soi industry consortium - engineered substrates enabling the iot … · 2019. 7. 22. · engineered...

Engineered substrates

– enabling the IoT

revolutions

Eunseok PARK , Ph.D.

Strategic Marketing, Soitec

SOI Consortium, July 2019, San Francisco

2

2.1

2.2

Engineered substrates for…

FD-SOI for AIoT

RF/FD-SOI for IoT Connectivity

1 IoT Innovation starts at substrate level

2.3 InGaNoS for MicroLED

Outline

3 Closing remarks

July. 2019 SOI Consortium Conference Soitec Proprietary Copyright @ 2019 Soitec 3

IoT eco-system

Devices with various

sensors

Things

Wire & Wireless,

Connectivity

Network (Gateway)

Intelligence, Analysis,

Management

Data Analytics (Cloud/Edge)

Valuable Service for

Human Revolution

Service

IoT Solution

New Function + Differentiated HW/SW Solution

Provide new value & experience

Email, Text,

Notification

User Interface

IoT will change our lives!


Smart Design Smart

Manufacuring

Smart Machine Smart

City/Home

Main Driver for IoT


IoT challenges at system level


Components

integration

Low power

consumption

Cost

effectiveness

Computing performance

Seamless

connection

High SNR sensor

Form factor

Functional reliability

Engineered substrates allow us to push boundaries


IoT Innovation

Using more MATERIALS

Crystal on crystal

(lattice compatible)

Crystal on crystal

(lattice compatible) Crystal on crystal

(not lattice

compatible)

Crystal on

amorphous

Smart-CutTM

Thin & highly uniform layers

Applying unique PROCESSES

Soitec’s full range of engineered substrates across

multiple segments and applications


RF

Front-End Module

RF-SOI For high efficient mobile

communication

Power

Power-SOI For seamless high voltage

device isolation

Processor &

connectivity SoC

FD-SOI For power-efficient &

flexible digital computing

with easy

analog/RF integration

Piezo on insulator

POI New engineered substrates

for filters

Photonics

Photonics-SOI To integrate high

performance photonics

devices into silicon

Imagers

Imager-SOI For improved imager

performance in NIR

uLED

InGaNoS

Bright Low Power Led - RGB

Screen – AR/VR

Power

SiC engineered substrates

AC/DC inverter – Charger

– HP transistors

MEMs

Cavity – SOI

High Perf Sensors

Ultrasonic - Sensors

Others

Compounds, etc…

High Perf Devices

To be defined

R&D

Production

V2V – V2X - Cellular IVN – Audio – Gate Driver

uController – Processors

– Radar 77GHz Today in data center Today in cell phones Ramp in 2019 in cell phones

Engineered substrate for IoT Solution


FD-SOI offers low power

consumption for industrial

& consumer applications

FD-SOI & InGaNOS enable

integrated module for seamless

connection & low power display

FD-SOI offers the best value

proposition for AI computing on

edge IoT devices

Cloud

Edge

Power

consumption

Speed

performance

FD-SOI will now

address those areas

On Device

Smartwatches (GPS) Ear buds

Security cameras

Smarthome

speakers

Smart meters

Drones

FDSOI for ASICs

of AR/VR/MR

FDSOI for IoT

integrated module

InGaNoS for MicroLED

display of AR/HUD &

Smartwatch

2

2.1

2.2


FD-SOI for AIoT




Outline

3 Closing remarks

Multiple connectivity standard that make things

communicate seamlessly over the Internet


Always connected in indoor & outdoor → Mix of connectivity standard

Low Power Wide Area Network & Cellular

Local Area Network

FD-SOI offers superior low power consumption

for NB-IoT and bluetooth low energy applications

July. 2019 SOI Consortium Conference Soitec Proprietary Copyright @ 2019 Soitec 12 12

[RF-CMOS technology landscape]

Small form factor & always on

→ Low power one-chip solution

2

1 Integrated RF capabilities of FD-SOI

- Low system cost & small form factor

RF in FD-SOI – for digital integration

Lower RF power & operating voltage

(reducing power consumption 76 %*)

- Improves battery life

* Sony smartwatch GPS power consumption gains by switching to FD-SOI technology

FD-SOI offer unrivalled IoT integration


PA Filter

Antenna

Tuner

Switch Phase

Array

LNA

Enveloppe

Tracker

RF Front End

PLL

DAC

I

O

Serdes

Mixer

Beamformer

ADC

Transceiver

Base

Band

I

O

Processor

+ AI

Base Band

5G sub 6GHz Cellular

& Infrastructure

LDMOS, III-V

Bulk - SiGe

Bulk - FinFET sub 22nm

Bulk - RF CMOS 28nm

Bulk - FinFET sub 14nm

Bulk - CMOS < 28nm

IoT long range

Combo connectivity Bulk - SiGe, RF CMOS

Bulk - CMOS < 40nm

5G mmW Cellular

& Infrastructure

III-V

Bulk - SiGe, RF CMOS

Bulk - FinFET sub 22nm Bulk - FinFET sub 14nm

IoT short range Bulk - RF CMOS < 65nm

RF-SOI

Piezo

RF-SOI Piezo, III-V

PD-SOI / HR < 65nm

FD-SOI

FD-SOI

FD-SOI

FD-SOI

2

2.1

2.2


FD-SOI for AIoT




Outline

3 Closing remarks

A dynamic and prolific evolution of AIoT applications


› Always-ON surveillance

› AI enabled features

› Thief detection

› Smart wake-up (user detection)

› Battery powered surveillance camera

› Local AI inference

› Automatic detection of abnormalities

› Low power / low bandwidth RF

› Privacy ensured by design

› Always-ON & battery powered

› Local speech inference

› Human like interaction (no latency)

› Privacy ensured by design

AIoT is Heterogeneous computing to transform data into

meaningful information


Classification

Object Detection

Speech Detection

Heterogeneous Computing Key Challenge

Main task controller (CPU) + accelerating units (GPU, DSP, ISP,

NPU) for specified tasks

FD-SOI engineered substrates enable AIoT


Source: Dolphin Integration, 2018

> 1.5Ghz ~1Ghz 200Mhz < 50Mhz

Body-bias impact (AVS, ABB) on energy efficiency

En

erg

y e

ffic

ien

cy g

ain

FD-SOI can increase energy efficiency

gains by 7 by leveraging

its unique body-bias capability

Typical AIoT power range

1.2X

2X

4X

7X

FD-SOI – powering the AIoT revolution


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i.MX RT600 crossover processors unlocking the

potential of machine learning and artificial

intelligence at the edge, are based on FD-SOI

Next generation always-on FPGA low power machine

learning inferencing (1mW ~ 1W) based on FD-SOI

Next generation Human Machine Interfaces powered

by AI ambient computing based on FD-SOI

Rockchip RK1808, an AIoT solution with built-in

3TOPs NPU solution, designed for various AI

applications is based on FD-SOI

New Renesas R7F0E embedded energy harvesting

chipset, opening a self-powered future for IoT devices

based on FD-SOI

2

2.1

2.2


FD-SOI for AIoT




Outline

3 Closing remarks

Display Market


Traditional Market Emerging Market

Display Technology Trend


[Display Market Technology Needs]

Requirements Tech Trend

High contrast/Color

gamut/Power consumption In-direct emission → Direct emission

High durability Organic → In-organic

High resolution with fast

response time

<3,000 PPI with um → >3,000 PPI with nm

60Hz (16ms) → > 90Hz (<11ms)

Free form factor Rigid glass film → Soft plastic film

InGaNoS for true RGB MicroLED solution


Pre-patterned

Layer Transfer

Relaxed InGaN

Value Proposition Technology Advantages from Soitec InGaNoS

Layer transfer from free standing GaN wafer

-Lower TDD (Threading Dislocations Density)

RGB on Same wafer

-Removing green gap and can generate green and

red without color conversion layer

Pre-patterned InGaNoS template

-No need to do eching to define the mesa structure

of LEDs

Choice of

Handling

Wafer

InGaN layer on any handing wafer

-Choice of handling wafer between Sapphire and

Silicon

High EQE in lower driving current density

- It will give high EQE in low current region → Better efficient MicroLED

Uniform operation & Low cost manufacturing

-Reducing epitaxy cost and uniform behavior /conditions & low cost

manufacturing

High EQE by removing sidewall effect

-Due to initial trench used for relaxation, no need to do dry eching → Sidewall

defect could be minimized

Support various partners based on needs

-Silicon: Low cost, bigger size, surface emitter, fast heat dissipation

-Sapphire: Used by many companies (standard), Better crystal quality

MicroLED as next generation display


› Wearables

• Low power

• Sensors on display

› Mobile Devices/Big Screen Displays

• High contrast & color gamut

• Long lifetime

› ARs/MRs/HUD

• High brightness

• Fast response

[2~3 Years]

[3~5 Years]

[5+ Years]

IoT with AI & 5G are at the heart of the next

human (r)evolution

Engineered substrates play a pivotal role in IoT

technologies such as system integration, low

power consumption computing & display

IoT - A bright future lies ahead for engineered

substrates!

Closing Remarks

Thank you

Follow us on:

For more information, visit us at:

Soitec

@Soitec_FR / @Soitec_EN

Soitec

www.soitec.com

25 Oct. 2018 S3S Conference Soitec Proprietary Copyright @ 2018 Soitec

soi industry consortium - engineered substrates enabling the iot … · 2019. 7. 22. · engineered...

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