tcad: suprem,piscessuprem, piscesbandi.cbnu.ac.kr/~ysk/devnot6.pdf · 2011-04-10 · tcad:...

TCAD: SUPREM, PISCESTCAD SUPREM, PISCES

김 영 석

충북대학교 전자정보대학

2012.9.1

E il ki @ b kEmail: [email protected]

전자정보대학 김영석 1

TCADTCAD(Technology Computer Aided Design, Technology CAD)

Electronic design automation

Process CAD

M d l t (diff i I/I) > Si l t d iModels process steps (diffusion, I/I) => Simulates device structure (junction depth, doping profiles), e.g., SUPREM

Device CAD

Models devices based on fundamental physics (mobilities, doping profiles) => Simulates device behavior, e.g., PISCES

Ci it CADCircuit CAD

Compact Modeling of the device (not based on fundamental physics) => Simulates circuit behavior, e.g., SPICEp


TCAD

From WikiDFM: Design For Manufacturing PSM: Phase Shift Masking


DFM: Design For Manufacturing, PSM: Phase Shift MaskingCMP: Chemical Mechanical Planarization, STI: Shallow Trench Isolation

TCAD Work Flow


http://www3.ntu.edu.sg/eee/eee6/LectureNotes/E425/index.htm

Process Simulation


Process Simulation

ModelsInput- Grid Generation

OutputS / h- Diffusion

- OxidationI l t ti

- Grid Generation- Mask Definition- Structure Initialization

- Structure/Mesh- Doping profiles

Junction Depths- Implantation- Deposition/masking

- Process Step Spec.- Junction Depths

/masking/etching


Process SimulatorsProcess flow simulators are tools which simulate the full semiconductor manufacturing flow

Process Simulators

SUPREM3: 1-D Standford UnivSUPREM3: 1-D, Standford Univ.

SUPREM4: 2-D

FEDSS: IBM

PROPHET: AT&T

DIOS: ISE (Swiss)

TSUPREM4: commertial, based on SUPREM4

TAURUS-PROCESS

ATHENA: commertial based on SUPREM4ATHENA: commertial, based on SUPREM4

FLOOPS: U. of Florida

Equipment Simulators

ILLUM2D/3D: the Institute for Microelectronics at the Technical University of Vienna, lithography

SPLAT/SAMPLE2D/3D PROLITH SOLID E ACESSPLAT/SAMPLE2D/3D, PROLITH, SOLID E, ACES


http://www.iue.tuwien.ac.at/phd/minixhofer/node4.html

Summary of NMOS Process Flow


TCAD InputLayout

P C ditiProcess Conditions

Diffusion: Temp., Pressure, Time, Flow Rates

Oxidation: Temp. Ramps, Gas RampsOxidation Temp. Ramps, Gas Ramps

Ion Implantation: Dose, Energy, Tilt, Revolving, Beam Div., Ionization Level


NMOS Process Simulations with TSUPREM4

Mesh Generations



Oxidation



Nitride Deposition p s



Nitride Etch



Field Oxidation



Nitride Remove



Field Implant Profiles p s



VTH Adjust Implant Profiles j s p s



Before Gate Oxidation



Gate Oxidation



Polysilicon Gate Depositionys p s



Gate Poly Etch y



LDD and S/D Implant p



LDD Spacer Oxide Etch p



Metal Etch


Device Simulation


Device Simulation

Basic Eqs.i i ’

Input- Structure/Mesh

OutputS / h- Poission’s eq.

- Continuity eq.Drift Diffusion eq

- Structure/Mesh- Doping Profiles- Structure Initialization

- Structure/Mesh- Doping Profiles

Junction Depths- Drift-Diffusion eq.Models- Rec-Gen

- Process Step Spec.- Junction Depths

- Mobility- F-D, Boltzmann


Device SimulatorsGeneric Device Simulators

PISCES 2ET: Standford Univ.

FIELDAY

PADREPADRE

MINIMOS-NT

MEDICI: based on PISCESMEDICI: based on PISCES

DESSIS

ATLAS

FLOODS

Specialized Device Simulators

MINIMOS: f MOSFETMINIMOS: for MOSFET

PISCES: for MOSFET, Standford Univ.

SEQUOIASEQUOIA

BIPOLE: for Bipolar


NMOS Device Simulations with MEDICI

Initial Grid



Doping Regridp g g



Potential Regrid g



Impurity Profilesp y s



Impurity Contoursp y s



Gate Characteristics s s



Drain Characteristics s s



Drain Characteristics: Potential Contours s s s



Substrate Currents



Gate Current



Drain Current Snapback p


NMOS Device Simulations with MEDICI: Ex2

Definition of Mesh, Electrodes, Contacts s , s, s



Doping Profilesp g s



ID-Vg Curveg


tcad: suprem,piscessuprem, piscesbandi.cbnu.ac.kr/~ysk/devnot6.pdf · 2011-04-10 · tcad:...

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