stgb10h60df, stgf10h60df, stgp10h60df ce(sat) · 1 electrical ratings table 1. absolute maximum...

1 23

TO-220

TAB

12

3

TO-220FP

13

TAB

D PAK2

C(2, TAB)

E(3)NG1E3C2T

G(1)

Features• High speed switching• Tight parameters distribution• Safe paralleling• Low thermal resistance• Short-circuit rated• Ultrafast soft recovery antiparallel diode

Applications• Motor control• UPS• PFC

DescriptionThese devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents anoptimum compromise between conduction and switching losses to maximize theefficiency of high switching frequency converters. Furthermore, a slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.

Product status link

STGB10H60DF

STGF10H60DF

STGP10H60DF

Trench gate field-stop 600 V, 10 A high speed H series IGBT

STGB10H60DF, STGF10H60DF, STGP10H60DF

Datasheet

DS9880 - Rev 4 - March 2020For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/applications/industrial-motor-control.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS9880https://www.st.com/en/applications/power-supplies-and-converters/uninterruptable-power-supplies-ups.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS9880https://www.st.com/en/applications/power-supplies-and-converters/pfc-converter-single-phase-input.html?ecmp=tt9471_gl_link_feb2019&rt=ds&id=DS9880https://www.st.com/en/product/stgb10h60df?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS9880https://www.st.com/en/product/stgf10h60df?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS9880https://www.st.com/en/product/stgp10h60df?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS9880http://www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol ParameterValue

UnitD2PAK, TO-220 TO-220FP

VCES Collector-emitter voltage (VGE = 0 V) 600 V

ICContinuous collector current at TC = 25 °C 20 20 (1)

AContinuous collector current at TC = 100 °C 10 10 (1)

ICP (2) Pulsed collector current 40 40 A

VGEGate-emitter voltage ±20

VTransient gate-emitter voltage ±30

IFContinuous forward current TC = 25 °C 20 20 (1)

AContinuous forward current at TC = 100 °C 10 10 (1)

IFP (2) Pulsed forward current 40 40 A

VISOInsulation withstand voltage (RMS) from all three leads toexternal heat sink (t = 1 s; Tc = 25 °C)

2.5 kV

PTOT Total power dissipation at TC = 25 °C 115 30 W

TSTG Storage temperature range -55 to 150°C

TJ Operating junction temperature range -55 to 175

1. Limited by maximum junction temperature.2. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

Symbol ParameterValue

UnitD2PAK, TO-220 TO-220FP

RthJC Thermal resistance junction-case IGBT 1.3 5 °C/W

RthJC Thermal resistance junction-case diode 2.78 6.25 °C/W

RthJA Thermal resistance junction-ambient 62.5 62.5 °C/W

STGB10H60DF, STGF10H60DF, STGP10H60DFElectrical ratings

DS9880 - Rev 4 page 2/24

2 Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitterbreakdown voltage VGE = 0 V, IC = 2 mA 600 V

VCE(sat)Collector-emittersaturation voltage

VGE = 15 V, IC= 10 A 1.50 1.95

VVGE = 15 V, IC = 10 A, TJ = 125 °C 1.65

VGE = 15 V, IC = 10 A, TJ = 175 °C 1.70

VGE(th)Gate thresholdvoltage VCE = VGE, IC = 250 μA 5 6 7 V

ICESCollector cut-offcurrent VCE = 600 V, VGE = 0 V 25 μA

IGESGate-emitter leakagecurrent VGE = ±20 V, VCE = 0 V ±250 nA

Table 4. Dynamic


Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V -

1300

- pFCoes Output capacitance 60

CresReverse transfercapacitance 30

Qg Total gate chargeVCC = 480 V, IC = 10 A, VGE = 0 to 15 V

(see Figure 33. Gate charge test circuit)-

57

- nCQge Gate-emitter charge 8

Qgc Gate-collector charge 27

STGB10H60DF, STGF10H60DF, STGP10H60DFElectrical characteristics

DS9880 - Rev 4 page 3/24

Table 5. Switching characteristics (inductive load)


td(on) Turn-on delay time VCE = 400 V, IC = 10 A, RG = 10 Ω,

VGE = 15 V

(see Figure 32. Test circuit for inductive loadswitching and Figure 34. Switchingwaveform)

-

19.5

-

nstr Current rise time 6.9

(di/dt)on Turn-on current slope 1170 A/μs

td(on) Turn-on delay time VCE = 400 V, IC = 10 A, RG = 10 Ω,

VGE = 15 V, TJ = 175 °C


20ns

tr Current rise time 6.8

(di/dt)on Turn-on current slope 1176 A/μs

tr(Voff) Off voltage rise time VCE = 400 V, IC = 10 A, RG = 10 Ω,

VGE = 15 V


-

19.6

- ns

td(off) Turn-off delay time 103

tf Current fall time 73

tr(Voff) Off voltage rise time VCE = 400 V, IC = 10 A, RG = 10 Ω,

VGE = 15 V, TJ = 175 °C


28

td(off) Turn-off delay time 104

tf Current fall time 110

tscShort-circuit withstandtime VCC ≤ 360 V, VGE = 15 V, RG = 10 Ω 3 5 - μs

Table 6. Switching energy (inductive load)


Eon (1)Turn-on switchingenergy VCE = 400 V, IC = 10 A,

RG = 10 Ω, VGE = 15 V(see Figure 32. Test circuit for inductive loadswitching)

-

83

- μJ

Eoff (2)Turn-off switchingenergy 140

Ets Total switching energy 223

Eon(1)Turn-on switchingenergy

VCE = 400 V, IC = 10 A,

RG = 10 Ω, VGE = 15 V

TJ = 175 °C(see Figure 32. Test circuit for inductive loadswitching)

148

Eoff (2)Turn-off switchingenergy 214

Ets Total switching energy 362

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.


DS9880 - Rev 4 page 4/24

Table 7. Collector-emitter diode


VF Forward on-voltageIF = 10 A

-1.7 2.2

VIF = 10 A, TJ = 175 °C 1.3

trrReverse recoverytime

Vr = 60 V; IF = 10 A, diF/dt = 100 A / μs

(see Figure 35. Diode reverse recoverywaveform)

-

107 ns

QrrReverse recoverycharge 120 nC

IrrmReverse recoverycurrent 2.24 A

trrReverse recoverytime Vr = 60 V; IF = 10 A, diF/dt = 100 A / μs

TJ = 175 °C

(see Figure 35. Diode reverse recoverywaveform)

161 ns

QrrReverse recoverycharge 362 nC

IrrmReverse recoverycurrent 4.5 A


DS9880 - Rev 4 page 5/24

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature forD2PAK and TO-220

Ptot

60

40

20

00 25 TC(°C)

(W)

100

80

50 75

100

175125 150

120

140

GIPD281020131339FSR

VGE≥ 15V, T J≤ 175 °C

Figure 2. Collector current vs case temperature for D2PAKand TO-220

IC

10

5

0 0 25 TC(°C)

(A)

100

15

50 75

20

175

VGE ≥ 15V, TJ ≤ 175 °C

125 150

GIPD230420191104MT

Figure 3. Power dissipation vs case temperature forTO-220FP

GIPD281020131351FSR

Figure 4. Collector current vs case temperature forTO-220FP

IC

10

5

00 TC(°C)

(A)

100

15

50

VGE ≥ 15V, TJ ≤ 175 °C

150

GIPD281020131401FSR

Figure 5. Output characteristics (TJ = 25°C)

IC

10

00 1 VCE(V)

(A)

4

20

2 3

VGE=15V

30

9V

11V

GIPD281020131405FSR

Figure 6. Output characteristics (TJ = 175°C)

IC

10

00 1 VCE(V)

(A)

4

20

2 3

VGE=15V

30

9V

11V

7V

13V

GIPD281020131411FSR

STGB10H60DF, STGF10H60DF, STGP10H60DFElectrical characteristics (curves)

DS9880 - Rev 4 page 6/24

Figure 7. VCE(sat) vs junction temperature

VCE(sa t)

1.8

1.6

1.4

1.2

-50 TJ(°C

GE= 15V IC= 20A

IC= 10A

IC

GIPD281020131418FSR

Figure 8. VCE(sat) vs collector current

GADG130620191022VCEC

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.80 4 8 12 16 20

VCE(sat) (V)

IC (A)

VGE = 15 VTJ = 175°C

TJ = -40°C

TJ = 25°C

Figure 9. Collector current vs switching frequency forD2PAK and TO-220

GADG130620191139CCS

40

30

20

10

010 0 10 1 10 2

IC (A)

f (kHz)

Rectangular current shape(duty cycle = 0.5, VCC = 400 V,RG = 4.7Ω, VGE = 0/15 V , TJ = 175 °C)

TC = 80°C

TC = 100°C

Figure 10. Collector current vs switching frequency forTO-220FP

GADG130620191023CCS

16

12

8

4

010 0 10 1 10 2

IC (A)

f (kHz)

Rectangular current shape(duty cycle = 0.5, VCC = 400 V,RG = 4.7Ω, VGE = 0/15 V , TJ = 175 °C)

TC = 80°C

TC = 100°C

Figure 11. Forward bias safe operating area for D2PAKand TO-220

IC

10

1

0.11 VCE(V)

(A)

Tj≤175 °C, Tc= 25°C

single pulseVGE = 15 V

10

10 µs

100 µs

1 ms

100

GIPD281020131452FSR

Figure 12. Forward bias safe operating area for TO-220FP

IC

10

1

0.11

Tj≤175 °C, Tc= 25°C

single pulseVGE = 15 V

VCE(V)

(A)

10

10 µs

100 µs

1 ms

100

GIPD281020131505FSR


DS9880 - Rev 4 page 7/24

Figure 13. Transfer characteristics

IC

15

10

5

06 7 VGE(V)

(A)

10

20

8 9

25

TJ=175°C

30

35

TJ=-40°C

TJ=25°C

VCE=5V

GIPD281020131513FSR

Figure 14. Diode VF vs forward current

GADG130620191024DVF

2.0

1.6

1.2

0.8

0.40 4 8 12 16 20

VF (V)

IF (A)

TJ = 40 °C

TJ = 25 °C

TJ = 175 °C

Figure 15. Normalized VGE(th) vs junction temperature

VGE(th)

1.1

1.0

0.6-50 TJ(°C)

(norm)

0 50 100 150

IC= 1mAVCE= VGE

0.7

0.8

0.9

GIPD281020131600FSR

Figure 16. Normalized V(BR)CES vs junction temperature

GADG130620191025NVBR

1.10

1.05

1.00

0.95

0.90-50 0 50 100 150

V(BR)CES (Norm.)

TJ (°C)

IC = 2mA

Figure 17. Capacitance variation

GADG130620191026CVR

10 3

10 2

10 1

10 0 10 -1 10 0 10 1 10 2

C (pF)

VCE (V)

CIES

COESCRES

f = 1MHZ

Figure 18. Gate charge vs gate-emitter voltage

VGE

8

0Qg(nC)

(V)

0 20

IC= 10AIGE= 1mAVCC= 480V

4

40

12

60

16

GIPD281020131606FSR


DS9880 - Rev 4 page 8/24

Figure 19. Switching energy vs collector current

GADG130620191055SLC

360

300

240

180

120

60

00 4 8 12 16 20

E (µJ)

IC (A)

VCC = 400V, VGE = 15V,RG = 10Ω, TJ = 175°C Eoff

Eon

Figure 20. Switching energy vs gate resistance

E

100RG(Ω)

(µJ)

0 10 20

140

180

220

30 40

260

EOFF

VCC = 400 V, VGE = 15 V, IC = 10 A, TJ = 175 °C

EON

GIPD281020131618FSR

Figure 21. Switching energy vs temperature

E

0TJ(°C)

(µJ)

-50 0 50

50

100

150

100 150

EOFF

VCC= 400V, VGE= 15V, RG= 10Ω, IC= 10A

EON

200

GIPD281020131623FSR

Figure 22. Switching energy vs collector-emitter voltage

E

0VCE(V)

(µJ)

200 300 400

50

100

150

EOFF

TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 10A

200

250

EON

250 350 450

GIPD281020131630FSR

Figure 23. Short circuit time and current vs VGE

tsc

10

8

6

10 VGE(V)12

(µs)

11

VCC= 360V, RG= 10W

4

tSC

ISC

13

12

ISC(A)

100

50

150

200

14

14

GIPD281020131634FSR

Figure 24. Switching times vs collector current

t

IC(A)

(ns)

0 4 810

12

tf

TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V

tdoff100

tr

tdon

16

GIPD281020131641FSR


DS9880 - Rev 4 page 9/24

Figure 25. Switching times vs gate resistance

t

1RG(Ω)

(ns)

0 10 20

10

30

tf

TJ= 175°C, VGE= 15V, IC= 10A, VCC= 400V

40

100

tdon

tdoff

tr

GIPD281020131655FSR

Figure 26. Reverse recovery current vs diode currentslope

Irm

0di/dt(A/µs)

(A)

0 200 400

8

600

IF = 10A, Vr = 400V

800

12

=175°C

=25°C

16

4

TJ

TJ

20

GIPD281020131713FSR

Figure 27. Reverse recovery time vs diode current slope

trr

0di/dt(A/µs)

(µs)

0 200 400

80

600

IF = 10A, Vr = 400V

800

120

=175°C

=25°C

160

40

TJ

TJ

GIPD281020131720FSR

Figure 28. Reverse recovery charge vs diode currentslope

Qrr

0di/dt(A/µs)

(nC)

0 200 400

300

600

IF = 10A, Vr = 400V

800

400

=175°C

=25°C200

TJ

TJ

100

500

GIPD281020131724FSR

Figure 29. Reverse recovery energy vs diode current slope

Err

20di/dt(A/µs)

(µJ)

0 200 400

80

600

IF = 10A, Vr = 400V

800

120=175°C

=25°C

40

140

TJ

TJ60

100

GIPD281020131728FSR


DS9880 - Rev 4 page 10/24

Figure 30. Thermal impedance for IGBT

10 10 10 10 10 tp(s)-5 -4 -3-2 -1

10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/t

tp

t

Single pulse

δ=0.5

ZthTO2T_B

Figure 31. Thermal impedance for diode


DS9880 - Rev 4 page 11/24

3 Test circuits

Figure 32. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF1000

µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 33. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 34. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)ton

tr(Ion)

td(off)

toff

tf

tr(Voff)tcross

90%

10%

Figure 35. Diode reverse recovery waveform

25

STGB10H60DF, STGF10H60DF, STGP10H60DFTest circuits

DS9880 - Rev 4 page 12/24

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 D²PAK (TO-263) type A2 package information

Figure 36. D²PAK (TO-263) type A2 package outline

0079457_A2_26

STGB10H60DF, STGF10H60DF, STGP10H60DFPackage information

DS9880 - Rev 4 page 13/24

https://www.st.com/ecopackhttp://www.st.com

Table 8. D²PAK (TO-263) type A2 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

A1 0.03 0.23

b 0.70 0.93

b2 1.14 1.70

c 0.45 0.60

c2 1.23 1.36

D 8.95 9.35

D1 7.50 7.75 8.00

D2 1.10 1.30 1.50

E 10.00 10.40

E1 8.70 8.90 9.10

E2 7.30 7.50 7.70

e 2.54

e1 4.88 5.28

H 15.00 15.85

J1 2.49 2.69

L 2.29 2.79

L1 1.27 1.40

L2 1.30 1.75

R 0.40

V2 0° 8°

Figure 37. D²PAK (TO-263) recommended footprint (dimensions are in mm)

Footprint_26

STGB10H60DF, STGF10H60DF, STGP10H60DFD²PAK (TO-263) type A2 package information

DS9880 - Rev 4 page 14/24

4.2 D²PAK packing information

Figure 38. D²PAK tape outline

STGB10H60DF, STGF10H60DF, STGP10H60DFD²PAK packing information

DS9880 - Rev 4 page 15/24

Figure 39. D²PAK reel outline

A

D

B

Full radius

Tape slot in core for tape start

2.5mm min.width

G measured at hub

C

N

40mm min. access hole at slot location

T

AM06038v1

Table 9. D²PAK tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base quantity 1000

P2 1.9 2.1 Bulk quantity 1000

R 50

T 0.25 0.35

W 23.7 24.3

STGB10H60DF, STGF10H60DF, STGP10H60DFD²PAK packing information

DS9880 - Rev 4 page 16/24

4.3 TO-220FP package information

Figure 40. TO-220FP package outline

7012510_Rev_13_B

STGB10H60DF, STGF10H60DF, STGP10H60DFTO-220FP package information

DS9880 - Rev 4 page 17/24

Table 10. TO-220FP package mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

B 2.50 2.70

D 2.50 2.75

E 0.45 0.70

F 0.75 1.00

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.20

G1 2.40 2.70

H 10.00 10.40

L2 16.00

L3 28.60 30.60

L4 9.80 10.60

L5 2.90 3.60

L6 15.90 16.40

L7 9.00 9.30

Dia 3.00 3.20

STGB10H60DF, STGF10H60DF, STGP10H60DFTO-220FP package information

DS9880 - Rev 4 page 18/24

4.4 TO-220 type A package information

Figure 41. TO-220 type A package outline

0015988_typeA_Rev_22

STGB10H60DF, STGF10H60DF, STGP10H60DFTO-220 type A package information

DS9880 - Rev 4 page 19/24

Table 11. TO-220 type A package mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.55

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10.00 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13.00 14.00

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

STGB10H60DF, STGF10H60DF, STGP10H60DFTO-220 type A package information

DS9880 - Rev 4 page 20/24

5 Ordering information

Table 12. Order codes

Order code Marking Package Packing

STGB10H60DF GB10H60DF D2PAK Tape and reel

STGF10H60DF GF10H60DF TO-220FPTube

STGP10H60DF GP10H60DF TO-220

STGB10H60DF, STGF10H60DF, STGP10H60DFOrdering information

DS9880 - Rev 4 page 21/24

Revision history

Table 13. Document revision history

Date Version Changes

12-Aug-2013 1 Initial release.

31-Oct-2013 2

Document status promoted from preliminary to production data.

Inserted Section 2.1: Electrical characteristics (curves).

Minor text changes.

20-Jun-2019 3

Updated title, applications and description in cover page.

Added Section 5 Ordering information.

Updated Section 2.1 Electrical characteristics (curves).

Minor text changes.

05-Mar-2020 4Updated Table 3. Static and Table 4. Dynamic.

Minor text changes.


DS9880 - Rev 4 page 22/24

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.3 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.4 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

STGB10H60DF, STGF10H60DF, STGP10H60DFContents

DS9880 - Rev 4 page 23/24

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2020 STMicroelectronics – All rights reserved


DS9880 - Rev 4 page 24/24

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1 Electrical ratings2 Electrical characteristics2.1 Electrical characteristics (curves)

3 Test circuits4 Package information4.1 D²PAK (TO-263) type A2 package information4.2 D²PAK packing information4.3 TO-220FP package information4.4 TO-220 type A package information

5 Ordering informationRevision history

stgb10h60df, stgf10h60df, stgp10h60df ce(sat) · 1 electrical ratings table 1. absolute maximum...

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