sic mosfet power cycler test results

1

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Accelerated Aging of 4-terminal Device

2 on-state voltage measurements: VDS and VSS

- Use of Kelvin-source (or emitter) becoming more common

- VDS covers MOSFET die (could also be IGBT)

- VSS covers bond-wires

- Die resistance and bond-wire resistance can be calculated

separately

VSS

MOSFET

D

S

G

Bond-w

ire

Aux. S

VDS

VDS Measurement Circuit [17] Instrumentation Amplifier

Schematic for online VSS and VDS measurements First Prototype Measurement Board

2

CORPE

Full 6-pack Cycler

Measurement Board Version 2

- Power cycling on 6 MOSFETs simultaneously (six-pack module)

- Die resistance recorded

- Bond-wire resistance recorded

- µΩ changes can be recorded

Measurement board output during 2-second current pulse on 20A MOSFET

3

CORPE

Full 6-pack Cycler


- Power cycling on 6 MOSFETs simultaneously (six-pack module)

- Die resistance recorded

- Bond-wire resistance recorded

- µΩ changes can be recorded

Measurement board output during 2-second current pulse on 20A MOSFET

4

CORPE

Power Cycling Results – Bond-wires

Power Cycling Test of 20A SiC MOSFETs

- Several step increases – cracks forming

- MOSFET 5 first to fail after period of increased gradient

- MOSFET 2 has first step increase

5

CORPE






6

CORPE






7

CORPE

Power Cycling Results – Die Resistance


- Resistance of die initially decreases – possibly VTH shift

8

CORPE

Power Cycling Results – Die Resistance


- Resistance of die initially decreases – possibly VTH shift

9

CORPE


More parameters: more information on degradation

- Bond-Resistance

- Die Resistance

- Threshold Voltage

- Thermal Resistance

- Reduce required testing time and have more targeted post-

failure analysis

- Provide clear information on the formation of failures during

aging tests

- Help accurate failure prediction

- Contact: [email protected]

mailto:[email protected]





sic mosfet power cycler test results

Engineering