some features of creating grid structure for simulation of nanotransistors
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Some features of creating GRID structure for simulation of nanotransistors. Bolormaa Dalanbayar , Batnyam Battulga. National Universiry of Mongolia School of Information Technology. Outline. About SIT Why parallel computation in SIT curricula? Nanoelectronics development - PowerPoint PPT PresentationTRANSCRIPT
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Мэдээллийн Технологийн
Сургууль
Монгол Улсын Их Сургууль
Some features of creating GRID structure for simulation of nanotransistors
Bolormaa Dalanbayar, Batnyam Battulga
National Universiry of MongoliaSchool of Information Technology
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Мэдээллийн Технологийн
СургуульOutline
i. About SIT
ii. Why parallel computation in SIT curricula?
iii. Nanoelectronics development
iv. Siesta and parallel processing in SIT
v. Conclusion
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Мэдээллийн Технологийн
СургуульIntroduction
Presented work – small GRID structure based Unicore software technology
DFT simulation of a bulk silicon using Siesta package
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Мэдээллийн Технологийн
СургуульSchool of Information Technology
1967 – First Radio-Electronic Engineers
1990 – Electronics Department
2002 – School of Information Technology
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Мэдээллийн Технологийн
СургуульSchool of Information Technology
Departments:
Electronics
Computer and Information Technology
Communication Technology
Research centers:
Research center of NLP
Research center of Mobile and Embedded technology
Animation studio
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Мэдээллийн Технологийн
СургуульWhy parallel computation in SIT curricula?
Nano electronics in Electronics curricula :
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Мэдээллийн Технологийн
СургуульWhy parallel computation in SIT curricula?
2010-2011
Matlab simulation (Landauer-Buttiker formalism, SC Iteration, NEGF,…)
2011-2012
First ab-initio simulation in Siesta (Linear-scaling DFT )
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Мэдээллийн Технологийн
СургуульNanoelectronics development Nanotransistor development:
- Experimental
- Computational
Nanotransistor modeling :
- physical process simulation (ab initio,…)
- characteristic simulation (NEGF approach,…)
- TCAD (Silvaco, Synopsis…)
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Мэдээллийн Технологийн
Сургууль
Simulation and Method Solving the 3D Poisson equation for the
electrostatic potential
Solving the 2D, 1D Schrodinger equations
Solving the coupled or uncoupled nonequilibrium Green function (NEGF) transport equations for the electron charge density.
Numerical simulation of ID
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Мэдээллийн Технологийн
СургуульSimulation and Method: Matlab
The computed log(ID) vs. VG transfer characteristics of a ballistic SNWFET with a SiO2 insulator layer (k = 3:9 and 25)
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Мэдээллийн Технологийн
СургуульSimulation and Method: Matlab
The computed ID vs. VD common source characteristics of ballistic SNWFET with a HfO2 insulator layer (k = 3:9 and 25)
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Мэдээллийн Технологийн
СургуульNanoelectronics development
Many electron problem:
Quantum Chemistry (Hartree-Fock, CI…)
Quantum Monte Carlo
Perturbation theory (propagators)
Density Functional Theory (DFT)
Very efficient and general
BUT implementations are approximate and hard to improve (no systematic improvement)
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Мэдээллийн Технологийн
СургуульSiesta and parallel processing in SIT Nano transistor (device physics) – atomistic models
Gabriele Penazzi, PhD dissertation Rome, June 2010.
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Мэдээллийн Технологийн
СургуульSiesta and parallel processing in SIT
Nano transistor (device physics) continuous models
Gabriele Penazzi, PhD dissertation Rome, June 2010.
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Мэдээллийн Технологийн
СургуульSiesta and parallel processing in SIT
Atomistic models:
- Siesta
- GROMACS
- VASP
- CASDEP
- ABINIT …
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Мэдээллийн Технологийн
СургуульSiesta and parallel processing in SIT
Siesta Methods:
- Born-Oppenheimer (relaxations, mol.dynamics)
- DFT (LDA, GGA)
- Pseudopotentials (norm conserving,factorised)
- Numerical atomic orbitals as basis (finite range)
- Numerical evaluation of matrix elements (3Dgrid)
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Мэдээллийн Технологийн
Сургууль
Siesta and parallel processing in SIT
Pseudopotential of Si:
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Мэдээллийн Технологийн
Сургууль
Siesta and parallel processing in SIT
Carrier charge:
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Мэдээллийн Технологийн
Сургууль
Siesta and parallel processing in SIT
Bulk Si
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Мэдээллийн Технологийн
Сургууль
Siesta and parallel processing in SIT
Used UNICORE 6
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Мэдээллийн Технологийн
СургуульConclusion
Double site configuration
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Мэдээллийн Технологийн
СургуульConclusion
Performed calculations in double site UNICORE GRID site:
- Matlab code of NEGF
- Feature selection Matlab code
- DFT Siesta code
- Band structure Siesta code
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Мэдээллийн Технологийн
Сургууль
Conclusion
Future plan:
- Development of cluster
- Testing of Torque
- Repeating our calculations
- Creation of education site map in UB
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Мэдээллийн Технологийн
Сургууль
Thank you for attention
A@Q?