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The top documents tagged [nm in0]
Modeling of HEMT
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Research Portfolio
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(In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) R. Hey, M. Höricke, A. Trampert, U. Jahn, P. Santos Paul-Drude-Institut für Festkörperelektronik, Berlin
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Investigation of optical properties of InGaN multiple quantum wells
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Corso FS02: Materiali e Dispositivi per optoelettronica, spintronica e nanofotonica Modulo 1: Crescita epitassiale di materiali semiconduttori (Giorgio
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Y.C. Jiang
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The state-of-the-art InP-based HEMTs Ankit Sharma ECE695 20 Feb, 2015
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Introduction strong coupling: polaritons sample
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