terrestrial and space radiation effects on sic power...
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Terrestrial and Space Radiation
Effects on SiC Power Devices
Akin Akturk, James McGarrity, Neil Goldsman,
Zeynep Dilli, Mitch Gross, Adam Markowski
Partially supported by NASA, PowerAmerica, ARL
Thank you
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Terrestrial and Space RadiationCommon knowledge:
I did not know there is any
radiation at the sea-level!
Terrestrial Qualification requires:
Terrestrial neutron radiation testsThere are only two “true” terrestrial neutron
simulators in the World: One of them is in the US, at
Los Alamos.
Common knowledge:
Solar flares, aurora borealis, etc.
Satellites are up there so it must
not be bad!
Space Qualification requires:
Ionizing dose radiation tests
Heavy ion radiation testsAnd sometimes proton and electron radiation tests
since they are the most abundant.
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Terrestrial Radiation
~ G
rou
nd
leve
l
~ 2
0km
= ~
65000 fe
et
[1] J.W. Wilson et al., “Overview of atmospheric ionizing radiation” published by NASA
[1] Calculated particle flux at 50° geomagnetic latitude.
~ 3
00
00
feet
Concern: Terrestrial neutrons are relatively abundant,
can have high energies and interact with lattice atoms.
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Neutron Interactions
[1]
[1]
Possible knock-ons include Si and C withenergies as high as 15 MeV.
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Los Alamos Terrestrial Neutron Simulator
http://wnr.lanl.gov/_assets/flight_paths/flight_paths.php
Best terrestrial neutron simulator. There is only one such simulator in the US.
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Terrestrial Neutron Tests
Exp: Track/record drain voltage on each device
Exp: Track/record neutron fluence
Exp: Continue until all devices fail or enough time/fluence
reached
Pre Exp: Pre-electrical characterization
Pre Exp: Design and fabricate test boards
Post Exp: Calculate and plot FIT curves
Post Exp: Post-electrical characterization of survived parts
Post Exp: Post failure analysis
Exp: Track/record fast current transients for some devices
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Failure In Time Curves of Si and SiC Parts
SiC has lower FITs at rated voltage compared to similarly rated Si
FIT : Failure in one billion device hours
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Neutron Induced Failures: How to ImproveCritical Charge for Failure
A- Correlate damage location
with vulnerable device areas
B- Failure initiating transients provide
clues regarding the nature of failure
Harden against neutrons
C- Simulate devices
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Space Radiation: 1- Heavy Ions
Example Galactic Cosmic Ray (GCR) and Solar Particle Event (SPE) spectra
[C. Poivey, “Radiation Hardness Assurance for Space Systems” report,
http://radhome.gsfc.nasa.gov/radhome/papers/nsrec02_sc_poivey.pdf]
https://www.gsi.de/work/forschung/biophysik/forschungsfelder/space_radiation_physics.htm
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Heavy Ion Tests
Heavy ion testing at TAMU
Xenon with the 15 MeV/amu tune
Fluence in the 103-105 ions/cm2 range
Flux ≈ 10 – 103 ions/cm2s
Pre and Post Tests
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Heavy Ion Induced TransientsA recovered heavy ion induced transient
Recovery does not mean absence of latent damage
Heavy Ion Test Summary:
- At high voltages, SiC power MOSFETs
immediately fail with a single strike (x >500V)
- At medium voltages, SiC power MOSFETs fail
post radiation due to latent gate damage
(150V< x <500V)
- At very low voltages, they do survive (x <150V)
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Example Heavy Ion Test Data
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Example Heavy Ion Test Data
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Heavy Ion Fast Transients
1000V VDS
-0.1V VGS
900V VDS
0V VGS
800V VDS
-0.1V VGS
800V VDS
-10V VGS
We can determine failure
mode to improve radiation
response / hardness
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Space Radiation: 2- Total Ionizing Dose1- Positive charging of the oxide due to ionizing dose
radiation (gamma, x-ray, e-beam etc.)
2- Increases in interface state densities over time
Most commonly used source for TID testing is Co60
T. R. Oldham and F. B. McLean, IEEE TNS,
50(3,3), 483-499, (2003)We are experts in pursuing TID experiments to measure bulk
trap densities.
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Gen1 - Co60 Results
ΔVTH = -3.8×10-8×D (rads )×Tox2 (nm2) if all holes trap at the interface and all
electrons are swept out
<5 % hole trapping
Excellent result for an unhardened thick oxide
Gen1
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Gen3 - Co60 and X-ray Results
VGS = -20V
VGS = 20V
Co60
VGS = 20V
Co60
160keV Xray
- Co60 experiments were pursued at the Penn State
Breazeale Nuclear Reactor facility using a gamma cell
- X-ray experiments were pursued at Prairie View A&M
Gen3
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Summary
• SiC power MOSFETs exhibit excellent terrestrial neutron and ionizing dose
radiation response; however, their heavy ion response needs to be improved
significantly for their potential use in space applications
• Similar trends have been observed for SiC power diodes as well
• Each and every SiC power device needs to be tested for terrestrial neutrons
for commercial applications, and additional tests are required for space
applications
• CoolCAD can perform terrestrial neutron, heavy ion, gamma, x-ray, e-beam,
proton, and various other radiation tests for qualification and characterization
• Besides qualification, these tests can provide device design and process
information, not otherwise measurable by electrical means
• CoolCAD low power SiC components fare well under heavy ion, gamma and
x-ray exposure due to preliminary tests