technology cad (including lecture-tutorial-laboratory modules) dept. of electronics & ece indian...
TRANSCRIPT
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Technology CAD
(including Lecture-Tutorial-Laboratory Modules)Dept. of Electronics & ECE
Indian Institute of Technology-Kharagpur First R & D Centre in
Information and Communication Technology (ICT) Development among IITs
and Universities in IndiaPI: Prof. C. K Maiti, Co-PI: Prof A. S Dhar, and Prof
A. Halder
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Research & Development focus
1. To develop e-learning materials for Technology CAD (TCAD) Course (including tutorial and laboratory modules) for final year undergraduates and postgraduate students and implement Technology CAD (TCAD) online simulation laboratory — real time simulation laboratory accessed through the Internet which can expand the range of simulation experiments in Technology CAD, transmit online instructions and study materials for anyone, anywhere and anytime.
2. Development of e-content for an integrated teaching environment which allows for the provision of online live lectures (a 40-lecture module with tutorials) and a laboratory (10-12 simulation experiments) session for geographically dispersed students.
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Steps for Development of RealTIME
Measurement-based Internet Laboratory
Design of ExperimentRemote Operation of the
Instruments(via LabVIEW, IC/CV lite, Easy Expert, VEE etc)
Conversion to Web Application
Launching on the Internet
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Total Budget Outlay (Rs. in lakhs)Years
Head 1st 2nd 3rd Total
Capital Equipment Rs. 80.00 - - 80.00FE Comp.
Consumable stores Rs. 10.00 10.00 10.00 30.00Software/License Fee
Duty on import (if any) Rs. nil nil nilnil
Manpower (JPA/RS/Eqv.) Rs. 7.00 8.00 9.0024.00
Travel & Training Rs. 3.00 4.00 5.0012.00
Contingencies/Accessories Rs. 10.00 13.00 16.0039.00
Grand Total (FE Comp.) 110.00 35.00 40.00 185.00
Grand Total : Rs. 185.00 lakhs
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Course Description
Introduction and overview; History and structures; The role of TCAD for Semiconductor technology development; TCAD principles; Physics of VLSI fabrication technology; Tool Integration; Structure editing and mesh generation; CMOS and Bipolar Process technology Si, SiGe, III-V Semiconductors;Process modeling and simulation – general; Simulation of device characteristics;
Text Book: G. A. Armstrong and C. K. Maiti, "TCAD for Si, SiGe and GaAs Integrated Circuits“, The Institution of Engineering and Technology (IET), UK, 2008.
40-50 lectures including tutorial based on the following contents:
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Device level simulation challenges; Introducing new device models; Heterojunction device modeling; Simulation of silicon germanium (SiGe) HBTs; Simulation of heterostructure FETs (HFETs); Simulation of AlGaAs/GaAs devices; Virtual Wafer Fabrication (VWF) automation tools; Example of VWF methodology; Extraction of DC and SPICE model parameters; Small signal AC analysis for CMOSand bipolar transistors; Application of mixed-mode simulation; TCAD calibration procedure; Process compact model, Design for manufacturing (DFM),Integration into the CADENCE design framework.
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VLSI Engineering Laboratory Module will consist of the
following experiments1. Doping Profile Determination 2. Bipolar Device Characterization3. MOS Capacitor Characterization4. MOSFET Characterization5. High Frequency Characteristics of BJT6. MOSFET SPICE Parameter Extraction7. Bipolar Transistor SPICE Parameter
Extraction8. 1/f Noise Characterization in Transistors9. Low Temperature Characterization of
Transistors10.LNA Characterization11.Noise Modeling in MOSFETs12.Cutoff Frequency Determination
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What is Technology CAD (TCAD)
Rising Technological ComplexityGate insulator
•SiO2/HiK•Leakage•Trapping
Gate•Work function•Depletion
Channel•Mobility
Raised S/D•Material•Activation•Diffusion
S/D extension•Activation•Junction (USJ)
Device Scaling = More Simulation NeededApplication: Design, analyze and optimize
semiconductor technologies and devices
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Full TCAD Flow
Block
Gate
Circuit
Device
Process
Materials
Analog/DigitalDesign
Subcircuit expansion
Compact Model (BSIM, PSP, PCM)
Parameter extraction
Process/structural variations
Transistor optimization
Technology development
System performance
Process variationsProcess effect
on device/circuit
Defect effect on device/circuit
Block
Gate
Circuit
Device
Process
Materials
Analog/DigitalDesign
Analog/DigitalDesign
Subcircuit expansionSubcircuit expansion
Compact Model (BSIM, PSP, PCM)
Parameter extraction
Process/structural variations
Transistor optimization
Technology development
System performance
Process variationsProcess effect
on device/circuit
Defect effect on device/circuit
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TCAD Optimization and Manufacturability
Manufacturing
TCAD Simulations
Generate new data
PCM
Visual querying &Visual optimization
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Sensitivity, uncertainty & yield analysisDetermine the most stable process condition
Marked process conditions indicate low sensitivity of the device characteristics to the variations in corresponding Set of process (RED marked)
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Yield analysis Device spec limits
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Some Strained-Engineered Devices
0 0.1-0.1
0
-0.1
0.1
0.2 Silicon substrate
SiGe
(a)
SiGe
X (um)
Y (
um)
0 0.1-0.1
0
-0.1
0.1
0.2 Silicon substrate
SiGe SiGe
X (um)
Y (
um)
0 0.1-0.1
0
-0.1
0.1
0.2 Silicon substrate
SiGe
(a)
SiGe
X (um)
Y (
um)
0 0.1-0.1
0
-0.1
0.1
0.2 Silicon substrate
SiGe SiGe
X (um)
Y (
um)
0 0.1-0.1
0
-0.1
0.1
0.2
X (um)
X (
um
)Silicon substrate
Cap layer(b)
0 0.1-0.1
0
-0.1
0.1
0.2
X (um)
X (
um
)Silicon substrate
Cap layer
0 0.1-0.1
0
-0.1
0.1
0.2
X (um)
X (
um
)Silicon substrate
Cap layer(b)
0 0.1-0.1
0
-0.1
0.1
0.2
X (um)
X (
um
)Silicon substrate
Cap layer
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Some available facilities
Hardware facilities
Software ServerNetLAB Server
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Noise Figure AnalyzerNetwork Analyzer
Spectrum Analyzer DC Probe station
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AFM Setup
Agilent Semiconductor Test Analyzer
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Software facilities• Instrument Control software
LabVIEW, VEE, VSA, IC-CAP, IC/C-V light, EasyExpert, Microsoft Inst., etc.
• TCAD softwareSILVACO, Sentaurus, MEDICI, TSupreme, Taurus, Monte Carlo, HSPICE, Nanosim, PCM studio, PARAMOS, etc.
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Requirements: List of Equipment
1. Four Probe Resistivity Meter (25 lakhs) 2. Mask Aligner (75 lakhs) 3. Clean Air station (20 lakhs) 4. Rapid Thermal Annealing System (45 lakhs) 5. Semiconductor Test System (35 lakhs) 6. Microwave/ECR Plasma System (55 lakhs) 7. DC/RF Sputtering System (45 lakhs) 8. Probe station (50 lakhs) 9. Programmable power supply (20 Lakhs) 10. Thickness Measurement system (30 lakhs) 11. AFM/STM (30 lakhs) 12. Spectrum analyzer (10 Lakhs) 13. LCR Meter (10 lakhs) 14. Semiconductor Parameter Analyzer (50 lakhs) 15. Noise Figure Analyzer (55 lakhs) 16. Network Analyzer up to 26 GHz with calibration kits (200
lakhs) 17. Parameter extraction and device/process modeling
software tools (45 lakhs)
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Achievement in ICT Area
1. NetLAB based Measurement and Analysis2. First On Line Laboratory Demonstration at
Andhra University (AU)3. First short term course on Information
Communication Technology (ICT) on Hardware Laboratory at IIT-Kharagpur
4. Arranged several short term courses on Technology CAD (TCAD) at IIT-Kharagpur
5. Arranged several short term courses on Technology CAD (TCAD) outside IIT-Kharagpur
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Book Published1. Applications of Silicon-Germanium
Heterostructure Devices, Institute of Physics Publishing (IOP), UK, 2001.
2. Silicon Heterostructures: Materials and Devices, Institute of Electrical Engineers (IEE), UK, 2001.
3. Selected Works of Professor Herbert Kroemer, Edited, World Scientific, Singapore 2008.
4. Strained-Si Heterostructure Field-Effect Devices, CRC Press, London, 2007.
5. TCAD for Si, SiGe and GaAs Integrated Circuits, IET, UK, 2008.
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OUR Publications on INTERNET LABORATORY on
MICROELECTRONICS• A. Maiti and S. S. Mahato, Online Semiconductor Device
Characterization and Parameter Extraction Using World Wide Web, Proc. NCNTE, Feb. 29 – Mar. 01, pp.160-163, 2008.
• A. Maiti and S. S. Mahato, Web-based Semiconductor Technology CAD (TCAD) Laboratory, 50th Intl. Symp. ELMAR-2008, Zadar, CROATIA, 10-12 September 2008.
• A. Maiti and S. S. Mahato, Web-based Semiconductor Process and Device Simulation Laboratory, Proc. of ICEE2008, Intl. Conf. on Engineering Education, "New Challenges in Engineering Education and Research in the 21st Century", PÉCS-BUDAPEST, HUNGARY, JULY 27-31, 2008.
• S. C. Pandey, A. Maiti, T. K. Maiti and C. K. Maiti, Online MOS Capacitor Characterization in LabVIEW Environment, International Journal of Online Engineering (iJOE), vol.5, pp.57-60, 2009.
• A. Maiti, M. K. Hota, T. K. Maiti and C. K. Maiti, Online Microelectronics and VLSI Engineering Laboratory, International Workshop on Technology for Education, Bangalore, Aug 04-06, 2009.
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Currently Available Experiments via INTERNET
from IIT-KHARAGPUR(RealTIME Online Measurement-based)
1. Gummel Plot of a BJT2. Output Characteristics of a BJT3. Threshold Voltage of a MOSFET4. Output Characteristics of a MOSFET5. MOSFET Parameter Extraction6. BJT SPICE Parameter Extraction7. Low Noise Amplifier
Characterization8. Surface Analysis using AFM/STM9. Circuit Analysis Using NI-Elvis
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NetLAB Webpage
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Partner/USER Institutions
Our Current Partners areVIT, Vellore
NIST, Berhampur
OUR ONLINE LABORATORY HAS BEEN USED and TESTED BY
More Than 50 ENGINEERING COLLEGES
and10 UNIVERSITIES
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Short Term Course/Workshop
AICTE/MHRD sponsored SUMMER SCHOOL at IIT KHARAGPUR
May 17-23, 2009
Applications of ICT for
Hardware Laboratory
52 participants from 40 Engineering Colleges
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List of Participating Institutions
VIT University, VelloreNIST, BerhampurWest Bengal University of Technology,
KolkataUniversity of Calcutta Inst. of Radiophysics and ElectronicsNorth Bengal University, SiliguriNIT, DurgapurBengal Engg. and Science University, ShibpurTezpur (Central) University, Tezpur
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IMPS College of Engg. and Technology, MaldaGurgaon College of Engg., HaryanaHi-Tech Institute of Technology, KhurdaNational Institute of Technology, WarangalSSN College of Engg., TamilnaduSynergy Institute of Engg. and Technology, DhenkanalMedi-caps Institute of Technology Management, IndoreDr. BR Ambedkar National Institute of Technology, PunjabJaypee Univ. Of Information Tech., Solan, H.P.Dronacharya College of Engg., Gurgaon, HaryanaCVR College of Engg., Hyderabad, A.P.Sai Spurthi Institute of Technology, A.P.Lingaya's Institute of Mgt and Technology, Faridabad
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Purushottam Institute of Engg. Tech., Rourkela, OrissaNational Institute of Science & Technology, OrissaHi-Tech Institute of Tech., OrissaGLAITM, Mathura, U.P.Dr. B. C. Roy Engg. College, DurgapurTradient Academy of Tech., OrissaModern Engg. & Management Studies, OrissaGLA Institute of Tech. & Management, MathuraSynergy Institute of Engg. & Tech., OrissaITER, BhubaneswarSynergy Institute of Engg. & Tech., OrissaDRIEMS, CuttackLingaya’s University, FaridabadBirla Institute of Technology, PatnaDr. Sivanthi Aditanar College of Engg., Tamilnadu
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PSN Group of Institutions, TamilnaduOrissa Engg. College, BhubaneswarJIET, CuttackRaajdhani Eng. College, BhubaneswarWorld Institute of Technology, GurgaonDept. of Bio-Medical Engg., Andhra UniversityAndhra University College of Engg., VisakhapatnamGITAM University, VisakhapatnamChaitanya college of Engg., VisakhapatnamSRKR Engg. College, VisakhapatnamGovt. Polytechnic, BheemiliSanketika Vidya Parishad Engg. College, VisakhapatnamJNTU College of Engg., HyderabadNational Engg. College, TamilnaduInstitute of Technology and Management, Gurgaon
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Thank You