solid state devices (diode)

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Solid State Devices (Diode)

1. The name of pure semiconductormaterial that has an equal number ofelectrons and holesA. n-typeB. pure typeC. intrinsic

D. p-type

2. Elements that has four valenceelectrons are classified asA. conductorB. insulatorC. elemental semiconductorD. compound semiconductor

3. An example of an elementalsemiconductor.A. Germanium (Ge)B. Gallium Arsenide (GaAs)C. Gallium Phosphide (GaP)D. Aluminum Arsenide (AlAs)

4. Which of the following is an exampleof a compound semiconductor?A. Gallium Arsenide (GaAs)B. Gallium Phosphide (GaP)C. Aluminum Arsenide (AlAs)D. All of the above

5. Germanium has an atomic number of 32and an atomic weight ofapproximately 72 amu. How manyelectrons, protons and neutrons are

there?A. 32, 32, 40B. 32, 32, 104C. 40, 32, 32D. 40, 32, 104

6. The chemical bond that is present ina crystal lattice of silicon atoms.A. covalent bondB. electrovalent bondC. ionic bondD. metallic bond

7. The atomic weight of a silicon atom

is approximately 28 amu. How many

electrons, protons and neutrons doesthe atom consist?A. 14, 42, 14B. 14, 14, 42C. 42, 14, 14D. 14, 14, 14

8. What is the total charge at thenucleus of silicon atom?A. -12e CB. 12e CC. -14e CD. 14e C

9. In materials, what do you call thearea that separates the valence bandand the conduction band?A. energy gapB. forbidden bandC. insulation bandD. A and B are correct

10. At absolute zero temperature,semiconductor acts asA. an insulatorB. a conductorC. a semi-insulatorD. usual

11. The electron flow in a semiconductormaterial isA. opposite in direction of hole

flow

B. the same direction with hole flowC. the drift currentD. known as the conventional current

12. Typical range of the resistivity ofa semiconductorA. 10-15 – 10-18 Ω-cmB. 10-5 – 10-8 Ω-cmC. 10 – 104 Ω-cmD. 108 – 1015 Ω-cm

13. Chemical bond that is significant inmetalsA. ionic bondingB. electrovalent bonding

C. covalent bondingD. metallic bonding

14. A semiconductor that is free fromimpuritiesA. intrinsic semiconductorB. extrinsic semiconductorC. compensated semiconductor

D. elemental semiconductor

15. The process of adding impurities ina semiconductor material.A. growingB. diffusionC. dopingD. depleting

16. Impurities with five valenceelectrons.A. acceptorB. donorC. trivalentD. pentavalent

17. Example of acceptor impurities.A. pentavalent impuritiesB. trivalent impuritiesC. tetravalent impuritiesD. hexavalent impurities

18. If the substance used in doping hasless than four valence electrons, itis known as

A. Acceptor

B.

DonorC. Trivalent

D. Pentavalent

19. Commonly used as donor impurities.A. Antimony (Sb)B. Arsenic (As)C. Phosphorus (P)D. all of the above

20. Example of trivalent impurities.A. Boron (B)B. Gallium (Ga)

C. Indium (In)D. all of the above



21. Donor-doped semiconductor becomes a

A. N-type semiconductorB. good conductorC. p-n semiconductorD. P-type semiconductor

22. What do you call a semiconductorthat is doped with both donor andacceptor impurities?A. double doped semiconductorB. compensated semiconductorC. compound semiconductorD. diffused semiconductor

23. The resistance of a semiconductor isknown asA. bulk resistanceB. intrinsic resistanceC. extrinsic resistanceD. dynamic resistance

24. The most extensively used

semiconductor.A. siliconB. germaniumC. gallium phosphideD. gallium arsenide

25. Semiconductor whose electron andhole concentrations are equal.A. extrinsic semiconductorB. intrinsic semiconductorC. compensated semiconductorD. doped semiconductor

26. Silicon is widely used over

germanium due to its severaladvantages, what do you think is itsmost significant advantage?A. abundantB. cheapC. temperature stableD. low leakage current

27. Current flow in a semiconductor thatis due to the applied electricfield.A. diffusion currentB. conventional currentC. drift velocityD. drift current

28. The movement of charge carriers in asemiconductor even without theapplication of electric potential.A. diffusion currentB. conventional currentC. drift currentD. saturation current

29. Typically, how much energy isrequired for a valence electron tomove to the conduction band for adoped semiconductor?A. 0 eVB. 0.05 eVC. 1.0 eVD. 5.0 eV

30. Conduction of electrons in a dopedsemiconductor happens at A. conduction bandB. forbidden bandC. valence band

D. nuclei band

31. Theoretically, where does theconduction of holes occur in a dopedsemiconductor?A. conduction bandB. forbidden bandC. valence bandD. empty band

32. In energy band diagram of a dopedsemiconductor, the donor levelA. is near the valence bandB. is near the conduction band

C. is exactly in between the valenceand conduction band

D. depends on the amount of doping

33. The acceptor level in a dopedsemiconductorA. is near the valence band levelB. is near the conduction levelC. is exactly in between the

conduction and valence bandD. will depend on the concentration

of doping

34. In a semiconductor material, whatwill happen to the number of free

electrons when the temperaturerises?

A. Increases

B. decreases exponentially

C. decreases

D. Remains the same

35. The electrical resistance of a

semiconductor material will ________as the temperature increases.A. increaseB. increase exponentiallyC. decreaseD. not change

36. The potential required to removed avalence electronA. valence potentialB. threshold potentialC. critical potentialD. ionization potential

37. Among the given elements, which isconsidered as nonmetal?A. silicon (Si)B. germanium (Ge)C. tin (Sn)D. lead (Pb)

38. A semiconductor that is classifiedas a metalloid or semimetalA. silicon (Si)B. germanium (Ge)C. tin (Sn)D. carbon (C)

39. Semiconductor that is very rare, itonly occurs in minute quantities inmany metal sulfidesA. silicon (Si)B. germanium (Ge)C. tin (Sn)D. lead (Pb)

40. Compound semiconductors are alsoknown asA. compensated semiconductorsB. amorphous semiconductorsC. organic semiconductors

D. inner-mettalic semiconductors



41. What semiconductor that is mostlyused in devices requiring theemission or absorption of lights?A. amorphous semiconductorB. organic semiconductorC. compound semiconductorD. elemental semiconductor

42. For high-speed integrated circuit,which semiconductor material givenbelow is best to be used?A. siliconB. germaniumC. carbonD. gallium arsenide

43. How much impurity concentration isneeded for a sample of silicon tochange its electrical property froma poor conductor to a goodconductor?

A. one part per hundred

B.

one part per thousandC. one part per million

D. one part per billion

44. The restriction of certain discreteenergy levels in a semiconductormaterial can be predicted generallyby using what model?

A. Bohr model

B. string model

C. wave model

D. particle model

45. Is defined as the energy acquired byan electron moving through apotential of one volt.A. electron Joules (eJ)B. electron-potentialC. oxidation potentialD. electron Volt (eV)

46. At room temperature, in a perfectsilicon crystal, the equilibriumconcentration of thermally generatedelectrons in the conduction band is

aboutA. 1.5 x 105 per cubic cm.

B. 1.5 x 1010 per cubic cm.C. 1.5 x 1015 per cubic cm.D. 1.5 x 1020 per cubic cm.

47. What is the basis in operation ofsemiconductor photoconductors?A. EHP generationB. EHP degenerationC. EHP optical degenerationD. EHP optical generation

48. The semiconductor that is used inxerographyA. selenium (Se)B. gallium phosphide (GaP)C. cadmium compoundD. organic semiconductor

49. A silicon material has an intrinsicconcentration ni=10

10 per cubiccentimeter at room temperature. Ifit is doped with 1015 antimony atomsper cubic centimeter, what is now

the approximate electronconcentration at the conductionband?A. 105 electronsB. 1010 electronsC. 1015 electronsD. 1020 electrons

50. When an electron at the conductionband falls back to the valence bandit will recombine with the hole.This is known asA. regenerationB. reunion

C. combinationD. recombination

51. Which semiconductor is mostly usedto detect near infrared?A. siliconB. germaniumC. carbonD. silicon carbide

52. What semiconductor that is good forhigh-temperature applications?A. indium antimonide (InSb)B. gallium anitmonide(GaSb)C. silicon carbide (SiC)

D. diamond (C)

53. Among the given semiconductorsbelow, which has the highestmobility?A. siliconB. germaniumC. gallium arsenideD. indium antimonide

54. A semiconducting glass is known asA. isomorphous semiconductorB. amorphous semiconductorC. organic semiconductorD. compound semiconductor

55. For an electroluminescent of greenand red lights, which semiconductoris best?A. silicon carbideB. gallium arsenideC. indium antimonideD. gallium phosphide

56. Typical range of power dissipationfor a semiconductor to be consideredas “low power” or “small signal” A. less than 1 wattB. 5 < P < 10 wattsC. 10 < P < 20 wattsD. 20 watts above

57. In the design of high powersemiconductor devices, it involveswhat factors?A. making the size of the

semiconductor bigger

B. packing the device into a biggercase

C. excellent contact between thesemiconductor and the case

D. all of the above

58. How to have a better high-frequencyresponse in designing semiconductordevices?A. make the chip as small as

possibleB. the leads should be made shorter

and smallerC. smaller packagingD. all of the above



59. Before an electron can participate

in the conduction of electricity, itmust leave from the valence band andtransfer to the conduction band.Transferring to the conduction bandinvolves energy acquisition by anelectron from external sources andthis energy must be greater than theenergy gap of the material. Whichsemiconductor material has thehighest energy gap?A. Zinc Sulfide (ZnS)B. silicon (Si)C. germanium (Ge)D. Indium Antimonide (InSb)

60. Which of the followingsemiconductors has the smallestenergy gap?A. ZnSB. SiC. Ge

D. InSb

61. The ease with which a charge carrier(electron or hole) moves in asemiconductor material is known asmobility. It is also defined as theaverage drift velocity of electronsand holes per unit electrostaticfield. Which of the semiconductormaterials has the highest value ofelectron-mobility?A. InSbB. GeC. Si

D. AlP

62. In semiconductor materials,electrons have a higher value ofmobility than holes, but whichsemiconductor material has theslowest electron-mobility?A. InSbB. GaPC. GaAsD. AlP

63. Solar cell is a semiconductorelectric-junction device, whichabsorbs the radiant energy of

sunlight and converts it directlyand efficiently into electricalenergy. This device, uses what typeof semiconductor materials?A. single-crystal siliconB. amorphous or polycrystalline

siliconC. GaAs, CdS, CdTe, CuSD. all of the above

64. What is formed when n-type and p-type semiconductors are broughttogether?A. pn junctionB. semiconductor junctionC. energy band gapD. semiconductor diode

65. PN junction acts as a one way valvefor electrons because _________.A. the circuit in which the diode is

used, only attempts to pumpelectrons in one diode

B. electrons tend to follow thedirection of the hole

C. there is a little mechanicalswitch inside a diode

D. when electrons are pump from P toN, free electrons and holes areforce apart leaving no way forelectrons to cross the junction

66. The device that is formed when an n-type and p-type semiconductors arebrought togetherA. pn junctionB. semiconductor junction

C. depletion regionD. junction diode

67. An external voltage applied to ajunction reduces its barrier and aidcurrent to flow through the junctionA. reverse biasB. external biasC. junction biasD. forward bias

68. A device containing an anode and acathode or a pn junction of asemiconductor as the principal

elements and provides unidirectionalconduction.

A. Diode

B. Diac

C. Triode

D. Triac

69. Unidirectional conduction in two-

electrodes in any device other thana diode, such that rectificationbetween the grid and cathode of atriode, or asymmetrical conductionbetween the collector and base of atransistor is calledA. rectificationB. diode actionC. clippingD. clamping

70. The p-type material in asemiconductor junction diode istechnically termed as

A. positive terminalB. negative terminalC. cathodeD. anode

71. Cathode in a semiconductor junctiondiode is referred to theA. positive terminalB. junctionC. p-type terminalD. n-type terminal

72. The area in the semiconductor diode

where there are no charge carriersA. depletion layerB. depletion regionC. depletion modeD. depletion area

73. Depletion region is an area in asemiconductor device where there areno charge carriers exist. This willbe always near the junction of n-type and p-type materials. Whatcauses this junction to be depletedby charge carriers?A. Due to the recombination of

holes and electrons at thejunction



B. Due to the cancellation ofpositively charge protons andnegatively charge electrons

C. Due to the annihilation ofcharge carriers

D. Due to the combination ofpositively charge holes andnegatively charge electrons

74. A junction diode is said to beforward-biased ifA. Anode is supplied more positive

than the cathode.B. Anode is supplied more negative

than the cathode.C. A voltage greater than threshold

is applied, with cathode lesspositive than anode.

D. A voltage greater than thresholdis applied, with cathode lessnegative than anode.

75. What do you call the very small

amount of current that will flow inthe diode when it is reverse biased?A. saturation currentB. reverse saturation currentC. cut-off currentD. holding current

76. When the diode is supplied withforward direction potentials butwith a magnitude less than thethreshold voltage of the diode,still it will not “turn-on” and willonly allow a very small amount ofcurrent to pass. This very small

current is knownA. as leakage currentB. as forward saturation currentC. as holding currentD. as cut-off current

77. The minimum voltage required beforea diode can totally conduct in aforward direction.A. triggering voltageB. breakdown voltageC. saturation voltageD. threshold voltage

78. What will happen to the thresholdvoltage of the diode when itoperates at higher temperatures?A. increasesB. increases exponentiallyC. decreasesD. decreases exponentially

79. The forward current in a conductingdiode will ______________ as theoperating temperature increases.A. not be affectedB. decreaseC. decrease exponentiallyD. increase

80. As the operating temperature of areverse-biased diode is increased,its leakage or reverse saturationcurrent willA. IncreaseB. increase exponentiallyC. decrease

D. decrease exponentially

81. The small value of direct currentthat flows when a semiconductordevice has reverse biasA. surge currentB. bias currentC. reverse currentD. current limit

82. Normally, diodes will not conductwhen reverse-biased, but if thereverse voltage is increasedfurther, a point will be reached

where the diode gives up andallowing the current to surge. Thisvoltage is one of the limitingparameter of diodes and is known asA. breakdown voltage (VBR)B. peak inverse voltage (PIV)C. peak reverse voltage (PRV)D. all are correct

83. For a silicon diode, calculate thecurrent at room temperature if theforward voltage VF = 0.3 V and thereverse saturation current IS = 100nA.A. 32.8 μA

B. 10.8 μA C. 32.8 mAD. 10.8 mA

84. The breakdown voltage of a junctiondiode will ___________A. Increase as operating temperature

rises.B. Increase exponentially as

operating temperature rises.C. Decrease as operating temperature

rises.D. Not change as operating

temperature rises.

85. Calculate the new threshold voltageof a germanium diode when itoperates at 100 0C.A. 0.113 VB. 0.188 VC. 0.215 VD. 0.513 V

86. A silicon diode has a reversesaturation current of 50 nA at roomtemperature. If the operatingtemperature is raised by 50°C, whatis now the reverse saturationcurrent?A. 105.56 nAB. 287.73 nAC. 827.89 nAD. 1.66 µA

87. In every increase of 10°C in theoperating temperature of a diodewill cause its reverse saturation

current toA. decreaseB. doubleC. tripleD. quadruple

88. What do you call the resistance ofthe diode when operating at a steadystate voltage?A. dc resistanceB. dynamic resistanceC. ac resistanceD. average resistance



89. The resistance of the diode that issignificant when operating with asmall ac signalA. dc resistanceB. static resistanceC. dynamic resistanceD. average resistance

90. When a diode is used in large acvoltages, the resistance that is tobe considered isA. dc resistanceB. static resistanceC. dynamic resistanceD. average resistance

91. At forward bias condition, what willhappen to the diode resistance whenthe applied voltage is increased?A. will also increaseB. will increase exponentiallyC. will decreaseD. will not change

92. The primary use of Zener diode inelectronic circuits.A. resistance regulatorB. rectifierC. voltage regulatorD. current regulator

93. What phenomenon in electronics doesan avalanche breakdown primarilydependent?A. DopingB. RecombinationC. Ionization

D. Collision

94. When a diode is reverse biased thedepletion region widens, since it isin between positively charge holesand negatively charge electrons, itwill have an effect of a capacitor,this capacitance is called what?A. diffusion capacitanceB. storage capacitanceC. stray capacitanceD. transition capacitance

95. In a semiconductor diode, the totalcapacitance, that is the capacitance

between terminals and electrodes,and the internal voltage variablecapacitance of the junction iscalledA. diffusion capacitanceB. transition capacitanceC. depletion-region capacitanceD. diode capacitance

96. What capacitance is significant whenthe diode is forward biased?

A. diffusion capacitance or storagecapacitance

B. transition capacitance

C. depletion-region capacitance

D. stray capacitance

97. A diode that is especially designedto operate as a voltage-variablecapacitor. It utilizes the junctioncapacitance of a semiconductordiode.

A. varactorB. varicapC. varistorD. A and B are correct

98. The capacitances of a varactor will_______ when the forward biasvoltage is increased.

A. Increase

B. Decrease

C. exponentially decrease

D. not change

99. The time taken by the diode tooperate in the reverse conditionfrom forward conductionA. reverse recovery timeB. forward recovery timeC. reverse holding timeD. reverse time constant

100. In operating a diode at high-speed switching circuits, one of themost important parameters to beconsidered isA. ac resistanceB. diode capacitance

C. noise figureD. reverse recovery time (trr )

101. The time required for forwardvoltage or current to reach aspecified value after switching thediode from its reverse-to-forward-biased state.

A. reverse recovery time

B. forward recovery time (tfr )C. saturation time

D. conduction time

102. The maximum power the diode canhandle.A. maximum derating powerB. maximum consumption powerC. breakdown powerD. maximum dissipation power

103. What is the most importantspecification for semiconductor

diode?A. Forward resistanceB. Reverse resistanceC. Peak inverse voltageD. Current capacity

104. What will happen to the powerhandling capability of the diode ifit is to be operated at a highertemperature?

A. Decreases

B. Increases

C. increases exponentiallyD. will not be affected

105. Diode parameter that will informthe user as to what factor the powerhandling capability of the diodedoes is reduced as the operatingtemperature is increased.

A. power derating factor

B. power dissipating factor

C. power reduction constant

D. all of the above



106. A certain diode has a maximumpower dissipation of 500 mW at roomtemperature and a linear powerderating factor of 5.0 mW/°C. Howmuch power the diode can handle ifoperated at 50°C.

A. 625 mW

B. 505 mW

C. 495 mW

D. 375 mW

107. A semiconductor deviceespecially fabricated to utilize theavalanche or zener breakdown region.This is normally operated in thereverse-region and its applicationis mostly for voltage reference orregulation.

A. varactor diode

B. zener diode

C. shockley diode

D. Schottky barrier diode

108. Refers to a special type ofdiode which is capable of bothamplification and oscillation.A. Junction diodeB. Tunnel diodeC. Point contact diodeD. Zener diode

109. The effect obtain when theelectric field across asemiconductor is strong enough which

causes the free electrons to collidewith valence electrons, therebyreleasing more electrons and acumulative multiplication of chargecarriers occur. A. GunnB. avalancheC. tunnelingD. diffusion

110. A negative resistance diodecommonly used in microwaveoscillators and detectors, it issometimes used as amplifiers. Thisdevice is also known as Esaki diode.

A. varactor diode

B. Schottky diode

C. IMPATT diode

D. tunnel diode

111. A rectifying metal-semiconductorjunction

A. Schottky barrier diode

B. surface barrier diode

C. hot-carrier or hot-electron diode

D. all of the above are correct

112. Diode whose negative resistancedepends on a specific form ofquantum-mechanical bond structure ofthe material

A. Gunn diode

B. tunnel diode

C. TRAPATT diode

D. backward diode

113. One of the electronicsemiconductor devices known as diac,function as

A. Four terminal multi-directionalswitch

B. Two terminal bi-directionalswitch

C. Two terminal unidirectionalswitch

D. Three terminal bi-directionalswitch

114. Another name of a three-layerdiode. This is also considered as anac diode.

A. Shockley diode

B. Thyrector

C. Thyristor

D. Diac

115. A diode whose negativeresistance is dependent on theclassical effects of phase shift

introduced by the time lag betweenmaximum field and maximum avalanche

current, and by the transit timethrough the device.

A. Read diode

B. IMPATT diode

C. TRAPATT diode

D. all of the above

116. What semiconductor diode that

have a fine wire (called a cat-whisker) whose point is in permanentcontact with the surface of a waferof semiconductor material such assilicon, germanium or galliumarsenide?

A. point-contact diode

B. diac

C. PiN diode

D. thyrector

117. When the p-n junction of a

semiconductor diode is inserted withan intrinsic material, the diodebecomes a

A. backward diode

B. Read diode

C. Schokley diode

D. PiN diode

118. A four layer semiconductor diodewhose characteristic at the firstquadrant is similar to that of asilicon-controlled rectifier (SCR).

A. Shockley diodeB. Thyrector

C. Schottky diode

D. diac

119. A diode that is especiallyprocessed so that its high-currentflow takes place when the junctionis reverse-biased. It is a variationof a tunnel diode.

A. Esaki diode

B. Read diode

C. zener diode



D. backward diode

120. A silicon diode that exhibits avery high resistance in bothdirections up to certain voltage,beyond which the unit switches to alow-resistance conducting state. Itcan be viewed as two zener diodesconnected back-to-back in series.

A. bizener diodeB. diac

C. thyristor

D. thyrector

121. A type of Read diode that uses aheavily doped n-type material as itsdrift region

A. IMPATT diode

B. TRAPATT diode

C. TUNNETT diode

D. MITATT

122. A device containing more thanone diode. An example is the full-wave bridge-rectifier integratedcircuit.

A. diode array

B. diode IC

C. diode pack

D. combined diode

123. Is the combination of theinductance of the leads andelectrodes, capacitance of thejunction, and the resistance of thejunction of a semiconductor diode.

A. diode impedance

B. diode ac resistance

C. diode reactance

D. diode ac parameter

124. In a reverse-biased pn junction,the sudden large increase in current

that occurs when a particular valueof reversed voltage is reached, and

which is due to ionization by thehigh intensity electric field in thedepletion region.

A. Zener effect

B. Hall effect

C. breakdown voltage

D. ionization

125. The appearance of RF currentoscillations in a dc-biased slab ofn-type gallium arsenide in a 3.3 kVelectric field

A. Gunn effect

B. Hall effect

C. Zener effect

D. avalanche

126. The impedance presented by ajunction operating in its zenerbreakdown region.

A. diode impedanceB. zener impedance

C. breakdown impedance

D. critical impedance

127. A curve showing the relationshipbetween the voltage and the currentof the diode at any giventemperature

A. characteristic curve

B. transfer curve

C. transfer characteristic curveD. all are correct

128. The line that is plotted in thediode characteristic curve whichrepresents the load

A. linear line

B. operating line

C. load line

D. transfer load line

129. Diode is said to be operating at

a point where the characteristic

curve and the load line intersect.This point is technically termed as

A. Q-point

B. operating point

C. quiescent point

D. all are correct130. What will happen to the

magnitude of the load-line slopewhen the load resistance is

decreased? A. it will also decrease

B. it will increase

C. it will increase exponentially

D. is not affected by the load

131. Quiescent or Q-point position isdependent on

A. the supply voltage

B. the load resistance

C. the type of diode

D. all of the above

132. A germanium diode is connectedto a load resistance of 1.5 kΩ and

is supplied with 12-V such that thediode will be forward biased. Whatis the voltage across the diode?

A. approximately 12 V

B. approximately 0.7 V

C. approximately 0.3 V

D. lack of data and can’t be solved

133. What is the drop across thediode when it is connected in seriesto a resistor of 1.8 kΩ and a supplyvoltage of 50 V. The supply voltagecauses the diode to be reverse-biased.

A. 50 V

B. 0.7 V

C. 0.3 V

D. can not be solve, lack of data

134. Two germanium diodes areconnected in series and have a loadresistance of 10 kΩ and a forward

supply voltage of 5 V. Calculate thevoltage across the load resistor.



A. 4.7 V

B. 4.4 V

C. 0.6 V

D. 0.3 V

135. A silicon diode is in parallelwith a germanium diode and isconnected to a load resistor havinga value of 20 kΩ and a forward

supply voltage of 10 V. What is theapproximate voltage across thesilicon diode?

A. 10 V

B. 1.0 V

C. 0.7 V

D. 0.3 V

136. What is the output voltageacross a load resistor if it isparalleled with a forward biasedsilicon diode? The resistor networkis supplied with 10 V.

A. 0.7 V

B. 9.3 V

C. 10 V

D. Can’t be solve, lack of data.

137. Diode circuit that is used tocut a portion of the input signal

A. Clipper

B. Clamper

C. peak detector

D. level shifter

138. A clipper circuit wherein thediode is connected in series withthe load

A. series clipper

B. parallel clipper

C. shunt clipper

D. series feed clipper

139. What do you call a clippercircuit wherein the diode is shuntedwith the load?

A. series clipper

B. parallel clipper

C. cascade clipper

D. cascade clipper

140. A network with a diode and acapacitor that is used to shift thedc-level of the input signal

A. Clipper

B. Clamper

C. Shifter

D. Level inverter

141. Half-wave rectifier is a goodexample of

A. a series clamper

B. a parallel clamper

C. a parallel clipper

D. a series clipper

142. Which of the given circuit belowmust have a capacitor?

A. Rectifier

B. Clipper

C. ClamperD. all of the above

143. How many capacitors are used ina diode-capacitor half- wave voltagedoubler?

A. 1

B. 2

C. 3

D. 4

144. An improvement of a diode-capacitor half-wave voltage doubleris the full-wave doubler, thiscircuit uses how many capacitors?

A. 1

B. 2

C. 3

D. 4

145. In a diode-capacitor voltagequadrupler, what is the voltageacross the third stage capacitor?

A. Vmax B. 2 Vmax C.

3 Vmax D. 4 Vmax

146. A combination of several diodesin a single housing

A. diode arrayB. diode networkC. diode ICD. diode matrix

147. A chopper, employing analternately biased diodes as the

switching element. A. diode chopperB. active chopperC. junction chopperD. all are correct

148. A light emitting diode (LED) isto be used in a circuit with asupply voltage of 5 V. What shouldbe the value of the resistor neededby the LED to operate normally?

A. 25 Ω B. 250 Ω C.

25 kΩ D. 250 kΩ

149. A simple voltage-regulator whoseoutput is the constant voltage dropdeveloped across a zener diodeconducting in the reverse breakdownregion. The regulator circuitconsists of a zener diode inparallel with the load and anappropriate limiting resistor.

A. ordinary voltage regulatorB. zener voltage regulatorC. series voltage regulator

D. switching voltageregulator

150. Logic circuitry in which a diodeis the logic element and atransistor acts as an invertingamplifier.

A. RTLB. DTLC. HDTLD. ECL

151. What is a bridge rectifierhaving diodes in two arms andresistors in the other two?



A. full-wave bridge

B. half-wave bridge

C. half-bridge

D. full bridge

152. An over-voltage protectioncircuit employing a zener diode andan SCR whose function is to producehigh overload by-pass current on acircuit.

A. regulator

B. current enhancer

C. crowbar

D. shunted zener

solid state devices (diode)

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