smd type mosfet - kexin.com.cn (kdt2955).pdf · smd type 2 mosfet r p-channel mosfet ndt2955...
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SMD Type
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MOSFET
P-Channel MOSFETNDT2955 (KDT2955)
■ Features ● VDS (V) =-60V
● ID =-2.5 A (VGS =-10V)
● RDS(ON) < 300mΩ (VGS =-10V)
● RDS(ON) < 500mΩ (VGS =-4.5V)
SG D
D
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS -60
Gate-Source Voltage VGS ±20
Continuous Drain Current (Note.1) ID -2.5
Pulsed Drain Current IDM -15
(Note.1) 3
Power Dissipation (Note.2) 1.3
(Note.3) 1.1
Thermal Resistance.Junction- to-Ambient (Note.1) RthJA 42
Thermal Resistance.Junction- to-Case RthJC 12
Junction Temperature TJ 150
Junction Storage Temperature Range Tstg -55 to 150
PD W
V
℃/W
A
℃
Note.1: 42°C/W when mounted on a 1in pad of 2 oz copper
Note.2: 95°C/W when mounted on a .0066 in pad of 2 oz copper
Note.3: 110°C/W when mounted on a minimum pad.
2
2
1.80
(max
)
0.02
~ 0
.1
0.70±0.1
4.60 (typ)
10 。
7.0±
0.3
3.50
±0.2
6.50±0.2
3.00±0.1
2.30 (typ)
SOT-223 Unit:mm
4
1 2 3
0.250
Gauge Plane
1.Gate 2.Drain3.Source
4.Drain
SMD Type
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MOSFET
P-Channel MOSFETNDT2955 (KDT2955)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -60 V
Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -10 uA
Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -2 -4 V
VGS=-10V, ID=-2.5A 300
VGS=-4.5V, ID=-2A 500
VGS=-10V, ID=-2.5A TJ=125℃ 513
On state drain current ID(ON) VGS=-10V, VDS=-5V -12 A
Forward Transconductance gFS VDS=-10V, ID=-2.5A 5.5 S
Input Capacitance Ciss 601
Output Capacitance Coss 85
Reverse Transfer Capacitance Crss 35
Total Gate Charge Qg 11 15
Gate Source Charge Qgs 2.4
Gate Drain Charge Qgd 2.7
Turn-On DelayTime td(on) 12 21
Turn-On Rise Time tr 10 20
Turn-Off DelayTime td(off) 19 34
Turn-Off Fall Time tf 6 12
Body Diode Reverse Recovery Time trr 25
Body Diode Reverse Recovery Charge Qrr 40 nC
Drain-Source Avalanche Energy WDSS Single Pulse, VDD = 30 V, ID = 2.5 A 174 mJ
Maximum Body-Diode Continuous Current IS -2.5 A
Diode Forward Voltage VSD IS=-2.5A,VGS=0V (Note.1) -1.2 V
ns
mΩ
VGS=-10V, VDS=-30V, ID=-1A,RG=6Ω(Note.1)
RDS(On) Static Drain-Source On-Resistance
IF=-2.5A, dI/dt=100A/μs
VGS=0V, VDS=-30V, f=1MHz
VGS=-10V, VDS=-30V, ID=-2.5A (Note.1)
pF
nC
Note.1: Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
■ Marking
Marking * DT2955
SMD Type
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MOSFET
P-Channel MOSFETNDT2955 (KDT2955)
■ Typical Characterisitics
0
3
6
9
12
0 1 2 3 4 5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-I D, D
RA
IN C
UR
REN
T (A
)
VGS = -10V
-7.0V
-4.0V
-4.5V
-5.0V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
2
0 3 6 9 12-ID, DRAIN CURRENT (A)
RD
S(O
N),
NO
RM
ALI
ZED
DR
AIN
-SO
UR
CE
ON
-RES
ISTA
NC
E VGS=-4.5V
-5.0V
-6.0V -7.0V
-8.0V -10V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
RD
S(O
N),
NO
RM
ALI
ZED
DR
AIN
-SO
UR
CE
ON
-RES
ISTA
NC
E ID = -2.5AVGS = -10V
0.05
0.1
0.15
0.2
0.25
0.3
0.35
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
RD
S(O
N),
ON
-RES
ISTA
NC
E (O
HM
)
ID = -1.3A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation withTemperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
0
2
4
6
8
10
2.5 3.5 4.5 5.5
-VGS, GATE TO SOURCE VOLTAGE (V)
-I D, D
RA
IN C
UR
REN
T (A
)
TA = -55oC 25oCVDS = -10V
125oC
0.0001
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2-VSD, BODY DIODE FORWARD VOLTAGE (V)
-I S, R
EVER
SE D
RA
IN C
UR
REN
T (A
) VGS =0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
SMD Type
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MOSFET
.
P-Channel MOSFETNDT2955 (KDT2955)
■ Typical Characterisitics
0
2
4
6
8
10
0 3 6 9 12
Qg, GATE CHARGE (nC)
-VG
S, G
ATE
-SO
UR
CE
VOLT
AG
E (V
) ID = -2.5AVDS = -20V
-30V
-40V
0
200
400
600
800
0 15 30 45 60
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CA
PAC
ITA
NC
E (p
F )
CISS
COSS
CRSS
f = 1 MHzVGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I D, D
RA
IN C
UR
REN
T (A
)
DC
1s100ms
100 s
RDS(ON) LIMIT
VGS = -10VSINGLE PULSER JA = 110oC/W
TA = 25oC
10ms1ms
10s
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk
), PE
AK
TR
AN
SIEN
T PO
WER
(W) SINGLE PULSE
R JA = 110°C/WTA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000t1, TIME (sec)
r(t),
NO
RM
ALI
ZED
EFF
ECTI
VE T
RA
NSI
ENT
THER
MA
L R
ESIS
TAN
CE
R JA(t) = r(t) * R JA
R JA = 110oC/W
TJ - TA = P * R JA(t)Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.