spice model of mp4212 (professional+bdp n&p model) in spice park
DESCRIPTION
SPICE MODEL of MP4212 (Professional+BDP N&P Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.TRANSCRIPT
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional) PART NUMBER: MP4212 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode REMARK: N&P Channel Model
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
MOSFET MODEL
Pspice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
P-Channel Model
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A) gfs
Error(%) Measurement Simulation
-0.500 1.800 1.810 0.556
-1.000 2.500 2.505 0.200
-2.000 3.500 3.500 0.000
-5.000 5.500 5.505 0.091
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Open
R1
100MEG
V20Vdc
V1
-10Vdc
Open
U17
MP4212
0
V3
0Vdc
0
V_V2
0V -2V -4V -6V -8V -10V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
-1.000 -2.500 -2.511 0.440
-2.000 -2.850 -2.844 -0.211
-4.000 -3.300 -3.324 0.727
-6.000 -3.700 -3.695 -0.135
-8.000 -4.000 -4.004 0.100
-10.000 -4.300 -4.291 -0.209
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VDS0Vdc
R1
100MEG
Open
0
0
V3
0Vdc
U17
MP4212
VGS
-10Vdc
Open
V_VDS
0V -50mV -150mV -250mV -350mV -450mV
I(V3)
0A
-0.5A
-1.0A
-1.5A
-2.0A
-2.5A
-3.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-2.5A, VGS=-10V Measurement Simulation Error (%)
RDS (on) 400.000 m 400.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V2
0Vdc
I2-5Adc
-
+
W1
ION = 0uAIOFF = 100uA
W
D1
Dbreak
U17
MP4212
0
R1
100MEG
0
Open
I1
TD = 0
TF = 10nPW = 600uPER = 1000u
I1 = 0
I2 = 1m
TR = 10n
V1-48Vdc
open
0
Time*1mS
0 8n 16n 24n 32n 40n
V(W1:4)
0V
-5V
-10V
-15V
-20V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=-48V,ID=-5A ,VGS=-10V
Measurement Simulation Error (%)
Qgs 3.500 nC 3.500 nC 0.000
Qgd 10.000 nC 10.046 nC 0.460
Qg 22.000 nC 22.000 nC 0.000
VDD=-48V
-24V
-12V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Capacitance Characteristic
Simulation Result
VDS(V) Cbd(pF)
Error(%) Measurement Simulation
0.100 475.000 471.000 -0.842
0.200 465.000 462.000 -0.645
0.500 440.000 438.000 -0.455
1.000 400.000 403.000 0.750
2.000 350.000 351.000 0.286
5.000 255.000 260.000 1.961
10.000 188.000 190.000 1.064
20.000 134.000 135.000 0.746
50.000 75.000 75.000 0.000
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V2TD = 2u
TF = 4nPW = 10uPER = 2000u
V1 = 0
TR = 3n
V2 = -20
RG
4.7
R9
100MEG
R2
12
Open
0
U17
MP4212
V1-30Vdc
L2
50nH
L1
30nH
0
0
open
R1
4.7
Time
1.950us 2.000us 2.050us 2.100us 2.150us1.912us
V(R1:1) V(L2:2)/3
0V
-5V
-10V
-15V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-2.5A, VDD=-30V VGS=0/10V
Measurement Simulation Error(%)
ton 45.000 ns 44.955 ns -0.100
VGS
ID
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Open
Open
0
Vv ariable
-10Vdc
0
R1
100MEG
Vstep
-10Vdc
U17
MP4212
Vdsense
0Vdc
V_Vvariable
0V -2V -4V -6V -8V -10V
I(Vdsense)
0A
-2A
-4A
-6A
-8A
-10A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=-2.0V
-2.5V
-3.0V
-6V
-3.5V
-4.0V -8.0V
-10.0V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Open
R1
0.01m
Open
0
0
U17
MP4212
V1
0Vdc
Ropen
100MEG
V_V1
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
100mA
1.0A
10A
30A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result
Simulation Result
IDR(A) VDS(V)
Measurement VDS(V)
Simulation %Error
0.100 0.630 0.632 0.317
0.200 0.670 0.668 -0.299
0.500 0.720 0.720 0.000
1.000 0.770 0.769 -0.130
2.000 0.830 0.834 0.482
5.000 0.980 0.997 1.735
10.000 1.180 1.177 -0.254
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U13
D4212P
V1
TD = 20.468n
TF = 10nsPW = 1usPER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
0
R1
50
Time
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us 1.6us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 50.000 ns 49.878 ns -0.244
trb 76.000 ns 76.557 ns 0.733
trr 126.000 ns 126.435 ns 0.345
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic Reference
Trj=50(ns) Trb=76(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Ropen
100MEG
R1
0.01m
Open
V1
0Vdc
open
0
0
U17
MP4212
V_V1
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
0A
-1mA
-2mA
-3mA
-4mA
-5mA
-6mA
-7mA
-8mA
-9mA
-10mA
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
N-Channel Model
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A) gfs
Error(%) Measurement Simulation
0.500 2.100 2.150 2.381
1.000 3.000 3.010 0.333
2.000 3.800 3.800 0.000
5.000 6.100 6.150 0.820
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U19
MP4212
0
R1
100MEG
V3
0VdcV1
10Vdc
Open
V20Vdc
Open
0
V_V2
0V 2V 4V 6V 8V 10V
I(V3)
0A
2A
4A
6A
8A
10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
1.000 2.700 2.701 0.037
2.000 3.000 3.011 0.367
4.000 3.500 3.446 -1.543
6.000 3.800 3.790 -0.263
8.000 4.000 4.081 2.025
10.000 4.400 4.339 -1.386
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VDS0Vdc
VGS
10Vdc
Open
V3
0Vdc
Open
R1
100MEG
0
U19
MP4212
0
V_VDS
0V 200mV 400mV 500mV
I(V3)
0A
1.0A
2.0A
3.0A
3.5A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=2.5A, VGS=10V Measurement Simulation Error (%)
RDS (on) 300.000 m 300.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
I25Adc
V148Vdc
-
+W1
ION = 0uAIOFF = 100uAW
0
V2
0Vdcopen
0
U19
MP4212
Open
I1
TD = 0
TF = 10nPW = 600uPER = 1000u
I1 = 0
I2 = 1m
TR = 10n Ropen
100MEG
D1
Dbreak
0
Time*1mS
0 20n 40n 60n 80n
V(W1:3)
0V
5V
10V
15V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=48V,ID=5A ,VGS=10V
Measurement Simulation Error (%)
Qgs 7.000 nC 7.026 nC 0.371
Qgd 16.000 nC 15.946 nC -0.338
Qg 45.000 nC 44.865 nC -0.300
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Capacitance Characteristic
Simulation Result
VDS(V) Cbd(pF)
Error(%) Measurement Simulation
0.100 360.000 362.000 0.556
0.200 340.000 337.000 -0.882
0.500 285.000 288.000 1.053
1.000 240.000 243.000 1.250
2.000 200.000 198.000 -1.000
5.000 140.000 142.000 1.429
10.000 110.000 110.000 0.000
20.000 80.000 83.000 3.750
50.000 60.000 61.000 1.667
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Open
L1
30nH
V2TD = 2u
TF = 4nPW = 10uPER = 2000u
V1 = 0
TR = 3n
V2 = 10
L2
50nH
Ropen
100MEG
U19
MP4212
R1
50
0
open
0
R2
12
V130Vdc
0
Time
1.95us 2.00us 2.05us 2.10us 2.15us 2.20us
V(L1:2) V(L2:2)/3
0V
10V
20V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=2.5 A, VDD=30V VGS=0/10V
Measurement Simulation Error(%)
ton 25.000 ns 24.966 ns -0.136
VGS
ID
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Vdsense
0VdcR1
100MEG
U19
MP4212
0
Vstep
10Vdc
Open
Open
0
Vv ariable
10Vdc
V_Vvariable
0V 4V 8V 12V 16V 20V
I(Vdsense)
0A
4A
8A
12A
16A
20A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=2.5V
4.0V
3.0V
3.5V
8.0V
10.0V
6.0V
4.5V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U19
MP4212
Ropen
100MEG
V1
0Vdc
0
R1
0.01m
Open
0
open
V_V1
0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V
I(R1)
100mA
1.0A
10A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result
Simulation Result
IDR(A) VSD(V)
Measurement VSD(V)
Simulation %Error
0.100 0.650 0.647 -0.462
0.200 0.680 0.682 0.294
0.500 0.730 0.736 0.822
1.000 0.800 0.789 -1.375
2.000 0.860 0.864 0.465
5.000 1.040 1.041 0.096
10.000 1.300 1.299 -0.077
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0
V1
TD = 0
TF = 10nsPW = 1usPER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
R1
50
U11
D4212N
Time
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 22.400 ns 22.530 ns 0.580
trb 40.000 ns 40.183 ns 0.458
trr 62.400 ns 62.713 ns 0.502
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic Reference
Trj=22.0(ns) Trb=40.0(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0
V1
0Vdc
open
Ropen
100MEG
Open
R1
0.01m
0
U19
MP4212
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic Reference