smic power technologies for pmu applications...2014/08/20 · smic confidential 6 smic power...
TRANSCRIPT
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SMIC R&D/Power Aug 20 2014
SMIC Power Technologies For PMU Applications
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SMIC Confidential 2
Outline
PMIC Applications
Power Devices Emphasis and Challenge
SMIC Technologies Development Trend
Design Supporting (Model, IPs, HV IO…)
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SMIC Confidential 3
PMIC Opportunities in Today’s Market
Portable markets – Mobile handsets – Tablets – Ultrabook
LED driver market – Mobile/TV backlighting – Signal – General illumination
AC-DC – Battery chargers – Appliances – Power supplies
3
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SMIC Confidential 4
12%
10%
10%
8% 8% 7%
4%
2% 2% 2% 2%
2% 1% 1%
1% 1% 1%
1% 1%
0% 25%
STMicroelectronics
TexasInstruments
Qualcomm
NXP
Infineon
RenesasElectronics
Power Management IC Market
Power IC MKT and trend Mobile PMIC players
Power IC is about 10% of IC TAM, and diversified among players
Consumer market contributed major volume (>60%) with high increasing rate
Power IC major players
~$30B
Others ~25%
Challenge Looking for high quality, high performance , lower cost solutions .
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SMIC Confidential 5
PMIC Applications Split by Voltage/Current
* Not including data processing , automotive field
WLED Driver for FPD BL in handset DSC, NB,TV
Driver for ultrasonic,
MEMS Adaptors
LED Lighting Ballast, motor driver
5V 12V 20V 40V 100V 200V 500~800V
0.5A
1A
5A
10A
50A
LDO
USB/AP/Audio Speaker in Handset, MP3,DSC
LED Display
Main I/O Power in NB
Main I/O Power in Server, WS, DT
Memory & Graphic in Server, WS, DT
CPU in Server, WS, DT (I>30A)
Memory & Graphic in NB
CPU/GPU in NB (I>20A)
Main/ I/O/ FPD in LCD TV
Lighting LED Driver & Automotive
Telecom Driver/PoE EL lighting
high volume
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SMIC Confidential 6
SMIC Power Technology Revenue
6
PMIC accounts for 20% SMIC 2013 revenue .
0.35µm BCD is in production for 6 years with over 800K wafer shipment.
0.18/0.153µm BCD mass production > 4 years with over 1.5M wafer shipment.
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SMIC Confidential 7
No clear and generic roadmap, guideline for “MTM” Challenge =Opportunity
More than Moore: diverse , features size is not key factor, application specific performance is more critical
ITRS 2011
PMIC Process: One Tech of MTM Category
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SMIC Confidential 8
Logic devices scaled smaller to even smaller sized by nm
Power devices with much more structures still sized by um
10VLDMOS 30VLDMOS
Logic devices and HV power devices with different emphasis
Logic Devices vs HV Power Devices
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SMIC Confidential 9
Power Devices Focus
Power (Muscle)
Analog (Sense)
Digital (Brain)
1. Ron/BV
2. Isolation
3. Reliability
4. FOM ~ Specific application.
1. CMOS gm, Rout,
2. BJT gain, EA, BV
3. Res, Cap linearity, Vcc/Tcc.
4. Noise, matching,
5. Trim :fuse, OTP, MTP..
Considerations for power devices
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SMIC Confidential 10
HV LDMOS Device Challenge
Parameters to define LDMOS : ― Electrical: Vgs, Vds, Vs_sub, Vd_sub, Ron/BV, Ron/Qg, SOA etc ― Physical: much more layout parameters depended. (no generic structure)
GT
P- Sub
N+
Drift
S
Drain STI
Body
Vgs=LV/MV Vds=HV
Drain + STI
X1 X2 X3 X4
X5
Deep well
D
Iso_STI
Pick up Source+
B GR
GR
X6
Pick up
HVLDMOS
Parameters to define CMOS: ― Electrical : Vop (Vgs=Vds), Vt, BV, Ion/Ioff, …. ― Physical: W/L, Well (almost standardized structure)
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SMIC Confidential
Typical HV LDMOS Id-Vd Curve
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0
100
200
300
400
500
0 5 10 15 20 25 30 35 40 45
ID(u
A/um
)
Vds(V)
NLDMOS SOA
VG=0
VG=1
VG=2
VG=3
VG=4
VG=5
VG=6
VG=7
VG=8
Ron
Rout
Quasi-Saturation
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SMIC Confidential 12
……
Short Term (Dev.
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SMIC Confidential
0.18um BCD: – High BV up to 60V
– Even low Ron for switching (Si data will be ready in Q4/14)
PMU for cellphone
50mΩ.mm2/70V
Switching Charger etc.
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HV Devices on Baseline: Low Ron
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SMIC Confidential 14
0.18um 1.8/5V: 5V devices enhancement for power switch
Enhanced
Standard Enhanced
Standard
Developing Power Devices in 0.18um PMU
Parameter Unit Standard Device Enhanced
Device Difference
Pitch um 1.1 0.89 -19%
Vthi V 0.82 0.904
Idlin uA/um 62 93.82 51%
Ron mohm*mm2 1.85 0.95 -49%
Idsat uA/um 580 712 23%
Ioff pA/um 0.1 0.1
BV V 11 11
Parameter Unit Standard Device Enhanced
Device Difference
Pitch um 1 0.84 -16%
Vthi V -0.84 -1.097
Idlin uA/um -15.8 -25.74 63%
Ron mohm*mm2 6.58 3.26 -50%
Idsat uA/um -280 -426 52%
Ioff pA/um -0.1 -0.1
BV V -9 -10
5V NMOS 5V PMOS
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SMIC Confidential
65nm LP: 1.2/2.5V process 5V LDMOS enhancement for power
Developing Power Devices in 65nm LP
Parameter Unit Standard Device Enhanced
Device Difference
Pitch um 0.83 1.16 40%
Vthi V 0.55 0.55
Idlin uA/um 24.4 45.7 87%
Ron mohm*mm2 3.41 2.54 -26%
Idsat uA/um 440 464 5%
Ioff pA/um 0.44 0.29
Rout@Vg=2V ohm 2,381 11,111 367%
BV V 10.8 10.8
Parameter Unit Standard Device Enhanced
Device Differen
ce Pitch um 0.83 1.16 40%
Vthi V -0.55 -0.55
Idlin uA/um -8.5 -18.7 120%
Ron mohm*mm2 9.76 6.2 -36%
Idsat uA/um -245 278 -213%
Ioff pA/um -0.41 -0.35
Rout@Vg=-2V ohm 1,503 7,142 375%
BV V -10.8 -10.8
5V LDNMOS (Vgs=2.5V) 5V LDPMOS (Vgs=2.5V)
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SMIC Confidential 16
Accuracy HV power devices modelling
Full set of design documents
― DRC/LVS/xRC
― PDK (flexible p-cell)
Rich logical compatible IP re-usable
― Standard cell, SRAM, IO…
Customization IP supporting
― 3rd part OTP…
― In house e-Fuse…
― Applications’ specific HV IO…
LV Clamp with DNW
HV Clamp
25C Si& fitting
125C Si& fitting
Power Technology Design Supporting
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SMIC Confidential 17
Work Together, Win the Future
Process and design mutual understanding & interaction is
essential for power analog products.
Virtual IDM: welcome CTM as partner join-in at development stage.
Flexible and optimized solutions for target applications
MTE: Significantly reduce chip size for logic intensive design
HVBCD: Less mask layers for high voltage, logic less design
SVX LDMOS: embedded high performance extendable voltage power
devices with excellent isolation.
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Thank You