All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Standard)

PART NUMBER: 2SK3677-01MR

MANUFACTURER: Fuji Electric Co., Ltd.

REMARK: Body Diode (Standard)

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

POWER MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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Body Diode Model

Pspice model parameter

Model description

IS Saturation Current

N Emission Coefficient

RS Series Resistance

IKF High-injection Knee Current

CJO Zero-bias Junction Capacitance

M Junction Grading Coefficient

VJ Junction Potential

ISR Recombination Current Saturation Value

BV Reverse Breakdown Voltage(a positive value)

IBV Reverse Breakdown Current(a positive value)

TT Transit Time

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Transconductance Characteristic Circuit Simulation Result

Comparison table

ID(A) VGS(V)

Error (%) Measurement Simulation

0.200 1.750 1.760 0.571

0.500 2.750 2.840 3.273

1.000 3.950 3.968 0.456

2.000 5.500 5.525 0.455

5.000 8.400 8.460 0.714

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V_V1

0V 2V 4V 6V 8V 10V

I(V3)

100mA

1.0A

10A

50mA

V2

0Vdc

V3

25Vdc

0

V1

10Vdc

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

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Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

0.200 4.820 4.864 0.921

0.500 5.010 4.995 -0.295

1.000 5.190 5.141 -0.950

2.000 5.390 5.353 -0.690

5.000 5.760 5.776 0.274

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V_V2

0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V

I(V3)

0A

1A

2A

3A

4A

5A

6A

7A

8A

9A

10A

V2

0Vdc

V3

25Vdc

0

V1

10Vdc

Id-Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=6, VGS=10V Measurement Simulation Error (%)

RDS (on) 720.00 m 720.00 m 0.00

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Time*10ms

0 10n 20n 30n 40n

V(W1:2)

0V

2V

4V

6V

8V

10V

12V

V1350Vdc

-

+W1

ION = 0uAIOFF = 10mAW

D1

Dbreak

I2

12Adc

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 10m

TR = 10n

0

U102SK3677-01MRS

V2

0Vdc

Gate Charge Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

VDD=350V ,ID=12A

Measurement Simulation Error (%)

Qgs 4.50 nC 4.52 nC 0.44

Qgd 11.00 nC 10.80 nC -1.82

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Capacitance Characteristic (Vds vs. Cbd)

Simulation Result

VDS(V)

Cbd(nF)

Error(%) Measurement Simulation

1.000 1.500 1.495 -0.333

2.000 1.100 1.112 1.091

5.000 0.660 0.647 -1.970

10.000 0.400 0.392 -2.000

20.000 0.210 0.225 7.143

50.000 0.100 0.104 4.000

Simulation

Measurement

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Time

4.95us 5.00us 5.05us 5.10us 5.15us 5.20us 5.25us 5.32us

V(2) V(3)/30

0V

4V

8V

12V

0

L2

30nH

L1

50nH

VDD

300

0

V1

TD = 5u

TF = 7nPW = 10uPER = 1000u

V1 = 0

TR = 6n

V2 = 10

RL

49.5

V3

0Vdc

0

R1

10

Switching Time Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=6A, VDD=300V VGS=0/10V

Measurement Simulation Error(%)

td (on) 24.5 ns 24.5 ns 0.0

VGS

ID

VGS = 10V

VDS =300 (V)

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V_V2

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(V3)

0A

1A

2A

3A

4A

5A

6A

7A

8A

9A

10A

Output Characteristic

Circuit Simulation result

Evaluation circuit

VGS=5.0V

V1

10.0Vdc

0

V2

0Vdc

V3

25Vdc

6.5V

6.0V

5.5V

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Output Characteristic Reference

VGS=5.0V

6.5V

6.0V

5.5V

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V_V3

400mV 800mV 1100mV

I(V2)

100mA

1.0A

10A

V3

0Vdc

V2

0Vdc

R1

0.01m

0

Forward Current Characteristic of Reverse Diode

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Comparison Graph Circuit Simulation Result

Simulation Result

Ifwd(A) Vfwd(V)

Measurement Vfwd(V)

Simulation %Error

0.100 0.616 0.619 0.487

0.200 0.648 0.647 -0.154

0.500 0.688 0.686 -0.291

1.000 0.717 0.717 -0.070

2.000 0.747 0.748 0.067

5.000 0.792 0.791 -0.189

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Time

10us 12us 14us 16us 18us 20us 22us 24us 26us

I(R1)

-400mA

0A

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj 2.40 us 2.39 ns -0.42

0

0

U92SK3644-01S

R1

50

V1

TD = 100n

TF = 10nPW = 5uPER = 50u

V1 = {-9.4}

TR = 10n

V2 = {10.7}

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Reverse Recovery Characteristic Reference

Trj=2.4(us) Trb=2.96(us) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example