sipmos® power transistor

8/14/2019 SIPMOS Power Transistor

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SPD 09N05

SIPMOS PowerTransistor

Product SummaryDrain source voltage 55VDS V

Drain-Source on-state resistance 0.1RDS(on)

IDContinuous drain current 9.2 A

Features

N channel

Enhancement mode

Avalanche rated

dv/dt rated

175C operating temperature

Pin1 Pin2 Pin3

G D S

PackagingType Package Ordering Code

SPD09N05 Tape and ReelP-TO252 Q67040-S4136

SPU09N05 TubeQ67040-S4130-A2P-TO251

MaximumRatings , at Tj = 25 C, unless otherwise specified

Parameter Symbol UnitValue

Continuous drain current

TC = 25 C

TC = 100 C

9.2

6.5

ID A

Pulsed drain current

TC = 25 C

IDpulse 37

Avalanche energy, single pulse

ID = 9.2 A, VDD = 25 V, RGS = 25

mJEAS 35

Avalanche energy, periodic limited by Tjmax 2.4EAR

Reverse diode dv/dt

IS = 9.2 A, VDS = 40 V, di/dt= 200 A/s

dv/dt 6 kV/s

Gate source voltage VGS 20 V

Power dissipation

TC = 25 C

Ptot 24 W

Operating and storage temperature Tj , Tstg C-55... +175

55/175/56IEC climatic category; DIN IEC 68-1


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SPD 09N05

Thermal Characteristics

Parameter ValuesSymbol Unittyp. max.min.

Characteristics

RthJC - - 6.25 K/WThermal resistance, junction - case

-Thermal resistance, junction - ambient, leded RthJA - 100

-

-

-

-

75

50

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area1)

RthJA

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter Symbol UnitValues

min. max.typ.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA

-V(BR)DSS 55 - V

Gate threshold voltage, VGS = VDS

ID = 10 A

VGS(th) 432.1

Zero gate voltage drain current

VDS = 50 V, VGS = 0 V, Tj = 25 C

VDS = 50 V, VGS = 0 V, Tj = 150 C

-

-

IDSS A

1

100

0.1

-

Gate-source leakage current

VGS = 20 V, VDS = 0 V

IGSS - 10 nA100

Drain-Source on-state resistance

VGS = 10 V, ID = 6.5 A

RDS(on)

- 0.093 0.1

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drainconnection. PCB is vertical without blown air.


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SPD 09N05


Parameter Symbol Values Unitmin. typ. max.

Dynamic Characteristics

Transconductance

VDS2*ID*RDS(on)max , ID = 6.5 A

gfs 3 4.5 - S

Input capacitance

VGS = 0 V, VDS = 25 V, f= 1 MHz

Ciss - 215 270 pF

Output capacitance

VGS = 0 V, VDS = 25 V, f= 1 MHz

Coss - 75 95

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f= 1 MHz

Crss - 45 60

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 9.2 A,

RG = 50

td(on) - 15 25 ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 9.2 A,RG = 50

tr - 20 30

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 9.2 A,

RG = 50

td(off) - 30 45

Fall time

VDD = 30 V, VGS = 10 V, ID = 9.2 A,

RG = 50

tf - 25 40


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SPD 09N05


Parameter Symbol Values Unitmin. typ. max.

Dynamic Characteristics

Gate to source charge

VDD = 40 V, ID = 9.2 A

2 nC1.3Qgs -

- 3.5QgdGate to drain charge

VDD = 40 V, ID = 9.2 A

5.25

Gate charge total

VDD = 40 V, ID = 9.2 A, VGS = 0 to 10 V

- 7 11Qg

Gate plateau voltage

VDD = 40 V, ID = 9.2 A

V(plateau) 5.9 - V-

Reverse Diode

Inverse diode continuous forward current

TC = 25 C

IS - - 9.2 A

Inverse diode direct current,pulsed

TC = 25 C

ISM - - 37

Inverse diode forward voltage

VGS = 0 V, IF = 18.5 A

VSD - 1.05 V1.8

Reverse recovery time

VR = 30 V, IF=IS , diF/dt= 100 A/s

trr - 50 ns75

Reverse recovery charge

VR = 30 V, IF=lS , diF/dt= 100 A/s

Qrr - C0.085 0.13


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SPD 09N05

Power Dissipation

Ptot = f(TC)

0 20 40 60 80 100 120 140 160 C 190

TC

0

2

4

6

8

10

12

14

16

18

20

22

W

26SPD09N05

Ptot

Drain current

ID = f(TC)parameter: VGS 10 V

0 20 40 60 80 100 120 140 160 C 190

TC

0

1

2

3

4

5

6

7

8

9

A

11

SPD09N05

ID

Transient thermal impedance

ZthJC = f(tp)

parameter : D= tp/T

10-7

10-6

10-5

10-4

10-3

10-2

100

s

-310

-210

-110

010

110

K/W

SPD09N05

ZthJC

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

Safe operating area

ID = f(VDS)

parameter : D= 0 , TC = 25 C

10-1

100

101

102

V

-110

010

110

210

A

SPD09N05

ID

RDS(on)

=VDS

/ID

DC

10 ms

1 ms

100 s

10 s

tp = 2.5s


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SPD 09N05

Typ. output characteristics

ID = f(VDS)parameter: tp = 80 s

0.0 1.0 2.0 3.0 4.0 V 5.5

VDS

0

2

4

6

8

10

12

14

16

18

20

A

24

SPD09N05

ID

VGS [V]

a

a 4.0

b

b 4.5

c

c 5.0

d

d 5.5

e

e 6.0

f

f 6.5

g g 7.0

h

h 7.5

i

i 8.0

j

j 9.0

k

k 10.0

l

Ptot = 24W

l 20.0

Typ. drain-source-on-resistance

RDS(on) = f(ID)

parameter: VGS

0 2 4 6 8 10 12 14 16 A 19

ID

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.32

SPD09N05

RDS(on)

VGS [V] =

c

c5.0

d

d5.5

e

e6.0

f

f6.5

g

g7.0

h

h7.5

i

i8.0

j

j9.0

k

k10.0

l

l20.0

Typ. transfer characteristicsID= f(VGS)

parameter: tp = 80 s

VDS 2 x ID x RDS(on) max

0 1 2 3 4 5 6 7 8 V 100

5

10

15

20

A

30

ID

Typ. forward transconductance

gfs = f(ID);Tj = 25C

parameter: gfs

0 2 4 6 8 10 12 14 16 A 200

1

2

3

4

S

6

gfs


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SPD 09N05

Drain-source on-resistance

RDS(on) = f(Tj)

parameter : ID = 6.5 A, VGS = 10 V

-60 -20 20 60 100 140 C 200

Tj

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.34

SPD09N05

RDS(on)

typ98%

Gate threshold voltage

VGS(th) = f(Tj)parameter : VGS = VDS, ID = 10 A

-60 -20 20 60 100 140 V 200

Tj

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

4.4

V

5.0

VGS(th)

min

typ

max

Typ. capacitances

C = f(VDS)

parameter: VGS = 0 V, f= 1 MHz

0 5 10 15 20 25 30 V 40

110

210

310

pF

C

Ciss

Coss

Crss

Forward characteristics of reverse diode

IF = f(VSD)

parameter: Tj , tp= 80 s

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

-110

010

110

210

A

SPD09N05

IF

Tj = 25 C typ

Tj = 25 C (98%)

Tj = 175 C typ

Tj = 175 C (98%)


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SPD 09N05

Typ. gate charge

VGS = f(QGate)parameter: ID puls = 9.2 A

0 2 4 6 8 nC 11

QGate

0

2

4

6

8

10

12

V

16

SPD09N05

VGS

DS maxV0,8

DS maxV0,2

Avalanche EnergyEAS = f(Tj)

parameter: ID = 9.2 A, VDD = 25 VRGS = 25

20 40 60 80 100 120 140 C 180

Tj

0

5

10

15

20

25

30

mJ

40

EAS

Drain-source breakdown voltage

V(BR)DSS = f(Tj)

-60 -20 20 60 100 140 C 20050

52

54

56

58

60

62

64

V

66

SPD09N05

V(BR)D

SS


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