strongly correlated electrons: lda+u in practicesmr2626/hands_on/week1/july4/mastani-talk.pdf ·...
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Strongly correlated electrons: LDA+U inpractice
Tanusri Saha-Dasgupta
Dept of Condensed Matter Physics & Materials ScienceThematic Unit of Excellence on Computational Materials Science
S.N. Bose National Centre for Basic SciencesSalt Lake, Calcutta, INDIA
. – p.1/45
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Outline
• Introduction: why strong correlations ?
- Failure of one-electron theories- Examples of strongly correlated materials- Different energy scales and MIT in TMO
• Methods to deal with correlations in realistic ways
- Concepts (LDA+U)- Practical details- Example of CaFeO3 and La1/2Sr2/3FeO3
. – p.2/45
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Electronic Structure Calculations:
• Good description of many microscopic properties are obtained interms of -
Born-Oppenheimer ApproximationNuclei and the electrons to a good approximation may be treatedseparately.
One-electron ApproximationEach electron behaves as an independent particle moving in themean field of the other electrons plus the field of the nuclei.
. – p.3/45
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LDA
Most satisfactory foundation of the one electron picture is providedby the local approximation to the Hohenberg-Kohn-Sham densityfunctional formalism
≡ LDA
⇓
• LDA leads to an effective one electron potential which is a functionof local electron density.
• Leads to Self consistent solution to an one electron SchrödingerEqn.
. – p.4/45
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Flow-chart for LDA self-consistency
First principles information: atomic no., crystal structure⇓
Choose initial electron density ρ(r)
Calculate effective potential through LDA:
Veff (r) = Vion(r)+∫
d3r′Vee(r−r′)ρ(r′)+ δExc[ρ]δr
Solve K-S eqns:[−∆+Vion(r)++
∫d3r′Vee(r−r′)ρ(r′)+ δExc[ρ]
δr ]φi(r) = ǫiφi(r)
Needs to expand K-S wavefunctions in terms of basis, Φilm
Calculate charge density: ρ(r) =∑
|φi(r)|2
Iterate to selfconsistency⇓
Total energy, inter-atomic forces, stress or pressure, band struc-ture, . . . . – p.5/45
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Strongly correlated electron materials
∗ The conventional band-structure calculations within the frameworkof LDA is surprising successful for many materials.
∗ However, they fail for materials with strong e-e correlation !
• correlation effect necessarily arise, and
• the consideration of electron correlation effects provides thenatural way to understand the phenomena like the insulating natureof CoO.
. – p.6/45
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Strongly correlated electron materials
Ene
rgy
k
ρ (εF ) = 0
Even No. of e’sper unitcell
ρ (εF ) = 0ρ (εF ) = 0
Odd No. of e’sper unitcell
Ca, Sr
Ene
rgy
k
CE
nerg
y
k
Ef
Na, K
Ef
Even No. of e’sper unitcell+ band overlap
Predictions from LDA (Bandstructure)
Accordingly to LDA, odd no. of e’s per unit cell always give rise to Metal ! . – p.7/45
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Strongly correlated electron materials
Failure of Band Theory
Total No. of electrons = 9 +6 = 15
Band theory predicts CoO to bemetal, while it is the toughestinsulator known
−−) Importance of e−e interaction effects (Correlation)
Failure of LDA −) Failure of single particle picture
. – p.8/45
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Strongly correlated electron materials
e
+ U3sε
3s
−
NaNa+ −
0 ε3s2
NaNa0 0
ε3s
ener
gy
a (lattice constant)a0
2s
2p
3s
itinerant localizedenergy/atom
3s 3s/ t U
3sε
3s−At
3sε
H_3s = H_band + H_columb
. – p.9/45
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Examples of strongly correlated materials
Transition metals:
- d-orbitals extend much further from the nucleus than the coreelectrons.- throughout the 3d series (and even more in 4d series), d-electronsdo have an itinerant character, giving rise to quasiparticle bands!
- electron correlations do have important physical effects, but notextreme ones like localization.
. – p.10/45
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Examples of strongly correlated materials
f-electrons: rare earths, actinides and their compounds:
- rare-earth 4f-electrons tend to be localized than itinerant,contribute little to cohesive energy, other e- bands cross EF , hencethe metallic character.- actinide (5f) display behavior intermediate between TM and rareearths- e- correln becomes more apparent in compounds involvingrare-earth or actinides.- extremely large effective mass → heavy fermion behavior.
- At high temp local mag. mom and Curie law, low-temp screeningof the local moment and Pauli form → Kondo effect
. – p.11/45
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Examples of strongly correlated materials - TMO
- direct overlap between d-orbitals small, can only move throughhybridization!
4
t2g
eg10
2
2
4
2
2
2 d x2−y2
d 3z2−r2
2
22
d xy
d zxd yz
Free Atom Cubic Tetragonal Orthorhombic
6
Crystal Field Splitting
. – p.12/45
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Examples of strongly correlated materials- TMO
p σ
p π
2gt
ge
d x2−y2 d x2−y2d x2−y2
d xy d xy
Ligands (orbitals p/O)Hybridization via the
d xy d xz d yz
d 3z2−r2 d x2−y2
. – p.13/45
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Examples of strongly correlated materials - TMO
Three crucial Energies
tpd Metal-ligand Hybridization
∆ = ǫd − ǫp Charge Transfer Energy
U On-site Coulomb Repulsion
Band-width is controlled by: teff = t2pd/∆
. – p.14/45
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Examples of strongly correlated materials - TMO
The infamous Hubbard U
Naively:∫φ∗
i↑φi↑1
|r−r′|φ∗i↓φi↓
But this is HUGE (10 -20 eV)!
SCREENING plays a key role, in particular by 4s electrons
- Light TMOs (left of V): p-level much below d-level; 4s close by : U
not so big U < ∆
- Heavy TMOs (right of V): p-level much closer; 4s much above
d-level : U is very big U > ∆. – p.15/45
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Examples of strongly correlated materials - TMO
The Mott phenomenon: turning a half-filled band into an insulator
Consider the simpler case first: U < ∆
Moving an electron requires creating a hole and a doubleoccupancy: ENERGY COST U
This object, once created, can move with a kinetic energy of order of
the bandwidth W!
U < W: A METALLIC STATE IS POSSIBLE
U > W: AN INSULATING STATE IS PREFERRED
. – p.16/45
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Hubbard bands
d p∆ = | ε − ε |
Ene
rgy
p band
d band
U
Interaction U
The composite excitation hole+double occupancy forms a band (cfexcitonic band)
. – p.17/45
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Charge transfer insulators
d p∆ = | ε − ε |
tpd
tefftpdGain: ~ / ∆2
Cost: ∆ = ε − ε d p
Ene
rgy
d band
Heavy TMOs
p band
Fermi level
Interaction U
charge gap
Transition for ∆ >
Zaanen, Sawatzky, Allen; Fujimori and Minami
U
. – p.18/45
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Methods
Strongly correlated Metal
LDA gives correct answer
U < W
Weakly correlated MetalIntermediate regime − Hubbard bands +
QS peak (reminder of LDA metal)
?U >> W
Mott insulator
Can be described by "LDA+U" method
courtesy: K. Held. – p.19/45
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Methods
LDA gives correct answer
U < W
Weakly correlated Metal
U >> W
Mott insulator
Can be described by "LDA+U" method
. – p.20/45
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Basic Idea of LDA+U
PRB 44 (1991) 943, PRB 48 (1993) 169
• Delocalized s and p electrons: LDA
• Localized d or f-electrons: + U
using on-site d-d Coulomb interaction (Hubbard-like term)U
∑i 6=j ninj
instead of averaged Coulomb energyU N(N-1)/2
. – p.21/45
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n+1 n−1
n n
n+1 n−1
U
e
Hubbard U for localized d orbital:
U = E(d ) + E(d ) − 2 E(d )n
. – p.22/45
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LDA+U energy functional (Static Mean Field Theory):
ELDA+Ulocal = ELDA
−UN(N − 1)/2 +1
2U
∑
i 6=j
ninj
LDA+U potential :
Vi(r̂) =δE
δni(r̂)= V LDA(r̂) + U(
1
2− ni)
. – p.23/45
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LDA+U eigenvalue :
ǫi =δE
δni= ǫLDA
i + U(1
2− ni)
For occupied state ni = 1 → ǫi = ǫLDA − U/2
For unoccupied state ni = 0 → ǫi = ǫLDA + U/2
⇓∆ǫi = U MOTT-HUBBARD GAP
U = δδnd
LDAεεLDA
. – p.24/45
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Issues of Double Counting
. – p.25/45
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Issues of Double Counting
. – p.26/45
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Issues of Double Counting
. – p.27/45
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Rotationally Invariant LDA+U
LDA+U functional:
ELSDA+U [ρσ(r), {nσ}] = ELSDA[ρσ(r)] + EU [{nσ}] − Edc[{nσ}]
Screened Coulomb Correlations:
EU [{nσ}] =1
2
∑
{m},σ
{〈m, m′′
|Ve,e|m′
, m′′′
〉nσmm′ n−σ
m′′m′′′′ +
(〈m, m′′
|Ve,e|m′
, m′′′
〉 − 〈m, m′′
|Ve,e|m′′′
, m′
〉nσmm′ nσ
m′′m′′′′
LDA-double counting term:
Edc[{nσ}] =
1
2Un(n − 1) −
1
2J [n↑(n↑ − 1) + n↓(n↓ − 1)]
. – p.28/45
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Slater parametrization of U
Multipole expansion:
1
|r − r′ |=
∑
kq
4π
2k + 1
rk<
rk+1>
Y ∗kq(r̂)Ykq(r̂
′
)
Coulomb Matrix Elements in Ylm basis:
〈mm′
||m′′
m′′′
〉 =∑
k
ak(m, m′′
, m′
, m′′′
)F k
Fk → Slater integrals
Average interaction: U and JU = F0; J (for d electrons) = 1
14 (F 2 + F 4)
. – p.29/45
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Issues of Double Counting
. – p.30/45
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Issues of Double Counting
. – p.31/45
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How to calculate U and J
PRB 39 (1989) 9028
• Constrained DFT + Super-cell calculation
• Calculate the energy surface as a function of local chargefluctuations.
• Mapped onto a self-consistent mean-filed solution of theHubbard model.
• Extract U and J from band structure results.
. – p.32/45
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Notes on calculation of U
• Constrained DFT works in the fully localized limit. Thereforeoften overestimates the magnitude of U.
• For the same element, U depends also on the ionicity in differentcompounds → higher the ionicity, larger the U.
• One thus varies U in the reasonable range (Comparison withphotoemission..).
Better or more recent approach: Constrained RPA methodSee e.g.http://icts.res.in/media/uploads/Talk/Document/AryasetiawancRPA.pdffor details.
. – p.33/45
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Where to find U and J
PRB 44 (1991) 943 : 3d atoms
PRB 50 (1994) 16861 : 3d, 4d, 5d atoms
PRB 58 (1998) 1201 : 3d atoms
PRB 44 (1991) 13319 : Fe(3d)
PRB 54 (1996) 4387 : Fe(3d)
PRL 80 (1998) 4305 : Cr(3d)
PRB 58 (1998) 9752 : Yb(4f)
. – p.34/45
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CO and Insulating state in CaFeO 3,La1/3Sr2/3FeO3
TSD, Z. S. Popovic, S. Satpathy
Phys. Rev. B 72, 045143
. – p.35/45
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CaFeO3
2g13
g
JT Instability(cf: LaMnO )
3
Charge Disproportionation
Mn−O covalency Fe−O covalency
Whangbo et al, Inorg Chem (2002)
Fe 4+ (t e ) HIGH SPIN STATE
CaFeO3 CaO 2−
2+ Fe 4+
Unusual high valence state of Fe
NOMINAL VALENCE CONSIDERATION:
. – p.36/45
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CaFeO3
. – p.37/45
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. – p.38/45
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LDA+U band structure
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2g+O(p)t
Fe(A)−eg
Fe(B)−eg
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Hubbard U instead of Stoner I
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La1/3Sr2/3FeO3
2+3
La Sr FeO1/3 2/3
Sr
O 2−La 3+
Fe 3.67+
z
yx
NOMINAL VALENCE CONSIDERATION:
3 x Fe 3.67+2 x Fe 3+ + 1 x Fe 5+
2 x Fe 4+ + 1 x Fe 3+
(AFM Insulating)(PM Metallic)
T
direction
[111] pseudo−cubicFeB
CDW of 3−fold periodicity+ SDW of 6−fold periodicity
Neutron Diffraction (Battle et a.’90):No sign of structural modulation
Electron Diffraction (Li et al, ’97):Evidence of structural modulation
FeA
[Mossbauer data, Takano et. al.]
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La1/3Sr2/3FeO3
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La1/3Sr2/3FeO3
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Summary
∗ Charge disproportionation in CaFeO3, driven by lattice distortion.Insulating property needs the assistence from correlation.
∗ Charge disproportionation and insulating state in La1/2Sr2/3FeO3
driven by correlation, magnetism and disorder.
∗ Lattice of La1/2Sr2/3FeO3 reacts to the charge modulation.
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