spc 6601

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    2006/03/20Ver.2 Page 1

    SPC6601N & P Pair Enhancement Mode MOSFET

    DESCRIPTION APPLICATIONS

    The SPC6601 is the N- and P-Channel enhancement

    mode power field effect transistors are produced using

    high cell density , DMOS trench technology. This high

    density process is especially tailored to minimize on-state

    resistance and provide superior switching performance.

    These devices are particularly suited for low voltage

    applications such as notebook computer power

    management and other battery powered circuits where

    high-side switching , low in-line power loss, and

    resistance to transients are needed.

    z Power Management in Note book

    z Portable Equipmentz Battery Powered Systemz DC/DC Converterz Load Switchz DSCz LCD Display inverter

    FEATURES PIN CONFIGURATION( TSOP 6P )

    PART MARKING

    N-Channel

    30V/2.8A,RDS(ON)= 68m@VGS=10V

    30V/2.3A,RDS(ON)= 78m@VGS=4.5V

    30V/1.5A,RDS(ON)= 108m@VGS=2.5V

    P-Channel

    -30V/-2.8A,RDS(ON)=105m@VGS=- 10V

    -30V/-2.5A,RDS(ON)=120m@VGS=-4.5V

    -30V/-1.5A,RDS(ON)=150m@VGS=-2.5V

    Super high density cell design for extremely lowRDS (ON)

    Exceptional on-resistance and maximum DC

    current capability

    TSOP 6P package design

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    SPC6601N & P Pair Enhancement Mode MOSFET

    PIN DESCRIPTION

    Pin Symbol Description

    1 G1 Gate 1

    2 S2 Source 2

    3 G2 Gate 2

    4 D2 Drain 2

    5 S1 Source 1

    6 D1 Drain1

    ORDERING INFORMATION

    Part Number Package Part Marking

    SPC6601ST6RG TSOP- 6P 01YW

    Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )

    SPC6601ST6RG : Tape Reel ; Pb Free

    ABSOULTE MAXIMUM RATINGS

    (TA=25 Unless otherwise noted)

    TypicalParameter Symbol

    N-Channel P-ChannelUnit

    Drain-Source Voltage VDSS 30 -30 V

    Gate Source Voltage VGSS 12 12 V

    TA=25 2.8 -2.8

    Continuous Drain Current(TJ

    =150 )

    TA=70 ID

    2.3 -2.1 A

    Pulsed Drain Current IDM 10 -8 A

    Continuous Source Current(Diode Conduction) IS 1.25 -1.4 A

    TA=25 1.15Power Dissipation

    TA=70PD

    0.75W

    Operating Junction Temperature TJ -55/150

    Storage Temperature Range TSTG -55/150 T 10sec 50 52

    Thermal Resistance-Junction to AmbientSteady State

    RJA90 90

    /W

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    SPC6601N & P Pair Enhancement Mode MOSFET

    ELECTRICAL CHARACTERISTICS

    (TA=25 Unless otherwise noted)

    Parameter Symbol Conditions Min. Typ Max. Unit

    Static

    VGS=0V,ID= 250uA N-Ch 30Drain-Source Breakdown

    VoltageV(BR)DSS

    VGS=0V,ID=-250uA P-Ch -30

    VDS=VGS,ID=250uA N-Ch 0.8 1.6Gate Threshold Voltage VGS(th)

    VDS=VGS,ID=-250uA P-Ch -0.4 -1.0

    V

    VDS=0V,VGS=12V N-Ch 100Gate Leakage Current IGSS

    VDS=0V,VGS=12V P-Ch 100nA

    VDS= 24V,VGS=0V N-Ch 1VDS=-24V,VGS=0V P-Ch -1

    VDS= 24V,VGS=0V TJ=55 N-Ch 10

    Zero Gate Voltage Drain

    CurrentIDSS

    VDS=-24V,VGS=0V TJ=55 P-Ch -10

    uA

    VDS 5V,VGS = 10V N-Ch 6On-State Drain Current ID(on)

    VDS -5V,VGS =-10V P-Ch -6A

    VGS= 10V,ID= 2.8A N-Ch 0.048 0.068

    VGS=-10V,ID=-2.8A P-Ch 0.077 0.105

    VGS= 4.5V,ID= 2.3A N-Ch 0.054 0.078

    VGS=-4.5V,ID=-2.5A P-Ch 0.092 0.120

    VGS= 2.5V,ID= 1.5A N-Ch 0.079 0.108

    Drain-Source On-Resistance RDS(on)

    VGS=-2.5V,ID=-1.5A P-Ch 0.118 0.150

    VDS=4.5V,ID=2.8A N-Ch 4.6Forward Transconductance gfs

    VDS=-10V,ID=-2.8A P-Ch 4S

    IS= 1.25A,VGS =0V N-Ch 0.8 1.2Diode Forward Voltage VSD

    IS=-1.2A,VGS =0V P-Ch -0.8 -1.2V

    Dynamic

    N-Ch 4.2 6Total Gate Charge Qg

    P-Ch 5.8

    N-Ch 0.6Gate-Source Charge Qgs

    P-Ch 0.8

    N-Ch 1.5

    Gate-Drain Charge Qgd

    N-Channel

    VDS=15 ,VGS=4.5V , ID2.0A

    P-Channel

    VDS=-15V ,VGS=-4.5V , ID-2.0A

    P-Ch 1.5

    nC

    N-Ch 2.5td(on)

    P-Ch 6

    N-Ch 2.5Turn-On Time

    trP-Ch 3.9

    N-Ch 20td(off)

    P-Ch 40

    N-Ch 4Turn-Off Time

    tf

    N-Channel

    VDD=15 , RL=10

    VGEN=10V , RG=3

    P-Channel

    VDD=-15V , RL=15

    VGEN=-10V , RG=3P-Ch 15

    nS

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    TYPICAL CHARACTERISTICS ( N-Channel )

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    TYPICAL CHARACTERISTICS ( N-Channel )

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    SPC6601N & P Pair Enhancement Mode MOSFET

    TYPICAL CHARACTERISTICS ( P-Channel )

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    TYPICAL CHARACTERISTICS ( P-Channel )

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    TYPICAL CHARACTERISTICS ( P-Channel )

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    SPC6601N & P Pair Enhancement Mode MOSFET

    TSOP- 6P PACKAGE OUTLINE

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    SPC6601N & P Pair Enhancement Mode MOSFET

    Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the

    penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditionsmentioned in this publication are subject to change without notice. This publication surpasses and replaces all informationpreviously supplied. SYNC Power Corporation products are not authorized for use as critical components in life supportdevices or systems without express written approval of SYNC Power Corporation.

    The SYNC Power logo is a registered trademark of SYNC Power Corporation2004 SYNC Power Corporation Printed in Taiwan All Rights Reserved

    SYNC Power Corporation9F-5, No.3-2, Park Street

    NanKang District (NKSP), Taipei, Taiwan 115Phone: 886-2-2655-8178

    Fax: 886-2-2655-8468

    http://www.syncpower.com