the egan fet journey continues in space€¦ · epc - the leader in egan® fets | march 2012 |...

EPC - The Leader in eGaN® FETs | March 2012 | GOMAC Tech

1 www.epc-co.com The eGaN® FET Journey Continues in Space


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Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FET Characteristics

Alexander Lidow Chief Executive Officer Efficient Power Conversion


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Agenda

• Device Structure • SEE Results • Total Dose Results • In Circuit Results • What’s in the Future? • Conclusions


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Dielectric

GaN - - - - - - - - - - - - - - -

Si

AlGaN Electron Generating Layer

Aluminum Nitride Isolation Layer

D G S - - - -

eGaN® FET Structure

Two Dimensional Electron Gas (2DEG)


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SEM of an eGaN® FET


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SEE Results


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SEE Results - 2010

MIL-STD-750E, METHOD 1080

0

50

100

150

200

250

200 V FETs 150 V FETs 100 V FETs 60 V FETs 40 V FETs

Volt

age

SEE Heavy Ion Testing - Au

Fail

Out of Spec

Undamaged



SEE Failures

GaN

M3

M2 M1

Silicon

The SEGR failure site of a first-generation 200 V eGaN FET occurred between metal layers and was caused by the inductance of long gate and source leads that allowed the gate-source voltage to exceed maximum limits.



SEE Results - 2011


0

50

100

150

200

250

200 V Gen 1 FETs 200 V Gen 2 FETs

Volt

age

SEE Heavy Ion Testing - Au

Fail

Out of Spec

Undamaged


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Total Dose Results



Total Dose Results – 40V

MIL-STD-750E, METHOD 1019 .700

.900

1.100

1.300

1.500

1.700

1.900

2.100

2.300

2.500

0.E+00 5.E+05 1.E+06

Thre

shol

d Vo

ltage

(V)

Radiation Dose

EPC1015 Threshold Voltage

VTH after VDS

VTH after VDS

VTH after VDS

VTH after VGS

VTH after VGS

VTH after VGS

1

10

100

1000

0.E+00 5.E+05 1.E+06

Leak

age

Curr

ent (

mic

ro A

mpe

res)

Radiation Dose

EPC1015 Gate and Drain-Source Leakage Current

IGSS after VDS

IGSS after VDS

IGSS after VDS

IDSS after VDS

IDSS after VDS

IDSS after VDS

IGSS after VGS

IGSS after VGS

IGSS after VGS

IDSS after VGS

IDSS after VGS

IDSS after VGS



.700

.900

1.100

1.300

1.500

1.700

1.900

2.100

2.300

2.500

0.E+00 5.E+05 1.E+06

Thre

shol

d Vo

ltage

(V)

Radiation Dose


VTH after VGS

VTH after VGS

VTH after VDS

VTH after VDS

Total Dose Results – 100 V


1

10

100

1000

0.E+00 5.E+05 1.E+06Leak

age

Curr

ent (

mic

ro A

mpe

res)

Radiation Dose


IGSS after VGS

IDSS after VGS

IGSS after VGS

IDSS after VGS

IGSS after VDS

IDSS after VDS

IGSS after VDS

IDSS after VDS



.700

.900

1.100

1.300

1.500

1.700

1.900

2.100

2.300

2.500

0.E+00 5.E+05 1.E+06

Thre

shol

d Vo

ltage

(V)

Radiation Dose


VTH after VDS

VTH after VDS

VTH after VDS

VTH after VGS

VTH after VGS

VTH after VGS

Total Dose Results - 200 V


1

10

100

1000

0.00E+00 5.00E+05 1.00E+06

Leak

age

Curr

ent (

mic

ro A

mpe

res)

Radiation Dose


IGSS after VDS

IGSS after VDS

IGSS after VDS

IDSS after VDS

IDSS after VDS

IDSS after VDS

IGSS after VGS

IGSS after VGS

IGSS after VGS

IDSS after VGS

IDSS after VGS

IDSS after VGS


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In-Circuit Testing


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Rated Voltage DC Current Peak Current RDS(ON) (mΩ) QG FOM (QG x RDS(ON)) Die DIM (mils2) Package DIM (mils2)

MGN 2915 40 33 150 4 11.6 2.7 10,530 10,530 IRHNA57Z60 30 45 300 4 200 40 66,049 362,250 MGN2901 100 25 100 7 10.5 2.7 10,530 10,530 IRHNA67160 100 56 224 10 170 80 66,049 362,250 MGN2910 200 12 40 25 7.5 2.6 9,165 9,165 IRHNA67260 200 56 224 28 240 60 66,049 362,250

10

100

1000

10000

0 50 100 150 200

Figu

re o

f Mer

rit

Rated Voltage

IR RAD HARD eGaN FET

Rad Hard Figure of Merit

5-7x Die Size Reduction

20x - 40x FOM Improvement

30x – 40x Package Size

Reduction


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45%

50%

55%

60%

65%

70%

75%

80%

85%

90%

95%

0 2 4 6 8 10 12

Effi

cien

cy

Output Current

eGaN 1.5 V

eGaN 2.5 V

eGaN 3.3 V

IR 1.8 V

IR 2.5 V

IR 3.3 V

POL Efficiency Comparison

500 kHz 12 VIN

eGaN FETs = 92.5%

Rad Hard MOSFETs = 84%


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Parallel FET Buck Converter

Efficiency at 1 MHz 12 VIN – 1.2 VOUT

State-of-the-Art Commercial MOSFETs


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What’s in the Future?


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47

25

100

250400

1.00

10.00

100.00

1000.00

0 200 400 600 800 1000 1200 1400

Rat

ed R

DS(

ON

)m

Ω

Rated VDSS(MAX)

2009

2011

2012

Beyond 600 Volts

200 mΩ

400 mΩ 250 mΩ

LGA Package


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Full-Bridge with Driver and Level Shift

Discrete eGaN FET with Driver

Driver On Board

eGaN

Beyond Discrete Devices


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• eGaN FETs have exceptional Heavy Ion hardness

• eGaN FETs have performed exceptionally well when submitted for Total Ionizing Dose (60Co) up to1MRad and beyond

• eGaN FETs have demonstrated extraordinary efficiency

in a high frequency point-of-load converter • Future integration of driver and control functions can

significantly improve system radiation tolerance.

Conclusions


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The end of the road for silicon….. …is the beginning of the eGaN FET journey!

the egan fet journey continues in space€¦ · epc - the leader in egan® fets | march 2012 |...

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