spice model of 2sc5949 in spice park
TRANSCRIPT
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC5949
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
TRANSISTOR MODEL
PSpice model
parameter Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse Early Voltage Characteristic
Reverse
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Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
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Ic
VceVAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward Early Voltage Characteristic
Forward
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C-B Capacitance Characteristics E-B Capacitance Characteristics
Measurement
Simulation
Measurement
Simulation
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I1
0Adc
v sence
0Vdc
0
Q1
Q2SC5949V1
5Vdc
I(vsence)
100mA 1.0A 10A30mA 30A
I(vsence)/ IB(Q1)
10
100
500
Transistor hFE-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
10
100
1000
0.100 1.000 10.000 100.000
IC (A)
hF
E
Measurement
Simulation
Comparison Graph
Ic(A) hFE
Error(%) Measurement Simulation
0.030 90.000 86.965 -3.372
0.050 90.000 90.199 0.221
0.100 91.000 93.961 3.254
0.200 95.000 97.110 2.221
0.500 100.000 99.649 -0.351
1.000 100.000 100.090 0.090
2.000 99.000 96.171 -2.858
5.000 82.000 81.979 -0.026
10.000 57.000 59.103 3.689
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VC
0
I1
0Adc
F1
F10
Q1
Q2SC5949
IC(Q1)
100mA 1.0A 10A30mA 30A
V(Q1:c)
10mV
100mV
1.0V
2.0V
VCE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.01
0.1
1
0.01 0.10 1.00 10.00 100.00
IC (A)
VC
E(S
AT
) (V
)
Measurement
Simulation
Comparison Graph
IC(A) VCE(sat)(V)
Error(%) Measurement Simulation
0.100 0.023 0.023 0.000
0.200 0.027 0.026 -3.704
0.500 0.037 0.038 2.703
1.000 0.052 0.054 3.846
2.000 0.080 0.081 1.250
5.000 0.150 0.147 -2.000
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VC
F1
F10
0
I1
0Adc
Q1
Q2SC5949
IC(Q1)
100mA 1.0A
V(Q1:b)
100mV
1.0V
10V
VBE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.1
1
10
0.10 1.00
IC (A)
VB
E(S
AT
) (V
)
Measurement
Simulation
Comparison Graph
IC(mA) VBE(sat)(V)
Error(%) Measurement Simulation
0.100 0.642 0.645 0.467
0.200 0.670 0.676 0.896
0.500 0.720 0.725 0.694
Circuit Simulation Result
Simulation Result
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Time
0.992ms 1.000ms 1.008ms 1.016ms 1.024ms
1 IC(Q1) 2 IB(Q1)
-4.0A
-3.0A
-2.0A
-1.0A
0A
1.0A
2.0A
3.0A
4.0A1
-200mA
-150mA
-100mA
-50mA
-0mA
50mA
100mA
150mA
200mA2
>>
Switching Characteristics Circuit simulation result
Evaluation circuit
Simulation result
Measurement Simulation %Error
tstg (ns) 400.000 409.201 2.300
tf (us) 9.800 9.797 -0.031
V2
36
L2
50nH
V1
TD = 3us
TF = 1nsPW = 1msPER = 2ms
V1 = -5
TR = 1ns
V2 = 6
R3
18
L1
50nH
R2
110
0
R1
104Q1
Q2SC5949
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Switching Characteristics Reference
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I1
0Adc
Q1
Q2SC5949
0
V110Vdc
V_V1
0V 2V 4V 6V 8V 10V 12V
IC(Q1)
0A
4A
8A
12A
16A
20A
Output Characteristics
Circuit Simulation Result
Evaluation Circuit
500 400 300 200 100 50
IB=20mA
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Output Characteristics Reference