sputter deposition pvd 2017 - allwin21 · surface of substrate (lpcvd, apcvd,pecvd,mocvd) ③....

Sputter Deposition PVD

2017

220 Cochrane Circle Morgan Hill, CA95037

U.S.A. Tel.:+1-408-778-7788

Fax.:+1-408-904-7168 www.allwin21.com

[email protected]

1 © 2015 Allwin21 Corp. All Rights Reserved. All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

http://www.allwin21.com/

mailto:[email protected]

Thin Film

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Thin Film

1. Film A Formation by Deposition without Cause Changes to B

① Physical Vapor Deposition (PVD) -Film is formed by atoms directly transported

from source to the substrate through gas phase

② Chemical Vapor Deposition (CVD) -Film is formed by chemical reaction on the

surface of substrate (LPCVD, APCVD,PECVD,MOCVD)

③ Epitaxy – Using CVD process to form a single crystal film

2. Film Growth by interaction of A and B

① Thermal Oxidation

② Thermal Nitridation

③ Formation of A (Silicides) by Direct Reaction of a Metal and B

3. Spin Coating: Coater for Photoresist

4. Plating

B

A

Comparison of Main Thin Film Technologies

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PVD

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PVD Categories

1. Evaporation

Thermal evaporation

E-beam evaporation

2. Sputtering

Glow-Discharge Sputter

Ion Beams Sputter


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•Sputtering is a term used

to describe the mechanism

in which atoms are ejected

from the surface of a

material when that surface

is stuck by sufficiency

energetic particles.

•Alternative to evaporation.

•First discovered in 1852,

and developed as a thin film

deposition technique by

Langmuir in 1920.


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Glow-Discharge Sputter Categories I. Power Supply

① RF

② DC

③ Pulse DC

II. Cathode Shape

① Circle

② Delta

③ Rectangle

④ Others

III. Cathode Type

① Diode

② Magnetron

IV. Load/Unload Type

① Manual (/w LL)

② Manual (/wo LL)

③ Automatic (V)

④ Automatic (H)

V. Throughput and Applications

① High volume

② Middle volume

③ Low volume

④ Research

⑤ Concept

⑥ Others

① Co-sputter

② Reactive Sputter

③ Plasma etch/clean

④ Loadlock Degas

⑤ Reactor Heating

⑥ Bias Function

Glow-Discharge Sputter(Con.)

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RF Etching: Essentially the reverse process of RF diode sputter deposition, in which the substrate table becomes the cathode (negative pole) and the target assembly becomes the anode (positive pole). Under these circumstances, surface material from the substrates is ejected. Surface impurities are ejected along with substrates material, making this process useful for pre-cleaning substrate prior to sputter deposition. In order to prevent ejected material from contaminating the target, s shutter is positioned between target and substrate. Bias sputtering: Combines the DC or RF sputtering and the RF etching operations. While DC or RF power is applied to the target, a small amount of RF is also applied to the substrate table. As a result, the substrate and target are both bombarded by ions ( the substrate to a lesser extent than the target ). In many applications this process yields superior quality films than can be attained using DC or RF sputtering with grounded substrates. Bias sputtering influences the crystal structure, and tends to re-sputter trapped argon from the growing film during deposition and rearrange individual atoms of the sputtered material; this improves stoichiometry and step coverage. Bias sputtering can be used to adjust film resistivity and film stress to desired levels.

Glow-Discharge Sputter(Con.)

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Reactive Sputtering Some metals, such as nitrides and oxides, are best deposited by this method: the target is the parent metal and a small amount of nitrogen or oxygen is introduced into the process chamber along with the argon sputtering gas. Because ionized gases are typically highly reactive, a film deposited in a mixture of argon and a reactive gas will often form a compound with the reactive gas (e.g., a nitride or an oxide). Co-Deposition Sometimes called co-sputtering or dual deposition, co-deposition is identical in principle and practice to other types of sputter deposition, except that two targets (typically of different materials) are simultaneously activated. Substrates passing sequentially and repeatedly beneath the targets are coated with alternating, very thin films of two materials. Under certain circumstances, the resultant film can be equivalent to or better than one formed using a composite target. During co-deposition, both targets may be RF, both DC, or one RF and one DC.

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Allwin21 Sputter Equipment Models and Features

Models Condition Wafer Size Sputter Materials

AccuSputter AW 4450 New Up to 8” * Metal or Dielectric

Perkin-Elmer 4400 Fully Refurbished&Upgraded Up to 8” Metal or Dielectric

Perkin-Elmer 4410 Fully Refurbished&Upgraded Up to 8” * Metal or Dielectric

Perkin-Elmer 4450 Fully Refurbished&Upgraded Up to 8” * Metal or Dielectric

Models Load Lock Load/Unload RF Power DC Power Pulse DC

AccuSputter AW 4450 Yes Manual 2KW or 3KW 5KW or 10KW Optional

Perkin-Elmer 4400 Yes Manual 2KW 5KW Optional



* Up to 12 inch is optional at extra cost.

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Allwin21 Sputter Equipment Models and Features(Con.)

Models Cathode Shape Cathode Size* Cathode Type

AccuSputter AW 4450 Circle or Delta 8” or Delta Diode or Magnetron**

Perkin-Elmer 4400 Circle 8” Diode or Magnetron**

Perkin-Elmer 4410 Delta Delta Diode or Magnetron**

Perkin-Elmer 4450 Delta Delta Diode or Magnetron**

*:Customized cathode sizes are optional. ** Magnetron is popular for high rate.

Models Degas(200C) Reactor Heating (300C) Bias Function Turbo

AccuSputter AW 4450 Optional Optional Optional Optional

Perkin-Elmer 4400 Optional Optional Optional Optional



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Allwin21 Sputter Equipment Models and Features(Con.)

Models Throughput Co-sputter Reactive Sputter Etch/Clean

AccuSputter AW 4450 Low to Middle volume Optional Optional Optional

Perkin-Elmer 4400 Low to Middle volume Optional Optional Optional



Models Load Lock Load/Unload RF Power DC Power Pulse DC

AccuSputter AW 4450 Yes Manual 1-3KW 1-10KW Optional

Perkin-Elmer 4400 Yes Manual 1-2KW 1-5KW Optional



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Allwin21 Sputter Equipment Structure

http://www.allwin21.com/Item.asp?catid=34&id=373

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Allwin21 Sputter Equipment Structure(Con.)


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Allwin21 Sputter Equipment Cathode Types

8 inch Circle Delta

*6 inch Circle in Delta is optional. Smaller than 8 inch is optional at extra cost.

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Allwin21 Sputter Equipment Structure(Con.) * Loadlock, Elevators,Pallet,Chamber,Sputter Head,Hoist


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Allwin21 Sputter Equipment Structure(Con.) * Loadlock, Elevator,Pallet,Process Chamber,Sputter Head, Cryo Pump

Turbo


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Allwin21 Sputter Equipment Controller * Main Screen

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Allwin21 Sputter Equipment Controller * WTM Screen

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Allwin21 Sputter Equipment Facility and Dimensions Utilities:

•Rear-mounted electrical, water, gas and LN2 inlet panel •Power distribution box •Water flow switch panel and manifold •10kW DC power supply: 208VAC, 60Hz, 3phases, 60A, 4 wires •Vacuum system: 208VAC, 60Hz, 3phases, 60A, 5 wires •Cooling Water: 1.8gpm3 •Process N2: 60-70 psi •Process Argon: 5-10 psi •CDA: 40-60 psi

Dimensions and Weight:

Width: 65.000 in (165.1 cm)

Depth: 46.000 in (116.8 cm)

Height: 68.000 in (172.7 cm)

Weight: 2,288 lb (1,038 kg)

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Allwin21 Sputter Equipment Facility and Dimensions Utilities:

•Rear-mounted electrical, water, gas and LN2 inlet panel •Power distribution box •Water flow switch panel and manifold •10kW DC power supply: 208VAC, 60Hz, 3phases, 60A, 4 wires •Vacuum system: 208VAC, 60Hz, 3phases, 60A, 5 wires •Cooling Water: 1.8gpm3 •Process N2: 60-70 psi •Process Argon: 5-10 psi •CDA: 40-60 psi

Dimensions and Weight:

Width: 65.000 in (165.1 cm)

Depth: 46.000 in (116.8 cm)

Height: 68.000 in (172.7 cm)

Weight: 2,288 lb (1,038 kg)

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Allwin21 Sputter Equipment Proven Deposition Materials Al+W Cr/SiO2 SiC Ti+Au Al+Ti/W+Ag InSnO SiO2 Ti+Au+Ni Al2O3 Mo SiO2+O2 Ti/W Ag MoSi2 Si+N2(Si3N4) Ti/W+Au Au Mo2Si5 Si+N2+B4C Ti/W+Au+Ta C Mo5Si3 Ta Ti/W+Al/Si Cr Ni TaC Ti/W+Ni/Cr+Au

Cr/Co Ni/Cr Ta+Au Ti/W+Pt Cr/Au Ni+Ni/Cr TaSi2 W Cr+Cu Ni/Fe Ta+SiO2 Cr/Si Ni/Fe+Cu+SiO2 TiO2 Zn Cr/SiO Pt TiO2+Cr ZnO2

Zr

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Allwin21 Sputter Equipment Proven Deposition Rates Material Delta(1)

RF Diode Delta(1)

RF Magnetron Delta

DC Magnetron Ag 480 Al 200 Al2O3

(3) 40 Au 400 Cr 180 CrNx 160 CrSi2 125 Cu 80 320 Mo 220 MoSi2 150 Ni(2) Nichrome 125 Pd 390 Permalloy(2) Pt 280 Quartz(3) 25 50 Si(3) 90 Si3N4

(3) 30 Ta 150 TaNx 140 Ti 140 TiNx 125 Ti/W(10%) 150 W 150 Wnx 125

Angstroms/m

in/kw

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Allwin21 Sputter Equipment Proven Deposition Rates(Con.)

The seller is neither responsible for any customers' applications and processes nor for any production loss due to machine failure, damage, or shut-down by any causes.

Rates shown above are given in angstroms/min/kw, and are typical only. Actual

rates for any given system will depend upon process and system parameters.

Rates are approximately linear with applied power except where otherwise

indicated. Some materials, due to their nature, are limited to power levels

substantially less than the maximum power ratings for each cathode type. 1 Insufficient data available for most materials with RF Delta operation - DC

magnetron recommended for metals. 2 Ferromagnetic materials - magnetron mode is possible with thin targets only but

not recommended. 3 Dielectric materials - require the use of RF power. Rates are non-linear.

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Allwin21 Sputter Equipment Typical Throughput and Substrate

Wafer Size

Loading Capability

Uniformity

3 inch 30 ±5%

4 inch 22 ±5%

14 ±4%

13 ±4%

5 inch 10 ±5%

9 ±4%

6 inch 8 ±5%

7 ±4%

8 inch 5 ±7% Pocket size and shape can be customized at extra cost.

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Allwin21 Sputter Equipment Typical Processes (1) High quality metal films can be routinely achieved:

•Material:Al-1%Si •Power:9kw •Table rotation:10 rpm •Argon pressure:8 mTorr •Film thickness:1.04 microns •Deposition time:5.8 minutes •Step height: 1.10 microns •Step slope: 80o •Step coverage: 62% horizontal-to-vertical •Specularity: 65-75% •Resistivity: 2.85μΩ-cm •Grain size:2 microns

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Allwin21 Sputter Equipment Typical Processes (2) Delta Cathode Material Al/1%Si Al/1%Si/2%Cu Al/4%Cu DC Power 10 kw 10 kw 10 kw Base Pressure 5X10-7 Torr 5X10-7 Torr 5X10-7 Torr Pumpdown Time 3.5 min. 3.5 min. 3.5 min Argon Pressure 8X10-3 Torr 8X10-3 Torr 8X10-3 Torr Table Rotation 2-5 rpm 2-5 rpm 2-5 rpm Deposition Rate 2000 Å /min 2000 Å /min 2000 Å /min Film Thickness 1.0 microns 1.0 microns 1.0 microns Step Hight 1.0 microns 1.0 microns 1.0 microns Step Slop/Coverage 70o/70% 70o/70% 70o/70%

80o/60% 80o/60% 80o/60% 90o/50% 90o/50% 90o/50%

Specularity 70-75% 80-85% 90-95% Resistivity 2.85-2.90μΩ-cm 2.95-3.00μΩ-cm 2.95-3.00μΩ-cm Grain Size 1-2μm 0.3-0.5μm 0.3-0.5μ Film Hardness (Annealed)

85kg/mm2 100kg/mm2 120kg/mm2

CV Shift 0.25V 0.15V 0.15V *Uniformity +/-5% +/-5% +/-5% Throughput is process dependent and may vary depending on etch and pre-heat cycles.

220 Cochrane Circle

Morgan Hill, CA95037,U.S.A.

Tel.:+1-408-778-7788

Fax.:+1-408-904-7168

www.allwin21.com

[email protected]

© 2015 Allwin21 Corp. All Rights Reserved. All specification and information here are subject to change without notice and can not be used for purchase and facility plan. 27

Contact Us

http://www.allwin21.com/

mailto:[email protected]

sputter deposition pvd 2017 - allwin21 · surface of substrate (lpcvd, apcvd,pecvd,mocvd) ③....

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