the institute for crystal growth (ikz) in berlin-adlershof ... · institute for crystal growth –...
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Institute for Crystal Growth – Berlin member of the
The Institute for Crystal Growth (IKZ) in Berlin-Adlershof
Main Working Fields and Participation in GERDA
1. About IKZ
2. Projects of the silicon- germanium group:
- Floating Zone (FZ) Silicon
- Monoisotopic Silicon (AVOGADRO)
- SixGe1-x
3. Germanium crystal growth, GERDA activities
Helge Riemann, Nikolai Abrosimov
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Institute for Crystal Growth – Berlin member of the
The Institute for Crystal Growth in Berlin-Adlershof
Founded in 1992, with scientific and technical staff from the Academy
of Sciences of GDR and from Humboldt University
IKZ is a member of the Leibniz association
Research & service function
Present staff: 95 (45 scientists, 11 PhD students, 31 technicians, 8 others)
Budget 2007: institutional 7.1 M Euro, external projects 2.1 M Euro
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Institute for Crystal Growth – Berlin member of the
Physics Chemistry
Humboldt-Univ.(HUB)
Erwin-Schrödinger-
Zentrum (Library)
BESSY II
Adlershof – City of Science, Trade and Media
Mathematics
Informatics
Institute for
Crystal Growth
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Institute for Crystal Growth – Berlin member of the
IKZ-Structure
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Institute for Crystal Growth – Berlin member of the
Institute for Crystal Growth (IKZ)
Three main material categories:
Elemental
semiconductors
Compound
semiconductors
Dielectric
crystals
6“ GaAs
6“ FZ Si
2“ LiAlO2
1.5“ Cr:LiCaAlF6
Ge and GeSi
20 mm AlN
materials
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Institute for Crystal Growth – Berlin member of the
Crystal Dimensions
Bulk Crystals
& Fibers Epitaxial layers
Nano-crystals
2“ SiC single crystal SiGe pyramids25 m thick 4H-SiC-layer
Cr:Al2O3 Fiber
dm/cm μm nmCrystal dimensions
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Institute for Crystal Growth – Berlin member of the
Institute for Crystal Growth
Available growth techniques:
Melt
-Czochralski pullers (high / low-pressure)
-Floating-zone furnaces (RF and laser heating)
-Vertical gradient freeze
-Micro-pulling down
Gas phase
-Physical vapour deposition (PVT)
-Chemical vapour deposition (CVD)
-MO Chemical vapour deposition (MO-CVD)
-(U)HV evaporation
Solution -Liquid phase epitaxy
-Hydrothermal autoclaves
-Vapour-Liquid-Solid
-Top-seeded solution growth (TSSG)
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Institute for Crystal Growth – Berlin member of the
Electron Paramagnetic Resonance
Electrical measurements (Resistivity and Hall, DLTS, Photoconductivity)Optical measurements (Photolumin., Reflectivity, Absorption, Raman, Scanningphotovoltage, elipsometry)
X-Ray diffr., X-Ray topography, Powder diffr.
SEM, Cathodolumin., EBIC, FIB, EDX
AFM
Chemical etching + optical microscopy
Laser scattering tomographyStrain determination via polaroscopy
Mass spectroscopy (ICP-OES, RF-OES), DTA, TGA
Characterisation techniques:
Sample Processing laboratory:
Crystal orientation
ID-Blade and Wire sawing
Lapping machines
Polishing machines
Surface inspections
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Institute for Crystal Growth – Berlin member of the
Institut für Kristallzüchtung
Wissenschaftsgemeinschaft Gottfried Wilhelm Leibniz
Silicon Floating Zone Crystal Growth
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Institute for Crystal Growth – Berlin member of the
Floate Zone Crystal Pullers
- three FZ- machines for crystals with
diameters of up to 125mm,
- one FZ- machine for 150mm (3 bar)
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Institute for Crystal Growth – Berlin member of the
Dislocation-free Si FZ crystal with quadratic cross section
Crystal support
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Institute for Crystal Growth – Berlin member of the
100mm
Quadratic FZ- silicon for high efficiency PV
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Institute for Crystal Growth – Berlin member of the
Common Silicon Crystal Growth Methods
Czochralski(CZ)-Growth from crucible
floating zone(FZ) growth (crucible-free )
pedestal growth (crucible-free)
Non regarding other quality parameters, dislocation-free silicon crystals
will grow if the pulling machine enables the essential growth conditions
and if the polycrystalline Si feed material has a dense, pore-less structure
and meets upper impurity limits markedly below solid solubility and
depending on the distribution coefficients , e.g.:
C< 1016cm-3(k=0,07), O< 1017cm-3, all others < 1013cm-3...1015cm-3
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Institute for Crystal Growth – Berlin member of the
Silicon-Germanium mixed crystal growth
-variable lattice constant
-Si- and Ge-rich crystals
-constitutional supercooling by segregation of Ge at growing interphase
-between ca.12% and 80% Si crystal growth practically impossible
-Czochralski technique is mainly used, FZ difficult but possible
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Institute for Crystal Growth – Berlin member of the
equipment
2 Czochralski furnaces
for SiGe and GeSi
crucible charge 1,5kg
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Institute for Crystal Growth – Berlin member of the
Czochralski growth of GeSi single crystals
feeding rods
before and after growth
process
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Institute for Crystal Growth – Berlin member of the
Si1-xGex gradient crystals
0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9
0
2
4
6
8
10
12
SiGe 39.27
SiGe 38.26
calculated
0.8% Ge
2% Ge
g = crystallised fraction
Ge c
oncentr
ation (
%)
Curveddiffractingplanes
CGe = kC0,Ge (1 - g)k-1
Ge c
once
ntra
tion
Growth of a Si1-x Gex ingot
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Institute for Crystal Growth – Berlin member of the
Bragg‘s law :
2 d sin =
for gradient crystals
2 d (1 + d/d) sin ( - ) =
optimized Gradient
a=( d/d)/L=cos 0/R
SiGe gradient crystal as monochromator for X-rays
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Institute for Crystal Growth – Berlin member of the
Principle of a Laue lens
rays from sourcesat infinityFocus: detector
Diffracting elements: crystals
Bragg's law: 2 dhkl sin B = n
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Institute for Crystal Growth – Berlin member of the
CLAIRE : First Light for a Crystal Diffraction Lens
CLAIRE : First Light for a Crystal Diffraction Lens
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Institute for Crystal Growth – Berlin member of the
CLAIRE 2001
Launch : 14 june 2001, 8h15 UT, CNES balloon base, Gap-Tallard
Balloon : Zodiac Z600 (600.000 m3 )
floating altitude : > 41 km (3.8 g/cm2 residual atmosphère), during 5h 30’
Landing : 14 june 2001, 17 h UT, Bergerac, Acquitane (~Bordeaux region)
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Institute for Crystal Growth – Berlin member of the
Monoisotopic Silicon Crystal Growth
-isotope enrichment as SiF4 gas
-Isotpes 28Si, 29Si, 30Si
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Institute for Crystal Growth – Berlin member of the
Special Demands for Mono Isotopic Si-
Crystals
Basically, mono isotopic silicon crystallizes in the same way as natural silicon.
Today, highly pure, perfect(dislocation-free) silicon crystals of 5-500kg weight are
grown.
In contrast, only very small amounts of mono isotopic silicon are available. Down
scaling of the silane purification, of the chemical vapor deposition(CVD ) and last but
not least of crystal growth methods causes new problems.
Therefor, qualified crystal growth techniques are needed in order to minimize material
lost and to exploit effectively impurity segregation for the final goal of growing pure,
perfect, mono isotopic Si crystals.
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Institute for Crystal Growth – Berlin member of the
Crucible-less Silicon Growth Techniques
• natural silicon seed
possible
• evaporation of impurities
• crystal diameter free
• no crucible contamination
• easy growth of thin filaments
from thick feed rod
• mechanically stable
• no crucible contamination
• cylindrical feed rod necessary
• weak segregation effect
• mechanically instable
• crystal thinner than feed
• cryst. diameter < 40mm
• weak segregation effect
Floating Zone(FZ) Pedestal
growth of mono isotopic
seeds and filaments for CVD
Growth of high purity, large
dislocation-free crystals
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Institute for Crystal Growth – Berlin member of the
29Si
SiC seed
- CZ-grown crystal
- isotopic enrichment: 96,8 at% 29Si
- 0.4 at% concentration loss of 29Si due to quartz crucible erosion
- weight of crucible charge 4.0 g granulate, crystal weight: 3,8 g
- total impurities < 7 ppm (preferably carbon and oxygen)
- electrical resistivity: 3-5 cm
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Institute for Crystal Growth – Berlin member of the
30Si
• mini CZ grown crystal
• isotopic enrichment: 99,5 at% 30Si
• crucible charge: 13.3 g
• crystal weight 12,0g
• carbon content 3*1017 cm-3
• resistivity: 1.5-2 cm, p-type
Twin boundaries due to
high carbon
concentration
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Institute for Crystal Growth – Berlin member of the
28Si
- 99,93 at% 28Si dislocation- free single cystal, <211>- orientation,
- mass of disl.-free part: 18g, (mass of CVD-poly Si rod:32.0 g)
- impurities :B - <3 1013 cm-3, C - < 3.0 1016 cm-3, O - 3.2 1016 cm-3
- electrical resistivity: 460 cm
diameter: 14mm
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Institute for Crystal Growth – Berlin member of the
23.05.2007:
Growth of the final 28Si isotope dislocation-free FZ-Si
crystal
Feed rod: 6 kg polycrystalline 28Si (99,994%), 65mmØ,850mm length, made in the Institute for High PuritySubstances (Nizhni Nowgorod, Ru) by CVD of Silan(28SiH4) synthesised from 28SiF4 enriched byCentrotech St. Petersburg
Physical purification at IKZ:11 Floating-Zone-runs (4 runs in vacuum)- carbon reduction <3·1014 cm-3
Final crystal(4,6kg) grown with diameter variationto enable two instead of only one 1kg-spheres (fig.right)
Remainig material will be used for basic researcheffords
AVOGADRO– the new natural kg-standard ?
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Institute for Crystal Growth – Berlin member of the
Dependence of the
phosphorus bound exciton
PLE line shapes on
temperature and isotopic
enrichment.
The spectrum labeled b is for a
sample enriched to 99.983% 28Si,
and the spectrum labeled c is for a
sample enriched to 99.92% 28Si,
both at 1.4 K.
Source: M.Thewalt
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Institute for Crystal Growth – Berlin member of the
Germanium crystal growth, GERDA activities
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Institute for Crystal Growth – Berlin member of the
Inductively heated Czochralski (CZ) technique
• Starting material of arbitrary shape
• Effective purification by segregation
• Down scaling possible (mini-CZ)
• Impurities from crucible (O,Al)
• Input of common silicon by
crucible erosion (ca.50 m/h)
• Common silicon from seed
if it is not mono isotopic
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Institute for Crystal Growth – Berlin member of the
0 10 20 30 40 50
0,1
1
10
C/C0
crystal length, a.u.
CZ, k0=0,35 (P)
FZ, k0=0,35 (P)
CZ, k0=0,07 (C)
FZ, k0=0,07 (C)
Impurity segregation for CZ and FZ growth
C - impurity concentration
Co- concentration in feed
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Institute for Crystal Growth – Berlin member of the
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Institute for Crystal Growth – Berlin member of the
Spule Silberrohr
Stütztiegel Mo, TZM
Spulenhalter Quarz
Tiegel Quarz
Gasführung Quarz
Keimstange TZM
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Institute for Crystal Growth – Berlin member of the
simulated global temperature field, Mo-susceptor (150 mm), T=50 K,
without convection – P 7,1 kW
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Institute for Crystal Growth – Berlin member of the
950°C
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Institute for Crystal Growth – Berlin member of the
Stömung
nach oben
Calculated with gas convection
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Institute for Crystal Growth – Berlin member of the
Crucible-less Growth Techniques
also for Germanium??
• natural silicon seed
possible
• evaporation of impurities
• crystal diameter free
• no crucible contamination
• easy growth of thin filaments
from thick feed rod
• mechanically stable
• no crucible contamination
• cylindrical feed rod necessary
• weak segregation effect
• mechanically instable
• crystal thinner than feed
• weak segregation effect
Floating Zone(FZ) Pedestal
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Institute for Crystal Growth – Berlin member of the
Thank You for Your Attention!