]

vt [format %0.3f $vt] vtl [format %0.3f $vtl]


Ex 1. Threshold Voltage Calculation

Project: IPostBasiclquestionlinspectinmos_rol/off_inspect

• Using macros: >Select batch mode

Edit Input>Preferences ...

• Using inspect script: >Select interactive mode

Edit Input>Preferences ... >Run.


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Sentaurus Structure Editor

~~~~~~

Generating 20 Boundaries With Online Training Material


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20 Exercise


Steps

• Draw> Exact Coordinates

• Draw> Overlap Behavior> New Replaces Old


73

Regions

Region Material Coordinates

Substrate Silicon (-0.5,0), (0.5, 1.0)

Gate

oxide Si02 (-0.2 -40e-4), (0.2 0.0)

Nitride (-0.2 -0.2), (0.2 -40e-4) Si3N4

spacer

Poly gate PolySi (-0.1-0.2), (0.1-40e-4)

Buried

oxide Si02 (-0.5 0.1), (0.5 0.2)

Edit> Separate Lumps.

Rounding Edges

.... Ix

>'. r:':;-' ;--'.;..:.... -'-' :.....;-:...;......;. •• >-'--, : . ...:....;.....~ . ) c~~.· j~~~t~~3 ... ,J:-~::.:- ~~~ , . r "l

',\/Woe; '-r:c:lo·~::'-.. -.. ~-'--~-"'--.-c ~-' .. r~'· :~e>~:_< 1 J

~"':~ ....•. :r::-:-. -~---'--'" .. -"'.:.-. -.·l: .. ~.Jl

llJrtU-<4 D IAPerture selectl .•

• Edit> Edit 2D > Fillet

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74

Declare Contacts

"""" "",

3IJ1;tt.!t411)"

S·

"" I I "'""

jW)(lOOO

I 0- I il \ .J

• (sdegeo:define-contact-set "source" 4.0 (color:rgb 1.0 0.0 0.0 ) "##")

• (sdegeo:define-contact-set "drain" 4.0 (color:rgb 0.0 1.00.0) "##")

• (sdegeo:define-contact-set "gate" 4.0 (color:rgb 0.00.0 1.0) "##")

• (sdegeo:define-contact-set "substrate" 4.0 (color:rgb 1.0 1.00.0) "##")

• (sdegeo:define-contact-set "bodytie" 4.0 (color:rgb 1.0 0.0 1.0 ) "##")


Set Contact (1)

• Contacts> Set Edge(s)

• (sdegeo:define-2d-contact (find-edge-id (position -OA 0.0 0.0)) "source")

• (sdegeo:define-2d-contact (find-edge-id (position OA 0.0 0.0)) "drain")

• (sdegeo:define-2d-contact (find-edge-id (position 0.0 1.0 0.0)) "substrate")

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Add Vertices

• (sdegeo:insert-vertex (position -0.10 0.1 0.0))

• (sdegeo:insert-vertex (position -0.05 0.1 0.0))

• (sdegeo:define-2d-contact (find-edge-id (position -0.07 0.1 0.0)) nbodytien)

Define Region as Contact

• Select Body

• Contacts> Set Region Boundary Edges

• Edit> Remove> Region

• (sdegeo:set-current-contact-set "gate")


• (sdegeo:set-contact-boundary-edges (find-body-id (position 0.0 -0.1 0.0)))

• (sdegeo:delete-region (find-body-id (position 0.0 -0.1 0.0)))


4/2/2009

76

Renaming Regions

• Select Body

• Edit> Change Region Name • (sde:add-material (find-body-id (position 0.0 0.8 0.0» "Silicon" "RSubstrate")

• (sde:add-material (find-body-id (position 0.0 0.15 0.0» "Si02" "RBox")

• (sde:add-material (find-body-id (position 0.0 0.05 0.0» "Silicon" "RSiliconepi")

• (sde:add-material (find-body-id (position 0.0 -20e-4 0.0» "Si02" "RGateox")

• (sde:add-material (find-body-id (position -0.15 -0.1 0.0» "Si3N4" "RSpacerleft")

• (sde:add-material (find-body-id (position 0.15 -0.1 0.0» "Si3N4" "RSpacerright")

• (sde:showattribs "all")

Saving the Model

• File> Save Model

• (sde:save-model "soifet_bndn)

• model geometry - native ACIS format file soifet.sat

• Ref/Eval windows and parameters - soifet.scm

• DF-ISE format refinement and doping - soifet.cmd

• DF-ISE format boundary - soifet.bnd

• To use the TOR format for the boundary file:


• (sdeio:save-tdr-bnd (get-body-list) "soifet_bnd.tdr")


4/2/2009

77

Defining Constant Doping Levels in Materials

• (sdedr:define-constantprofile "ConsLSilicon" "BoronActiveConcentration " 1e+15)

• (sdedr:define-constantprofile-material "PlaceCD .Silicon" "ConsLSilicon" "Silicon")

·"remJ!.m·W:\;W!Ijl!)m.:::::r:::::mrr~~.,-~

i ; """"""""'" ~'Pi~cD-5if;;; ~j

PlillCeTneotType

0"'""'" .J ORog;on .J ® Mat"'" I .. ·oon ~l

CortrtantProfiltDe1inition------------,

Name tComt.Sir~· ~I

Specb I Bor0n.Activ6Concentration ~J j i j!

~----~lo==~~-----D~~ Decay factor 0 On Replace

I Ch", .. ___ I I "'.Ie"-,n! I ~ ; L..-_______ ------_=-..1


Defining Constant Doping Levels in Regions

• (sdedr:define-constantprofile "ConsLEpi" "BoronActiveConcentration" 1e17)

• (sdedr:define-constantprofile-region "PlaceCD.Epi" "ConsLEpi" "R.Siliconepi")

rPlaalmentType---------,

o flef/'Mn

@Atglen I A.SI\Ic:onepl ~l

,CorohlntProllleDefnition------------, I NMn, 1<-:0;."_,...:",,,_·· _______ . ·_····--'~I I Spec~ lConct:ntnillon j

Decay FlIC101'

I _""""",eor-"""on . ¢ I Jle+17

10 DOn

: I Cl1~e~t I I'-_""_',_ .. _~"""""_t__.J OR"".,.

lb..-.-.-.-.-.. ---... --------... ---.~ .. - .. --.--... --.. --.. --.... -... --.. -.-... -.---~=I


4/2/2009

78

Defining Analytic Doping Profiles (1)

Define Baseline (sdedr:define-refinement-window "BaseLine.Source" "Line" (position -0.80.00.0) (position -0.2 0.0 0.0)) (sdedr:define-refinement-window "BaseLine.Drain" "Line" (position 0.2 0.0 0.0) (position 0.8 0.0 0.0)) (sdedr:define-refinement-window "BaseLine.SourceExt" "Line" (position -0.8 0.0 0.0) (position -0.1 0.0 0.0)) (sdedr:define-refinement-window "BaseLine.DrainExt" "Line" 0.1 0.0 0.8 0.0 0.0))

Junctions Basolino Name start Point EndPoint

BaseUne.Source .(l.80 .(l.20

Dram BaseUne.Orain 020) 0.80)

Qurce extenS10n BaseUne.SourceExt .(l.80) .(l.10)

rain extension BaseUne.OrainExt 0.10 0.80

I

Defining Analytic Doping Profiles (2) ~2~----------------'

Junctions Placement Name Baseline Name ProfiloName

PlaceAP.Source BaseUne.Source Gaussian.SourceOrain

Dram PlaceAP .Drain BaseUne.Drain Gaussian.SourceOrain

ource ExtenSIon PlaceAP .$ourceExt BaseUne.SourceExt Gaussian.SourceOrainExt

Dram Extension PlaceAP.DrainExt BaseUne.OrainExt Gaussian.SourceDrainExt

Profile Name Peak Peak Junction Junction Lateral Concontmtion Position Concontnation Depth Factor

Gaussian.SourceOrain x10,g cm--J Dum 1017 cm-3 0.12um 0.8 aussian.$ourceQrainEx 5x1016 cm-J Dum 1011'cm-J 0.035 m 0.8

~1

01

02

03

)-0.4

05

OS

07

08

09

-05 -025

• (sdedr:define-analytical-profile-placement "PlaceAP_Source" "Gauss_SourceDrain" "Baseline. Source" "Positive" "NoRepiace" "Eval")

o X

025 05

(sdedr:define-gaussian-profile "Gauss.SourceDrain" "PhosphorusActiveConcentration" "PeakPos" 0.0 "PeakVal" 5e19 "ValueAtDepth" 1e17 "Depth" 0.12 "Gauss" "Factor" 0.8)

• (sdedr:define-analytical-profile-placement "PlaceAP.Drain" "Gauss.SourceDrain" "BaseLine.Drain" "Positive" "NoReplace" "Eval")

• (sdedr:define-analytical-profile-placement "PlaceAP.SourceExt" "Gauss.SourceDrainExt" "BaseLine.SourceExt" "Positive" "No Replace" "EvaI'") (sdedr:define-gaussian-profile "Gauss.SourceDrainExt" "ArsenicActiveConcentration" "PeakPos" 0.0 "PeakVal" 5e18 "ValueAtDepth" 1e17 "Depth" 0.035 "Gauss" "Factor" 0.8) (sdedr:define-analytical-profile-placement "PlaceAP.DrainExt" "Gauss.SourceDrainExt" "Baseline. Drain Ext" "Eval")

synopsys' PredictableSucce$$

4/2/2009

79

Defining Mesh Strategies in Regions

• (sdedr:define-refinementsize "RefDef.Epi" 0.1 0.01250.0050.005)

(sdedr:define-refinementregion "PlaceRF.Epi" "RefDef.Epi" ''R.Siliconepi'')

(sdedr:define-refinementfunction "RefDef.Epi" "Doping Concentration" "MaxTransDiff' 1)

-"""" IIp,,;,,RF . .,,, . ~I

""""""''''''

lf~ ! o Aef/Wln 1 ~I ~ ®RogIOn IR.-""" ~I I

~ ~l i

0""1"'" 1

Reflf'lementDef.rutlon-.-----------

X Directlon yOirectlon ZOlrcctlon

Max Element Size 10.100000 ~_012500 Min EJementSlze rjooo-,-ooo-- r~ 0--050--00~- r----

Change P1ac:ement I I Dele:te PIacemerlt I

Defining Mesh Strategies in Refinement Windows

• (sdedr:define-refinementwindow "RefWin.all" "Rectangle" (position -0.5 1.0 0.0) (position 0.5 -0.2 0.0»

• (sdedr:define-refinementwindow "RefWin.Channel" "Rectangle" (position -0.1 0.00.0) (position 0.1 0.1 0.0» ( sdedr:define-refinementsize "RefDef.all" 0.25 0.1 0.250.1)

• (sdedr:define-refinementplacement "PlaceRF .all" "RefDef.all" "RefWin.all")

"'.;IA.I •• I •• · •.• ,

Placement Name

MaX Bement SIze

Min 8ementS@

~

I~ """"'="':=' =======::: I ·1 j

YOirectlon

10250000

r-lo,-ooooo---lo.looooo

~I

~I Z Direction

,Refrnemenifu'lctiOr'l:l---------------,

i 180"'Wtiv<Conrentntlon : ~I '"'" VoI-:-"'::::I>f,:-""""----:-1~1 "1' ---

II r~=·=--__ ...1I=Crit=,ria _ _.L.:I\kruo"'__ __ __'1 : :: :

I a.n,,_, I I ""'I,,,,,,,,",,,,,

4/2/2009

80

Defining a Multibox Mesh Strategy in Refinement Windows

• (sdedr:definemultibox-size "MB.Channel" 0.050.01250.025 1e-41 1.35)

• (sdedr:definemultiboxplacement "PlaceMB.Chann el" "MB.Channel" "RefWin.Channel" )

Build Mesh

Placement Name Llfptace_M_B.O=m __ ' _____ --'~l

rp",,""""TYP'

! RefI'Mn ,-, "-""o-.o,-ann-d ----:-.~ I

! rM"tiboxDFefl""~""~~ __ ~~_~ i -,I ,-!MB~~~ ______ ~~I

j X v

""" 1°·050000 - 10.01= - 1 M;n 10.025000 "'" 10.000100 "'" 1 Ratio )1.000000 Ratio 11.350000[ R>.tlo I ;~----------------~ I I =.,p,=",. I I "'."P""""'" I I 00" II L ....................... --........ -----.--.-... -............ -... -.. -. ".J


• Mesh> Build Mesh.

>-001

002

0>-

003

004

005

o

0.5

·0.5 -0.25 0 0.25 0.5 X


4/2/2009

81

4/2/2009

Sentaurus Structure Editor 3D Structure With Online Training Material

~--~~======--~


2D 501 M05FET • Draw> Auto Region Naming [off]

• Exact Coordinates

• Draw> Overlap Behavior> New Replaces Old

• Isometric View

• Draw> Create 3D Region> Cuboid

• (sdegeo:create-cuboid (position -0.25 -0.2 0) (position 0.25 0.2 -1.0) "Silicon" "SubsSilicon")

• (sdegeo:create-cuboid (position -0.2 -0.2 0) (position 0.2 -0.1 -0.2) "Oxide" "T renchOxide _Right")

• {sdegeo:create-cuboid (position -0.2 0.1 0) (position 0.2 0.2 -0.2) "Oxide" ''TrenchOxide_Left")

• (sdegeo:create-cuboid (position -0.15 -0.2 0) (position 0.15 0.2 0.002) "Oxide" "GateOxide")

• (sdegeo:create-cuboid (position -0.1 -0.1 0.002) (position 0.1 0.2 0.1) "PolyS;" "PolyGate")


82

Changing View

Poly Re-oxidation

• Old Replaces New f1)JJ!iilJi;ij]@~ tOld replaces nOWl

• (sdegeo:set-default-boolean "BAB")

• (sdegeo:create-cuboid (position -0.103 -0.1030) (position 0.103 0.2 0.1) "Oxide" "PolyReOxide1 If)

• (sdegeo:create-cuboid (position -0.15 -0.103 0) (position 0.15 0.2 0.005) "Oxide" "PolyReOxide2")

4/2/2009



83

Nitride Spacer

• (sdegeo:create-cuboid (position -0.15 -0.15 0) (position 0.15 0.2 0.08) "Si3N4" "NiSpacer")

• (sde:define-parameter "fillet-radius" 0.03 0.0 0.0 )

• (sdegeo:fillet-edges (list (car (find-vertex-id (position -0.15 -0.15 0.08))) (car (find-vertex-id (position 0.15 -0.150.08))) ) filletradius)


Define Contacts

I ~ It

(sdegeo:define-contact-set "gate" 4.0 (color:rgb 1.00.00.0) "##" )

(sdegeo:define-contact-set "drain" 4.0 (color:rgb 1.00.00.0 ) "II" ) (sdegeo:define-contact-set "source" 4.0 (color:rgb 1.00.00.0) "==" )

(sdegeo:define-contact-set "substrate" 4.0 (color:rgb 1.00.00.0 ) "<><>" )


4/2/2009

84

Setting Contacts at Existing Faces

i none

gate drain source

• Contacts> Set Face(s)

I§J~:< 0'0

, IAPerture Selec(

• (sdegeo:set-current-contact-set "substrate")

• (sdegeo:set-contact-faces (find-face-id (position 00 -1)) "substrate")

• (sdegeo:set-current-contact-set "gate")

• (sdegeo:set-contact-faces (find-face-id (position 0 0 0.1)) "gate")


Setting Contacts at New Faces

The corresponding Scheme commands for creating and deleting the two metal regions are:

(sdegeo:create-cuboid (position 0.17 -0.1 0) (position 0.25 0.1 0.05) "Metal" "Source")

• (sdegeo:create-cuboid (position -0.25 -0.1 0) (position -0.17 0.1 0.05) "Metal" "Drain")

• (sdegeo:delete-region (find-body-id (position 0.22 0 0.025))) • (sdegeo:delete-region (find-body-id (position -0.22 0 0.025)))

The corresponding Scheme commands for placing the source and drain contacts are:

(sdegeo:set-current-contact-set "source") • (sdegeo:set-contact-faces (find-face-id (position -0.22 0 0)) "source") • (sdegeo:set-current-contact-set "drain")

(sdegeo:set-contact-faces (find-face-id (position 0.220 0)) "drain")


4/2/2009

85

Defining Constant Doping Levels in a Region

• (sdedr:define-constant-profile "Const.Bulk" "BoronActiveConcentration" 1 e17)

• (sdedr:define-constant-profile-region "PlaceCD.Bulk" "Const.Bulk" "SubsSilicon")

• (sdedr:define-constant-profile "Const.Poly" "ArsenicActiveConcentration" 1 e20)

• (sdedr: define-constant-profile-region "PlaceCD. Poly" "Const. Poly" "PolyGate")

I~

I~- ;1 1,-"

Defining Analytic Doping Profiles

• Mesh> Define Ref/Eval Window> Rectangle. • (sdedr:define-refinement-window "Baseline. Source" "Rectangle"

(position 0.30 -0.25 0.0) (position 0.15 0.25 0.0) )

• (sdedr:define-refinement-window "BaseLine.Drain" "Rectangle" (position -0.30 -0.25 0.0) (position -0.15 0.25 0.0) )

• Device> Analytic Profile Placement • (sdedr:define-gaussian-profile "Gauss.SourceDrain"

"ArsenicActiveConcentration" "PeakPos" 0.0 "PeakVal" 1e19 "ValueAtDepth" 1e17 "Depth" 0.1 "Gauss" "Factor" 0.8)

synopsys' Predictable SUC~$$

• (sdedr:define-analytical-profile-placement "PlaceAP.Source" "Gauss.SourceDrain" "Baseline. Source" "Both" "NoReplace" "Eva I")

• (sdedr:define-analytical-profile-placement "PlaceAP.Drain" "Gauss. SourceD rain" "Baseline. Drain" "Both" "NoReplace" "Eval")


4/2/2009

86

Defining a Meshing Strategy in a Window

• (sdedr:define-refinement-window "RefWin.Global" "Cuboid" (position -0.25-0.2 -0.5) (position 0.25 0.2 0.1))

• (sdedr:define-refinement-size "RefDef.Global" 0.1 0.1 0.1 0.05 0.05 0.05 )

• (sdedr:define-refinement-placement "Place. Global" "RefDef.Globaln

"RefWin.Global" )

• (sdedr:define-refinement-window "RefWin.Active" "Cuboid" (position -0.25 -0.2 -0.15) (position 0.25 0.2 0.0))

• (sdedr:define-refinement-size "RefDef.Activen 0.025 0.025 0.025 0.0125 0.01250.0125 )

• (sdedr:define-refinement-placement "Place.Active" "RefDef.Active" "RefWin.Active")

r:Vtlfiniffffft"f'ITf?WtiiW.-'7 fff?/ff"WFr~rwepw11rtto.~~

1-- ~- [:-I

.fIcfI~ !_o_ ~I c=J l O/lq>n I ~ ~I '

J Ololal_ I ~I c=J : I -~- .-------- ------ ---- ~ ---, i .... i-- 'I ' ! i--- ~~~, 1--- ~~~; 1 r:==::--·--;IIv.:·:----·· .. ··:·l-; .. ---··-.. ----·· ... ·ll.

Il[ ______ .. ~~:___I= _________ ->~~J I! i~~==~====~----~~~ 11--11 1 ~; I .. ________ :J


Defining a Multibox Mesh Strategy in a Refinement Window

• (sdedr:define-refinementwindow "RefWin.Channel" "Cuboid" (position -0.12 -0.1 -0.05) (position 0.12 0.1 0»

• (sdedr:define-multibox-size "RefDefMB.Channel" 0.1 0.1 0.01 0.050.050.001 1 1 -1.5 )

• (sdedr:define-multiboxplacement "PlaceMB.Channel" "RefDefMB. Channel" "RefWin. Channel" )

t!"ml:>tlrla:Ollrn.1 ;1


4/2/2009

87

Build Mesh

The corresponding Scheme command is: • (sde:build-mesh "mesh" "-P" "3dmos") In the TOR format, the Scheme command for the meshing operation is: • (sde:build-mesh "mesh" "-P -F tdr" "soifet_msh") Note: use SNMESH (doping profile [tdr] can be viewed with option in postprocess)



4/2/2009

88

Sprocess simulation by Ligament

• Sprocess > properties: select "Use Ligament" option on the dialog box

• Edit Input> Ligament flow: set up a process flow

• Ligament Workspace: refer to on-line training material "Ligament 0.7 Ligament Workspace"

• On-line training material provide a detail introduction in chapter "Ligament"

synopsys' Predictable-Success

Ligament • Use Ligament to Build up the Device Structure

........... bO~On


4/2/2009

89

Environment & Substrate Names

S'-:;::::i'Flow"i-:R~ t--~ substrate

9--!i£" well 43-:!~ Gox e-!~ Po!yGate e-!Ei" LOO e.-:.!~ S.pacer l3-!~ SO e-=!~ Metal r!1t- struc 9-!~ extraccsa ..... _e

title dop~

"e d~pant

:.4! ~.9. nM.OSFET ~a~ : boron concen

# 2D nMOSFET save boron concen

Name : ... __ ~y~e ~"")trtle' ·········S·tnn·g·_·_·-

l-:-::-(-:l s.ave Boolean f-{-) grid : Boolean i-(-) debug . Soolean H-) chec.~'.d Boolean

~~=~ :~:~~ :-~:~~:r q;~~~~ .~~: j--(-) node .. string H-) sIde : Sjde }-(-) g~p'hjcs . Boolean r-:--<-) depth :"Dlstarlce 1--<-) uSer-9r1d ; GrId 8--(-) gnd_refinement _ :'~ridff~! ~-:-(-) ~~pr~~ .. ~~I~,.. velf:. Q~aJ}~~_ r--<-) tsuprem4_delta_ho~ Distance r--(-) tsuprem4_mln_ vertl~ Distance Y-:-) tsupre~_min_hOrI.z~ Dj~tance_.

Name '~:'j"dopa~t'-'-(-) concentration i..-.{-) resistivity 1-{-) orientation Y-ltype

Type

"O'opa"t Concentration Resistivity Number

Type

Value

iii 20 -n~iOSFET we true false false false sprocess

"0011 'n@oode@ \@node@ front r3Jse

Un"

5 "um Ad:-'3!.lCed~al!br:·

0.5 'O.S :um

0.1 0.1

Value

boron 1e15 o 100 defautt

/emJ ohm-em


Well Implant, Gate Oxide, PolyGate

material sp~cies

:-sp~"a~s species time ~atefjai'v

'iext

'dia-s' mate~ii1 material

'matertaJ

A

.. 20 nMOSFET save. boron

·OXide···· ""biiro"Tl

boron boron O.~_~ec _ oxide

.- Gate

10 min ··S mln~-

pOlyGat~ poly.

poly resist oxide 10 min

conce

thicknes doss······ dose dose

"t~~p.~ra thicknes

te~per tempe t~'mp~~ ~.P.~~.~s

... ~P'!p'g.~.~ thicknes ttircknes thicknes

1~~P~~


4/2/2009

90

LDD, Nitride Spacer, Source/Drain, Metal Pad

Names . , .... _.~9_ .. _ .. _. .. -.. -~~~!~. -~ .. ; AI

8--~Flow f..-·B environment title ., 20 nMOSFET save ;-~4,l substrate 13---!~ well

dopaf'!1 boron concent

13-'}; Gox e-·!.F Po!yGate S,..!~ LDD 1 ~~. ~omment text ... LDD

:-----;}> Insert dlDS spracss r-~imp!~t sp~-;:Ies. boron dose r--~ implant species tioron . dose J--~ implant specie:s. boron "dose , r-~~ Implant $p~.cle_~ ~or'~n . ~C?s~

1 l--~jnsert dlos spraees ~~.tmp!?O~ sp~c!.es arsenic dose L-Jl~ anneal ,time 0.02 sec te_mp:9:~

~··:-T-!.~ Spacer I. ~comm~nt text . ~pacer I, deposit material nitride thlCknes I l--"T etch material nitride thlcknes 1 ~e1Ch matedai oxide thicknes &.T!~ SO 1 -}--c;D comment text SD 1 }-~insert diDS sproees

I }--~ !mplant species arsenic dose L_,..6"", anneal time 0.02 sec tempera:

~~~h material oxide : 1hlcknes ~~depOSjt material aluminum thicknes f-/;5 rnsert dlos sproc.es

: r--i!, etch matenal aluminum thlcknes ! l~~etch material resist thicknes 8--!a- struc 9--!~ extract_save

Environment

• Title: 20 nMOSFET 0.18

• Simulator: sprocess

• Region: 0 0 1 1

Substrate

• Dopant: boron

• Concentration: 1 e15 Icm3

4/2/2009

synopsys' Pred lctable SUccess


91

4/2/2009

Well

• Deposit: oxide, 0.01 um

• Implant: • Boron, does 2e13/cm2, energy 200 keV

• Boron, dose 1e13/cm2, energy 80 keV

• Boron, dose 6e12/cm2, energy 25 keV

• Anneal: 0.3 sec, 1050 C, 1 atm, Nitrogen 100%

• Etch: oxide, strip


Gate Oxide

• Anneal: 5 min, 650-850 C, 1 atm, Nitrogen 100%

• Anneal: 10 min, 860 C, 1 atm, Oxygen 100%

• Anneal: 5 min, 850-650 C, 1 atm, Nitrogen 100%

• Grid Remesh (Insert)

• grid remesh

• select z=Boron

• layers


92

Poly Gate

• Deposit: poly, 0.18 urn

• Mask (insert): • mask name=gate_mask left=-0.1 right=\$lgate/2 negative

• photo mask=gate_mask thickness=2

• Etch: poly, 0.2 urn, anisotropic

• Etch: resist, strip

• Etch: oxide, 0.1 urn, anisotropic

• Anneal: 10 min, 900 C, 1 atm, nitrogen 5 IImin, oxygen 5 IImin


LDD

• Remesh (insert) • refinebox silicon min= {O.O O.S*\$lgate-O.OS} max= {0.06 0.S*\$lgate+0.04}

xrefine= {O.01 0.01 O.01} yrefine= {O.01 0.003 O.01} add • refinebox remesh • transform reflect left

• Implant: • boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,

rotation=O • boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,

rotation=90 • boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,

rotation=180 • boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,

rotation=270

• Cut (insert): transform cut location=O.O left

• Implant: arsenic, 1 e15 cm2, 20 keV

• Anneal: 0.02 s, 1050 C, 1 atm, nitrogen 100%


4/2/2009

93

Spacer

• Deposit: nitride, 60 nm

• Etch: nitride, 84 nm, anisotropic

• Etch: oxide, 10 nm, anisotropic

Source/Drain

• Mesh refine (insert) • refinebox silicon min= {O.O \$lgate/2-0.02} max= {0.22

\$lgate/2+0, 15} yrefine= {0.02 0.01 0.02} add

• refinebox remesh

• Implant: arsenic, 4e15 Icm2, 30 keV

• Anneal: 0.02 s, 1080 C, 1 atm, nitrogen 100%

4/2/2009



94

Metal

• Etch: oxide, 5 nm, anisotropic

• Deposit: aluminium, 30 nm

• Mask: • mask name=contacts_mask segments = {-O.1 \$lgate/2-0.005

\$lgate/2+0.1 \$ymax} negative

• photo mask=contacts_mask thickness=2

• Etch: aluminum, 0.25 um, anisotropic

• Etch: resist, strip


Finalise (insert) • transform clip min= {-1 -1} max= {2 10}

• contact name=gate point x=-O.2 y=O.001 replace • contact name=drain point x~0.02 y=\[expr \$ymax - 0.001\] replace • contact name=substrate box silicon xlo=1.5 ylo=O xhi=2.5 yhi=\$ymax

• set Ygox \~nterface oxide /silicon y = 0.001 \] • set Ypol \~nterface poly /oxide y = 0.001 \] • setYtmp \[expr\$Ygox + 0.005\] • setTox \[expr\$Ygox - \$Ypol\]

• sel z = NetActive • set Xgd \[interpolate x = \$Ytmp silicon val=1 e15\] • set Xj \[interpolate y = 0.5"\$lgate+0.39 silicon val=1e15\]

• #set Lgeff x • puts \"DOE: Lgeff\[format %.3e \[expr 2.0*\$Xgd\]\]\"

• #setXj x • puts \"DOE: Xj \[format %.3e \$Xj\]\"

• #setYgox x • puts \"DOE: Ygox \[format %.3e \$Ygox\]\"

• #setTox x • puts \"DOE: Tox \[format %.3e \$Tox\]\"


4/2/2009

95

synopsy~r Predictable Success

cvQVrfWrve: long channel transistor

Accumulation region:

Good fit indicates

correct oxide thickness.

Bottom region:

Good fit indicates. that the channel profile is

correct

Inversion region:

Used to adjust the doping concentration

in poly-SiJicon.

2e-14~--------~--------~~Jr--lL ______________ J

~ ~ le-14

-2 -1

Threshold voltage:

yDopant concentration at the gate oxide interface

)- Interface charges


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C-V Device Simulation

• Small-signal AC analysis (2007.12 P.183)

• AC simulation are performed in mixed mode (2007.12 P.163).

• Extract conductance and capacitance of each node, and output matrix A (conductance) and matrix C (capacitance).

• j = Yu = Au + iwCu

• j is the vector containing the small-signal currents at all nodes.

• u is the corresponding voltage vector.


C-V Simulation Command File

Device "device1" { File { "define device input and output file"}

Electrode { "same with IV simulation"}

Physics { "same with IV simulation and tum on minority carrier quantum

}

File

Plot

Math

potential equation for accumulation side CV extraction" }

{ "define system output file"}

{ "same with IV simulation"}

{ "same with IV simulation" }

System { "based on previous device1 and the voltage source of each node construct a simple circuif' }

Solve { "set bias sweeps sequence, solve transport models and extract AC parameters" }

synopsys' Predlctable$uccess

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" -~

c-v Device Simulation Result

• Cgg: gate node capacitor

• Ccg: drain node + source node

• Cbg: substrate node

Cgg = Ccg + Cbg

1e-013

1e-15

-1

Gate Voltage (V)

~ 5e-014 v

-1 o

Convergence - Breakdown Device Simulation

• n-th step converge, next l1 V n+1 > l1 V n

• n+1-th step diverge, then l1 V n+1 = l1 V n/2 • The voltage step will be divided by 2 again and again, until it converges or until it reaches a minimum step that we define in the command file.

10

,_-----VL: ,

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98

Breakdown Device Simulation

• An approach to solve divergent and snapback issues

• Introduction please refer to on-line training material "SDevice section 0.1 MOSFET Breakdown Simulation"

~ ... 10S Breakdown

Vd_outer (force)

rl l----,

Drain Voltage (V)


Breakdown Device Simulation

• Modify SDevice command file

• Turn on Avalanche and Band2Band model

• Solve dual carrier transport

• Detail please refer to 90nm nMOS breakdown example.


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99

Preparation

• Copy the 0.18um_nMOS project and rename it as 90nm_nMOS, then clear up all the output files

• SProcess uses the -f option to speed up the simulation time for structure verification

• -f option skip diffusion and monte carlo implant step

• Refer to SProcess manual 2007.12 P .52

• It will cause some parameter extraction failure because of a missing net doping profile. When we are sure the device structure is correct, we should remove the -f option to do a complete simulation.

4/2/2009


synopsys' PrecfictableSucce$s

100

Reference: SProcess, pS2

• Command-line options

Option

--Fa"n!ode

--GENES.IS€..~;:

--pdb

Shottnam~

-b

-f

Function

Switcb off graphics.

Gt."llC'~tI.c stJ:ucturc~ 00 ditru};ton.. n(l rncimpiUlll. and so Oil.

-11 SwItch off Jot.: fil~ creation.

-p Run F"J.t"::U11Ct.:.( Dat.tt'ta;;~ Browser 'Showing par:l.mct€'ls 3.~ th~y ,:tfc s>.!'t duriUf: nll1-tim~ 11lA.~ludtt dcia.ult pafatnt.!'tr.:t"'3 and pafamc("'" ffOOl the input 111< if ~p~ifi.ed.


Structure Comparison

• 0.18um nMOS • 90nm nMOS


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101

Process Comparison

• 0.18um nMOS

WeliNth implant & anneal Boron dose=2e13 energy=200 till=O rol=O Boron dose=l e13 energy=80 till=O rol=O Boron dose=6e12 energy=25 till=O rol=O diffuse temp=1050 time=0.3<s>

Gox-33A diffuse temp=650 ramprate=0.6666 time=5 diffuse temp=850 time=10 02 1 atm diffuse temp=850 ramprate=-O.6666 time=5

POLY height = O.18um deposit poly type=isotropic thickness=0.18

Halo/LDD implant & anneal Boron dose=le13 energy=15 till=30 I roI=0,90,180,270 Arsenic dose=le15 energy=20 tilt=O rol=O diffuse temp=l 050 time=0.02<s>

• 90nm nMOS WeliNth implant & anneal Boron dose=2e13 energy=200 till=O rot=O Boron dose=le13 energy=80 till=O rot=o Boron dose=8e12 energy=30 till=O rol=O diffuse temp=l 050 time=0.3<s>

Gox-18A diffuse temp=650 ramprate=0.6666 time=5 diffuse temp=850 time=l 0 02=0.8<l/min> N2=9.2<l/min> 1 atm diffuse temp=850 ramprate=-O.6666 time=5 ../

POLY height = O.15um deposit poly type=isotropic thickness=0.15

Halo/LDD implant & anneal Boron dose=2e13 energy=12 tilt=30 I rot=d,90,180,270 Arsenic dose=l e15 energy=5 tilt=O rot=o diffuse temp=l 020 time=0.03<s>

synopsy:r Predictable Success

Process Comparison • 0.18um nMOS

Nitride Spacer deposit nitride type=isotropic thickness=0.06 etch nitride type=anisotropic thickness=O.084 etch oxide type=anisotropic thickness=O.Ol

Source/Drain implant & anneal implant Arsenic dose=4e15 energy=30 till=O rot=O diffuse temp=1080 time=0.02<s>

• 90nm nMOS

ONO Spacer deposit oxide type=isotropic thickness=0.005 deposit nitride type=isotropic thickness=0.015 deposit oxide type=isotropic thickness=0.06 diffuse temperature=720 time=20 etch oxide type=anisotropic thickness=0.1 etch nitride type=anisotropic thickness=0.03 etch oxide type=anisotropic thickness=0.015 #- consider native oxide ------deposit oxide type=isotropic thickness=0.0015

Source/Drain implant & anneal implant Phosphorus dose=1e15 energy=6 till=O rol=O implant Arsenic dose=5e15 energy=30 tilt=O rol=O diffuse temp=l 050 time=0.03<s>


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4/2/2009

SProcess Mesh Comparison • 0.18um nMOS • 90nm nMOS

==--------~~- ---------~

SDevice Mesh Comparison • 0.18um nMOS • 90nm nMOS

=-=-=c;;-----,,------: _'--1

103

Id_ Vg Curve Comparison

• 0.18um nMOS • 90nm nMOS

• Vdd=1.5v; Vds=O.05v • Vdd=1.2v; Vds=O.05v

0.0001

8e-05

E 6~05

~ ::!:! 4~

2e-05

0

Hints

O.18um VS. 90nm nMOS IdVg Vds=O.05

.---gm_0.18um

·---gm_90nrn

-ld_0.18um -ld_90nm ;

0.0002

0.00015

00001

5~05

+-~~~~~~r-r-~~~~~-+O

0 0.5 1.5

Vg (volt)

(!l

3

~ <' ~ c· 3 ~

• Need to translate the process conditions into correct syntax of Sprocess.

• Poly height has been changed from O.18um to O.15um, need to update the coordinate of gate contact in Sprocess.

synopsys' PredlctableSuccess

• After finish the modification of Sprocess, whole simulation flow (Sprocess, SSE, Sdevcie, Inspect) can be executed well.

• In Sprocess, fine tune LOO & SO refine-box to get a more accurate doping profile.

• In SSE, fine tune variable "PNres" to optimize the mesh of LOO and SO junction to get a more accurate Sdevice simulation result.


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Modify nMOS Template to pMOS

• SProcess: change to pMOS process condition

• SDE: change PLOY dopant type from N-type to P-type

• SDevice • Change majority carrier from electron to hole and related

models. (Exchange e and h in input file in most cases.)\

• Biasing Condition

• Inspect: change device type and extraction region for "Extraction library"


Structure Comparison

• 90nm nPOS • 90nm nMOS 1... ..


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105


Process Comparison

• 90nm pMOS

WeliNth implant & anneal Phosphorus dose=2e13 energy=3S0 tilt=O rot=O Phosphorus dose=1 e13 energy=200 tilt=O rot=O Arsenic dose=4e12 energy=100 tilt=O rot=o diffuse temp=1 OSO time=0.3<s>

Halo/LDD implant & anneal Arsenic dose=2e13 energy=80 tilt=30 I rot=O,90,180,270 BF2 dose=6e14 energy=3 tilt=O rot=o diffuse temp=1 020 time=0.03<s>

Source/Drain implant & anneal implant Boron dose=1e1S energy=3 tilt=O rot=O implant Boron dose=Se13 energy=6 tilt=O rot=O diffuse temperature=10S0<C> time=0.03<s>

• 90nm nMOS WeliNth implant & anneal Boron dose=2e13 energy=200 tilt=O rot=O Boron dose=1 e13 energy=80 tilt=O rot=o Boron dose=8e12 energy=30 tilt=O rot=O diffuse temp=1 OSO time=0.3<s>

Halo/LDD implant & anneal Boron dose=2e13 energy=12 tilt=30 I rot=O,90,180,270 Arsenicdose=1e15 energy=5 tilt=O rot=O diffuse temp=1020 time=0.03<s>

Source/Drain implant & anneal implant Phosphorus dose=1e15 energy=6 tilt=O rot=O implant Arsenic dose=5e15 energy=30 tilt=O rot=O diffuse temp=1050 time=0.03<s>

Structure Extraction Source/Drain implant & anneal set Xgd Dnterpolate x = $Ytmp silicon val=-1e15] set Xgd Dnterpolate x = $Ytmp silicon val=1e15] set Xj [interpolate y = 0.5*$lgate+0.39 silicon val=-1e15] setXj Dnterpolate y = 0.5*$lgate+0.39 silicon val=1e15]

synopsys' Predict3bleSuccess

4/2/2009

106

Other Parameters • 90nm pMOS

Poly Doping (sdedr:define-constant-profile "Const.Gate" "BoronActiveConcentration" PolyDop )

Biasing Goal { Name="drain" Voltage=-@Vds@ } Goal { Name="gate" Voltage=-@Vdd@ }

Coupling Coupled { Poisson Hole hQuantumPotential }

Inspect

• 90nm nMOS Poly Doping (sdedr:define-constant-profile "Const.Gate" "BoronActiveConcentration" PolyDop )

Biasing Goal { Name="drain" Voltage=@Vds@ } Goal { Name="gate" Voltage=@Vdd@ }

Coupling Coupled { Poisson Electron eQuantumPotential }

Inspect setT ype pMOS set SS [ExtractSS SS

set Type nMOS IdVg($N) [expr $Vti+O.0511 set SS [ExtractSS SS IdVg($N) [expr $Vti-O.0511



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4/2/2009

Outline

• How to register a SolvNet account?

• What kind of TCAD resources we can find on SolvNet?

• Software,

• Manual

• Release Notes

• TCAD Example updates


SolvNet Website http://solvnet.synopsys.com/

synopsys'

Wek:o.me To Syn0:p-sysSlg" In

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Apply an account firstly Login


108

SolvNet Register

synopsys'

New User Registration

SolvNet Register

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4/2/2009


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109

SolvNet Register -----------'3 cJ Go

I synopsys 50;,,["2,

r'jj/':Ti ! -,i§iitr-tttm1ilti!MtHHS __ 4#iiMillli@[email protected]

New Use,. Registration

Important: Please Read Before Registering i To. access to all Synopsys Online Services. ,;ou must provlde an k~r"·,,, S'te lC In the field below These serdees include .

~ SoM'·Jet Know1e::!ge Base of self-help documents ~ OnGne Product DocumentatlOn • SmartKe\, license Retrie-.C31 .,. Electronic Software DO'A<nloads • ViewSupport and Support Case Tracker - ",19* status.of open support cases

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syn0 psys, 50ivN",


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Since you are requesting access to confidential Synopsys infurmati::m, ",e wll1 need to 'ie-rifj your site infotrro3tion_ You will recerve an email asking you to confirm your email address. Please be sure to read and act on that message

Applicant will receive a confirmation letter

Registratiqn Help



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SolvNet HomePage

search TCAD documents by keyword

ViHATS Nfj."'1 ON SOLVNH

{'<';"-">~~~"S'I'~ c"",: ,-, ;" ;)!~<'>< .' r-a,><,';-'> Th~ Soh-Net Do'hnlo.ad Center f<:!atur,:-s a redeslqned int~".! that dispLays the lat~st ,jownl.r:.ad information for "our S..nopsvs products in a =entraliziXIlocation. ..... ,-" - - . ~ .:. ~.

i~:i~~~· ~~\~~E~; ::;~l~;~~\:~~;~{"g mcduJes tv IEam about r~le3s-e .:nh3~m.:nts to DFT, Star RCXT, T'2trar-laY", SSD Compiier, DesliJf1 CQmpd",r, Ie Compder. NanoTime, Pnm~Tlm-=, Pru.neTlflle ~·X, and ~!J.,.,~r Compd':"!f.

. TECHNICAl.. NEWS A.ND EVENTS

S.?'MC "):H:i~;; ?I~ for Pap~s -:. ,':::- !; ''-',- Ie:' .,". J

Predictable Success

4/2/2009

> VI."!"" ST AR<;

> My SubscriplJor:lS

> ttv Product!>



111

Untitled We will be conducting a TCAD Sentaurus product tralnlng in our office on the 8th and 9th of April in our synopsys singapore training center: 300 Beach Road, #31-06, The concourse, singapore 199555.

The agenda are as follows: Title: Sentaurus TCAD Training for CMOS Application

Day 1:

Day 2:

Sentaurus TCAD Overview Sentaurus workbench Sentaurus Process 1D & 2D Tecplot SV Sentaurus Structure Editor - Building Meshes Sentaurus Device I-V simulation Inspect

90nm nMOSFET Exercise c-v Device Simulation Breakdown Device Simulation pMOSFET Device Simulation Ligament Introduction SolvNet Resources

.------------------~-~~---.-

t iC

a t 7i

o

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sentaurus tcad training for cmos application (synopsys_2009) _ ocr

Documents