silicon photo diode

BPW21Rwww.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Nov-11 1 Document Number: 81519

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Silicon Photodiode

DESCRIPTIONBPW21R is a planar Silicon PN photodiode in a hermeticallysealed short TO-5 case, especially designed for highprecision linear applications.

Due to its extremely high dark resistance, the short circuitphotocurrent is linear over seven decades of illuminationlevel.

On the other hand, there is a strictly logarithmic correlationbetween open circuit voltage and illumination over the samerange.

The device is equipped with a flat glass window with built incolor correction filter, giving an approximation to thespectral response of the human eye.

FEATURES Package type: leaded

Package form: TO-5

Dimensions (in mm): 8.13

Radiant sensitive area (in mm2): 7.5

High photo sensitivity

Adapted to human eye responsivity

Angle of half sensitivity: = 50 Hermetically sealed package

Cathode connected to package

Flat glass window

Low dark current

High shunt resistance

High linearity

Compliant to RoHS Directive 2002/95/EC and inaccordance with WEEE 2002/96/EC

APPLICATIONS Sensor in exposure and color measuring purposes

Note Test condition see table Basic Characteristics

Note MOQ: minimum order quantity

94 8394

PRODUCT SUMMARYCOMPONENT Ira (A) (deg) 0.5 (nm)BPW21R 9 50 420 to 675

ORDERING INFORMATIONORDERING CODE PACKAGING REMARKS PACKAGE FORM

BPW21R Bulk MOQ: 500 pcs, 500 pcs/bulk TO-5

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage VR 10 V

Power dissipation Tamb 50 C PV 300 mWJunction temperature Tj 125 C

Operating temperature range Tamb - 40 to + 125 C

Storage temperature range Tstg - 40 to + 125 C

Soldering temperature t 5 s Tsd 260 CThermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 250 K/W





BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 50 mA VF 1.0 1.3 V

Breakdown voltage IR = 20 A, E = 0 V(BR) 10 V

Reverse dark current VR = 5 V, E = 0 Iro 2 30 nA

Diode capacitanceVR = 0 V, f = 1 MHz, E = 0 CD 1.2 nF

VR = 5 V, f = 1 MHz, E = 0 CD 400 pF

Dark resistance VR = 10 mV RD 38 GOpen circuit voltage EA = 1 klx Vo 280 450 mV

Temperature coefficient of Vo EA = 1 klx TKVo - 2 mV/K

Short circuit current EA = 1 klx Ik 4.5 9 A

Temperature coefficient of IK EA = 1 klx TKIk - 0.05 %/K

Reverse light current EA = 1 klx, VR = 5 V Ira 4.5 9 A

Sensitivity VR = 5 V, EA = 10-2 to 105 lx S 9 nA/Ix

Angle of half sensitivity 50 degWavelength of peak sensitivity p 565 nmRange of spectral bandwidth 0.5 420 to 675 nmRise time VR = 0 V, RL = 1 k, = 660 nm tr 3.1 sFall time VR = 0 V, RL = 1 k, = 660 nm tf 3.0 s

40 60 80 12010020

I-

Rev

erse

Dar

kCu

rrent

(nA)

ro

94 8468

10

101

102

103

104

VR = 5 V

Tamb - Ambient Temperature (C)0 20 40 60 80

0.8

0.9

1.0

1.1

1.3

120

1.2

10094 8738 Tamb - Ambient Temperature

I ra r

el -

R

elat

iveR

ever

se L

ight

Cur

rent





Fig. 3 - Short Circuit Current vs. Illuminance

Fig. 4 - Diode Capacitance vs. Reverse Voltage

Fig. 5 - Relative Spectral Sensitivity vs. Wavelength

Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement

94 8476

10010-2 10-1 101 102 103 104

100

10-1

10-2

10-3

10-4

101

102

105 106

103

EA - Illuminance (lx)

I K - Sh

ort C

ircui

t Cur

rent

(A)

0

400

600

800

1200

1400

1000

200

0.1 101

C-

Dio

deCa

pacit

ance

(pF)

D

100

94 8473

E = 0f = 1 MHz

VR - Reverse Voltage (V)

350 450 550 6500

0.2

0.4

0.6

0.8

1.0

75094 8477

V Eye

- Wavelength (nm)

S ()

rel -

R

elat

ive

Spec

tral S

ensit

ivity

0.4 0.2 0

94 8475

0.6

0.9

0.8

030

10 20

40

50

60

70

800.7

1.0

S-

Rela

tive

Sens

itivity

rel

- An

gula

r Disp

lace

men

t





PACKAGE DIMENSIONS in millimeters

-+

5.08 nom.

8.13

5.9

0.45

- 1

0

.2

0.1

- 0.05+ 0.02

0.1

Chip position

0.19.1

Issue:1; 01.07.96Drawing-No.: 6.511-5002.01-4

specificationsaccording to DINtechnical drawings

(1.65

)

143.

1

96 12181

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silicon photo diode

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