silicon photonics platform for 50g optical … photonics platform for 50g optical interconnects...

SILICON PHOTONICS PLATFORM FOR 50G

OPTICAL INTERCONNECTS MICHAL RAKOWSKI

IMEC, LEUVEN, BELGIUM

Photonics Summit and Workshop 2017

06 Sep 2017 - 07 Sep 2017, San Jose, CA, USA

Photonics Summit and Workshop 2017M. Rakowski

OUTLINE

Short-Reach Optical Interconnect Roadmap

Cu-to-Optical Transition Roadmap

50G NRZ Silicon Photonics Platform

Passive Devices

Modulators

Photodetectors

Optical I/O module

Transceiver Architectures and scalability

TSV integration with Silicon photonics

CMOS-SiPh Transceiver Demonstrators

Conclusion

2


OPTICAL VS. COPPER INTERCONNECTS

TRANSITION

ROADMAP (IMEC)

Link distance

Optical Interconnects

replacing Copper at

increasingly Shorter Reach

Datacenter [5m-10km+]

100G-400G-1.6T+

Backplane [0.5-3m]

8-16-32+ x 50G-100G

Board [5-50cm]

200Gbps+/mm

Package [1cm-10cm]

1Tbps+/mm

Interposer/Chip [1mm-2cm]

10Tbps+/mm Copper

Optical

?1Tbps/mm

100Gbps/mm

10Tbps/mm

I/O Density

100Tbps/mm

10Gbps/mm

Package/ChipLogic Core-Core,

Logic-DRAM

[1mm-5cm]

1cm

Link

bandwidthMMF

SMF

BackplaneBoard-to-board

[0.5m-3m]

Source: LightCounting

10G

50G

25G

1 Mbps

1 Gbps

1 Tbps

1 Pbps

10G

40G

100G

400G

800G

200G

1.6T

3.2T

1G

2.5G

Intra-DatacenterRack-to-Rack

[5m-500m+] Inter-Datacenter[10km+]

Source: LightCounting

BoardLogic Package-to-Package

Logic-DRAM array

[5cm-0.5m]

Source: Intel

6.4T

100G

400G

800G

200G

1.6T

3.2T

6.4T

100G

400G

800G

200G

1.6T

3.2T

6.4T

3


OPTICAL I/O MODULE ROADMAP

1. Unclear if future CMOS nodes will support baud rates beyond 50Gbd

2. PAM-4 acceptable for long links, but NRZ modulation preferred for short, latency sensitive links

At 50Gb/s channel speed, Wavelength Division Multiplexing is essential for module scaling

• 8+ WDM-channels likely required, even if 2x 8-parallel fibers are used per module DWDM

NEED FOR WAVELENGTH DIVISION MULTIPLEXING

Host IC CMOS node 28-20nm 16/14nm iN10 iN7 iN5

Switch I/O Bandwidth 3.2Tb/s 6.4Tb/s 12.8Tb/s 25.6Tb/s 51.2Tb/s

Year of Introduction 2016 2018 2020 2022 2024

Optical I/OModule Bandwidth

100-200Gb/s 400Gb/s 800Gb/s 1.6Tb/s 3.2Tb/s

Channel Data Rate 25Gb/s NRZ50Gb/s PAM-4

50Gb/s NRZ100Gb/s PAM-4




Optical I/O Energy 10pJ/bit <5pJ/bit <2pJ/bit <1pJ/bit <500fJ/bit

WDM ChannelsDuplex fiber, PAM-4

8x fiber (PSM-4), NRZ16x fiber (PSM-8), NRZ

41

421

842

1684

32168

4


SILICON PHOTONIC INTEGRATION

Silicon PICs

Fabrication in CMOS fabs [200mm/300mm]

Large Si/SiO2 refractive index contrast of ~2 [scalable PIC density]

Advanced Si patterning capability [193(i), nanometer scale accuracy]

(Si)Ge epitaxy [photodetectors/modulators]

Low resistance contacts to Si [high-speed optical devices]

Volume scalability [>1M units/year] & Efficiencies of scale [cost]

Wafer-scale 3-D packaging and assembly [TSVs, micro-bumps, ...]

No monolithic integrated optical gain/lasing [need for hybrid solution]

BENEFITS AND DRAWBACKS

Silicon Photonics = Leverage existing CMOS infrastructure for Photonic Integration5


IMEC’S SILICON PHOTONICS PLATFORM50G SILICON PHOTONIC INTEGRATED CIRCUIT TECHNOLOGY

56G Ge Electro-Absorption

Modulator

56Gb/s eye

diagram

56G Silicon Ring

Modulator56Gb/s eye

diagram

8+1-channel DWDM (De-) Multiplexing Filter

Surface-Normal Coupler50G Ge Photodetector50Gb/s eye

diagram

56G Silicon Mach-Zehnder Modulator

Edge Coupler

Co-integration of high performance 50G active and passive blocks in a single platform

Implemented in 200mm SOI (90/130nm) and 300mm (<28nm)

6

50G NRZ SILICON PHOTONICS PLATFORMPASSIVE DEVICES


WAVEGUIDESSUB-MICRON SOI WIRE WAVEGUIDES

Loss vs Bend Radius

nSi~3.45

nSiO2~1.45

450nm

220nm

SiSiO2

-1.84 ( 0.1) dB/cm

-25

-30

-40

-50

-60

spiral length [cm]0 5 10 15 20

Tra

nsm

issio

n [d

B]

-35

-45

-55

10 mm

High index-contrast Si waveguide technology enables

compact photonic circuits (~µm bends)

But, more sensitive to sidewall roughness (propagation

loss ~ 0.1-1dB/cm)

8


Peak Loss vs Bandwidth

FIBER COUPLING INTERFACESSURFACE NORMAL GRATING COUPLERS

Fiber Grating Couplers: <3dB insertion loss over 30nm optical bandwidth to Standard Single Mode Fiber

9


FIBER COUPLING INTERFACESEDGE COUPLERS

Broadband

Relatively insensitive for polarization

Smaller spot size complicate packaging

Additional process steps and stack layers

Wafer-scale testing not straightforward

Si Oxy-Nitride Edge Couplers: <2dB insertion loss over 100nm

to Specialty Fiber (3um Mode Field Diameter)

10


SILICON WAVELENGTH MULTIPLEXING DEVICESRING-BASED DWDM FILTERS

𝑚 ⋅ 𝜆𝑟𝑒𝑠 = 𝐿𝑅𝑇 ⋅ 𝑛𝑒𝑓𝑓

Filter resonance condition

Input Waveguide

8x Drop Waveguides

8x Cascaded Ring Filters

Spectral Response 8-Channel FilterInput Waveguide

Drop Waveguide

Ring

Waveguide

lres

11


8+1-channel DWDM Demultiplexing Filter

Transmission Spectrum

Polarization diversity scheme

8 channel (de)MUX filter, using cascaded

ring filters

Double-ring filter design with flat-top

response

~3dB insertion loss, ~20dB crosstalk

Collective, low-power thermal tuning

SILICON WAVELENGTH MULTIPLEXING DEVICESRING-BASED DWDM FILTERS

12

50G NRZ SILICON PHOTONICS PLATFORMSILICON MODULATORS


SIPH OPTICAL MODULATOR OPTIONS

Df(V)

Df(-V)

Si Mach-Zehnder Modulator

Tra

nsm

ission

PIN

P1

P0

Applied Voltage

IL

ER

Vp

Vpp

ER

IL

Modulation

efficiency (pm/V)

λr

P0

P1

Optically broadband

Thermally robust

Large device (L~1mm)

Large dynamic power

L Dl(V)

Si Ring Modulator

2R

Optically narrowband (<1nm)

Thermally sensitive (<1K)

Compact device (R~5mm)

Low dynamic power (1Vpp)

Ge Si Electro-Absorption

Modulator

L

Optical Bandwidth (<30nm)

Thermally insensitive (<30K)

Compact device (L~60mm)

Low dynamic power (2Vpp)

~IL

~ER

14


SILICON MACH-ZEHNDER MODULATORTRAVELING-WAVE MZM DESIGN AND PERFORMANCE

50Gb/s Eye diagram with

2.5Vpp

Input Output

Heaters

P G S G S G P

Phase

shifter

Parameter Typ. Value

Operation Wavelength 1550nm

EO Bandwidth (S21) f3dB 27GHz (at -1V)

Optical Loss 8.2 dB/cm (at 0V)

Modulation efficiency V𝜋 11 V

Optical Insertion Loss IL -2dB (excludes bias-included loss)

Dynamic Extinction Ratio ER ~2.2dB (for 2.5Vpp single-ended drive)

Phase-Shifter Length L 1.5mm50Gb/s Eye diagram with

2.5Vpp

-20

-15

-10

-5

0

0 10 20 30 40 50

No

rmal

ize

d S

21

[dB

]

Frequency [GHz]

S21 @ 0V S21 @ 1VElectro-optic S21 response

g w g

Ground Signal Ground

Trench

width

Waveguide

width

BOX

Substrate

P+ PBODY P N N+NBODY

Body

width

15


ER for

1V (dB)

IL (dB)

Modulation efficiency

(pm/V)

Transmission spectra

wavelength (nm)

Po

ut (d

Bm

)SILICON RING MODULATORDESIGN SPECIFICATIONS

Targeted Specifications

Ring radius 5 um

Quality Factor 2k-10k

Modulation Efficiency >50 pm/V

Modulation Bandwidth f3dB >40 GHz

Transmitter Penalty (@1Vpp) <6 dB

Heater efficiency >0.2 nm/mW

Heater Control RF Signal Ground

Light in Light out

10mm

Tungsten Heater

Microscope

Image

16


SILICON RING MODULATOR

1552.8 1553.0 1553.2 1553.4 1553.6 1553.8-65

-60

-55

-50

-45

-40

-35

-30

-25

Tra

ns

mis

sio

n [

dB

m]

Wavelength [nm]

-2.0V

-1.5V

-1.0V

-0.5V

0.0V

0.5V

Q-factor

Voltage

swing

(-1V to

0.5V)

Modulation

efficiency (pm/V)

ER at min TP

(dB)

IL at min TP

(dB)

Min Transmitter

Penalty (dB)

*3dB BW

(GHz)

Heating

efficiency

(nm/mW)

3200 1.5 45 2.6 6.0 11 47 0.284

1550 1555 1560 1565-35

-30

-25

-20

-15

-10

-5

0

5

Tra

ns

mis

sio

n [

dB

m]

Wavelength [nm]

0 V

0.25 V

0.5 V

0.75 V

1 V

1.25 V

1.5 V

1.75 V

0 10 20 30 40 50-18

-15

-12

-9

-6

-3

0

Re

lati

ve

ele

ctr

o-o

pti

ca

l S

21

[d

B]

Frequency [GHz]

1552.85 nm

1552.95 nm

1553.05 nm

1553.15 nm

S11-measurement

*Modulation bandwidth reported at wavelength with maximum S21 magnitude

1552.8 1553.0 1553.2 1553.4 1553.60

5

10

15

20

25

ER

/IL

/TP

[d

B]

Wavelength [nm]

Extinction ratio

Insertion loss

Tx penalty

Electro-Optic Response (DC) ER, IL and TP Electro-Optic Response (RF) Thermo-Optic Response (DC)

TYPICAL PERFORMANCE

50G Ring Modulator with Integrated Heater

17


SILICON RING MODULATOR ELECTRICAL MODEL

Bias Cj (fF) RS (Ohm) Cox (fF) RSi (Ohm) Cm (fF)

Fitted value 0V 24 68 49 1100 6.5

S11-measurement S11-fitting

Cm: capacitance of metal pads

COX, RSi: substrate capacitance and resistance

Cj, Rs: capacitance and resistance of RM

S11-measurement S11-fitting

Real

Imag

Ele

ctri

cal S1

1Frequency [GHz]

Input

PortRSRSi

COX

Cm

Electrical equivalent circuit model

Cj

MEASURED S11 VS. ELECTRICAL MODEL FITTING

Fitted parameters

18


Ring

modulator

type

Q-factorModulation

efficiency (pm)

Transmitter Penalty

for 1.5Vpp swing (dB)

Measured f3dB

(GHz)

High-Q 9900 45.2 6.9 16.2

Medium-Q 3500 61.8 10.1 35

Low-Q 2200 67.6 11 47

Trade-off betweenTransmitter Penalty and Modulation

Bandwidth.

f3db =

47GHz

SILICON RING MODULATOR BANDWIDTH VS. TRANSMITTER PENALTYDETERMINED BY RESONANCE QUALITY FACTOR

2

_3

2

_3

2

3

111

QdBRCdBdB fff

RCf RCdB p2/1_3

rQdBf p2/1_3

(cavity photon lifetime)

cQr pl 2/

Modulation Bandwidth f3dB

19


SILICON RING MODULATOR 50-56GB/S NRZ EYE DIAGRAMS

50/56G MUX, PRBS 2e31-1, laser power=10dBm

Measured with 50Ohm terminated probe

Oscilloscope optical module with 40GHz bandwidth

50Gb/s, 1VppVbias= 0V, ER=4.7dB, SNR=5.2

50Gb/s, 2.5VppVbias= 0V, ER=5.4dB, SNR=6.8

50-56Gb/s open eye diagrams from 1Vpp drive swing

56Gb/s, 1.5VppVbias= -0.25V, ER=4.1dB, SNR=5.2, 1544.67

56Gb/s, 1VppVbias= 0V, ER=4.5dB, SNR=4.7, 1544.67

20


GESI ELECTRO-ABSORPTION MODULATOR

Anode

Cathode

Light

in

Light

out

Top view

Optical absorption vs. wavelength and bias voltage

Simulated E-field at 0V Simulated E-field at -2V

Reverse bias p-i-n GeSi diode 11kV/cm at ON state 60kV/cm at OFF state

Si

Ge(Si)

n i p

N+ Si

contactP+ Si

contact

Device cross section, perpendicular to light propagation

Doping Profile

WORKING PRINCIPLE & DESIGN

Franz-Keldish effect: modulate optical absorption coefficient in

Ge(Si) by applied electric field

Ultra-fast effect (~ps), RC limited

Implemented by reverse-biased p-i-n diode in GeSi waveguide

21


GESI EAM STATIC MEASUREMENTSTYPICAL EXTINCTION RATIO, INSERTION LOSS, TRANSMITTER PENALTY

Static modulator response spectrum

(ER and IL) vs drive swing

Optimum operation point close to 1550nm for GeSi EAM (where ER=4.6dB, IL=4.2dB for 2Vpp)

Absirbtion vs wavelength

GeSi – device (Si = 0.74%)

LPP = 𝑷𝑶𝒖𝒕 𝟏 −𝑷𝑶𝒖𝒕(𝟎)

𝟐 𝑷𝒊𝒏

Link Power Penalty (LPP) spectrum

vs drive swing

ER = 5.3dB and IL =5.2dB

(2Vpp swing at 1555nm)

Absorption coefficient increases with applied field

Sub-picosecond effect

22


GESI EAM STATIC MEASUREMENTS

Operation wavelength shifts with temperature to longer wavelength (0.82nm/K)

GeSi EAM device is not temperature insensitive beyond ~30K variations

TEMPERATURE DEPENDENCE

23


GESI EAM DYNAMIC MEASUREMENTSSMALL SIGNAL RF PERFORMANCE

Electro-Optic S21 response

Electrical S11 response

3dB bandwidth is beyond 50GHz under reverse bias above -1V

The extracted R, C from EAMs indicate the device speed is RC limited

The GeSi EAM represents a very small capacitive load of Cj < 15fF

Electrical/Optical response strongly depends on bias voltage and optical

power

24


GESI EAM EYE DIAGRAM MEASUREMENTS

1.5Vpp, ER = 2.55dB 2.0Vpp, ER = 3.29dB 2.5Vpp, ER = 3.89dB

56GB/S NRZ @1550NM

Open eye diagram at 56Gb/s NRZ-OOK data rate

PRBS data stream, length 231-1

Measured with 50Ohm terminated, 50GHz RF probe

25

50G NRZ SILICON PHOTONICS PLATFORMGE PHOTODIODE


GE WAVEGUIDE PHOTODETECTORGE P-I-N DIODE

Responsivity: > 0.85A/W at -1V

O/E 3dB BW > 50GHz

Dark current: 10nA at -2V

Capacitance < 20fF

56Gb/s, -2V, 1565nmElectro-optical S21 response

Frequency (GHz)

“VPIN” GePD

27


IMEC’S SILICON PHOTONICS PROTOTYPING OFFERING

28

BUILD YOUR OWN PROTOTYPE IN IMEC’S OPEN PLATFORM TECHNOLOGY!

Accessing imec’s 200mm Si Photonics Platform (iSiPP50G)

Both MPW and Fully Dedicated Runs

Silicon Validated PDK v2.2.0 is available

Supported by various EDA tools

Interested? Get in touch! MPW http://www.europractice-ic.com/, Dedicated: [email protected]

http://www.europractice-ic.com/

OPTICAL I/O MODULE

ARCHITECTURE AND SCALING

OPTIONS


PROPOSED OPTICAL I/O MODULE ARCHITECTURE

30

HYBRID ASSEMBLY ON SILICON PHOTONICS INTERPOSER

TSV

MOD PD (de)MUXLC FC

DFB LD Array

CMOSFiber Array Coupler

Si Photonics Interposer

DRV TIA CTRL

Cross Section Schematic

• DFB-LD = Distributed Feedback Laser Diode

• LC = Laser Coupler

• DRV = Modulator Driver

• TIA = Trans-Impedance Amplifier

• CTRL = Control Circuit

• MOD = Electro-optic Modulator

• PD = Photodetector

• TSV = Through-Silicon Via

• MUX = Wavelength Multiplexer

• FC = Fiber Coupler

Optical Module

In-Package Optical Module Integration (400Gb/s+)

Switch ASIC/FPGA

package


OPTICAL TRANSCEIVER SCALING

Faster Channels

25G

50G

100G

4l8l

16l1core

8core

16core

1-bit 1l

2-bit

4-bitPAM-16 (LightWire/Luxtera)

10G

J. Sakaguchi, et al, "19-core fiber transmission of 19x100x172-Gb/s SDM-WDM-

PDM-QPSK signals at 305Tb/s," OFC2012, PDP5C.1.

Focus for very-short reach

interconnects:

Faster and More Channels

More bits per Symbol

Amplitude: PAM-X

Phase and Amplitude: DP-QPSK, QAM-X, ...

More Channels

Parallel (Single-Mode) Fiber [PSM]

Multi-Core Fiber, Spatial Division Multiplexing [SDM]

Wavelength Division Multiplexing [WDM]

31


OPTICAL CHANNEL SCALING

32

4-CHANNEL TRANSCEIVER EXAMPLES

PSM-4

Parallel Single Mode Fiber

CWDM-4

Coarse Wavelength Division Multiplexing

Channel Modulation

100GbE 4x25Gb/s NRZ

200GbE 4x50Gb/s PAM-4


SDM-8

Spatial Division Multiplexing

DWDM-8

Dense Wavelength Division Multiplexing

OPTICAL CHANNEL SCALING

33

8-CHANNEL TRANSCEIVER OBJECTIVE

Channel Modulation

400GbE8x50Gb/s NRZ or PAM-4

4x100Gb/s PAM-4

800GbE16x50Gb/s NRZ

8x100Gb/s PAM-4

TSV INTEGRATION WITH

SILICON PHOTONICS


TSV INTEGRATION

10x100 TSV integration

Pitch 20-60µm

WITH SILICON PHOTONICS

Si Photonics interposer on

carrier wafer

TSVMOD PD (de)MUXLC FC

CMOS

Fiber Array CouplerSi Photonics Interposer

DRV TIA CTRL

100µm

100µm

10µm

TSV

BSRDL

100µm

35

BSRDL and passivation


TSVHIGH SPEED PERFORMANCE

Inse

rti

on

lo

ss (

dB

)

Very low RF losses for TSV at 50GHz

L

100µm

100µm

High-signal integrity at 50Gb/s NRZ

L=300µm

L=100µm

L=300µm

L=1000µm

Small Signal (measured) Large Signal (simulated)

36

SIPHTRANSCEIVER DEMONSTRATORS


ULTRA-COMPACT 16X 56GB/S GESI EAM-PD ARRAY

16x 56Gb/s

GeSi EAM

array

16x 56Gb/s

GeSi PD array

1x16 MMI splitter tree

1 input,

16 TX output

16 RX input

100𝜇m pitch

0.7mm

3mm

61-channel Pitch-Reducing Optical Fiber

Array (PROFA, Chiral Photonics)

37um

100um

100x50um GeSi

EAM and PD

Diode: 600nm

wide, 40um long

50um37-channel grid of fiber

grating couplers, 37um

pitchInput

38


PROFA and Packaging by Chiral Photonics

0.7mm

3.0

mm

PACKAGINGPITCH-REDUCING OPTICAL FIBER ARRAY (PROFA)

39


GeSi EAM optical transmission GeSi EAM to GeSi PD Loopback

GeSi EAM driving voltage (peak to peak): 2.5V, 56Gb/s (PRBS31)

Bias GeSi PD: -2.5V

GeSi EAM array Dynamic extinction ratio (ER) in the range of 2.7-3.3dB

GeSi EAM to GeSi PD array SNR in the range of 3.05-3.92

GESI EAM TO GESI PD LOOPBACK TRANSMISSION TEST16 CHANNEL LINK UNIFORMITY ANALYSIS AT 56GB/S NRZ

40


GESI EAM-PD AT 100GB/S First SINGLE-WAVELENGTH 100Gb/s NRZ-OOK modulation demo in Silicon Photonics

Collaboration with100Gb/s Eye Diagrams

(III-V discrete PD)

B2B

500m

SM

F

BER below threshold for FEC

2km

DSM

F 100Gb/s Eye Diagram

for GeSi EAM-to-GeSi PD

41


RING MODULATOR DRIVER IN 28NM CMOSCIRCUIT CONCEPT AND WIRE-BONDED PROTOTYPE

SiPh die with ring modulator array

Wirebond

Fiber in

Polarization

controller

Tunable

Laser

(12dBm)

Fiber out

EDFA (6dB)

Sampling

Oscilloscope

40GHz BW

Optical Filter

-

67GHz - 50Ω GSG probe

PPG + MUX

56 Gb/s

Wirebond

Wire-bonded CMOS-SiPh Prototype

dataEn Cathode Stage

Anode Stage

MP2

MN3

MP3

data

Bond Pad

Bond Pad

Cathode Stage

Anode Stage VDD

VSSEn

AE

drv2

drv1

MP4MP5

Ring

Modulator

Cpad=60fF

Cpad=60fF

MP1

MN1

MN2

65µm

Anode

Cathode

V

t

VDD

-VDD

Differential voltage

swing

Invertor-based Differential Driver Concept

Target load per stage: C=150fF

Target data rate = 50Gb/s (1.1V)

Voltage swing (~1.7 VDD)

Single driver supply

Driver supply:

VDD=1.1V

Ebit = 610 fJ/bit

50Gb/s NRZ

50Gb/s NRZ, PRBS07

42


CONCLUSIONS

Interconnect requirements for high bandwidth density, low-power and low-cost are pushing

optical interconnects to shorter distances

Supporting many modulation schemes & wavelength bands considered for future datacenters

single-mode interconnects

Silicon Photonics for short-reach optical interconnects

50G NRZ optical modulation and detection rates are readily achieved

SiPh active devices can be directly driven by advanced CMOS: low capacitance and low drive voltages

Tight integration with host CMOS ICs using 3-D assembly

Low die cost and volume scalability (Spatial and Wavelength Division Multiplexing)

Main challenges

Low-cost laser array integration on SiPh interposer

Self-aligned fiber array assembly

Thermal stability (passive and active devices) and optical insertion loss

43


ACKNOWLEDGEMENT

This work is supported by

imec’s industry-affiliation R&D program on Optical I/O

EU Funding: FP7-2007/2013 (318178-PLAT4M), H2020-ICT-2015 (688172-STREAMS) and (688510-

TERABOARD)

imec’s Optical I/O and Si Photonics team:P. Verheyen, M. Pantouvaki, B. Snyder, P. De Heyn, G. Lepage, S. Balakrishnan, N. Golshani, J. De Coster, H.

Chen, A. Srinivasan, S. Lardenois, S. Agarwal, P. Absil, J. Van Campenhout and many more

Further information available in these papers:[1] M. Pantouvaki, et al. “56Gb/s Ring Modulator on a 300mm Silicon Photonics Platform”, TH2.4.4, ECOC 2015

[2] A. Srinivasan, et al. “56Gb/s Germanium Waveguide Electro-Absorption Modulator”, J. Lightw. Tech., 2015

[3] M. Pantouvaki, et al. “50Gb/s Silicon Photonics Platform for Short-Reach Optical Interconnects”, OFC 2016

[4] M. Rakowski et al, “A 50Gb/s, 610fJ/bit Hybrid CMOS-Si Photonics Ring-based NRZ-OOK Transmitter ,” OFC 2016

[5] S. Agarwal et al, “Wavelength Locking of a Si Photonic Ring Transmitter using a Dithering-based OMA Stabilizing Feedback Loop ,” OFC 2016

[6] H. Chen et al, “-1 V Bias 56 Gbps Germanium Waveguide p-i-n Photodetector with Silicon Contacts,” OFC 2016

[7] P. De Heyn et al, “Ultra-Dense 16x56Gb/s NRZ GeSi EAM-PD Arrays Coupled to Multicore Fiber for Short-Reach 896Gb/s Optical Links”, OFC 2017

[8] J. Verbist et al, “First Real-Time 100-Gb/s NRZ-OOK Transmission over 2km with a Silicon Photonics, Electro-Absorption Modulator”, OFC 2017

44

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