syllabus mev

8/12/2019 Syllabus MEV

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Course Title: Semiconductor

Materials and Devices (EC545)

Crystal structure, intrinsic and doped

crystals, excess carriers and current

transport. Band structure, carrier energy

and Fermi distributions for free carriers,donor and acceptor impurities,

determination of band gap, impurity

ionization, and critical temperatures for

intrinsic ionization and onset of impurity

deionization. Impurity diffusion processes

and profile derivations, built-in electric

field and carrier profiles. p-n junction,

tunnel diode, quasi Fermi levels, depletion

width capacitance and its application in

doping profile determination, I-V

characteristics of narrow and wide basediodes and their equivalent circuits,

breakdown mechanisms, small signal ac

impedance. Formation of transistor,

current gains, dc and low frequency

characteristics, base resistance and power

gain, drift and graded base transistors.

Surface states, measurement of surface

charge, Q-V/I-V characteristics and

equivalent circuit models of MOS capacitor

and MOSFET. Rectifying and ohmic

contacts, role of surface states,application in energy level

characterization; Comparison of p-n

junction and Schottky diodes. Dependence

of energy bandgap on pressure,

evaluation of energy pressure coefficients,

direct-indirect conversion and

identification of defect levels.

Course Title: MOS Device Physics

and Modeling (EC- 546)

Circuit design, MOSFET modeling, model

parameters, interconnects. MOS transistor

structure and its operation:

Characteristics, scaling theory, hot carrier

effects, parasitic elements, MOSFET circuit

models, modeling of hot carrier and short

channel effects. MOS capacitor with zero

and nonzero bias, C-V curves, anomalous

C-V curves, non-uniform doped substrate.

MOSFET DC models: Pao-Sah model,

charge sheet model, piece-wise linear

model, models for depletion devices,

carrier mobility models in deep-submicron

and nanoscale dimensions, shortgeometry models, source/drain resistance

evaluation. Dynamic models: Intrinsic

charges and capacitance, Meyersmodel,

quasi-static and non-quasi-static model,

low frequency modeling of MOS

transistors, high frequency modeling of

MOS transistors. SPICE MOSFET models:

Level 1, 2, 3 and 4 models and their

comparison. Statistical modeling: Model

sensitivity, principal factor method,

principal component analysis, regressionmodels.

Course Title: Device and Circuit

Simulation (EC-502).

Prime importance of circuit and device

simulations in VLSI; Nodal, mesh,

modified nodal and hybrid analysis

equations. Solution of network equations:

Sparse matrix techniques, solution of

nonlinear networks through Newton-

Raphson technique, convergence andstability.Multistep methods: Solution of

stiff systems of equations, adaptation of

multistep methods to the solution of

electrical networks, general purpose

circuit simulators.

Mathematical techniques for device

simulations: Poisson equation, continuity

equation, drift-diffusion equation,

Schrodinger equation, hydrodynamic

equations, trap rate, finite difference

solutions to these equations in 1D and 2D

space, grid generation.

Semiconductor parameter modeling:

Models of mobility, lifetime and bandgap.

Simple device simulator: Computation of

characteristics of simple devices like p-n

junction, MOS capacitor and MOSFET;

Small-signal analysis


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Course Title: Laboratory (EC

540)

Study of Hall Effect in semiconductors.

Four probe method for resistivity and

bandgap measurement of semiconductors.Study of Magneto resistance in

semiconductors. I-V characteristics of

devices with variation in temperature. h-

parameter measurement for MOSFETs. C-

V characteristics of p-n junction and MOS

capacitor. Device characteristics of LED,

lasers and solar cells. Study of working of

diffusion furnace. Fabrication and

characterization of Schottky diodes.

Fabrication and characterization of MOS

capacitor. Deposition of thin films usingphysical vapor deposition (vacuum

evaporator) and spin coating techniques.

MOSFET process/device simulation and

parameter extraction.

Course Title: VLSI Physical Design

(EC 541N)

Layout and design rules, materials for

VLSI fabrication, basic algorithmic

concepts for physical design, physical

design processes and complexities.

Partition: Kernigham-Lins algorithm,

Fiduccia Mattheyes algorithm,

Krishnamurty extension, hMETIS

algorithm, multilevel partition techniques.

Floor-Planning: Hierarchical design,

wirelength estimation, slicing and non-

slicing floorplan, polar graph

representation, operator concept,

Stockmeyer algorithm for floorplanning,

mixed integer linear program.

Placement: Design types: ASICs, SoC,

microprocessor RLM; Placement

techniques: Simulated annealing,

partition-based, analytical, and Halls

quadratic; Timing and congestion

considerations.

Routing: Detailed, global and specialized

routing, channel ordering, channel routing

problems and constraint graphs, routing

algorithms, Yoshimura and Kuhs method,

zone scanning and net merging, boundary

terminal problem, minimum densityspanning forest problem, topological

routing, cluster graph representation.

Sequential Logic Optimization and Cell

Binding: State based optimization, state

minimization, algorithms; Library binding

and its algorithms, concurrent binding.

Course Title: SemiconductorMicrowave Devices and

Applications (EC542N)Transient and ac behaviour of p-n

junctions, effect of doping profile on the

capacitance of p-n junctions, noise in p-n

junctions, high-frequency equivalent

circuit, varactor diode and its applications;

Schottky effect, Schottky barrier diode

and its applications; Heterojunctions.

Tunneling process in p-n junction and MIS

tunnel diodes, V-I characteristics and

device performance, backward diode.

Impact ionization, IMPATT and other

related diodes, small-signal analysis of

IMPATT diodes. Two-valley model of

compound semiconductors, Vd-E

characteristics, Gunn effect, modes of

operation, small-signal analysis of Gunn

diode, power frequency limit.

Construction and operation of microwave

PIN diodes, equivalent circuit, PIN diode

switches, limiters and modulators. High

frequency limitations of BJT, microwave

bipolar transistors, heterojunction bipolar

transistors; Operating characteristics ofMISFETs and MESFETs, short-channel

effects, high electron mobility transistor.

Characteristics and design of microstrips,

slotlines and coplanar waveguides. Design

considerations for microwave and

millimeter wave amplifiers and oscillators,

circuit realization, noise performance.


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Introduction to MEMS for RF applications:

micromachining techniques for fabrication

of micro switches, capacitors and

inductors.

Course Title: OptoelectronicMaterials and Devices (EC 543N)Optical processes in semiconductors, EHP

formation and recombination, absorption

and radiation in semiconductor, deep level

transitions, Auger recombination,

luminescence and time resolved

photoluminescence, optical properties of

photonic band-gap materials. Junction

photodiode: PIN, heterojunction and

avalanche photodiode; Comparisons of

various photodetectors, measurementtechniques for output pulse. Photovoltaic

effect, V-I characteristics and spectral

response of solar cells, heterojunction and

cascaded solar cells, Schottky barrier and

thin film solar cells, design of solar cell.

Modulated barrier, MS and MSM

hotodiodes; Wavelength selective

detection, coherent detection; Microcavity

photodiode. Dynamic effects of MOS

capacitor, basic structure and frequency

response of charge coupled devices,buried channel charge coupled devices.

Electroluminescent process, choice of light

emitting diode (LED) material, device

configuration and efficiency; LED:

Principle of operation, LED structure,

frequency response, defects, and

reliability. Semiconductor laser diode,

Einstein relations and population

inversion, lasing condition and gain,

junction lasers, hetrojunction laser, multi

quantum well lasers, beam quantizationand modulation.

Course Title: Digital VLSI Circuit

Design (EC-544)

Basic MOS structure and its static

behavior; Quality metrics of a digital

design: Cost, functionality, robustness,

power, and delay. Static CMOS inverter,

switching threshold and noise margin

concepts and their evaluation, dynamic

behavior, power consumption and effect of

scaling on CMOS performance metrics.

CMOS. Static CMOS design, ratioed logic,

pass transistor logic, dynamic logic, speedand power dissipation in dynamic logic,

cascading dynamic gates, CMOS

transmission gate logic. Static latches and

registers, bistability principle, MUX based

latches, static SR flip-flops, master-slave

edge-triggered register, dynamic latches

and registers, concept of pipelining, pulse

registers, nonbistable sequential circuit.

Synchronous timing basics, classification,

skew and jitter, and their sources, clock

distribution techniques, self-timed circuitdesign, synchronizers and arbiters, clock

synthesis and synchronization using PLL.

Design of Arithmetic Building Blocks:

adder, multiplier, shifter, and other

operators; Power and speed trade-off in

datapath structures. Memory and Array

Structure: Core, ROM, RAM, peripheral

circuitry, memory reliability and yield,

SRAM and DRAM design, evaluation of

RNM and WNM from butterfly curves, flash

memory.

Course Title: CompoundSemiconductors and RF Devices

(EC-547)III-V opto- and high frequency materials:

Bonds, crystal lattices, crystallographic

planes and directions, direct and indirect

semiconductors and their comparison for

optical applications, optical processes of

absorption and emission, radiative and

non-radiative deep level transitions, phaseand energy band diagrams of binary,

ternary and quaternary alloys,

determination of cross-over compositions

and band structures. High frequency

devices: Gunn diode, RWH mechanism, v-

E characteristic, formation of domains,

modes of operation in resonant circuits,


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fabrication, control of v-E characteristics

by ternary and quaternary alloys.

Heterostructures: Introduction, abrupt

isotype/anisotype junctions, band

diagrams and band off-sets, electrical and

optoelectronic properties, symmetrical andasymmetrical p-n diodes and their

characteristics, 2-Dimensional Electron

Gas (2-DEG). Heterostructure devices:

HBT, MOSFET, HEMT, quantum well and

tunneling structures, lasers, LED and

photodetectors, optoelectronic ICs and

strained layer structures. Miscellaneous

devices: Compound semiconductor

MESFETs, infrared and window effect in

photovoltaic converters, strain sensors

and their sensitivities, QWITT and DOVETTdevices.

Course Title: Analog VLSI CircuitDesign (EC-548)Basic MOS models, device capacitances,

parasitic resistances, substrate models,

transconductance, output resistance, fT,

frequency dependence of device

parameters, device parameters in

subthreshold operation.Single stage

amplifier configurations, cascade stage,frequency response of single stage

amplifiers, basic differential pair,

differential pair with MOS loads, device

mismatch effects, frequency response of

differential amplifiers, Basic current

mirrors, cascode current mirrors, active

current mirrors, biasing, impact of device

mismatch, on-chip feedback network,

noise, impact of feedback on noise.

Operational amplifiers: Performance

parameters, one-stage and two-stage OpAmps, gain boosting, comparison,

common mode feedback, input range,

slew rate, power supply rejection, noise in

Op Amps. Non-linear analog blocks:

Comparators, charge-pump circuits and

multipliers. Oscillators and phase locked

loop: Ring oscillators, LC oscillators,

voltage controlled oscillators, simple

Phase Locked Loop (PLL), charge pump

PLL, delay locked loops. Data converters:

Data converters fundamentals, DAC

architectures, ADC architectures. Basic

CMOS RF IC Design: Circuit design oftransceivers, CMOS Low noise amplifiers

and mixers, power amplifiers. DSM issues:

Impact of DSM effects on analog circuits,

analog interconnects layout issues, low

voltage and low-power circuits.

Course Title: VLSI Technology (EC-

549)

Device scaling and Moores law, basic

device fabrication methods, alloy junction

and planar process. Crystal growth:Czochralski and Bridgman techniques,

Characterization methods and wafer

specifications, defects in Si and GaAs.

Oxidation: Surface passivation using

oxidation. Deal-Grove model, oxide

characterization, types of oxidation and

their kinematics, thin oxide growth

models, stacking faults, oxidation

systems. Diffusion and ion-implantation:

Solutions of diffusion equation, diffusion

systems, ion implantation technology, ionimplant distributions, implantation

damage and annealing, transient

enhanced diffusion and rapid thermal

processing. Epitaxy and thin film

deposition: Thermodynamics of vapor

phase growth, MOCVD, MBE, CVD,

reaction rate and mass transport limited

depositions, APCVD/LPVD, equipments

and applications of CVD, PECVD, and PVD.

Etching: Wet etching, selectivity, isotropy

and etch bias, common wet etchants,orientation dependent etching effects;

Introduction to plasma technology,

plasma etch mechanisms, selectivity and

profile control plasma etch chemistries for

various films, plasma etch systems.

Lithography: Optical lithography

contact/proximity and projection printing,


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resolution and depth of focus, resist

processing methods and resolution

enhancement, advanced lithography

techniques for nanoscale pattering,

immersion, EUV, electron, X-ray

lithography. Interconnect and backendtechnology: Interconnect RC delay and

scaling, multilevel interconnect, inter-

metal dielectric films, planarization,

chemical mechanical polishing (CMP),

oxide and metal CMP, metal migration, Cu

interconnect technology. VLSI process

integration: CMOS IC technology, strained

Si processes, high k-metal gate and

Copper low-k technologies, MOS memory

technology, bipolar IC fabrication.

Assembly, packaging yield and reliability:Package types, VLSI assembly

technologies; Yield loss and modeling,

reliability requirements, accelerated

testing, BIST.

Course Title: CAD for VLSI (EC-641)

Evolution of design automation; CMOS

realizations of basic gates. Behavioral,

structural and physical models, design

flow. Types of CAD tools, introduction to

logic simulation and synthesis. Syntax,hierarchical modeling, Verilog construct,

simulator directives, instantiating

modules, gate level modeling. Event

based and level sensitive timing control,

memory initialization, conditional

compilation, time scales for simulation.

Static timing analysis, delay, switch level

modeling, user defined primitive (UDP),

memory modeling. Logic synthesis of HDL

construct, technology cell library, design

constraints, synthesis of Verilog construct.Various optimization techniques, design

size, Commercial FPGA architecture, LUT

and routing architecture, FPGA CAD flow;

Typical case studies.

Course Title: Nanoscale Devices andCircuit Design (EC-642)Leakage current mechanisms in nanoscale

CMOS, leakage control and reduction

techniques, process variations in devices

and interconnects. Silicidation andCu-low k interconnects, strain silicon

biaxial stain and process induced strain;

Metal-high k gate; Emerging CMOS

technologies at 32nm scale and beyond

FINFETs, surround gate nanowire

MOSFETs, heterostructure (III-V) and Si-

Ge MOSFETs. Two dimensional scaling

theory of single and multigate MOSFETs,

generalized scale length, quantum

confinement and tunneling in MOSFTEs,

velocity saturation, carrier back scatteringand injection velocity effects, scattering

theory of MOSFETs. Si and hetero-

structure nanowires MOSFETs, carbon

nanotube MOSFETs, quantum wells,

quantum wires and quantum dots; Single

electron transistors, resonant tunneling

devices. CMOS logic power and

performance, voltage scaling issues;

Introduction to low power design;

Performance optimization for data paths.

Statistical circuit design, variabilityreduction, design for manufacturing and

design optimization; Sequential logic

circuits, registers, timing and clock

distribution, IO circuits and memory

design and trends.Non-classical CMOS:

CMOS circuit design using non-classical

devices FINFETs, nanowire, carbon

nanotubes and tunnel devices.

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