ted ciszek - patents and publications

29/6/2014 Ted Ciszek (T.F. Ciszek) Publications

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Ted Ciszek's Patents & Publications:

Patents:

1. Theodore F. Ciszek, "Method of Growing Semiconductor Rods from a Pedestal," U.S. Patent 3,627,500 (1971).

2. Theodore Frank Ciszek, "Method for Drawing a Monocrystal from a Melt Formed About a Wettable Projection," U.S. Patent 4,000,030

(1976).

3. Theodore Frank Ciszek and Guenter Herbert Schwuttke, "Method and Apparatus For Forming An Elongated Silicon Crystalline Body Using a

{211} Orientated Seed Crystal," U.S. Patent 4,075,055 (1978).

4. Theodore F. Ciszek, "Apparatus for Pulling Crystal Ribbons from a Truncated Wedge Shaped Die," U.S Patent 4,116,641 (1978).

5. Robert A. Frosch, Theodore F. Ciszek, and Guenther H. Schwuttke, "Growth of Silicon Carbide Crystals On a Seed while pulling Silicon

Crystals From a Melt," U.S Patent 4,152,194 (1979).

6. Robert A. Frosch and Theodore F. Ciszek, "Method of Growing a Ribbon Crystal Particularly Suited For Facilitating Automated Control ofRibbon Width," U.S. Patent 4,217,165 (1980).

7. Theodore F. Ciszek, "Method and Apparatus for Forming Silicon Crystalline Bodies," U.S. Patent 4,239,734 (1980).

8. Theodore F. Ciszek and G.H. Schwuttke, "Method for Directional Solidification of Silicon," U.S. Patent 4,243,471 (1981).

9. Theodore F. Ciszek and G.H. Schwuttke, "Method and Apparatus for Drawing a Monocrystalline Ribbon from a Melt," U.S. Patent 4,299,648(1981).

10. Theodore F. Ciszek, "Method For Forming Silicon Crystalline Bodies," U.S. Patent 4,304,623 (1981).

11. Theodore F. Ciszek, "Method and Apparatus for Casting Conductive and Semiconductive Materials," U.S. Patent 4,572,812 (1986).

12. Theodore F. Ciszek and Jeffrey L. Hurd, "Apparatus for Melt Growth of Crystalline Semiconductor Sheets," U.S. Patent 4,594,229 (1986).

13. Theodore F. Ciszek, "Apparatus and Method for the Horizontal, CrucibleFree Growth of Silicon Sheet Crystals," U.S. Patent 4,650,541

(1987).

14. Theodore F. Ciszek, "Method of Synthesizing and Growing CopperIndiumDiselenide (CuInSe2) Crystals," U.S. Patent 4,652,332 (1987).

15. Theodore F. Ciszek, "Large Single Crystal Quaternary Alloys of IBIIIASe2 and Methods of Synthesizing the Same," U.S. Patent 4,721,539

(1988).

16. Theodore F. Ciszek, "Method for the MeltGrowth of Ternary IIIV Crystals Which are Uniform in Composition," US Patent 5,047,112(1991).

17. Theodore F. Ciszek, "Method for Forming Thin, LargeArea Superconducting Layers on Flat and/or Elongated Substrates," U. S. Patent

5,304,534 (1994)

18. Theodore F. Ciszek, "Thin Silicon Layer Crystallization from HighTemperature Solutions of Si in Copper," U. S. Patent 5,314,571 (1994).

19. Theodore F. Ciszek, "Apparatus and Method for Measuring the Thickness of Semiconductor Wafers," U. S. Patent 5,396,332 (1995)

20. Theodore F. Ciszek, Substrate for Thin Silicon Solar Cells, U.S. Patent 5,401,331 (1995).

21. Theodore F. Ciszek and Tihu Wang, Crystallization from High Temperature Solutions of Si in Cu/Al Solvent, U.S. Patent 5,544,616 (1996).

22. Theodore F. Ciszek, "Substrate for Thin Silicon Solar Cells," U.S. Patent 5,785,769 (1998).

23. Tihu Wang and Theodore F. Ciszek, Process for Polycrystalline Film Silicon Growth, U.S. Patent 6,281,098 B1 (Aug. 28, 2001).

24. Tihu Wang and Theodore F. Ciszek , "Purified Silicon Production System, U.S. Patent 6,712,908 B2 (Mar. 30, 2004).

25. Tihu Wang and Theodore F. Ciszek , "Purification and Deposition of Silicon By An Iodide Disproportionation Reaction, U.S. Patent6,468,886 (2002).

26. Tihu Wang and Theodore Ciszek, "Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth," U.S. Patent 6,984,263 (Jan. 10,2006).

27. Theodore F. Ciszek, Device for High Throughput Growth of Thin Silicon Rods Used as Substrates in Polycrystalline Silicon Production,Provisional Patent Application filed.

28. Theodore F. Ciszek and Tihu Wang, Method for Purifying Silicon Feedstock via Silicon Recrystallization for Impure Silicon in SelectedMetals, Provisional Patent Application filed.

Publications:

1. T.F. Ciszek, "Solid-Liquid Interface Morphology of FloatZoned Silicon Crystals," in: Semiconductor Silicon , Eds. R.R. Haberecht and E.L.Kern (The Electrochemical Soc., New York, 1969) pp. 156-68.



2. E. Sirtl and T.F. Ciszek, "Controlled Growth and Dissolution of Semiconductor Crystals," in: Preprint Volume, Materials Engineering andSciences Division Biennial Conference, Atlanta, Georgia (AIChE, 67th National Meeting, 1970) pp. 104-111.

3. T.F. Ciszek, "NonCylindrical Growth Habit of FloatZoned DislocationFree [111] Silicon Crystals," J. of Crystal Growth 10 (1971) 263.

4. T.F. Ciszek, "Growth of 40 mm Diameter Silicon Crystals by a Pedestal Technique Using Electron Beam Heating," J. of Crystal Growth 12

(1972) 281.

5. T.F. Ciszek, "Edge-Defined, Film-Fed Growth of Silicon Ribbons," Mat. Res. Bull. 7 (1972) 731.

6. T.F. Ciszek, "Characteristics of [115] DislocationFree FloatZoned Silicon Crystals," J. Elec. Chem. Soc. 120 (1973) 799.

7. T.F. Ciszek, "Copper Decoration and Xray Topography of Point Defects in DislocationFree Silicon Crystals Grown Under Various

Conditions," in: Semiconductor Silicon 1973, Eds. H.R. Huff and R.R. Burgess (The Electrochemical Soc., Chicago 1973) pp. 150160.

8. T.F. Ciszek and G.H. Schwuttke, "Silicon Ribbons A New Approach to Low Cost Single Crystal Silicon Solar Cells," in: Proc. International

Conf. on Photovoltaic Power Generation, Hamburg, Germany, Sept. 2527, 1974, Ed. H.R. Losch (Deutschen Gesellschaft fur Luft undRaumfahrt e. V., Koln, 1974) pp. 159175.

9. T.F. Ciszek and G.H. Schwuttke, "Growth and Characterization of Silicon Ribbons Produced by a Capillary Action Shaping Technique,"phys. stat. sol. (a) 27, (1975) 231.

10. T.F. Ciszek, "Melt Growth of Crystalline Silicon Tubes by a Capillary Action Shaping Technique," phys. stat. sol. (a) 32, (1975) 521.

11. T.F. Ciszek, "Maximum Growth Rates for MeltGrown Ribbonshaped Crystals," J. Appl. Phys. 47, (1976) 440.

12. T.F. Ciszek and G.H. Schwuttke, "Thermal Balancing via Distributed InertGas Streams for HighMeniscus Ribbon Crystal Growth," J. of

Crystal Growth 42 (1977) 483.

13. T.F. Ciszek and G.H. Schwuttke, "Inexpensive Silicon Sheets for Solar Cells," NASA Tech. Briefs, Winter (1977) 432.

14. G.H. Schwuttke, K. Yang, and T.F. Ciszek, "Electrical and Structural Characterization of Silicon Ribbons Produced through Capillary ActionShaping," J. Crystal Growth 43 (1978) 329.

15. G.H. Schwuttke, T.F. Ciszek, K.H. Yang, and A. Kran, "Low Cost Silicon for Solar Energy Conversion Applications," IBM J. of Research

and Dev. 22 (1978) 335.

16. T.F. Ciszek, G.H. Schwuttke, and K.H. Yang, "Directionally Solidified SolarGrade Silicon Using Carbon Crucibles," J. Crystal Growth 46

(1979) 527.

17. T.F. Ciszek, "Device for Monitoring the Growth of Silicon Crystal," Ribbons, Insul./Circuits 25 (1979) 23.

18. L.L. Kazmerski, P.J. Ireland and T.F. Ciszek, "SIMS Identification of Impurity Segregation to Grain Boundaries in Cast Multigrained Silicon,

Proc. Second Int. Conf. on Secondary Ion Mass Spectroscopy," Palo Alto, CA. (SpringerVerlag, NY, 1979), pp. 103106.

19. T.F. Ciszek, G.H. Schwuttke, and K.H. Yang, "SolarGrade Silicon by Directional Solidification in Carbon Crucibles," IBM, J. Res. & Dev.

23, (1979) 270.

20. K. Yang, G.H. Schwuttke, and T.F. Ciszek, "Structural and Electrical Characterization of Crystallographic Defects in Silicon Ribbons," J.


21. T.F. Ciszek, G.H. Schwuttke, and K.H. Yang, "Factors Influencing Surface Quality and Impurity Distribution in Silicon Ribbons Grown by the

Capillary Action Shaping Technique (CAST)," J. Crystal Growth 50 (1980) 160.

22. T.F. Ciszek and J.L. Hurd, "Melt Growth of Silicon Sheets by EdgeSupported Pulling," in: Proceedings of the Symposia on Electronic and

Optical Properties of Polycrystalline or Impure Semiconductors and Novel Silicon Growth Methods, Ed. K.V. Ravi and B. O'Mara. St. Louis,

MO; lll6 May, l980 (The Electrochemical Soc., Pennington, NJ, 1980, Proceedings Volume 805) pp. 213222.

23. T.F. Ciszek and J.L. Hurd, "Contiguous Capillary Coating of Silicon on Porous Carbon Substrates," in: l4th IEEE Photovoltaic Specialist

Conf. Record, San Diego, Calif. Jan. 710, 1980 (IEEE, New York, 1980) pp. 397399.

24. L.L. Kazmerski, P.J. Ireland and T.F. Ciszek, "Evidence for the Segregation of Impurities to Grain Boundaries in Multigained Silicon Using

AES and SIMS," Appl. Phys. Lett. 36 (1980) 323.

25. L.L. Kazmerski, P.J. Ireland, and T.F. Ciszek, "Electrical and Compositional Properties of Grain Boundaries in Multigrained Silicon Using

Surface Analysis Techniques," J. Vac. Sci. Technol. 17, (1980) 34.

26. T.F. Ciszek (Book Chapter), "The Capillary Action Shaping Technique and Its Applications," in: Crystals Growth, Properties, andApplications, Vol. 5, Ed. J. Grabmaier (SpringerVerlag, Berlin, 1981) pp. 110146.

27. T.F. Ciszek, M. Schietzelt, L.L. Kazmerski, J.L. Hurd and B. Fernelius, "Growth of Silicon Sheets from Metallurgical Grade Silicon," in: l5th

IEEE Photovoltaics Specialist Conf. Record, Kissimmee, FL, 1981 (IEEE, New York, 1981) pp. 581588.

28. T.F. Ciszek, "A Comparison of Crystal Growth Techniques for LowCost Silicon Solar Cells" (invited), in: Proceedings I. Simposio Brasileirode Microelectronica (911 Sept. 1981, Sao Paulo) p. 485.

29. T.F. Ciszek, "EdgeSupported Pulling of Silicon Sheets," in: Proceedings I. Simposio Brasileiro de Microelectronica (911 Sept. 1981, Sao

Paulo) p. 559.

30. T.F. Ciszek, "Silicon Crystal Growth for Photovoltaic Applications A Review and Comparison of Methods" (Invited), in: Proc. of Symp.



Materials and New Processing Technologies for Photovoltaics, Ed. John P. Dismukes, et. al. Montreal, May, 1982 (The Electrochemical

Soc., Pennington, NJ, 1982, Proceedings Volume 828) pp. 7088.

31. T.F. Ciszek, J.L. Hurd, and M. Schietzelt, "Filament Materials for EdgeSupported Pulling of Silicon Sheet Crystals," J. Electrochem. Soc.

129 (1982) 2838.

32. J.L. Hurd and T.F. Ciszek, "Semicontinuous EdgeSupported Pulling of Silicon Sheets," J. Crystal Growth 59 (1982) 499.

33. T.F. Ciszek (invited plenary address), "Silicon Sheet Technologies," in: 16th IEEE Photovoltaic Specialists Conf. Record, San Diego, CA,

1982 (IEEE, New York, 1982) p. 316.

34. T.D. Burleigh, S. Wagner, and T.F. Ciszek, "Ellipsometry of Randomly Rough Oxidized Silicon Surfaces," Solar Cells 13 (1984) 179.

35. S. Hogan, T. Schuyler and T.F. Ciszek, "Characterization of Bicrystal Grain Boundary Properties Using Device Structures," in: 17th IEEE

Photovoltaic Specialists Conf. Record, Kissimmee, Fl, 1984 (IEEE, New York, 1984) pp. 574579.

36. Y.S. Tsuo, J.L. Hurd, R.J. Matson and T.F. Ciszek, "Electron Channeling and EBIC Studies of EdgeSupported Pulling Silicon Sheets," IEEE

Transactions on Electron Devices ED31 (1984) 614.

37. T.F. Ciszek, "Orientation and Morphology Effects in Rapid Silicon Sheet Solidification," in: Proceedings of the FlatPlate Solar Array Project

Research Forum on the HighSpeed Growth and Characterization of Crystals for Solar Cells, Ed. K.A. Dumas (Jet Propulsion LaboratoryPublication 8423, Pasadena,1984) p. 223.

38. T.F. Ciszek (Invited Review), "Techniques for the Crystal Growth of Silicon Ingots and Ribbons," J. Crystal Growth 66 (1984) 655.

39. T.F. Ciszek, "Growth and Properties of [100] and [111] Dislocation-free Silicon Crystals from a Cold Crucible," J. of Crystal Growth 70

(1984) 324.

40. T.F. Ciszek, "Growth and Properties of CuInSe2 Crystals Produced by Chemical Vapor Transport with Iodine," J. of Crystal Growth 70

(1984) 405.

41. J.L. Hurd and T.F. Ciszek, "Growth and Properties of CuInSe2 Crystals from Hydrothermal Solution," J. of Crystal Growth 70 (1984) 415.

42. T.D. Burleigh, S. Wagner, and T.F. Ciszek, "Ellipsometry of Randomly Rough Oxidized Silicon Surfaces," Solar Cells (1984), 13, 2, 179-

183.

43. T.F. Ciszek, "Crystallographic Growth Forms of Silicon on a Free Melt Surface," J. Electrochem. Soc. 132 (1985) 422.

44. T.F. Ciszek (Book Chapter), "The Growth of Silicon Ribbons for Photovoltaics by EdgeSupported Pulling," in: Silicon Processing for

Photovoltaics, Eds. C.P. Khattak and K.V. Ravi (Elsevier Science Publishers, Amsterdam, 1985) p. 131.

45. T.F. Ciszek, "Solid/Melt Interface Studies of HighSpeed Silicon Sheet Growth," Final Report, DOE/JPL Contract WO8746831, (1985).

46. T.F. Ciszek, "Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation," J. Electrochemical Soc. 132

(1985) 963.

47. T.F. Ciszek, S. Hogan, and J.L. Hurd, "Silicon Sheet Bicrystal Growth for the Study of Grain Boundary Effects in Solar Cells," J. CrystalGrowth 69 (1984) 335.

48. T.F. Ciszek (Book Chapter), "Silicon for Solar Cells," in: Crystal Growth of Electronic Materials, Ed. E. Kaldis, (Elsevier Science Publishers,Amsterdam, 1985) pp. 185210.

49. T.F. Ciszek, "Synthesis and Crystal Growth of Copper Indium Diselenide from the Melt," J. of Electronic Materials 14 (1985) 451.

50. T.F. Ciszek, "Current Status of Silicon Materials Research for Photovoltaic Applications," in: SPIE Proceedings of Symposium on

Photovoltaics, Ed. Satyen K. Deb, Arlington, VA, April 112, 1985 (SPIE, Bellingham, WA, 1985, Proceedings Volume 543) pp. 1019.

51. T.F. Ciszek, "High Purity Silicon Crystal Growth Investigations, Final Report, DOE/JPL Contract WO8762841 (1986).

52. T.F. Ciszek, "A Graphical Treatment of Combined Evaporation and Segregation Contributions to Impurity Profiles for ZoneRefining in

Vacuum," J. of Crystal Growth 75 (1986) 61.

53. T.F. Ciszek, "Melt Growth and Some Properties of CuxAg(1x)InSe2 and CuInyGa(1y)Se2 Chalcopyrite Alloy Crystals," J. of Crystal Growth

79 (1986) 689.

54. R. Bacewicz, J.R. Durrant, T.F. Ciszek, and S.K. Deb, "Optical and Electrical Properties of CuxAg1xInSe2 and CuInyGa1ySe2 Alloys,"

Proceedings of the 7th International Conference on Ternary and Multinary Compounds, Eds. S. K. Deb and A. Zunger, (Materials Research

Society Press, Pittsburgh, 1987) pp. 155160.

55. T.F. Ciszek, C.D. Evans, and S.K. Deb, "Lattice Parameter Determinations of CuxAg1xInSe2 and CuInyGa1ySe2 Crystalline Chalcopyrite

Quaternary Solid Solutions Grown from the Melt," Proceedings of the 7th International Conference on Ternary and Multinary Compounds,

Eds. S. K. Deb and A. Zunger (Materials Research Society Press, Pittsburgh, 1987) pp. 195200.

56. T.F. Ciszek, "Material Considerations for HighEfficiency Silicon Solar Cells," Solar Cells 21 (1987) 81.

57. T.F. Ciszek, "XRay Topographic Observations of Crystal Structure in Silicon Ribbons Grown by Various Methods," J. of Crystal Growth 82

(1987) 182.

58. T. F. Ciszek, R. Bacewicz, J. R. Durrant, S. K. Deb, and D. Dunlavy, "Crystal Growth and Photoelectrical Properties of CuxAg1xInSe2 and



CuInyGa1ySe2 Solid Solutions," in: 19th IEEE Photovoltaic Specialists Conf. Record, New Orleans, 1987 (IEEE, New York, 1987) p.

1448.

59. R. R. King, R. A. Sinton, R. M. Swanson, and T. F. Ciszek, "Low Surface Recombination Velocities on Doped Silicon and Their Implications

for Point Contact Solar Cells," in: 19th IEEE Photovoltaic Specialists Conf. Record, New Orleans, 1987 (IEEE, New York, 1987) p. 1168.

60. D. G. Kilday, G. Margaritondo, T. F. Ciszek, S. K. Deb, and Alex Zunger, "The CommonAnion Rule and Its Limits: Photoemission Studies

of CuInxGa1xSe2Ge and CuxAg1xInSe2Ge Interfaces," Phys. Rev. B 36 (1987) 9388.

61. H. KatayamaYoshida, Y. Okabe, T. Takahashi, T. Sasaki, T. Hirooka, T. Suzuki, T. Ciszek, and S. Deb, "Growth of YBa2Cu3O7x Single

Crystals," Japanese Journal of Applied Physics 26 (1987) L2007.

62. H. KatayamaYoshida, T. Hirooka, A. Mascarenhas, Y. Okabe, T. Takahashi, T. Sasaki, A. Ochiai, T. Suzuki, J. Pankove, T. Ciszek, and

S. Deb, "Isotope Effect in Superconducting YBa2Cu3O7x System," Japanese Journal of Applied Physics 26 (1987) L2085.

63. R. Bacewicz and T. F. Ciszek, "Preparation and Characterization of Some AIBIICV Type Semiconductors," Appl. Phys. Lett. 52 (1988)

1150.

64. T. H. Wang, T. F. Ciszek, and T. Schuyler, "MicroDefect Effects on Minority Carrier Lifetime in High Purity, DislocationFree Silicon Single

Crystals" Solar Cells. 24 (1988) 135.

65. T. F. Ciszek and C. D. Evans, "A Simple HighPressure Furnace for LiquidEncapsulated Bridgman/Stockbarger Crystal Growth," Journal of


66. R. Bacewicz and T.F. Ciszek, "A New NarrowGap Semiconductor LiCdAs," Mat. Res. Bull. 23 (1988) 1247.

67. D. G. Kilday, G. Margaritondo, T. F. Ciszek, and S. K. Deb, "The CommonAnion Rule and the Role of Cation States: Binary versus Ternary

Semiconductors," J. Vac. Sci. Technol. B 6 (1988) 1364.

68. T. F. Ciszek, J. P. Goral, C. D. Evans and H. KatayamaYoshida, "Crystal Growth and Superconducting Phase Formation from

BiCaSrCuO Liquids," J. of Crystal Growth 91 (1988) 312.

69. H. KatayamaYoshida, T. Yonezawa, T. Hirooka, Y. Okabe, T. Takahashi, T. Sasaki, M. Hongoh, Y. Yamada, T. Suzuki, S. Hosoya, M.

Sato, T. Ciszek and S. K. Deb, "Growth and Characterization of YBa2Cu3O7x Single Crystals," Physica C 153 (1988) 425.

70. H. KatayamaYoshida, T. Hirooka, A. Oyamada, Y. Okabe, T. Takahashi, T. Sasaki, A. Ochiai, T. Suzuki, A. J. Mascarenhas, J. I.

Pankove, T. F. Ciszek, S. K. Deb, R. B. Goldfarb, and Yongkang Li "Oxygen Isotope Effect in the Superconducting BiSrCaCuO

System," Physica C 156 (1988) 481.

71. R. B. Goldfarb, T. F. Ciszek, and C. D. Evans, "Superconducting Properties of MeltCast BiSrCaCuO," J. Appl. Phys. 64 (1988) 5914.

72. S. K. Pang, A. Rohatgi, and T. F. Ciszek "Doping Dependence of Minority Carrier Lifetime in GaDoped Silicon," in: 20th IEEE Photovoltaic

Specialists Conf. Record, Las Vegas, 1988 (IEEE, New York, 1988) p. 435.

73. T. F. Ciszek, "Silicon Material Quality and Throughput: The High and the Low, the Fast and the Slow," in: 20th IEEE Photovoltaic Specialists

Conf. Record, Las Vegas, 1988 (IEEE, New York, 1988) p. 31.

74. T. F. Ciszek, Tihu Wang, T. Schuyler, and A. Rohatgi, "Some Effects of Crystal Growth Parameters on Minority Carrier Lifetime in

FloatZoned Silicon," J. Electrochem. Soc. 136 (1989) 230.

75. T. F. Ciszek and E. Tarsa, "Determination of the Superconducting Transition Onset Temperature in SmallVolume Specimens," in: Science

and Technology of ThinFilm Superconductors, Eds. Bob McConnell and Stuart Wolf (Plenum Publishing Corp., New York, 1989) p. 415.

76. T. F. Ciszek and C. D. Evans, "Melt Growth of BiSrCaCuO Superconducting Sheets and Filaments," in: Science and Technology of

ThinFilm Superconductors, Eds. Bob McConnell and Stuart Wolf (Plenum Publishing Corp., New York, 1989) p. 301.

77. T. F. Ciszek and C. D. Evans, "Single Crystal Growth of YBa2Cu3O7x, ErBa2Cu3O7x, and Bi2Sr2Ca0.8Cu2O8 Superconductors,"

Proceedings of IndustryUniversity Advanced Materials Conference, Denver, March 69, 1989, p. 512.

78. T. F. Ciszek, T. Schuyler, and T. Wang, "Crystal Growth Parameter Effects on the Minority Charge Carrier Lifetime of HighPurity,

DislocationFree, FloatZoned Silicon," Proceedings of IndustryUniversity Advanced Materials Conference, Denver, March 69, 1989, p.

264.

79. T. F. Ciszek, R. Schwerdtfeger and C. D. Evans, "LiquidPhase Formation of BiSrCaCuO Superconducting Wires and Sheets," J. ofCrystal Growth 104 (1990) 136.

80. R. Bacewicz and T. F. Ciszek, "LiquidEncapsulated Crystal Growth and Electrical Properties of Sb2Se3 and Bi2S3," J. of Crystal Growth

109 (1991) 133.

81. T. H. Wang, T. F. Ciszek, and T. Schuyler, "Charge Carrier Recombination Centers in HighPurity, DislocationFree, FloatZoned Silicon

Due to GrowthInduced Microdefects," J. of Crystal Growth 109 (1991) 155.

82. T. F. Ciszek and C. D. Evans, "SingleCrystal Growth and LowField AC Magnetic Susceptometry of YBa2Cu3O7x, ErBa2Cu3O7x, and

Bi2Sr2Ca0.8Cu2O8 Superconductors," J. of Crystal Growth 109 (1991) 418.

83. T. F. Ciszek, "Silicon FloatZoned Crystal Growth for High Minority Charge Carrier Lifetime Material Applications," Solar Cells 30 (1991)

5.



84. L. A. Boatner, T. F. Ciszek, and T. Surek, (eds.) American Crystal Growth 1990, Special Issue of the J. of Crystal Growth 109 (1991).

85. S. P. Ahrenkiel, C. H.Qiu, N. Wada, and T. F. Ciszek, "PressureInduced Oxygen Intercalation into YBa2Cu3O7x: Raman Scattering and

XRay Diffraction Studies," M24 3, Bull. of the Amer. Phys. Society 36 no. 3, 1991.

86. C. H. Qiu, S. P. Ahrenkiel, N. Wada, and T. F. Ciszek, "XRay Diffraction and HighPressure Raman Scattering Study of IodineIntercalated

Bi2Sr2CaCu2O8+x," Physica C 185189 (1991) 825.

87. Geula Dagan, T. F. Ciszek, and David Cahen, "Ion Migration in Chalcopyrite Semiconductors," J. Phys. Chem. 96 (1992) 11009.

88. T. F. Ciszek, R. W. Burrows, T. H. Wang, and J. Alleman, "Growth and Properties of Thin Crystalline Silicon Layers," 11th Photovoltaic

Advanced Research and Development Project Review Meeting, May 1315, 1992, Denver, AIP Conf. Proc. 268 (1992) 75.

89. C. R. Schwerdtfeger and T. F. Ciszek, "LargeGrained Copper Indium Diselenide Crystal Growth by Computer Controlled HighPressure

LEDS," 11th Photovoltaic Advanced Research and Development Project Review Meeting, May 1315, 1992, Denver, AIP Conf. Proc. 268

(1992) 200.

90. T. F. Ciszek, T. H. Wang, R. W. Burrows and X. Wu, "HighTemperature Solution Growth of Thin Crystalline Silicon Layers," Proc. 11th

EuropeanCommunity Photovoltaic Solar Energy Conference, Montreux, Switzerland, October 1216, 1992, pp. 423426.

91. T. F. Ciszek, T. H. Wang, R. W. Burrows and X. Wu, "Growth of Thin Crystalline Silicon Layers for Photovoltaic Device Use," J. of Crystal

Growth 128 (1993) 314.

92. C. H. Qui, N. Wada, and T. F. Ciszek, "Structural Transitions in IodineIntercalated Bi2Sr2CaCu2O8+x: XRay and Raman Scattering

Studies," Jpn. J. Appl. Phys. 32 (1993) Suppl. 321, pp. 5456.

93. J.D. Webb, D.J. Dunlavy, T. Ciszek, R.K. Ahrenkiel, M.W. Wanlass, R. Noufi, and S.M. Vernon, "Room-Temperature Measurement of

Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer," Applied Spectroscopy 47 (1993) pp. 1814-1819.

94. T. F. Ciszek, T. H. Wang, R. W. Burrows, X. Wu, J. Alleman, Y. S. Tsuo, and T. Bekkedahl, "Grain Boundary and Dislocation Effects on

the PV Performance of HighPurity Silicon," in: 23th IEEE Photovoltaic Specialists Conf. Record, Louisville, 1993 (IEEE, New York, 1993)

p. 101.

95. T. F. Ciszek, T. H. Wang, X. Wu, R. W. Burrows, J. Alleman, C. R. Schwerdtfeger, and T. Bekkedahl, "Si Thin Layer Growth from Metal

Solutions on SingleCrystal and Cast MetallurgicalGrade Multicrystalline Substrates," (Invited Plenary) in: 23th IEEE Photovoltaic Specialists

Conf. Record, Louisville, 1993 (IEEE, New York, 1993) p. 65.

96. Y.S. Tsuo, X. Wu, J.L. Alleman, X. Li, Y. Qu, T.F. Ciszek, R.E. Hollingsworth, and P.K. Bhat, "Solar Cell Structures Combining

Amorphous, Microcrystalline, and Single-Crystalline Silicon," in: 23th IEEE Photovoltaic Specialists Conf. Record, Louisville, 1993 (IEEE,

New York, 1993) p. 92.

97. T. F. Ciszek, "Electromagnetic and FloatZone Methods for HighPurity Silicon Solidification," in: Containerless Processing Techniques and

Applications,Eds. William F. Hofmeister and Robert Schiffman (The Minerals, Metals & Materials Society, Warrendale, PA, 1993) pp. 139-

146.

98. T.H. Wang, T.F. Ciszek, Y.S. Tsuo, J. Alleman, X. Wu, C.R. Schwerdtfeger, and R.W. Burrows "Liquid Phase Epitaxy for Thin-Layer

Silicon PV Devices" in: AIP Conference Proceedings No. 306, Eds. Rommel Noufi and Harin S. Ullal (American Inst. Of Physics, NewYork, 1994) pp. 92-99.

99. T.H. Wang, and T.F. Ciszek, Growth Kinetics Studies of Silicon LPE from Metal Solutions, in: 24th IEEE Photovoltaic Specialist Conf.

Record, Waikoloa, HI. Dec. 5-9, 1994. (IEEE, New Jersey, 1994) pp. 1250-1253.

100. Y.S. Tsuo, J.R. Pitts, M.D. Landry, C.E. Bingham, A. Lewandowski, and T.F. Ciszek, High-Flux Solar Furnace Processing of Silicon Solar

Cells, in: 24th IEEE Photovoltaic Specialist Conf. Record, Waikoloa, HI. Dec. 5-9, 1994. (IEEE, New Jersey, 1994) pp. 1307-1310.

101. T.F. Ciszek, T.H. Wang, R.W. Burrows, T. Bekkedahl, M.I. Symko, and J.D. Webb, Effect of Nitrogen Doping on Microdefects and

Minority Charge Carrier Lifetime of High-Purity, Dislocation-Free and Multicrystalline Silicon, in: 24th IEEE Photovoltaic Specialist Conf.Record, Waikoloa, HI. Dec. 5-9, 1994. (IEEE, New Jersey, 1994) pp. 1343-1346.

102. T.H. Wang, T.F. Ciszek, C.R. Schwertfeger, H. Moutinho, and R. Matson, Growth of silicon thin layers on cast MG-Si from metal solution

for solar cells, Solar Energy Mat. and Solar Cells 41/42, (1996) pp. 19-30.

103. Y.S. Tsuo, J.R. Pitts, M.D. Landry, P. Menna, C.E. Bingham, A. Lewandowski, and T.F. Ciszek, High-flux solar furnace processing of

silicon solar cells, Solar Energy Mat. and Solar Cells 41/42, (1996) pp. 41-51.

104. T.F. Ciszek, T.H. Wang, R.W. Burrows, T. Bekkedahl, M.I. Symko, and J.D. Webb, Effect of nitrogen doping on microdefects and

minority charge carrier lifetime of high-purity, dislocation-free and multicrystalline silicon, Solar Energy Mat. and Solar Cells 41/42, (1996)pp. 61-70.

105. T.H. Wang, T.F. Ciszek, and C.R. Schwerdtfeger, "Macroscopically Smooth Si Layer Growth by LPE on Cast Metallurgical-Grade Silicon

Substrates, AIP Conference Proceedings 353 (1996) pp. 503-510.

106. T.F. Ciszek Containerless Solidification of Silicon by High-Purity Electromagnetic Techniques, in: High Purity Silicon IV, Eds. C.L. Claeys,

P. Rai-Choudhury, P. Stallhofer, J.E. Maurtis (The Electrochemical Soc., New Jersey, 1996) pp. 76-85.

107. Y.S. Tsuo, P. Menna, J.R. Pitts, K.R. Jantzen, S.E. Asher, M.M. Al-Jassim, and T.F. Ciszek, Porous Silicon Gettering, in: 25th IEEE

Photovoltaic Specialist Conf. Record, Washington D.C., May 13-17, 1996 (IEEE, New Jersey, 1996) pp. 461-464.

108. P. Menna, Y.S. Tsuo, M.M. Al-Jassim, S.E. Asher, F.J. Pern, and T.F. Ciszek, Light-emitting Porous Silicon from Cast Metallurgical-grade



Silicon, J. Electrochem. Soc. 143 (1996) pp. L115-L117.

109. T.H. Wang, T.F. Ciszek, R. Reedy, S.Asher, and D. King, Surface Segregation as a Means of Gettering Cu in Liquid-Phase-Epitaxy Silicon

Thin Layers Grown From Al-Cu-Si Solutions, in: 25th IEEE Photovoltaic Specialist Conf. Record, Washington D.C. May 13-17, 1996

(IEEE, New Jersey, 1996) pp. 689-692.

110. T.F. Ciszek, T.H. Wang, R.K. Ahrenkiel, and R. Matson, Properties of Iron-Doped Multicrystalline Silicon Grown by the Float-Zone

Technique, in: 25th IEEE Photovoltaic Specialist Conf. Record, Washington D.C. May 13-17, 1996 (IEEE, New Jersey, 1996) pp. 737-

739.

111. T.H. Wang, T.F. Ciszek, and R.K. Ahrenkiel, Characterization of High-Purity Silicon with the Photoconductivity Decay and

Photoluminescence Analysis Techniques, in: High Purity Silicon IV, Eds. C.L. Claeys, P. Rai-Choudhury, P. Stallhofer, J.E. Maurtis (The

Electrochemical Soc., New Jersey, 1996) pp. 462-469.

112. T.F. Ciszek and J.M. Gee, Crystalline Silicon R&D at the U.S. National Center for Photovoltaics, in: Proc. 14th European Photovoltaic

Solar Energy Conference, Barcelona, Spain (1997) pp. 53-56.

113. T.F. Ciszek and T.H. Wang, Silicon Defect and Impurity Studies Using Controlled Samples, in: Proc. 14th European Photovoltaic Solar

Energy Conference, Barcelona, Spain (1997) pp. 396-399.

114. T.H. Wang and T.F. Ciszek, "Impurity segregation in LPE growth of silicon from Cu-Al solutions," Journal of Crystal Growth 174 (1997)

176-181.

115. James M. Gee, and Ted F. Ciszek, The Crystalline-Silicon Photovoltaic R&D Project At NREL And SNL, in: NREL/SNL Program

Review, Proceedings of the 14th Conference (AIP Press, Woodbury, NY, 1997) pp. 189-198.

116. Y.S. Tsuo, J.R. Pitts, P. Menna, M.D. Landry, J.M. Gee, and T.F. Ciszek, High-flux Solar Furnace Processing of Crystalline Silicon Solar

Cells, in: NREL/SNL Program Review, Proceedings of the 14th Conference (AIP Press, Woodbury, NY, 1997) pp. 751-758.

117. T.H. Wang and T.F. Ciszek, "Incorporation of Cu and Al in Thin Layer Silicon Grown from Cu-Al-Si, in: NREL/SNL Program Review,

Proceedings of the 14th Conference (AIP Press, Woodbury, NY, 1997) pp. 771-778.

118. M. Landry, Y.S. Tsuo, T.F. Ciszek, R. Roze, and D. Hoegh, Distributed Control and Process Monitoring for Photovoltaic Applications, in:

NREL/SNL Program Review, Proceedings of the 14th Conference (AIP Press, Woodbury, NY, 1997) pp. 787-794.

119. T.H. Wang and T.F. Ciszek, Numerical Simulations of Transient Photoconductance Decay, in: 26th IEEE Photovoltaic Specialist Conf.Record, Anaheim, CA, Sept. 29-Oct. 3, 1997 (IEEE, New Jersey, 1997) pp. 55-58.

120. T.F. Ciszek, T.H. Wang, W.A. Doolittle, and A. Rohatgi, Minority-Carrier Lifetime Degradation in Silicon Co-Doped with Iron andGallium, in: 26th IEEE Photovoltaic Specialist Conf. Record, Anaheim, CA, Sept. 29-Oct. 3, 1997 (IEEE, New Jersey, 1997) pp. 59-62.

121. T.F. Ciszek and T.H. Wang, Growth and Properties of Silicon Filaments for Photovoltaic Applications, in: 26th IEEE PhotovoltaicSpecialist Conf. Record, Anaheim, CA, Sept. 29-Oct. 3, 1997 (IEEE, New Jersey, 1997) pp. 103-106.

122. J.T. Moore, T.H. Wang, M.J. Heben, K. Douglas, and T.F. Ciszek, Fused-Salt Electrodeposition of Thin-Layer Silicon, in: 26th IEEEPhotovoltaic Specialist Conf. Record, Anaheim, CA, Sept. 29-Oct. 3, 1997 (IEEE, New Jersey, 1997) pp. 775-778.

123. Tihu Wang and Ted F. Ciszek, Effects of Sample Inhomogeneity and Geometry on Photoconductivity Decay, in Silicon Recombination

Lifetime Characterization Methods, ASTM STP 1340, D.C. Gupta, F. Bacher, and W.H. Hughes, Eds., American Society for TestingMaterials, pp. 88-98 (1998).

124. P. Menna, Y.S. Tsuo, M.M. Al-Jassim, S.E. Asher, R. Matson, and T.F. Ciszek, Purification of Metallurgical-Grade Silicon by Porous-Silicon Etching, in: Proc. 15th European Photovoltaic Solar Energy Conference, Vienna, Austria (1998) Vol. II: pp. 1232-1235.

125. T.F. Ciszek and T.H. Wang, Float-zone Pedestal Growth of Thin Silicon Filaments, in: High Purity Silicon V, Eds. C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson (The Electrochemical Soc., Proceedings Volume 98-13, New Jersey, 1998) pp.85-89.

126. T.F. Ciszek, T.H. Wang, W.A. Doolittle, and A. Rohatgi, Iron-Gallium Pair Defects in Float-Zoned Silicon, in: High Purity Silicon V, Eds.C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson (The Electrochemical Soc., Proceedings Volume 98-13, New

Jersey, 1998) pp. 230-240.

127. T.H. Wang, T.F. Ciszek, M. Landry, A. Matthaus, and G. Mihalik, A Silicon Ingot Lifetime Tester for Industrial Use, in: NCPV

Photovoltaics Program Review, Proceedings of the 15th Conference, Eds. M. Al-Jassim, J.P. Thorton, and J.M. Gee, Denver, CO, Sept. 8-

11, 1998 (AIP Press, Woodbury, NY, 1999) pp. 443-452.

128. Y.S. Tsuo, P. Menna, T.H. Wang, and T.F. Ciszek, New Opportunities in Crystalline Silicon R&D, in: NCPV Photovoltaics Program

Review, Proceedings of the 15th Conference, Eds. M. Al-Jassim, J.P. Thorton, and J.M. Gee, Denver, CO, Sept. 8-11, 1998 (AIP Press,Woodbury, NY, 1999) pp. 453-458.

129. H.A. Atwater, B. Sopori, T. Ciszek, L.C. Feldman, J. Gee, and A. Rohatgi, Research Opportunities in Crystalline Silicon Photovoltaics for

the 21st Century, in: Photovoltaics for the 21st Century, Eds. V.K. Kapur, R.D. McConnell, D. Carlson, G.P. Ceasar and A. Roghatgi(The Electrochemical Society Proceedings Volume 99-11, 1999), pp. 206-218.

130. Y.S. Tsuo, T.H. Wang, and T.F. Ciszek, Crystalline-Silicon Solar Cells for the 21st Century, in: Photovoltaics for the 21st Century, Eds.V.K. Kapur, R.D. McConnell, D. Carlson, G.P. Ceasar and A. Roghatgi (The Electrochemical Society Proceedings Volume 99-11, 1999),pp. 49-56.



131. T.F. Ciszek, T.H. Wang, M. Landry, A. Matthaus, and G. Mihalik, A Silicon Ingot Lifetime Tester for Large Crystals, in: Analytical andDiagnostic Techniques for Semiconductor Materials, Devices, and Processes, B.O. Kolbesen, et. al. Eds., (The Electrochemical Society

Proceedings Volume 99-16, 1999) pp. 365-373.

132. T.H. Wang and T.F. Ciszek, Growth of Large-Grain Silicon Layers by Atmospheric Iodine Vapor Transport, J. of the Electrochem. Soc,

147 (5) (2000) pp. 1945-1949.

133. D.S. Ruby, T.F. Ciszek, and B.L. Sopori, Research Needs of c-Si Technology Required to Meet Roadmap Milestones, Program and

Proceedings of NCPV Program Review Meeting 2000, April 2000, Denver, NREL/BK-520-28064, pp.27-28.

134. Y. Yan, M. M. Al-Jassim, T. H. Wang, and T. F. Ciszek, Structure and Effects of Extended Defects in Polycrystalline Si Thin Films,Program and Proceedings of NCPV Program Review Meeting 2000, April 2000, Denver, NREL/BK-520-28064, pp.193-194.

135. T.F. Ciszek, T.H. Wang, M. Page, J. Casey, R. Bauer, and E. Good, Crystalline Silicon Materials Research, Program and Proceedings ofNCPV Program Review Meeting 2000, April 2000, Denver, NREL/BK-520-28064, pp.179-180.

136. T.H. Wang, T.F. Ciszek, M. Page, Y. Yan, R. Bauer, Q. Wang, J. Casey, R. Reedy, R. Matson, R. Ahrenkiel, and M. M. Al-Jassim,Material Properties of Poly-Silicon Layers deposited by Atmospheric Pressure Iodine Vapor Transport, Conf. Record of the 28th IEEE

PVSC, September 2000, Anchorage, p.138-141.

137. T.H. Wang, T.F. Ciszek, and Y. Zhang, Calibration Factors for Lifetime Measurements on Si Ingots with a Localized PCD Method, Conf.Record of the 28th IEEE PVSC, September 2000, Anchorage, p.383-386.

138. T. F. Ciszek and T.H. Wang, "Silicon Float-Zone Crystal Growth as a Tool for the Study of Defects and Impurities," invited presentation, 6thInternational Symposium on High-Purity Silicon (held in conjunction with the 198th meeting of the Electrochemical Society), Phoenix, Arizona,

October 22-27, 2000). Published in: HIGH PURITY SILICON VI, Eds. C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, andH.J. Dawson (Electrochemical Society, Pennington, NJ, 2000) pp. 105-117.

139. T. F. Ciszek, M. R. Page, T. H. Wang, and J. A. Casey, Crystal Growth and PV Devices Using a New Si Feedstock Source, 11th

Workshop on Crystalline Silicon Solar Cell Materials and Processes, August 19-22, 2001, Estes Park, CO, NREL/BK-520-30838, pp.146-149.

140. T. F. Ciszek, T. H. Wang, M. R. Page, P. Menna, R. E. Bauer, E. A. Good, and J. A. Casey, Novel Methods for Purifying Metallurgical-

Grade Silicon, 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, August 19-22, 2001, Estes Park, CO, NREL/BK-

520-30838, pp. 150-154.

141. T.H. Wang, T.F. Ciszek, M.R. Page, R.E. Bauer, and M.D. Landry, Thin Layer Si Growth by Atmospheric Pressure Iodine Vapor

Transport, 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, August 19-22, 2001, Estes Park, CO, NREL/BK-

520-30838, pp. 155-158.

142. Chandra P. Khattak, David B. Joyce, Frederick Schmid, Ted F. Ciszek, Matthew R. Page, and Martha I. Symko-Davies, Solar-Grade

Silicon for Solar Cell Applications, to be published in Proc. 17th Euro. PVSEC, Munich, Oct. 22-26, 2001.

143. T.F. Ciszek, T.H. Wang, M.R. Page, P. Menna, R.E. Bauer, E.A. Good, and M.D. Landry, Alternative Solar-Grade Silicon FeedstockApproaches, Proc. NCPV Prog. Rev. Mtg, Lakewood, CO, Oct. 14-17, 2001, pp. 295-296.

144. A. Karoui, G. A. Rozgonyi, R. Zhang, and T. Ciszek, Silicon Crystal Growth and Wafer Processing for High Efficiency Solar Cells and HighMechanical Yield, Proc. NCPV Prog. Rev. Mtg, Lakewood, CO, Oct. 14-17, 2001, pp.157-158.

145. Ijaz Jafri, Mohan Chandra, HuiZhang, Vish Prasad, Chandra Reddy, Carmela Amato-Wierda, Marc Landry, and Ted Ciszek EnhancedBulk Polysilicon Production Using Silicon Tubes, J. of Crystal Growth 225 (2001) pp. 330-334.

146. T.H. Wang, T.F. Ciszek, M.R. Page, R.E. Bauer, M.D. Landry, Q. Wang, and Y.F. Yan, Atmospheric Pressure Iodine Vapor Transport for

Thin-Silicon Growth, Proc. NCPV Prog. Rev. Mtg, Lakewood, CO, Oct. 14-17, 2001, pp.155-156.

147. T.H. Wang, T.F. Ciszek, M.R. Page, R.E. Bauer, Q. Wang, and M.D. Landry, APIVT-Grown Silicon Thin Layers and PV Devices, in:

29th IEEE Photovoltaic Specialist Conf. Record, New Orleans, LA, May 2002 (IEEE, New Jersey, 2002) pp. 94-97.

148. T.H. Wang, M.R. Page, and T.F. Ciszek, Two-Dimensional Simulations of Thin-Silicon Solar Cells, Proc. 12th WS on C-Si Matls. andProcesses, NREL/BK-520-32717, Breckenridge, CO, Aug. 11-14, 2002, pp. 299-302.

149. C. Wang, H. Zhang, T. Wang, and T. Ciszek, Simulation of Heat Transfer and Kinetics of a CZ Silicon Crystal Growth System, to bepublished in Proc. of 2002 ASME Intl Mech. Eng. Cong. and Expo., Nov., 2002, New Orleans, Louisiana.

150. T.F. Ciszek and T.H. Wang, Silicon Defect and Impurity Studies Using Float-Zone Crystal Growth as a Tool, J. of Crystal Growth, 237-239 (P3) (2002) pp. 1685-1691.

151. E. A. Good, T.H. Wang, T.F. Ciszek, R.H. Frost, M.R. Page, and M.D. Landry, Partitioning Effects in Recrystallization of Silicon from

Silicon-Metal Solutions, Proc. 12th WS on C-Si Matls. and Processes, NREL/BK-520-32717, Breckenridge, CO, Aug. 11-14, 2002, pp.236-239.

152. A. Karoui, R. Zhang, G.A. Rozgonyi, and T. F. Ciszek, Effects of Dislocations on Minority Carrier Lifetime in Dislocated Float Zone Silicon,

Proc. 12th WS on C-Si Matls. and Processes, NREL/BK-520-32717, Breckenridge, CO, Aug. 11-14, 2002, pp. 232-235.

153. T.F. Ciszek, M.R. Page, T.H. Wang, and J.A. Casey, Float-zone and Czochralski Crystal Growth and Diagnostic Solar Cell Evaluation of a

New Solar-Grade Feedstock Source, in: 29th IEEE Photovoltaic Specialist Conf. Record, New Orleans, LA, May 2002 (IEEE, NewJersey, 2002) pp. 210-213.



154. T.F. Ciszek, T.H. Wang, M.R. Page, R.E. Bauer, and M.D. Landry, Solar-Grade Silicon from Metallurgical-Grade Silicon via Iodine

Chemical Vapor Transport Purification, in: 29th IEEE Photovoltaic Specialist Conf. Record, New Orleans, LA, May 2002 (IEEE, NewJersey, 2002) pp. 206-209.

155. J. Nickerson, L. Mandrell, T.H. Wang, and T.F. Ciszek, A Determination of the Key Sources of Variation Affecting Ingot Lifetime, in: 29th

IEEE Photovoltaic Specialist Conf. Record, New Orleans, LA, May 2002 (IEEE, New Jersey, 2002) pp. 368-370.

156. T.F. Ciszek, Silicon Crystal Growth for Photovoltaics, in: Crystal Growth Technology, Eds. H. J. Scheel and T. Fukuda (John Wiley andSons, Ltd., Sussex, U.K., 2003) pp 267-289.

157. T. Buonassisi, M. Heuer, O. F. Vyvenko, A. A. Istratov, E. R. Weber, Z. Cai, B. Lai, T. F. Ciszek and R. Schindler, "Applications of

synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon withextended defects," Physica B: Condensed Matter, Vol. 340-342 (2003) pp. 1137-1141.

158. T. H. Wang, M. R. Page, R. E. Bauer, T. F. Ciszek, M.D. Landry, Q.Wang, Passivation and Compatible Device Processing of APIVT-SiThin Layers, Kurokawa, K., et al., eds, Proceedings of 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint

Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar EnergyConference; 11-18 May 2003, Osaka, Japan; WCPEC-3 Organizing Committee Vol. B: pp. 1407-1410.

159. T.H. Wang, Q.Wang, M.R. Page, R.E.Bauer, and T.F. Ciszek, Hydrogen Passivation and Junction Formation on APIVT-Deposited Thin-Layer Silicon by Hot-Wire CVD, Thin Solid Films. Vol. 430 (2003) pp. 261-264.

160. T.H. Wang, P.E. Sims, M.R. Page, R.E. Bauer, M.D. Landry, R. Reedy, Y. Yan, and T. F. Ciszek, APIVT Expitaxial Growth on Zone-Melt

Recrystallized Silicon, 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers from theworkshop held 10-13 August 2003, Vail, Colorado. NREL/BK-520-34443, pp. 130-133.

161. C. Wang, H. Zhang, T.H. Wang and T.F. Ciszek, A Continuous Czochralski Silicon Crystal Growth System, J. Crystal Growth. 250(2003) pp. 209-214.

162. T.F. Ciszek, Solid-Source Boron Doping of Float-Zoned Silicon, J. of Crystal Growth 264 (2004) pp. 116-122.

163. T. Buonassisi, M. A. Marcus, A. A. Istratov, M. Heuer, T. F. Ciszek, B. Lai, Z. Cai, and E. R. Weber, Distribution and chemical state of Cu-rich clusters in silicon, Proc. 14th workshop on crystalline silicon solar cell materials and processes, Winter Park, CO, (2004) pp.161-

164 .

164. A. A. Istratov, T. Buonassisi, M. A. Marcus, T. F. Ciszek, and E. R. Weber, Dependence of precipitation behavior of Cu and Ni in CZ and

multicrystalline silicon on cooling conditions, Proc. 14th workshop on crystalline silicon solar cell materials and processes, NREL, WinterPark, CO (2004) pp.165-169 .

165. A. Karoui, T. Buonassisi, F. Sahtout Karoui, G. A. Rozgony, M. C. Martin, E. R. Weber, T. F. Ciszek, Stress-induced nitrogen and oxygensegregation and complexing investigated by high resolution synchrotron FTIR, Proc. 14th workshop on crystalline silicon solar cellmaterials and processes, NREL, Winter Park, CO(2004), pp.204-207.

166. T. Buonassisi, A. A. Istratov, T. F. Ciszek, D. W. Cunningham, A. M. Gabor, R. Jonczyk, R. Schindler, M. Sheoran, A. Upadhyaya, A.Rohatgi, B. Lai, Z. Cai, M. A. Marcus, and E. R. Weber, Differences and similarities between metal clusters in mc-Si materials from different

manufacturers, Proc. 14th workshop on crystalline silicon solar cell materials and processes, NREL, Winter Park, CO (2004) pp.226-229.

167. Tonio Buonassisi, Matthew A. Marcus, Andrei A. Istratov, Matthias Heuer, Theodore F. Ciszek, Barry Lai, Zhonghou Cai, and Eicke R.Weber, Analysis of Copper-rich Preciptiates in Silicon: Chemical State, Gettering, and Impact on Multicrystalline Silicon Solar Cell Material,

J. Appl.Phys. 97, 063503 (2005) (9 pages).

168. T.F. Ciszek, Photovoltaic Silicon Crystal Growth, in: Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials, Ed.Peter Capper (John Wiley and Sons, Ltd., Sussex, U.K., 2005) pp 451-476.

169. T. Buonassisi, A.A. Istratov, M.A. Marcus, S. Peters, C. Ballif, M. Heuer, T.F. Ciszek, Z. Cai, B. Lai, R. Schindler, and E.R. Weber.Synchrotron-based investigations into metallic impurity distribution and defect engineering in multicrystalline silicon via thermal treatments,

Proc. 31st IEEE Photovoltaic Specialists Conference (Lake Buena Vista, USA) (2005) pp.1027-1030 .

170. T. Buonassisi, M. D. Pickett, M. A. Marcus, A. A. Istratov, G. Hahn, T. F. Ciszek, S. Riepe, J. Isenberg, W. Warta, R. Schindler, and E. R.

Weber, Quantifying the recombination activity of metal precipitates in multicrystalline silicon using synchrotron-based spectrally-resolved X-ray beam induced current, Appl. Phys. Lett. 87, 044101 (2005) (3 pages).

171. T.H. Wang, M.R. Page, T.F. Ciszek, M.F. Tamendarov, and B.N. Mukashev, New Approaches to Solar-Grade Silicon Feedstock and

Silane Productions, Proc. 15th WS on C-Si Matls. and Processes, Vail, CO, Aug. 7-10, 2005, (NREL/BK-520-38573, November, 2005)pp. 109-112.

172. T. Buonassisi, A.A. Istratov, M.D. Pickett, M.A. Marcus, G. Hahn, S. Riepe, J. Isenberg, W. Warta, G. Willeke, T. F. Ciszek, and E.R.Weber, Synchrotron-based spectrally-resolved X-ray beam induced current: a technique to quantify the effect of metal-rich precipitates on

minority carrier diffusion length in multicrystalline silicon, Proc. 15th WS on C-Si Matls. and Processes, Vail, CO, Aug. 7-10, 2005

(NREL/BK-520-38573, November, 2005) pp 141-145.

173. T. Buonassisi, A. A. Istratov, M. D. Pickett, M. Heuer, J. P. Kalejs, G. Hahn, M. A. Marcus, B. Lai, Z. Cai, S. M. Heald, T. F. Ciszek, R. F.

Clark, D. W. Cunningham, A. M. Gabor, R. Jonczyk, S. Narayanan, E. Sauar, and E. R. Weber, Chemical Natures and Distributions ofMetal Impurities in Multicrystalline Silicon Materials, Prog. Photovolt: Res. Appl. 14 (2006) pp. 513-531.

174. T. Buonassisi, A.A. Istratov, M.D. Pickett, M.A. Marcus, T. F. Ciszek, and E.R. Weber, Metal Precipitation at Grain Boundaries in Silicon:

Dependence on Grain Boundary Character and Dislocation Decoration, Appl. Phys. Lett. 89, 042102 (2006).



175. T.F. Ciszek, Growth of Alkaline-Earth Vanadate Garnet by Synthetic Contact Metamorphism with Molten V2O5-Na2SiO3 Acting on

Dolomite, J. Crystal Growth 287 (2006) pp. 323-325.

176. T.F. Ciszek, Shape-Shifting Silicon Feedstock, Proc. 16th WS on C-Si Matls. and Processes, Denver, CO, Aug. 6-9, 2006, pp. 185-188.

177. T.F. Ciszek, Silicon Shot Solidification in Water, J. Crystal Growth 310 (2008) pp. 2198-2203.

178. Mohan Narayanan and Ted Ciszek (Book Chapter), "Silicon Solar Cells: Materials, Devices, and Manufacturing," in: Springer Handbook ofCrystal Growth, Eds. G. Dhanaraj, K. Byrappa, V. Prasad, an M. Dudley (SpringerVerlag, Berlin, 2010) pp. 1701-1718.

179. T.F. Ciszek, "Photovoltaic materials and crystal growth research and development in the gigawatt era," J. Crystal Growth, vol. 393, pp. 2-6,2014. Click for reprint

180. T.F. Ciszek and Hugh E. Gotts, "Cold-Container Crystal Growth of "Last-to-Freeze" Silicon Samples, and Enhanced Detection of Metallic

Impurities by ICP-MS," to be published in: 40th IEEE Photovoltaic Specialist Conf. Record, Denver, CO, (IEEE, New Jersey, 2014). Clickfor preprint

181. T.F. Ciszek, "Residual Dopant Levels in Silicon Feedstock Grown by Pilot-Scale Atmospheric Pressure Iodine Vapor Transport," to be

published in: 40th IEEE Photovoltaic Specialist Conf. Record, Denver, CO, (IEEE, New Jersey, 2014). Click for preprint

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