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For the Excellence in System DesignSiC Schottky Barrier Diode

Features • Low conduction loss • Zero reverse recovery • Temperature independent switching • High surge current capability • High ruggedness • High junction temperature 175oC

Target Application

• PV Inverter• ESS / BMS

• Server Power• Telecom Power• PC Power

• EV Charging Pile• UPS• Industrial Motor

• Home Appliance• Digital TV

Green EnergyPower System Industrial Consumer

Top Metal

P+

N- Epi Layer

Buffer Layer

Back Metal

N+ SiC Substrate

Ohmic contact

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TEL � �� �� � � �� � � � FAX � �� �� � � �� � � � MAIL � � �� �� � � � � �� �  � ­ ���

SiC SBD Line-Up

Performance

Specification TO-220AC

Series Current(A) Product ID Vf Typ.

(V)IFSM

(A)CJ

(pF)

SiC SBD650V

SiC SBD1200V

4681012162058101520

1.51.51.51.51.51.51.51.51.51.51.51.5

61319273448631327375978

20283244527288406476

120152

PCDP0465G1PCDP0665G1PCDP0865G1PCDP1065G1PCDP1265G1PCDP1665G1PCDP2065G1PCDP05120G1PCDP08120G1PCDP10120G1PCDP15120G1PCDP20120G1

Temperature coefficientSiC Diode 650V / 10A

SiC Diode 650V / 10A

800W CCM Boost PFC, Vin = 110Vac/60Hz, Vout = 400V, Fsw = 65kHzSystem Evaluation:

Boost Pre- charge diode

Boost diodeDUT

Load

NTC

VF Temperature Variation [%](25c to 125c)

Forw

ard

Cur

rent

, IF [

A]

PTC

Forw

ard

Cur

rent

, IF [

A]

Forward Voltage, VF [V]

Output Power, POUT [W]

Sys

tem

Effi

cien

cy, η

[%]