sinter technology for power modules · sinter technology for power modules high-power applications...
TRANSCRIPT
POWER MODULESSinter Technology for PowerModules
ISSUE 4 ndash MAYJUNE 2009
Also inside this issueOpinion | Market News | PCIM 2009 | Power Semiconductors |Industrial Power | IGBTMOSFET Gate Drivers | Solar Power |Website Locator
p01 Coverqxdp01 Cover 21409 0927 Page 1
[ wwwinfi neoncomhighpower ]
Power Density ndash next Level of Energy efficiencyA complete solution for Commercial Agriculture and Construction Vehicles
As electrification in Commercial Agriculture and Construction Vehicles beco-
mes a standard Infineon offers a complete IGBT module portfolio dedicated to
these applications The reliability requirements of power switches in terms of
extreme vibration and extended cycling capabilities have been practically imple-
mented Due to new joining techniques optimum thermal impedance and longer
lifetime for the power modules have been achieved
Key features
600V 1200V and 1700V IGBT modules in fullhalf-bridge and chopper confi-
gurations for both AC and switched reluctance electric machines
2 times higher power cycling capability at tvjop=150degC operating temperature
eg 2 mio∆Tj=40K
up to 5 times higher thermal cycling compared to industrial modules
extended lifetime compared to industry standard modules
02_PEE_Issue 4 200902_PEE_Issue 4 2009 21409 1230 Page 1
CONTENTS
Power Electronics Europe Issue 4 2009
3
Editor Achim Scharf
Tel +49 (0)892865 9794
Fax +49 (0)892800 132
Email achimscharfaolcom
Production Editor Elaine Gladwell
Tel +44 (0)1322 380057
Advertisement Administration
Clare Jackson
Tel +44 (0)1732 370345
Fax +44 (0)1732 886149
Circulation Manager Anne Backers
Tel +44 (0)208 647 3133
Fax +44 (0)208 669 8013
INTERNATIONAL SALES OFFICES
Mainland Europe
Victoria Hufmann Norbert Hufmann
Tel +49 911 9397 643 Fax +49 911 9397 6459
Email peehufmanninfo
Armin Wezel
Tel +49 9568 897 097 Fax +49 9568 897 096
Email armineurokom-mediade
UK
Steve Regnier Tim Anstee
Tel +44 (0)1732 366555
email Salesstarmediaservicescouk
Eastern US
Karen C Smith-Kernc
email KarenKCSaolcom
Western US and Canada
Alan A Kernc
Tel +1 717 397 7100
Fax +1 717 397 7800
email AlanKCSaolcom
Italy
Ferruccio Silvera
Tel +39 022 846 716 Email ferrucciosilverait
Taiwan
Prisco Ind Service Corp
Tel 886 2 2322 5266 Fax 886 2 2322 2205
Publisher Ian Atkinson
Tel +44 (0)1732 370346
Fax +44 (0)1732 886149
Email IATKINSONTMIaolcom
wwwpower-magcom
Circulation and subscription Power ElectronicsEurope is available for the following subscriptioncharges Power Electronics Europe annual chargeUKNI pound60 overseas $130 EUR 120 single copiesUKNI pound10 overseas US$32 EUR 25 ContactTechmedia International Ltd Kildonan St MaryrsquosRoad Wrotham Kent TN15 7AP Great BritainTel +44 (0)1732 886495 Fax +44 (0)1732886149 Refunds on cancelled subscriptions willonly be provided at the Publisherrsquos discretion unlessspecifically guaranteed within the terms ofsubscription offer
Editorial information should be sent to The EditorPower Electronics Europe PO Box 340131 80098Munich Germany
The contents of Power Electronics Europe aresubject to reproduction in information storage andretrieval systems All rights reserved No part of thispublication may be reproduced in any form or by anymeans electronic or mechanical includingphotocopying recording or any information storageor retrieval system without the express prior writtenconsent of the publisherOrigination Elaine GladwellPrinted by Wyndeham Heron LimitedISSN 1748-3530
PAGE 20
PCIM 2009 - The Whole World ofPower ElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500
visitors expected quite similar to the year 2008 event Following is an overview on
interesting exhibits in company order
PAGE 26
Next Generation of Power MOSFETsNexFET technology is a new generation of MOSFETs for power applications with
its roots in a laterally diffused MOS (LDMOS) device used successfully for RF
signal amplifications The RF heritage provides minimum internal capacitances
and the vertical current flow offers a high-current density without gate
de-biasing issues By using NexFET switches a converterrsquos efficiency can be
significantly improved Jacek Korec and Shuming Xu Power Stage Group
Texas Instruments USA
PAGE 30
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching
frequencies between 4 and 8kHz Today however more and more applications
require frequencies of 10kHz and higher New power modules can now fill that
gap Andreas Johannsen Product Marketing Manager Industrial Products
Vincotech UnterhachingMunich Germany
PAGE 32
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system
component In the case of the gate drive module the cost performance ratio
strongly influences the make-or-buy decision for that small yet crucial building
block Continuous advances in monolithic integration as well as high voltage
transformer technology have now made it possible to combine advanced gate
drive functions and high output power density at low cost Sascha Pawel and
Wolfgang Ademmer CT-Concept Technologie AG Switzerland
PAGE 35
Improving the Efficiency of PFC StagesUsing Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power
factor correction (PFC) techniques which further improve efficiency The
interleaved boundary conduction mode (BCM) PFC approach is a good alternative
to non-interleaved continuous conduction mode (CCM) PFC method for input
power levels from 300W up to and over 1000W Jon Harper Market
Development Manager Power Conversion amp Industrial Systems Fairchild
Semiconductor Europe
PAGE 41
Website Product Locator
Sinter Technology forPower ModulesHigh-power applications such as automotive windsolar and standard industrial drives require powermodules which fulfil the demand for high reliabilitythermal and electrical ruggedness These demands aremet by deploying state-of-the-art packagingtechnologies such as solder-free pressure and springcontacts but also sinter technology Silver sintertechnology has been used to connect chips tosubstrates since 1994 Even back then the propertiesof sintered silver bonding layers and the benefits theyboast in terms of reliability were analysed and reportedon within the contexts of numerous internationalcongresses At that time however it turned out thatthis type of bonding technology was not quite readyfor use in large-scale industrial electronics Theengineers in SEMIKRONrsquos New TechnologiesDepartment thus were challenged to develop optimiseand employ this packaging technology Full story onpage 28
Cover supplied by SEMIKRON
COVER STORY
PAGE 6
Market NewsPEE looks at the latest Market News and company
developments
PAGE 10
PCIM 2009 - HigherEfficiency through BetterPower ElectronicsDespite the crisis in the financial sector PCIM 2009from May 11 ndash 14 in Nuremberg looks quite healthywith 260 exhibitors and 6500 visitors expected Theconference will see about 600 delegates PowerElectronics is by far the main part of PCIM 2009since it covers 15 of the total 23 sessions
p03 Contentsqxdp03 Contents 24409 0857 Page 3
semisinfomegmeecom middot wwwmitsubishichipscom
All the power you needFor a better environment
Motor ControlMitsubishi a leading manufacturer of Power Modules offers avariety of products like IGBT Module Intelligent Power Module(IPM) DIPCIB and DIPIPM for a wide range of Industrial MotorControl applications Covering a drive range from 04 kW toseveral 100 kW the RoHS compliant modules with the latest
chip and production technologies ensure the best efficiencyand the highest reliability The easy to use features compactsize and mechanical compatibility with previous generationsmake the offered products more attractive on the market
Please visit us PCIM 2009 Hall 12 Stand 421
04_PEE_Issue 4 200904_PEE_Issue 4 2009 21409 1238 Page 1
OPINION 5
Power Electronics Europe Issue 4 2009
Achim ScharfPEE Editor
A suitablequote as alead in to
the editorsopinion
Achim ScharfPEE Editor
The demand for low switching loss low conduction loss andhigh temperature devices has been the driving force oftechnology development in power semiconductors In recentyears SiC (silicon carbide) based diodes have beenintroduced to the market since the year 2001 as discretedevices in standard TO packages These new diodes do havesuperior performance compared to Si-based devices mainlywith respect to switching losses and thermal performanceand are well established in up to 600V hard switchingapplications in high end power supplies According to marketresearcher Yole Developpement SiC business is nowramping up with an estimated 2008 market size of about$22M at device level mainly due to the SiC Schottky barrierdiode (SBD) business Leading SiC device makers such asCree or Infineon are sharing the market with that product butnew entrants (Mitsubishi Electric Rohm Denso Fuji HitachiSTMicroelectronics) are challenging them developing newproducts and related technologies But the lsquoHoly Grailrsquo now isto get a reliable and affordable SiC switch MOSFET is themost studied device but BJT and JFET are exhibiting verypromising results and some start-ups (SemiSouth TranSiCGeneSiC) are proposing very pertinent demo products Theapplications that shape this market are currently in the 600 to1200V range and in the 6 to 20A maximum rangeThe first commercially available high power module
containing SiC Schottky diodes is a 600A 1200VPrimePACK2 IGBT power module (FF600R12IS4F) fromInfineon TechnologiesThe 1200V SiC diodes used are bare 15A Schottky
diodes The required current rating is achieved by parallelingof multiple diode chips which is easily possible due topositive temperature coefficient of these devices Due tothe reduction of turn-on losses with SiC freewheelingdiodes the efficiency or the output power of convertersystems can increase This is very attractive for applicationswhich treat efficiency as first priority (eg solar application)But efficiency is not the only benefit when using SiCfreewheeling diodes With decreased turn-on losses theswitching frequency can also increase This leads to thepossibility of choosing a much smaller output filter andthus lower system volume and cost But the performanceof Si based MOSFETs is quickly decreasing when theblocking voltage of the switch is getting higher than 1000VIGBT is a good choice for switches with blocking voltagegt1000V But due to the tail current during switching offswitching losses have certain physical limits The desire fora faster switch with low conduction loss has driven thedevelopment of a new switch based on SiC material theSiC based junction field-effect transistor (JFET) which is
implemented byInfineon now in an H-bridge power moduleFrom the calculated
results and comparisonbetween Si and SiCthe advantages of SiCbased devices can beobserved immediatelyThe utilisation of SiCdiode or SiC JFET candecrease the switchinglosses dramatically The configuration of IGBT together withSiC diode as freewheeling diodes combines the conductionperformance of IGBT and the ultra-low reverse recoverylosses of SiC Schottky diodes Even lower switching lossescan be achieved with SiC JFET Due to the physical propertyof a unipolar component the conduction loss of JFET ishowever slightly higher than IGBTs (trade-off between chiparea and cost) According to the switching frequency or therequirements from application one can choose betweenthese different configurations The benefits of utilising SiCdevices include with the same converter design theefficiency of whole system can increase smaller heatsink orpassive cooling systems can be used with the same thermaldesign the output power and power density of the invertersystem can increase and by increasing the switchingfrequency the size of output filter and thus system cost canbe reduced First applications which can benefit from theseadvantages are those which need high efficiency (forexample solar converter) or contain an output filter (forexample medical equipment or UPS) In the long run andmainly depending on the cost and diameter development ofsilicon carbide base material it is believed that silicon carbideand perhaps gallium nitride (GaN) based powersemiconductors will become the next generation of powerdevicesAll these factors are explained and described in detail by
the first keynote at PCIM 2009 the Best Paper of PCIM 2009and last but not least by the speakers of our Special SessionlsquoWide Bandgap Material and Devicesrsquo on Wednesday May13 1000 ndash 1200 in Room Paris More details in our PCIM2009 preview on the following pagesHope to meet you at PCIM 2009 in general at our booth
12-544 in particular and of course on May 13 from 1000 ndash1200 in Room Paris
Achim ScharfPEE Editor
New Power Devices Lift Off
p05 Opinionqxdp05 Opinion 21409 0934 Page 5
6 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Environmental regulations andnew limits on fuel consumptionand carbon emissions mean thatevery subsystem in a motorvehicle needs to consume lessenergy while continuing todeliver the same or betterperformance This calls for thedevelopment of new breeds ofgenerators starter-generatorsengine management systems air-conditioning systems and powersteering for example Powersemiconductors play animportant role in meetingautomotive energy-saving targetsThe collaboration between
the companies has two keyaspects First Bosch is to
license from Infineon certainmanufacturing processes forpower semiconductors ndashspecifically for low-voltagepower MOSFETs ndash along withthe requisite manufacturingtechnologies Secondly parallelto Boschrsquos own semiconductormanufacturing in ReutlingenInfineon will producecomponents developed on thebasis of these processes andwill supply Bosch with thesecomponents Going forward thetwo companies will also workjointly on the development ofenabling technologies for theproduction of powersemiconductors By working
with Bosch Infineon is not justexpanding its share of thesemiconductor market in theautomotive segment it will alsobe Boschrsquos preferred supplier ofpower semiconductors ldquoWe arethe world leader in powersemiconductors and havecarved out a significant andsustainable lead in this field oftechnologyrdquo said Peter Bauerspokesman for InfineonTechnologies AGrsquos ManagementBoard ldquoBesides setting newstandards in powersemiconductors a market thatwill grow in the long-term thiscollaboration will put the supplyof Bosch power semiconductors
on a much broader footingrdquoInfineon and Bosch havealready been working togetherfor many years and Infineonhas received the Bosch SupplierAward on four separateoccasions ldquoIn particular thiscollaboration will enable us toexpand our supply portfolio fornew drive technologies inautomobiles including hybridand purely electrical drivesystemsldquo added VolkmarDenner Boschrsquos Board ofManagement memberresponsible for automotiveelectronics
wwwinfineoncomautomotive
Swiss CT-Concept TechnologieAG the market leader in IGBT gatedrive units has reorganised itsstructure in order to support futuregrowth The newly formed CT-Concept Holding AG will own theIPR and thus all forms of driverlicensing and cooperation CT-Concept Technologie AG willcontinue to act as the operationaldivision covering developmentproduction logistics sales andmarketingAfter presiding over more than 22
years of successful business growththe founder and chairman ofCONCEPT Heinz Ruumledi is taking astep back from active involvementand will continue as CEO of CT-Concept Holding AG The board ofdirectors has named WolfgangAdemmer as the new CEO ofCT-Concept Technologie AGAdemmer 41 was Senior Directorat Infineon Technologies AGresponsible for power electronics forhybrid vehicle and white goods
since 2005 Prior to this position hedirected and handled the IGBTpower module business at eupecGmbH as Vice President Sales ampMarketing establishing a solution-oriented strategy to cope withmarkettrends including a business planfor IGBT drivers ldquoKnowing CONCEPTfor more than ten years Irsquomexcited about their potential tocreate further success in a healthymarket Stimulated by themacroeconomic demand for moreelectricity the market for mediumand high-power convertersolutions will grow steadily unlikethe purely end-consumer drivenmarkets We will help to createefficient and reliable solutions in allmedium and high-powerapplications with an emphasis on acostperformance ratio thatcompetes with in-housedevelopmentsrdquo Ademmer stated
wwwIGBT-Drivercom
Infineon and Bosch Collaboratein Power Semiconductors
Wolfgang Ademmer (left) has been appointed as CT-Concept Technologiersquos CEO whileFounder Heinz Ruumledi will continue as CEO of CT-Concept Holding
New CEO at CT-ConceptTechnologie
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 6
07_PEE_Issue 4 200907_PEE_Issue 4 2009 21409 1239 Page 1
Although the PV marketdoubled in 2008 in MW termsa contraction in shipments isanticipated in 2009 This willbe caused by the sudden drop-off in demand from Spainwith its newly implemented500MW cap This is likely toresult in a shortfall of some15 to 2GW in 2009 Althoughthis will in part be counter-balanced by growth in Italyand Eastern Europe thedramatic decline of theSpanish market will lead to an
overall drop in worldwideshipmentsldquoDespite credit issues most
major PV markets look healthyand are showing promise ofsignificant growth Howevereven if their countriesrsquo solarcapacities grow at the highlevels they saw in 2008 theycannot make up for theunprecedented contractionthat the Spanish market willsee this yearrdquo Analyst SamWilkinson commented ldquoManyanalysts are now predicting a
decline in PV module revenuesthis year IMS Researchhaving analysed the likelyperformance of individualcountries believes that MWshipments will also be lowerrdquoIn spite of this underlying
demand for PV remains veryhealthy long-term double-digit annual growth rates canbe expected The market islikely to see dramatic changesin the next few years with theemergence of newtechnologies such as micro-
inverters and the developmentof new and attractive regionalmarkets such as the US whichto date has made up a lowproportion of the overall globalmarketDifficulties in obtaining
financing will restrain USmarket growth this yearHowever in the medium-termit is anticipated to becomeone of the largest markets forPV
wwwimsresearchcom
PVMarket to Contract in 2009
8 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Mitsubishi Electric Corporation is the firstcompany in Japan which has received theInternational Railway Industry Standard (IRIS)certification in March 2009Mitsubishi Electric Corporation Power
Device Works in Fukuoka in Kumamoto andSun-A factory in Nijo have been successfullyaudited their research production andtesting facility of semiconductorcomponents Mitsubishi Electric Europe BVoffers a wide range of HV-IGBT andIntelligent Power Modules ShoichiNakagawa (Division Manager SemiconductorEuropean Business Group) appreciates thecertification as a proof of Mitsubishirsquosposition in the development and productionof semiconductor componentsThe IRIS quality standard is defined by the
UNIFE the European association for therailway supply industry The IRIS standardcovers project management (from designdevelopment to after sales services)management of tender bids changemanagement and also reliabilitymaintenance and safety levels of productsIRIS an extension of ISO 9001 is unique to the railway industry and has been widely asked for by all large railway manufacturers such as Alstom Bombardiertransportation Siemens and Ansaldobreda Mitsubishi has more than 40 years experience in developing and producing power semiconductors It has beensuccessfully directed the development of power semiconductor devices starting from current controlled GTO and Bipolar Darlington transistor to the first voltagecontrolled IGBT With its constant innovative research and development in this field Mitsubishi Electric has secured its top position
wwwmitsubishichipscom
IRIS Certification for MitsubishiElectric
According to IMS Researchrsquos latest analysis the global PV market is set to contract for the first time in2009 in terms of new installations
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 8
Let there be light
12 ndash 14 May 2009PCIM NurembergHall 12 Stand 408
ABB Switzerland Ltd SemiconductorsTel +41 58 586 1419 wwwabbcomsemiconductors
Power and productivityfor a better worldtrade
Economicallywith ABBsemiconductors
09_PEE_Issue 4 200909_PEE_Issue 4 2009 21409 1409 Page 1
10 PCIM 2009
Issue 4 2009 Power Electronics Europe
ldquoThe power and energy sector hasnever been as important as it is todayand this is leading to promisingopportunities for engineers In anutshell we expect that the greatestpart of renewable energy resourceswill be interconnected to and gothrough at least one stage of powerelectronic conversion In this contextthere are three essential topics whichshould be at the forefront of ourminds namely lsquoefficiencyrsquo lsquoreliabilityrsquoand lsquocostsrsquordquo explains Prof Alfred RuferGeneral Conference Director PCIMEuropeHaving introduced the first day of
the conference in our April issue (seepages 18 ndash 23) we now cover theremaining program of the powerelectronics sessionsAs with the first day the second
conference day starts with a keynoteChristian Gerster headingBombardier transportationslsquoCompetence center High-PowerPropulsionrsquo in Zurich will give this
keynote on May 13 845 ndash 930 inthe Room Paris Current trends inrailway traction technology areaddressing objectives in three areasCost size and weight reductionenergy efficiency increase andenabling new functions Thepresentation will give an overview ofthese trends explaining the technicalconcepts used and showing variousexamples of recent developmentsAlso in Room Paris (1000 ndash
1200) PEErsquos Special Session lsquoWideBandgap Materials and Devicesrsquofeaturing papers from CreeInternational Rectifier InfineonTechnologies and Mitsubishi Electricwill be held after this keynote (seesidebar)
Innovative devices andcomponentsThe session lsquoInnovative Devices
and Componentsrsquo takes place inRoom London (1000 ndash 1200)
Hans-Guumlnter Eckel University ofRostock (Germany) will talk about thelsquoPotential of Reverse-ConductingIGBTs in Voltage Source InvertersrsquoReverse Conducting IGBTs integratethe functionality of the IGBT and thefree-wheeling diode into one chipThis reduces the current density in theIGBT mode and especially in thediode mode Therefore the outputcurrent of the inverter can beincreased This paper analyses howthe performance improvementdepends on the applicationconditions With RC-IGBT the outputpower of the inverter can beincreased from a few percent to morethan a factor of 2
Philippe Roussel YoleDeveloppement (France) willexamine the lsquoMarket opportunities ofSiC high-voltage devices in the railtransportation fieldrsquo Train makers haveperceived the Silicon Carbide (SiC)electronics as a highly valuabletechnology for their next-gen power
products However the current SiCindustry is focusing on the 600-1200V range applications to benefitfrom the huge potential market size33 65 and even 10kV+ havealready been demonstrated andtransportation industry is nowexpecting to find commercial productsin the very near future
Robin Kelley SemiSouth (USA)
will present an lsquoOptimized Gate Driverfor Enhancement-mode SiC JFETrsquo Thefirst normally-off SiC VJFET has beenused to replace MOSFETsIGBTs in avariety of applications As device
Higher Efficiency throughBetter Power Electronics
Itrsquos time again for PCIM Europe the leading European event for power electronics
ldquoThe power and energy sector has neverbeen as important as it is today and thisis leading to promising opportunities forengineersldquo says Alfred Rufer GeneralConference Director PCIM Europe
Despite the crisis in the financial sector PCIM 2009 from May 11 ndash 14 inNuremberg looks quite healthy with 260 exhibitors and 6500 visitors expectedThe conference will see about 600 delegates Power Electronics is by far themain part of PCIM 2009 since it covers 15 of the total 23 sessions
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 10
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
[ wwwinfi neoncomhighpower ]
Power Density ndash next Level of Energy efficiencyA complete solution for Commercial Agriculture and Construction Vehicles
As electrification in Commercial Agriculture and Construction Vehicles beco-
mes a standard Infineon offers a complete IGBT module portfolio dedicated to
these applications The reliability requirements of power switches in terms of
extreme vibration and extended cycling capabilities have been practically imple-
mented Due to new joining techniques optimum thermal impedance and longer
lifetime for the power modules have been achieved
Key features
600V 1200V and 1700V IGBT modules in fullhalf-bridge and chopper confi-
gurations for both AC and switched reluctance electric machines
2 times higher power cycling capability at tvjop=150degC operating temperature
eg 2 mio∆Tj=40K
up to 5 times higher thermal cycling compared to industrial modules
extended lifetime compared to industry standard modules
02_PEE_Issue 4 200902_PEE_Issue 4 2009 21409 1230 Page 1
CONTENTS
Power Electronics Europe Issue 4 2009
3
Editor Achim Scharf
Tel +49 (0)892865 9794
Fax +49 (0)892800 132
Email achimscharfaolcom
Production Editor Elaine Gladwell
Tel +44 (0)1322 380057
Advertisement Administration
Clare Jackson
Tel +44 (0)1732 370345
Fax +44 (0)1732 886149
Circulation Manager Anne Backers
Tel +44 (0)208 647 3133
Fax +44 (0)208 669 8013
INTERNATIONAL SALES OFFICES
Mainland Europe
Victoria Hufmann Norbert Hufmann
Tel +49 911 9397 643 Fax +49 911 9397 6459
Email peehufmanninfo
Armin Wezel
Tel +49 9568 897 097 Fax +49 9568 897 096
Email armineurokom-mediade
UK
Steve Regnier Tim Anstee
Tel +44 (0)1732 366555
email Salesstarmediaservicescouk
Eastern US
Karen C Smith-Kernc
email KarenKCSaolcom
Western US and Canada
Alan A Kernc
Tel +1 717 397 7100
Fax +1 717 397 7800
email AlanKCSaolcom
Italy
Ferruccio Silvera
Tel +39 022 846 716 Email ferrucciosilverait
Taiwan
Prisco Ind Service Corp
Tel 886 2 2322 5266 Fax 886 2 2322 2205
Publisher Ian Atkinson
Tel +44 (0)1732 370346
Fax +44 (0)1732 886149
Email IATKINSONTMIaolcom
wwwpower-magcom
Circulation and subscription Power ElectronicsEurope is available for the following subscriptioncharges Power Electronics Europe annual chargeUKNI pound60 overseas $130 EUR 120 single copiesUKNI pound10 overseas US$32 EUR 25 ContactTechmedia International Ltd Kildonan St MaryrsquosRoad Wrotham Kent TN15 7AP Great BritainTel +44 (0)1732 886495 Fax +44 (0)1732886149 Refunds on cancelled subscriptions willonly be provided at the Publisherrsquos discretion unlessspecifically guaranteed within the terms ofsubscription offer
Editorial information should be sent to The EditorPower Electronics Europe PO Box 340131 80098Munich Germany
The contents of Power Electronics Europe aresubject to reproduction in information storage andretrieval systems All rights reserved No part of thispublication may be reproduced in any form or by anymeans electronic or mechanical includingphotocopying recording or any information storageor retrieval system without the express prior writtenconsent of the publisherOrigination Elaine GladwellPrinted by Wyndeham Heron LimitedISSN 1748-3530
PAGE 20
PCIM 2009 - The Whole World ofPower ElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500
visitors expected quite similar to the year 2008 event Following is an overview on
interesting exhibits in company order
PAGE 26
Next Generation of Power MOSFETsNexFET technology is a new generation of MOSFETs for power applications with
its roots in a laterally diffused MOS (LDMOS) device used successfully for RF
signal amplifications The RF heritage provides minimum internal capacitances
and the vertical current flow offers a high-current density without gate
de-biasing issues By using NexFET switches a converterrsquos efficiency can be
significantly improved Jacek Korec and Shuming Xu Power Stage Group
Texas Instruments USA
PAGE 30
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching
frequencies between 4 and 8kHz Today however more and more applications
require frequencies of 10kHz and higher New power modules can now fill that
gap Andreas Johannsen Product Marketing Manager Industrial Products
Vincotech UnterhachingMunich Germany
PAGE 32
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system
component In the case of the gate drive module the cost performance ratio
strongly influences the make-or-buy decision for that small yet crucial building
block Continuous advances in monolithic integration as well as high voltage
transformer technology have now made it possible to combine advanced gate
drive functions and high output power density at low cost Sascha Pawel and
Wolfgang Ademmer CT-Concept Technologie AG Switzerland
PAGE 35
Improving the Efficiency of PFC StagesUsing Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power
factor correction (PFC) techniques which further improve efficiency The
interleaved boundary conduction mode (BCM) PFC approach is a good alternative
to non-interleaved continuous conduction mode (CCM) PFC method for input
power levels from 300W up to and over 1000W Jon Harper Market
Development Manager Power Conversion amp Industrial Systems Fairchild
Semiconductor Europe
PAGE 41
Website Product Locator
Sinter Technology forPower ModulesHigh-power applications such as automotive windsolar and standard industrial drives require powermodules which fulfil the demand for high reliabilitythermal and electrical ruggedness These demands aremet by deploying state-of-the-art packagingtechnologies such as solder-free pressure and springcontacts but also sinter technology Silver sintertechnology has been used to connect chips tosubstrates since 1994 Even back then the propertiesof sintered silver bonding layers and the benefits theyboast in terms of reliability were analysed and reportedon within the contexts of numerous internationalcongresses At that time however it turned out thatthis type of bonding technology was not quite readyfor use in large-scale industrial electronics Theengineers in SEMIKRONrsquos New TechnologiesDepartment thus were challenged to develop optimiseand employ this packaging technology Full story onpage 28
Cover supplied by SEMIKRON
COVER STORY
PAGE 6
Market NewsPEE looks at the latest Market News and company
developments
PAGE 10
PCIM 2009 - HigherEfficiency through BetterPower ElectronicsDespite the crisis in the financial sector PCIM 2009from May 11 ndash 14 in Nuremberg looks quite healthywith 260 exhibitors and 6500 visitors expected Theconference will see about 600 delegates PowerElectronics is by far the main part of PCIM 2009since it covers 15 of the total 23 sessions
p03 Contentsqxdp03 Contents 24409 0857 Page 3
semisinfomegmeecom middot wwwmitsubishichipscom
All the power you needFor a better environment
Motor ControlMitsubishi a leading manufacturer of Power Modules offers avariety of products like IGBT Module Intelligent Power Module(IPM) DIPCIB and DIPIPM for a wide range of Industrial MotorControl applications Covering a drive range from 04 kW toseveral 100 kW the RoHS compliant modules with the latest
chip and production technologies ensure the best efficiencyand the highest reliability The easy to use features compactsize and mechanical compatibility with previous generationsmake the offered products more attractive on the market
Please visit us PCIM 2009 Hall 12 Stand 421
04_PEE_Issue 4 200904_PEE_Issue 4 2009 21409 1238 Page 1
OPINION 5
Power Electronics Europe Issue 4 2009
Achim ScharfPEE Editor
A suitablequote as alead in to
the editorsopinion
Achim ScharfPEE Editor
The demand for low switching loss low conduction loss andhigh temperature devices has been the driving force oftechnology development in power semiconductors In recentyears SiC (silicon carbide) based diodes have beenintroduced to the market since the year 2001 as discretedevices in standard TO packages These new diodes do havesuperior performance compared to Si-based devices mainlywith respect to switching losses and thermal performanceand are well established in up to 600V hard switchingapplications in high end power supplies According to marketresearcher Yole Developpement SiC business is nowramping up with an estimated 2008 market size of about$22M at device level mainly due to the SiC Schottky barrierdiode (SBD) business Leading SiC device makers such asCree or Infineon are sharing the market with that product butnew entrants (Mitsubishi Electric Rohm Denso Fuji HitachiSTMicroelectronics) are challenging them developing newproducts and related technologies But the lsquoHoly Grailrsquo now isto get a reliable and affordable SiC switch MOSFET is themost studied device but BJT and JFET are exhibiting verypromising results and some start-ups (SemiSouth TranSiCGeneSiC) are proposing very pertinent demo products Theapplications that shape this market are currently in the 600 to1200V range and in the 6 to 20A maximum rangeThe first commercially available high power module
containing SiC Schottky diodes is a 600A 1200VPrimePACK2 IGBT power module (FF600R12IS4F) fromInfineon TechnologiesThe 1200V SiC diodes used are bare 15A Schottky
diodes The required current rating is achieved by parallelingof multiple diode chips which is easily possible due topositive temperature coefficient of these devices Due tothe reduction of turn-on losses with SiC freewheelingdiodes the efficiency or the output power of convertersystems can increase This is very attractive for applicationswhich treat efficiency as first priority (eg solar application)But efficiency is not the only benefit when using SiCfreewheeling diodes With decreased turn-on losses theswitching frequency can also increase This leads to thepossibility of choosing a much smaller output filter andthus lower system volume and cost But the performanceof Si based MOSFETs is quickly decreasing when theblocking voltage of the switch is getting higher than 1000VIGBT is a good choice for switches with blocking voltagegt1000V But due to the tail current during switching offswitching losses have certain physical limits The desire fora faster switch with low conduction loss has driven thedevelopment of a new switch based on SiC material theSiC based junction field-effect transistor (JFET) which is
implemented byInfineon now in an H-bridge power moduleFrom the calculated
results and comparisonbetween Si and SiCthe advantages of SiCbased devices can beobserved immediatelyThe utilisation of SiCdiode or SiC JFET candecrease the switchinglosses dramatically The configuration of IGBT together withSiC diode as freewheeling diodes combines the conductionperformance of IGBT and the ultra-low reverse recoverylosses of SiC Schottky diodes Even lower switching lossescan be achieved with SiC JFET Due to the physical propertyof a unipolar component the conduction loss of JFET ishowever slightly higher than IGBTs (trade-off between chiparea and cost) According to the switching frequency or therequirements from application one can choose betweenthese different configurations The benefits of utilising SiCdevices include with the same converter design theefficiency of whole system can increase smaller heatsink orpassive cooling systems can be used with the same thermaldesign the output power and power density of the invertersystem can increase and by increasing the switchingfrequency the size of output filter and thus system cost canbe reduced First applications which can benefit from theseadvantages are those which need high efficiency (forexample solar converter) or contain an output filter (forexample medical equipment or UPS) In the long run andmainly depending on the cost and diameter development ofsilicon carbide base material it is believed that silicon carbideand perhaps gallium nitride (GaN) based powersemiconductors will become the next generation of powerdevicesAll these factors are explained and described in detail by
the first keynote at PCIM 2009 the Best Paper of PCIM 2009and last but not least by the speakers of our Special SessionlsquoWide Bandgap Material and Devicesrsquo on Wednesday May13 1000 ndash 1200 in Room Paris More details in our PCIM2009 preview on the following pagesHope to meet you at PCIM 2009 in general at our booth
12-544 in particular and of course on May 13 from 1000 ndash1200 in Room Paris
Achim ScharfPEE Editor
New Power Devices Lift Off
p05 Opinionqxdp05 Opinion 21409 0934 Page 5
6 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Environmental regulations andnew limits on fuel consumptionand carbon emissions mean thatevery subsystem in a motorvehicle needs to consume lessenergy while continuing todeliver the same or betterperformance This calls for thedevelopment of new breeds ofgenerators starter-generatorsengine management systems air-conditioning systems and powersteering for example Powersemiconductors play animportant role in meetingautomotive energy-saving targetsThe collaboration between
the companies has two keyaspects First Bosch is to
license from Infineon certainmanufacturing processes forpower semiconductors ndashspecifically for low-voltagepower MOSFETs ndash along withthe requisite manufacturingtechnologies Secondly parallelto Boschrsquos own semiconductormanufacturing in ReutlingenInfineon will producecomponents developed on thebasis of these processes andwill supply Bosch with thesecomponents Going forward thetwo companies will also workjointly on the development ofenabling technologies for theproduction of powersemiconductors By working
with Bosch Infineon is not justexpanding its share of thesemiconductor market in theautomotive segment it will alsobe Boschrsquos preferred supplier ofpower semiconductors ldquoWe arethe world leader in powersemiconductors and havecarved out a significant andsustainable lead in this field oftechnologyrdquo said Peter Bauerspokesman for InfineonTechnologies AGrsquos ManagementBoard ldquoBesides setting newstandards in powersemiconductors a market thatwill grow in the long-term thiscollaboration will put the supplyof Bosch power semiconductors
on a much broader footingrdquoInfineon and Bosch havealready been working togetherfor many years and Infineonhas received the Bosch SupplierAward on four separateoccasions ldquoIn particular thiscollaboration will enable us toexpand our supply portfolio fornew drive technologies inautomobiles including hybridand purely electrical drivesystemsldquo added VolkmarDenner Boschrsquos Board ofManagement memberresponsible for automotiveelectronics
wwwinfineoncomautomotive
Swiss CT-Concept TechnologieAG the market leader in IGBT gatedrive units has reorganised itsstructure in order to support futuregrowth The newly formed CT-Concept Holding AG will own theIPR and thus all forms of driverlicensing and cooperation CT-Concept Technologie AG willcontinue to act as the operationaldivision covering developmentproduction logistics sales andmarketingAfter presiding over more than 22
years of successful business growththe founder and chairman ofCONCEPT Heinz Ruumledi is taking astep back from active involvementand will continue as CEO of CT-Concept Holding AG The board ofdirectors has named WolfgangAdemmer as the new CEO ofCT-Concept Technologie AGAdemmer 41 was Senior Directorat Infineon Technologies AGresponsible for power electronics forhybrid vehicle and white goods
since 2005 Prior to this position hedirected and handled the IGBTpower module business at eupecGmbH as Vice President Sales ampMarketing establishing a solution-oriented strategy to cope withmarkettrends including a business planfor IGBT drivers ldquoKnowing CONCEPTfor more than ten years Irsquomexcited about their potential tocreate further success in a healthymarket Stimulated by themacroeconomic demand for moreelectricity the market for mediumand high-power convertersolutions will grow steadily unlikethe purely end-consumer drivenmarkets We will help to createefficient and reliable solutions in allmedium and high-powerapplications with an emphasis on acostperformance ratio thatcompetes with in-housedevelopmentsrdquo Ademmer stated
wwwIGBT-Drivercom
Infineon and Bosch Collaboratein Power Semiconductors
Wolfgang Ademmer (left) has been appointed as CT-Concept Technologiersquos CEO whileFounder Heinz Ruumledi will continue as CEO of CT-Concept Holding
New CEO at CT-ConceptTechnologie
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 6
07_PEE_Issue 4 200907_PEE_Issue 4 2009 21409 1239 Page 1
Although the PV marketdoubled in 2008 in MW termsa contraction in shipments isanticipated in 2009 This willbe caused by the sudden drop-off in demand from Spainwith its newly implemented500MW cap This is likely toresult in a shortfall of some15 to 2GW in 2009 Althoughthis will in part be counter-balanced by growth in Italyand Eastern Europe thedramatic decline of theSpanish market will lead to an
overall drop in worldwideshipmentsldquoDespite credit issues most
major PV markets look healthyand are showing promise ofsignificant growth Howevereven if their countriesrsquo solarcapacities grow at the highlevels they saw in 2008 theycannot make up for theunprecedented contractionthat the Spanish market willsee this yearrdquo Analyst SamWilkinson commented ldquoManyanalysts are now predicting a
decline in PV module revenuesthis year IMS Researchhaving analysed the likelyperformance of individualcountries believes that MWshipments will also be lowerrdquoIn spite of this underlying
demand for PV remains veryhealthy long-term double-digit annual growth rates canbe expected The market islikely to see dramatic changesin the next few years with theemergence of newtechnologies such as micro-
inverters and the developmentof new and attractive regionalmarkets such as the US whichto date has made up a lowproportion of the overall globalmarketDifficulties in obtaining
financing will restrain USmarket growth this yearHowever in the medium-termit is anticipated to becomeone of the largest markets forPV
wwwimsresearchcom
PVMarket to Contract in 2009
8 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Mitsubishi Electric Corporation is the firstcompany in Japan which has received theInternational Railway Industry Standard (IRIS)certification in March 2009Mitsubishi Electric Corporation Power
Device Works in Fukuoka in Kumamoto andSun-A factory in Nijo have been successfullyaudited their research production andtesting facility of semiconductorcomponents Mitsubishi Electric Europe BVoffers a wide range of HV-IGBT andIntelligent Power Modules ShoichiNakagawa (Division Manager SemiconductorEuropean Business Group) appreciates thecertification as a proof of Mitsubishirsquosposition in the development and productionof semiconductor componentsThe IRIS quality standard is defined by the
UNIFE the European association for therailway supply industry The IRIS standardcovers project management (from designdevelopment to after sales services)management of tender bids changemanagement and also reliabilitymaintenance and safety levels of productsIRIS an extension of ISO 9001 is unique to the railway industry and has been widely asked for by all large railway manufacturers such as Alstom Bombardiertransportation Siemens and Ansaldobreda Mitsubishi has more than 40 years experience in developing and producing power semiconductors It has beensuccessfully directed the development of power semiconductor devices starting from current controlled GTO and Bipolar Darlington transistor to the first voltagecontrolled IGBT With its constant innovative research and development in this field Mitsubishi Electric has secured its top position
wwwmitsubishichipscom
IRIS Certification for MitsubishiElectric
According to IMS Researchrsquos latest analysis the global PV market is set to contract for the first time in2009 in terms of new installations
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 8
Let there be light
12 ndash 14 May 2009PCIM NurembergHall 12 Stand 408
ABB Switzerland Ltd SemiconductorsTel +41 58 586 1419 wwwabbcomsemiconductors
Power and productivityfor a better worldtrade
Economicallywith ABBsemiconductors
09_PEE_Issue 4 200909_PEE_Issue 4 2009 21409 1409 Page 1
10 PCIM 2009
Issue 4 2009 Power Electronics Europe
ldquoThe power and energy sector hasnever been as important as it is todayand this is leading to promisingopportunities for engineers In anutshell we expect that the greatestpart of renewable energy resourceswill be interconnected to and gothrough at least one stage of powerelectronic conversion In this contextthere are three essential topics whichshould be at the forefront of ourminds namely lsquoefficiencyrsquo lsquoreliabilityrsquoand lsquocostsrsquordquo explains Prof Alfred RuferGeneral Conference Director PCIMEuropeHaving introduced the first day of
the conference in our April issue (seepages 18 ndash 23) we now cover theremaining program of the powerelectronics sessionsAs with the first day the second
conference day starts with a keynoteChristian Gerster headingBombardier transportationslsquoCompetence center High-PowerPropulsionrsquo in Zurich will give this
keynote on May 13 845 ndash 930 inthe Room Paris Current trends inrailway traction technology areaddressing objectives in three areasCost size and weight reductionenergy efficiency increase andenabling new functions Thepresentation will give an overview ofthese trends explaining the technicalconcepts used and showing variousexamples of recent developmentsAlso in Room Paris (1000 ndash
1200) PEErsquos Special Session lsquoWideBandgap Materials and Devicesrsquofeaturing papers from CreeInternational Rectifier InfineonTechnologies and Mitsubishi Electricwill be held after this keynote (seesidebar)
Innovative devices andcomponentsThe session lsquoInnovative Devices
and Componentsrsquo takes place inRoom London (1000 ndash 1200)
Hans-Guumlnter Eckel University ofRostock (Germany) will talk about thelsquoPotential of Reverse-ConductingIGBTs in Voltage Source InvertersrsquoReverse Conducting IGBTs integratethe functionality of the IGBT and thefree-wheeling diode into one chipThis reduces the current density in theIGBT mode and especially in thediode mode Therefore the outputcurrent of the inverter can beincreased This paper analyses howthe performance improvementdepends on the applicationconditions With RC-IGBT the outputpower of the inverter can beincreased from a few percent to morethan a factor of 2
Philippe Roussel YoleDeveloppement (France) willexamine the lsquoMarket opportunities ofSiC high-voltage devices in the railtransportation fieldrsquo Train makers haveperceived the Silicon Carbide (SiC)electronics as a highly valuabletechnology for their next-gen power
products However the current SiCindustry is focusing on the 600-1200V range applications to benefitfrom the huge potential market size33 65 and even 10kV+ havealready been demonstrated andtransportation industry is nowexpecting to find commercial productsin the very near future
Robin Kelley SemiSouth (USA)
will present an lsquoOptimized Gate Driverfor Enhancement-mode SiC JFETrsquo Thefirst normally-off SiC VJFET has beenused to replace MOSFETsIGBTs in avariety of applications As device
Higher Efficiency throughBetter Power Electronics
Itrsquos time again for PCIM Europe the leading European event for power electronics
ldquoThe power and energy sector has neverbeen as important as it is today and thisis leading to promising opportunities forengineersldquo says Alfred Rufer GeneralConference Director PCIM Europe
Despite the crisis in the financial sector PCIM 2009 from May 11 ndash 14 inNuremberg looks quite healthy with 260 exhibitors and 6500 visitors expectedThe conference will see about 600 delegates Power Electronics is by far themain part of PCIM 2009 since it covers 15 of the total 23 sessions
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 10
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
CONTENTS
Power Electronics Europe Issue 4 2009
3
Editor Achim Scharf
Tel +49 (0)892865 9794
Fax +49 (0)892800 132
Email achimscharfaolcom
Production Editor Elaine Gladwell
Tel +44 (0)1322 380057
Advertisement Administration
Clare Jackson
Tel +44 (0)1732 370345
Fax +44 (0)1732 886149
Circulation Manager Anne Backers
Tel +44 (0)208 647 3133
Fax +44 (0)208 669 8013
INTERNATIONAL SALES OFFICES
Mainland Europe
Victoria Hufmann Norbert Hufmann
Tel +49 911 9397 643 Fax +49 911 9397 6459
Email peehufmanninfo
Armin Wezel
Tel +49 9568 897 097 Fax +49 9568 897 096
Email armineurokom-mediade
UK
Steve Regnier Tim Anstee
Tel +44 (0)1732 366555
email Salesstarmediaservicescouk
Eastern US
Karen C Smith-Kernc
email KarenKCSaolcom
Western US and Canada
Alan A Kernc
Tel +1 717 397 7100
Fax +1 717 397 7800
email AlanKCSaolcom
Italy
Ferruccio Silvera
Tel +39 022 846 716 Email ferrucciosilverait
Taiwan
Prisco Ind Service Corp
Tel 886 2 2322 5266 Fax 886 2 2322 2205
Publisher Ian Atkinson
Tel +44 (0)1732 370346
Fax +44 (0)1732 886149
Email IATKINSONTMIaolcom
wwwpower-magcom
Circulation and subscription Power ElectronicsEurope is available for the following subscriptioncharges Power Electronics Europe annual chargeUKNI pound60 overseas $130 EUR 120 single copiesUKNI pound10 overseas US$32 EUR 25 ContactTechmedia International Ltd Kildonan St MaryrsquosRoad Wrotham Kent TN15 7AP Great BritainTel +44 (0)1732 886495 Fax +44 (0)1732886149 Refunds on cancelled subscriptions willonly be provided at the Publisherrsquos discretion unlessspecifically guaranteed within the terms ofsubscription offer
Editorial information should be sent to The EditorPower Electronics Europe PO Box 340131 80098Munich Germany
The contents of Power Electronics Europe aresubject to reproduction in information storage andretrieval systems All rights reserved No part of thispublication may be reproduced in any form or by anymeans electronic or mechanical includingphotocopying recording or any information storageor retrieval system without the express prior writtenconsent of the publisherOrigination Elaine GladwellPrinted by Wyndeham Heron LimitedISSN 1748-3530
PAGE 20
PCIM 2009 - The Whole World ofPower ElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500
visitors expected quite similar to the year 2008 event Following is an overview on
interesting exhibits in company order
PAGE 26
Next Generation of Power MOSFETsNexFET technology is a new generation of MOSFETs for power applications with
its roots in a laterally diffused MOS (LDMOS) device used successfully for RF
signal amplifications The RF heritage provides minimum internal capacitances
and the vertical current flow offers a high-current density without gate
de-biasing issues By using NexFET switches a converterrsquos efficiency can be
significantly improved Jacek Korec and Shuming Xu Power Stage Group
Texas Instruments USA
PAGE 30
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching
frequencies between 4 and 8kHz Today however more and more applications
require frequencies of 10kHz and higher New power modules can now fill that
gap Andreas Johannsen Product Marketing Manager Industrial Products
Vincotech UnterhachingMunich Germany
PAGE 32
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system
component In the case of the gate drive module the cost performance ratio
strongly influences the make-or-buy decision for that small yet crucial building
block Continuous advances in monolithic integration as well as high voltage
transformer technology have now made it possible to combine advanced gate
drive functions and high output power density at low cost Sascha Pawel and
Wolfgang Ademmer CT-Concept Technologie AG Switzerland
PAGE 35
Improving the Efficiency of PFC StagesUsing Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power
factor correction (PFC) techniques which further improve efficiency The
interleaved boundary conduction mode (BCM) PFC approach is a good alternative
to non-interleaved continuous conduction mode (CCM) PFC method for input
power levels from 300W up to and over 1000W Jon Harper Market
Development Manager Power Conversion amp Industrial Systems Fairchild
Semiconductor Europe
PAGE 41
Website Product Locator
Sinter Technology forPower ModulesHigh-power applications such as automotive windsolar and standard industrial drives require powermodules which fulfil the demand for high reliabilitythermal and electrical ruggedness These demands aremet by deploying state-of-the-art packagingtechnologies such as solder-free pressure and springcontacts but also sinter technology Silver sintertechnology has been used to connect chips tosubstrates since 1994 Even back then the propertiesof sintered silver bonding layers and the benefits theyboast in terms of reliability were analysed and reportedon within the contexts of numerous internationalcongresses At that time however it turned out thatthis type of bonding technology was not quite readyfor use in large-scale industrial electronics Theengineers in SEMIKRONrsquos New TechnologiesDepartment thus were challenged to develop optimiseand employ this packaging technology Full story onpage 28
Cover supplied by SEMIKRON
COVER STORY
PAGE 6
Market NewsPEE looks at the latest Market News and company
developments
PAGE 10
PCIM 2009 - HigherEfficiency through BetterPower ElectronicsDespite the crisis in the financial sector PCIM 2009from May 11 ndash 14 in Nuremberg looks quite healthywith 260 exhibitors and 6500 visitors expected Theconference will see about 600 delegates PowerElectronics is by far the main part of PCIM 2009since it covers 15 of the total 23 sessions
p03 Contentsqxdp03 Contents 24409 0857 Page 3
semisinfomegmeecom middot wwwmitsubishichipscom
All the power you needFor a better environment
Motor ControlMitsubishi a leading manufacturer of Power Modules offers avariety of products like IGBT Module Intelligent Power Module(IPM) DIPCIB and DIPIPM for a wide range of Industrial MotorControl applications Covering a drive range from 04 kW toseveral 100 kW the RoHS compliant modules with the latest
chip and production technologies ensure the best efficiencyand the highest reliability The easy to use features compactsize and mechanical compatibility with previous generationsmake the offered products more attractive on the market
Please visit us PCIM 2009 Hall 12 Stand 421
04_PEE_Issue 4 200904_PEE_Issue 4 2009 21409 1238 Page 1
OPINION 5
Power Electronics Europe Issue 4 2009
Achim ScharfPEE Editor
A suitablequote as alead in to
the editorsopinion
Achim ScharfPEE Editor
The demand for low switching loss low conduction loss andhigh temperature devices has been the driving force oftechnology development in power semiconductors In recentyears SiC (silicon carbide) based diodes have beenintroduced to the market since the year 2001 as discretedevices in standard TO packages These new diodes do havesuperior performance compared to Si-based devices mainlywith respect to switching losses and thermal performanceand are well established in up to 600V hard switchingapplications in high end power supplies According to marketresearcher Yole Developpement SiC business is nowramping up with an estimated 2008 market size of about$22M at device level mainly due to the SiC Schottky barrierdiode (SBD) business Leading SiC device makers such asCree or Infineon are sharing the market with that product butnew entrants (Mitsubishi Electric Rohm Denso Fuji HitachiSTMicroelectronics) are challenging them developing newproducts and related technologies But the lsquoHoly Grailrsquo now isto get a reliable and affordable SiC switch MOSFET is themost studied device but BJT and JFET are exhibiting verypromising results and some start-ups (SemiSouth TranSiCGeneSiC) are proposing very pertinent demo products Theapplications that shape this market are currently in the 600 to1200V range and in the 6 to 20A maximum rangeThe first commercially available high power module
containing SiC Schottky diodes is a 600A 1200VPrimePACK2 IGBT power module (FF600R12IS4F) fromInfineon TechnologiesThe 1200V SiC diodes used are bare 15A Schottky
diodes The required current rating is achieved by parallelingof multiple diode chips which is easily possible due topositive temperature coefficient of these devices Due tothe reduction of turn-on losses with SiC freewheelingdiodes the efficiency or the output power of convertersystems can increase This is very attractive for applicationswhich treat efficiency as first priority (eg solar application)But efficiency is not the only benefit when using SiCfreewheeling diodes With decreased turn-on losses theswitching frequency can also increase This leads to thepossibility of choosing a much smaller output filter andthus lower system volume and cost But the performanceof Si based MOSFETs is quickly decreasing when theblocking voltage of the switch is getting higher than 1000VIGBT is a good choice for switches with blocking voltagegt1000V But due to the tail current during switching offswitching losses have certain physical limits The desire fora faster switch with low conduction loss has driven thedevelopment of a new switch based on SiC material theSiC based junction field-effect transistor (JFET) which is
implemented byInfineon now in an H-bridge power moduleFrom the calculated
results and comparisonbetween Si and SiCthe advantages of SiCbased devices can beobserved immediatelyThe utilisation of SiCdiode or SiC JFET candecrease the switchinglosses dramatically The configuration of IGBT together withSiC diode as freewheeling diodes combines the conductionperformance of IGBT and the ultra-low reverse recoverylosses of SiC Schottky diodes Even lower switching lossescan be achieved with SiC JFET Due to the physical propertyof a unipolar component the conduction loss of JFET ishowever slightly higher than IGBTs (trade-off between chiparea and cost) According to the switching frequency or therequirements from application one can choose betweenthese different configurations The benefits of utilising SiCdevices include with the same converter design theefficiency of whole system can increase smaller heatsink orpassive cooling systems can be used with the same thermaldesign the output power and power density of the invertersystem can increase and by increasing the switchingfrequency the size of output filter and thus system cost canbe reduced First applications which can benefit from theseadvantages are those which need high efficiency (forexample solar converter) or contain an output filter (forexample medical equipment or UPS) In the long run andmainly depending on the cost and diameter development ofsilicon carbide base material it is believed that silicon carbideand perhaps gallium nitride (GaN) based powersemiconductors will become the next generation of powerdevicesAll these factors are explained and described in detail by
the first keynote at PCIM 2009 the Best Paper of PCIM 2009and last but not least by the speakers of our Special SessionlsquoWide Bandgap Material and Devicesrsquo on Wednesday May13 1000 ndash 1200 in Room Paris More details in our PCIM2009 preview on the following pagesHope to meet you at PCIM 2009 in general at our booth
12-544 in particular and of course on May 13 from 1000 ndash1200 in Room Paris
Achim ScharfPEE Editor
New Power Devices Lift Off
p05 Opinionqxdp05 Opinion 21409 0934 Page 5
6 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Environmental regulations andnew limits on fuel consumptionand carbon emissions mean thatevery subsystem in a motorvehicle needs to consume lessenergy while continuing todeliver the same or betterperformance This calls for thedevelopment of new breeds ofgenerators starter-generatorsengine management systems air-conditioning systems and powersteering for example Powersemiconductors play animportant role in meetingautomotive energy-saving targetsThe collaboration between
the companies has two keyaspects First Bosch is to
license from Infineon certainmanufacturing processes forpower semiconductors ndashspecifically for low-voltagepower MOSFETs ndash along withthe requisite manufacturingtechnologies Secondly parallelto Boschrsquos own semiconductormanufacturing in ReutlingenInfineon will producecomponents developed on thebasis of these processes andwill supply Bosch with thesecomponents Going forward thetwo companies will also workjointly on the development ofenabling technologies for theproduction of powersemiconductors By working
with Bosch Infineon is not justexpanding its share of thesemiconductor market in theautomotive segment it will alsobe Boschrsquos preferred supplier ofpower semiconductors ldquoWe arethe world leader in powersemiconductors and havecarved out a significant andsustainable lead in this field oftechnologyrdquo said Peter Bauerspokesman for InfineonTechnologies AGrsquos ManagementBoard ldquoBesides setting newstandards in powersemiconductors a market thatwill grow in the long-term thiscollaboration will put the supplyof Bosch power semiconductors
on a much broader footingrdquoInfineon and Bosch havealready been working togetherfor many years and Infineonhas received the Bosch SupplierAward on four separateoccasions ldquoIn particular thiscollaboration will enable us toexpand our supply portfolio fornew drive technologies inautomobiles including hybridand purely electrical drivesystemsldquo added VolkmarDenner Boschrsquos Board ofManagement memberresponsible for automotiveelectronics
wwwinfineoncomautomotive
Swiss CT-Concept TechnologieAG the market leader in IGBT gatedrive units has reorganised itsstructure in order to support futuregrowth The newly formed CT-Concept Holding AG will own theIPR and thus all forms of driverlicensing and cooperation CT-Concept Technologie AG willcontinue to act as the operationaldivision covering developmentproduction logistics sales andmarketingAfter presiding over more than 22
years of successful business growththe founder and chairman ofCONCEPT Heinz Ruumledi is taking astep back from active involvementand will continue as CEO of CT-Concept Holding AG The board ofdirectors has named WolfgangAdemmer as the new CEO ofCT-Concept Technologie AGAdemmer 41 was Senior Directorat Infineon Technologies AGresponsible for power electronics forhybrid vehicle and white goods
since 2005 Prior to this position hedirected and handled the IGBTpower module business at eupecGmbH as Vice President Sales ampMarketing establishing a solution-oriented strategy to cope withmarkettrends including a business planfor IGBT drivers ldquoKnowing CONCEPTfor more than ten years Irsquomexcited about their potential tocreate further success in a healthymarket Stimulated by themacroeconomic demand for moreelectricity the market for mediumand high-power convertersolutions will grow steadily unlikethe purely end-consumer drivenmarkets We will help to createefficient and reliable solutions in allmedium and high-powerapplications with an emphasis on acostperformance ratio thatcompetes with in-housedevelopmentsrdquo Ademmer stated
wwwIGBT-Drivercom
Infineon and Bosch Collaboratein Power Semiconductors
Wolfgang Ademmer (left) has been appointed as CT-Concept Technologiersquos CEO whileFounder Heinz Ruumledi will continue as CEO of CT-Concept Holding
New CEO at CT-ConceptTechnologie
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 6
07_PEE_Issue 4 200907_PEE_Issue 4 2009 21409 1239 Page 1
Although the PV marketdoubled in 2008 in MW termsa contraction in shipments isanticipated in 2009 This willbe caused by the sudden drop-off in demand from Spainwith its newly implemented500MW cap This is likely toresult in a shortfall of some15 to 2GW in 2009 Althoughthis will in part be counter-balanced by growth in Italyand Eastern Europe thedramatic decline of theSpanish market will lead to an
overall drop in worldwideshipmentsldquoDespite credit issues most
major PV markets look healthyand are showing promise ofsignificant growth Howevereven if their countriesrsquo solarcapacities grow at the highlevels they saw in 2008 theycannot make up for theunprecedented contractionthat the Spanish market willsee this yearrdquo Analyst SamWilkinson commented ldquoManyanalysts are now predicting a
decline in PV module revenuesthis year IMS Researchhaving analysed the likelyperformance of individualcountries believes that MWshipments will also be lowerrdquoIn spite of this underlying
demand for PV remains veryhealthy long-term double-digit annual growth rates canbe expected The market islikely to see dramatic changesin the next few years with theemergence of newtechnologies such as micro-
inverters and the developmentof new and attractive regionalmarkets such as the US whichto date has made up a lowproportion of the overall globalmarketDifficulties in obtaining
financing will restrain USmarket growth this yearHowever in the medium-termit is anticipated to becomeone of the largest markets forPV
wwwimsresearchcom
PVMarket to Contract in 2009
8 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Mitsubishi Electric Corporation is the firstcompany in Japan which has received theInternational Railway Industry Standard (IRIS)certification in March 2009Mitsubishi Electric Corporation Power
Device Works in Fukuoka in Kumamoto andSun-A factory in Nijo have been successfullyaudited their research production andtesting facility of semiconductorcomponents Mitsubishi Electric Europe BVoffers a wide range of HV-IGBT andIntelligent Power Modules ShoichiNakagawa (Division Manager SemiconductorEuropean Business Group) appreciates thecertification as a proof of Mitsubishirsquosposition in the development and productionof semiconductor componentsThe IRIS quality standard is defined by the
UNIFE the European association for therailway supply industry The IRIS standardcovers project management (from designdevelopment to after sales services)management of tender bids changemanagement and also reliabilitymaintenance and safety levels of productsIRIS an extension of ISO 9001 is unique to the railway industry and has been widely asked for by all large railway manufacturers such as Alstom Bombardiertransportation Siemens and Ansaldobreda Mitsubishi has more than 40 years experience in developing and producing power semiconductors It has beensuccessfully directed the development of power semiconductor devices starting from current controlled GTO and Bipolar Darlington transistor to the first voltagecontrolled IGBT With its constant innovative research and development in this field Mitsubishi Electric has secured its top position
wwwmitsubishichipscom
IRIS Certification for MitsubishiElectric
According to IMS Researchrsquos latest analysis the global PV market is set to contract for the first time in2009 in terms of new installations
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 8
Let there be light
12 ndash 14 May 2009PCIM NurembergHall 12 Stand 408
ABB Switzerland Ltd SemiconductorsTel +41 58 586 1419 wwwabbcomsemiconductors
Power and productivityfor a better worldtrade
Economicallywith ABBsemiconductors
09_PEE_Issue 4 200909_PEE_Issue 4 2009 21409 1409 Page 1
10 PCIM 2009
Issue 4 2009 Power Electronics Europe
ldquoThe power and energy sector hasnever been as important as it is todayand this is leading to promisingopportunities for engineers In anutshell we expect that the greatestpart of renewable energy resourceswill be interconnected to and gothrough at least one stage of powerelectronic conversion In this contextthere are three essential topics whichshould be at the forefront of ourminds namely lsquoefficiencyrsquo lsquoreliabilityrsquoand lsquocostsrsquordquo explains Prof Alfred RuferGeneral Conference Director PCIMEuropeHaving introduced the first day of
the conference in our April issue (seepages 18 ndash 23) we now cover theremaining program of the powerelectronics sessionsAs with the first day the second
conference day starts with a keynoteChristian Gerster headingBombardier transportationslsquoCompetence center High-PowerPropulsionrsquo in Zurich will give this
keynote on May 13 845 ndash 930 inthe Room Paris Current trends inrailway traction technology areaddressing objectives in three areasCost size and weight reductionenergy efficiency increase andenabling new functions Thepresentation will give an overview ofthese trends explaining the technicalconcepts used and showing variousexamples of recent developmentsAlso in Room Paris (1000 ndash
1200) PEErsquos Special Session lsquoWideBandgap Materials and Devicesrsquofeaturing papers from CreeInternational Rectifier InfineonTechnologies and Mitsubishi Electricwill be held after this keynote (seesidebar)
Innovative devices andcomponentsThe session lsquoInnovative Devices
and Componentsrsquo takes place inRoom London (1000 ndash 1200)
Hans-Guumlnter Eckel University ofRostock (Germany) will talk about thelsquoPotential of Reverse-ConductingIGBTs in Voltage Source InvertersrsquoReverse Conducting IGBTs integratethe functionality of the IGBT and thefree-wheeling diode into one chipThis reduces the current density in theIGBT mode and especially in thediode mode Therefore the outputcurrent of the inverter can beincreased This paper analyses howthe performance improvementdepends on the applicationconditions With RC-IGBT the outputpower of the inverter can beincreased from a few percent to morethan a factor of 2
Philippe Roussel YoleDeveloppement (France) willexamine the lsquoMarket opportunities ofSiC high-voltage devices in the railtransportation fieldrsquo Train makers haveperceived the Silicon Carbide (SiC)electronics as a highly valuabletechnology for their next-gen power
products However the current SiCindustry is focusing on the 600-1200V range applications to benefitfrom the huge potential market size33 65 and even 10kV+ havealready been demonstrated andtransportation industry is nowexpecting to find commercial productsin the very near future
Robin Kelley SemiSouth (USA)
will present an lsquoOptimized Gate Driverfor Enhancement-mode SiC JFETrsquo Thefirst normally-off SiC VJFET has beenused to replace MOSFETsIGBTs in avariety of applications As device
Higher Efficiency throughBetter Power Electronics
Itrsquos time again for PCIM Europe the leading European event for power electronics
ldquoThe power and energy sector has neverbeen as important as it is today and thisis leading to promising opportunities forengineersldquo says Alfred Rufer GeneralConference Director PCIM Europe
Despite the crisis in the financial sector PCIM 2009 from May 11 ndash 14 inNuremberg looks quite healthy with 260 exhibitors and 6500 visitors expectedThe conference will see about 600 delegates Power Electronics is by far themain part of PCIM 2009 since it covers 15 of the total 23 sessions
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 10
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
semisinfomegmeecom middot wwwmitsubishichipscom
All the power you needFor a better environment
Motor ControlMitsubishi a leading manufacturer of Power Modules offers avariety of products like IGBT Module Intelligent Power Module(IPM) DIPCIB and DIPIPM for a wide range of Industrial MotorControl applications Covering a drive range from 04 kW toseveral 100 kW the RoHS compliant modules with the latest
chip and production technologies ensure the best efficiencyand the highest reliability The easy to use features compactsize and mechanical compatibility with previous generationsmake the offered products more attractive on the market
Please visit us PCIM 2009 Hall 12 Stand 421
04_PEE_Issue 4 200904_PEE_Issue 4 2009 21409 1238 Page 1
OPINION 5
Power Electronics Europe Issue 4 2009
Achim ScharfPEE Editor
A suitablequote as alead in to
the editorsopinion
Achim ScharfPEE Editor
The demand for low switching loss low conduction loss andhigh temperature devices has been the driving force oftechnology development in power semiconductors In recentyears SiC (silicon carbide) based diodes have beenintroduced to the market since the year 2001 as discretedevices in standard TO packages These new diodes do havesuperior performance compared to Si-based devices mainlywith respect to switching losses and thermal performanceand are well established in up to 600V hard switchingapplications in high end power supplies According to marketresearcher Yole Developpement SiC business is nowramping up with an estimated 2008 market size of about$22M at device level mainly due to the SiC Schottky barrierdiode (SBD) business Leading SiC device makers such asCree or Infineon are sharing the market with that product butnew entrants (Mitsubishi Electric Rohm Denso Fuji HitachiSTMicroelectronics) are challenging them developing newproducts and related technologies But the lsquoHoly Grailrsquo now isto get a reliable and affordable SiC switch MOSFET is themost studied device but BJT and JFET are exhibiting verypromising results and some start-ups (SemiSouth TranSiCGeneSiC) are proposing very pertinent demo products Theapplications that shape this market are currently in the 600 to1200V range and in the 6 to 20A maximum rangeThe first commercially available high power module
containing SiC Schottky diodes is a 600A 1200VPrimePACK2 IGBT power module (FF600R12IS4F) fromInfineon TechnologiesThe 1200V SiC diodes used are bare 15A Schottky
diodes The required current rating is achieved by parallelingof multiple diode chips which is easily possible due topositive temperature coefficient of these devices Due tothe reduction of turn-on losses with SiC freewheelingdiodes the efficiency or the output power of convertersystems can increase This is very attractive for applicationswhich treat efficiency as first priority (eg solar application)But efficiency is not the only benefit when using SiCfreewheeling diodes With decreased turn-on losses theswitching frequency can also increase This leads to thepossibility of choosing a much smaller output filter andthus lower system volume and cost But the performanceof Si based MOSFETs is quickly decreasing when theblocking voltage of the switch is getting higher than 1000VIGBT is a good choice for switches with blocking voltagegt1000V But due to the tail current during switching offswitching losses have certain physical limits The desire fora faster switch with low conduction loss has driven thedevelopment of a new switch based on SiC material theSiC based junction field-effect transistor (JFET) which is
implemented byInfineon now in an H-bridge power moduleFrom the calculated
results and comparisonbetween Si and SiCthe advantages of SiCbased devices can beobserved immediatelyThe utilisation of SiCdiode or SiC JFET candecrease the switchinglosses dramatically The configuration of IGBT together withSiC diode as freewheeling diodes combines the conductionperformance of IGBT and the ultra-low reverse recoverylosses of SiC Schottky diodes Even lower switching lossescan be achieved with SiC JFET Due to the physical propertyof a unipolar component the conduction loss of JFET ishowever slightly higher than IGBTs (trade-off between chiparea and cost) According to the switching frequency or therequirements from application one can choose betweenthese different configurations The benefits of utilising SiCdevices include with the same converter design theefficiency of whole system can increase smaller heatsink orpassive cooling systems can be used with the same thermaldesign the output power and power density of the invertersystem can increase and by increasing the switchingfrequency the size of output filter and thus system cost canbe reduced First applications which can benefit from theseadvantages are those which need high efficiency (forexample solar converter) or contain an output filter (forexample medical equipment or UPS) In the long run andmainly depending on the cost and diameter development ofsilicon carbide base material it is believed that silicon carbideand perhaps gallium nitride (GaN) based powersemiconductors will become the next generation of powerdevicesAll these factors are explained and described in detail by
the first keynote at PCIM 2009 the Best Paper of PCIM 2009and last but not least by the speakers of our Special SessionlsquoWide Bandgap Material and Devicesrsquo on Wednesday May13 1000 ndash 1200 in Room Paris More details in our PCIM2009 preview on the following pagesHope to meet you at PCIM 2009 in general at our booth
12-544 in particular and of course on May 13 from 1000 ndash1200 in Room Paris
Achim ScharfPEE Editor
New Power Devices Lift Off
p05 Opinionqxdp05 Opinion 21409 0934 Page 5
6 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Environmental regulations andnew limits on fuel consumptionand carbon emissions mean thatevery subsystem in a motorvehicle needs to consume lessenergy while continuing todeliver the same or betterperformance This calls for thedevelopment of new breeds ofgenerators starter-generatorsengine management systems air-conditioning systems and powersteering for example Powersemiconductors play animportant role in meetingautomotive energy-saving targetsThe collaboration between
the companies has two keyaspects First Bosch is to
license from Infineon certainmanufacturing processes forpower semiconductors ndashspecifically for low-voltagepower MOSFETs ndash along withthe requisite manufacturingtechnologies Secondly parallelto Boschrsquos own semiconductormanufacturing in ReutlingenInfineon will producecomponents developed on thebasis of these processes andwill supply Bosch with thesecomponents Going forward thetwo companies will also workjointly on the development ofenabling technologies for theproduction of powersemiconductors By working
with Bosch Infineon is not justexpanding its share of thesemiconductor market in theautomotive segment it will alsobe Boschrsquos preferred supplier ofpower semiconductors ldquoWe arethe world leader in powersemiconductors and havecarved out a significant andsustainable lead in this field oftechnologyrdquo said Peter Bauerspokesman for InfineonTechnologies AGrsquos ManagementBoard ldquoBesides setting newstandards in powersemiconductors a market thatwill grow in the long-term thiscollaboration will put the supplyof Bosch power semiconductors
on a much broader footingrdquoInfineon and Bosch havealready been working togetherfor many years and Infineonhas received the Bosch SupplierAward on four separateoccasions ldquoIn particular thiscollaboration will enable us toexpand our supply portfolio fornew drive technologies inautomobiles including hybridand purely electrical drivesystemsldquo added VolkmarDenner Boschrsquos Board ofManagement memberresponsible for automotiveelectronics
wwwinfineoncomautomotive
Swiss CT-Concept TechnologieAG the market leader in IGBT gatedrive units has reorganised itsstructure in order to support futuregrowth The newly formed CT-Concept Holding AG will own theIPR and thus all forms of driverlicensing and cooperation CT-Concept Technologie AG willcontinue to act as the operationaldivision covering developmentproduction logistics sales andmarketingAfter presiding over more than 22
years of successful business growththe founder and chairman ofCONCEPT Heinz Ruumledi is taking astep back from active involvementand will continue as CEO of CT-Concept Holding AG The board ofdirectors has named WolfgangAdemmer as the new CEO ofCT-Concept Technologie AGAdemmer 41 was Senior Directorat Infineon Technologies AGresponsible for power electronics forhybrid vehicle and white goods
since 2005 Prior to this position hedirected and handled the IGBTpower module business at eupecGmbH as Vice President Sales ampMarketing establishing a solution-oriented strategy to cope withmarkettrends including a business planfor IGBT drivers ldquoKnowing CONCEPTfor more than ten years Irsquomexcited about their potential tocreate further success in a healthymarket Stimulated by themacroeconomic demand for moreelectricity the market for mediumand high-power convertersolutions will grow steadily unlikethe purely end-consumer drivenmarkets We will help to createefficient and reliable solutions in allmedium and high-powerapplications with an emphasis on acostperformance ratio thatcompetes with in-housedevelopmentsrdquo Ademmer stated
wwwIGBT-Drivercom
Infineon and Bosch Collaboratein Power Semiconductors
Wolfgang Ademmer (left) has been appointed as CT-Concept Technologiersquos CEO whileFounder Heinz Ruumledi will continue as CEO of CT-Concept Holding
New CEO at CT-ConceptTechnologie
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 6
07_PEE_Issue 4 200907_PEE_Issue 4 2009 21409 1239 Page 1
Although the PV marketdoubled in 2008 in MW termsa contraction in shipments isanticipated in 2009 This willbe caused by the sudden drop-off in demand from Spainwith its newly implemented500MW cap This is likely toresult in a shortfall of some15 to 2GW in 2009 Althoughthis will in part be counter-balanced by growth in Italyand Eastern Europe thedramatic decline of theSpanish market will lead to an
overall drop in worldwideshipmentsldquoDespite credit issues most
major PV markets look healthyand are showing promise ofsignificant growth Howevereven if their countriesrsquo solarcapacities grow at the highlevels they saw in 2008 theycannot make up for theunprecedented contractionthat the Spanish market willsee this yearrdquo Analyst SamWilkinson commented ldquoManyanalysts are now predicting a
decline in PV module revenuesthis year IMS Researchhaving analysed the likelyperformance of individualcountries believes that MWshipments will also be lowerrdquoIn spite of this underlying
demand for PV remains veryhealthy long-term double-digit annual growth rates canbe expected The market islikely to see dramatic changesin the next few years with theemergence of newtechnologies such as micro-
inverters and the developmentof new and attractive regionalmarkets such as the US whichto date has made up a lowproportion of the overall globalmarketDifficulties in obtaining
financing will restrain USmarket growth this yearHowever in the medium-termit is anticipated to becomeone of the largest markets forPV
wwwimsresearchcom
PVMarket to Contract in 2009
8 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Mitsubishi Electric Corporation is the firstcompany in Japan which has received theInternational Railway Industry Standard (IRIS)certification in March 2009Mitsubishi Electric Corporation Power
Device Works in Fukuoka in Kumamoto andSun-A factory in Nijo have been successfullyaudited their research production andtesting facility of semiconductorcomponents Mitsubishi Electric Europe BVoffers a wide range of HV-IGBT andIntelligent Power Modules ShoichiNakagawa (Division Manager SemiconductorEuropean Business Group) appreciates thecertification as a proof of Mitsubishirsquosposition in the development and productionof semiconductor componentsThe IRIS quality standard is defined by the
UNIFE the European association for therailway supply industry The IRIS standardcovers project management (from designdevelopment to after sales services)management of tender bids changemanagement and also reliabilitymaintenance and safety levels of productsIRIS an extension of ISO 9001 is unique to the railway industry and has been widely asked for by all large railway manufacturers such as Alstom Bombardiertransportation Siemens and Ansaldobreda Mitsubishi has more than 40 years experience in developing and producing power semiconductors It has beensuccessfully directed the development of power semiconductor devices starting from current controlled GTO and Bipolar Darlington transistor to the first voltagecontrolled IGBT With its constant innovative research and development in this field Mitsubishi Electric has secured its top position
wwwmitsubishichipscom
IRIS Certification for MitsubishiElectric
According to IMS Researchrsquos latest analysis the global PV market is set to contract for the first time in2009 in terms of new installations
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 8
Let there be light
12 ndash 14 May 2009PCIM NurembergHall 12 Stand 408
ABB Switzerland Ltd SemiconductorsTel +41 58 586 1419 wwwabbcomsemiconductors
Power and productivityfor a better worldtrade
Economicallywith ABBsemiconductors
09_PEE_Issue 4 200909_PEE_Issue 4 2009 21409 1409 Page 1
10 PCIM 2009
Issue 4 2009 Power Electronics Europe
ldquoThe power and energy sector hasnever been as important as it is todayand this is leading to promisingopportunities for engineers In anutshell we expect that the greatestpart of renewable energy resourceswill be interconnected to and gothrough at least one stage of powerelectronic conversion In this contextthere are three essential topics whichshould be at the forefront of ourminds namely lsquoefficiencyrsquo lsquoreliabilityrsquoand lsquocostsrsquordquo explains Prof Alfred RuferGeneral Conference Director PCIMEuropeHaving introduced the first day of
the conference in our April issue (seepages 18 ndash 23) we now cover theremaining program of the powerelectronics sessionsAs with the first day the second
conference day starts with a keynoteChristian Gerster headingBombardier transportationslsquoCompetence center High-PowerPropulsionrsquo in Zurich will give this
keynote on May 13 845 ndash 930 inthe Room Paris Current trends inrailway traction technology areaddressing objectives in three areasCost size and weight reductionenergy efficiency increase andenabling new functions Thepresentation will give an overview ofthese trends explaining the technicalconcepts used and showing variousexamples of recent developmentsAlso in Room Paris (1000 ndash
1200) PEErsquos Special Session lsquoWideBandgap Materials and Devicesrsquofeaturing papers from CreeInternational Rectifier InfineonTechnologies and Mitsubishi Electricwill be held after this keynote (seesidebar)
Innovative devices andcomponentsThe session lsquoInnovative Devices
and Componentsrsquo takes place inRoom London (1000 ndash 1200)
Hans-Guumlnter Eckel University ofRostock (Germany) will talk about thelsquoPotential of Reverse-ConductingIGBTs in Voltage Source InvertersrsquoReverse Conducting IGBTs integratethe functionality of the IGBT and thefree-wheeling diode into one chipThis reduces the current density in theIGBT mode and especially in thediode mode Therefore the outputcurrent of the inverter can beincreased This paper analyses howthe performance improvementdepends on the applicationconditions With RC-IGBT the outputpower of the inverter can beincreased from a few percent to morethan a factor of 2
Philippe Roussel YoleDeveloppement (France) willexamine the lsquoMarket opportunities ofSiC high-voltage devices in the railtransportation fieldrsquo Train makers haveperceived the Silicon Carbide (SiC)electronics as a highly valuabletechnology for their next-gen power
products However the current SiCindustry is focusing on the 600-1200V range applications to benefitfrom the huge potential market size33 65 and even 10kV+ havealready been demonstrated andtransportation industry is nowexpecting to find commercial productsin the very near future
Robin Kelley SemiSouth (USA)
will present an lsquoOptimized Gate Driverfor Enhancement-mode SiC JFETrsquo Thefirst normally-off SiC VJFET has beenused to replace MOSFETsIGBTs in avariety of applications As device
Higher Efficiency throughBetter Power Electronics
Itrsquos time again for PCIM Europe the leading European event for power electronics
ldquoThe power and energy sector has neverbeen as important as it is today and thisis leading to promising opportunities forengineersldquo says Alfred Rufer GeneralConference Director PCIM Europe
Despite the crisis in the financial sector PCIM 2009 from May 11 ndash 14 inNuremberg looks quite healthy with 260 exhibitors and 6500 visitors expectedThe conference will see about 600 delegates Power Electronics is by far themain part of PCIM 2009 since it covers 15 of the total 23 sessions
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 10
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
OPINION 5
Power Electronics Europe Issue 4 2009
Achim ScharfPEE Editor
A suitablequote as alead in to
the editorsopinion
Achim ScharfPEE Editor
The demand for low switching loss low conduction loss andhigh temperature devices has been the driving force oftechnology development in power semiconductors In recentyears SiC (silicon carbide) based diodes have beenintroduced to the market since the year 2001 as discretedevices in standard TO packages These new diodes do havesuperior performance compared to Si-based devices mainlywith respect to switching losses and thermal performanceand are well established in up to 600V hard switchingapplications in high end power supplies According to marketresearcher Yole Developpement SiC business is nowramping up with an estimated 2008 market size of about$22M at device level mainly due to the SiC Schottky barrierdiode (SBD) business Leading SiC device makers such asCree or Infineon are sharing the market with that product butnew entrants (Mitsubishi Electric Rohm Denso Fuji HitachiSTMicroelectronics) are challenging them developing newproducts and related technologies But the lsquoHoly Grailrsquo now isto get a reliable and affordable SiC switch MOSFET is themost studied device but BJT and JFET are exhibiting verypromising results and some start-ups (SemiSouth TranSiCGeneSiC) are proposing very pertinent demo products Theapplications that shape this market are currently in the 600 to1200V range and in the 6 to 20A maximum rangeThe first commercially available high power module
containing SiC Schottky diodes is a 600A 1200VPrimePACK2 IGBT power module (FF600R12IS4F) fromInfineon TechnologiesThe 1200V SiC diodes used are bare 15A Schottky
diodes The required current rating is achieved by parallelingof multiple diode chips which is easily possible due topositive temperature coefficient of these devices Due tothe reduction of turn-on losses with SiC freewheelingdiodes the efficiency or the output power of convertersystems can increase This is very attractive for applicationswhich treat efficiency as first priority (eg solar application)But efficiency is not the only benefit when using SiCfreewheeling diodes With decreased turn-on losses theswitching frequency can also increase This leads to thepossibility of choosing a much smaller output filter andthus lower system volume and cost But the performanceof Si based MOSFETs is quickly decreasing when theblocking voltage of the switch is getting higher than 1000VIGBT is a good choice for switches with blocking voltagegt1000V But due to the tail current during switching offswitching losses have certain physical limits The desire fora faster switch with low conduction loss has driven thedevelopment of a new switch based on SiC material theSiC based junction field-effect transistor (JFET) which is
implemented byInfineon now in an H-bridge power moduleFrom the calculated
results and comparisonbetween Si and SiCthe advantages of SiCbased devices can beobserved immediatelyThe utilisation of SiCdiode or SiC JFET candecrease the switchinglosses dramatically The configuration of IGBT together withSiC diode as freewheeling diodes combines the conductionperformance of IGBT and the ultra-low reverse recoverylosses of SiC Schottky diodes Even lower switching lossescan be achieved with SiC JFET Due to the physical propertyof a unipolar component the conduction loss of JFET ishowever slightly higher than IGBTs (trade-off between chiparea and cost) According to the switching frequency or therequirements from application one can choose betweenthese different configurations The benefits of utilising SiCdevices include with the same converter design theefficiency of whole system can increase smaller heatsink orpassive cooling systems can be used with the same thermaldesign the output power and power density of the invertersystem can increase and by increasing the switchingfrequency the size of output filter and thus system cost canbe reduced First applications which can benefit from theseadvantages are those which need high efficiency (forexample solar converter) or contain an output filter (forexample medical equipment or UPS) In the long run andmainly depending on the cost and diameter development ofsilicon carbide base material it is believed that silicon carbideand perhaps gallium nitride (GaN) based powersemiconductors will become the next generation of powerdevicesAll these factors are explained and described in detail by
the first keynote at PCIM 2009 the Best Paper of PCIM 2009and last but not least by the speakers of our Special SessionlsquoWide Bandgap Material and Devicesrsquo on Wednesday May13 1000 ndash 1200 in Room Paris More details in our PCIM2009 preview on the following pagesHope to meet you at PCIM 2009 in general at our booth
12-544 in particular and of course on May 13 from 1000 ndash1200 in Room Paris
Achim ScharfPEE Editor
New Power Devices Lift Off
p05 Opinionqxdp05 Opinion 21409 0934 Page 5
6 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Environmental regulations andnew limits on fuel consumptionand carbon emissions mean thatevery subsystem in a motorvehicle needs to consume lessenergy while continuing todeliver the same or betterperformance This calls for thedevelopment of new breeds ofgenerators starter-generatorsengine management systems air-conditioning systems and powersteering for example Powersemiconductors play animportant role in meetingautomotive energy-saving targetsThe collaboration between
the companies has two keyaspects First Bosch is to
license from Infineon certainmanufacturing processes forpower semiconductors ndashspecifically for low-voltagepower MOSFETs ndash along withthe requisite manufacturingtechnologies Secondly parallelto Boschrsquos own semiconductormanufacturing in ReutlingenInfineon will producecomponents developed on thebasis of these processes andwill supply Bosch with thesecomponents Going forward thetwo companies will also workjointly on the development ofenabling technologies for theproduction of powersemiconductors By working
with Bosch Infineon is not justexpanding its share of thesemiconductor market in theautomotive segment it will alsobe Boschrsquos preferred supplier ofpower semiconductors ldquoWe arethe world leader in powersemiconductors and havecarved out a significant andsustainable lead in this field oftechnologyrdquo said Peter Bauerspokesman for InfineonTechnologies AGrsquos ManagementBoard ldquoBesides setting newstandards in powersemiconductors a market thatwill grow in the long-term thiscollaboration will put the supplyof Bosch power semiconductors
on a much broader footingrdquoInfineon and Bosch havealready been working togetherfor many years and Infineonhas received the Bosch SupplierAward on four separateoccasions ldquoIn particular thiscollaboration will enable us toexpand our supply portfolio fornew drive technologies inautomobiles including hybridand purely electrical drivesystemsldquo added VolkmarDenner Boschrsquos Board ofManagement memberresponsible for automotiveelectronics
wwwinfineoncomautomotive
Swiss CT-Concept TechnologieAG the market leader in IGBT gatedrive units has reorganised itsstructure in order to support futuregrowth The newly formed CT-Concept Holding AG will own theIPR and thus all forms of driverlicensing and cooperation CT-Concept Technologie AG willcontinue to act as the operationaldivision covering developmentproduction logistics sales andmarketingAfter presiding over more than 22
years of successful business growththe founder and chairman ofCONCEPT Heinz Ruumledi is taking astep back from active involvementand will continue as CEO of CT-Concept Holding AG The board ofdirectors has named WolfgangAdemmer as the new CEO ofCT-Concept Technologie AGAdemmer 41 was Senior Directorat Infineon Technologies AGresponsible for power electronics forhybrid vehicle and white goods
since 2005 Prior to this position hedirected and handled the IGBTpower module business at eupecGmbH as Vice President Sales ampMarketing establishing a solution-oriented strategy to cope withmarkettrends including a business planfor IGBT drivers ldquoKnowing CONCEPTfor more than ten years Irsquomexcited about their potential tocreate further success in a healthymarket Stimulated by themacroeconomic demand for moreelectricity the market for mediumand high-power convertersolutions will grow steadily unlikethe purely end-consumer drivenmarkets We will help to createefficient and reliable solutions in allmedium and high-powerapplications with an emphasis on acostperformance ratio thatcompetes with in-housedevelopmentsrdquo Ademmer stated
wwwIGBT-Drivercom
Infineon and Bosch Collaboratein Power Semiconductors
Wolfgang Ademmer (left) has been appointed as CT-Concept Technologiersquos CEO whileFounder Heinz Ruumledi will continue as CEO of CT-Concept Holding
New CEO at CT-ConceptTechnologie
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 6
07_PEE_Issue 4 200907_PEE_Issue 4 2009 21409 1239 Page 1
Although the PV marketdoubled in 2008 in MW termsa contraction in shipments isanticipated in 2009 This willbe caused by the sudden drop-off in demand from Spainwith its newly implemented500MW cap This is likely toresult in a shortfall of some15 to 2GW in 2009 Althoughthis will in part be counter-balanced by growth in Italyand Eastern Europe thedramatic decline of theSpanish market will lead to an
overall drop in worldwideshipmentsldquoDespite credit issues most
major PV markets look healthyand are showing promise ofsignificant growth Howevereven if their countriesrsquo solarcapacities grow at the highlevels they saw in 2008 theycannot make up for theunprecedented contractionthat the Spanish market willsee this yearrdquo Analyst SamWilkinson commented ldquoManyanalysts are now predicting a
decline in PV module revenuesthis year IMS Researchhaving analysed the likelyperformance of individualcountries believes that MWshipments will also be lowerrdquoIn spite of this underlying
demand for PV remains veryhealthy long-term double-digit annual growth rates canbe expected The market islikely to see dramatic changesin the next few years with theemergence of newtechnologies such as micro-
inverters and the developmentof new and attractive regionalmarkets such as the US whichto date has made up a lowproportion of the overall globalmarketDifficulties in obtaining
financing will restrain USmarket growth this yearHowever in the medium-termit is anticipated to becomeone of the largest markets forPV
wwwimsresearchcom
PVMarket to Contract in 2009
8 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Mitsubishi Electric Corporation is the firstcompany in Japan which has received theInternational Railway Industry Standard (IRIS)certification in March 2009Mitsubishi Electric Corporation Power
Device Works in Fukuoka in Kumamoto andSun-A factory in Nijo have been successfullyaudited their research production andtesting facility of semiconductorcomponents Mitsubishi Electric Europe BVoffers a wide range of HV-IGBT andIntelligent Power Modules ShoichiNakagawa (Division Manager SemiconductorEuropean Business Group) appreciates thecertification as a proof of Mitsubishirsquosposition in the development and productionof semiconductor componentsThe IRIS quality standard is defined by the
UNIFE the European association for therailway supply industry The IRIS standardcovers project management (from designdevelopment to after sales services)management of tender bids changemanagement and also reliabilitymaintenance and safety levels of productsIRIS an extension of ISO 9001 is unique to the railway industry and has been widely asked for by all large railway manufacturers such as Alstom Bombardiertransportation Siemens and Ansaldobreda Mitsubishi has more than 40 years experience in developing and producing power semiconductors It has beensuccessfully directed the development of power semiconductor devices starting from current controlled GTO and Bipolar Darlington transistor to the first voltagecontrolled IGBT With its constant innovative research and development in this field Mitsubishi Electric has secured its top position
wwwmitsubishichipscom
IRIS Certification for MitsubishiElectric
According to IMS Researchrsquos latest analysis the global PV market is set to contract for the first time in2009 in terms of new installations
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 8
Let there be light
12 ndash 14 May 2009PCIM NurembergHall 12 Stand 408
ABB Switzerland Ltd SemiconductorsTel +41 58 586 1419 wwwabbcomsemiconductors
Power and productivityfor a better worldtrade
Economicallywith ABBsemiconductors
09_PEE_Issue 4 200909_PEE_Issue 4 2009 21409 1409 Page 1
10 PCIM 2009
Issue 4 2009 Power Electronics Europe
ldquoThe power and energy sector hasnever been as important as it is todayand this is leading to promisingopportunities for engineers In anutshell we expect that the greatestpart of renewable energy resourceswill be interconnected to and gothrough at least one stage of powerelectronic conversion In this contextthere are three essential topics whichshould be at the forefront of ourminds namely lsquoefficiencyrsquo lsquoreliabilityrsquoand lsquocostsrsquordquo explains Prof Alfred RuferGeneral Conference Director PCIMEuropeHaving introduced the first day of
the conference in our April issue (seepages 18 ndash 23) we now cover theremaining program of the powerelectronics sessionsAs with the first day the second
conference day starts with a keynoteChristian Gerster headingBombardier transportationslsquoCompetence center High-PowerPropulsionrsquo in Zurich will give this
keynote on May 13 845 ndash 930 inthe Room Paris Current trends inrailway traction technology areaddressing objectives in three areasCost size and weight reductionenergy efficiency increase andenabling new functions Thepresentation will give an overview ofthese trends explaining the technicalconcepts used and showing variousexamples of recent developmentsAlso in Room Paris (1000 ndash
1200) PEErsquos Special Session lsquoWideBandgap Materials and Devicesrsquofeaturing papers from CreeInternational Rectifier InfineonTechnologies and Mitsubishi Electricwill be held after this keynote (seesidebar)
Innovative devices andcomponentsThe session lsquoInnovative Devices
and Componentsrsquo takes place inRoom London (1000 ndash 1200)
Hans-Guumlnter Eckel University ofRostock (Germany) will talk about thelsquoPotential of Reverse-ConductingIGBTs in Voltage Source InvertersrsquoReverse Conducting IGBTs integratethe functionality of the IGBT and thefree-wheeling diode into one chipThis reduces the current density in theIGBT mode and especially in thediode mode Therefore the outputcurrent of the inverter can beincreased This paper analyses howthe performance improvementdepends on the applicationconditions With RC-IGBT the outputpower of the inverter can beincreased from a few percent to morethan a factor of 2
Philippe Roussel YoleDeveloppement (France) willexamine the lsquoMarket opportunities ofSiC high-voltage devices in the railtransportation fieldrsquo Train makers haveperceived the Silicon Carbide (SiC)electronics as a highly valuabletechnology for their next-gen power
products However the current SiCindustry is focusing on the 600-1200V range applications to benefitfrom the huge potential market size33 65 and even 10kV+ havealready been demonstrated andtransportation industry is nowexpecting to find commercial productsin the very near future
Robin Kelley SemiSouth (USA)
will present an lsquoOptimized Gate Driverfor Enhancement-mode SiC JFETrsquo Thefirst normally-off SiC VJFET has beenused to replace MOSFETsIGBTs in avariety of applications As device
Higher Efficiency throughBetter Power Electronics
Itrsquos time again for PCIM Europe the leading European event for power electronics
ldquoThe power and energy sector has neverbeen as important as it is today and thisis leading to promising opportunities forengineersldquo says Alfred Rufer GeneralConference Director PCIM Europe
Despite the crisis in the financial sector PCIM 2009 from May 11 ndash 14 inNuremberg looks quite healthy with 260 exhibitors and 6500 visitors expectedThe conference will see about 600 delegates Power Electronics is by far themain part of PCIM 2009 since it covers 15 of the total 23 sessions
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 10
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
6 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Environmental regulations andnew limits on fuel consumptionand carbon emissions mean thatevery subsystem in a motorvehicle needs to consume lessenergy while continuing todeliver the same or betterperformance This calls for thedevelopment of new breeds ofgenerators starter-generatorsengine management systems air-conditioning systems and powersteering for example Powersemiconductors play animportant role in meetingautomotive energy-saving targetsThe collaboration between
the companies has two keyaspects First Bosch is to
license from Infineon certainmanufacturing processes forpower semiconductors ndashspecifically for low-voltagepower MOSFETs ndash along withthe requisite manufacturingtechnologies Secondly parallelto Boschrsquos own semiconductormanufacturing in ReutlingenInfineon will producecomponents developed on thebasis of these processes andwill supply Bosch with thesecomponents Going forward thetwo companies will also workjointly on the development ofenabling technologies for theproduction of powersemiconductors By working
with Bosch Infineon is not justexpanding its share of thesemiconductor market in theautomotive segment it will alsobe Boschrsquos preferred supplier ofpower semiconductors ldquoWe arethe world leader in powersemiconductors and havecarved out a significant andsustainable lead in this field oftechnologyrdquo said Peter Bauerspokesman for InfineonTechnologies AGrsquos ManagementBoard ldquoBesides setting newstandards in powersemiconductors a market thatwill grow in the long-term thiscollaboration will put the supplyof Bosch power semiconductors
on a much broader footingrdquoInfineon and Bosch havealready been working togetherfor many years and Infineonhas received the Bosch SupplierAward on four separateoccasions ldquoIn particular thiscollaboration will enable us toexpand our supply portfolio fornew drive technologies inautomobiles including hybridand purely electrical drivesystemsldquo added VolkmarDenner Boschrsquos Board ofManagement memberresponsible for automotiveelectronics
wwwinfineoncomautomotive
Swiss CT-Concept TechnologieAG the market leader in IGBT gatedrive units has reorganised itsstructure in order to support futuregrowth The newly formed CT-Concept Holding AG will own theIPR and thus all forms of driverlicensing and cooperation CT-Concept Technologie AG willcontinue to act as the operationaldivision covering developmentproduction logistics sales andmarketingAfter presiding over more than 22
years of successful business growththe founder and chairman ofCONCEPT Heinz Ruumledi is taking astep back from active involvementand will continue as CEO of CT-Concept Holding AG The board ofdirectors has named WolfgangAdemmer as the new CEO ofCT-Concept Technologie AGAdemmer 41 was Senior Directorat Infineon Technologies AGresponsible for power electronics forhybrid vehicle and white goods
since 2005 Prior to this position hedirected and handled the IGBTpower module business at eupecGmbH as Vice President Sales ampMarketing establishing a solution-oriented strategy to cope withmarkettrends including a business planfor IGBT drivers ldquoKnowing CONCEPTfor more than ten years Irsquomexcited about their potential tocreate further success in a healthymarket Stimulated by themacroeconomic demand for moreelectricity the market for mediumand high-power convertersolutions will grow steadily unlikethe purely end-consumer drivenmarkets We will help to createefficient and reliable solutions in allmedium and high-powerapplications with an emphasis on acostperformance ratio thatcompetes with in-housedevelopmentsrdquo Ademmer stated
wwwIGBT-Drivercom
Infineon and Bosch Collaboratein Power Semiconductors
Wolfgang Ademmer (left) has been appointed as CT-Concept Technologiersquos CEO whileFounder Heinz Ruumledi will continue as CEO of CT-Concept Holding
New CEO at CT-ConceptTechnologie
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 6
07_PEE_Issue 4 200907_PEE_Issue 4 2009 21409 1239 Page 1
Although the PV marketdoubled in 2008 in MW termsa contraction in shipments isanticipated in 2009 This willbe caused by the sudden drop-off in demand from Spainwith its newly implemented500MW cap This is likely toresult in a shortfall of some15 to 2GW in 2009 Althoughthis will in part be counter-balanced by growth in Italyand Eastern Europe thedramatic decline of theSpanish market will lead to an
overall drop in worldwideshipmentsldquoDespite credit issues most
major PV markets look healthyand are showing promise ofsignificant growth Howevereven if their countriesrsquo solarcapacities grow at the highlevels they saw in 2008 theycannot make up for theunprecedented contractionthat the Spanish market willsee this yearrdquo Analyst SamWilkinson commented ldquoManyanalysts are now predicting a
decline in PV module revenuesthis year IMS Researchhaving analysed the likelyperformance of individualcountries believes that MWshipments will also be lowerrdquoIn spite of this underlying
demand for PV remains veryhealthy long-term double-digit annual growth rates canbe expected The market islikely to see dramatic changesin the next few years with theemergence of newtechnologies such as micro-
inverters and the developmentof new and attractive regionalmarkets such as the US whichto date has made up a lowproportion of the overall globalmarketDifficulties in obtaining
financing will restrain USmarket growth this yearHowever in the medium-termit is anticipated to becomeone of the largest markets forPV
wwwimsresearchcom
PVMarket to Contract in 2009
8 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Mitsubishi Electric Corporation is the firstcompany in Japan which has received theInternational Railway Industry Standard (IRIS)certification in March 2009Mitsubishi Electric Corporation Power
Device Works in Fukuoka in Kumamoto andSun-A factory in Nijo have been successfullyaudited their research production andtesting facility of semiconductorcomponents Mitsubishi Electric Europe BVoffers a wide range of HV-IGBT andIntelligent Power Modules ShoichiNakagawa (Division Manager SemiconductorEuropean Business Group) appreciates thecertification as a proof of Mitsubishirsquosposition in the development and productionof semiconductor componentsThe IRIS quality standard is defined by the
UNIFE the European association for therailway supply industry The IRIS standardcovers project management (from designdevelopment to after sales services)management of tender bids changemanagement and also reliabilitymaintenance and safety levels of productsIRIS an extension of ISO 9001 is unique to the railway industry and has been widely asked for by all large railway manufacturers such as Alstom Bombardiertransportation Siemens and Ansaldobreda Mitsubishi has more than 40 years experience in developing and producing power semiconductors It has beensuccessfully directed the development of power semiconductor devices starting from current controlled GTO and Bipolar Darlington transistor to the first voltagecontrolled IGBT With its constant innovative research and development in this field Mitsubishi Electric has secured its top position
wwwmitsubishichipscom
IRIS Certification for MitsubishiElectric
According to IMS Researchrsquos latest analysis the global PV market is set to contract for the first time in2009 in terms of new installations
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 8
Let there be light
12 ndash 14 May 2009PCIM NurembergHall 12 Stand 408
ABB Switzerland Ltd SemiconductorsTel +41 58 586 1419 wwwabbcomsemiconductors
Power and productivityfor a better worldtrade
Economicallywith ABBsemiconductors
09_PEE_Issue 4 200909_PEE_Issue 4 2009 21409 1409 Page 1
10 PCIM 2009
Issue 4 2009 Power Electronics Europe
ldquoThe power and energy sector hasnever been as important as it is todayand this is leading to promisingopportunities for engineers In anutshell we expect that the greatestpart of renewable energy resourceswill be interconnected to and gothrough at least one stage of powerelectronic conversion In this contextthere are three essential topics whichshould be at the forefront of ourminds namely lsquoefficiencyrsquo lsquoreliabilityrsquoand lsquocostsrsquordquo explains Prof Alfred RuferGeneral Conference Director PCIMEuropeHaving introduced the first day of
the conference in our April issue (seepages 18 ndash 23) we now cover theremaining program of the powerelectronics sessionsAs with the first day the second
conference day starts with a keynoteChristian Gerster headingBombardier transportationslsquoCompetence center High-PowerPropulsionrsquo in Zurich will give this
keynote on May 13 845 ndash 930 inthe Room Paris Current trends inrailway traction technology areaddressing objectives in three areasCost size and weight reductionenergy efficiency increase andenabling new functions Thepresentation will give an overview ofthese trends explaining the technicalconcepts used and showing variousexamples of recent developmentsAlso in Room Paris (1000 ndash
1200) PEErsquos Special Session lsquoWideBandgap Materials and Devicesrsquofeaturing papers from CreeInternational Rectifier InfineonTechnologies and Mitsubishi Electricwill be held after this keynote (seesidebar)
Innovative devices andcomponentsThe session lsquoInnovative Devices
and Componentsrsquo takes place inRoom London (1000 ndash 1200)
Hans-Guumlnter Eckel University ofRostock (Germany) will talk about thelsquoPotential of Reverse-ConductingIGBTs in Voltage Source InvertersrsquoReverse Conducting IGBTs integratethe functionality of the IGBT and thefree-wheeling diode into one chipThis reduces the current density in theIGBT mode and especially in thediode mode Therefore the outputcurrent of the inverter can beincreased This paper analyses howthe performance improvementdepends on the applicationconditions With RC-IGBT the outputpower of the inverter can beincreased from a few percent to morethan a factor of 2
Philippe Roussel YoleDeveloppement (France) willexamine the lsquoMarket opportunities ofSiC high-voltage devices in the railtransportation fieldrsquo Train makers haveperceived the Silicon Carbide (SiC)electronics as a highly valuabletechnology for their next-gen power
products However the current SiCindustry is focusing on the 600-1200V range applications to benefitfrom the huge potential market size33 65 and even 10kV+ havealready been demonstrated andtransportation industry is nowexpecting to find commercial productsin the very near future
Robin Kelley SemiSouth (USA)
will present an lsquoOptimized Gate Driverfor Enhancement-mode SiC JFETrsquo Thefirst normally-off SiC VJFET has beenused to replace MOSFETsIGBTs in avariety of applications As device
Higher Efficiency throughBetter Power Electronics
Itrsquos time again for PCIM Europe the leading European event for power electronics
ldquoThe power and energy sector has neverbeen as important as it is today and thisis leading to promising opportunities forengineersldquo says Alfred Rufer GeneralConference Director PCIM Europe
Despite the crisis in the financial sector PCIM 2009 from May 11 ndash 14 inNuremberg looks quite healthy with 260 exhibitors and 6500 visitors expectedThe conference will see about 600 delegates Power Electronics is by far themain part of PCIM 2009 since it covers 15 of the total 23 sessions
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 10
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
07_PEE_Issue 4 200907_PEE_Issue 4 2009 21409 1239 Page 1
Although the PV marketdoubled in 2008 in MW termsa contraction in shipments isanticipated in 2009 This willbe caused by the sudden drop-off in demand from Spainwith its newly implemented500MW cap This is likely toresult in a shortfall of some15 to 2GW in 2009 Althoughthis will in part be counter-balanced by growth in Italyand Eastern Europe thedramatic decline of theSpanish market will lead to an
overall drop in worldwideshipmentsldquoDespite credit issues most
major PV markets look healthyand are showing promise ofsignificant growth Howevereven if their countriesrsquo solarcapacities grow at the highlevels they saw in 2008 theycannot make up for theunprecedented contractionthat the Spanish market willsee this yearrdquo Analyst SamWilkinson commented ldquoManyanalysts are now predicting a
decline in PV module revenuesthis year IMS Researchhaving analysed the likelyperformance of individualcountries believes that MWshipments will also be lowerrdquoIn spite of this underlying
demand for PV remains veryhealthy long-term double-digit annual growth rates canbe expected The market islikely to see dramatic changesin the next few years with theemergence of newtechnologies such as micro-
inverters and the developmentof new and attractive regionalmarkets such as the US whichto date has made up a lowproportion of the overall globalmarketDifficulties in obtaining
financing will restrain USmarket growth this yearHowever in the medium-termit is anticipated to becomeone of the largest markets forPV
wwwimsresearchcom
PVMarket to Contract in 2009
8 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Mitsubishi Electric Corporation is the firstcompany in Japan which has received theInternational Railway Industry Standard (IRIS)certification in March 2009Mitsubishi Electric Corporation Power
Device Works in Fukuoka in Kumamoto andSun-A factory in Nijo have been successfullyaudited their research production andtesting facility of semiconductorcomponents Mitsubishi Electric Europe BVoffers a wide range of HV-IGBT andIntelligent Power Modules ShoichiNakagawa (Division Manager SemiconductorEuropean Business Group) appreciates thecertification as a proof of Mitsubishirsquosposition in the development and productionof semiconductor componentsThe IRIS quality standard is defined by the
UNIFE the European association for therailway supply industry The IRIS standardcovers project management (from designdevelopment to after sales services)management of tender bids changemanagement and also reliabilitymaintenance and safety levels of productsIRIS an extension of ISO 9001 is unique to the railway industry and has been widely asked for by all large railway manufacturers such as Alstom Bombardiertransportation Siemens and Ansaldobreda Mitsubishi has more than 40 years experience in developing and producing power semiconductors It has beensuccessfully directed the development of power semiconductor devices starting from current controlled GTO and Bipolar Darlington transistor to the first voltagecontrolled IGBT With its constant innovative research and development in this field Mitsubishi Electric has secured its top position
wwwmitsubishichipscom
IRIS Certification for MitsubishiElectric
According to IMS Researchrsquos latest analysis the global PV market is set to contract for the first time in2009 in terms of new installations
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 8
Let there be light
12 ndash 14 May 2009PCIM NurembergHall 12 Stand 408
ABB Switzerland Ltd SemiconductorsTel +41 58 586 1419 wwwabbcomsemiconductors
Power and productivityfor a better worldtrade
Economicallywith ABBsemiconductors
09_PEE_Issue 4 200909_PEE_Issue 4 2009 21409 1409 Page 1
10 PCIM 2009
Issue 4 2009 Power Electronics Europe
ldquoThe power and energy sector hasnever been as important as it is todayand this is leading to promisingopportunities for engineers In anutshell we expect that the greatestpart of renewable energy resourceswill be interconnected to and gothrough at least one stage of powerelectronic conversion In this contextthere are three essential topics whichshould be at the forefront of ourminds namely lsquoefficiencyrsquo lsquoreliabilityrsquoand lsquocostsrsquordquo explains Prof Alfred RuferGeneral Conference Director PCIMEuropeHaving introduced the first day of
the conference in our April issue (seepages 18 ndash 23) we now cover theremaining program of the powerelectronics sessionsAs with the first day the second
conference day starts with a keynoteChristian Gerster headingBombardier transportationslsquoCompetence center High-PowerPropulsionrsquo in Zurich will give this
keynote on May 13 845 ndash 930 inthe Room Paris Current trends inrailway traction technology areaddressing objectives in three areasCost size and weight reductionenergy efficiency increase andenabling new functions Thepresentation will give an overview ofthese trends explaining the technicalconcepts used and showing variousexamples of recent developmentsAlso in Room Paris (1000 ndash
1200) PEErsquos Special Session lsquoWideBandgap Materials and Devicesrsquofeaturing papers from CreeInternational Rectifier InfineonTechnologies and Mitsubishi Electricwill be held after this keynote (seesidebar)
Innovative devices andcomponentsThe session lsquoInnovative Devices
and Componentsrsquo takes place inRoom London (1000 ndash 1200)
Hans-Guumlnter Eckel University ofRostock (Germany) will talk about thelsquoPotential of Reverse-ConductingIGBTs in Voltage Source InvertersrsquoReverse Conducting IGBTs integratethe functionality of the IGBT and thefree-wheeling diode into one chipThis reduces the current density in theIGBT mode and especially in thediode mode Therefore the outputcurrent of the inverter can beincreased This paper analyses howthe performance improvementdepends on the applicationconditions With RC-IGBT the outputpower of the inverter can beincreased from a few percent to morethan a factor of 2
Philippe Roussel YoleDeveloppement (France) willexamine the lsquoMarket opportunities ofSiC high-voltage devices in the railtransportation fieldrsquo Train makers haveperceived the Silicon Carbide (SiC)electronics as a highly valuabletechnology for their next-gen power
products However the current SiCindustry is focusing on the 600-1200V range applications to benefitfrom the huge potential market size33 65 and even 10kV+ havealready been demonstrated andtransportation industry is nowexpecting to find commercial productsin the very near future
Robin Kelley SemiSouth (USA)
will present an lsquoOptimized Gate Driverfor Enhancement-mode SiC JFETrsquo Thefirst normally-off SiC VJFET has beenused to replace MOSFETsIGBTs in avariety of applications As device
Higher Efficiency throughBetter Power Electronics
Itrsquos time again for PCIM Europe the leading European event for power electronics
ldquoThe power and energy sector has neverbeen as important as it is today and thisis leading to promising opportunities forengineersldquo says Alfred Rufer GeneralConference Director PCIM Europe
Despite the crisis in the financial sector PCIM 2009 from May 11 ndash 14 inNuremberg looks quite healthy with 260 exhibitors and 6500 visitors expectedThe conference will see about 600 delegates Power Electronics is by far themain part of PCIM 2009 since it covers 15 of the total 23 sessions
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 10
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
Although the PV marketdoubled in 2008 in MW termsa contraction in shipments isanticipated in 2009 This willbe caused by the sudden drop-off in demand from Spainwith its newly implemented500MW cap This is likely toresult in a shortfall of some15 to 2GW in 2009 Althoughthis will in part be counter-balanced by growth in Italyand Eastern Europe thedramatic decline of theSpanish market will lead to an
overall drop in worldwideshipmentsldquoDespite credit issues most
major PV markets look healthyand are showing promise ofsignificant growth Howevereven if their countriesrsquo solarcapacities grow at the highlevels they saw in 2008 theycannot make up for theunprecedented contractionthat the Spanish market willsee this yearrdquo Analyst SamWilkinson commented ldquoManyanalysts are now predicting a
decline in PV module revenuesthis year IMS Researchhaving analysed the likelyperformance of individualcountries believes that MWshipments will also be lowerrdquoIn spite of this underlying
demand for PV remains veryhealthy long-term double-digit annual growth rates canbe expected The market islikely to see dramatic changesin the next few years with theemergence of newtechnologies such as micro-
inverters and the developmentof new and attractive regionalmarkets such as the US whichto date has made up a lowproportion of the overall globalmarketDifficulties in obtaining
financing will restrain USmarket growth this yearHowever in the medium-termit is anticipated to becomeone of the largest markets forPV
wwwimsresearchcom
PVMarket to Contract in 2009
8 MARKET NEWS
Issue 4 2009 Power Electronics Europe
Mitsubishi Electric Corporation is the firstcompany in Japan which has received theInternational Railway Industry Standard (IRIS)certification in March 2009Mitsubishi Electric Corporation Power
Device Works in Fukuoka in Kumamoto andSun-A factory in Nijo have been successfullyaudited their research production andtesting facility of semiconductorcomponents Mitsubishi Electric Europe BVoffers a wide range of HV-IGBT andIntelligent Power Modules ShoichiNakagawa (Division Manager SemiconductorEuropean Business Group) appreciates thecertification as a proof of Mitsubishirsquosposition in the development and productionof semiconductor componentsThe IRIS quality standard is defined by the
UNIFE the European association for therailway supply industry The IRIS standardcovers project management (from designdevelopment to after sales services)management of tender bids changemanagement and also reliabilitymaintenance and safety levels of productsIRIS an extension of ISO 9001 is unique to the railway industry and has been widely asked for by all large railway manufacturers such as Alstom Bombardiertransportation Siemens and Ansaldobreda Mitsubishi has more than 40 years experience in developing and producing power semiconductors It has beensuccessfully directed the development of power semiconductor devices starting from current controlled GTO and Bipolar Darlington transistor to the first voltagecontrolled IGBT With its constant innovative research and development in this field Mitsubishi Electric has secured its top position
wwwmitsubishichipscom
IRIS Certification for MitsubishiElectric
According to IMS Researchrsquos latest analysis the global PV market is set to contract for the first time in2009 in terms of new installations
p06-08 Market NewsqxdNew Market News Template 21409 0937 Page 8
Let there be light
12 ndash 14 May 2009PCIM NurembergHall 12 Stand 408
ABB Switzerland Ltd SemiconductorsTel +41 58 586 1419 wwwabbcomsemiconductors
Power and productivityfor a better worldtrade
Economicallywith ABBsemiconductors
09_PEE_Issue 4 200909_PEE_Issue 4 2009 21409 1409 Page 1
10 PCIM 2009
Issue 4 2009 Power Electronics Europe
ldquoThe power and energy sector hasnever been as important as it is todayand this is leading to promisingopportunities for engineers In anutshell we expect that the greatestpart of renewable energy resourceswill be interconnected to and gothrough at least one stage of powerelectronic conversion In this contextthere are three essential topics whichshould be at the forefront of ourminds namely lsquoefficiencyrsquo lsquoreliabilityrsquoand lsquocostsrsquordquo explains Prof Alfred RuferGeneral Conference Director PCIMEuropeHaving introduced the first day of
the conference in our April issue (seepages 18 ndash 23) we now cover theremaining program of the powerelectronics sessionsAs with the first day the second
conference day starts with a keynoteChristian Gerster headingBombardier transportationslsquoCompetence center High-PowerPropulsionrsquo in Zurich will give this
keynote on May 13 845 ndash 930 inthe Room Paris Current trends inrailway traction technology areaddressing objectives in three areasCost size and weight reductionenergy efficiency increase andenabling new functions Thepresentation will give an overview ofthese trends explaining the technicalconcepts used and showing variousexamples of recent developmentsAlso in Room Paris (1000 ndash
1200) PEErsquos Special Session lsquoWideBandgap Materials and Devicesrsquofeaturing papers from CreeInternational Rectifier InfineonTechnologies and Mitsubishi Electricwill be held after this keynote (seesidebar)
Innovative devices andcomponentsThe session lsquoInnovative Devices
and Componentsrsquo takes place inRoom London (1000 ndash 1200)
Hans-Guumlnter Eckel University ofRostock (Germany) will talk about thelsquoPotential of Reverse-ConductingIGBTs in Voltage Source InvertersrsquoReverse Conducting IGBTs integratethe functionality of the IGBT and thefree-wheeling diode into one chipThis reduces the current density in theIGBT mode and especially in thediode mode Therefore the outputcurrent of the inverter can beincreased This paper analyses howthe performance improvementdepends on the applicationconditions With RC-IGBT the outputpower of the inverter can beincreased from a few percent to morethan a factor of 2
Philippe Roussel YoleDeveloppement (France) willexamine the lsquoMarket opportunities ofSiC high-voltage devices in the railtransportation fieldrsquo Train makers haveperceived the Silicon Carbide (SiC)electronics as a highly valuabletechnology for their next-gen power
products However the current SiCindustry is focusing on the 600-1200V range applications to benefitfrom the huge potential market size33 65 and even 10kV+ havealready been demonstrated andtransportation industry is nowexpecting to find commercial productsin the very near future
Robin Kelley SemiSouth (USA)
will present an lsquoOptimized Gate Driverfor Enhancement-mode SiC JFETrsquo Thefirst normally-off SiC VJFET has beenused to replace MOSFETsIGBTs in avariety of applications As device
Higher Efficiency throughBetter Power Electronics
Itrsquos time again for PCIM Europe the leading European event for power electronics
ldquoThe power and energy sector has neverbeen as important as it is today and thisis leading to promising opportunities forengineersldquo says Alfred Rufer GeneralConference Director PCIM Europe
Despite the crisis in the financial sector PCIM 2009 from May 11 ndash 14 inNuremberg looks quite healthy with 260 exhibitors and 6500 visitors expectedThe conference will see about 600 delegates Power Electronics is by far themain part of PCIM 2009 since it covers 15 of the total 23 sessions
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 10
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
Let there be light
12 ndash 14 May 2009PCIM NurembergHall 12 Stand 408
ABB Switzerland Ltd SemiconductorsTel +41 58 586 1419 wwwabbcomsemiconductors
Power and productivityfor a better worldtrade
Economicallywith ABBsemiconductors
09_PEE_Issue 4 200909_PEE_Issue 4 2009 21409 1409 Page 1
10 PCIM 2009
Issue 4 2009 Power Electronics Europe
ldquoThe power and energy sector hasnever been as important as it is todayand this is leading to promisingopportunities for engineers In anutshell we expect that the greatestpart of renewable energy resourceswill be interconnected to and gothrough at least one stage of powerelectronic conversion In this contextthere are three essential topics whichshould be at the forefront of ourminds namely lsquoefficiencyrsquo lsquoreliabilityrsquoand lsquocostsrsquordquo explains Prof Alfred RuferGeneral Conference Director PCIMEuropeHaving introduced the first day of
the conference in our April issue (seepages 18 ndash 23) we now cover theremaining program of the powerelectronics sessionsAs with the first day the second
conference day starts with a keynoteChristian Gerster headingBombardier transportationslsquoCompetence center High-PowerPropulsionrsquo in Zurich will give this
keynote on May 13 845 ndash 930 inthe Room Paris Current trends inrailway traction technology areaddressing objectives in three areasCost size and weight reductionenergy efficiency increase andenabling new functions Thepresentation will give an overview ofthese trends explaining the technicalconcepts used and showing variousexamples of recent developmentsAlso in Room Paris (1000 ndash
1200) PEErsquos Special Session lsquoWideBandgap Materials and Devicesrsquofeaturing papers from CreeInternational Rectifier InfineonTechnologies and Mitsubishi Electricwill be held after this keynote (seesidebar)
Innovative devices andcomponentsThe session lsquoInnovative Devices
and Componentsrsquo takes place inRoom London (1000 ndash 1200)
Hans-Guumlnter Eckel University ofRostock (Germany) will talk about thelsquoPotential of Reverse-ConductingIGBTs in Voltage Source InvertersrsquoReverse Conducting IGBTs integratethe functionality of the IGBT and thefree-wheeling diode into one chipThis reduces the current density in theIGBT mode and especially in thediode mode Therefore the outputcurrent of the inverter can beincreased This paper analyses howthe performance improvementdepends on the applicationconditions With RC-IGBT the outputpower of the inverter can beincreased from a few percent to morethan a factor of 2
Philippe Roussel YoleDeveloppement (France) willexamine the lsquoMarket opportunities ofSiC high-voltage devices in the railtransportation fieldrsquo Train makers haveperceived the Silicon Carbide (SiC)electronics as a highly valuabletechnology for their next-gen power
products However the current SiCindustry is focusing on the 600-1200V range applications to benefitfrom the huge potential market size33 65 and even 10kV+ havealready been demonstrated andtransportation industry is nowexpecting to find commercial productsin the very near future
Robin Kelley SemiSouth (USA)
will present an lsquoOptimized Gate Driverfor Enhancement-mode SiC JFETrsquo Thefirst normally-off SiC VJFET has beenused to replace MOSFETsIGBTs in avariety of applications As device
Higher Efficiency throughBetter Power Electronics
Itrsquos time again for PCIM Europe the leading European event for power electronics
ldquoThe power and energy sector has neverbeen as important as it is today and thisis leading to promising opportunities forengineersldquo says Alfred Rufer GeneralConference Director PCIM Europe
Despite the crisis in the financial sector PCIM 2009 from May 11 ndash 14 inNuremberg looks quite healthy with 260 exhibitors and 6500 visitors expectedThe conference will see about 600 delegates Power Electronics is by far themain part of PCIM 2009 since it covers 15 of the total 23 sessions
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 10
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
10 PCIM 2009
Issue 4 2009 Power Electronics Europe
ldquoThe power and energy sector hasnever been as important as it is todayand this is leading to promisingopportunities for engineers In anutshell we expect that the greatestpart of renewable energy resourceswill be interconnected to and gothrough at least one stage of powerelectronic conversion In this contextthere are three essential topics whichshould be at the forefront of ourminds namely lsquoefficiencyrsquo lsquoreliabilityrsquoand lsquocostsrsquordquo explains Prof Alfred RuferGeneral Conference Director PCIMEuropeHaving introduced the first day of
the conference in our April issue (seepages 18 ndash 23) we now cover theremaining program of the powerelectronics sessionsAs with the first day the second
conference day starts with a keynoteChristian Gerster headingBombardier transportationslsquoCompetence center High-PowerPropulsionrsquo in Zurich will give this
keynote on May 13 845 ndash 930 inthe Room Paris Current trends inrailway traction technology areaddressing objectives in three areasCost size and weight reductionenergy efficiency increase andenabling new functions Thepresentation will give an overview ofthese trends explaining the technicalconcepts used and showing variousexamples of recent developmentsAlso in Room Paris (1000 ndash
1200) PEErsquos Special Session lsquoWideBandgap Materials and Devicesrsquofeaturing papers from CreeInternational Rectifier InfineonTechnologies and Mitsubishi Electricwill be held after this keynote (seesidebar)
Innovative devices andcomponentsThe session lsquoInnovative Devices
and Componentsrsquo takes place inRoom London (1000 ndash 1200)
Hans-Guumlnter Eckel University ofRostock (Germany) will talk about thelsquoPotential of Reverse-ConductingIGBTs in Voltage Source InvertersrsquoReverse Conducting IGBTs integratethe functionality of the IGBT and thefree-wheeling diode into one chipThis reduces the current density in theIGBT mode and especially in thediode mode Therefore the outputcurrent of the inverter can beincreased This paper analyses howthe performance improvementdepends on the applicationconditions With RC-IGBT the outputpower of the inverter can beincreased from a few percent to morethan a factor of 2
Philippe Roussel YoleDeveloppement (France) willexamine the lsquoMarket opportunities ofSiC high-voltage devices in the railtransportation fieldrsquo Train makers haveperceived the Silicon Carbide (SiC)electronics as a highly valuabletechnology for their next-gen power
products However the current SiCindustry is focusing on the 600-1200V range applications to benefitfrom the huge potential market size33 65 and even 10kV+ havealready been demonstrated andtransportation industry is nowexpecting to find commercial productsin the very near future
Robin Kelley SemiSouth (USA)
will present an lsquoOptimized Gate Driverfor Enhancement-mode SiC JFETrsquo Thefirst normally-off SiC VJFET has beenused to replace MOSFETsIGBTs in avariety of applications As device
Higher Efficiency throughBetter Power Electronics
Itrsquos time again for PCIM Europe the leading European event for power electronics
ldquoThe power and energy sector has neverbeen as important as it is today and thisis leading to promising opportunities forengineersldquo says Alfred Rufer GeneralConference Director PCIM Europe
Despite the crisis in the financial sector PCIM 2009 from May 11 ndash 14 inNuremberg looks quite healthy with 260 exhibitors and 6500 visitors expectedThe conference will see about 600 delegates Power Electronics is by far themain part of PCIM 2009 since it covers 15 of the total 23 sessions
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 10
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
Wersquore DrivenThe same things that drive you drive us Were passionate about exploring new ways to make testing faster
easier more accurate and more cost-efficient
Building Blocks Thatrsquos The IdeaBehind Our Subampabilitytrade ConceptWere building amplifiers that can grow in poweras your needs change
Adaptable Constantly ChangingThe TGAR system for automotive transient testingcan handle most existing specifications and adapt tomost new specifications
WOWAR test systems like the AS40000 canperform entire tests with just the pressof a few buttons
Get Ready For The Next Wave In EMI ReceiversThe CISPR approved CER2018A Receiver is a complete EMItest solution with continuous coverage from 9 kHz to 18 GHz It exceeds CISPR 16-1-1 Ed 2 October 2007
One Company Infinite Solutions
Your Test Is Only As GoodAs The Sum Of Its PartsAR offers accessories that are power andfrequency matched to our amps Andtheyre specially designed to make testingmore efficient
PowerhouseRF and Microwave PowerAmplifiers up to 50000 wattsdc ndash 45 GHz
Our Conducted Immunity Test Systems Stand AloneFor ease of use accuracy
flexibility reliability three models for RFConducted Immunity test to most CE MIL-STDand Automotive standards
Wersquove Seen The FutureAnd Wersquore In ItAR will always be several stepsahead with amps and accessoriesthat meet the changing power ampfrequency needs
Survival Of The FittestAR amps stand up to thetoughest conditions with infinite
VSWR tolerance
Radiant ArrowsOur unique ldquobent-elementrdquo RadiantArrows are about 60 smaller thanstandard log periodic antennas Wealso offer high gain horn antennas upto 50 GHz
Starprobesreg
ARrsquos highly advanced batteryand laser powered field probescover 5 kHz ndash 60 GHz
AR Modular RF Is A Leading Supplier Of Booster AmplifiersFor Tactical Military RadiosOur battle-tested booster amplifiers cover the broadestfrequencies and wave forms Were also supplying some of the most high efficiency modules for electronic warfare
A Wide Range of Modules and Amplifier Systems AR Modular RF provides customer-specific designs andmodifications of our products to meet the most demanding requirements
ar europe
National Technology Park Ashling Building Limerick Ireland bull 353-61-504300 bull wwwar-europeieCopyright copy 2008 AR The orange stripe on AR products is Reg US Pat amp TM Off
11_PEE_Issue 4 200911_PEE_Issue 4 2009 21409 1420 Page 1
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
Natural match
Features+15V-10V gate voltage3W output power20A gate current80ns delay timeDirect and half-bridge modeParallel operationIntegrated DCDC converterElectrical isolation for 1700V IGBTsPower supply monitoringShort-circuit protectionFast failure feedbackSuperior EMC
2SP0320 is the ultimate driver platform for PrimePACKTM IGBT modules As a member of the CONCEPT Plug-and-play driverfamily it satisfies the requirements for optimized electrical performance and noise immunity Shortest design cycles are achieved without compromising overall system efficiency inany way Specifically adapted drivers are available for all module types A direct paralleling option allows integrated inverter design covering all power ratings Finally the highlyintegrated SCALE-2 chipset reduces the component count by 80 compared to conventional solutions thus signifi-cantly increasing reliability and reducing cost The drivers areavailable with electrical and fiberoptic interfaces
PrimePACKTM is a trademark of Infineon Technologies AG Munich
2SP0320
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
12_PEE_Issue 4 200912_PEE_Issue 4 2009 22409 0910 Page 1
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
PCIM 2009 13
Power Electronics Europe Issue 4 2009
acceptance grows developers willrequire optimized drive circuits thatyield the best possible switchingresults This paper details the gatecharacteristics of enhancement-modeSiC JFET and presents an optimal gatedriver for driving the device in a half-bridge circuit Noise-immunity for thelow-threshold device in a high-sideposition will be addressed
Roman Karmazin Siemens(Germany) will introduce lsquoNewmaterials for integrated inductorsrsquoPower electronic inductors of severalmicroH inductances have been integratedinto ceramic multilayer circuit boardsby use of ferrite tapes in lowtemperature cofired ceramic (LTCC)technology
Markus Billmann Fraunhofer IISB(Germany) will present lsquoExplosionproof housings for IGBT module basedhigh power inverters in HVDCtransmission applicationrsquo This paperevaluates the measures that can betaken to guarantee that no particlesand no plasma clouds give impact tonearby inverter stages for energies inthe range of several ten kilojoulesSeveral protection strategies arediscussed Soft coated as well as hardmoulded IGBT modules areconsidered Pictures from high speedvideo sequences show the influenceand benefits of different protectionmeasures
Power electronics in automotiveand tractionThe session lsquoPower Electronics in
Automotive and Tractionrsquo comes inparallel in Room Amsterdam alsofeaturing five papers
Mathias Baumann Daimler(Germany) will present a lsquoComparisonof different cooling systems for powermodules in automotive applicationrsquo AShowerPower cooler of the newestgeneration is compared to a standarddiamond-shaped pin fin cooler Waterand a water-glycol-mixture (40 vol-glycol) have come into operation ascooling agents Particular attention ispaid to the caused pressure drop theheat transfer coefficient and thethermal resistance respectively againstthe flow rate Furthermore the heatdistribution within the power moduleis investigated
Andre Christmann Infineon
Technologies (Germany) will talkabout the lsquoReliability of PowerModules in Hybrid Vehiclesrsquo Toevaluate the necessarily thermalpower cycle stability of a powermodule in a vehicle a driving cycleprofile is used to calculate the thermalreliability requirements This paperdiscusses the reliability requirementsdue to active and passive thermalstress on various joints such as solderor bond joints resulting by usingdifferent connections of a powermodule to varied cooling systems
Akira Nishiura Fuji Electric DeviceTechnology (Japan) introduceslsquoEvolved life of IGBT modules suitablefor electric propulsion systemrsquo TheIGBT module for automotivepropulsion the lifetime is requiredequal to the car (150000 miles in15years) The parts which composethe IGBT module are joined by solderThe lifetime of the module is reducedbecause of the crack in solder layerswhich occurs by repetitive temperatureswings From the result of our studythe solder which contains tin andantimony is suitable for automotiveapplication The developed solder hasmore than 20000 cycle lifetime in thethermal fatigue test
Eric Fernandez CEA Grenoble(France) reveals lsquoExperience feedbackon electric vehicles - battery impactrsquoNearly 10000 electric vehiclesappeared the French car fleet Themain problem of reliabilityencountered on these vehicles comesfrom the batteries and their costimpact The high price and the lownumber of cycles cause a kilometriccost two to three times superior thanwith a thermal vehicle The CEA ofGrenoble invests itself in themonitoring of electric vehicles andreplaces the Ni-Cd battery in a CitroeumlnAX by a high security Lithium IronPhosphate one
Daniel Chatroux from CEAGrenoble refers to the lsquoToyota PRIUSbattery in microcycle mode cost ofuse divided by fiversquo The goal of thispresentation is to summarize the keypoints of the Toyota PRIUS hybridsynergy drive technology and to focuson the impact of microcycle mode onthe battery cost of use This hybridtechnology is first a high efficiencyelectrical continuous variable
transmission So the gasoline engineis used only in the high efficiency zoneto have low fuel consumptions Themicrocycle mode provides a cost ofbattery use divided by five Itrsquoscompetitive with gasoline one
Vehicle to gridWednesday afternoon (1400 ndash
1600) will start in Room Paris withthe Round Table lsquoVehicle to Gridrsquoorganised by ECPE (European Centerfor Power Electronics)Plug-in hybrid electric vehicles
(PHEVs) which combine todayrsquoshybrid automotive technology withlarger battery systems that can berecharged from the electrical grid areannounced to enter the market in2010 At the same time full electriccity cars using lithium-ion energystorage technology enabling a drivingrange of 100 ndash 250km will beavailable Fleet tests are running inseveral European cities eg in Londonand Berlin Recently four GermanFederal Ministries have launched alsquoNational Development Plan on ElectricMobilityrsquo announcing a plan to put amillion plug-in cars on the roads by2020This move to a more electric
mobility will challenge the electricalgrids An infrastructure is needed tocharge the electric vehicles from thegrid which has to supply the energyfor this additional load On the otherside it is discussed to make thedistributed energy storage capacity ofthese EVs available for the grid while
increasing the share of fluctuatingrenewable energy sources Powerelectronics together with informationand communication technologies isthe key to meeting these challengesproviding the bidirectional flow ofenergy and information between theelectric car and the grid
High power devicesHigh Power Devices are the subject
of the parallel session in RoomLondon covering four papers
Horst Gruening Mitsubishi ElectricCorp (Japan) has entitled his paperlsquoExtending 6-inch 6kV-6kA-GCT turn-off to Tj = ndash20ordmCrsquo Turn-off operation ofa standard high speed 6in GCT isinvestigated towards low temperatureTj = -20ordmC Due to improvements ofthe gate drive unit fully rated gate turn-off is achieved GCT turn-off speedsup but dynamic avalanche clampingenhances to cut dangerous over-voltage spikes GCT turn-off further isinvestigated by mixed mode devicesimulation under dynamic avalancheclamping at low temperature someGCT segments carry current for aconsiderably longer amount of timethan others
Ayumi Maruta also from MitsubishiElectric will introduce a lsquo2500A1200V Dual IGBT modulersquo The2500A1200V dual IGBT module isdeveloped for industrial use Smallinternal inductance wiring from P to Nterminal is developed for this largecurrent device The chip layout isconsidered for liquid cooling The base
The conference program features 15 power electronics sessions of the total 22 sessions
INDU C TORS CHOKESFROM POWDER COMPOSITE MATERIA LS
+ 49 (0 )7 12 2 82598 -0 wwwHKRw eb d e
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 13
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
14 PCIM 2009
Issue 4 2009 Power Electronics Europe
plate piece of the package isconsidered to be a common part tobe able to apply some other size andcircuit in future And the power loss isreduced from 5th generation by using6th generation IGBT chip and newdeveloped diode chip for 6thgeneration IGBT
Liutauras Storasta ABBSwitzerland introduces a lsquo4500V IGBTHiPak Module rated at 1200A a NewMilestone with SPT+ Technologyrsquo Anewly developed 4500V and 1200AHiPak module having the highestcurrent rating available today in themarket for this voltage class will bepreseted The module employs SPT+IGBT chips with exceptionally lowlosses and high Safe Operating Area(SOA) The use of SPT+ IGBT chips inthe HiPak module allowed higherpower densities in the module to beachieved
Marta Cammarata ABBSwitzerland will present a lsquo1200VSPT+ IGBT and Diode chip-set for highDC-link Voltage applicationsrsquo A new1200V SPT+ IGBT and Diode chip-setwhich has been mainly developed forapplications demanding higher DC-linkvoltages while operating under highertemperature conditions of up to 175degCwill be introduced In addition themain focus was to achieve higherreliability performance whilemaintaining exceptional electricalperformance in terms of low lossesand controllable switchingcharacteristics
Renewable energy systems andenergy storageThe parallel Power Quality session
in Room Amsterdam covers threepapers
Benjamin Sahan University ofKassel (Germany) will receive the BestPaper Award sponsored by PowerElectronics Europe (see sidebar) forhis paper lsquoPhotovoltaic convertertopologies suitable for SiC-JFETsrsquo SiCsemiconductors offer very interestingcharacteristics and are considered as afuture perspective in photovoltaicconverter technology The vertical JFETis an example of a very promisingdevice mainly due to its relativestructural simplicity Nevertheless theinherent normally-on characteristiccalls for specially tailored topologiesthat will be presented and discussed
Engin Ozdemir Kocaeli University(Turkey) will talk about a lsquoHigh-Performance Grid-Connected Single-Phase Residential PV PowerGeneration Systemrsquo This study
develops a high-performance grid-connected single-phase residentialphotovoltaic power generation systemThe PV power generation system iscomposed of a step-up converter anda two-level pulse width modulationinverters for mains and critical loadsThe inverter output waveforms havevery little harmonics and the efficiencyis also high Experimental results aregiven to verify the validity and reliabilityof the residential PV power generationsystem
Davide Azzoni LEM SA(Switzerland) introduces lsquoAn innovativeLow-Cost High Performances CurrentTransducer for Battery MonitoringApplications Prototype PreliminaryResultsrsquo The current measurementrange in battery monitoringapplications can vary from 10mA up to1000A Todayrsquos available currentsensors are not well adapted to workin this very large domain A newcurrent sensor is presented in thispaper which makes use of themagnetic field created by the batterycurrent through a saturableinductance By evaluating thesaturation times and the inductanceload current it is possible to accuratelymeasure the battery current in thewhole range
Integrated modulesThe final Wednesday session in
Room Kairo features three papersTakuya Yamamoto Fuji Electric
Device Technology (Japan) introduceslsquoHigh-Power IGBT Modules forIndustrial Usersquo The new High-PowerIGBT Modules for industrial use are
described in this paper The moduleline-up consists of 1200 and 1700Vvoltage classes three types ofpackages and current ratings of 600to 3600A among a total of 14 typesof products This High-Power IGBTModules have been developed basedon the concepts of the lsquolow thermalimpedancersquo and lsquohigh environmentalperformancersquo
Wolfgang Frank InfineonTechnologies (Germany) presents lsquoAnew intelligent power module forhome appliancesrsquo This paperdiscusses a new approach of anintelligent power module in terms ofthermal design and form factor Thenew module incorporates the newlyintroduced reverse conducting IGBTtechnology and combines it with apackage technology which allows asignificant shrinking of its dimensionsThis paper presents measurements ofthis module in a washing machineverifying the projected simulationresults
Masahiro Kato Mitsubishi ElectricCorporation (Japan) introduces lsquoNewTransfer Molding PFC series withCompact Packagersquo This paper presentsa new version mini Dual In-linePackage Power Factor Correction(DIPPFC) developed by MitsubishiElectric for the high power airconditioner and general inverter useIn new DIPPFC series low thermalresistance was realized by using theinsulation sheet structure with highheat dissipation Because of the lowthermal resistance package size ofmini DIPPFC is reduced comparedwith the conventional large DIPPFC
and input AC amperage rating isexpanded up to 30AThe second PosterDialogue
Session covering 45 papers will beheld from 1600 ndash 1700 on theGround Floor Entrance concluding thesecond day of the PCIM 2009conference
Energy efficiency in data centresAndreacute Rouyer director of
Standardization amp Environment for theCritical Power and Cooling Servicesbusiness unit at Schneider ElectricAPC will give the third keynote inRoom Paris on Thursday May 14 845ndash 930 He provides an update oncurrent status with Energy Efficiency inData Centres on the mainorganisations involved and on therecommendations for improvingEnergy Efficiency in the future It willalso address the challenges that thebusiness stakeholders will have to facein the next few years
Reliability and coolingThis session on Thursday from
1000 ndash 1200 in Room Paris consistsof five papers dealing with reliabilityconcerns of power modules
Steacutephane Lefebvre from SATIE(France) the winner of the Best PaperAward at PCIM 2008 will talk aboutlsquoThermal fatigue and failure of powerdevice substratesrsquo His researchactivities are focused on powersemiconductor devices especially onlifetime limitations at high temperaturefor automotive or avionics applicationsor under severe working conditions
Thomas Hunger Infineon
The postersessions on theTuesday andWednesday willcover more than60 papers
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 14
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
PCIM 2009 15
Power Electronics Europe Issue 4 2009
Technologies (Germany) coverslsquoReliability of Substrate Solder Jointsfrom Power Cycling Testsrsquo The life-timeof the solder joint between base-plateand substrate is usually tested bythermal cycling In the application thedevice is actively heated This iscommonly tested via power cyclingThose tests are utilized as effectivethermal cycling for the solder joints Akey factor is the prediction of thesolder temperature during powercycling The solder joint life-times arecompared for both test set-ups at lowtemperature swings Details of thetests are studied numerically
Tilo Poller Chemnitz University ofTechnology (Germany) concentrateson lsquoThermal-Mechanical Behaviour ofSolder Layers in Power Modulesrsquo Afterpower cycling break-up of solderlayers below the middle of the powerchip is found This contradicts modelsof crack propagation starting at theedge of the device FEM-simulations oftemperature distribution and resultingmechanical deformation show amaximum of mechanical stress in themiddle region of the device Thisstress will initiate micro cracks whichdestroy the connections
Ronald Eisele University of AppliedSciences Kiel (Germany) focuses onlsquoReliable Chip Contact JoiningrsquoAssembly techniques and concepts fortop chip contacts are presented in thispaper Power cycling tests showsignificant improvements in theachievable lifetime compared toconventional Al-wire bonding Thedemonstrator and test object is adiode power module which is typicallyused in welding applications
Erich Neubauer Austrian ResearchCenters talks about lsquoMaterialdevelopment of diamond basedcomposites for cooling of future highperformance electronicsrsquo Newmaterials with tailored thermophysicalproperties will be one solution to solvethermal management problems offuture generations of electronic powermodules as well as a possibility toincrease the reliability of existingelectronic systems This paper reportsthe material properties of Cu Al andAg-diamond composites with thermalconductivities in the range 300 toalmost 700WmK in combination witha coefficient of thermal expansion inthe range of 6 to 10ppmKControl and drive strategies inpower convertersThis parallel session in Room
London features also five papersSimon Effler University of Limerick
(Ireland) investigates lsquoCurrent Sharingand Phase Alignment for IndependentParallel Power Suppliesrsquo The trend innext-generation low-voltage high-current DCDC converters will lead tomodular scalable solutions which candeliver power efficiently utilizing multi-phase solutions This paper details anew approach to introduce moreadvanced control features like currentsharing and phase dropping whichimprove the efficiency of the overallsystem The system does not requirecommunication signals between theindividual controllers and is thereforefully scalable
Daniel Domes InfineonTechnologies (Germany) introducesan lsquoIGBT-Module integrated Currentand Temperature Sense Featuresbased on Sigma-Delta ConverterrsquoSystem integration is one of themarket driving issues in powerelectronics In this paper theintegration of precise shunts into IGBTmodules are compared to on-IGBT-chip current sense functionalityTemperature measurement via NTC-resistor on DBC-level or on-IGBT-chipintegrated temp-sense-diodes will betreated as well Further processing ofthe low voltage sense signals is doneby sigma delta converter including afunctional isolation barrier by CorelessTransformer Technology (CLT)
Tomas Reiter BMW Group(Germany) focuses onlsquoImplementation Aspects of theObserver based PWM Dead TimeOptimization for DCDC-Convertersrsquo Inhard-switching DCDC-converters withsynchronous rectifiers the method ofthe observer based PWM dead timeoptimization can be used to reducepower losses Parameters for theoptimization algorithm and generalconditions for the method are derivedfrom the analysis of PWM dead timesdependent switching lossesExperimental results are used to verifythe proposed models approximationsand assumptions
Sascha Pawel CT-ConceptTechnologie (Switzerland) will talk onlsquo1700V Planar Transformers for HighPower Gate Drivesrsquo His paperdiscusses the development processfor a novel HV insulation topology HVinsulation is established by the PCBusing planar transformers Extensivetesting has been performed to accessthe performance of the planarinsulation topology The systemrsquosreliability has been investigated usingaccelerated testing for thermal aginggrowth of conductive anodic filaments
(CAF) and mechanic shockDavide Respigo International
Rectifier (Italy) introduces a lsquoGroundfault detector IC for complete shortcircuit protection in motor driveapplicationsrsquo An integrated faultdetector in junction isolated highvoltage technology The ICrsquos goal is thedetection of different faults typical inmotor drives The fault is detectedsensing a shunt on the inverter DC+bus and communicated to a DSP or agate-driver using an open drain pinThe IC is simple inexpensive and canbe used with the inverter DC+ bus upto 600V Moreover it is self-suppliedand allows to set the detectionthreshold for the over currentMeasurements are reported
Software tools and applicationsThis parallel morning session
consists of three papersLawrence Meares Intusoft (USA)
has entitled his paper lsquoAutomatingDigital DSP Design using augmentedspice simulationrsquo A new Z-Delaymodel coupled with a matrix solutionbased on SPICE simulation providesthe core for automatic DSP codegeneration An example using aKalman filter plant model shows howincreased software complexity can beused to reduce hardware cost
Romeo Letor STMicroelectronics(Italy) focuses on lsquoUser-friendly andeffortless electro-thermal simulation ofpower actuators boards with standardsoftware officersquo His paper describes asimplified model with distributedconstant parameters embedded inoffice EXCEL The paper explains themethod based on the application ofthe semi-empirical equations thatdescribe heat propagation and howdistributed constant parameters canbe used for simplified thermalmodelling Calculation resultscompared with junction temperaturemeasurements and infrared analysison practical application examplesdemonstrate that precise calculation ofthe junction temperature can beperformed with this tool so savingtime consuming resources User-friendly graphic interfacesimplemented on a spreadsheet arealso demonstrated
Holger Ross dSPACE (Germany)will talk about lsquoRapid ControlDevelopment for Mobile BrushlessElectric Motorsrsquo Because of their idealproperties electronically commutatedbrushless electric motors (EC motors)are also being used more often innonstationary power-line-independent
application fields such as automotivesA new in-vehicle capable rapid controlprototyping (RCP) solution fromdSPACE makes it possible to validatecommutation methods and controlstrategies for motor control on realdevices without special programmingknowledge and at an early stage
Thermal management andpackagingThe first Thursday afternoon session
in Room Paris covers four papers onpower module technology
Uwe Scheuermann SemikronElektronik (Germany) reports onlsquoInvestigations on the VCE(T)-Methodto Determine the JunctionTemperature by Using the Chip Itselfas Sensorrsquo Using the temperaturedependence of the diffusion voltage ofa pn-junction (VCE(T)-method)permits the chip to be used as atemperature sensor and thus allows todetermine the Tvj without mechanicalobstruction of the device package Thepresented investigation analyses anactively heated modern IGBT chip witha pronounced lateral temperatureprofile The simulation proves that theTvj determined by the VCE(T)-methodis equivalent to the area-related meantemperature of the chip
Waleri Brekel InfineonTechnologies (Germany) focuses onlsquoTime Resolved In Situ TVJMeasurements of 65kV IGBTs duringInverter Operationrsquo Although thedevice temperature is one of the mostcritical parameters in the dimensioningof an inverter experimental studiesfocusing on TVJ in running inverter arescarcely found In this work thefeasibility of four different practicalmethods is compared Special focus isset on routines with a high timeresolution that enable tracking thetime-dependent-temperature duringone period of the sinusoidal outputcurrent Details of the procedures areexplained and compared withsimulations
Yoshitaka Nishimura Fuji ElectricDevice Techonology (Japan) coverslsquoThermal management of IGBTmodule systemsrsquo His paper presentsthe thermal management of IGBTmodule systems Among IGBT modulematerials thermal compound has thelowest thermal conductivity Sothermal compound thicknessinfluences IGBT chip junctiontemperature This time weinvestigated the method to thin thecompound between IGBT module andcooling fin Using a newly designed
p10-19 PCIM PreviewqxdNew Market News Template 22409 0859 Page 15
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
16 PCIM 2009
Issue 4 2009 Power Electronics Europe
metal mask we have achieved toreduce the quantity of thermalcompound to about half and reducethe thermal resistance of IGBT modulesystemsGuo-Quan Lu Virginia Tech (USA)
will talk about lsquoLarge-area (gt1cmsup2)Die-attach by Low-temperatureSintering of Nanoscale Silver PastersquoThis paper describes the developmentof a lead-free low-temperature joiningtechnique for bonding large-areachips for high temperatureapplications The technique is enabledby a nanoscale silver paste which canbe sintered at temperatures below275degC without pressure But forattaching large-area chips it isreported that a low pressure less than5MPa was needed to get strongbonding strength and uniformmicrostructureMedium and high frequencyconvertersThis is the final PCIM 2009 session
on power electronics in Room Londonwith four papersFrancisco Javier Azcondo Univeristy
of Cantabria (Spain) introduces alsquoFlexible power architecture for highquality welding applicationrsquoArchitecture of multiple two-phaseresonant converters in current sourcemode is proposed to generate apower supply for arc-weldingapplications Output current can betuned from 15 to 600A Currentshape can be continuous or pulsatingat different frequencies from 10Hz to10kHz and pulsewidths from 25 to75 Current control is performed bytuning the overlap between the eachphase control signals Arc strike isachieved at low voltage with an initialswitching frequency sweep
Giuseppe Griffero SAET Group(Italy) describes lsquoA novel modularpower supply system for inductionheating applicationsrsquo Some remarkswill be presented as for the topology
used reliable for induction hardeningand induction tube welding and forthe control technique Someconsiderations about the loadmatching circuit will be proposedtogether with some novel solutionsExperimental results related to recentinstallations will be presented anddiscussed in comparison with othersolutions currently available in themarket
Christian Moumlszliglacher InfineonTechnologies Austria will give a paperon lsquoImproving efficiency ofsynchronous rectification by analysis ofthe MOSFET power loss mechanism inhard switched topologiesrsquo Driven fromthe 80 PLUS program the overallsystem efficiency in SMPS is targetingthe 90 line Reaching this efficiencylevel is therefore only possible withsynchronous rectification But forachieving ideal switching behavior andhigh efficiency the power lossmechanism of a SR MOSFET has to be
well understood Therefore this paperis analysing the turn-off process of theSR MOSFET and proposes a simplemodel for calculating the power lossesto optimize system efficiency
Jeacutereacutemy Martin PEARL-ALSTOMTransport (France) will present thefinal paper on power electronicsentitled lsquoCharacterisation of IGBTsand IGCTs in Soft CommutationMode for Medium FrequencyTransformer Application in RailwayTractionrsquo A specific test bench isinstalled at PEARL laboratory with aview to characterise 65kV IGBTs and65kV IGCTs in soft commutationmode This test bench enables tostudy the switching losses theconduction losses and the frequencylimit of these components In thispaper characterization results ofIGBTs and IGCTs in ZVS mode arepresented
wwwpcimde
And the Winner isPower Electronics Europe has sponsored and will hand over for thesecond time the Best Paper Award at the PCIM 2009 openingceremony The awardee will be invited to participate at PCIM China2010 including flight and accomodationThe best paper has been selected by the PCIM Conference
directors and the winner is Benjamin Sahan from the University ofKassel (Germany) with the paper lsquoPhotovoltaic converter topologiessuitable for SiC-JFETsrsquoSilicon Carbide (SiC) material is characterised by electrical field
strength almost 9 times higher than normal Si allowing the designof semiconductor devices with very thin drift layers and as aconsequence low on-stateresistance and reduced switchinglosses In other words suchcharacteristic can be translatedinto the possibility of operatingat higher blocking voltages withreduced lossesThese characteristics are
especially interesting whenapplied in photovoltaicconverters There efficiency isstill one of the main marketdrivers in the industry Todayenhancing the PV inverterefficiency by 1 could yield up to45eurokWphellip97eurokWp additionalprofit after ten years ofoperation For this reason PVinverter technology rapidlyimproved during the last decadeas a peak efficiency of 99 willsoon be achieved From thatpoint on further increase of
efficiency is not cost- effective anymore As a future trend SiC offersthe possibility of operating at higher switching frequencies withoutsignificant prejudice on the efficiency which leads to the possibilityof reducing the size of passive components and consequently thecost and volume of the circuit However since SiC characteristics arequite different from conventional semiconductors new designstrategies are required Besides SiC basics this paper presents a1kW laboratory prototype inverter which was constructed to furtherevaluate the performance of SiC-JFETs A fairly high efficiency usingjust one JFET was measured which gives a positive outlook for itsfuture application in PV systems
Test board of the1kW SiC IndirectCurrent SourceInverter
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 16
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
17_PEE_Issue 4 200917_PEE_Issue 4 2009 22409 0926 Page 1
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
reg
21 Napier Place Wardpark North Cumbernauld Scotland G68 0LL+441236730595 Fax +441236730627
RoHSCCOOMMPPLLIIAANNTT
IC reference designs are agood start But what ifyou want to optimize thedriver inductor for sizeefficiency or price
Or evaluate newerhigh performance partsthat werenrsquot availablewhen the reference design was created
Then yoursquoll want to check out the new LED
Design Center on theCoilcraft web site Itrsquos filledwith interactive tools that letyou compare hundreds of in-ductors for all LED driver to-pologies including SEPIC
To start yoursearch for the per-
fect LED driver inductor mouseover to wwwcoilcraftcomLED
Our new LED Design Center lets youd Search by IC to find all matching inductorsd Compare DCR current rating size and price
d Analyze all core and winding lossesd Request free evaluation sampleswwwcoilcraftcomLED
How to pick the perfect inductorfor your LED driver application
818_PEE_Issue 4 200918_PEE_Issue 4 2009 22409 0906 Page 1
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
These are exciting times for power electronics withtechnological breakthroughs at the horizon namely siliconcarbide (SiC) and gallium nitride (GaN) for powersemiconductors Here Power Electronics Europe is at theforefront by organising and chairing a session on lsquoWide BandgapMaterials and Devicesrsquo to be held on Wednesday (May 131000-1200 Room Paris)
ldquoThe main session within Power Electronics is the subject WideBandgap Materials and Devicesldquo stated PCIM Co-Chair UweScheuermann Invited speakers from well recognised companiessuch as Cree Infineon Technologies International Rectifier andMitsubishi Electric will present their view on ongoing innovationsThe bottom line can be summarised that diodes with almost noreverse recovery losses are here and switches are already insampling Thatrsquos what the power electronics designer is waitingfor a pair of quasi loss-less switch (JFET MOSFET) andfreewheeling diode (as described ie by the PCIM 2009 best paperand the first keynote)
John W Palmour CTO of Cree (USA) has entitled his paperlsquoSilicon Carbide Switching Devices Pros and Cons for MOSFETsJFETs and BJTsrsquo The most commonly pursued switches in SiC arecompared in terms of device performance reliability and cost ofmanufacturing The DMOSFET structure offers the most featuresbut it can be more expensive to manufacture Normally-on JFETscan be manufactured at a lower cost and provide excellentcharacteristics but will have difficulty winning wide acceptancein the power electronics field Normally-off JFET devices can alsobe produced at a lower cost but sensitivity to materials andprocessing requirements may result in low yields which cannegate the lower fabrication cost and provide relatively poorperformance compared to other structures BJTs offer goodperformance and lower cost of manufacturing but devicestability is yet to be resolved Detailed analysis and comparisonare presented in this paper
Zhang Xi from Infineon Technologies Warstein (Germany) willtalk about lsquoEfficiency improvement with silicon carbide basedpower modulesrsquo In this paper the utilization of SiC based diodesand switches in power modules will be presented discussed andcompared with Si-based power modules Whereas SiC switcheshave the overall lowest dynamic losses they show higher staticlosses due to the lack of conductivity modulation and thenecessary chip size limitations due to the still high SiC basematerial price The frequency dependence of the total losses ofthe various 1200V configurations (Si-IGBT + Si freewheelingdiode Si IGBT + SiC Schottky diode SiC-JFET cascode + internalbody diode of the cascode) shows that a module solutioncontaining a state of the art SiC switch will outperform all otheroptions for switching frequencies gt20kHz
Michael A Briere ACOO Enterprises LLCInternational Rectifier(USA) refers to lsquoGaN Based Power Conversion A New Era inPower Electronicsrsquo GaN based power devices such as HEMTspromise to deliver a figure-of-merit (FOM) performance that is at
least an order of magnitude better than state of the art siliconMOSFETs In addition to reviewing the distinct advantages of anew GaN-on-Si technology platform this paper will alsodemonstrate how DCDC converters built using the new GaNtechnology platform will enable a new era in high frequencyhigh density highly efficiency power conversion solutionsPrototype 600V switches and rectifiers have been developedand characterized and demonstrated in such application circuitsas PFC ACDC converters and motor drive inverters Thebehaviour of these devices in terms of reverse recovery andon-resistance are similar to that of well publicized SiC baseddevices
Gourab Majumdar CTO at Power Device Works MitsubishiElectric Corporation (Japan) will present lsquoSome key researches onSiC device technologies and their predicted advantagesrsquo Thispaper attempts to analyse SiC performances in actual deviceapplication through outcomes from some key researches Toanalyze advantages of SiC based power devices over theirsilicon based counterparts a high volume and standardapplication segment such as the 400-480VAC line rated motordrives group is considered to be ideal From this viewpoint thepresent research work has focussed on 1200V class devicetechnologies 4H-SiC based MOSFET and SBD structures havebeen considered to be the best fit device configurations for thetargeted application category and have been thoroughlyinvestigated New SiC-MOSFETSBD structures have beendeveloped aiming at high power density applicationsPerformance details of such newly fabricated SiC devices alongwith their evaluation under actual operating conditions are alsointroduced
The Almost Perfect Switch isAhead
ldquoThe main sessionwithin PowerElectronics is thesubject WideBandgap Materialsand Devicesfollowed byMultilevel Convertersand Die TemperatureMeasuringldquo statesPE Co-Chair UweScheuermann
PCIM 2009 19
Power Electronics Europe Issue 4 2009
p10-19 PCIM PreviewqxdNew Market News Template 22409 0900 Page 19
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
20 PCIM 2009
Issue 4 2009 Power Electronics Europe
In spite of the current economic crisis PCIMEurope 2009 in Nuremberg emphasises itsposition as Europersquos leading exhibition for powerelectronics intelligent motion and power qualityMore than 255 exhibitors (2008 257) will presenttheir products and innovations on 10700msup2exhibition space (2008 10600msup2) Thus theyshow the importance of contacting existing andfuture exhibitors especially in difficult times
How much savings in travel and training budgetswill affect the participant numbers at theconference canrsquot be estimated at the momentldquoThe tide might still turn Many companies couldrecognise that this conference would limber uptheir employees for the future This was inparticular important when the industryrsquosdevelopment cycles were getting faster all thetimeldquo states Udo Weller President of the organiser
Mesago PCIM Another indication for a successfulPCIM Europe 2009 are the visitor pre-registrationsThey are above previous year ldquoThe possibility toget an overview over the whole branchrsquos productrange can only be provided by an exhibition PCIMEurope is the place to be in times of crises aswellrdquo Weller says
4500V1200A IGBT HiPak ModuleABB Switzerland (12-408506) has alreadypresented the 4500V1000A HiPak module basedon the SPT+ platform SPT+ is the latestgeneration of planar devices with enhanced carrierprofiles which offers significantly reduced staticlosses compared to the SPT platform at the sametime providing improvements in turn-offruggedness These features ensure an increasedmargin for further increase of power density in the
TheWholeWorld of PowerElectronicsThe PCIM 2009 exhibition looks quite healthy with 260 exhibitors and 6500 visitors expected quite similarto the year 2008 event Following is an overview on interesting exhibits in company order
ldquoIn spite of the current economic crisis PCIM Europe 2009stays firm as a rockldquo says Mesagorsquos Udo Weller
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 20
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
Gap Pad S-Class stays softIt doesnrsquot flake tear orcrumble for easy applicationSay good-bye to crumbling oily gap fillersfor good Bergquistrsquos super-soft Gap PadSClass thermally conductive gap fillingmaterials conform todemanding contourswhile maintaining
structural integrity and applying little or no stressto fragile components In addition S-Classrsquo naturalinherent tack provides more stable releasecharacteristics making it cleaner and easier tohandle in the application assembly process
Maximize thermal performance with Gap Pad S-ClassS-Class materials provide high thermal conductivity for exceptionally lowthermal resistance at ultra-low mounting pressures ndash our best thermalperformance material yetThe elastic nature of the material also providesexcellent interfacing and wet-out performance And because of its naturalinherent tack S-Class eliminates the need for additional adhesive layers
that can increase interfacial resistance and inhibit thermal performance
FREE sample kit and S-CapVisit our web site or call today to qualify for your FREE S-Classsample kit and S-Cap
Call +31 (0) 35 5380684 or visit wwwbergquistcompanycomease
Thermal Products bull Membrane Switches bull Touch Screens bull Electronic Components
European Headquarters - The Netherlands Tel EU +31 (0) 35 5380684 D +49-4101-803-230 UK +44-1908-263663
AN ORIGINALNEVER
CRUMBLES
Unlike Imitations Bergquistrsquos Gap Padreg S-Class Stays Soft While Providing Superior Thermal Performance
21_PEE_Issue 4 200921_PEE_Issue 4 2009 21409 1426 Page 1
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
22 PCIM 2009
Issue 4 2009 Power Electronics Europe
module up to 1200A The new module offers thesame smooth switching characteristics and highdynamic ruggedness as its predecessor and isoptimised for parallel operation
For the 4500V HiPak modules this new designwill provide high voltage system designers withenhanced current ratings combined with thesmooth switching characteristics Production of thisnew module is scheduled for July 2009wwwabbcomsemiconductors
CeramCool Liquid CoolingCeramtech (12-442) introduces CeramCool sinceair cooling reaches its limits at very high powerdensities This is where liquid cooling is best suitedThe new ceramic heatsink for high powerapplications profits from the electrically insulatingcharacteristic and inertness of ceramics Nocorrosion can cause trouble The concept followsthe same goal as for air-cooled heatsinks - shortest(thermal) distance between heat source and heatdrain With CeramCool liquid cooling it is feasiblethat for example cooling water is only 2mm awayfrom the heat slug No other concept can do this incombination with the durable nature of ceramicsAlmost any needed cooling capacity is feasibleAdditionally multilateral electrical circuits can beprinted directly on CeramCool without creatingthermal barrierswwwceramtechde
Power Trench MOSFETs for SMPSApplicationsFairchild Semiconductorrsquos (12-601) new mediumvoltage PowerTrench technology MOSFET has verylow specific RDS(ON) low QGD and QGDQGS ratioAdditionally the excellent body diode characteristicsnot only reduce the power losses to improveefficiency but also improve reliability Newminimum efficiency limits are being imposed forSMPS even at 10 to 20 of the operating loadconditions and these new MOSFETs areinstrumental in improving efficiency in thesedesigns This advanced trench gate MOSFETtechnology has improved performance overexisting trench gate power MOSFETs in theseapplications The new device has an on-resistanceimprovement in range of 40 and less than halfthe gate to drain charge of latest generation trenchdeviceswwwfairchildsemicom
12001700V IGBT ModulesFuji Electricrsquos (12-407) new power module line-up consists of 1200 and 1700V voltage classesthree types of packages and current ratings of600 to 3600A among a total of 14 types ofproducts These High-Power IGBT Modules havebeen developed based on the concepts of thelsquolow thermal impedancersquo and lsquohigh environmentalperformancersquo To realise high-voltage high-capacity inverter systems with larger capacity it isnecessary for many modules to be connected inparallel and in series Since powersemiconductors are generally mounted on theequipment heatsink and electrically be isolated itis necessary to choose a substrate material withboth high isolation and thermal conductivityThus Fuji has developed a new packagetechnology of applying silicon nitride as the DCBmaterial since Si3N4 has very attractive featuresof low thermal impedance leakage capacitancecompatibility and good physical strength Fromexperimental measurement it is possible toreduce the thermal-resistance Rth(j-c) as much as33 at IGBT level compared to the conventionalAl2O3 based DCB Also a very high environmentalperformance of as high as lt600 CTI(comparative track index) has been achievedwhich is the highest value for IGBT modulesavailable on the marketwwwfujielectricde
E2 High Voltage IGBT ModulesHitachi Europe Ltd Power Devices Division (12-355) introduces two new high voltage IGBTmodules The new 33kV MBN1000E33E2 andMBN1500E33E2 IGBT modules offer a currentrating of 1000 and 1500A respectively The newmodules are manufactured using Hitachirsquos new E2series fine pattern silicon process technology whichenables a more cost-effective production processincreased current capability and an increase in theactive silicon cell area to achieve a higher currentrating than existing E series products Both the Eseries and the new E2 series products have similarturn-on and turn-off characteristics using a planargate this allows the same gate driver unit fromexisting designs to be used in new higherspecification E2 series designs TheMBN1000E33E2 is available in a small and theMBN1500E33E2 is available in a large footprintpackage Typical applications for these new IGBTmodules include propulsion and auxiliary powersystems renewable energy power conditioningand heavy industrial systemswwwhitachieupdd
SiC JFET Power ModuleInfineon Technologies (12-404) introduces its firstpower module containing silicon carbide switchesThe performance of Si based MOSFETs is quicklydecreasing when the blocking voltage of theswitch is getting higher than 1000V The IGBT is agood choice for switches with blocking voltagegt1000V But due to the tail current duringswitching off switching losses have certainphysical limits The desire for a faster switch withlow conduction loss has driven the developmentof a new switch based on SiC material - SiC basedjunction field-effect transistor (JFET) Whereas SiCswitches have the overall lowest dynamic lossesthey show higher static losses due to the lack ofconductivity modulation The frequencydependence of the total losses of the various1200V configurations (Si-IGBT + Si freewheelingdiode SiC IGBT + SiC Schottky diode SiC-JFETcascode + internal body diode of the cascade)shows that a module solution employing a stateof the art SiC switch will outperform all otheroptions for frequencies gt30kHz Infineonrsquos SiCJFET is a normally-on component with a pinch offvoltage of ~ 15V for compatibility with standardapplications it is better to provide normally-offswitches (cascode configuration) formed by a40V low-voltage Si-MOSFET (OptiMOS) in serieswith 1200V SiC JFET Each of the switches in thenew Easy2B H-bridge module contain six piecesof SiC JFETs in parallel and has an on-resistanceof about 70mΩwwwinfineoncom
Automotive-Qualified Dual Low-Side Driver ICInternational Rectifier (12-202) introduces theAUIRS4427S dual low-side driver IC for low- mid-and high-voltage automotive applications includinggeneral purpose motor drives automotive DC-DCconverters and hybrid powertrain drives TheAUIRS4427S is a low-voltage high speed powerMOSFET and IGBT driver qualified to AEC-Q100standards The output drivers feature a high pulsecurrent buffer stage for minimum driver cross-conduction and matched propagation delay forboth channels Negative voltage spike (Vs)immunity is provided to protect againstcatastrophic events during high-current switching
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 22
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
PCIM 2009 23
Power Electronics Europe Issue 4 2009
and short circuit conditions The device which is33 and 5V logic compatible with standard CMOSor LSTTL output features gate voltage (VOUT) up to20V CMOS Schmitt-triggered inputs twoindependent gate drivers and outputs in phasewith inputs
The new IR3725 input power monitor IC withdigital Isup2C interface is intended for low-voltageDCDC converters used in energy-efficient CPUserver and storage applications It is a highlyversatile input power voltage and current monitorIC for 12V power supplies Unlike alternativesolutions that depend on costly AD converters tomeasure a systemrsquos power the new device utilisespatent-pending TruePower technology to outputaverage power during a specified interval over aserial digital interface This information is used bythe system controller to optimise overall powerconsumption delivering benchmark currentaccuracy of 1wwwirfcom
Power MOSFETsIGBTsIXYS introduces the Linear L2 Power MOSFETfamily in 250 500 and 600V ratings These newdevices are designed to sustain high power inlinear mode operation and feature low static drainto source on-resistances They provide highperformance and reliability in controlled currentoutput applications which require robust andreliable devices for use in linear-mode operationsThe list of possible applications includes circuitbreakers current sources programmable loadspower controllers power regulators motor controlpower amplifiers and soft start applications L2MOSFETs are optimised to endure the highthermo-electrical stress caused by the simultaneousoccurrence of high drain voltage and currentcommonly present in applications operating inlinear-mode The forward bias safe operating area(FBSOA) is one such key characteristic that wasoptimized to overcome limitations and constraintsposed by conventional power MOSFETs in linearapplications
L2 MOSFETs are presented with drain currentratings from 15 to 90A and are available in avariety of discrete industry standard packagehousings
The GenX3TM IGBT portfolio to has beenextended to 1200V These IGBTs are offered invarious standard and ISOPLUS packages with
collector current ratings 20 to 120A Standardpackages include the TO-263 TO-247 PLUS247TO-220 TO-264 and TO-268
Co-packed variants of these new devices areavailable with HiPerFRED (suffix lsquoD1rsquo) and SONIC-FRD (suffix lsquoH1rsquo) ultra-fast recovery diodesproviding exceptional fast recovery and softswitching characteristics Additional productattributes include avalanche capabilities and asquare reverse bias safe operating area allowingthe device to safely switch in a snubberless hardswitching applicationwwwixyscom
Fluxgate Current TransducersLEM (12-402) will be highlighting a range ofcurrent transducers including the CAS CASR andCKSR family Using the Closed Loop Fluxgatetechnology these PCB-mounted transducers arehoused in a package 30 smaller than thecompanyrsquos LTS devices They have been designedto respond to the technology advances in drivesand inverters which require better performance inareas such as common-mode influence thermaldrifts (offset and gain maximum thermal offsetdrift for the models with reference access 7 ndash30ppmK according to the models) response time(less than 03micros) levels of insulation and size Alltransducer models have been designed for directmounting onto a printed circuit board for primaryand secondary connections They all operate froma single 5V supply The CASR and CKSR modelsprovide their internal reference voltage to a VREFpin An external voltage reference between 0 and4V can also be applied to this pin The CAS CASRand CKSR family of transducers are suitable forindustrial applications such as variable speeddrives UPS SMPS air conditioning homeappliances solar inverters and also precisionsystems such as servo drives for wafer productionand high-accuracy robotswwwlemcom
Digital Power Reference DesignMicrochip (12-344) shows an ACDC referencedesign based on the new dsPIC33F lsquoGSrsquo series ofdigital power Digital Signal Controllers (DSCs) Thisreference design demonstrates how digital powertechniques are applied to reduce componentcount lower product cost eliminate oversizedcomponents and incorporate topology flexibilityThe Reference Design unit works with a universalinput voltage range and produces three output
voltages with a continuous power output rating of300W The front-end power factor correction (PFC)boost circuit converts universal AC input voltagesto a 420VDC bus voltage A full bridge transformerisolated buck converter incorporating a phase-shiftZero Voltage Transition (ZVT) circuit produces12VDC at 30A from the 420V bus The phase-shiftZVT converter also provides output-voltageisolation from the AC mains input A multi-phasesynchronous buck converter then produces33VDC at 69A from the 12VDC bus and a single-phase buck converter produces 5VDC at 23A fromthe 12V bus The dsPIC33F controls the PFC boostcircuit and the primary-side ZVT full-bridge circuitA second lsquoGSrsquo series dsPIC33F monitors the12VDC bus voltage and controls the four buckconverterswwwmicrochipcomSMPS
2500A1200V Dual IGBT PowerModuleMitsubishi Electricrsquos (12-301421431)conventional MPD (Mega Power Dual)1400A1200V IGBT module is used in largerpower industrial equipment By the expansion ofthe renewable energy generation systems like windpower and photovoltaic larger power systems arerequired Thus a simpler 2500A1200V dual IGBTmodule with low internal stray inductance andfitted for liquid cooling has been developed Itcontains Mitsubishirsquos 6th generation IGBTs withreduced VCE(sat)-Eoff trade-off of 07V compared to5th IGBT generation The NX series also equippedwith 6th generation IGBTs has novel flexibility of itsterminal and circuit configuration by using someunified package parts and power devices
Also a range of 3in1 three-level IGBTmodules eg an lsquoall in onersquo up to current rating
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1018 Page 23
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
24 PCIM 2009
Issue 4 2009 Power Electronics Europe
of 75A and a 4in1 configuration eg one leg of athree-level inverter modules up to 200A havebeen developed Furthermore two 2in1 modulessplit for upper and lower part of the leg of thethree-level configuration for up to 600A ofmodule current have been developed to coverthe higher power range of inverterswwwmitsubishichipscom
DOSA-Compliant DCDC ConvertersMurata Power Solutions (12-548) extends itsoffering of Okami (Japanese for lsquowolfrsquo) non-isolated single point-of-load (PoL) DCDCconverters with 35A modules and 5V nominalinput The new parts complement the 12V input3 5 10 and 16A modules recently introducedThe new Distributed-Power Open StandardsAlliance (DOSA) compatible modules are housedin industry-standard surface-mount (SMT)packages and can act as a drop-in replacementfor other DOSA compliant parts Typicalapplications include powering CPUsdatacomtelecom systems server and storageequipment industrial systems and programmablelogic and mixed voltage designs The new DCDCconverters offer efficiency levels up to 945and are able to drive 1000microF ceramic capacitiveloads This makes them suited for poweringapplications with tight output load regulationrequirements such as latest generation FPGAsand DSPswwwmurata-pscomokami
Frequency Inverter Test SystemScienlab electronic systems GmbH (12-549)introduces a test system for frequency converterswhich overcomes limitations that result fromusage of electrical machines for inverter testingExtremal points of operation are examinedrealistically without risk of damage for machine orbattery The inverter under test is provided DC linkvoltage from an electronic DC source whichemulates the desired front-end or batterycharacteristicsInstead of an electrical machine an inverter
emulating any desired three-phase AC machine isused as load for the inverter under test This set-upoffers great flexibility and allows even for inclusionof drive train dynamics into the simulated loadcharacteristics The only limitations result from themaximum values of output power output voltageand output frequency of the emulators (60kW 1kV1kHz projected) The inverter can be tested incombination with various machine or sourcecharacteristics within a very limited period of timewithout costly mechanical modifications The testeris dedicated to both laboratory examination andend-of-line testing in series production of frequencyconverterswwwscienlabde
Sixth-Generation StripFETsSTMicroelectronics (12-414) introduces a newseries of 30V surface-mount power transistorsachieving on-resistance as low as 2mΩ toincrease the energy efficiency of products suchas computers telecom and networkingequipment This is around 20 better than theprevious generation and allows the use of smallsurface-mount power packages in switchingregulators and DCDC converters The STripFETVI DeepGATE technology also benefits frominherently low gate charge which allowsengineers to use high switching frequenciesand thereby specify smaller passivecomponents such as inductors and capacitorsThe broad choice of industry-standard outlinesincludingSO-8 DPAK 5x6mm PowerFLAT 33 x 33mmPowerFLAT PolarPAK through-hole IPAK andSOT23-6L offer compatibility with existingpadpin layouts at the same time as improvingefficiency and power density The first devicesinclude the STL150N3LLH6 which offers thelowest on-resistance per area in the 5 x 6mmPowerFLAT package The STD150N3LLH6 in theDPAK package comes with an on-resistance of24mΩ Samples are available for both deviceswith production availability scheduled for June2009wwwstcompmos
Multi-Phase Fusion Digital PowerControllerTexas Instruments (12-329) introduces a newdual-output multi-phase synchronous buckcontroller that can support various point-of-loadconfigurations The UCD9220 device
provides 250ps of pulse-width-modulation a2MHz switching frequency and high DCconversion ratios while maintaining stableoperation The flexible controller meetscomplex power design requirements intelecommunications server data storage andindustrial test and measurement applicationsDesigners can use the Digital Power Designera full-featured graphical user interface toconfigure the device easily and speed time-to-marketThe UCD9220 is available in a QFN-48
package and is priced at $265 in quantities of1000 The evaluation module will be available inlate second quarter 2009wwwticomucd9220-pr
65kV Phase Control ThyristorWestcode Semiconductors Limited (12-401)launches a new 65kV phase control thyristor forlsquomega-wattsrsquo power applications The device isoptimised for low forward conduction loss has anominal RMS current rating of 1695A and a surgecurrent rating of 105kAThe device is encapsulated in a 47mm
(185in) pole face hermetic pressure contactpackage using an alloy free process The device isoptimised for very low on-state voltage whencompared to similar devices in the samevoltage class with a forward volt drop of 20V at1000A The low conduction loss makes thedevice ideal for line frequency applicationssuch as front-end rectification as well as allcontrolled rectifier applications up to a fewhundred hertzOther applications for which the device is
suited include DC drives load commutatedinverters and excitation equipment power andmotor control for electrical trains high powergenerators UPS and renewable energyapplications including solar power generators andwind turbine generatorsThe optimisation of the conduction losses
achieves lowest system losses and minimisesthe cooling requirements for applications up to23kV line voltage Thus the new phase controldevice is also ideal for use in crowbarsparticularly for traction in applications up to1500V DCwwwwestcodecom
p20-24 PCIM ExhibitionqxdNew Market News Template 21409 1019 Page 24
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
Let us help you take the next step in Megawatt drives
USAIXYS Long Beache-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltde-Mail wslsaleswestcodecom
wwwixys com
Engineered Press-Pack IGBT Stacks
wwwwestcodecom
FAR EASTIXYS Taiwane-Mail salesixyscomtw
WESTCODEAn IXYS Company
Benefitsbull Take advantage of our experience Pr oven and tested solutions Clamping cooling components Fast track your next design
Typical projectsNew developments
- MVDs Wind STATCOM Traction refurbishment Upgrading of GTOs GCTs System optimisation
We offerA dedicated team of talented engineers
Full service fr om concept to hardware As much or as little as you r equire 3D CAD and simulation
Ther mal and electrical test
e-Mail us atppigbtwestcodecom
together we have the solution
To receive your own copy of
subscribe today at
wwwpower-magcom
To receive your own copy of
subscribe today at
wwwpower-magcom
YOUR EXPERT FORLIQUID COOLED HEATSINKS
12-14 Mai 2009Stand Nr 12-637
- USADAU Thermal Solutions Inc
Phone +1 519 954 0255salesdauusacomwwwdauusacom
- AUSTRIA DAU GesmbH amp Co KG
Tel +43 (0) 31 43 23 51 - 0 officedauatcomwwwdau-atcom
For nearly all type of semiconductors
Several standard sizes
Stable constructionfor high clamp force
Low thermalresistance
25_PEE_Issue 4 200925_PEE_Issue 4 2009 22409 0953 Page 1
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
26 POWER SEMICONDUCTORS wwwticommosfet PCIM 2009 Booth 12-329
Issue 4 2009 Power Electronics Europe
Next Generation of PowerMOSFETsNexFET technology is a new generation of MOSFETs for power applications with its roots in a laterallydiffused MOS (LDMOS) device used successfully for RF signal amplifications The RF heritage providesminimum internal capacitances and the vertical current flow offers a high-current density without gatede-biasing issues By using NexFET switches a converterrsquos efficiency can be significantly improvedJacek Korec and Shuming Xu Power Stage Group Texas Instruments USA
Power MOSFETs are used for exampleas switches for high-frequency pulse widthmodulation (PWM) applications such asvoltage regulators andor switches thatcontrol current to and from a load in powerapplications When used as a load switchwhere switching times are usually long thedevicersquos cost size and on-resistance are theprevailing design considerations When usedin PWM applications the transistors mustexhibit minimal power loss during switchingwhich imposes an additional requirement ofsmall internal capacitances that make theMOSFET design challenging and often moreexpensive Special attention has to bepayed to the gate-to-drain (Cgd) capacitanceas this capacitance determines the voltagetransient time during switching It is themost important parameter affecting theswitching power loss
Pursuing the ideal switchThe requirements for an lsquoidealrsquo switch
used in a synchronous buck converterwhich is the most popular convertertopology used for computer applicationsare low conduction losses (low RDS(on)) lowswitching losses (small Cgd) low driverlosses (small Ciss) no cross-current losses(small CgdCiss ratio to avoid shoot-througheffect) and low body diode losses (smallQrr and hard switching enabling short break-before-make delay time)Of course the device used as a switch
must have a robust structure allowing largeamounts of avalanche energy to bedissipated ensuring reliable operation overthe full safe operating area (SOA) rangeIn NexFETs (see schematic cross-section in
Figure 1) the current flows from the sourceterminal provided by the top metallisationthrough the lateral channel underneath theplanar gate into the lightly doped drainextension region (LDD) then forwarded tothe substrate by the vertical sinker with lowresistance The RF heritage providesminimum internal capacitances and thevertical current flow offers a high-current
density without gate de-biasing issues typicalfor LDMOS transistor planar layoutsThe NexFET devicersquos source metallisation
has a unique topology providing a field-plate effect at the gatersquos drain corner Thefield-plate stretches the electric fielddistribution along the LDD region reducingthe high electric field peak at the gatecorner In turn it provides good reliabilityagainst hot carrier effects that deterioratethe gate oxide quality in conventionalLDMOS transistorsThe LDD region is doped to a high level
of carrier concentration taking advantage of
the charge balance between the LDD thefield-plate and the deep-P regionunderneath This helps minimise thedevicersquos resistance (RDS(on)) The deep-Pdoping is also used to provide a largecharge below the channel regionsuppressing short channel effects By doingso short channel length can be designedwithout problems related to punch-througheffects The source contact is performed ina shallow trench reaching through thesource implant region A doping profileengineering technique is used to pin thelocation of the electric breakdown at a
Figure 1 Schematiccross-section of aNexFET device
Figure 2 Technology comparison between Trench-FET (left) and NexFET
p26-27 Feature TIqxdLayout 1 21409 1022 Page 26
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
wwwticommosfet PCIM 2009 Booth 12-329 POWER SEMICONDUCTORS 27
Power Electronics Europe Issue 4 2009
high-drain voltage This locates theavalanche generationrsquos hot carriers far awayfrom the gate oxide and guarantees thatthe internal bipolar transistor structure willnot be triggered up to very high avalanchecurrent densitiesIn the last two decades the trench
MOSFET has established itself as the mostsuccessful technology for low-voltage(lt 100V) power switches Figure 2compares trench and NexFET technologiesThe major advantage of the trench approachis the high-channel density within a smallpitch of the active cell Alternatively the largearea of the trench walls makes it difficult tokeep the internal capacitances small Alsothe moderate doping level of the epitaxiallayer below the trench results in a non-scalable contribution to the transistorrsquosresistance and limits the advantage ofdesigning the FETs for low-drain voltageapplications (eg below 20V VDSmax)By taking advantage of readily available
modern fine lithography fabricationprocesses you can combine a narrow gateline coupled with a high doping of the LDDregion This novel new structure now hasresistance competitive with trench MOSFETtechnology yet retains very low chargecharacteristics The gatersquos minimum overlapover the source and drain regions keepsthe internal CGS and CGD capacitances smallthus delivering excellent switchingperformance Additionally the source metalfield-plate over the LDD region acts as ashield decoupling gate from the drainterminals This forces CGD to dropsignificantly even at small drain voltagesLow CISS and CGD values make the NexFET-FOM (RDS QG and RDS QGD figure of merits)much better than the FOM observed forleading edge trench MOSFETs
NexFET switching performanceExperimental data on benchmarking
NexFET devices versus state-of-the-art trenchMOSFETs (Figure 3) for application in PWMswitching converters using synchronous bucktopology is very popular in the field of low-voltage power supplies Converter efficiencyis shown as a function of the output currentfor the case of a six-phase commercialevaluation board The results obtained usingleading edge trench devices lay within aclose group of data and differ by plusmn05only The converter efficiency achieved by aNexFET chip set is higher by 2 to 3 in thefull range of load currentThe NexFET transistor has a comparable
body diode reverse recovery behaviour to anoptimised trench device The difference isthat the NexFET can take advantage of ahard PWM drive where the turn-off of thetransistor is sharp and has minimal tailcurrent Thus the break-before-make delaytime can be made very short minimising the
diode conduction time and hence theassociated diode conduction power loss Inother words you can expect that when usingNexFET switches the converterrsquos efficiencycan be further improved by reducing delaytimes dictated by the gate driver stageFigure 4 compares a plot of power loss
versus the switching frequency of a 12Vsynchronous buck converter for a leadingedge trench FET chip set compared to aNexFET solution In conclusion theconverterrsquos efficiency can be kept above90 (power loss of 3W) The switchingfrequency can be increased from 500kHz to1MHz by using NexFET devices It is actuallyfeasible to increase this frequency beyond1MHz by optimising driving conditions
Summary and OutlookIn response to the quest for an ideal
switch the NexFET technology deliversfollowing features Specific RDS(on) is comparable to state-of-arttrench FETs
much lower CISS and CGD improves FOM switching losses and driver losses aresignificantly improved the ratio of CGD to CISS is similar to trenchFETs but absolute CGD value is very smalland shoot-through immunity is improvedby minimising the total amount of chargefeedback through Miller capacitance The body diodersquos Qrr is similar butNexFET transistors can be switched muchharder and the dead time dictated by thedriver can be made significantly shorterA distinct advantage in converter
efficiency can be observed simply bydropping-in NexFET chip sets into anexisting system NexFET technology enablesconverters to run at much higher switchingfrequencies minimising both size and costof filter components
LiteratureAPEC 2009 lsquoTI enters discrete high-
power MOSFET marketrsquo Power ElectronicsEurope 22009 (March) page 23
Figure 3 Efficiency of synchronous buck converter for server applications
Figure 4 NexFET enabling converter operation at high switching frequency
p26-27 Feature TIqxdLayout 1 21409 1022 Page 27
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
28 POWER MODULES wwwsemikroncom PCIM 2009 Booth 12-411
Issue 4 2009 Power Electronics Europe
Sinter Technology for PowerModulesHigh-power applications such as automotive wind solar and standard industrial drives require powermodules which fulfil the demand for high reliability thermal and electrical ruggedness These demands aremet by deploying state-of-the-art packaging technologies such as solder-free pressure and spring contactsbut also sinter technology The engineers in the New Technologies Department were challenged todevelop optimise and employ this new packaging technology Christian Goumlbl Head of NewTechnologies SEMIKRON Nuremberg Germany
Silver sinter technology has been usedto connect chips to substrates since 1994Even back then the properties of sinteredsilver bonding layers and the benefits theyboast in terms of reliability were analysedand reported on within the contexts ofnumerous international congresses At thattime however it turned out that this typeof bonding technology was not quite readyfor use in large-scale industrial electronics
Sinter technology basicsThese sinter chipsubstrate connections
are made solely out of special silverparticles which in certain circumstancesproduce sinter bridge formations thatcreate a reliable connection between thetwo bond parts Figure 1 shows the silverparticles before and after sintering Inrelation to this it is important to know thateach and every one of these particles issurrounded by a special coating materialProducing a bond is simple just place theamount of particles needed for the desiredlayer thickness between the two bond partsand apply a given temperature andpressure to the bond for a given time Theresult is a stable sinter connection Thisbasic process is however only sufficient forthe first technology evaluationsThe past years have been devoted to the
industrialisation of sinter technology Anindependent sinter paste has beendeveloped which today is the basis of thesinter paste approved and implemented bySemikron Additionally sinter engineeringtools have been developed to manufacture
multi-chip DCBs in formats of 5 x 7in Thesinter press was designed to handlepressure loads depending on the processaction The production staff that areresponsible for the assembly are well-trained and the process in placecontinuously improvedThe contact strength achieved by the
sinter layer between chips and substrates is
extraordinarily high The sintered layersdisplay high load cycling capability in thereliability tests A further advantage of sintertechnology is that no solder stop layershave to be washed out The achievedaccuracy of chip position relative to thesubstrates is as much as 50microm In soldertechnology in contrast a positionalaccuracy of just 400microm is achieved a fact
Figure 1 The silverdiffusion layer before(left) and after (right)the sinter process
Figure 2 Power cycling capability of sintered versus soldered chips
Table 1 Material parameters for the silverdiffusion sinter layer in comparison to astandard solder layer (the high temperaturestability of sinter technology indicates that theconnecting layers do not age)
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 28
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
wwwsemikroncom PCIM 2009 Booth 12-411 POWER MODULES 29
Power Electronics Europe Issue 4 2009
that can be considerably encumbering inthe subsequent image processingprocedures
Considering the thickness of the sinteredlayers the sintered layer is 45 timesthinner than a standard soldered layer andhas 4 times the thermal conductivity Thisresults in excellent thermal properties inthe sintered connection The layers alsodemonstrate far higher cycling capabilitythan soldered layers (see Figure 2) This isdue to the fact that the melting point of thesilver used in the sintered connection isalso four times higher than that of the lead-free solders commonly used today (seeTable 1) The long-term experience haspaid off - an alternative packagingtechnology completely solder-free hasbeen established
Sinter technology in applicationSinter technology was employed in the
SKiM IGBT module family for 22 to 150kWtrain drive converters in electric and hybridvehicles SKiM has five times the thermalcycling capability compared to moduleswith base plate and soldered terminalsInstead of soldering the DCB the ceramicsubstrate required for isolation to thecopper base plate the connection to theheat sink is assured by way of pressurecontact technology for all thermal andelectrical contacts (see Figure 3) Pressurepoints positioned directly beside each chipguarantee that the DCB is connectedevenly The fact that no base plate is used
ensures superior thermal cycling capabilityand low thermal resistance
Solder connections are omitted entirelyThis makes the SKiM family the first ever100 solder-free module series on themarket The combination of sintertechnology pressure contact technologyand base plate-less design ensures fivetimes the thermal cycling capability of asoldered module with base plate
In the past 15 years the maximumpermissible chip temperatures have risensteadily Today state-of-the-art siliconcomponents for instance IGBT 4CAL 4diodes can be operated at a maximumchip temperature of 175degC In the futurethe use of silicon carbide will create evengreater challenges in terms of sufficientthermal cycling ability in the connectinglayers Silicon carbide components can beoperated at temperatures as high as 300degCThe sinter technology however is ideallysuited for such high temperature rangesThis is due to the fact that the melting pointof these connecting layers is 961degCaround 740degC higher than for the solderconnections commonly used today Thishigh temperature stability that this sintertechnology boasts means that theconnecting layers do not age as verified inreliability tests performed today
Over the years the areas of application forpower semiconductor modules havechanged dramatically In the pastsemiconductor modules were used in easily
accessible and stationary control cabinetswith defined cooling technology systemsToday in contrast power modules are to beused in mobile applications ie vehicles withcooling conditions of up to 110degC Thechallenge faced today is how to ensure thatthe power semiconductor component cangenerate its maximum permissible currentICmax under the cooling conditions Figure 4illustrates the relation between these twoparameters as well as the current that canbe controlled at increased chip temperatureswith no compromise to reliability
The future of sinteringSinter technology is a key technology
that allows for the production ofcomponents that are more powerful andreliable with a longer life-time The sameprinciples applicable to the SKiM modulefamily for electric and hybrid vehicles ndashbase plate-less module pressure contactsystem and sinter technology ndash wereapplied in the development of the 4thgeneration of the intelligent power moduleSKiiP for applications for example in thefields of wind and solar power elevatorsystems trolley buses metro andunderground vehicles
The benefits of sinter technologycontinue in the 4th generation of SkiiPpower modules such as five times thethermal cycling capability thanks to thesilver layer unbreakable joint between thedie and DBC and twice the power cyclingcapability
Figure 3 Cross-section of the SKiM 63 modulecase the pressure contact system and the springcontacts for the gate connections
Figure 4 The melting temperature in moduleswith sintered chips is six times higher than theoperating temperature
p28-29 Feature SemikronqxdLayout 1 22409 0852 Page 29
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
30 INDUSTRIAL POWER wwwvincotechcom PCIM 2009 Booth 12-426
Issue 4 2009 Power Electronics Europe
Power Modules for Fast SwitchingMotor Drive ApplicationsMost of the current high power semiconductors are optimized for switching frequencies between 4 and8kHz Today however more and more applications require frequencies of 10kHz and higher New powermodules can now fill that gap Andreas Johannsen Product Marketing Manager IndustrialProducts Vincotech UnterhachingMunich Germany
According to current surveys about 40of the power consumption of motor drivensystems in the European Union comesfrom fans and pumps Most of thesesystems are outdated and not electronicallycontrolled A state-of-the-art system with ahigh frequency inverter can be up to 30more efficient While most of thesesystems are running day and night theenergy and cost saving potential isenormous In times of increasing energycosts and the growing importance ofenvironmentally-conscious behaviourenergy efficiency is becoming increasinglyimportant
Reasons for higher switchingfrequencies
Fans and pumps are often seen inheating ventilation air conditioning andrefrigeration applications which are usuallyinstalled in audible noise sensitiveenvironments Electromechanical effectsfrom switching high power can causeaudible noise For that reason a commonfeature in all these application areas is aswitching frequency of gt16kHz above theaudible range
Further application areas include motordrives with highly accurate torque controleg when used for surface processing ordrives for ultra high dynamic operationsOther reasons for higher switchingfrequencies are the possibility to usesmaller passive components such ascapacitors and coils This leads to smallerpackaging sizes and lower system costs
Power Semiconductors for higherswitching frequencies
For a powerful reliable and cost-effectivemotor drive the right choice of powersemiconductors is very important Most ofthe current high power motor inverters useIGBTs for the power switches
IGBTs currently available in the marketare optimised for different applicationareas In most cases the optimization is atrade-off between static and dynamiclosses two very important parameters of
an IGBT The static losses are the losseswhile the IGBT is switched on given by theCollector-Emitter-Voltage VCEsat The dynamiclosses are the losses during the switch-onand switch-off of the IGBT
A special disadvantage of the IGBT is thecurrent tail during switch-off The reason forthis is that during turn-off the electron flowcan be stopped rather abruptly by reducingthe gate-emitter voltage below thethreshold voltage However holes are left inthe drift region and there is no way toremove them except via a voltage gradientand recombination The IGBT exhibits a tailcurrent during turn-off until all the holes areswept out or recombined A short currenttail is therefore a very important feature ofan IGBT with low dynamic losses
Compared with 600V there are only afew 1200V-rated IGBTs available for higherpower applications running with switchingfrequencies of more than 10kHz The mostcommon components are built in TrenchField Stop technology and are optimised forswitching frequencies below 8kHz Thereason is that the main application field forIGBTs are industrial drives And most ofthese applications currently work atswitching frequencies between 4 and 8kHz
The standard Trench Field Stop IGBTs isoptimised for VCEsat and therefore lowerswitching frequencies and exhibits due tothe trench technology a rather high gatecapacity The gate capacity is up to threetimes higher compared with devices usingplanar structures
Another technology group optimised forfast switching applications are the Fast NonPunched (Fast-NPT) Through IGBTs Theyare typically used in applications withswitching frequencies from 30kHz up to afew hundred kHz eg in power supplies orwelding equipment The disadvantages ofFast-NPT are the very high static losses andmissing of short circuit capabilities Thismakes this technology unusable for motordrive applications
A real alternative might be the PlanarField Stop technology It promises low staticlosses with much lower gate capacity andfaster switching capabilities
Planar Cell Field Stop ndash the rightchoice
To figure out if the Planar Cell Field Stoptechnology is the right choice for motordrive applications with higher switchingfrequencies the total losses have to be
Figure 1 Total powerdissipation ofdifferent IGBTs as afunction of switchingfrequency (10kW DClink power 50Hzoutput motorfrequency)
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 30
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
wwwvincotechcom PCIM 2009 Booth 12-426 INDUSTRIAL POWER 31
Power Electronics Europe Issue 4 2009
observed Figure 1 shows the total lossesof different chip types in a typical motordrive application The comparisonbetween two IGBTs with 25A nominalcurrent (red and blue line) shows that thelosses of the Planar Cell Field Stoptechnology are also lower for lowerswitching frequencies The reason is thatthe static losses of the two chips arenearly the same while the dynamic lossesare lower for the Planar Cell Field Stoptechnology (see Figure 2)But even more interesting is the
comparison between devices of the samesize The 35A Trench Field Stop IGBT(yellow line) and the 25A Planar Cell FieldStop IGBT (blue line) in Figure 1 havenearly the same chip size Beginning fromswitching frequencies of 10kHz the totallosses of the Planar Cell Field Stop chip arelower than the 35A Trench Field Stop IGBTand therefore more cost-effectiveAt 20kHz the power loss is lower by
24 making an output power of 10kWpossible which could only be achievedusing 50 to 75A standard IGBT4components from Infineon Because thepower losses are much lower the heatsinkcan also be sized down This means theapplication will not only have much higherenergy efficiency but can also savecomponent costs or provide higher outputpower at the same size
Disadvantages of Planar Cell FieldStopOne might ask ldquoNothing is for free What
are the disadvantages of Planar Cell FieldStop technologyrdquoThe Planar Cell Field Stop IGBT is more
sensitive to parasitic inductance that cancause problems in the switch-off behaviourThis can be solved with a conclusive lowinductive module design Furthermore anadditional emitter contact directly wire-
bonded onto the chip is required Thismeasure protects the gate-emitter-voltagefrom any parasitic inductanceAnother disadvantage is the bigger chip
size compared to Trench Field Stop IGBTswith the same nominal current But thecomparison for different switchingfrequencies shows that for higherfrequencies the dynamic losses becomeincreasingly important At switchingfrequencies higher than 10kHz the PlanarCell technology can compete or evenoutperform chips at the same size andmuch higher current rating
Available module solutionsVincotech offers several module
solutions optimised for fast switchingapplications All these modules supportingthe above mentioned design requirementslike low inductive design and emittersensing down to chip level As part of theflowPIM 1 family the V23990-P589-A31-PM integrates all the power
semiconductors needed for motor driveapplications (rectifier inverter and optionalbrake) The module has a voltage rating of1200V and a nominal current of 25AFor higher power requirements a half-
bridge module with 1200V and 100A isalso available (V23990-P569-F31-PM)which is part of the fastPHASE 0 family(see Figure 3)To make full use of the advantages of
the Planar Cell Field Stop IGBTs themodules also feature special fastfreewheeling diodes
ConclusionThe Trench Field Stop IGBT is designed
for motor drive applications with a typicalswitching frequency of up to 4kHz Athigher frequencies the Planar Cell FieldStop components are the optimal choiceThis technology seems to be the favouritefor nearly all 1200V motor driveapplications using switching frequenciesabove 8kHz
Figure 2 Static (solid)and dynamic (dotted)losses as a function ofswitching frequency(10kW DC link power50Hz output motorfrequency)
Figure 3 Half-bridge module with 1200V and100A rating optimised for fast switchingapplications
p30-31 Feature VincotechqxdLayout 1 21409 1031 Page 31
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
32 IGBTMOSFET GATE DRIVERS wwwIGBT-Drivercom PCIM 2009 Booth 12-102
Issue 4 2009 Power Electronics Europe
Gate Drivers for High Performanceand Low CostCost and performance are two fundamental cornerstones of any power system component In the case ofthe gate drive module the cost performance ratio strongly influences the make-or-buy decision for thatsmall yet crucial building block Continuous advances in monolithic integration as well as high voltagetransformer technology have now made it possible to combine advanced gate drive functions and highoutput power density at low cost Sascha Pawel and Wolfgang Ademmer CT-Concept TechnologieAG Switzerland
It is well known that the number ofindividual components interacting in asystem is important for the overall systemreliability Fewer components means higherreliability in non-redundant systems as longas the component failure rates arecomparable This principle is successfullyapplied to monolithic integration ofelectronic functions into ICs for nearly allapplication aspects In power electronicshowever design cycles are considerablyslower and the designers are moreconservative in adopting technicaladvances This risk minimising attitude hasbrought todayrsquos power systems to a veryhigh reliability level However as thenumber of electronic functions isincreasing the reliability limitation due tothe large number of discrete componentsand off-the-shelf ICs is becoming more andmore severe
Specialising in gate driver solutionsCONCEPT is focusing on gate drivers to
overcome the obstacles of monolithicintegration in this highly specific marketMonolithic integration requiresconsiderable initial efforts Thus it issimple truth that the best priceperformance ratio can be achieved by aspecialised company Broad applicationcoverage and the large combined quantityof CONCEPT drivers delivered to a greatvariety of customers makes it possible tomerge all common functions of a driverinto a platform of dedicated applicationspecific ICs (ASICs)SCALE the first generation of dedicated
chipset of ASICs for gate drivers allows70 reduction in component count for acomplete gate driver core Cores are drivermodules including DCDC conversionbidirectional signal transmission highvoltage insulation output stages andadvanced protection and monitoringfunctionsThe recently introduced SCALE-2 chipset
is continuing the successful SCALEphilosophy with the improvements andadditional capabilities of modern ICtechnology SCALE-2 further reduces thecomponent count by two thirds Up to90 of the discrete devices have thusbeen monolithically integrated into theASICs This reduction is directly visible inthe very high reliability figures of the gatedrive modules build with these drivers Thenew chipset naturally complements the
SCALE technology and helps to implementsignificant cost saving options The productline-up will therefore continue to rely on abalanced combination of both technologysteps where the specific advantages ofeach are fully utilised Figure 1 shows anoverview of the current SCALE technologyoptionsTwo new SCALE-2 gate drivers are
currently under development that willextend the application range of ASIC based
Figure 1 SCALE technology overview
Figure 2 Half-bridgedriver core 2SC0550Pmeasuring 57 x 62 x65mm
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 32
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
wwwIGBT-Drivercom PCIM 2009 Booth 12-102 33
Power Electronics Europe Issue 4 2009
driver cores The first one is following a rigid low cost approach while stillmaintaining full functionality The second one targets applications where highestdriver performance is required
Half-bridge driver module with planar transformersDriver performance is a complex parameter associated with gate drive
power maximum switching frequency peak current capability and many moreThe combination of newly developed planar transformer technology for 1700Vclass systems with the integrated SCALE-2 platform yields the highest densityof power and functionality seen so far in a driver core Figure 2 shows the half-bridge driver 2SC0550P On 57 x 62mm board space the driver delivers morethan 5W output power per channel The peak current capability reaches 50Awhich is important for parallel operation of several high current IGBT modulesWith its high maximum frequency limit of more than 200kHz the driver isready to serve both todayrsquos resonant converter applications as well asprospective SiC and GaN devicesDedicated build-up of the driver PCB and careful optimisation of the whole
production process have made reliable planar transformers for the 1700V classof insulation systems feasible The apparent benefits are automatedmanufacturing with high reproducibility and low tolerances a driver height of lessthan 7mm high power density and superiour immunity to magnetic fieldsThe driver targets fast-switching applications high current modules up to IHM
1700V3600A and parallel connection
Lower cost half-bridge driverThe cost saving capability of ASIC integration is fully exploited towards the
lower end of the driver power spectrum Figure 3 shows a picture of the lowcost driver 2SC0107T The PCB contains only 23 components includingtransformer and ICs to form a complete IGBT and MOSFET driver core with allfunctions known from existing SCALE drivers The output power rating is 1W perchannel at up to 7A maximum output currentThe driver core 2SC0107T is designed to control IGBT modules between
1200V 100A at 50kHz and 1700V450A at 10kHz The driver also features adedicated MOSFET mode which allows faster switching at reduced gate voltageswing
Pricing and availabilityThe pricing of the 2SC0107T is very competitive thanks to the low production
costs of the SCALE-2 platform At quantities of 10000 pieces the driver will bepriced $20 ($10 per channel) It thus compares very favourably with discretesolutions for bidirectional signal transmission isolated DCDC power and gatedrive output The benefits of high reliability and tried and tested SCALEtechnology are also included Samples of the two new driver cores will beavailable summer 2009
Figure 3 Half-bridge driver core 2SC0107T measuring 45 x 34 x 16mm
Future precisionFuture performanceNow available
CAS-CASR-CKSRThe transducers of tomorrow LEM creates them today Unbeatable in size they are also adaptable and adjustable Not to mention extremely precise After all they have been created to achieve great performance not only today ndash but as far into the future as you can imagine
bull Several current ranges from 6 to 50 ARMS
bull PCB mountedbull Up to 30 smaller size (height)bull Up to 82 mm Clearance Creepage distances +CTI 600 for high insulationbullbull +5 V Single Supplybull Low offset and gain driftbull High Accuracy +85degCbull Access to Voltage Referencebull Analog Voltage output
wwwlemcom
At the heart of power electronics
PCIM
Europe2009
Hall 12-402
p32-33 Feature ConceptqxdLayout 1 21409 1430 Page 33
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
High Frequency Artists
SAMPLES AVAILABLE
CT-Concept Technologie AG Renferstrasse 15 CH-2504 Biel Switzerland Phone +41-32-344 47 47 wwwIGBT-Drivercom
FeaturesUltra-compact single-channel driver500kHz max switching frequencyplusmn1ns jitter+15V-10V gate voltage20W output power60A gate drive current80ns delay time33V to 15V logic compatibleIntegrated DCDC converterPower supply monitoringElectrical isolation for 1700V IGBTsShort-circuit protectionFast failure feedbackSuperior EMC
The 1SC2060P is a new powerful member of the CONCEPT family of driver cores The introduction of the patented planar transformer technology for gate drivers allows a leap forward in power density noise immunity and relia-bility Equipped with the latest SCALE-2 chipset this gate driver supports switching at a frequency of up to 500kHz frequency at best-in-class efficiency It is suited for high-power IGBTs and MOSFETs with blocking voltages up to 1700V Let this versatile artist perform in your high-frequency or high-power applications
1SC2060P Gate Driver
34_PEE_Issue 4 200934_PEE_Issue 4 2009 22409 0912 Page 1
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
Improving the Efficiency of PFCStages Using Interleaved BCMHigher levels of integration in analog control circuits have enabled newer power factor correction (PFC)techniques which further improve efficiency The interleaved boundary conduction mode (BCM) PFCapproach is a good alternative to non-interleaved continuous conduction mode (CCM) PFC method forinput power levels from 300W up to and over 1000W Jon Harper Market Development ManagerPower Conversion amp Industrial Systems Fairchild Semiconductor Europe
The increasing demand for power factorcorrection (PFC) is being driven by energy-saving initiatives PFC cuts energy wasted inthe electricity distribution networks byreducing the peak currents and minimisingthe harmonic currents Newer draft energysaving regulations in lighting powersupplies and motion control will furtherincrease the demand for PFC For examplea permanent magnet synchronous motordriven from an inverter will have betterefficiency but worse power factor than aninduction motor driven from a simple triaccontrol An additional PFC stage improvesthe power factor reducing losses andproblems with harmonic currents in theenergy distribution network The PFC stage
needs to have high efficiency so as not toreduce the benefit gained from using thenewer type of motor
Principle of operationThe principle of interleaving is a well
established technique applied in powerelectronics Most microprocessors aredriven from a multi-phase synchronousbuck power supply In interleaving two ormore output stages are connected inparallel where each of the output stages isswitched at a different time The sametechnique can be applied to BCM PFC andCCM PFC Most methods of PFC use aboost stage The two interleaved outputstages share the same output capacitor
(see Figure 1)The first aspect of interleaving is that the
PFC ripple current both on the input andon the output is reduced The two stagesare synchronised with a special circuitensuring that the stages are switched 180ordmout of phase with each other Theperformance of the synchronisation circuitis perhaps the most critical part of aninterleaved BCM controller The difficultywith synchronisation is one of the mainreasons why this technology has not beenadopted earlier These aspects will bereviewed laterIn a perfectly synchronised interleaved
BCM PFC system the currents drawn bythe first phase will partially cancel out the
Figure 1 Interleaved boundary conduction mode circuit
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 35
Power Electronics Europe Issue 4 2009
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 35
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
currents from the second phase as shownin Figure 2 The overall input current andcapacitor currents have a much lower ripplewhich is at twice the frequency of the ripplefrequency of the individual stages Boththese factors simplify the dimensioning ofthe EMI filter needed to reduce the inputripple current harmonics to meet EMIstandards The reduced ripple currentflowing through the output capacitor resultsin longer system lifetime if the samecapacitor is used or a reduction in systemvolume and cost if the output capacitor sizeis redimensioned to meet the lower ripplecurrent ratingsThe second aspect of interleaving is that
the current flowing through each of thestages is halved This does not have anyeffect on the conduction losses if theMOSFETs used in the interleaved versionhave exactly twice the RDS(ON) of theMOSFETs used in the non-interleavedversion in other words if the same siliconarea is used for the switches In this casethe switching losses could however bereduced The smaller MOSFETs have halfthe gate charge and switch only half thecurrents seen in the non-interleavedversion resulting in one quarter of theswitching losses for each device or onehalf of the switching losses in total Effects
such as higher switching dvdt need to beconsidered hereAs interleaved controllers use newer
technologies than the standard BCMcontrollers it is possible to take furthersteps to improve the switching efficiencyThe FAN9612 interleaved BCM PFCcontroller from Fairchild Semiconductorhas two notable features which improvethe efficiency of the boost circuit Firstthe detection of the zero voltageswitching point is performed accuratelywithout the need for an additional RCdelay circuit Standard BCM controllerswill switch on the zero crossing from theboost inductor winding the FAN9612switches at the zero current pointSecond the use of two separate senseresistors to detect over-current conditionsfor each MOSFET actually reduces overallresistor losses in addition to improvingsystem reliabilityThe reduction in ripple currents increase
of ripple current frequency andimprovement in efficiency extends theworking power level beyond the simpledoubling in power levels which would beexpected by interleaving Standard BCMPFC is used up to around 300W whereasinterleaved BCM PFC can be extended to800W and upwards
Interleaved BCM PFC compared withstandard CCM PFCThe use of interleaving in a BCM PFC
stage extends the power range of operationto that traditionally covered by a non-interleaved CCM PFC stage The classicalnon-interleaved BCM to CCM comparisonsno longer apply so it is important tocompare these two approaches on theirown meritsThe first area of discussion is inductor
size Consider the design of a 400W powersupply with wide range input (85 to265VAC) Using the calculations shown inthe application note for the FAN9612 [1]results in two inductors dimensioned withan inductance of 220microH and a peakcurrent of 7A Using the same conditionsfor a CCM controller [2] results in aninductance of 790microH and a peak current of8A It is also interesting to note that theinductor dimensions for this power level fora non-interleaved BCM controller would be110microH and 14A further illustrating whynon-interleaved BCM is less desirable atsuch power levelsFor a compact design two inductors
based on PQ3220 cores can be used forthe 400W interleaved BCM PFC powersupply The core size used for the CCM PFCis estimated to be around PQ4040
36 INDUSTRIAL POWER wwwfairchildsemicom PCIM 2009 Booth 12-601
Issue 4 2009 Power Electronics Europe
Figure 2 Ripple currents in Interleaved BCMPFC circuit
Figure 3 Phase shedding and adding in interleaved BCM PFC
p35-39 Feature FairchildqxdLayout 1 22409 0936 Page 36
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
MAKING MODERN LIVING POSSIBLE
D A N F O S S S I L I C O N P O W E R SILICONPOWERDANFOSSCOM
The coolest approach to heat transferBenefit from the most cost-efficient power modules available
ments of the application In short when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density
Please go to siliconpowerdanfosscom to learn about Power Modules that are second to none
It cannot be stressed enough Ecient cooling is the most important feature in regards to Power Modules Danfoss Silicon Powerrsquos cutting-edge ShowerPowerreg solution is designed to secure an even cooling across base plates oering extended lifetime at no increase in cost All our modules are customized to meet the exact require-
ShowerPowerregShowerPowerreg
37_PEE_Issue 4 200937_PEE_Issue 4 2009 22409 0905 Page 1
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
New SPT Press-Pack IGBTs - where MegaWatts matter
USAIXYS Long BeachInc
e-Mail rsegallixysnet
Efficiency Through Technology
EUROPEWestcode Semiconductors Ltd
e-Mail wslsaleswestcodecom
wwwixys com
FeaturesFeaturesbull Improved 45kV chipset with even lower lossesbull Even wider SOA - Up to 4800A turn-off capability at 3kV dc link
bull Fully hermetic compression bonded encapsulation - Oslash47mm to Oslash125mm poleface industry standard outlines
- Increased power density
- Double side cooling
- High thermal cycling capability
- Simple series connection
- Enhanced rupture rating packages available
ApplicationsApplicationsbull MV Drives - Marine drives
- Traction
- Wind power converters
- Industrial
Typ 25 reduced Vce(sat)
FAR EASTIXYS Taiwan Office
e-Mail salesixyscomtw
bull Energy Utilities - STATCOM
- FACTS
- Active VAr controllers
- Renewable generation
++
New
improved
45kV chipset
For full product information please visithttpwwwwestcodecomprodpfhtm
and download Press-Pack IGBT brochure
Contant use-Mail ppigbtwestcodecomTelephone +44 (0)1249 444524
Name
Company Name
Address
Post Code
Tel Total Number of Copies pound p+p Total pound
Drives S amp S Hyd HB Pne HB Ind Mot CompHB HB Air
DFA MEDIA LTD Cape House 60a Priory Road Tonbridge Kent TN9 2BL
QUANTITY QUANTITY
HydraulicsampPneumatics There are now 6 of these handy
reference books from the publishers ofthe Drives amp Controls and
Hydraulics amp Pneumatics magazines
Published in an easily readable styleand designed to help answer basicquestions and everyday problems
without the need to refer to weightytextbooks
We believe yoursquoll find them invaluableitems to have within arms reach
From the publishers of
QUANTITY QUANTITY QUANTITY
If you would like to obtain additional copies of the handbooks please completethe form below and either fax it on 01732 360034 or post your order toEngineers Handbook DFA MEDIA LTDCape House 60a Priory Road Tonbridge Kent TN9 2BLYou may also telephone your order on 01732 370340Cheques should be made payable to DFA MEDIA LTD and crossed AC PayeeCopies of the handbooks are available at pound499 per copyDiscounts are available for multiple copies2-5 copies pound430 6-20 copies pound410 20+ copies pound375Postage and Packaging1-3 copies pound249 4 copies and over pound349
QUANTITY
PRACTICAL ENGINEERrsquoS HANDBOOKSPRACTICAL ENGINEERrsquoS HANDBOOKS
HYDRAULICS
INDUSTRIALMOTORS
SERVOSAND STEPPERS
PNEUMATICS
COMPRESSED AIRINDUSTRIAL
ELECTRIC DRIVES
PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY
38_PEE_Issue 4 200938_PEE_Issue 4 2009 22409 0958 Page 1
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
The next area of consideration is thereverse recovery losses of the boost diodeIn continuous conduction mode the boostdiode is switched while there is currentflowing through it This results in extraswitching losses as this current flowsthrough the boost MOSFET during turn-onAdditionally this extra current spike causesproblems with common-mode EMI due tothe fast switching transitions This is one ofthe more difficult problems to address inpractical CCM PFC circuits As there is nobody diode conduction in interleaved BCMPFC operation the switching losses are farlower resulting in higher efficiency withthe additional benefit of lower common-mode EMI
One other source of switching losses isthe output capacitance For low-linevoltage conditions BCM PFC circuits suchas those based on the FAN9612 have zerovoltage switching as the controller waitsuntil the minimum point of the voltagewaveform in the resonance occurring afterturn off So there is no loss due todischarging the output capacitance of theMOSFET In CCM PFC applications theMOSFET is always switched on at theinstantaneous input voltage meaning thatthere is never any zero voltage switching
Interleaved BCM PFC circuits havehigher conduction losses than CCM PFCapplications However initial comparisonshave clearly shown that this disadvantageis outweighed by the higher switchinglosses seen in CCM PFC applications evenwhen high performance diodes andMOSFETs are used in the CCM circuit Inconclusion interleaved BCM PFC circuitsare generally more efficient
EMI problems are easier to address withinterleaved BCM than with CCM The mainsource of EMI is caused by differential-mode noise which is addressed with aninput filter The inherent frequency variationand low ripple current ease this task Theringing of output diode causes common-mode noise in CCM systems This can bereduced using expensive silicon carbidediodes
Synchronisation and soft-startSynchronisation of the two interleaved
boost stages is a difficult problem whichhas been successfully solved on theFAN9612 Synchronisation under steadystate conditions is relatively straightforwardHowever it is the dynamics ofsynchronisation under start-up and loadchanging conditions which has madeinterleaved BCM PFC such a challenge forsystem designers of integrated circuits
At light load conditions the efficiencywould suffer if both phases were kept onSo at lighter load conditions it is importantto switch off one of the loads and when
wwwfairchildsemicom PCIM 2009 Booth 12-601 INDUSTRIAL POWER 39
Power Electronics Europe Issue 4 2009
Supplier of
customized
shunts
Substitute for transformers 5 letters
SMD shunt resistors save spaceand offer a number of advantages
High pulse loadability (10J)High total capacity (7W)Very low temperature dependency over
a large temperature rangeLow thermoelectric voltageCustomer-specific solutions (electricalmechanical)
Areas of use
Power train technology (automotive and non-automotiveapplications) digital electricity meters ACDC as wellas DCDC converters power supplies IGBT modules etc
Telephone +49 (27 71) 9 34-0 salescomponentsisabellenhuettede
wwwisabellenhuettede
Innovation from tradition
the load increases to turn this back onagain The circuit responds to thesechanges within a single switching cycle
Figure 3 shows the phase adding andshedding The gates of each MOSFET andthe currents flowing through each MOSFETare shown Phase adding and sheddingfunction without any transient
The soft-start used in the FAN9612 is aclosed-loop rather than an open-loop soft-start removing the output voltageovershoot normally seen in suchapplications Soft-start is such a problem inPFC circuits as there is a large output
capacitor which has to be charged withoutsaturating the control loop
In conclusion the FAN9612 addressesthese two difficult areas for interleaved PFCdesign
Literature[1] Application Note AN-6086
lsquoDesign Consideration for InterleavedBoundary Conduction Mode PFC UsingFAN9612rsquo Fairchild Semiconductor
[2] Application Note AN-6032lsquoFAN4800 Combo ControllerApplicationsrsquo Fairchild Semiconductor
p35-39 Feature FairchildqxdLayout 1 22409 0945 Page 39
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
International Exhibitionamp Conference forPOWER ELECTRONICSINTELLIGENT MOTIONPOWER QUALITY12 ndash 14 May 2009Exhibition Centre Nuremberg
2009
Power for Efficiency
VeranstalterOrganizerMesago PCIM GmbH Rotebuumlhlstr 83-85 D-70178 Stuttgart Tel +49 711 61946-56 E-mail pcimmesagocom
MesagoPCIM
40_PEE_Issue 4 200940_PEE_Issue 4 2009 21409 1428 Page 1
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
WEBSITE LOCATOR 41
Power Electronics Europe Issue 4 2009
ACDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
Diodes
Discrete Semiconductors
Drivers ICS
wwwmicrosemicomMicrosemiTel 001 541 382 8028
Fuses
GTOTriacs
IGBTs
DCDC Connverters
DCDC Connverters
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
Harmonic Filters
wwwmurata-europecomMurata Electronics (UK) LtdTel +44 (0)1252 811666
Direct Bonded Copper(DPC Substrates)
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwprotocol-powercomProtocol Power ProductsTel +44 (0)1582 477737
Busbars
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
Capacitors
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
wwwpowersemiconductorscoukPower Semiconductors LtdTel +44 (0)1727 811110
Connectors amp TerminalBlocks
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1003 Page 41
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
Power Modules
Power Protection Products
Power Substrates
Resistors amp Potentiometers
Simulation Software
Thyristors
Smartpower Devices
Voltage References
Power ICs
Suppressors
Switches amp Relays
Switched Mode PowerSupplies
Thermal Management ampHeatsinks
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwhvcacomHV Component AssociatesTel +49 (0) 89891 374 80
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwauxelcomAuxel FTGTel +44 (0)7714 699967
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrummentsTel +44 (0)1604 663399
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwdau-atcomDau GmbH amp Co KGTel +43 3143 23510
wwwdenkacojpDenka Chemicals GmbHTel +49 (0)211 13099 50
wwwlairdtechcomLaird Technologies LtdTel 00 44 1342 315044
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwuniversal-sciencecomUniversal Science LtdTel +44 (0)1908 222211
wwwisabellenhuettedeIsabellenhuumltte Heusler GmbH KGTel +49(27 71) 9 34 2 82
42 WEBSITE LOCATOR
Issue 4 2009 Power Electronics Europe
ADVERTISERS INDEX
ADVERTISER PAGE
ABB 9
AR Europe 11
Coilcraft 18
CT Concepts 12 amp 34
Danfoss 37
Dau 25
Digi-key 7
Fuji IBC
HKR 13
ADVERTISER PAGE
Infineon IFC
International Rectifier OBC
Isabellenhuette 39
Ixys 25 amp 38
Kerafol 17
LEM 33
Mitsubishi 4
PCIM 2009 40
The Bergquist Company 21
Linear Converters
Mosfets
Optoelectronic Devices
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
wwwpowerticomTexas InstrumentsTel +44 (0)1604 663399
Packaging amp Packaging Materials
wwwcuramikcoukcuramik electronics GmbHTel +49 9645 9222 0
wwwirfcomInternational Rectifier Co (GB) LtdTel +44 (0)1737 227200
wwwneutronltdcoukNeutron LtdTel +44 (0)1460 242200
wwwmicrosemicomMicrosemiTel 001 541 382 8028
wwwmark5comMark 5 LtdTel +44 (0)2392 618616
wwwbiaspowercomBias Power LLCTel 001 847 215 2427
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
wwwdigikeycomeuropeDigi-KeyTel +31 (0)53 484 9584
p41-42 Website Locatorqxdp41-42 Website Locator 22409 1004 Page 42
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
Fuji Electric Device Technology Europe GmbHGoethering 58 middot 63067 Offenbach am Main middot GermanyFon +49 (0)69 - 66 90 29 0 middot Fax +49 (0)69 - 66 90 29 56semi-infofujielectricde
Knowledge is power power is our knowledge visit usNo 12-407
The new IGBT Generationwith improved
switching characteristics amp thermal management
Reduced turn-on dVdtLower spike voltage amp oscillationExcellent turn-on dIcdt control by RG
Extended max temperature range Tjop = 150degC Tj = 175degCExtended package capacity
43_PEE_Issue 4 200943_PEE_Issue 4 2009 21409 1228 Page 1
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-
Leading-Edge Power Management Solutionsfor Todayrsquos Design Challenges
Whether yoursquore powering the worldrsquos next-generation processors driving towards fuel-efficient vehicles takinghigh reliability to new heights or squeezing more effi ciency out of everyday electronics IRrsquos power management solutions extend performance and conserve energy
iPOWIR SupIRBuck FETKY HEXFET xPHASE FlipFET iMOTION DirectFET and RAD-Hard are trademarks and registered trademarks of International Rectifi er Corporation
BenchmarkMOSFETs
Energy SavingProducts
EnterprisePower Automotive HiRel
bullTrench HEXFETreg
MOSFETs
bullDiscrete HEXFETreg
MOSFETs
bullDual HEXFETreg
MOSFETs
bullFlipFETtrade
bullFETKYreg
bullHybrid HEXFETreg
MOSFETs
bullDigital Control ICs
bullHigh-Voltage ICs
bull IGBTs
bullIRAM IntegratedPower Modules
bullIntelligent PowerSwitches
bullMERs
bullDirectFETreg
bullLow-Voltage ICs
bullSupIRBucktrade
bullXPhasereg
bullPower Monitor ICs
bull iPOWIR reg
Automotive Qualified
bullHEXFETreg PowerMOSFETs
bullIntelligent Power Switches
bullDriver ICs (Low- Mid- and High-Voltage)
bull IGBTs for Motor DrivesVarious Loads
bullRAD-Hardtrade MOSFETs
bullPower Modules Hybrid Solutions
bullMotor ControlSolutions
bullDC-DC Converters
Product Line Overview
The Power Behind Energy Savings
THE POWER MANAGEMENT LEADER For more information call +33 (0) 1 64 86 49 53 or +49 (0) 6102 884 311
or visit us at wwwirfcom
44_PEE_Issue 4 200944_PEE_Issue 4 2009 21409 1147 Page 1
- 01_PEE_Issue 4 2009pdf
- 02_PEE_Issue 4 2009_02_PEE_Issue 4 2009
- 03_PEE_Issue 4 2009
- 04_PEE_Issue 4 2009_04_PEE_Issue 4 2009
- 05_PEE_Issue 4 2009
- 06_PEE_Issue 4 2009
- 07_PEE_Issue 4 2009_07_PEE_Issue 4 2009
- 08_PEE_Issue 4 2009
- 09_PEE_Issue 4 2009_09_PEE_Issue 4 2009
- 10_PEE_Issue 4 2009
- 11_PEE_Issue 4 2009_11_PEE_Issue 4 2009
- 12_PEE_Issue 4 2009_12_PEE_Issue 4 2009
- 13_PEE_Issue 4 2009
- 14_PEE_Issue 4 2009
- 15_PEE_Issue 4 2009
- 16_PEE_Issue 4 2009
- 17_PEE_Issue 4 2009_17_PEE_Issue 4 2009
- 18_PEE_Issue 4 2009_18_PEE_Issue 4 2009
- 19_PEE_Issue 4 2009
- 20_PEE_Issue 4 2009
- 21_PEE_Issue 4 2009_21_PEE_Issue 4 2009
- 22_PEE_Issue 4 2009
- 23_PEE_Issue 4 2009
- 24_PEE_Issue 4 2009
- 25_PEE_Issue 4 2009_25_PEE_Issue 4 2009
- 26_PEE_Issue 4 2009
- 27_PEE_Issue 4 2009
- 28_PEE_Issue 4 2009
- 29_PEE_Issue 4 2009
- 30_PEE_Issue 4 2009
- 31_PEE_Issue 4 2009
- 32_PEE_Issue 4 2009
- 33_PEE_Issue 4 2009
- 34_PEE_Issue 4 2009_34_PEE_Issue 4 2009
- 35_PEE_Issue 4 2009
- 36_PEE_Issue 4 2009
- 37_PEE_Issue 4 2009_37_PEE_Issue 4 2009
- 38_PEE_Issue 4 2009_38_PEE_Issue 4 2009
- 39_PEE_Issue 4 2009
- 40_PEE_Issue 4 2009_40_PEE_Issue 4 2009
- 41_PEE_Issue 4 2009
- 42_PEE_Issue 4 2009
- 43_PEE_Issue 4 2009_43_PEE_Issue 4 2009
- 44_PEE_Issue 4 2009_44_PEE_Issue 4 2009
-