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© Electronics ECE 1312 Recall-Lecture 2 Introduction to Electronics Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration,
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Jia Yao and Vishwani D. Agrawal Department of Electrical and Computer Engineering Auburn University Auburn, AL 36830, USA Dual-Threshold Design of Sub-Threshold
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Circuit design with a commercial 0.13 m CMOS technology for high energy physics applications K. Hänsler, S. Bonacini, P. Moreira CERN, EP/MIC
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© Electronics ECE 1312 Recall-Lecture 3 Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration, n i
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By Nasir Mahmood. The NoC solution brings a networking method to on-chip communication
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