sot-23 plastic-encapsulate mosfets sot-23 v1.1.pdf · sot-23 reel d2 5 rev. - 1.1 30,000 120,000....

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CJ3407 P-Channel Enhancement Mode Field Effect Transistor General Description The CJ3407 uses advanced trench technology to provide excellent R DS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Maximum ratings (T a =25unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D -4.1 A Power Dissipation P D 350 mW Thermal Resistance from Junction to Ambient R θJA 357 /W Junction Temperature T J 150 Storage Temperature T stg -55~+150 MARKING Equivalent Circuit V (BR)DSS R DS(on) MAX I D -30 V 60mΩ@-10V -4.1A 87mΩ@-4.5V SOT-23 1. GATE 2. SOURCE 3. DRAIN SOT-23 Plastic-Encapsulate MOSFETS JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD 1 www.jscj-elec.com Rev. - 1.1

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Page 1: SOT-23 Plastic-Encapsulate MOSFETS SOT-23 V1.1.pdf · SOT-23 Reel D2 5 Rev. - 1.1 30,000 120,000. Title: Microsoft Word - CJ3407_SOT-23_.doc Author: Administrator Created Date: 12/21/2010

CJ3407 P-Channel Enhancement Mode Field Effect Transistor

General Description The CJ3407 uses advanced trench technology to provide excellent

RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

Maximum ratings (Ta=25 unless otherwise noted)

Parameter Symbol Value Unit

Drain-Source Voltage VDS -30 V

Gate-Source Voltage VGS ±20 V

Continuous Drain Current ID -4.1 A

Power Dissipation PD 350 mW

Thermal Resistance from Junction to Ambient RθJA 357 /W

Junction Temperature TJ 150

Storage Temperature Tstg -55~+150

MARKING Equivalent Circuit

V(BR)DSS RDS(on)MAX ID

-30V60mΩ@-10V

-4.1A87mΩ@-4.5V

SOT-23

1. GATE

2. SOURCE

3. DRAIN

SOT-23 Plastic-Encapsulate MOSFETS JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate MOSFETS JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

1www.jscj-elec.com Rev. - 1.1

Administrator
矩形
Page 2: SOT-23 Plastic-Encapsulate MOSFETS SOT-23 V1.1.pdf · SOT-23 Reel D2 5 Rev. - 1.1 30,000 120,000. Title: Microsoft Word - CJ3407_SOT-23_.doc Author: Administrator Created Date: 12/21/2010

Parameter Symbol Test Condition Min Typ Max Units

Static characteristics

Drain-source breakdown voltage BVDSS VGS = 0V, ID =-250µA -30 V

Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA

Gate-source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA

VGS =-10V, ID =-4.1A 50 60 mΩDrain-source on-resistance (note 1) RDS(on)

VGS =-4.5V, ID =-3A 68 87 mΩ

Forward tranconductance (note 1) gFS VDS =-5V, ID =-4A 5.5 S

Gate threshold voltage VGS(th) VDS =VGS, ID =-250µA -1 -1.4 -3 V

Diode forward voltage (note 1) VSD IS=-1A,VGS=0V -1 V

Dynamic characteristics (note 2)

Input capacitance Ciss 700 pF

Output capacitance Coss 120 pF

Reverse transfer capacitance Crss

VDS =-15V,VGS =0V,f =1MHz

75 pF

Switching Characteristics (note 2)

Turn-on delay time td(on) 8.6 ns

Turn-on rise time tr 5.0 ns

Turn-off delay time td(off) 28.2 ns

Turn-off fall time tf

VGS=-10V,VDS=-15V,

RL=3.6Ω,RGEN=3Ω

13.5 ns

Notes: 1. Pulse test: Pulse width ≤300µs, duty cycle ≤2%.

2. These parameters have no way to verify.

MOSFET ELECTRICAL CHARACTERISTICS

aT =25 unless otherwise specified

2www.jscj-elec.com Rev. - 1.1

Page 3: SOT-23 Plastic-Encapsulate MOSFETS SOT-23 V1.1.pdf · SOT-23 Reel D2 5 Rev. - 1.1 30,000 120,000. Title: Microsoft Word - CJ3407_SOT-23_.doc Author: Administrator Created Date: 12/21/2010

-0.2 -0.4 -0.6 -0.8 -1.0 -1.2-1E-5

-1E-4

-1E-3

-0.01

-0.1

-1

-10

-0 -1 -2 -3 -4-0

-1

-2

-3

-4

-5

-0 -2 -4 -6 -8 -1020

40

60

80

100

-2 -4 -6 -8 -1030

60

90

120

150

180

-0 -1 -2 -3 -4 -5-0

-5

-10

-15

-20

Ta=25Pulsed

Ta=25Pulsed

IS —— VSD

Ta=25Pulsed

SO

UR

CE

CU

RR

EN

T

I S

(A)

SOURCE TO DRAIN VOLTAGE VSD (V)

Ta=25Pulsed

Ta=25Pulsed

Transfer Characteristics

DR

AIN

CU

RR

EN

T

I D

(A)

GATE TO SOURCE VOLTAGE VGS (V)

VGS=-4.5V

VGS=-10V

ID——RDS(ON)

ON

-RES

ISTA

NC

E

RD

S(O

N)

(mΩ

)

DRAIN CURRENT ID (A)

VGS——RDS(ON)

ID=-4.1A

ON

-RES

ISTA

NC

E

RD

S(O

N)

(mΩ

)

GATE TO SOURCE VOLTAGE VGS (V)

VGS =-10、-5.0、-4.5、-4.0V

VGS=-3.5V

VGS=-3.0V

Output Characteristics

DR

AIN

CU

RR

EN

T

I D

(A)

DRAIN TO SOURCE VOLTAGE VDS (V)

Typical Characteristics

3www.jscj-elec.com Rev. - 1.1

Page 4: SOT-23 Plastic-Encapsulate MOSFETS SOT-23 V1.1.pdf · SOT-23 Reel D2 5 Rev. - 1.1 30,000 120,000. Title: Microsoft Word - CJ3407_SOT-23_.doc Author: Administrator Created Date: 12/21/2010

Min Max Min MaxA 0.900 1.150 0.035 0.045

A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100ee1 1.800 2.000 0.071 0.079LL1 0.300 0.500 0.012 0.020θ 0° 8° 0° 8°

0.550 REF 0.022 REF

Symbol Dimensions In InchesDimensions In Millimeters

0.950 TYP 0.037 TYP

SOT-23 Package Outline Dimensions

SOT-23 Suggested Pad Layout

4www.jscj-elec.com Rev. - 1.1

NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.

Page 5: SOT-23 Plastic-Encapsulate MOSFETS SOT-23 V1.1.pdf · SOT-23 Reel D2 5 Rev. - 1.1 30,000 120,000. Title: Microsoft Word - CJ3407_SOT-23_.doc Author: Administrator Created Date: 12/21/2010

SOT-23 Tape and Reel

1000

500

2000

1500

2500

3000

G

H

W1

W2

D1

I

DSOT-23 Reel

D2

5www.jscj-elec.com Rev. - 1.1

30,000 120,000