solid state terahertz electron devices
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VGS
Source
Source Drain
Drain
Gate
Gate
Gate
RF
SiO2
Signal
Meander
Inductor
VS VD VGD
Interdigital
gates
Port 1
robedPort 2
open
SiO2Interdigital gates
(CrAu)
Channel
idth, W
Drain
Drain
W
A B
BA SiO2
Schematic cross-sectional
iew between A and B
Meander
InductorDC SiO2CrAu DC
Schematic cross-sectional
iew between C and D
-AlGaAs
GaAs
S.I.GaAs
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